JP2003257850A - Device and method for treating substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device and method for treating substrate by which the widths of lines and thicknesses of resist films can be controlled more accurately by analyzing environments around substrates more minutely. <P>SOLUTION: In the method for treating substrate, a line width model CD 64 which uses 'the time (x) from exposure ending time to heat treatment (PEB) starting time', 'the standby time (y) of heat treatment equipment (PAB)', 'the temperature (z) in an applying and developing device', and 'the air pressure (w) in the applying and developing device', all of which have effects on the formation of a resist pattern, as parameters is experimentally produced. Then the developing time which is one of developing conditions is controlled by means of a developing time-line width model 28 based on the line width model CD 64. Consequently, the widths of lines which are not able to be controlled accurately by the exposure condition of an exposure system only can be predicted. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and a substrate processing method for forming a desired resist pattern on a semiconductor substrate in manufacturing a semiconductor device, particularly in a photolithography process.

[0002]

2. Description of the Related Art In a photolithography process in the manufacture of semiconductor devices, a resist film is formed on the surface of a semiconductor wafer (hereinafter referred to as "wafer"), which is then exposed to a predetermined pattern and further developed. As a result, a desired resist pattern is formed.

Conventionally, such a photolithography process includes a resist coating processing unit for rotating a wafer to apply a resist solution by centrifugal force, a developing processing unit for supplying a developing solution to a wafer and performing a developing process. It is carried out by the coating / developing apparatus and the exposure apparatus which is continuously provided integrally with the apparatus. In addition, such a coating and developing treatment apparatus, for example, after forming a resist film,
Alternatively, it has a heating processing unit and a cooling processing unit that perform thermal processing such as heating processing and cooling processing on the wafer before and after the development processing, and further, a transfer robot that transfers the wafer between these processing units. And so on.

By the way, in recent years, the miniaturization of the resist pattern has been further advanced, and for example, the line width of the resist pattern is required to be controlled more precisely. Further, since the resist film thickness has a great influence on the shape of the resist pattern, it is required to precisely control the resist film thickness. Such control of the line width of the resist pattern is performed by feedback control based on the exposure conditions in the exposure apparatus, such as the intensity of the exposure light and the focus value. Further, the control of the resist film thickness is performed by feedback control based on this rotation speed in consideration of the large influence of the wafer rotation speed in the resist coating processing unit.
(For example, refer to Patent Document 1).

[0005]

[Patent Document 1] Japanese Patent Laid-Open No. 2000-218219 (paragraph [0058] etc.).

[0006]

However, the line width of the resist pattern depends on the environment around the wafer in the coating and developing treatment apparatus, for example, the transfer time until it is loaded into each processing unit, the temperature or humidity in the apparatus, Alternatively, since it is also affected by the flow of airflow in the apparatus, it becomes difficult to control the line width, which tends to be miniaturized, to a constant value even if the intensity of the exposure light or the focus value is changed as described above. is there. Similarly, regarding the resist film thickness, the transfer time and temperature / humidity outside the resist coating processing unit,
Precise control is becoming difficult due to the adverse effects of the environment around the wafer.

In view of the above circumstances, an object of the present invention is to analyze the environment around these substrates in more detail, and to perform more precise line width control and resist film thickness control, and a substrate. It is to provide a processing method.

[0008]

In order to achieve the above object, the substrate processing apparatus according to the first aspect of the present invention forms a resist film on at least a substrate and performs a developing process to obtain a desired resist pattern. In the substrate processing apparatus for forming a, a means for storing a functional model created based on a plurality of parameters involved in forming the resist pattern, and based on the functional model, among the resist film forming conditions and the development processing conditions Means for controlling at least one.

In the present invention, a plurality of environmental conditions around the substrate that affect the formation of a resist pattern are extracted, a function model is created using these as parameters, and a resist film is formed based on this function model. At least one of the condition and the development processing condition is controlled. Thus, for example, the feedforward control can be performed by predicting the line width of the resist pattern, which cannot be precisely controlled only by the exposure condition in the exposure apparatus, by the function model. Further, when the resist solution is applied by rotating the substrate when forming the resist film, by predicting the resist film thickness that cannot be precisely controlled only by monitoring the number of rotations of the substrate by the above function model, Feedforward control is possible. As a result, the line width of the pattern and the resist film thickness can be controlled more precisely in response to the demand for pattern miniaturization. Furthermore, for example, if the above environmental conditions are constantly monitored, it is possible to predict the line width and the film thickness using the function model from the monitored information, so the control response is speeded up,
Product defects can be reduced as much as possible.

Here, the resist pattern is a concept that includes not only the line width but also the pitch of the pattern line, the sidewall (angle of the side surface with respect to the substrate surface), and the aspect ratio.

According to one aspect of the present invention, the control means controls the development time of the development processing conditions. In this way, by controlling the development time which is considered to have the greatest effect on the fluctuation of the line width among the development processing conditions, the line width can be controlled easily and precisely.

According to an aspect of the present invention, the resist film is formed by rotating the substrate, and the control means sets the substrate in the resist film forming conditions. Control the rotation speed of. As described above, among the resist film forming conditions, the line width can be controlled quickly and precisely by controlling the number of rotations of the substrate which is considered to most affect the fluctuation of the resist film thickness.

According to one aspect of the present invention, the functional model is created for each type of the resist. For example, since the function model can be created according to the difference in the resist concentration or viscosity, the resist film forming condition and the developing treatment condition can be controlled according to the resist type.

A substrate processing apparatus according to a second aspect of the present invention forms a resist film on a substrate, transfers the substrate to an exposure apparatus, and performs a first thermal processing on the substrate received from the exposure apparatus. Means for storing a function model created based on a plurality of parameters involved in forming the resist pattern in a substrate processing apparatus for forming a desired resist pattern by performing post-development processing, and the function model. And a means for controlling at least one of the resist film forming condition, the developing treatment condition and the first thermal treatment condition.

According to the present invention, a plurality of environmental conditions around the substrate that affect the formation of a resist pattern are extracted, a function model is created using these as parameters, and a resist film is formed based on this function model. At least one of the conditions, the development processing conditions, and the first thermal processing conditions is controlled. Thus, for example, the feedforward control can be performed by predicting the line width of the resist pattern, which cannot be precisely controlled only by the exposure condition in the exposure apparatus, by the function model. Further, when the resist solution is applied by rotating the substrate when forming the resist film, by predicting the resist film thickness that cannot be precisely controlled only by monitoring the number of rotations of the substrate by the above function model, Feedforward control is possible. As a result, the line width of the pattern and the resist film thickness can be controlled more precisely in response to the demand for pattern miniaturization.

According to one aspect of the present invention, the method further comprises means for performing a second thermal treatment after the resist film is formed, and the functional model relates to a line width of the resist pattern, and at least: The time from the end of the exposure processing to the start of the first thermal processing, the standby time of the substrate after the second thermal processing, the temperature inside the substrate processing apparatus, and the inside of the substrate processing apparatus. The atmospheric pressure is used as the parameter. Among these parameters, the line width and the resist film thickness of the resist pattern have a great effect on the fluctuation of the line width. Therefore, by creating a function model using these parameters as parameters, The line width can be precisely controlled by controlling the processing conditions and the like.

Of these parameters, "the time from the end of the exposure processing to the start of the first thermal processing" and "the waiting time of the substrate after the second thermal processing" are , And is a parameter of “time”. For example, when there are a plurality of processing units in the substrate processing apparatus for single wafer processing, the parameter of “time” is different for each substrate. It is preferable to control the line width for each substrate.

According to one aspect of the present invention, the control means controls the development time of the development processing conditions. It has been known that the relationship between the developing time and the line width is almost inversely proportional, and by controlling this, the line width can be easily and precisely controlled.

According to one aspect of the present invention, the control means further controls either the concentration of the developing solution used in the developing process or the temperature of the developing solution in the developing process conditions.
Thus, in addition to the development time, the temperature of the first thermal treatment,
By controlling either the time or the temperature raising / lowering rate, it is possible to manage the line width with higher accuracy.

According to an aspect of the present invention, the control means includes at least the first thermal treatment condition among the first thermal treatment conditions.
Either the temperature, the time, or the temperature rising / falling rate of the thermal treatment of is controlled. From this, for example, when the first thermal treatment is a heat treatment, it is known that the relation between the heat treatment temperature and the line width is almost in inverse proportion to each other. And the line width can be controlled precisely.

According to an aspect of the present invention, the resist film is formed by rotating the substrate in a container, and the functional model relates to the resist film thickness. At least, the atmospheric pressure at the time of forming the resist film, the temperature of the container, and the humidity are used as the parameters. Since these parameters have a great influence on the fluctuation of the resist film thickness among the line width and resist film thickness of the resist pattern, by creating a function model using these parameters as described above, The resist film thickness can be precisely controlled by controlling each processing condition and the like.

According to one aspect of the present invention, the control means controls the rotation speed of the substrate among the resist film forming conditions. It is known that there is a correlation between the substrate rotation speed and the resist film thickness, and by controlling this,
The resist film thickness can be controlled easily and precisely.

According to one aspect of the present invention, the control means further controls either the temperature of the resist or the discharge speed of the resist. Thus, in addition to the substrate rotation speed, either the resist temperature or the resist discharge speed can be controlled to manage the line width with higher accuracy.

According to one aspect of the present invention, the apparatus further comprises means for performing a second thermal treatment after the resist film is formed, and the control means has at least the second thermal treatment condition among the second thermal treatment conditions. Any of the temperature, the time, and the temperature rising / falling rate of the thermal treatment of 2 are controlled. Since these conditions also affect the fluctuation of the resist film thickness, it is possible to manage the line width with higher accuracy.

According to one aspect of the present invention, a resist film forming portion for forming the resist film, a heat treatment portion for performing the first and second thermal treatments, and a developing treatment portion for performing the developing treatment. And a transfer mechanism that transfers and receives the substrate among at least the resist film forming unit, the heat treatment unit, and the development processing unit, and the function model further uses the transfer time of the substrate by the transfer mechanism as a parameter. Since it is considered that one of the factors that affects the fluctuation of the line width and the resist film thickness between the resist film forming section, the heat treatment section and the development processing section by the transfer mechanism is one of the factors that influence the fluctuation, the transfer time is also a parameter. Create a functional model. As a result, it is possible to precisely control the line width and the like by controlling the processing conditions and the like as described above.

A substrate processing apparatus according to a third aspect of the present invention is a substrate processing apparatus for forming a desired resist film by performing a thermal treatment after forming a resist film on a substrate. The present invention comprises: a means for storing a functional model created based on a plurality of parameters involved in forming; and a means for controlling at least one of a resist film forming condition and a thermal processing condition based on the functional model. .

In the present invention, a plurality of environmental conditions around the substrate that affect the formation of a desired resist film are extracted, a function model is created using these as parameters, and the resist film of the resist film is formed based on this function model. At least one of formation conditions and thermal treatment conditions is controlled. Thus, when the resist solution is applied by rotating the substrate when forming the resist film, the resist film thickness that cannot be precisely controlled only by monitoring the number of rotations of the substrate,
Feedforward control becomes possible by predicting with the above-mentioned functional model. As a result, the line width of the pattern and the resist film thickness can be controlled more precisely in response to the demand for pattern miniaturization. Here, the functional model is one in which the formation of the resist film forms the resist film by rotating the substrate in a container, and at least:
Atmospheric pressure during resist film formation, the temperature of the container,
Humidity is used as the parameter.

In one embodiment of the present invention, the control means further comprises a film thickness inspecting means for inspecting a resist film thickness formed under the resist film forming conditions controlled by the control means, and the control means comprises: A resist film forming condition correcting unit is provided for correcting the resist film forming condition based on the resist film thickness inspected by the inspection unit. For example, if only feedforward control is performed, the predicted value may be inaccurate due to the fluctuation of the film thickness due to the influence of the parameters not actually monitored among the plurality of parameters involved in the formation of the resist film. On the other hand, in the present invention, by performing a film thickness inspection and adaptively correcting the resist film forming condition, that is, by adding feedback control, the film thickness can be controlled with high accuracy and a desired resist film can be obtained. Can be formed.

In one embodiment of the present invention, for example, when the resist film is formed by spin coating, the resist film forming condition correction means may correct the rotational speed of the substrate.

According to one aspect of the present invention, there is further provided pattern inspection means for inspecting a resist pattern formed under the development processing conditions controlled by the control means, and the control means is inspected by the pattern inspection means. Further, a development processing condition correction means for correcting the development processing condition based on the resist pattern is provided. For example, with only the feedforward control, there is a case where, for example, the line width varies due to the influence of a parameter that is not actually monitored among the above-mentioned plurality of parameters involved in the formation of the resist pattern, and the predicted value becomes inaccurate. On the other hand, in the present invention, by inspecting the resist pattern and adaptively correcting the development processing conditions, it is possible to control the line width with high accuracy and form a desired resist pattern.

In one embodiment of the present invention, for example, the developing process condition correcting means may correct the developing time.

A substrate processing apparatus according to a fourth aspect of the present invention forms a resist film on at least a substrate, transfers the substrate on which the resist film is formed to an exposure device, and receives the exposed substrate to perform a developing process. By performing the method, in a substrate processing apparatus for forming a desired resist pattern, a means for storing a function model created based on a plurality of parameters involved in forming the resist pattern, and a resist film based on the function model. And a means for controlling at least one of the forming condition, the developing process condition and the exposing process condition.

In the present invention, a plurality of environmental conditions around the substrate that affect the formation of a resist pattern are extracted, a function model is created using these as parameters, and a resist film is formed based on this function model. At least one of the conditions, the development processing conditions, and the exposure processing conditions is controlled. As described above, in the present invention, since the exposure processing conditions are controlled in addition to the control of the resist film forming conditions and the development processing conditions, the line width of the pattern and the resist film thickness can be controlled more precisely.

In one embodiment of the present invention, the control means is
The development time is controlled among the development processing conditions.

In one embodiment of the present invention, the resist film is formed by rotating the substrate, and the control means controls the rotation of the substrate among the resist film forming conditions. Control the number.

In one embodiment of the present invention, the control means is
The exposure amount of the exposure processing conditions is controlled. Since it has been known that the relationship between the exposure amount and the line width is almost proportional, the line width can be easily and precisely controlled by controlling this.

In one embodiment of the present invention, the control means further comprises a film thickness inspecting means for inspecting a resist film thickness formed under the resist film forming condition controlled by the control means, and the control means comprises: A resist film forming condition correcting unit is provided for correcting the resist film forming condition based on the resist film thickness inspected by the inspection unit. For example, in one aspect of the present invention, the resist film is formed by rotating the substrate, and the resist film forming condition correction means corrects the rotation speed of the substrate.

According to one aspect of the present invention, there is further provided pattern inspection means for inspecting the resist pattern formed under the development processing conditions controlled by the control means, and the control means is inspected by the pattern inspection means. Further, a development processing condition correction means for correcting the development processing condition based on the resist pattern is provided. For example, the development processing condition correction means corrects the development time.

According to one aspect of the present invention, there is further provided pattern inspection means for inspecting a resist pattern formed under the exposure processing conditions controlled by the control means, and the control means is inspected by the pattern inspection means. And an exposure processing condition correcting means for correcting the exposure processing condition based on the resist pattern. For example, with only the feedforward control, there is a case where, for example, the line width varies due to the influence of a parameter that is not actually monitored among the above-mentioned plurality of parameters involved in the formation of the resist pattern, and the predicted value becomes inaccurate. On the other hand, in the present invention, by inspecting the resist pattern and adaptively correcting the exposure processing condition, it is possible to control the line width with high accuracy and form a desired resist pattern.
As one form of the present invention, for example, the exposure processing condition correction means corrects the exposure amount.

In the substrate processing method according to the first aspect of the present invention, the resist pattern is formed in the substrate processing method of forming a desired resist pattern by forming a resist film on a substrate and performing development processing. The method includes a step of creating a functional model based on a plurality of parameters involved in the process, and a step of controlling at least one of a resist film forming condition and a development processing condition based on the functional model.

A substrate processing method according to a second aspect of the present invention forms a resist film on at least a substrate, transfers the substrate on which the resist film is formed to an exposure device, and receives the exposed substrate to perform a development process. In the substrate processing method for forming a desired resist pattern by performing,
(A) a step of creating a function model created based on a plurality of parameters involved in forming the resist pattern; and (b) a resist film forming condition, a development processing condition and an exposure processing condition based on the function model. Controlling at least one of the above.

[0042]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

1 to 3 are views showing the overall construction of a coating and developing treatment apparatus according to an embodiment of the present invention. FIG. 1 is a plan view, and FIGS. 2 and 3 are front and rear views. .

In the coating and developing treatment apparatus 1, a plurality of semiconductor wafers W as substrates to be treated are transferred into or out of the apparatus 1 from the outside in units of a plurality of wafer cassettes CR, for example, 25 wafers. Cassette station 10 for loading and unloading wafers W
Further, a processing station 12 in which various single-wafer processing units that perform a predetermined process on the wafer W one by one in the coating and developing process are arranged in multiple stages at predetermined positions, and is provided adjacent to the processing station 12. The interface unit 14 for transferring the wafer W to and from the exposure apparatus 100 is integrally connected.

In the cassette station 10, as shown in FIG. 1, a plurality of wafer cassettes CR, for example, five wafer cassettes CR are located at the positions of the protrusions 20a on the cassette mounting table 20, with their respective wafer entrances / outlets facing the processing station 12 side in the X direction. The wafer carriers 22 placed in a row and movable in the cassette arrangement direction (X direction) and in the wafer arrangement direction (Z direction) of the wafers stored in the wafer cassette CR selectively access each wafer cassette CR. It is like this.
Further, the wafer carrier 22 is configured to be rotatable in the θ direction so that it can also access a heat treatment system unit belonging to the third processing unit section G3 having a multi-stage configuration described later as shown in FIG. It has become.

As shown in FIG. 1, the processing station 12
The third processing unit section G3, the fourth processing unit section G4, and the fifth processing unit section G5 are arranged from the cassette station 10 side on the rear side of the apparatus (upper side in the drawing). Unit part G3 and 4th
The first main wafer transfer apparatus A1 according to the embodiment is provided between the processing unit section G4 and the processing unit section G4. This first
The main wafer transfer device A1 of the
The main wafer carrier 16 of the first processing unit section G1, the third processing unit section G3, and the fourth processing unit section G4
Etc. are installed so that they can be selectively accessed. Further, a second main wafer transfer apparatus A2 is provided between the fourth processing unit section G4 and the fifth processing unit section G5, and the second main wafer transfer apparatus A2 is the same as the first main wafer transfer apparatus A2. The second main wafer carrier 17 is connected to the second processing unit section G2,
Fourth processing unit section G4 and fifth processing unit section G
It is installed to allow selective access to 5th grade.

Further, a heat treatment unit is installed on the back side of the first main wafer transfer device A1 and, for example, an adhesion unit (A) for hydrophobicizing the wafer W.
D) 110, a heating unit (HP) for heating the wafer W
As shown in FIG. 3, 113 is superposed in two stages in order from the bottom. The adhesion unit (AD) may be configured to further have a mechanism for controlling the temperature of the wafer W.
On the back side of the second main wafer transfer device A2, there is a peripheral exposure device (WE) that selectively exposes only the edge portion of the wafer W.
E) 120, a film thickness inspection device 119 for inspecting the resist film thickness applied to the wafer W, and a line width inspection device 118 for inspecting the line width of the resist pattern are provided in multiple stages.
The film thickness inspection device 119 and the line width inspection device 118 are
As described above, the coating and developing treatment apparatus 1 may not be provided inside the apparatus but may be provided outside the apparatus. Further, a heat treatment unit (HP) 113 may be arranged on the back side of the second main wafer transfer apparatus A2 as in the back side of the first main wafer transfer apparatus A1.

As shown in FIG. 3, in the third processing unit section G3, an oven type processing unit for carrying out a predetermined processing by placing the wafer W on a mounting table, for example, a high temperature for performing a predetermined heating processing on the wafer W A heating processing unit (BAKE), a cooling processing unit (CPL) for performing cooling processing on the wafer W with accurate temperature control, and a transition unit (transfer unit for transferring the wafer W from the wafer carrier 22 to the main wafer carrier 16). TRS), and a transfer / cooling processing unit (TCP), which is separately arranged in the upper and lower two stages of the transfer part and the cooling part, is stacked in order from the top, for example, in ten stages. In the third processing unit section G3,
In this embodiment, the third stage from the bottom is provided as a spare space. Also in the fourth processing unit section G4, for example, a post-baking unit (POST), a transition unit (TRS) that serves as a wafer transfer section, and a pre-baking unit that heats the wafer W after resist film formation as the second thermal processing. Similarly, (PAB) and cooling treatment units (CPL) as the second thermal treatment are stacked in, for example, 10 stages from the top. Further, in the fifth processing unit section G5, for example, a post-exposure baking unit (PEB) for heating the exposed wafer W as the first thermal processing, and a cooling processing as the first thermal processing. A unit (CPL) and a transition unit (TRS) that serves as a transfer portion for the wafer W are stacked in, for example, 10 stages from the top.

In FIG. 1, a first processing unit section G1 and a second processing unit section G2 are arranged side by side in the Y direction on the front side (lower side in the figure) of the processing station 12. Used between the first processing unit section G1 and the cassette station 10 and between the second processing unit section G2 and the interface section 14 for temperature control of the processing liquid supplied by each processing unit section G1 and G2. Liquid temperature control pumps 24 and 25 are provided respectively, and further, clean air from an air conditioner (not shown) provided outside the coating and developing treatment apparatus 1 is supplied into each of the processing unit sections G1 to G5. Ducts 31 and 32 are provided.

As shown in FIG. 2, in the first processing unit section G1, five spinner type processing units for placing the wafer W on the spin chuck in the cup CP and performing a predetermined process,
For example, a resist coating unit (COT) as a resist film forming unit has three stages, and a bottom coating unit (BARC) for forming an antireflection film to prevent reflection of light at the time of exposure has two stages. It is stacked in columns. Similarly, in the second processing unit section G2, 5
A spinner type processing unit, for example, a development processing unit (DEV) as a development processing unit is stacked in five stages.
In the resist coating processing unit (COT), draining of the resist solution is troublesome both mechanically and in terms of maintenance. Therefore, it is preferable to arrange the resist solution in the lower stage. However, it is also possible to arrange them in the upper stage if necessary.

Also, the first and second processing unit sections G1
At the bottom of G2 and G2, there are processing unit sections G1 and G2.
The chemical chamber (CH
M) 26 and 27 are provided respectively.

Further, the processing station 12 is provided with, for example, four temperature / atmospheric pressure sensors Sa, Sb, Sc, Sd for measuring the temperature and atmospheric pressure inside the processing station 12. These four temperature / pressure sensors Sa, Sb,
By taking, for example, the average value of the measurement results of Sc and Sd, it is possible to manage the temperature and atmospheric pressure with higher accuracy.

A portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages on the front surface of the interface section 14, and the wafer carrier 2 is arranged in the central portion.
7 is provided. This wafer carrier 27 is composed of X, Z
By moving in the direction, both cassettes CR and BR can be accessed. Further, the wafer carrier 27 is configured to be rotatable in the θ direction so that it can also access the fifth processing unit section G5. Further, as shown in FIG. 3, a plurality of high-precision cooling processing units (CPL) are provided on the back surface of the interface section 14, for example, two upper and lower stages. The wafer transfer body 27 can also access this cooling processing unit (CPL).

FIG. 4 is a perspective view showing a first main wafer transfer device A1 according to an embodiment of the present invention. Since the second main wafer transfer device A2 is the same as the first main wafer transfer device A1, its description is omitted.

As shown in FIG. 1, the main wafer transfer device A1
Is surrounded by the housing 41 to prevent particles from entering. The housing 41 is not shown in FIG. 4 for the sake of clarity.

As shown in FIG. 4, poles 33 are vertically provided at both ends of the main wafer transfer device A1, and the main wafer transfer body 16 (17) extends vertically (Z direction) along the poles 33. It is arranged to be movable. The wafer W is held on the carrier base 55 of the main wafer carrier 16 3
Two tweezers 7a to 7c are provided, and these tweezers 7a to 7c are configured to be movable in the horizontal direction by a drive mechanism (not shown) built in the transport base 55. Below the transport base 55, a support member 45 that supports the transport base 55 is provided with a rotating member 46 that is rotatable in the θ direction.
Connected through. As a result, the wafer carrier 1
6 is rotatable in the θ direction. A flange portion 45a is formed on the support body 45, and the flange portion 45a is slidably engaged with a groove 33a provided in the pole 33, and is slidable by a belt drive mechanism incorporated in the pole 33. It is provided. As a result, the main wafer carrier 16 can move vertically along the pole 33.

At the bottom of the main wafer transfer device A1,
For example, four fans 36 for controlling the atmospheric pressure and temperature / humidity inside the transport device A1 are provided.

FIG. 5 shows the flow of clean air in the coating and developing treatment apparatus 1. In FIG. 5, air supply chambers 10a, 12a, 14 are provided above the cassette station 10, the processing station 12, and the interface unit 14.
a is provided, and the air supply chambers 10a, 12a, 14 are provided.
Filters with a dustproof function, for example, ULPA filters 101, 102, 103 are attached to the lower surface of a. Clean air is supplied from the ULPA filters 101, 102, and 103 of each air supply chamber to each unit 10, 12, and 14 by downflow, and is supplied from these air supply chambers to the processing unit by downflow. The downflow air is supplied from the ducts 31 and 32 described above in the arrow direction (upward).

Further, the liquid supply system unit (G1, G2)
In each of the respective units, a fan / filter unit F is attached above them, and an atmospheric pressure sensor S1 for measuring the atmospheric pressure is provided.
The fan / filter unit F has, for example, a ULPA filter and a small fan (not shown). On the other hand, each unit in the third to fifth processing unit sections G3 to G5, and the first and second main wafer transfer devices A1 and A2 are also provided with similar sensors (not shown).

FIG. 6 and FIG. 7 are a plan view and a sectional view showing a resist coating unit (COT) as a resist film forming portion according to an embodiment of the present invention.

In this unit, as described above, the housing 4
A fan / filter unit F is attached above 1 ', and an annular cup C is provided near the center of a unit bottom plate 151 below the width of the casing 41' in the Y direction.
P is arranged, and the spin chuck 142 is arranged inside thereof. The spin chuck 142 holds the wafer W fixed by vacuum suction, and drives the drive motor 143.
It is configured to rotate by the rotational driving force of. The rotation speed of the drive motor 143 is controlled by the rotation speed controller 34.

A pin 148 for transferring the wafer W is provided in the cup CP so that it can be moved up and down by a driving device 147. As a result, the wafer can be delivered to and from the tweezers 7a through the opening 41'a while the shutter 43 that can be opened and closed is open. A drain port 14 for waste liquid is provided on the bottom of the cup CP.
5 are provided. The drain pipe 1 is connected to the drain port 145.
41 is connected, and the waste liquid pipe 141 is connected to the unit bottom plate 15
The space N between 1 and the housing 41 'is used to communicate with a waste liquid outlet (not shown) below.

As shown in FIG. 6, the nozzle 135 for supplying the resist to the surface of the wafer W has a liquid supply mechanism (not shown) in the chemical chamber (CHM) 26 (FIG. 2) via the supply pipe 134. )It is connected to the. The nozzle 135 is detachably attached to the tip of the nozzle scan arm 136 by a nozzle standby portion 146 arranged outside the cup CP, and is transferred to a predetermined resist discharge position set above the spin chuck 142. It is like this. The nozzle scan arm 136 is attached to the upper end of a vertical support member 149 that is horizontally movable on a guide rail 144 that is laid in one direction (Y direction) on the unit bottom plate 151, and a Y-direction drive mechanism (not shown). By this, it moves in the Y direction integrally with the vertical support member 149.

The nozzle scan arm 136 is also movable in the X direction perpendicular to the Y direction in order to selectively attach the nozzle 135 in the nozzle standby portion 146 according to the type of resist, and is driven by an X direction drive mechanism (not shown). It also moves in the X direction. Here, the types of resists differ depending on, for example, the concentration and viscosity of the resist.

Further, a drain cup 138 is provided between the cup CP and the nozzle standby portion 146, and the nozzle 135 is cleaned at this position before the resist is supplied to the wafer W.

On the guide rail 144, a vertical support member 149 that supports the nozzle scan arm 136 described above.
In addition, a vertical support member that supports the rinse nozzle scan arm 139 and is movable in the Y direction is also provided.
A rinse nozzle 140 for side rinse is attached to the tip of the rinse nozzle scan arm 139.
The rinse nozzle scan arm 139 and the rinse nozzle 140 are connected to the cup C by a Y-direction drive mechanism (not shown).
It moves between the nozzle standby position set to the side of P and the rinse liquid discharge position set right above the peripheral edge of the wafer W placed on the spin chuck 142.

This resist coating processing unit (COT)
As described above, the atmospheric pressure sensor S1 for measuring the atmospheric pressure p [hPa] is provided therein, and the temperature q of the cup is
A cup temperature sensor S2 for measuring [° C.] and a humidity sensor S3 for measuring the humidity r [%] in the unit are provided.
(See Figure 15).

FIG. 8 is a sectional view showing a development processing unit (DEV) according to one embodiment of the present invention. Since this developing processing unit (DEV) has a similar configuration to the resist coating processing unit (COT), the same components as those in the resist coating processing unit (COT) are the same in FIG. The reference numerals will be given and the description thereof will be omitted.

The nozzle 153 for supplying the developing solution to the surface of the wafer W has substantially the same length as the diameter of the wafer W, and a plurality of holes for ejecting the developing solution (not shown) are formed. Alternatively, a nozzle having a slit-shaped discharge port may be used. A rinse nozzle (not shown) is also provided so as to be movable on the wafer W.

FIGS. 9 and 10 are plan and cross-sectional views of a pre-baking unit (PAB) and a post-exposure baking unit (PEB) for thermally treating a wafer W according to an embodiment of the present invention. is there. Each of these baking units only differs in processing temperature.

As shown in FIG. 9, these units are surrounded by a casing 75, and the wafer W is placed on the back side in the processing chamber 30 under the control of the temperature controller 132, for example, 100. A heating plate 86 for performing a heat treatment at a temperature of around 0 ° C. is provided, and a temperature control plate 71 for mounting the wafer W and controlling the temperature is provided on the front side. The heating plate 86 is supported by a support 88, and the support 8
Elevating pins 85 for supporting the wafer W from below 8
Are provided so that they can be moved up and down by a lifting cylinder 82.
Further, the heating plate 8 is provided above the heating plate 86 during the heat treatment.
A cover member (not shown) that covers 6 is arranged.

As a temperature adjusting mechanism of the temperature adjusting plate 71, for example, cooling water, a Peltier element, or the like is used to adjust the temperature of the wafer W to a predetermined temperature, for example, about 40 ° C. to perform temperature control. There is. This temperature control plate 71
Has a notch 71a as shown in FIG.
Lifting pin 8 buried under the temperature control plate 71
4 can be retracted from the surface of the temperature control plate by the lifting cylinder 81. Further, the temperature adjusting plate 71 can be moved along the rail 77 by, for example, a motor 79a, so that the wafer can be transferred to the heating plate 86 while the temperature of the wafer is adjusted. Has become.

The prebaking unit (PA
B), post-exposure baking unit (P
EB) has an air flow path 75 for controlling the atmospheric pressure.
c is formed, and the air from the flow path 75c is made to flow into the processing chamber 30 via the fan 87a. Further, the air inside the processing chamber 30 is exhausted from the exhaust port 75d by the fans 87b provided on both wall surfaces.

Further, for example, a fourth processing unit section G4 is provided on one side surface portion of the temperature control plate side 71 of the casing 75.
With regard to the above, an opening 75a is provided in order to transfer the wafer W to and from the first main wafer transfer device A1, and the other side surface part of the second main wafer transfer device A2 side is provided. An opening 75b is provided so as to face the opening. A shutter 76 that can be opened and closed by a drive unit (not shown) is provided in each of the openings 75a and 75b.
a and 76b are provided.

Although not shown, the cooling processing unit (CPL) has, for example, a cooling plate on which a wafer W is placed and which is subjected to cooling processing at about 23 ° C. for each heat-treated wafer. A Peltier element or the like is used as the cooling mechanism.

FIG. 11 is a block diagram showing a control system for controlling the coating and developing treatment apparatus 1. In the coating and developing treatment apparatus 1,
The resist coating processing unit (COT), development processing unit (DEV), pre-baking unit (PA) described above.
B), post-exposure baking unit (P
EB) and the sensors Sa to Sd are connected to the bus 5. Although not shown, the post baking unit (P
All other units such as the OST) and the cooling processing unit (CPL) are similarly connected to the bus 5.

A control unit 35 is connected to the bus 5. The control unit 35 has, for example, each sensor measurement data storage unit 6.
1, wafer data storage unit 62, process recipe data storage unit 63, line width model storage unit 64, film thickness model storage unit 6
5, a development time-line width model storage unit 28, and a rotation speed-film thickness model storage unit 29 are connected to each other.

Each sensor measurement data storage unit 61 has a sensor S in the resist coating processing unit (COT).
1 to S3 and the measurement results by the sensors Sa to Sd are stored. The wafer data storage unit 62 stores, for example, an identifier given to each wafer, which unit is in the coating and developing treatment apparatus 1, and what kind of treatment is performed and how long. It is stored for each wafer whether it has been performed. This identifier can be attached, for example, in the order of wafers stored in the wafer cassette CR in multiple stages, for example, from the top in the cassette CR. The process recipe data storage unit 63 stores the processing process requested by the host. The line width model storage unit 64 stores a plurality of data collected in order to obtain the line width of a desired resist pattern as a mathematical expression. Film thickness model storage unit 65
Similarly, a plurality of data collected in order to obtain a desired resist film thickness are stored as mathematical expressions. The development time-line width model storage unit 28 stores the correlation between the development time and the line width of the pattern, for example, as a mathematical expression. Similarly, the rotation speed-film thickness model storage unit 29 also stores the correlation between the rotation speed of the wafer and the resist film thickness when the resist film is formed, for example, as a mathematical expression.

Next, a series of processing steps of the coating and developing processing apparatus 1 described above will be described with reference to the flow shown in FIG.

First, in the cassette station 10, the wafer carrier 22 accesses the cassette CR which contains the unprocessed wafer W on the cassette mounting table 20, and takes out one wafer W from the cassette CR.
Then, the wafer W is transferred to the first main transfer device A1 via the transfer / cooling processing unit (TCP) and transferred to the bottom coating unit (BARC). Then, here, an antireflection film is formed to prevent reflection of exposure light from the wafer during exposure (step 1). Next, the wafer W is transferred to the baking processing unit in the third processing unit section G3 and subjected to a predetermined heat treatment at, for example, 120 ° C. (step 2),
After a predetermined cooling process is performed in the cooling process unit (CPL) (step 3), a desired resist film is formed on the wafer W in the resist coating process unit (COT) (step 4).

This resist coating unit (COT)
Then, when the wafer W is conveyed to a position directly above the cup CP, first, the pin 148 moves up to receive the wafer W and then moves down, and the wafer W is placed on the spin chuck 142 and vacuum sucked. It Then, the nozzle 135 waiting in the nozzle waiting portion moves to above the center position of the wafer W. Then, after the predetermined resist solution is discharged to the center of the wafer W, the drive motor 143 causes, for example, 10
The coating of the resist film is completed by rotating at 0 rpm to 4000 rpm and diffusing the resist liquid over the entire surface of the wafer W by the centrifugal force.

There is a correlation between the number of revolutions of the wafer W and the resist film thickness at the time of forming the resist film, and for example, as shown in FIG. 16, the film thickness becomes smaller as the number of revolutions increases. .

When the resist film is formed, the wafer W is moved to the pre-baking unit (P) by the first main carrier A1.
It is transported to AB). Here, first, the wafer W is placed on the temperature control plate 71 shown in FIG. 9, and the wafer W is moved to the heating plate 86 side while the temperature is controlled. Then, the wafer W is placed on the heating plate 86, and a predetermined heat treatment is performed at about 100 ° C., for example. When this heat treatment is completed, the temperature control plate 71 again accesses the heating plate 86 side to access the wafer W.
Are transferred to the temperature control plate 71, the temperature control plate 71 moves to the original position as shown in FIG. 9, and the wafer W waits until it is taken out by the first main carrier A1 (step 5). The waiting time y [seconds] in the prebaking unit (PAB) is the time from the end of the heating process by the heating plate 86 to the removal by the first main transfer device A1. Since the waiting time y has a different value for each wafer W under the single-wafer processing of the coating and developing treatment apparatus 1 according to the present embodiment, the wafer data storage unit 62 is provided for each wafer with an identifier. Are sequentially stored in.

Next, the wafer W is cooled by the cooling processing unit (CP
L) is cooled at a predetermined temperature (step 6). After that, the wafer W may be taken out by the second main transfer device A2 and transferred to the film thickness inspection device 119 to measure a predetermined resist film thickness. Then, the wafer W is transferred to the exposure apparatus 100 via the transition unit (TRS) in the fifth processing unit section G5 and the interface section 14 and is subjected to the exposure processing there (step 7).

Next, the wafer W has the interface section 14
Further, after being transferred to the second main transfer device A2 via the transition unit (TRS) in the fifth processing unit section G5, it is transferred to the post-exposure baking unit (PEB). After the exposure process, the wafer W
May be temporarily stored in the buffer cassette BR at the interface unit 14.

In the post-exposure baking unit (PEB), the pre-baking unit (PA
Predetermined heating processing and temperature control processing are performed by the same operation as that in B) (step 8). Here, the time from the end of the exposure process to the loading into the post-exposure baking unit (PEB) and the start of the heating process is x [seconds]. Since the time x has a different value for each wafer W under the single-wafer processing of the coating and developing treatment apparatus 1 according to the present embodiment, it is stored in the wafer data storage unit 62 for each wafer to which an identifier is attached. Sequentially stored.

Next, the wafer W is processed by the development processing unit (DE
V) and the developing process is performed (step 9). In this development processing unit (DEV), the wafer W is cup C
When it is conveyed to the position directly above P, first, the pin 148
Rises to receive the wafer W, and then descends to receive the wafer W.
Is placed on the spin chuck 142 and vacuum-adsorbed. Then, the nozzle 135 waiting in the nozzle waiting portion moves to above the peripheral position of the wafer W. Then, the drive motor 143 moves the wafer W to, for example, 10 rpm to 100 rpm.
While rotating at rpm, and while the nozzle 135 moves from the periphery of the wafer W in the Y direction, a predetermined developing solution is applied by the centrifugal force of rotation and left for a predetermined time to proceed with the developing process. There is a correlation between the developing time t and the line width in this developing process, and for example, as shown in FIG. 14, the line width becomes smaller as the developing time becomes longer. After that, a rinse liquid is supplied onto the wafer to wash away the developer, and the wafer is rotated to shake off and dry.

Next, the wafer W is taken out by the second main transfer device A2, and the transition unit (TRS) in the fourth processing unit section G4 and the first main transfer device A2.
The wafer is returned to the wafer cassette CR in the cassette station 10 through the first and third transition unit (TRS) units and the wafer carrier 22.

After the developing process, a predetermined heating process may be performed by a post baking unit (POST). After the development processing, the line width inspection device 118 may inspect the line width.

FIG. 13 shows the data stored in the line width model storage unit 64 shown in FIG. This line width model is based on the above times x and y, the temperature z [° C.] in the coating and developing treatment apparatus and the atmospheric pressure w [hPa] in the coating and developing treatment apparatus (the temperature z and the atmospheric pressure w are as described above. 1) is used to obtain the line width model CD [nm] = ax + by + cz + dw + h (a, b, c, d, and h are constants), and, for example, the line width model CD [nm] = 0.02x + 0.03y + 0,
It can be represented by a model formula of 54z + 0.65w-466.608. This model formula is created by experiment.

The line width actually formed by such a model formula is obtained. That is, by this model formula,
Before the wafer development processing, the line width after the development processing can be predicted. The relationship between the developing time t and the line width has been previously obtained by experiments, and is represented by the relationship shown in FIG. 14, for example. This gives the desired development time.

In practice, the line width (C
In addition to D), the target line width (desired line width) is input, and the CD value is substituted for the formula correction development time [second] = (CD-target line width) / constant A shown in FIG. By doing so, the corrected development time is determined. By performing the development processing as described above for the development time thus obtained, it is possible to develop a resist pattern having a desired line width.

As described above, the "time x from the end of the exposure process to the start of the heating process in the post exposure baking unit (PEB)" and the "prebaking unit (which affects the formation of the resist pattern). PAB) standby time y "," temperature z in the coating and developing treatment apparatus ", and" atmospheric pressure w in the coating and developing treatment apparatus "are used as parameters to create a line width model,
By controlling the development time t, which is one of the development processing conditions, based on this line width model, it is possible to predict the line width that cannot be precisely controlled only by the exposure conditions in the exposure apparatus 100. Forward control becomes possible. This enables precise control of the line width, which also contributes to the improvement of yield.

Further, the line width can be easily controlled by controlling the most easily controllable development time among a plurality of development processing conditions such as the development time, the concentration of the developer or the temperature of the developer.

Further, among these parameters, x and y are parameters relating to time. Therefore, performing such line width control for each wafer is effective for the single wafer processing apparatus according to the present embodiment. is there. That is, the time may be different for each wafer.

Furthermore, by creating the line width model according to the type of resist, it is possible to create the line width model according to the difference in the concentration and viscosity of the resist. The development processing conditions can be controlled according to the type of resist. This also applies to the case of film thickness control described below.

FIG. 15 shows data stored in the film thickness model storage unit 65 shown in FIG. This film thickness model uses the above atmospheric pressure p, the cup temperature q, and the humidity r in the same manner as the above line width model: film thickness model T = ep + fq + gr + i (e, f, g, i
Can be expressed as a constant). The film thickness that will actually be formed can be obtained and predicted by such a model formula. The relationship between the number of rotations of the wafer and the film thickness when the resist film is formed has been previously obtained by an experiment, for example, as shown in FIG.
It is expressed by the relationship shown in FIG. As a result, a desired wafer rotation speed can be obtained. As an example, T = 4050Å
(405 nm) and the target film thickness is 4000Å (40
In the case of 0 nm), the target film thickness of 4000 Å (400 nm) can be achieved by changing the rotation speed of the wafer from 3500 rpm to 3700 rpm.

As described above, the "atmospheric pressure p" and the "temperature CP of the cup CP" which affect the formation of the resist film.
And a "humidity r in the unit" are used as parameters, and by controlling the number of rotations of the wafer, which is one of the resist film forming conditions, based on the film thickness model, Forward control becomes possible. That is, in the past, data such as the atmospheric pressure, the temperature and the humidity of the cup CP were not used for controlling the film thickness, but in the present embodiment, by predicting the film thickness by using these parameters, it is possible to obtain accurate data. The film thickness can be controlled. This also contributes to the improvement of yield.

In addition, by controlling the number of rotations of the wafer, which is the most controllable, among the plurality of resist film forming conditions such as the number of rotations of the wafer, the temperature of the resist solution, the supply amount of the resist solution or the discharge speed of the resist, it is easy to control. The film thickness can be controlled.

Further, since these parameters p, q, and r do not relate to time, it is not necessary to control the film thickness for each wafer, and for example, a lot unit may be used.

FIG. 17 shows the relationship between the heating temperature in the post exposure baking unit (PEB) and the line width of the resist pattern. This shows that the higher the heating temperature, the narrower the line width. Thus, as in the case shown in FIG. 14, instead of controlling the development processing conditions, the heating temperature in the post-exposure baking unit (PEB) is controlled by using the above line width model, so that the line width can be fed forward. It can be controlled precisely. In addition, by controlling both the heating temperature and the developing time as described above,
The line width can be controlled with higher accuracy.

Similarly, FIG. 18 also shows the relationship between the heating temperature in the prebaking unit (PAB) and the resist film thickness. This shows that the higher the heating temperature, the smaller the film thickness. As a result, as in the case shown in FIG. 16, instead of controlling the number of rotations of the wafer, by controlling the heating temperature in the pre-baking unit (PAB) using the film thickness model, the film thickness can be precisely fed forward. Can be controlled. Further, the line width can be controlled with higher accuracy by performing both the control of the heating temperature and the control of the number of rotations of the wafer.

Further, although the relation between the line width and the film thickness is not described in the present embodiment, if this relation is known, the line width and the film thickness can be precisely controlled based on this relation. It can be carried out.

The present invention is not limited to the embodiments described above, and various modifications can be made.

For example, in the above embodiment, the line width control controls at least one of the developing time and the heating temperature, and the film thickness control controls at least one of the wafer rotation speed and the heating temperature. Not limited to this, by controlling the heat treatment temperature in the baking unit (BAKE), the heating unit (HP) 113, or the like, or the cooling temperature in the cooling treatment unit (CPL) or the transfer / cooling treatment unit (TCP), etc. It is possible to control the line width with higher accuracy.

When controlling the line width, not only the developing time may be controlled as the developing processing condition, but also the concentration and temperature of the developing solution may be controlled. Alternatively, when controlling the film thickness, not only the rotation number of the wafer may be controlled as the resist film forming condition, but also the temperature of the resist, the discharge speed of the resist from the nozzle, and the like may be controlled.

Further, since the wafer transfer time by the first main transfer device A1 and the second main transfer device A2 is considered to be one of the factors that influence the fluctuation of the line width and the resist film thickness, this transfer The line width model and the film thickness model can be created by using time as a parameter. With this, it is possible to precisely control the line width and the like by controlling each processing condition and the like as described above.

Further, not only the control of the heating temperature in the post-exposure baking unit (PEB) and the pre-baking unit (PAB) shown in FIGS. 17 and 18, but also the heating time, the heating rate, etc. may be controlled. It is also possible to control the cooling temperature and the cooling time in the cooling processing unit (CPL), the cooling rate or the like.

Furthermore, in the above embodiment, the case where a semiconductor wafer is used has been described, but the present invention is not limited to this, and the present invention can be applied to a glass substrate used for a liquid crystal display or the like.

Next, another embodiment will be described.

FIG. 19 is a conceptual control block diagram for explaining the present embodiment. This control system is, for example, a combination of a feedforward control system FF and a feedback control system FB.

In this feed-forward control system FF, the feed-forward controller 51 sends operation amount information to the operation means 57 based on the target value 53 of the controlled object 58, the disturbance information by the disturbance detection means 52, and the function model 50. Output. The feedforward control system FF is the control system described so far, and the controlled object 58 is, for example, the resist film thickness or the line width. The function model 50 includes the line width model, the film thickness model, etc., and the disturbance detecting means 52 detects the sensor values S1 to S3 and Sa to Sd.
And a memory (not shown) for storing parameter values such as times x and y. Further, the operating means 57 includes the developing time, the number of rotations of the wafer during the resist coating process, and the like,
Alternatively, although not described above, the exposure amount in the exposure apparatus 100 is included. FIG. 23A shows the exposure amount (Dose) (m
J) and the line width (nm) are shown. As described above, it is known that the exposure amount and the line width are in a substantially proportional relationship, so that the line width can be easily controlled by the exposure amount. The exposure amount-line width model may be stored in advance by a storage unit (not shown).

The feedback control system FB includes the controlled object 5
8 is detected by the control amount detecting means 56, the control amount information is compared with the target value 53 by the comparing means 59, and the feedback controller 54 outputs the operation amount information to the operating means 57 based on the comparison result. The control amount detection means 56 includes, for example, a film thickness inspection device 119 and a line width inspection device 118 (see FIG. 3). Examples of the film thickness inspection device 119 include, but are not limited to, an optical interferometer and a spectrophotometer.
The line width inspection device 118 may be, for example, a scanning electron microscope or an inspection device using pattern matching, but is not limited to these.

Then, as shown in FIG. 20, the feedforward controller 51 and the feedback controller 54 are connected to the main controller 60 and operate under the command of the main controller 60. In the present embodiment, this control system 66 is included in the control unit 35 shown in FIG. 11, for example.

The feedforward controller 5
The controller 1 and the feedback controller 54 have a storage device, a processor, and the like for storing a program for performing a predetermined process, which is not shown.

Next, the present embodiment will be described more specifically with reference to the flows shown in FIGS. 21 and 22.

FIG. 21 shows a control flow for controlling the resist film thickness, for example. In this example, first, the data of each of the above parameters is collected before the processing in the coating and developing treatment apparatus 1 (before the start of the lot) (step 211). After collecting the data, the feedforward controller 51 displays the film thickness model (film thickness model T, rotation speed-film thickness model storage unit 2
9 (see FIG. 11 and FIG. 16), the wafer rotation speed is calculated and predicted (steps 212-1, 212-2). After predicting the rotation speed of the wafer, the rotation speed recipe is input to the apparatus 1 (step 213), and a resist film is actually formed on the wafer according to the recipe (step 214). The input of the recipe may be performed manually by a worker.

After forming the resist film, the film thickness inspection apparatus 1
The resist film thickness is measured by 19 (step 21)
5). After the film thickness is measured, the number of rotations of the wafer having the target film thickness is calculated from the measured value of the film thickness (step 21).
6). This rotation speed can be calculated, for example, from a rotation speed-film thickness model. In addition to the calculation result of this rotation speed, each parameter value (for example, the above-mentioned atmospheric pressure p, cup temperature q, humidity r and the like which are sensor data) when the resist film is formed at this rotation speed is stored in the database of the film thickness model. It is preferable to add it to. This is because if the recalculation is performed with the added contents, the database will be enriched and more precise control will be possible.

After calculating the rotation speed in step 216, the rotation speed of the wafer when the resist film is actually formed (the rotation speed predicted in step 212-2) and step 21
It is determined whether or not the rotation speed calculated in 6 matches (step 217). If they match, the wafer processing is continued at the rotation speed (step 218-1). If they do not match, the rotation speed calculated in step 216 is changed (corrected) (step 218-2) and then the wafer processing is continued. FIG. 24 shows the rotation speed-film thickness model storage unit 29.
3 shows a rotation speed-film thickness model stored in FIG.

Referring to FIG. 24, step 218-
1, 218-2 will be specifically described. Now, assume that the target film thickness is 400 (nm), the rotation speed (predicted rotation speed) during actual processing is 3700 rpm, and the measured film thickness is 4
It is assumed that the thickness is 05 nm. That is, when the measured film thickness deviates from the target value, the rotation speed is corrected from 3700 rpm to, for example, 3950 rpm, and the wafer is processed. It is also preferable to add or update the corrected rotational speed-film thickness model indicated by the broken line in the database.

FIG. 22 shows a control flow for controlling the line width of the resist pattern, for example. In this control flow, an example of operating the line width by the exposure amount (Dose) is given. In this example, first, before the processing in the coating and developing treatment apparatus 1 (before the start of the lot), the data collection of the parameters relating to the fluctuation of the line width is performed (step 221). This parameter is, for example, the time y as described above, but is not limited to this. Here, as described above, by preparing the exposure amount-line width model shown in FIGS. 23A and 23B in advance, the line width can be controlled by operating the exposure amount. Since the time x is the time after the exposure process is completed, this parameter cannot be used.

After collecting the data, the feedforward controller 51 uses the line width model (line width model CD, exposure amount-line width model) to predict the exposure amount by calculating the exposure amount (steps 222-1 and 222). -2). After predicting the exposure amount, the rotation speed recipe is input to the exposure apparatus 100 (step 223), and the wafer is exposed according to the recipe (step 224). The input of the recipe may be performed manually by a worker.

After the exposure process is completed, a resist pattern is formed by performing a predetermined process such as a developing process. Then, the line width inspection device 118 measures the line width (step 225). After the line width is measured, the exposure amount that becomes the target line width is calculated from the measured value of the line width (step 226).
This exposure amount can be calculated, for example, from an exposure amount-line width model. In addition, with the calculation result of this exposure amount,
It is preferable to add each parameter when the exposure processing is performed with this exposure amount to the database of the line width model.
This is because if the recalculation is performed with the added contents, the database will be enriched and more precise control will be possible.

Here, as shown in FIG. 23C, the exposure amount (Dose) is the intensity of the lamp as the light source and the time during which the shutter for passing and blocking the light from the lamp is open. Calculated by product. The time when the shutter is open is the time when the exposure light passes and is applied to the substrate. Therefore, the line width can be controlled by operating the exposure amount depending on the intensity of the lamp or the time when the shutter is open.

After the exposure amount is calculated in step 226, the exposure amount when the exposure process is actually performed (step 222-2
It is determined whether or not the exposure amount predicted in step S2) and the exposure amount calculated in step 226 match (step 22).
7). If they match, the wafer processing is continued (step 228-1). If they do not match, step 216
After changing (correcting) the exposure amount calculated in step (step 22)
8-2) Continue processing the wafer.

Needless to say, it is of course possible to perform such feedforward control and feedback control of the line width by operating the developing time in the developing process.

In this embodiment, the wafer processed by the feedforward control is subjected to film thickness and line width measurement to adaptively correct the number of rotations of the wafer, the exposure amount, and the developing time. The film thickness and line width can be controlled.
Therefore, a desired resist film and resist pattern can be formed.

[0128]

As described above, according to the present invention,
The line width of the resist pattern and the resist film thickness can be controlled easily and precisely, which contributes to the improvement of yield.

[Brief description of drawings]

FIG. 1 is a plan view of a coating and developing treatment apparatus according to an embodiment of the present invention.

FIG. 2 is a front view of the coating and developing treatment apparatus shown in FIG.

FIG. 3 is a rear view of the coating and developing treatment apparatus shown in FIG.

FIG. 4 is a perspective view showing a main wafer transfer device according to one embodiment.

5 is a front view for explaining the flow of clean air in the coating and developing treatment apparatus shown in FIG.

FIG. 6 is a plan view showing a resist coating processing unit according to one embodiment.

7 is a cross-sectional view showing the resist coating processing unit shown in FIG.

FIG. 8 is a cross-sectional view showing a development processing unit according to one embodiment.

FIG. 9 is a plan view showing a pre-baking unit or a post-exposure baking unit according to an embodiment.

10 is a cross-sectional view of the unit shown in FIG.

FIG. 11 is a configuration diagram showing a control system for controlling the coating and developing treatment apparatus according to the present invention.

FIG. 12 is a flowchart showing a series of processing steps of the coating and developing processing apparatus according to the present invention.

FIG. 13 is a diagram showing a line width model and its respective parameters.

FIG. 14 is a diagram showing a correlation between development time and line width.

FIG. 15 is a diagram showing a film thickness model and its parameters.

FIG. 16 is a diagram showing a relationship between the number of rotations of a wafer and a film thickness.

FIG. 17 is a diagram showing the relationship between the heating temperature and the line width in the post-exposure baking unit.

FIG. 18 is a diagram showing the relationship between the heating temperature and the film thickness in the prebaking unit.

FIG. 19 is a block diagram showing a control system according to another embodiment.

20 is a block diagram showing a controller unit of the control system shown in FIG.

FIG. 21 is a control flow chart for controlling the resist film thickness.

FIG. 22 is a control flow chart in which a line width of a resist pattern is a control target.

23A and 23B show the relationship between the exposure dose and the line width, and FIG. 23C is a diagram showing the formula of the exposure dose.

FIG. 24 is a diagram for explaining an operation amount correction operation when a film thickness is a control target.

[Explanation of symbols]

W: Semiconductor wafer A1 ... First main wafer transfer device A2 ... Second main wafer transfer device Sa, Sb, Sc, Sd ... Temperature / pressure sensor S1 ... Barometric pressure sensor S2 ... Cup temperature sensor S3 ... Humidity sensor p, q, r ... Each parameter of the film thickness model x, y, z ... Each parameter of the line width model 1. Coating and developing treatment device 28 ... Line width model storage 29 ... Film thickness model storage unit 32 ... Temperature controller 34 ... Rotation speed controller 35 ... Control unit 61 ... Sensor measurement data storage unit 62 ... Wafer data storage unit 63 ... Process recipe data storage unit 64 ... Line width model storage 65 ... Film thickness model storage unit 100 ... Exposure apparatus 51 ... Feed forward controller 54 ... Feedback controller 60 ... Main controller 118 ... Film thickness inspection device 120 ... Line width inspection device

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Katayama Kyosei, the inventor             TBS release, 5-3-6 Akasaka, Minato-ku, Tokyo             Sending Center Tokyo Electron Limited (72) Inventor Michio Tanaka             TBS release, 5-3-6 Akasaka, Minato-ku, Tokyo             Sending Center Tokyo Electron Limited (72) Inventor Ryoichi Uemura             TBS release, 5-3-6 Akasaka, Minato-ku, Tokyo             Sending Center Tokyo Electron Limited F-term (reference) 2H096 AA25 CA14 GA29                 5F046 JA01 JA13 JA21 JA27 KA10                       LA03 LA13 LA14 LA19

Claims (49)

[Claims] 1. A substrate processing apparatus for forming a desired resist pattern by forming a resist film on at least a substrate and performing a developing process, wherein the resist film is created based on a plurality of parameters involved in forming the resist pattern. And a means for storing at least one of a resist film forming condition and a development processing condition based on the function model. 2. The substrate processing apparatus according to claim 1, wherein the control unit controls a developing time of the developing processing conditions. 3. The substrate processing apparatus according to claim 1, wherein the resist film is formed by rotating the substrate, and the control unit controls the resist film forming conditions. A substrate processing apparatus, characterized in that the number of rotations of the substrate is controlled. 4. Any one of claims 1 to 3
Item 5. The substrate processing apparatus according to item 4, wherein the functional model is created for each type of the resist. 5. A resist film is formed on a substrate, the substrate is transferred to an exposure device, and the substrate received from the exposure device is subjected to a first thermal treatment and then a development treatment,
In a substrate processing apparatus for forming a desired resist pattern, a means for storing a function model created based on a plurality of parameters involved in forming the resist pattern, resist film forming conditions, development based on the function model. A substrate processing apparatus comprising: a means for controlling at least one of the processing condition and the first thermal processing condition. 6. The substrate processing apparatus according to claim 5, further comprising means for performing a second thermal treatment after forming the resist film, wherein the functional model relates to a line width of the resist pattern. , At least the time from the end of the exposure processing to the start of the first thermal processing, the standby time of the substrate after the second thermal processing, the temperature in the substrate processing apparatus, and the substrate A substrate processing apparatus, wherein the atmospheric pressure in the processing apparatus is used as the parameter. 7. The substrate processing apparatus according to claim 6, wherein the control unit controls a developing time of the developing processing conditions. 8. The substrate processing apparatus according to claim 7, wherein the control unit further controls one of a concentration of a developing solution used for the developing process and a temperature of the developing solution in the developing process conditions. A characteristic substrate processing apparatus. 9. The substrate processing apparatus according to claim 6, wherein the control unit is one of at least the temperature, time, and temperature rising / falling rate of the first thermal processing among the first thermal processing conditions. A substrate processing apparatus characterized by controlling the substrate. 10. The substrate processing apparatus according to claim 6, wherein the control unit performs the control for each substrate. 11. The substrate processing apparatus according to claim 5, wherein the resist film is formed by rotating a substrate in a container, and the functional model is a resist film thickness. Is about
At least the atmospheric pressure at the time of forming the resist film, the temperature of the container, and the humidity are used as the parameters. 12. The substrate processing apparatus according to claim 11, wherein the control unit controls the number of rotations of the substrate among the resist film forming conditions. 13. The substrate processing apparatus according to claim 12, wherein the control unit further controls either the temperature of the resist or the discharge speed of the resist. 14. The substrate processing apparatus according to claim 11, further comprising a means for performing a second thermal treatment after forming the resist film, wherein the control means includes the second thermal treatment conditions. At least one of the temperature, time, and temperature rising / falling rate of the second thermal treatment is controlled. 15. The substrate processing apparatus according to claim 5, wherein the functional model is created for each type of the resist. 16. The substrate processing apparatus according to claim 6 or 11, wherein a resist film forming unit that forms the resist film, a heat treatment unit that performs the first and second thermal treatments, and the developing unit. And a transfer mechanism that transfers the substrate between at least the resist film forming unit, the heat treatment unit, and the development processing unit, wherein the functional model is a transfer time of the substrate by the transfer mechanism. Further, the substrate processing apparatus is characterized by using parameters. 17. A substrate processing apparatus for forming a desired resist film by performing a thermal treatment after forming a resist film on a substrate, which is created based on a plurality of parameters involved in forming the resist film. A substrate processing apparatus, comprising: a unit that stores the generated functional model; and a unit that controls at least one of a resist film forming condition and a thermal processing condition based on the functional model. 18. The substrate processing apparatus according to claim 17, wherein the resist film is formed by rotating the substrate in a container, and the functional model is at least the resist. A substrate processing apparatus, wherein atmospheric pressure during film formation, temperature of the container, and humidity are used as the parameters. 19. The substrate processing apparatus according to claim 17, wherein the control unit controls the rotation speed of the substrate among the resist film forming conditions. 20. The substrate processing apparatus according to claim 19, wherein the control unit further controls either the temperature of the resist or the discharge speed of the resist. 21. The substrate processing apparatus according to claim 17, wherein the control unit controls at least one of the temperature, time, and temperature rising / falling rate of the thermal processing among the thermal processing conditions. Substrate processing equipment. 22. The substrate processing apparatus according to claim 17, wherein the functional model is created for each type of the resist. 23. The substrate processing apparatus according to claim 1, further comprising a film thickness inspection unit that inspects a resist film thickness formed under the resist film formation condition controlled by the control unit, A substrate processing apparatus, comprising: a resist film forming condition correction unit that compensates the resist film forming condition based on the resist film thickness inspected by the film thickness inspection unit. 24. The substrate processing apparatus according to claim 23, wherein the resist film is formed by rotating a substrate, and the resist film formation condition correction means is configured to correct the resist film. A substrate processing apparatus which corrects the rotation speed of the substrate among the film forming conditions. 25. The substrate processing apparatus according to claim 1, further comprising pattern inspection means for inspecting a resist pattern formed under the development processing conditions controlled by the control means, wherein the control means is a pattern. A substrate processing apparatus comprising: a development processing condition correction means for correcting the development processing condition based on the resist pattern inspected by the inspection means. 26. The substrate processing apparatus according to claim 25, wherein the development processing condition correction unit corrects the development time of the development processing conditions. 27. A substrate on which a desired resist pattern is formed by forming a resist film on at least a substrate, passing the substrate on which the resist film is formed to an exposure device, and receiving the exposed substrate and performing a developing process. In the processing apparatus, means for storing a function model created based on a plurality of parameters involved in forming the resist pattern, and based on the function model, resist film forming conditions, development processing conditions and exposure processing conditions And a means for controlling at least one. 28. The substrate processing apparatus according to claim 27, wherein the control unit controls a developing time of the developing processing conditions. 29. The substrate processing apparatus according to claim 27, wherein the resist film is formed by rotating the substrate, and the control means controls the resist film forming conditions. A substrate processing apparatus, characterized in that the number of rotations of the substrate is controlled. 30. The substrate processing apparatus according to claim 27, wherein the control unit controls the exposure amount of the exposure processing conditions. 31. The substrate processing apparatus according to claim 27, further comprising a film thickness inspection unit that inspects a resist film thickness formed under the resist film formation condition controlled by the control unit, A substrate processing apparatus, comprising: a resist film forming condition correction unit that corrects the resist film forming condition based on the resist film thickness inspected by the film thickness inspection unit. 32. The substrate processing apparatus according to claim 31, wherein the resist film is formed by rotating the substrate, and the resist film forming condition correction means is provided for the substrate. A substrate processing apparatus characterized in that the number of rotations is corrected. 33. The substrate processing apparatus according to claim 27, further comprising a pattern inspection unit that inspects a resist pattern formed under the development processing conditions controlled by the control unit, wherein the control unit has a pattern. A substrate processing apparatus comprising: a development processing condition correction means for correcting the development processing condition based on the resist pattern inspected by the inspection means. 34. The substrate processing apparatus according to claim 33, wherein the development processing condition correction unit corrects the development time of the development processing conditions. 35. The substrate processing apparatus according to claim 27, further comprising a pattern inspection unit that inspects a resist pattern formed under the exposure processing condition controlled by the control unit, wherein the control unit has a pattern. A substrate processing apparatus comprising: an exposure processing condition correction means for correcting the exposure processing condition based on the resist pattern inspected by the inspection means. 36. The substrate processing apparatus according to claim 35, wherein the exposure processing condition correction means corrects an exposure amount of the exposure processing conditions. 37. A substrate processing method for forming a desired resist pattern by forming a resist film on a substrate and performing development processing, comprising: (a) based on a plurality of parameters involved in forming the resist pattern. A substrate processing method comprising: a step of creating a functional model; and (b) a step of controlling at least one of a resist film forming condition and a development processing condition based on the functional model. 38. The substrate processing method according to claim 37, wherein the step (b) includes a step of controlling a development time of the development processing conditions. 39. The substrate processing method according to claim 37, wherein the resist film is formed by rotating the substrate, and in the step (b), the resist film formation is performed. A substrate processing method comprising a step of controlling the number of rotations of the substrate among the conditions. 40. The substrate processing method according to claim 37, (c) inspecting a resist film thickness formed under the resist film forming conditions controlled in the step (b), and (d) And a step of correcting the resist film forming condition based on the resist film thickness inspected in step (c). 41. The substrate processing method according to claim 40, wherein the resist film is formed by rotating the substrate, and the step (d) is performed under the resist film forming condition. Among them, the substrate processing method is characterized in that the number of rotations of the substrate is corrected. 42. The substrate processing method according to claim 37, (e) inspecting the resist pattern formed under the development processing conditions controlled in step (b), and (f) the step ( and a step of correcting development processing conditions based on the resist pattern inspected in step e). 43. The substrate processing method according to claim 42, wherein the step (f) corrects a developing time in the developing processing conditions. 44. The substrate processing method according to claim 37, wherein the functional model relates to a line width of the resist pattern or a resist film thickness. Substrate processing method. 45. The substrate processing method according to claim 37, further comprising a step of creating the functional model for each type of the resist. Method. 46. A substrate on which a desired resist pattern is formed by forming a resist film on at least a substrate, passing the substrate on which the resist film is formed to an exposure device, and receiving the exposed substrate for development processing. In the processing method, (a) a step of creating a functional model created based on a plurality of parameters involved in forming the resist pattern; (b) a resist film forming condition based on the functional model;
And a step of controlling at least one of a development processing condition and an exposure processing condition. 47. The substrate processing method according to claim 46, (c) inspecting a resist film thickness formed under the resist film forming conditions controlled in the step (b), and (d) And a step of correcting the resist film forming condition based on the resist film thickness inspected in step (c). 48. The substrate processing method according to claim 46, wherein (e) inspecting the resist pattern formed under the development processing conditions controlled in step (b), and (f) the step ( and a step of correcting development processing conditions based on the resist pattern inspected in step e). 49. The substrate processing method according to claim 46, (g) inspecting a resist pattern formed under the exposure processing conditions controlled in step (b), and (h) the step ( and a step of correcting the exposure processing condition based on the resist pattern inspected in c).