JP2010040802A - Light-emitting device - Google Patents

Light-emitting device Download PDF

Info

Publication number
JP2010040802A
JP2010040802A JP2008202599A JP2008202599A JP2010040802A JP 2010040802 A JP2010040802 A JP 2010040802A JP 2008202599 A JP2008202599 A JP 2008202599A JP 2008202599 A JP2008202599 A JP 2008202599A JP 2010040802 A JP2010040802 A JP 2010040802A
Authority
JP
Japan
Prior art keywords
emitting device
led element
light
heat storage
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008202599A
Other languages
Japanese (ja)
Other versions
JP5139916B2 (en
Inventor
Takahiro Wada
崇宏 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Electronics Co Ltd
Original Assignee
Citizen Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Electronics Co Ltd filed Critical Citizen Electronics Co Ltd
Priority to JP2008202599A priority Critical patent/JP5139916B2/en
Publication of JP2010040802A publication Critical patent/JP2010040802A/en
Application granted granted Critical
Publication of JP5139916B2 publication Critical patent/JP5139916B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Landscapes

  • Stroboscope Apparatuses (AREA)
  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device having improved heat dissipation that is used as a strobe flash light source. <P>SOLUTION: The light-emitting device includes: a circuit board 24 having a pair of electrodes 22, 23 on an insulating substrate 21; at least one LED element 25 mounted on the circuit board 24; a sealing resin layer 27 for sealing the LED element 25 with resin; a pair of heat storage layers 28, 29 that abuts on portions of the pair of electrodes 22, 23 around the outer periphery of the sealing resin layer 27 and takes in heat generated from the LED element 25 for accumulation; and a transmitting cover 31 in a cap shape having an optical lens 31d. An LED element emitting blue light is used for the LED element 25, and the sealing resin layer 27 contains a YAG-based phosphor. Also, the heat storage layers 28, 29 are formed by solder. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明はLED(Light emitting
diode)素子を用いた発光装置に関し、特にストロボのフラッシュ光源として用いられる発光装置に関する。
The present invention is based on LED (Light emitting
In particular, the present invention relates to a light emitting device used as a flash light source of a strobe.

従来からLEDの発熱を抑制するための放熱構造は数多く提案されている。例えば、特許文献1においては、図10に示されるように、ガラエポ樹脂からなる絶縁性を有する回路基板2の略中央部に貫通孔2aを設け、そこに高放熱部材5を配設し、この高放熱部材5上にLEDチップ6を搭載する構造を取っている。
LEDチップ6の発熱した熱を高放熱部材5に伝え、プリント基板8側に逃がす構造を取っている。
Conventionally, many heat dissipation structures for suppressing the heat generation of LEDs have been proposed. For example, in Patent Document 1, as shown in FIG. 10, a through-hole 2 a is provided in a substantially central portion of an insulating circuit board 2 made of glass epoxy resin, and a high heat dissipation member 5 is provided there. The LED chip 6 is mounted on the high heat dissipation member 5.
The heat generated by the LED chip 6 is transmitted to the high heat radiating member 5 and is released to the printed circuit board 8 side.

また、特許文献2においては、図11に示されるように、スリット12c部の絶縁部材13を挟んで一対の熱伝導率50W/m・K以上のメタル基板12を設け、その上面12aにバンプ付きLED素子16をフリップチップ実装し、また、LED素子16の真下でメタル基板12との隙間の間にはアンダーフィル樹脂17を設けた構造が示されている。
LED素子16の発熱した熱をメタル基板12に伝え、メタル基板12から外に放熱すると共に一対のメタル基板12からプリント基板側にも熱を逃がす構造になっている。
Further, in Patent Document 2, as shown in FIG. 11, a pair of metal substrates 12 having a thermal conductivity of 50 W / m · K or more are provided across the insulating member 13 of the slit 12c, and bumps are provided on the upper surface 12a. The LED element 16 is flip-chip mounted, and a structure in which an underfill resin 17 is provided between the gap between the LED element 16 and the metal substrate 12 is shown.
The heat generated by the LED element 16 is transmitted to the metal substrate 12 to be radiated to the outside from the metal substrate 12 and the heat is also released from the pair of metal substrates 12 to the printed circuit board side.

特開2005−64047号公報JP 2005-64047 A 特開2003−218398号公報JP 2003-218398 A

上記で述べた特許文献1に示された構造は、LEDの外径サイズの制約から高放熱部材の放熱表面積を拡大するのは困難であり、高電流のパルス点灯時における更なる放熱特性の向上には限界が生じる。   In the structure described in Patent Document 1 described above, it is difficult to expand the heat dissipation surface area of the high heat dissipation member due to the limitation of the outer diameter size of the LED, and further improvement of heat dissipation characteristics at the time of high current pulse lighting There is a limit.

また、特許文献2に示された構造はメタル基板を用いた構造で、メタル基板を用いた構造は優れた放熱特性が現れて高輝度高出力の用途に向いている。しかしながら、この構造は基板に金属を用いることから材料費のアップが避けられない。また、スリット部に絶縁部材を充填する工程も必要とすることから、加工工程も多くなって製作コストが高くなると云う問題がある。   The structure disclosed in Patent Document 2 is a structure using a metal substrate, and the structure using a metal substrate is suitable for high luminance and high output applications because of its excellent heat dissipation characteristics. However, this structure inevitably increases the material cost because a metal is used for the substrate. In addition, since a process of filling the slit portion with an insulating member is required, there is a problem that the manufacturing process increases and the manufacturing cost increases.

本発明は、上記の課題に鑑みてなされたもので、その目的とするところは、高電流のパルス点灯時において発熱が抑制されて高輝度が得られ、また、製作コストも安くできる発光装置を得ることである。   The present invention has been made in view of the above-described problems, and the object of the present invention is to provide a light-emitting device that can suppress heat generation during high-current pulse lighting, obtain high brightness, and can be manufactured at low cost. Is to get.

課題を解決するための手段として、本発明の請求項1に記載の発光装置の特徴は、LED素子を用いた発光装置であって、前記発光装置は絶縁性の基板に一対の電極を設けた回路基板と、該回路基板上に少なくとも1個を搭載したLED素子と、該LED素子を樹脂で封止した封止樹脂層と、該封止樹脂層の外周回りにあって前記一対の電極の一部分とそれぞれ接触して前記LED素子から発生した熱を取り込んで一次的に溜める蓄熱層を有することを特徴とする。   As a means for solving the problems, the light-emitting device according to claim 1 of the present invention is a light-emitting device using an LED element, and the light-emitting device is provided with a pair of electrodes on an insulating substrate. A circuit board; an LED element having at least one mounted on the circuit board; a sealing resin layer in which the LED element is sealed with a resin; and the pair of electrodes around the outer periphery of the sealing resin layer. It has a heat storage layer that takes in heat generated from the LED element by being in contact with each part and temporarily stores the heat.

LED素子を写真撮影用のストロボのフラッシュ光源として用いる場合は、高電流印加の下でパルス点灯を行い高輝度を出力させる。しかしながら、この時のLED素子からの発熱量が大きいために熱によって発光効率が低下し、輝度は余り高くならない。そこで、LED素子から発生する熱を積極的に下げる必要がある。
本発明の請求項1に記載の構成の下では、LED素子から発生した熱は一対の電極に伝わり、そして、その一対の電極と接触している蓄熱層に伝わって、その蓄熱層にも熱が溜め込まれる。蓄熱層を封止樹脂層の回りに、つまり、LED素子の最も近い位置に設けていることから、LED素子から発生する熱は継続的に早い時間で蓄熱層に伝わって溜まる。即ち、LED素子から継続的に熱が早く逃げてLED素子の発熱を低く抑制することができるようになる。
When an LED element is used as a flash light source for a stroboscope for photography, pulse lighting is performed under application of a high current to output high luminance. However, since the amount of heat generated from the LED element at this time is large, the light emission efficiency is lowered by heat, and the luminance is not so high. Therefore, it is necessary to actively reduce the heat generated from the LED element.
Under the configuration of the first aspect of the present invention, the heat generated from the LED element is transmitted to the pair of electrodes, and is transmitted to the heat storage layer in contact with the pair of electrodes, and the heat storage layer is also heated. Is accumulated. Since the heat storage layer is provided around the sealing resin layer, that is, at the closest position of the LED element, the heat generated from the LED element is continuously transmitted to the heat storage layer in a short time. That is, heat can escape from the LED element quickly and heat generation of the LED element can be suppressed to a low level.

また、本発明の請求項2に記載の発光装置の特徴は、LED素子を用いた発光装置であって、前記発光装置は絶縁性の基板に一対の電極を設けた回路基板と、該回路基板上に少なくとも1個を搭載したLED素子と、該LED素子を樹脂で封止した封止樹脂層と、絶縁性の台座に一対の電極を設けて前記回路基板を搭載する台座基板と、前記回路基板の外周回りにあって前記回路基板の前記一対の電極及び前記台座基板の前記一対の電極の一部分とそれぞれ接触して前記LED素子からの発生した熱を取り込んで一次的に溜める蓄熱層と、を有することを特徴とする。   The light emitting device according to claim 2 of the present invention is a light emitting device using an LED element, wherein the light emitting device includes a circuit board provided with a pair of electrodes on an insulating substrate, and the circuit board. An LED element on which at least one LED is mounted; a sealing resin layer in which the LED element is sealed with a resin; a base board on which a circuit board is mounted by providing a pair of electrodes on an insulating base; and the circuit A heat storage layer that is around the outer periphery of the substrate and contacts each of the pair of electrodes of the circuit board and a part of the pair of electrodes of the pedestal substrate to take in heat generated from the LED element and temporarily store the heat; It is characterized by having.

上記構成の下においては、蓄熱層を回路基板の外周回りに設ける。蓄熱層の体積は大きければ大きいほど溜められる熱量を多くすることができて好ましい。回路基板の外周回りに設ける蓄熱層は回路基板の大きさに制限を受けずに所望の体積をもって蓄熱層を形成することができる。つまり、LED素子から発生した熱を十分に溜めるに足りる体積をもって蓄熱層を形成することができる。
そして、LED素子からの発熱量を十分に取り込んでLED素子の発熱を低く抑制することができる。
Under the above configuration, the heat storage layer is provided around the outer periphery of the circuit board. The larger the volume of the heat storage layer, the greater the amount of heat that can be stored, which is preferable. The heat storage layer provided around the outer periphery of the circuit board can be formed with a desired volume without being limited by the size of the circuit board. That is, the heat storage layer can be formed with a volume sufficient to store heat generated from the LED element.
And the heat_generation | fever amount from a LED element can fully be taken in, and the heat_generation | fever of an LED element can be suppressed low.

また、本発明の請求項3に記載の発光装置の特徴は、前記発光装置には光学レンズを設けたキャップ形状の透過性のカバーを有することを特徴とする。   The light emitting device according to claim 3 of the present invention is characterized in that the light emitting device has a cap-shaped transparent cover provided with an optical lens.

カバーの光学レンズによってLED素子からの光が集光されて撮影する被写体を明るく照明する。また、カバーを有することで封止樹脂層や蓄熱層を保護して損傷防止、変質防止などの効果が得られる。また併せて、発光装置をコンパクトな形状に纏めることができる。   The light from the LED element is condensed by the optical lens of the cover to illuminate the subject to be photographed brightly. Moreover, the sealing resin layer and the heat storage layer are protected by having the cover, and effects such as damage prevention and alteration prevention can be obtained. In addition, the light emitting device can be combined into a compact shape.

また、本発明の請求項4に記載の発光装置の特徴は、前記カバーのキャップ形状は頭部と筒部からなり、前記頭部に前記光学レンズが設けられており、前記封止樹脂層と前記蓄熱層は前記筒部の内部に配置されていて、前記封止樹脂層及び前記蓄熱層と前記カバーとの間には隙間を有することを特徴とする。   Further, the light emitting device according to claim 4 of the present invention is characterized in that the cap shape of the cover is composed of a head portion and a cylindrical portion, the optical lens is provided on the head portion, and the sealing resin layer The heat storage layer is disposed inside the cylindrical portion, and has a gap between the sealing resin layer and the heat storage layer and the cover.

この構成の下では、封止樹脂層と蓄熱層がカバーの筒部の内部に配置されていて隙間を有することから、蓄熱層に溜まった熱は隙間、即ち、空気層があるためにカバーに殆ど伝わらない。また、封止樹脂層にも熱が溜まるが、この熱も隙間があるためにカバーに殆ど伝わらない。このため、カバーの頭部に設けられた光学レンズは熱などによる影響を受けずにレンズ形状などの初期品質を維持することができる。
また、隙間なる空気層があるためにLED素子からの出射光は屈折を起こし、屈折による分散が発生する。そして、例えば請求項8や請求項9に記載した構成を取った場合には発光色の異なる光の混ざり合いが分散作用によって良く混ざり合うようになる。
Under this configuration, since the sealing resin layer and the heat storage layer are disposed inside the cylindrical portion of the cover and have a gap, the heat accumulated in the heat storage layer is in the cover because there is a gap, that is, an air layer. It is hardly transmitted. In addition, although heat is accumulated in the sealing resin layer, the heat is hardly transmitted to the cover because there is a gap. For this reason, the optical lens provided at the head of the cover can maintain the initial quality such as the lens shape without being affected by heat or the like.
In addition, since there is an air layer that forms a gap, the light emitted from the LED element is refracted and dispersion due to refraction occurs. For example, when the configurations described in claims 8 and 9 are adopted, the mixture of light having different emission colors is well mixed by the dispersion action.

また、本発明の請求項5に記載の発光装置の特徴は、前記カバーの前記筒部の内周面には反射膜を設けていることを特徴とする。   The light emitting device according to claim 5 of the present invention is characterized in that a reflective film is provided on the inner peripheral surface of the cylindrical portion of the cover.

この構成の下では、LED素子からカバーの筒部の内周面に向かった光は反射膜によって反射される。そして、筒部内に戻され、あるいは光学レンズ側に向かって進む。このため、光学レンズを通過する光量が増える。光の利用効率が高められてより明るさが増す。   Under this configuration, light directed from the LED element toward the inner peripheral surface of the cylindrical portion of the cover is reflected by the reflective film. And it returns to the inside of a cylinder part or advances toward the optical lens side. For this reason, the amount of light passing through the optical lens increases. The light utilization efficiency is increased and the brightness is further increased.

また、本発明の請求項6に記載の発光装置の特徴は、前記カバーの光学レンズはフレネルレンズであることを特徴とする。   The light emitting device according to claim 6 of the present invention is characterized in that the optical lens of the cover is a Fresnel lens.

フレネルレンズを通過する光は平行光に変換される。このため、光の分散光が少なくなって被写体に入射する光量は増え、更に明るい照明が得られる。   Light passing through the Fresnel lens is converted into parallel light. For this reason, the amount of light incident on the subject is increased with less dispersed light, and a brighter illumination is obtained.

また、本発明の請求項7に記載の発光装置の特徴は、前記蓄熱層はハンダからなることを特徴とする。   The light emitting device according to claim 7 of the present invention is characterized in that the heat storage layer is made of solder.

半田の熱伝導率は電極材より低いものの熱を良く伝導する。また、低温で溶解するので蓄熱層の形成が容易である。更に、電極との密着性が良いので剥離なども生じない。蓄熱層の材料として好適に適用できる。   Although the thermal conductivity of the solder is lower than that of the electrode material, it conducts heat well. Moreover, since it melt | dissolves at low temperature, formation of a thermal storage layer is easy. Furthermore, since the adhesiveness with the electrode is good, peeling does not occur. It can be suitably applied as a material for the heat storage layer.

また、本発明の請求項8に記載の発光装置の特徴は、前記LED素子は青色発光のLED素子であり、前記封止樹脂層はシリコーン系樹脂にYAG系蛍光体が含有したものからなることを特徴とする。   Further, the light emitting device according to claim 8 of the present invention is characterized in that the LED element is a blue light emitting LED element, and the sealing resin layer is composed of a silicone resin containing a YAG phosphor. It is characterized by.

写真用のストロボ光源は白色光が必要とされる。青色発光のLED素子を用い、封止樹脂層にYAG系蛍光体を含有させることによって、僅かに青味成分を含んではいるものの白色光が得られる。また、封止樹脂層に用いるシリコーン系樹脂は紫外線や可視光などに劣化せず、耐光性に優れた特性を有する。また、耐湿性にも優れているので初期品質を長期間に渡って保持することができる。また、軟質性もあって耐衝撃性にも優れている。   White light is required for a strobe light source for photography. By using a blue light emitting LED element and containing a YAG phosphor in the sealing resin layer, white light can be obtained although it contains a slight blue component. In addition, the silicone resin used for the sealing resin layer does not deteriorate to ultraviolet rays or visible light, and has excellent light resistance. Moreover, since it is excellent also in moisture resistance, initial quality can be maintained over a long period of time. It is also soft and has excellent impact resistance.

また、本発明の請求項9に記載の発光装置の特徴は、前記LED素子は青色発光のLED素子と赤色発光のLED素子であり、前記封止樹脂層はシリコーン系樹脂にYAG系蛍光体が含有したものからなることを特徴とする。   The light emitting device according to claim 9 of the present invention is characterized in that the LED element is a blue light emitting LED element and a red light emitting LED element, and the sealing resin layer is made of a silicone resin and a YAG phosphor. It consists of what was contained.

青色発光のLED素子に加えて赤色発光のLED素子を配設すると青味成分が消えて白色度の高い白色光が得られる。そして、演色性や色再現性の向上がもたらされて、写真画質が良くなる。   When a red light emitting LED element is disposed in addition to a blue light emitting LED element, the blue component disappears and white light with high whiteness is obtained. Then, the color rendering properties and color reproducibility are improved, and the picture quality is improved.

また、本発明の請求項10に記載の発光装置の特徴は、前記請求項1乃至9のいずれかに記載の発光装置は筐体側に設けた一対のピンコンタクトと接触して該ピンコンタクトより電流の供給をうけることを特徴とする。   Further, the light emitting device according to claim 10 of the present invention is characterized in that the light emitting device according to any one of claims 1 to 9 is in contact with a pair of pin contacts provided on the housing side, and current is supplied from the pin contacts. It is characterized by receiving the supply of

上記の構成は、発光装置を直接マザーボードに固定する構造ではなく、ピンコンタクトを介して導通接続する構造を取る。ピンコンタクトなどの中間部材を介することで、中間部材に熱が伝導して放熱が早く行われるようになる。また、各種の電子部品を装着したマザーボードに対して熱の影響を最小限に抑えることができる。
また、ピンコンタクトを介して導通接続する構造は狭いスペースで発光装置の取付けが可能になるので部品密集度の高い筐体において好適な取付け構造となる。
The above configuration is not a structure in which the light emitting device is directly fixed to the mother board but a structure in which the light emitting device is conductively connected through a pin contact. By passing through an intermediate member such as a pin contact, heat is conducted to the intermediate member, so that heat is released quickly. In addition, the influence of heat on the motherboard on which various electronic components are mounted can be minimized.
In addition, the structure in which the conductive connection is made via the pin contact enables the light emitting device to be mounted in a narrow space, and thus is a preferable mounting structure in a casing having a high density of components.

以上、発明毎にその作用・効果を詳細に説明したが、大きく纏めると、高電流のパルス点灯時において発熱を低く抑えることができて輝度の高い明るい照明が得られる。また、蓄熱層を単に回路基板上や回路基板の外周回りに設ける構成なので構造的にも複雑にならず、蓄熱層の形成も容易であることから製作コストは安く抑えることができる。   As described above, the functions and effects of each invention have been described in detail. To sum up, it is possible to suppress heat generation during high-current pulse lighting and to obtain bright illumination with high brightness. Further, since the heat storage layer is simply provided on the circuit board or around the outer periphery of the circuit board, the structure is not complicated and the heat storage layer can be easily formed, so that the manufacturing cost can be reduced.

(第1実施形態)
以下、本発明を実施するための実施形態について図を用いながら説明する。最初に、第1実施形態に係る発光装置を図1〜図4を用いて説明する。なお、図1は本発明の第1実施形態に係る発光装置の要部断面図で、図2は図1における発光装置のカバーを取り除いて見たときの平面図、図3は図1における回路基板の斜視図を示している。また、図4は図1における蓄熱層の作用・効果を説明する説明図で、図4の(a)は印加するパルス波形図、図4の(b)はLED素子の発熱温度の変動を模式的に示した変動曲線図を示している。
(First embodiment)
Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. First, the light emitting device according to the first embodiment will be described with reference to FIGS. 1 is a cross-sectional view of a main part of the light emitting device according to the first embodiment of the present invention, FIG. 2 is a plan view when the cover of the light emitting device in FIG. 1 is removed, and FIG. 3 is a circuit in FIG. A perspective view of a substrate is shown. 4 is an explanatory diagram for explaining the operation and effect of the heat storage layer in FIG. 1. FIG. 4 (a) is a pulse waveform diagram to be applied, and FIG. 4 (b) is a schematic diagram showing fluctuations in the heating temperature of the LED element. The fluctuation curve figure shown automatically is shown.

本発明のLED素子を用いた発光装置はカメラなどに搭載されている写真撮影用のストロボのフラッシュ光源として用いられる発光装置である。写真撮影は非常に明るい照明が必要とされることから輝度の高い光源が用いられる。LED素子をストロボのフラッシュ光源に用いる場合は、非常に高いパルス電流を流して高い輝度を出力させる。例えば、通常の連続点灯時の定格電流に対して5〜50倍の電流で1〜1000ms間のパルス点灯を行う。
この時、LED素子の発熱量は大きいものとなって発光効率が低下し、輝度が低下してしまう。従って、所要の輝度を得るために積極的な放熱を行って発熱量を抑えることが必要とされる。
第1実施形態の発光装置はストロボのフラッシュ光源に適用できる構成を取るもので、以下にその構成を説明する。
The light-emitting device using the LED element of the present invention is a light-emitting device used as a flash light source for a photographic strobe mounted on a camera or the like. Since photography requires very bright illumination, a high-luminance light source is used. When an LED element is used as a flash light source of a strobe, a very high pulse current is passed to output a high luminance. For example, pulse lighting is performed for 1 to 1000 ms at a current 5 to 50 times the rated current during normal continuous lighting.
At this time, the amount of heat generated by the LED element becomes large, the light emission efficiency is lowered, and the luminance is lowered. Therefore, in order to obtain a required luminance, it is necessary to actively dissipate heat to suppress the heat generation amount.
The light emitting device of the first embodiment has a configuration applicable to a flash light source of a strobe, and the configuration will be described below.

図1において、21は基板で、基板21は絶縁性を有するガラスエポキシ樹脂やBTレジンなどの樹脂、あるいはセラミックなどからなる。
22、23は一対の電極で、22はアノード側の電極、23はカソード側の電極である。アノード側の電極22は基板21の上面から下面にと上面部22a、側面部22b(スルホール面)、下面部22cと繋がって設けられていて、この繋がった電極でもって電極22を構成している。同様に、カソード側の電極23も上面部23a、側面部23b(スルホール面)、下面部23cと繋がって電極23を構成している。本発明においては、基板21に一対の電極22、23を形成したものを回路基板24と表している。
In FIG. 1, reference numeral 21 denotes a substrate, and the substrate 21 is made of an insulating glass epoxy resin, a resin such as BT resin, or a ceramic.
22 and 23 are a pair of electrodes, 22 is an anode side electrode, and 23 is a cathode side electrode. The electrode 22 on the anode side is provided from the upper surface to the lower surface of the substrate 21 so as to be connected to the upper surface portion 22a, the side surface portion 22b (through hole surface), and the lower surface portion 22c, and the electrode 22 is configured by the connected electrodes. . Similarly, the cathode-side electrode 23 is connected to the upper surface portion 23a, the side surface portion 23b (through hole surface), and the lower surface portion 23c to form the electrode 23. In the present invention, a substrate 21 having a pair of electrodes 22 and 23 formed thereon is represented as a circuit board 24.

一対の電極22、23の材料には電気抵抗率が低く導電性に優れた特性を持ち、且つ、熱伝導率が高く熱伝導に優れた材料が選ばれる。この両者の特性を有する材料としてはCu、Al、Ag、Au金属などの金属材料が挙げられ、これらの金属材料の少なくとも1種を用いて単層あるいは復層にして電極を形成する。本実施形態においては、Cu金属膜の上にNiメッキを施し、その上にAuメッキでのAu金属膜を形成したものから形成している。
また更に、LED素子の発熱量を積極的に放熱するために一対の電極22、23の形成面積を大きく設計している。例えば、図3に示すように、一対の電極22、23の上面部22a、23a、側面部22b、23b、下面部22c(図3には図示していない)、23cの幅wを許容できる範囲で大きく取っている。そして、広範囲に熱が拡散して伝わり、熱の放熱が積極的に行われるようにしている。
The material of the pair of electrodes 22 and 23 is selected from materials having low electrical resistivity and excellent electrical conductivity, and high thermal conductivity and excellent thermal conductivity. Examples of the material having both characteristics include metal materials such as Cu, Al, Ag, and Au metal, and at least one of these metal materials is used to form an electrode in a single layer or a return layer. In the present embodiment, Ni plating is performed on a Cu metal film, and an Au metal film is formed thereon by Au plating.
Furthermore, the formation area of the pair of electrodes 22 and 23 is designed to be large in order to actively dissipate the heat generated by the LED element. For example, as shown in FIG. 3, the upper surface portions 22a and 23a, the side surface portions 22b and 23b, the lower surface portion 22c (not shown in FIG. 3) of the pair of electrodes 22 and 23, and the width w of the 23c can be allowed. Is taking a big. Then, heat is diffused and transmitted over a wide area so that heat is actively dissipated.

25はLED素子である。第1実施形態においては、窒化ガリウム系化合物であるInGaNからなるLED素子を用いており、青色発光の短波長の光を出射する。LED素子25はカソード側の電極23の上面部23a上に載置されて半田付けなどを介して固定される。
また、LED素子25は金線からなるボンディングワイヤ26でもってアノード側の電極22の上面部22aと接続している。
Reference numeral 25 denotes an LED element. In the first embodiment, an LED element made of InGaN, which is a gallium nitride-based compound, is used, and blue light emitting short wavelength light is emitted. The LED element 25 is placed on the upper surface portion 23a of the cathode-side electrode 23 and fixed through soldering or the like.
The LED element 25 is connected to the upper surface portion 22a of the anode-side electrode 22 by a bonding wire 26 made of a gold wire.

27は封止樹脂層である。第1実施形態においては、封止樹脂層27はシリコーン系樹脂にYAG系蛍光体を5〜60重量%の割合で配合したものからなる。YAG系蛍光体はYAL12:Ceなる化学式を持つ蛍光体を用いており、LED素子25の短波長の光に励起されて波長変換され、黄色の発光色を発する。
そして、黄色の発光色とLED25からの青色発光色とが混色して封止樹脂層27からは白色光が出射する。
Reference numeral 27 denotes a sealing resin layer. In the first embodiment, the sealing resin layer 27 is made of a silicone resin blended with a YAG phosphor at a ratio of 5 to 60% by weight. The YAG-based phosphor uses a phosphor having a chemical formula of Y 3 AL 5 O 12 : Ce, and is excited by the short wavelength light of the LED element 25 to be wavelength-converted to emit a yellow emission color.
Then, the yellow emission color and the blue emission color from the LED 25 are mixed, and white light is emitted from the sealing resin layer 27.

28、29は蓄熱層である。蓄熱層28、29は一対あり、蓄熱層28は電極22の上面部22a上に設けた蓄熱層であり、蓄熱層29は電極23の上面部23a上に設けた蓄熱層である。蓄熱層28と蓄熱層29は対をなしていて、蓄熱層28は電極22と接触し、電極22に伝導された熱を一次的に溜める働きをなす。また、蓄熱層29は電極23と接触し、電極23に伝導された熱を一次的に溜める働きをなす。また、蓄熱層28と蓄熱層29(分かり易くするために図2においては斜線で示している)は、接触しないように所要の隙間を設けて分離して設けている。これは、蓄熱層28、29を後述するように導電性のある半田で形成しているためで、蓄熱層28と蓄熱層29の導通を避けるためである。また、この一対の蓄熱層28、29は封止樹脂層27の外周回りに設けている。   28 and 29 are heat storage layers. The heat storage layers 28 and 29 are a pair, the heat storage layer 28 is a heat storage layer provided on the upper surface portion 22 a of the electrode 22, and the heat storage layer 29 is a heat storage layer provided on the upper surface portion 23 a of the electrode 23. The heat storage layer 28 and the heat storage layer 29 are paired. The heat storage layer 28 is in contact with the electrode 22 and functions to temporarily store the heat conducted to the electrode 22. The heat storage layer 29 is in contact with the electrode 23 and functions to temporarily store the heat conducted to the electrode 23. Further, the heat storage layer 28 and the heat storage layer 29 (shown by hatching in FIG. 2 for the sake of clarity) are provided separately by providing a necessary gap so as not to contact each other. This is because the heat storage layers 28 and 29 are formed of conductive solder as will be described later, so that conduction between the heat storage layer 28 and the heat storage layer 29 is avoided. The pair of heat storage layers 28 and 29 are provided around the outer periphery of the sealing resin layer 27.

蓄熱層28、29は、第1実施形態においては、半田でもって形成している。半田は錫(Sn)と鉛(Pb)を主成分とした合金で、熱伝導率(Sn、Pbの割合によっても異なるが、概ね40〜50W/m・Kの熱伝導率)は一対の電極22、23よりは低いものの良く熱を伝導する。また、半田は金属膜からなる電極22、23には良く接合し、樹脂には接合しない。
半田は低温で溶解するので、溶解状態で電極22、23に付着させ、その後に硬化することで蓄熱層28、29が容易に形成することができる。
The heat storage layers 28 and 29 are formed with solder in the first embodiment. Solder is an alloy mainly composed of tin (Sn) and lead (Pb), and the thermal conductivity (depending on the ratio of Sn and Pb, the thermal conductivity is approximately 40 to 50 W / m · K) is a pair of electrodes. Although it is lower than 22 and 23, it conducts heat well. Solder is well bonded to the electrodes 22 and 23 made of a metal film, and is not bonded to resin.
Since the solder dissolves at a low temperature, the heat storage layers 28 and 29 can be easily formed by adhering to the electrodes 22 and 23 in a dissolved state and then curing.

この蓄熱層28、29はLED素子25から発生した熱を取り込んで熱を一次的に溜めることを目的に設けている。つまり、バッファーとしての機能を果たす目的で設けている。
蓄熱層28、29はその体積量が大きければ大きいほど溜まる熱量も多くなる。従って、蓄熱層28、29の面積も大きく、また、厚みもより厚い方が好ましい。従って、一対の電極22、23の上面部22a、23aの面積を図3に示す如く大きく取って、その上に蓄熱層28、29を形成する。しかしながら、厚みの方は厚くなると発光素子20の厚みに影響を及ぼす。従って、発光素子20の厚みに影響を及ぼさない許容できる範囲の値を設定するのが良い。
The heat storage layers 28 and 29 are provided for the purpose of taking heat generated from the LED elements 25 and temporarily storing the heat. That is, it is provided for the purpose of serving as a buffer.
The larger the volume of the heat storage layers 28 and 29, the more heat is accumulated. Therefore, it is preferable that the heat storage layers 28 and 29 have a large area and a larger thickness. Therefore, the areas of the upper surface portions 22a and 23a of the pair of electrodes 22 and 23 are set large as shown in FIG. 3, and the heat storage layers 28 and 29 are formed thereon. However, as the thickness increases, the thickness of the light emitting element 20 is affected. Therefore, it is preferable to set an allowable range value that does not affect the thickness of the light emitting element 20.

30はレジスト膜である。このレジスト膜30はスルホールに設けた一対の電極22、23の側面部22b、23bに蓄熱層をなす半田が流れ込むのを防止する目的と、この部位における面を平坦面にして後述するカバー31の落着き状態を良好にするために設けている。このレジスト膜30にはマスキングテープなどが用いられる。   Reference numeral 30 denotes a resist film. The resist film 30 has a purpose of preventing the solder forming the heat storage layer from flowing into the side surface portions 22b and 23b of the pair of electrodes 22 and 23 provided in the through holes, and a surface of the cover 31 which will be described later with a flat surface at this portion. It is provided to improve the calm state. A masking tape or the like is used for the resist film 30.

ここで、蓄熱層28、29を設けたときにおける作用・効果を図4などを用いて説明する。図4の(a)において、縦軸は印加するパルス順方向の電流値(mA)、横軸は時間(t)を示していて、Wは電流波形、tmは印加時間を示している。
パルス点灯を行う場合は、LED素子の通常の連続点灯を行う定格電流に対して5〜50倍の電流を印加する。例えば、通常の定格電流が20mAとすれば、印加する電流値は5倍では100mA、50倍では1Aとなる。
また、印加時間tmは1〜1000msの範囲で、印加電流値との関わりを持って適宜に設定される。例えば、印加電流値が低いときは印加時間は長目に、印加電流値が高いときは印加時間は短目に設定することが可能である。
次に、図4の(b)において、縦軸は発熱温度(°C)、横軸は時間(t)を示していて、実線で示したAは蓄熱層を設けた場合におけるLED素子の発熱温度の変動カーブ、鎖線で示したBは蓄熱層を設けなかった場合におけるLED素子の発熱温度の変動カーブを示している。いずれも模式的に表している。
Here, the operation and effect when the heat storage layers 28 and 29 are provided will be described with reference to FIG. In FIG. 4A, the vertical axis represents the current value (mA) in the applied pulse forward direction, the horizontal axis represents time (t), W represents the current waveform, and tm represents the application time.
In the case of performing pulse lighting, a current that is 5 to 50 times higher than the rated current for performing normal continuous lighting of the LED element is applied. For example, if the normal rated current is 20 mA, the applied current value is 100 mA at 5 times and 1 A at 50 times.
Further, the application time tm is appropriately set in the range of 1 to 1000 ms with relation to the applied current value. For example, the application time can be set to be long when the applied current value is low, and the application time can be set to be short when the applied current value is high.
Next, in FIG. 4B, the vertical axis indicates the heat generation temperature (° C), the horizontal axis indicates time (t), and A indicated by the solid line indicates the heat generation of the LED element when the heat storage layer is provided. A temperature variation curve, B indicated by a chain line, indicates a variation curve of the heat generation temperature of the LED element when no heat storage layer is provided. Both are schematically shown.

図4の(b)において、鎖線で示したBの蓄熱層を設けなかった場合は、t1の時間にパルス電流を印加すると発熱温度は急激に上昇し、やがては上昇カーブは緩やかとなる。これは、一対の電極に熱が伝導し始めて放熱が行われることにより上昇カーブは緩やかになるものと推量される。そして、印加時間tmが終えるとカーブは下降状態に入って温度は下がってくる。
これに対して、実線で示したAの蓄熱層を設けた場合は、最初は急激な温度上昇は見られるが、途中でその上昇もピークを迎え、印加時間tm中に下降状態に入る。そして、印加時間tmが終えても下降を続け、比較的短い時間内で印加前の温度に復帰する。これは、一対の電極に熱が伝導し始めるまでの温度の上昇カーブはBのカーブと同じであるが、一対の電極に伝導し始めてから電極→蓄熱層へと熱が伝導して蓄熱層に熱が継続的に取り込まれていくことから温度カーブは印加時間tm中に上昇状態から下降状態に変化するものと推量される。
図4の(b)から分かるように、蓄熱層があることによって、それもLED素子の近くにあることによってLED素子の発熱温度は抑制され、そして、点灯後においても早い時間内で点灯前の元の温度に復帰する。
In FIG. 4B, when the B heat storage layer indicated by the chain line is not provided, when the pulse current is applied at the time t1, the heat generation temperature rises rapidly, and the rising curve gradually becomes gentle. This is presumed that the rising curve becomes gentle as heat begins to be conducted to the pair of electrodes and heat is released. When the application time tm ends, the curve enters a descending state and the temperature decreases.
On the other hand, when the A heat storage layer indicated by the solid line is provided, a rapid temperature rise is initially observed, but the rise also reaches a peak in the middle and enters a lowered state during the application time tm. And even if the application time tm is over, it continues to fall and returns to the temperature before application within a relatively short time. The temperature rise curve until heat begins to be conducted to the pair of electrodes is the same as that of B, but after conducting to the pair of electrodes, the heat is conducted from the electrode to the heat storage layer to the heat storage layer. Since heat is continuously taken in, it is estimated that the temperature curve changes from the rising state to the falling state during the application time tm.
As can be seen from (b) of FIG. 4, the presence of the heat storage layer suppresses the heat generation temperature of the LED element by being in the vicinity of the LED element. Return to the original temperature.

以上のことから本発明の作用・効果として次のことが云える。LED素子25から発生した熱は一対の電極22、23の上面部22a、23aに伝わって上面部22a、23aから側面部22b、23b、下面部22c、23cへと伝導して逃げていく。また、上面部22a、23aに伝わった熱は蓄熱層28、29に熱が取り込まれて蓄熱層28、29に熱が溜まる。
一対の電極22、23の面積は上記で述べたように可能な限り広くし、また、蓄熱層28、29の体積量も可能な限り大きく設定している。しかも、LED素子25からは最も近い距離の位置にある封止樹脂層27の回りに設けている。このため、LED素子25から発生した熱は広い面積の一対の電極22、23の上面部22a、23aに早いスピードで拡散して伝わり、更に、上面部22a、23a上にある蓄熱層28、29に早い時間に熱が取り込まれて蓄熱層28、29に熱が溜まって蓄熱されていく。
つまり、LED素子25から発生した熱は早いスピードで継続的に蓄熱層28、29に取り込まれていくのでLED素子25における熱の上昇は抑制されて高い発光輝度が得られるようになる。
From the above, the following can be said as the operation and effect of the present invention. The heat generated from the LED element 25 is transmitted to the upper surface portions 22a and 23a of the pair of electrodes 22 and 23 and is conducted from the upper surface portions 22a and 23a to the side surface portions 22b and 23b and the lower surface portions 22c and 23c and escapes. Further, the heat transmitted to the upper surface portions 22 a and 23 a is taken into the heat storage layers 28 and 29, and heat is accumulated in the heat storage layers 28 and 29.
The area of the pair of electrodes 22 and 23 is as large as possible as described above, and the volume of the heat storage layers 28 and 29 is set as large as possible. Moreover, it is provided around the sealing resin layer 27 located at a position closest to the LED element 25. Therefore, the heat generated from the LED element 25 is diffused and transmitted to the upper surface portions 22a and 23a of the pair of electrodes 22 and 23 having a large area at a high speed, and further, the heat storage layers 28 and 29 on the upper surface portions 22a and 23a. Heat is taken in at an earlier time, and heat is accumulated in the heat storage layers 28 and 29 to be stored.
That is, since the heat generated from the LED element 25 is continuously taken into the heat storage layers 28 and 29 at a high speed, an increase in heat in the LED element 25 is suppressed and a high light emission luminance can be obtained.

カメラのフラッシュ点灯は不規則な時間間隔で断続的に行われるのが一般的である。蓄熱層28、29に溜まった熱はこの断続的な時間間隔の中で電極22、23に伝導され、そして放熱されていく。そして、蓄熱層28、29の熱の溜まりも消滅する。   The flash lighting of the camera is generally performed intermittently at irregular time intervals. The heat accumulated in the heat storage layers 28 and 29 is conducted to the electrodes 22 and 23 and dissipated in this intermittent time interval. And the heat accumulation of the heat storage layers 28 and 29 also disappears.

次に、31はアクリル樹脂などで形成したカバーである。カバー31はキャップ形状をなしていて、頭部31aと筒部31bを有している。そして、LED素子25と対向する位置にある頭部31aには光学レンズ31dを設けている。第1実施形態においては、光学レンズ31dを通過する光を平行光に変換するためにフレネルレンズを形成している。
フレネルレンズを通過する光は分散光が少なくなり、平行光が多くなる。このため、多くの光量が平行光になって被写体に向かって出射する。そして、被写体に当たる光量が増えて明るく照明するようになる。
Next, 31 is a cover formed of acrylic resin or the like. The cover 31 has a cap shape and has a head portion 31a and a cylindrical portion 31b. An optical lens 31d is provided on the head portion 31a that faces the LED element 25. In the first embodiment, a Fresnel lens is formed to convert light passing through the optical lens 31d into parallel light.
The light passing through the Fresnel lens has less dispersed light and more parallel light. For this reason, a large amount of light becomes parallel light and is emitted toward the subject. Then, the amount of light hitting the subject increases and the illumination is brighter.

また、カバー31は筒部31bの先端を回路基板24の外周縁部にUV硬化型のアクリル樹脂などの樹脂接着剤を介して接着固定することによって回路基板24にカバー31が取付けられる。レジスト膜30の平坦面によってカバー31の落着き状態も良くなり、強固な接着固定力が確保される。   The cover 31 is attached to the circuit board 24 by bonding and fixing the tip of the cylindrical part 31b to the outer peripheral edge of the circuit board 24 with a resin adhesive such as UV curable acrylic resin. The flat surface of the resist film 30 improves the settled state of the cover 31 and secures a strong adhesive fixing force.

カバー31を取付けた状態で、カバー31と封止樹脂層27や蓄熱層28、29との間に隙間(中空部)31cを設けている。この隙間31cを設けることで光学レンズ31aに対する封止樹脂層27や蓄熱層28、29からの熱の影響を小さくしている。隙間31cには空気が存在するが、空気の熱伝導率は0.03W/m・Kと非常に小さい。このため、蓄熱層28、29に溜まった熱はカバー31には殆ど伝わらない。光学レンズ31aは熱に影響受けずに、レンズ形状などの初期品質がそのまま保持できる。また、隙間31cを有することで光に屈折が生じて分散光が増え、発光色の混色が良く行われるようになる。   With the cover 31 attached, a gap (hollow part) 31c is provided between the cover 31 and the sealing resin layer 27 and the heat storage layers 28 and 29. By providing the gap 31c, the influence of heat from the sealing resin layer 27 and the heat storage layers 28 and 29 on the optical lens 31a is reduced. Although air exists in the gap 31c, the thermal conductivity of air is as small as 0.03 W / m · K. For this reason, the heat accumulated in the heat storage layers 28 and 29 is hardly transmitted to the cover 31. The optical lens 31a is not affected by heat and can retain the initial quality such as the lens shape. Further, since the gap 31c is provided, the light is refracted, the dispersed light is increased, and the light emission colors are mixed well.

101は一対のピンコンタクトである。発光装置を組付けるカメラの筐体(本体)内に設けられているもので、この一対のピンコンタクト101と発光装置20が接触して導通接続が取られる。一対のピンコンタクト101の内、一方のピンコンタクト101からアノード側の電極22にパルス順方向電流が流れ、そして、LED素子25に流れてLED素子25がパルス点灯する。また、LED素子25からカソード側の電極23に電流が流れ、電極23と接触する他方のピンコンタクト101に電流が流れるようになっている。   Reference numeral 101 denotes a pair of pin contacts. A pair of pin contacts 101 and the light emitting device 20 are brought into contact with each other to establish a conductive connection. Of the pair of pin contacts 101, a pulse forward current flows from one pin contact 101 to the anode-side electrode 22, and then flows to the LED element 25, and the LED element 25 is pulsed. In addition, a current flows from the LED element 25 to the cathode-side electrode 23, and a current flows to the other pin contact 101 in contact with the electrode 23.

第1実施形態でのピンコンタクト101は真鍮材に金メッキなどを施したものであり、導電性にも優れ、熱伝導率も高い。ピンコンタクトと接触して導通接続を図る構造はこのピンコンタクトにも熱が伝導し、放熱が早く行われるようになる。このため、各種の電子部品を装着したマザーボードに対して熱の影響を最小限に抑えることができる。
また、ピンコンタクトを介して導通接続する構造は狭いスペースで発光装置の取付けが可能になる。部品密集度の高い筐体において好適な取付け構造と云える。
The pin contact 101 in the first embodiment is a brass material plated with gold or the like, and has excellent conductivity and high thermal conductivity. In the structure in which conductive connection is made by contacting the pin contact, heat is also conducted to the pin contact, and heat dissipation is performed quickly. For this reason, it is possible to minimize the influence of heat on the motherboard on which various electronic components are mounted.
In addition, the structure in which the conductive connection is made via the pin contact enables the light emitting device to be mounted in a narrow space. It can be said that the mounting structure is suitable for a case having a high density of parts.

以上の構成を取ることにより、高電流のパルス点灯時においては発熱を低く抑えることができて輝度の高い明るい照明を得ることができる。また、蓄熱層も容易に形成できるので製作コストも安く抑えることができる。また、蓄熱層がカバーの内部に納まっているので発光装置自体がコンパクトな形状に仕上げられる。   By adopting the above configuration, heat generation can be suppressed low during high-current pulse lighting, and bright illumination with high luminance can be obtained. In addition, since the heat storage layer can be easily formed, the manufacturing cost can be reduced. Further, since the heat storage layer is housed in the cover, the light emitting device itself is finished in a compact shape.

なお、第1実施形態はLED素子を1個用いたもので説明したが、LED素子は1個に限るものではない。輝度を高めるために複数個用いても構わない。また、赤色発光、緑色発光、青色発光のR、G、Bの3種類のLED素子を配設して白色光を得る構成を取っても良いものである。   The first embodiment has been described using one LED element, but the number of LED elements is not limited to one. A plurality of them may be used to increase the luminance. Further, it is also possible to adopt a configuration in which white light is obtained by arranging three types of LED elements of red light emission, green light emission, and blue light emission R, G, and B.

また、蓄熱層28、29は一対設けたが、これは導電性を有する半田で形成したことによる。絶縁性があって熱伝導率の高い材料であるならば蓄熱層は繋げて1つにしても構わない。   In addition, a pair of heat storage layers 28 and 29 are provided because they are formed of conductive solder. If the material has an insulating property and a high thermal conductivity, the heat storage layers may be connected to one.

また、光学レンズ31dは、第1実施形態においては、フレネルレンズ構造のものを用いているが、特にフレネルレンズに限るものではなく、集光機能を持つ凸レンズ、凹レンズ、あるいはこれらのレンズのアレイ構造のものにしたものでも適用可能である。   In the first embodiment, the optical lens 31d has a Fresnel lens structure. However, the optical lens 31d is not limited to a Fresnel lens, and is not limited to a Fresnel lens. A convex lens having a condensing function, a concave lens, or an array structure of these lenses is used. It can be applied even if it is made in the same way.

(第2実施形態)
次に、本発明の第2実施形態に係る発光装置について図5、図6を用いて説明する。なお、図5は本発明の第2実施形態に係る発光装置の要部断面図、図6は図5における発光装置のカバーを取り除いて見たときの平面図を示している。また、図5、図6において、前述の第1実施形態での構成部品と同じ仕様をなす構成部品は同一符号を付して説明する。
(Second Embodiment)
Next, a light emitting device according to a second embodiment of the present invention will be described with reference to FIGS. 5 is a cross-sectional view of a main part of the light emitting device according to the second embodiment of the present invention, and FIG. 6 is a plan view of the light emitting device in FIG. 5 with the cover removed. In FIG. 5 and FIG. 6, components having the same specifications as the components in the first embodiment will be described with the same reference numerals.

第2実施形態の発光装置と前述の第1実施形態の発光装置を対比すると、第2実施形態の発光装置はLED素子を2個用いていること、カバーに反射膜を設けていること、の2点が前述の第1実施系の発光装置と大きく異なる。以下、構成の異なる所を主体にして説明する。   Comparing the light emitting device of the second embodiment with the light emitting device of the first embodiment described above, the light emitting device of the second embodiment uses two LED elements, and the reflective film is provided on the cover. Two points are greatly different from the light emitting device of the first embodiment. In the following, description will be made mainly on the different configuration.

第2実施形態での発光装置40は、図6に示すように、LED素子を2個用いている。1個目のLED素子25は前述の第1実施形態で用いたLED素子と同じ仕様の青色発光のLED素子である。2個目のLED素子45は赤色発光のLED素子である。LED素子25とLED素子45が並列をなして電極23の上面部23aに取付けられている。そして、LED素子45はボンディングワイヤ26を介して電極22の上面部22aと接続している。   The light emitting device 40 in the second embodiment uses two LED elements as shown in FIG. The first LED element 25 is a blue light emitting LED element having the same specifications as the LED element used in the first embodiment. The second LED element 45 is a red light emitting LED element. The LED element 25 and the LED element 45 are attached to the upper surface portion 23a of the electrode 23 in parallel. The LED element 45 is connected to the upper surface portion 22 a of the electrode 22 through the bonding wire 26.

封止樹脂層27は前述の第1実施形態における封止樹脂層と同じ仕様をなす。即ち、シリコーン系樹脂にYAL12:Ceなる化学式を持つYAG系蛍光体を5〜60重量%の割合で配合したものからなる。
この蛍光体は青色発光をなすLED素子25の短波長の光に蛍光体が励起されて波長変換されて黄色の発光色が得られる。そして、LED25からの青色発光色と混色して白色光が得られる。
しかしながら、この白色光は僅かに青味成分を持った白色光であるので、第2実施形態においては、赤色発光のLED素子45をLED素子25と一緒に搭載して、LED素子45からの赤色成分の光を混色させている。そして、青味成分の発色を消し、白色度の高い白色光が得られるようにしている。
このような構成を取ることにより、演色性の向上や色再現性の向上などの効果が得られる。
The sealing resin layer 27 has the same specifications as the sealing resin layer in the first embodiment described above. That is, it consists of a silicone resin blended with a YAG phosphor having a chemical formula of Y 3 AL 5 O 12 : Ce in a proportion of 5 to 60% by weight.
The phosphor is excited by the short wavelength light of the LED element 25 that emits blue light, and the wavelength is converted to obtain a yellow emission color. And it mixes with the blue luminescent color from LED25, and white light is obtained.
However, since the white light is white light having a slight bluish component, in the second embodiment, the red light emitting LED element 45 is mounted together with the LED element 25, and the red light from the LED element 45 is mounted. The component light is mixed. Then, the color development of the bluish component is eliminated, and white light with high whiteness is obtained.
By adopting such a configuration, effects such as improved color rendering and improved color reproducibility can be obtained.

一対の蓄熱層28、29は前述の第1実施形態における蓄熱層と同じ仕様をなす。即ち、半田でもって形成し、封止樹脂層27の外周回りに設けている。   The pair of heat storage layers 28 and 29 have the same specifications as the heat storage layer in the first embodiment described above. That is, it is formed with solder and is provided around the outer periphery of the sealing resin layer 27.

第2実施形態のカバー51は、前述の第1実施形態で構成したカバーと同じ仕様のカバー31を用い、カバー31の筒部31bの内周面に反射膜51eを設けたものである。反射膜51eはAlやAg金属などの金属膜からなり、真空蒸着法やスパッタリング法などの方法で形成する。
筒部31bの内周面に反射膜51eを設けることで、内周面に入射したLED素子25、45からの光は反射膜51eによって反射され、その反射光が光学レンズ31dの方向に、あるいは隙間31c内に向かって進む。このように、反射膜51dを設けることによって光学レンズ31dを通過する光量が多くなって光の利用効率は高められる。そして、輝度の高い明るい照明が得られるようになる。
The cover 51 of the second embodiment uses a cover 31 having the same specifications as the cover configured in the first embodiment, and is provided with a reflective film 51e on the inner peripheral surface of the cylindrical portion 31b of the cover 31. The reflective film 51e is made of a metal film such as Al or Ag metal, and is formed by a method such as a vacuum deposition method or a sputtering method.
By providing the reflective film 51e on the inner peripheral surface of the cylindrical portion 31b, the light from the LED elements 25 and 45 incident on the inner peripheral surface is reflected by the reflective film 51e, and the reflected light is directed toward the optical lens 31d or Proceed toward the gap 31c. Thus, by providing the reflective film 51d, the amount of light passing through the optical lens 31d is increased, and the light use efficiency is increased. And bright illumination with high luminance can be obtained.

以上の構成をなすことにより、前述の第1実施形態の発光装置で説明した放熱効果の外に、白色度が高められた白色光が得られ、演色性や色再現性の向上がもたらされる。また、より明るさの明るい照明が得られる。   With the above configuration, in addition to the heat dissipation effect described in the light emitting device of the first embodiment, white light with increased whiteness is obtained, and color rendering and color reproducibility are improved. In addition, brighter illumination can be obtained.

(第3実施形態)
次に、本発明の第3実施形態に係る発光装置について図7、図8を用いて説明する。なお、図7は本発明の第3実施形態に係る発光装置の要部断面図、図8は図7における発光装置のカバーを取り除いて見たときの平面図を示している。また、図7、図8において、前述の第1実施形態での構成部品と同じ仕様をなす構成部品は同一符号を付して説明する。
(Third embodiment)
Next, a light emitting device according to a third embodiment of the invention will be described with reference to FIGS. 7 is a cross-sectional view of the main part of the light emitting device according to the third embodiment of the present invention, and FIG. 8 is a plan view of the light emitting device in FIG. 7 with the cover removed. In FIG. 7 and FIG. 8, components having the same specifications as the components in the first embodiment will be described with the same reference numerals.

最初に、第3実施形態の発光装置の構成と前述の第1実施形態の発光装置の構成の大きな相違点を図7を用いて説明する。
相違点の第1点目は、一対の電極62、63を台座61上に設けた台座基板64を新たに設け、この台座基板64上に前述の第1実施形態の回路基板24を搭載する構成をなしている点である。
First, significant differences between the configuration of the light emitting device of the third embodiment and the configuration of the light emitting device of the first embodiment will be described with reference to FIG.
The first difference is that a pedestal substrate 64 in which a pair of electrodes 62 and 63 are provided on a pedestal 61 is newly provided, and the circuit board 24 of the first embodiment is mounted on the pedestal substrate 64. It is a point that has made.

次に、相違点の第2点目は、一対の蓄熱層68、69を回路基板24の外周回りにあって回路基板24の一対の電極22、23及び台座基板64の一対の電極62、63とそれぞれ接触して設けた構成をなしている点である。
一対の蓄熱層68、69は半田から形成しており、この一対の蓄熱層68、69は回路基板24と台座基板64を固定する働きもなしている。なお、図示はしていないが、回路基板24の一対の電極22、23と台座基板64の一対の電極62、33の接触面(図7において、電極22と電極62との接触面、及び、電極23と電極63との接触面)にも半田が設けられて接合している。
前述の第1実施形態においては、蓄熱層は回路基板上の封止樹脂層の外周回りに配設した構成をなしたが、第3実施形態においては、封止樹脂層の外周回りではなく回路基板の外周回りに設けた構成を取っている。
Next, the second difference is that the pair of heat storage layers 68 and 69 are provided around the outer periphery of the circuit board 24, and the pair of electrodes 22 and 23 of the circuit board 24 and the pair of electrodes 62 and 63 of the base board 64. It is the point which has comprised with each, and it has comprised.
The pair of heat storage layers 68 and 69 are made of solder, and the pair of heat storage layers 68 and 69 also serve to fix the circuit board 24 and the base board 64. Although not shown, the contact surfaces of the pair of electrodes 22 and 23 of the circuit board 24 and the pair of electrodes 62 and 33 of the base substrate 64 (in FIG. 7, the contact surfaces of the electrodes 22 and 62, and The contact surface between the electrode 23 and the electrode 63 is also provided with solder.
In the first embodiment described above, the heat storage layer is arranged around the outer periphery of the sealing resin layer on the circuit board. However, in the third embodiment, the circuit is not around the outer periphery of the sealing resin layer. The structure provided around the outer periphery of the substrate is taken.

次に、相違点の第3点目は、カバー71を台座基板64の外周縁部に取付けた構成をなしている点である。そして、そのカバー71には筒部71bの内周面と頭部71aの内面の一部分に反射膜71eを設けた構成にしている点である。   Next, the third difference is that the cover 71 is attached to the outer peripheral edge of the base substrate 64. The cover 71 has a configuration in which a reflective film 71e is provided on a part of the inner peripheral surface of the cylindrical portion 71b and the inner surface of the head portion 71a.

以下、相異するところの構成の部品仕様を説明する。台座基板64を構成するところの台座61はカラスエポキシ樹脂やBTレジンなどの樹脂からなり、平坦面を有する平板を用いている。
台座61に形成する一対の電極62、63は電気抵抗率が低く、且つ、熱伝導率の高いCu、Al、Ag、Au金属などの金属材料を用いて形成している。第3実施形態においては、回路基板24の一対の電極22、23と同じ材料のものを用いている。一対の電極62、63は台座61の上面、側面(スルホール面)、下面と繋がって設けており、幅も広く取って回路基板24の一対の電極22、23の幅と同じ幅に形成している。
Hereinafter, the component specifications of the different configurations will be described. The pedestal 61 constituting the pedestal substrate 64 is made of a resin such as crow epoxy resin or BT resin, and uses a flat plate having a flat surface.
The pair of electrodes 62 and 63 formed on the pedestal 61 are formed using a metal material such as Cu, Al, Ag, or Au metal having low electrical resistivity and high thermal conductivity. In the third embodiment, the same material as the pair of electrodes 22 and 23 of the circuit board 24 is used. The pair of electrodes 62 and 63 are connected to the upper surface, side surface (through hole surface), and lower surface of the pedestal 61, and are formed to have the same width as the pair of electrodes 22 and 23 of the circuit board 24. Yes.

回路基板24を構成する基板21と一対の電極22、23は前述の第1実施形態の部品仕様と同じであるので説明は省略する。
また、LED素子25、ボンディングワイヤ26も同様である。
The circuit board 24 and the pair of electrodes 22 and 23 constituting the circuit board 24 are the same as the component specifications of the first embodiment, and the description thereof is omitted.
The same applies to the LED element 25 and the bonding wire 26.

封止樹脂層67は第1実施形態での封止樹脂層と同様にシリコーン系樹脂にYAG系蛍光体を含有したものからなるが、第3実施形態においては、回路基板24の上面全面に設けている。回路基板24の一対の電極22、23の露出面積を少なくしての防蝕効果、蛍光体での波長変換光量を多くする効果などを図っている。   The sealing resin layer 67 is made of a silicone resin containing a YAG phosphor similarly to the sealing resin layer in the first embodiment. In the third embodiment, the sealing resin layer 67 is provided on the entire upper surface of the circuit board 24. ing. The anti-corrosion effect by reducing the exposed area of the pair of electrodes 22 and 23 of the circuit board 24, the effect of increasing the amount of wavelength-converted light in the phosphor, and the like are achieved.

一対の蓄熱層68、69は半田でもって形成している。回路基板24の外周回りに設けることで、蓄熱層68、69の厚みを厚くすることができ、蓄熱層68、69の体積を大きくすることができる。前述の第1実施形態で説明したことではあるが、蓄熱層はLED素子から発生した熱を取り込んで一次的に溜める役割をなす。蓄熱層の体積が大きくなればなるほど取り込んで溜める熱量は多くできる。そして、これによってLED素子の放熱スピードも速められてLED素子の温度上昇が抑制される。
前述の第1実施形態での蓄熱層は回路基板上に設けた構成をなす。蓄熱層を回路基板上に設ける構成は蓄熱層の厚みを余り厚くすることができないので体積に限度を有する。しかしながら、回路基板の外周回りに設ける構成は所望の厚みに形成することが可能になるので、余裕をもった体積にすることができる。
The pair of heat storage layers 68 and 69 are formed with solder. By providing around the outer periphery of the circuit board 24, the thickness of the heat storage layers 68 and 69 can be increased, and the volume of the heat storage layers 68 and 69 can be increased. As described in the first embodiment, the heat storage layer takes in the heat generated from the LED elements and temporarily stores the heat. The greater the volume of the heat storage layer, the greater the amount of heat that can be captured and stored. As a result, the heat dissipation speed of the LED element is also increased, and the temperature rise of the LED element is suppressed.
The heat storage layer in the first embodiment described above is provided on the circuit board. The configuration in which the heat storage layer is provided on the circuit board has a limit in volume because the heat storage layer cannot be made too thick. However, since the configuration provided around the outer periphery of the circuit board can be formed in a desired thickness, the volume can be increased.

図7において、70はレジスト膜である。このレジスト膜70はスルホール面を塞ぎ、蓄熱層68、69の半田が流れ込まないようにすると共に、カバー71取付けの落着き状態を良くするために設けている。   In FIG. 7, reference numeral 70 denotes a resist film. The resist film 70 is provided to block the through hole surface, prevent the solder of the heat storage layers 68 and 69 from flowing in, and improve the state of attachment of the cover 71.

カバー71は透明なアクリル樹脂などからなる。頭部71aと筒部71bを有し、頭部71aには光学レンズ71dを設けている。なお、この光学レンズ71dはフレネルレンズからなっている。
また、カバー71は筒部71bの内周面と頭部71aの一部分の面(光学レンズ71d面を除いた面)に反射膜71eを設けている。カバー71の筒部71bから光が漏れないようにして光の利用効率を高め、光学レンズ71dの面から多くの光量が出射して輝度を高めるようにしている。
カバー71は台座基板64の外周縁部に固定するが、固定した状態において、蓄熱層68、69や封止樹脂層67とカバー71との間に隙間(中空部)71cが設けられている。この隙間71cがあることでカバー71に熱が余り伝わらず、光学レンズの熱変形が防止できる。また、光の屈折が生まれて光が分散するので混色が良く行われるようになる。
The cover 71 is made of a transparent acrylic resin or the like. A head 71a and a cylinder 71b are provided, and an optical lens 71d is provided on the head 71a. The optical lens 71d is a Fresnel lens.
The cover 71 is provided with a reflective film 71e on the inner peripheral surface of the cylindrical portion 71b and a part of the head 71a (a surface excluding the surface of the optical lens 71d). The light use efficiency is increased by preventing light from leaking from the cylindrical portion 71b of the cover 71, and a large amount of light is emitted from the surface of the optical lens 71d to increase the luminance.
The cover 71 is fixed to the outer peripheral edge of the base substrate 64. In the fixed state, a gap (hollow part) 71c is provided between the heat storage layers 68 and 69 and the sealing resin layer 67 and the cover 71. The clearance 71c prevents heat from being transmitted to the cover 71 so much that the optical lens can be prevented from being thermally deformed. In addition, since light is refracted and light is dispersed, color mixing is performed well.

以上の構成をなすことにより、蓄熱層68、69の体積を大きくできること、台座基板64の一対の電極62、63の面積も加わって熱伝導媒体の面積が大きくなること、などによってよりLED素子25の温度上昇を抑制することができる。
また、図示はしていないが、この発光装置60は筐体側に配設した一対のピンコンタクトと接触し、導通接続が取られて駆動が行われる。
With the above configuration, the volume of the heat storage layers 68 and 69 can be increased, the area of the heat transfer medium can be increased by adding the area of the pair of electrodes 62 and 63 of the base substrate 64, and the like. Temperature rise can be suppressed.
Although not shown, the light emitting device 60 comes into contact with a pair of pin contacts disposed on the housing side, and is connected to be connected to be driven.

また、上記の構成は、回路基板24の外周回りに設けた一対の蓄熱層68、69は、図8に示すように、回路基板24の左右の両側に設けた構成を取っているが、次の応用例の如く、回路基板24の外周回りに蓄熱層の形成領域を増やした構成を取ることも可能である。   In the above configuration, the pair of heat storage layers 68 and 69 provided around the outer periphery of the circuit board 24 are provided on both the left and right sides of the circuit board 24 as shown in FIG. It is also possible to adopt a configuration in which the heat storage layer forming region is increased around the outer periphery of the circuit board 24 as in the application example.

(応用例)
図9に示すものは、回路基板の外周回りに設ける蓄熱層を領域を増やして設けた応用例で、図中において回路基板24の左右の両側と上下側にも広がって一対の蓄熱層68、69を設けた構成をなしている。
これは、台座基板64の一対の電極62、63の幅を広く取ることによってこの構成の蓄熱層68、39を形成することができる。
この構成は、蓄熱層68、69の体積も増え、また、台座61に設ける一対の電極62、63の面積も増えることになるのでその効果は一層促進されることになる。
(Application examples)
The example shown in FIG. 9 is an application example in which the heat storage layer provided around the outer periphery of the circuit board is provided with an increased area. In the figure, the heat storage layer 68 extends to both the left and right sides and the upper and lower sides of the circuit board 24 in a pair. 69 is provided.
This is because the heat storage layers 68 and 39 having this configuration can be formed by widening the pair of electrodes 62 and 63 of the base substrate 64.
In this configuration, the volume of the heat storage layers 68 and 69 is increased and the area of the pair of electrodes 62 and 63 provided on the pedestal 61 is also increased, so that the effect is further promoted.

本発明の第1実施形態に係る発光装置の要部断面図である。It is principal part sectional drawing of the light-emitting device which concerns on 1st Embodiment of this invention. 図1における発光装置のカバーを取り除いて見たときの平面図である。It is a top view when the cover of the light-emitting device in FIG. 1 is removed. 図1における回路基板の斜視図である。It is a perspective view of the circuit board in FIG. 図1における蓄熱層の作用・効果を説明する説明図で、図4の(a)は印加するパルス波形図、図4の(b)はLED素子の発熱温度の変動を模式的に示した変動曲線図である。4A and 4B are explanatory diagrams for explaining the operation and effect of the heat storage layer, in which FIG. 4A is a pulse waveform diagram to be applied, and FIG. 4B is a fluctuation schematically showing fluctuations in heat generation temperature of the LED element. FIG. 本発明の第2実施形態に係る発光装置の要部断面図である。It is principal part sectional drawing of the light-emitting device which concerns on 2nd Embodiment of this invention. 図5における発光装置のカバーを取り除いて見たときの平面図である。It is a top view when the cover of the light-emitting device in FIG. 5 is removed and viewed. 本発明の第3実施形態に係る発光装置の要部断面図である。It is principal part sectional drawing of the light-emitting device which concerns on 3rd Embodiment of this invention. 図7における発光装置のカバーを取り除いて見たときの平面図である。It is a top view when the cover of the light-emitting device in FIG. 7 is removed. 第3実施形態に係る発光装置の蓄熱層の構成の応用例を示す平面図である。It is a top view which shows the application example of the structure of the thermal storage layer of the light-emitting device which concerns on 3rd Embodiment. 特許文献1に示された発光ダイオードの要部断面図である。It is principal part sectional drawing of the light emitting diode shown by patent document 1. FIG. 特許文献2に示された表面実装型発光ダイオードの要部断面図である。It is principal part sectional drawing of the surface mount type light emitting diode shown by patent document 2. FIG.

符号の説明Explanation of symbols

20、40、60 発光装置
21 基板
22、23、62、63 電極
22a、23a 上面部
22b、23b 側面部
22c、23c 下面部
24 回路基板
25、45 LED素子
26 ボンディングワイヤ
27、67封止樹脂層
28、29、68、69 蓄熱層
30、70 レジスト膜
31、51、71 カバー
31a、71a 頭部
31b、71b 筒部
31c、71c 隙間
31d、71d 光学レンズ
51e、71e 反射膜
61 台座
64 台座基板
101 ピンコンタクト
20, 40, 60 Light emitting device 21 Substrate 22, 23, 62, 63 Electrode 22a, 23a Upper surface portion 22b, 23b Side surface portion 22c, 23c Lower surface portion 24 Circuit substrate 25, 45 LED element 26 Bonding wire 27, 67 Sealing resin layer 28, 29, 68, 69 Thermal storage layer 30, 70 Resist film 31, 51, 71 Cover 31a, 71a Head part 31b, 71b Cylinder part 31c, 71c Gap 31d, 71d Optical lens 51e, 71e Reflective film 61 Base 64 Base substrate 101 Pin contact

Claims (10)

LED素子を用いた発光装置であって、前記発光装置は絶縁性の基板に一対の電極を設けた回路基板と、該回路基板上に少なくとも1個を搭載したLED素子と、該LED素子を樹脂で封止した封止樹脂層と、該封止樹脂層の外周回りにあって前記一対の電極の一部分とそれぞれ接触して前記LED素子から発生した熱を取り込んで一次的に溜める蓄熱層と、を有することを特徴とする発光装置。   A light-emitting device using an LED element, wherein the light-emitting device is a circuit board in which a pair of electrodes is provided on an insulating substrate, at least one LED element mounted on the circuit board, and the LED element is a resin A sealing resin layer sealed with, and a heat storage layer around the outer periphery of the sealing resin layer and in contact with a part of the pair of electrodes to take in heat generated from the LED element and temporarily store the heat, A light emitting device comprising: LED素子を用いた発光装置であって、前記発光装置は絶縁性の基板に一対の電極を設けた回路基板と、該回路基板上に少なくとも1個を搭載したLED素子と、該LED素子を樹脂で封止した封止樹脂層と、絶縁性の台座に一対の電極を設けて前記回路基板を搭載する台座基板と、前記回路基板の外周回りにあって前記回路基板の前記一対の電極及び前記台座基板の前記一対の電極の一部分とそれぞれ接触して前記LED素子からの発生した熱を取り込んで一次的に溜める蓄熱層と、を有することを特徴とする発光装置。   A light-emitting device using an LED element, wherein the light-emitting device is a circuit board in which a pair of electrodes is provided on an insulating substrate, at least one LED element mounted on the circuit board, and the LED element is a resin A sealing resin layer sealed in step 1, a base board on which an insulating base is provided with a pair of electrodes to mount the circuit board, the pair of electrodes on the circuit board around the outer periphery of the circuit board, and the circuit board A light-emitting device comprising: a heat storage layer that comes into contact with a part of the pair of electrodes of the base substrate and takes in heat generated from the LED elements and temporarily stores the heat storage layer. 前記発光装置には光学レンズを設けたキャップ形状の透過性のカバーを有することを特徴とする請求項1又は2に記載の発光装置。   The light-emitting device according to claim 1, wherein the light-emitting device has a cap-shaped transmissive cover provided with an optical lens. 前記カバーのキャップ形状は頭部と筒部からなり、前記頭部に前記光学レンズが設けられており、前記封止樹脂層と前記蓄熱層は前記筒部の内部に配置されていて、前記封止樹脂層及び前記蓄熱層と前記カバーとの間には隙間を有することを特徴とする請求項1乃至3のいずれかに記載の発光装置。   The cap shape of the cover includes a head portion and a cylinder portion, the optical lens is provided on the head portion, the sealing resin layer and the heat storage layer are disposed inside the cylinder portion, and the sealing The light emitting device according to any one of claims 1 to 3, wherein a gap is provided between the stop resin layer and the heat storage layer and the cover. 前記カバーの前記筒部の内周面には反射膜を設けていることを特徴とする請求項4に記載の発光装置。   The light-emitting device according to claim 4, wherein a reflective film is provided on an inner peripheral surface of the cylindrical portion of the cover. 前記カバーの光学レンズはフレネルレンズであることを特徴とする請求項3又は4に記載の発光装置。   5. The light emitting device according to claim 3, wherein the optical lens of the cover is a Fresnel lens. 前記蓄熱層は半田からなることを特徴とする請求項1、2、4のいずれかに記載の発光装置。   The light-emitting device according to claim 1, wherein the heat storage layer is made of solder. 前記LED素子は青色発光のLED素子であり、前記封止樹脂層はシリコーン系樹脂にYAG系蛍光体が含有したものからなることを特徴とする請求項1、2、4のいずれかに記載の発光装置。   5. The LED element according to claim 1, wherein the LED element is a blue light emitting LED element, and the sealing resin layer is made of a silicone resin containing a YAG phosphor. Light emitting device. 前記LED素子は青色発光のLED素子と赤色発光のLED素子であり、前記封止樹脂層はシリコーン系樹脂にYAG系蛍光体が含有したものからなることを特徴とする請求項1、2、4のいずれかに記載の発光装置。   The LED elements are a blue light emitting LED element and a red light emitting LED element, and the sealing resin layer is made of a silicone resin containing a YAG phosphor. The light emitting device according to any one of the above. 前記請求項1乃至9のいずれかに記載の発光装置は筐体側に設けた一対のピンコンタクトと接触して該ピンコンタクトより電流の供給をうけることを特徴とする発光装置。   10. The light emitting device according to claim 1, wherein the light emitting device is in contact with a pair of pin contacts provided on the housing side and is supplied with current from the pin contacts.
JP2008202599A 2008-08-06 2008-08-06 Light emitting device Expired - Fee Related JP5139916B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008202599A JP5139916B2 (en) 2008-08-06 2008-08-06 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008202599A JP5139916B2 (en) 2008-08-06 2008-08-06 Light emitting device

Publications (2)

Publication Number Publication Date
JP2010040802A true JP2010040802A (en) 2010-02-18
JP5139916B2 JP5139916B2 (en) 2013-02-06

Family

ID=42013028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008202599A Expired - Fee Related JP5139916B2 (en) 2008-08-06 2008-08-06 Light emitting device

Country Status (1)

Country Link
JP (1) JP5139916B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012156512A (en) * 2012-02-17 2012-08-16 Toshiba Lighting & Technology Corp Luminescent device and lighting apparatus
KR20200027510A (en) * 2017-07-21 2020-03-12 루미리즈 홀딩 비.브이. How to control a segmented flash system
US10883700B2 (en) 2018-08-31 2021-01-05 Nichia Corporation Lens, light emitting device and method of manufacturing the lens and the light emitting device
WO2021019914A1 (en) * 2019-07-30 2021-02-04 ソニーセミコンダクタソリューションズ株式会社 Semiconductor laser drive device, electronic apparatus, and method for manufacturing semiconductor laser drive device
US11640038B2 (en) 2018-08-31 2023-05-02 Nichia Corporation Lens, light emitting device and method of manufacturing the lens and the light emitting device
US11644635B2 (en) 2018-08-31 2023-05-09 Nichia Corporation Lens, light emitting device and method of manufacturing the lens and the light emitting device

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1027926A (en) * 1996-07-11 1998-01-27 Nichia Chem Ind Ltd Photo-semiconductor device
JP2003307771A (en) * 2002-02-15 2003-10-31 Fuji Photo Film Co Ltd Light emitting device for camera and semiconductor light emitting element
JP2004200207A (en) * 2002-12-16 2004-07-15 Matsushita Electric Works Ltd Light emitting device
JP2004327955A (en) * 2003-04-09 2004-11-18 Citizen Electronics Co Ltd Led lamp
JP2004342780A (en) * 2003-05-14 2004-12-02 Nichia Chem Ind Ltd Display unit and lens therefor
JP2005049152A (en) * 2003-07-31 2005-02-24 Fuji Electric Holdings Co Ltd Current detecting circuit
JP2005064047A (en) * 2003-08-13 2005-03-10 Citizen Electronics Co Ltd Light emitting diode
JP2005123477A (en) * 2003-10-17 2005-05-12 Toyoda Gosei Co Ltd Optical device
JP2006245032A (en) * 2005-02-28 2006-09-14 Toyoda Gosei Co Ltd Light emitting device and led lamp
JP2007049152A (en) * 2005-08-08 2007-02-22 Samsung Electronics Co Ltd Led package and its manufacturing method
JP2007096008A (en) * 2005-09-29 2007-04-12 Toyoda Gosei Co Ltd Package for mounting light emitting element
JP2007201028A (en) * 2006-01-24 2007-08-09 Harison Toshiba Lighting Corp Light emitting device
JP2008235867A (en) * 2007-02-22 2008-10-02 Sharp Corp Surface mount light-emitting diode and method of manufacturing the same
JP2009010049A (en) * 2007-06-26 2009-01-15 Panasonic Electric Works Co Ltd Light-emitting device

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1027926A (en) * 1996-07-11 1998-01-27 Nichia Chem Ind Ltd Photo-semiconductor device
JP2003307771A (en) * 2002-02-15 2003-10-31 Fuji Photo Film Co Ltd Light emitting device for camera and semiconductor light emitting element
JP2004200207A (en) * 2002-12-16 2004-07-15 Matsushita Electric Works Ltd Light emitting device
JP2004327955A (en) * 2003-04-09 2004-11-18 Citizen Electronics Co Ltd Led lamp
JP2004342780A (en) * 2003-05-14 2004-12-02 Nichia Chem Ind Ltd Display unit and lens therefor
JP2005049152A (en) * 2003-07-31 2005-02-24 Fuji Electric Holdings Co Ltd Current detecting circuit
JP2005064047A (en) * 2003-08-13 2005-03-10 Citizen Electronics Co Ltd Light emitting diode
JP2005123477A (en) * 2003-10-17 2005-05-12 Toyoda Gosei Co Ltd Optical device
JP2006245032A (en) * 2005-02-28 2006-09-14 Toyoda Gosei Co Ltd Light emitting device and led lamp
JP2007049152A (en) * 2005-08-08 2007-02-22 Samsung Electronics Co Ltd Led package and its manufacturing method
JP2007096008A (en) * 2005-09-29 2007-04-12 Toyoda Gosei Co Ltd Package for mounting light emitting element
JP2007201028A (en) * 2006-01-24 2007-08-09 Harison Toshiba Lighting Corp Light emitting device
JP2008235867A (en) * 2007-02-22 2008-10-02 Sharp Corp Surface mount light-emitting diode and method of manufacturing the same
JP2009010049A (en) * 2007-06-26 2009-01-15 Panasonic Electric Works Co Ltd Light-emitting device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012156512A (en) * 2012-02-17 2012-08-16 Toshiba Lighting & Technology Corp Luminescent device and lighting apparatus
KR102520632B1 (en) 2017-07-21 2023-04-12 루미리즈 홀딩 비.브이. How to Control a Segmented Flash System
KR20200027510A (en) * 2017-07-21 2020-03-12 루미리즈 홀딩 비.브이. How to control a segmented flash system
KR102712576B1 (en) 2017-07-21 2024-10-04 루미리즈 홀딩 비.브이. Method of controlling a segmented flash system
KR20230050485A (en) * 2017-07-21 2023-04-14 루미리즈 홀딩 비.브이. Method of controlling a segmented flash system
CN114253048A (en) * 2017-07-21 2022-03-29 亮锐控股有限公司 Method of controlling a segmented flash lamp system
US11644635B2 (en) 2018-08-31 2023-05-09 Nichia Corporation Lens, light emitting device and method of manufacturing the lens and the light emitting device
US20210102683A1 (en) * 2018-08-31 2021-04-08 Nichia Corporation Lens and light emitting device
US11640038B2 (en) 2018-08-31 2023-05-02 Nichia Corporation Lens, light emitting device and method of manufacturing the lens and the light emitting device
US11788708B2 (en) 2018-08-31 2023-10-17 Nichia Corporation Lens and light emitting device
US10883700B2 (en) 2018-08-31 2021-01-05 Nichia Corporation Lens, light emitting device and method of manufacturing the lens and the light emitting device
US12117162B2 (en) 2018-08-31 2024-10-15 Nichia Corporation Light emitting device
WO2021019914A1 (en) * 2019-07-30 2021-02-04 ソニーセミコンダクタソリューションズ株式会社 Semiconductor laser drive device, electronic apparatus, and method for manufacturing semiconductor laser drive device

Also Published As

Publication number Publication date
JP5139916B2 (en) 2013-02-06

Similar Documents

Publication Publication Date Title
US6940704B2 (en) Semiconductor light emitting device
JP4123105B2 (en) Light emitting device
US7851819B2 (en) Transparent heat spreader for LEDs
JP4134251B2 (en) Semiconductor light emitting device and camera-equipped mobile phone
JP5139916B2 (en) Light emitting device
JP4870233B1 (en) Chip LED
US20070295969A1 (en) LED device having a top surface heat dissipator
JP3900848B2 (en) Light emitting diode
JP2008027898A (en) Led module for line light source
JP3991624B2 (en) Surface mount type light emitting device and manufacturing method thereof
TW200824154A (en) Semiconductor light emitting device
JP4600455B2 (en) Lighting device
JP2007066939A (en) Semiconductor light emitting device
JP2012080085A (en) Support medium and light emitting device using the same
US9425373B2 (en) Light emitting module
JP2009065002A (en) Light-emitting apparatus
JP2004207367A (en) Light emitting diode and light emitting diode arrangement plate
JP5125060B2 (en) Light emitting device
JP2007287751A (en) Light emitting device
US20100084673A1 (en) Light-emitting semiconductor packaging structure without wire bonding
JP2007280983A (en) Light-emitting device
JP2007299775A (en) Light-emitting unit and lighting apparatus
KR101221568B1 (en) Backlight Unit having LEDs and Method for manufacturing the same
JP2009094213A (en) Light emitting device
TW201233261A (en) Light emitting module and lighting equipment

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110610

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120711

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120717

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120821

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121113

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121116

R150 Certificate of patent or registration of utility model

Ref document number: 5139916

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151122

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees