JP2007201028A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
JP2007201028A
JP2007201028A JP2006015673A JP2006015673A JP2007201028A JP 2007201028 A JP2007201028 A JP 2007201028A JP 2006015673 A JP2006015673 A JP 2006015673A JP 2006015673 A JP2006015673 A JP 2006015673A JP 2007201028 A JP2007201028 A JP 2007201028A
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Prior art keywords
light emitting
emitting element
led chip
lead frame
light
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JP2006015673A
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Japanese (ja)
Inventor
Munehiko Ochi
統彦 越智
Junichi Kinoshita
順一 木下
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Toshiba Lighting and Technology Corp
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Harison Toshiba Lighting Corp
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Priority to JP2006015673A priority Critical patent/JP2007201028A/en
Publication of JP2007201028A publication Critical patent/JP2007201028A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device in which contradictive functions that heat from an LED chip tends to escape, and that heat from solder is hard to reach to the LED chip are satisfied. <P>SOLUTION: The light emitting device comprises a light emitting element 1 such as an LED chip, a cathode side conductive lead frame 11 mounting the light emitting element, and a package 30 composed of a transparent resin material sealing the light emitting element and the conductive lead frame 11. The package 30 has at least one rectangular opening 81, 82 formed in the periphery of the light emitting element 1 to reach the conductive lead frame 11 and/or 12, wherein the openings 81, 82 are filled with resin containing particle-like filler such as diamond having thermal resistance lower than that of the package 1. Since overall thermal resistance is lowered and heat is distributed by branching a heat dissipation passage, heat of solder is not transferred easily to the LED chip. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、ＬＥＤ(Light Emitting Diode)等の発光素子を搭載した発光デバイスに関するものである。   The present invention relates to a light emitting device equipped with a light emitting element such as an LED (Light Emitting Diode).

ＬＥＤ等の発光素子は、パッケージ（外囲器）に収納されて用いられる。例えば、大型ＳＭＤ(Surface Mount Device)パッケージがある。大型ＳＭＤパッケージの従来構造を図９及び図１０の斜視図に示す。図９は、リードフレームの構造を説明するために分解してパッケージ上部を除去している。図１０は、発光デバイスの全体構造である。
二極のリードフレームの一極２１１上にＬＥＤチップ２０１を銀ペースト等の導電材料でマウントする。ＬＥＤチップ２０１の上側の電極からリードフレームの他方の極２１２上に金ワイヤ２０３を接続する。リードフレーム２１１、２１２とＬＥＤチップ２０１の外側には、白色のＰＰＡ（ポリフラルアミド）樹脂の外囲器（筐体）２２０が形成配置されている。この外囲器２２０の上面開口部２２１よりＬＥＤチップ２０１のマウントされている凹部に透明なエポキシ樹脂２３０を充填し、ＬＥＤチップ２０１を封止する。透明なエポキシ樹脂２３０は、液状の状態でポッティングし、その後加温して硬化させる。透明エポキシ樹脂２３０の表面はほぼ平坦である。 A light emitting element such as an LED is used in a package (envelope). For example, there is a large SMD (Surface Mount Device) package. The conventional structure of a large SMD package is shown in the perspective views of FIGS. FIG. 9 is exploded to remove the upper part of the package in order to explain the structure of the lead frame. FIG. 10 shows the overall structure of the light emitting device.
The LED chip 201 is mounted with a conductive material such as silver paste on the one pole 211 of the two-pole lead frame. A gold wire 203 is connected from the upper electrode of the LED chip 201 to the other pole 212 of the lead frame. On the outside of the lead frames 211 and 212 and the LED chip 201, an envelope (housing) 220 made of white PPA (polyfuralamide) resin is formed and arranged. A transparent epoxy resin 230 is filled in the concave portion where the LED chip 201 is mounted from the upper surface opening 221 of the envelope 220 to seal the LED chip 201. The transparent epoxy resin 230 is potted in a liquid state, and then heated and cured. The surface of the transparent epoxy resin 230 is substantially flat.

外囲器２２０の内側の斜面は、光を拡散反射させる反射面２４０である。ＬＥＤチップ２０１から放射された直接光は、上面開口部２２１、つまり、透明エポキシ樹脂２３０と空気との境界面で全反射を起こして外に取り出されない角度が存在する。これが入射臨界角（垂直入射を基準）である。反射面２４０の水平面からの傾斜角は、この入射臨界角の余角付近に最適化すると反射面からの光取り出し効率を最大にできる。この傾斜角は、透明エポキシ樹脂の屈折率が約１．５であるので、約４８゜（θｃ＝ｃｏｓ−１（１．０／１．５）＝４８゜）である。しかし、この傾斜角をＬＥＤチップ２０１近傍の全水平方向で実現できない。リードフレーム２１２に金ワイヤ２０３を張る必要があるからである。これをワイヤボンディングといい、このワイヤボンディングのために反射面に切れ込み部２５０を設ける。この構造は特許文献１に開示されている。 The slope inside the envelope 220 is a reflection surface 240 that diffuses and reflects light. The direct light radiated from the LED chip 201 has an angle at which it is not extracted outside due to total reflection at the upper surface opening 221, that is, the boundary surface between the transparent epoxy resin 230 and air. This is the critical incident angle (referenced to normal incidence). The light extraction efficiency from the reflecting surface can be maximized by optimizing the inclination angle of the reflecting surface 240 from the horizontal plane in the vicinity of the remainder of the incident critical angle. This inclination angle is about 48 ° (θc = cos −1 (1.0 / 1.5) = 48 °) because the refractive index of the transparent epoxy resin is about 1.5. However, this inclination angle cannot be realized in all horizontal directions in the vicinity of the LED chip 201. This is because it is necessary to stretch the gold wire 203 to the lead frame 212. This is called wire bonding, and a slit 250 is provided on the reflecting surface for the wire bonding. This structure is disclosed in Patent Document 1.

このようなＬＥＤパッケージ構造は、熱抵抗の大きい樹脂に囲まれているため放熱経路は主にＬＥＤチップ２０１の載っているリードフレームの一極２１１からである。つまり、放熱の効率が悪い。そのためＬＥＤチップ２０１に流す電流を増やして光出力を大きくしようとするとチップ自身の発熱で輝度が低下すると共に熱のために樹脂も劣化する。この放熱を良くするために図１１に示す構造がある（非特許文献１）。
エポキシ樹脂２３０は、外囲器２２０の上面開口部２２１で平坦になるようにポッティングされる（図示しない）。この例ではエポキシ樹脂２３０に熱抵抗の小さい透明なダイアモンドの粒子（フィラ）２００を混入させてシリンジ（注射器）に入れ、ＬＥＤチップ２０１の真上の位置でシリンジから硬化前の透明エポキシ樹脂２３０を滴下する。その結果、ＬＥＤチップ２０１周辺にダイアモンドフィラ２００が緻密に沈降堆積する。フィラ堆積の工程は従来のエポキシポッティング工程で行えるので材料費を除く工程コストは大きく増加しない。
同時に、ＬＥＤチップ２０１の載っているリードフレームの一方２１１とＬＥＤチップ２０１から離れている他方２１２とを熱抵抗の小さいダイアモンドフィラ２００で連結して覆われるようにする。 Since such an LED package structure is surrounded by a resin having a large thermal resistance, the heat dissipation path is mainly from one pole 211 of the lead frame on which the LED chip 201 is mounted. That is, the efficiency of heat dissipation is poor. For this reason, if the current flowing through the LED chip 201 is increased to increase the light output, the brightness is lowered due to the heat generated by the chip itself, and the resin is also deteriorated due to the heat. In order to improve this heat dissipation, there exists a structure shown in FIG. 11 (nonpatent literature 1).
The epoxy resin 230 is potted so as to be flat at the upper surface opening 221 of the envelope 220 (not shown). In this example, transparent diamond particles (filler) 200 with low thermal resistance are mixed in epoxy resin 230 and placed in a syringe (syringe), and transparent epoxy resin 230 before curing is placed from the syringe at a position directly above LED chip 201. Dripping. As a result, the diamond filler 200 is densely deposited around the LED chip 201. Since the filler deposition process can be performed by a conventional epoxy potting process, the process cost excluding the material cost does not increase greatly.
At the same time, one of the lead frames 211 on which the LED chip 201 is mounted and the other 212 distant from the LED chip 201 are connected and covered with the diamond filler 200 having a low thermal resistance.

この時のＬＥＤチップ２０１からの熱の逃げ方を図１２に矢印で示す。熱は熱抵抗の小さいリードフレーム２１１を通り、さらに、半田２６０を通って実装基板２７０に放熱される。ＬＥＤチップ２０１がフィラ２００で囲まれることにより実効的にＬＥＤチップ２０１自身の熱抵抗が小さくなる。また、放熱効果が非常に小さかった他方のリードフレーム２１２も放熱に寄与することができ、半田２６１を通って実装基板２７０に放熱される。
この結果、８５℃で５０ｍＡ以下が限界であった限界電流値を３０％程度上昇させることができる。
特開２００５−１６７１７４号公報 「発光デバイス」越智統彦著、ＬＰ０１９ The way of heat escape from the LED chip 201 at this time is shown by arrows in FIG. The heat passes through the lead frame 211 having a low thermal resistance, and is further radiated to the mounting substrate 270 through the solder 260. When the LED chip 201 is surrounded by the filler 200, the thermal resistance of the LED chip 201 itself is effectively reduced. In addition, the other lead frame 212 that has a very small heat dissipation effect can also contribute to heat dissipation and is radiated to the mounting substrate 270 through the solder 261.
As a result, it is possible to increase the limit current value, which was limited to 50 mA or less at 85 ° C., by about 30%.
JP 2005-167174 A “Light Emitting Device” by Tomohiko Ochi, LP019

前記ダイアモンドフィラ等の低熱抵抗フィラは、充填が容易で放熱に極めて効果的である。しかし、ＬＥＤパッケージは、安価でありながらより一層の放熱効果の向上が発光デバイスにおけるパッケージの課題である。
また、さらに単に熱抵抗を小さくするだけでは次のような問題（図１３参照）がある。半田２６０が鉛フリー半田である場合、半田付けの際に２７０℃の高温まで温度が上昇する。この場合、半田付けの時間を短時間に止めて、半田の熱がＬＥＤチップ２０１をヒートアップしないように注意している。リードフレーム２１１を通る半田２６０からＬＥＤチップ２０１への熱経路の熱抵抗が小さくなると、逆に、鉛フリー半田付けの際にＬＥＤチップの温度を上げてしまう。
本発明は、このような事情によりなされたものであり、ＬＥＤチップからの熱は逃げ易く、半田からの熱はＬＥＤチップへ到達し難いという矛盾した機能を有する発光デバイスを提供する。 The low thermal resistance filler such as the diamond filler is easy to fill and extremely effective for heat dissipation. However, the LED package is a problem of the package in the light-emitting device, although it is inexpensive and further improvement of the heat dissipation effect.
Further, simply reducing the thermal resistance causes the following problem (see FIG. 13). When the solder 260 is lead-free solder, the temperature rises to a high temperature of 270 ° C. during soldering. In this case, the soldering time is stopped in a short time so that the heat of the solder does not heat up the LED chip 201. If the thermal resistance of the heat path from the solder 260 passing through the lead frame 211 to the LED chip 201 is reduced, the temperature of the LED chip is raised during lead-free soldering.
This invention is made | formed by such a situation, and provides the light emitting device which has the contradictory function that the heat | fever from an LED chip is easy to escape and the heat | fever from a solder does not reach | attain an LED chip easily.

本発明の発光デバイスの一態様は、発光素子と、前記発光素子がマウントされた導電性リードフレームと、前記発光素子及び前記導電性リードフレームを封止した透明樹脂材料からなるパッケージとを具備し、前記パッケージは、前記導電性リードフレームに達する少なくとも１つの開口部が前記発光素子の周辺部に形成され、前記開口部には前記パッケージより熱抵抗の小さい粒子状フィラを含む樹脂が充填されていることを特徴としている。
また、本発明の発光デバイスの一態様は、発光素子と、前記発光素子がマウントされた導電性リードフレームと、上面に第１の開口部を有し、前記第１の開口部底面に前記発光素子が露出する不透明な筐体とを具備し、前記筐体には前記リードフレームに達する少なくとも１つの第２の開口部が前記発光素子の周辺に形成され、且つ前記第２の開口部には前記筐体より熱抵抗の小さい粒子状フィラを含む樹脂が充填されていることを特徴としている。 One aspect of the light emitting device of the present invention includes a light emitting element, a conductive lead frame on which the light emitting element is mounted, and a package made of a transparent resin material that seals the light emitting element and the conductive lead frame. In the package, at least one opening reaching the conductive lead frame is formed in a peripheral portion of the light emitting element, and the opening is filled with a resin including a particulate filler having a lower thermal resistance than the package. It is characterized by being.
One embodiment of the light emitting device of the present invention includes a light emitting element, a conductive lead frame on which the light emitting element is mounted, a first opening on an upper surface, and the light emission on a bottom surface of the first opening. An opaque casing from which the element is exposed, and at least one second opening reaching the lead frame is formed in the casing around the light emitting element, and the second opening has A resin containing a particulate filler having a lower thermal resistance than that of the housing is filled.

また、本発明の発光デバイスの一態様は、発光素子と、前記発光素子がマウントされた導電性リードフレームと、上面に開口部を有し、前記開口部底面に前記発光素子が露出する不透明な筐体とを具備し、前記開口部の側面に反射面を有し、前記反射面の一部に前記リードフレームに達する少なくとも１つの切れ込み部が形成され、前記切れ込み部から前記筐体より熱抵抗の小さい粒子状フィラを含む樹脂が充填されていることを特徴としている。   One embodiment of the light-emitting device of the present invention is an opaque light-emitting element, a conductive lead frame on which the light-emitting element is mounted, an opening on an upper surface, and the light-emitting element is exposed on the bottom of the opening. A housing having a reflective surface on a side surface of the opening, wherein at least one cut portion reaching the lead frame is formed in a part of the reflective surface, and thermal resistance from the cut portion is greater than that of the housing. It is characterized by being filled with a resin containing a small particulate filler.

本発明は、熱抵抗が小さくて放熱性の良いダイアモンドのような粒子状のフィラの充填部をＬＥＤチップ周辺に限定しないで、放熱フィンのように拡張することにより、全体の熱抵抗を下げると共に放熱経路の分岐によって熱が分散し、半田の熱がＬＥＤチップに伝わり難くなる。   The present invention reduces the overall thermal resistance by extending the filler portion of the particulate filler such as diamond having a low thermal resistance and good heat dissipation to the vicinity of the LED chip without extending to the periphery of the LED chip. The heat is dispersed by the branching of the heat dissipation path, and the heat of the solder is hardly transmitted to the LED chip.

本発明は、上記のような機能を実現するために、熱抵抗が小さくて放熱性の良いダイアモンドのような粒子状のフィラの充填部をＬＥＤチップ周辺に限定しないで、さらに拡張することにより、全体の熱抵抗を下げると共に放熱経路の分岐によって熱が分散し、半田の熱がＬＥＤチップに伝わり難くなるようにしたものである。
以下、実施例を参照して発明の実施の形態を説明する。 In order to realize the above-described function, the present invention is not limited to the periphery of the LED chip, but is further expanded without filling the filler portion of the particulate filler such as diamond with low heat resistance and good heat dissipation, The overall thermal resistance is lowered and heat is dispersed by branching of the heat radiation path, so that the heat of solder is hardly transmitted to the LED chip.
Hereinafter, embodiments of the invention will be described with reference to examples.

まず、図１乃至図３を参照して実施例１を説明する。
図１は、この実施例の発光デバイスの斜視図、図２は、放熱経路を説明するこの実施例の発光デバイスの他の例を示す断面図、図３は、図２の発光デバイスを実装基板に取り付けた時の放熱経路を説明する断面図である。
この実施例の発光デバイスは、パッケージとして透明なエポキシ樹脂封止体３０から構成されている。この様に全体が透明なエポキシ樹脂封止体３０で構成される構造は、シンプルであり安価でもあるので、一般的に使用されている。
発光デバイスは、１対のリードフレーム１１、１２を有する。二極のリードフレームの一極１１上に発光素子としてＬＥＤチップ１を銀ペースト等の導電材料でマウントする。ＬＥＤチップ１の上側の電極からリードフレームの他極１２上に金ワイヤ３を接続する。リードフレーム１１、１２とＬＥＤチップ１の外側には、方形の透明なエポキシ樹脂封止体３０が形成配置されている。このエポキシ樹脂封止体３０の対向する１対の面上に外部電極を構成するリードフレーム１１、１２の一部が露出している。 First, Embodiment 1 will be described with reference to FIGS.
1 is a perspective view of the light-emitting device of this embodiment, FIG. 2 is a cross-sectional view illustrating another example of the light-emitting device of this embodiment for explaining a heat dissipation path, and FIG. 3 is a mounting substrate of the light-emitting device of FIG. It is sectional drawing explaining the heat dissipation path | route when attaching to.
The light emitting device of this embodiment is composed of a transparent epoxy resin sealing body 30 as a package. Thus, since the structure comprised with the epoxy resin sealing body 30 with the whole transparency is simple and cheap, it is generally used.
The light emitting device has a pair of lead frames 11 and 12. The LED chip 1 is mounted as a light emitting element on one electrode 11 of a two-pole lead frame with a conductive material such as silver paste. A gold wire 3 is connected from the upper electrode of the LED chip 1 to the other electrode 12 of the lead frame. A rectangular transparent epoxy resin sealing body 30 is formed and disposed outside the lead frames 11 and 12 and the LED chip 1. Part of the lead frames 11 and 12 constituting the external electrode is exposed on a pair of opposed surfaces of the epoxy resin sealing body 30.

ＬＥＤチップ１とリードフレーム１１、１２とをエポキシ樹脂封止体３０で樹脂封止して全体構造を完成させてから、ＬＥＤチップ１の上面が対向するエポキシ樹脂封止体３０の上面からリードフレーム１１、１２に達する矩形の開口部８１、８２をＬＥＤチップ１の周辺部に開ける。そして開口部８１、８２中にエポキシ樹脂に混ぜたダイアモンドフィラ１０１、１０２を注入し充填する。
ダイアモンドフィラ１０１、１０２は、エポキシ樹脂封止体３０に埋め込まれたリードフレーム１１、１２の上面側に形成配置されている。しかし、図２、３にも示されているように、ＬＥＤチップ１の周囲からリードフレーム１１、１２の下面側にもダイアモンドフィラ１１０が沈降している。このダイアモンドフィラ１１０は、ダイアモンドフィラ１００と同じ様に開口部をエポキシ樹脂封止体３０に設けてそこにダイアモンドフィラを注入して充填しても良いし、エポキシ樹脂封止体３０を形成する際に沈降堆積させても良い。 The LED chip 1 and the lead frames 11 and 12 are sealed with an epoxy resin sealing body 30 to complete the entire structure, and then the lead frame starts from the top surface of the epoxy resin sealing body 30 with the top surface of the LED chip 1 facing. The rectangular openings 81 and 82 reaching 11 and 12 are opened in the peripheral part of the LED chip 1. Then, diamond fillers 101 and 102 mixed with epoxy resin are injected into the openings 81 and 82 and filled.
The diamond fillers 101 and 102 are formed and arranged on the upper surface side of the lead frames 11 and 12 embedded in the epoxy resin sealing body 30. However, as shown in FIGS. 2 and 3, the diamond filler 110 also sinks from the periphery of the LED chip 1 to the lower surfaces of the lead frames 11 and 12. The diamond filler 110 may be provided with an opening in the epoxy resin sealing body 30 in the same manner as the diamond filler 100 and filled by injecting the diamond filler, or when the epoxy resin sealing body 30 is formed. Sedimentation deposition may be performed.

この様にして形成された動作しているときの発光デバイスの放熱経路を図２を参照して説明する。この図では、エポキシ樹脂封止体３０のリードフレーム１１、１２に達する矩形の開口部を更に増やして（８１〜８４）、その中にエポキシ樹脂に混ぜたダイアモンドフィラ１０１〜１０４を注入し充填して更に放熱効果を上げている。ＬＥＤチップ１から発生した熱は、矢印で示すように、リードフレーム１１もしくはリードフレーム１２から逃げるかリードフレーム１１，１２の途中にある複数のダイアモンドフィラ１０１〜１０４にも分岐して、これらが放熱フィンのように、空気中にも放熱される。このようにして放熱効果が従来と比べて著しく向上する。   A heat dissipation path of the light emitting device formed in this way will be described with reference to FIG. In this figure, the rectangular openings reaching the lead frames 11 and 12 of the epoxy resin sealing body 30 are further increased (81 to 84), and diamond fillers 101 to 104 mixed with epoxy resin are injected and filled therein. The heat dissipation effect is further improved. The heat generated from the LED chip 1 escapes from the lead frame 11 or the lead frame 12 or branches to a plurality of diamond fillers 101 to 104 in the middle of the lead frames 11 and 12 as indicated by arrows, and these heat is dissipated. Like fins, heat is dissipated in the air. In this way, the heat dissipation effect is significantly improved as compared with the conventional case.

次に、図３を参照して発光デバイスを実装基板に実装する際の放熱経路を説明する。発光デバイスは、実装基板７０に載置されてから、リードフレーム１１と実装基板７０の配線（図示しない）とは鉛フリー半田６０により接続され、リードフレーム１２と実装基板７０の配線（図示しない）とは鉛フリー半田６１により接続される。この例では、２７０℃という高温の半田６０、６１からの熱も、矢印に示すように、リードフレーム１１、１２の途中にあるダイアモンドフィラ１０１〜１０４にも分岐し、これらが放熱フィンのように、空気中に放熱される。このように実装中の放熱にも効果がある。したがって、ＬＥＤチップ１への熱的ダメージを防ぐことができる。
粒子状のダイアモンドフィラは、エポキシ樹脂に混ぜてシリンジにいれ、ＬＥＤチップ１の真上の位置でシリンジから硬化前の透明エポキシ樹脂封止体３０に滴下させる。この工程は技術的には確立されており、工程は比較的簡単である。 Next, a heat dissipation path when the light emitting device is mounted on the mounting substrate will be described with reference to FIG. After the light emitting device is mounted on the mounting substrate 70, the lead frame 11 and the wiring (not shown) between the mounting substrate 70 are connected by lead-free solder 60, and the wiring between the lead frame 12 and the mounting substrate 70 (not shown). Are connected by lead-free solder 61. In this example, the heat from solders 60 and 61 having a high temperature of 270 ° C. is also branched to the diamond fillers 101 to 104 in the middle of the lead frames 11 and 12 as indicated by arrows, and these are like radiating fins. The heat is dissipated in the air. Thus, it is also effective for heat dissipation during mounting. Therefore, thermal damage to the LED chip 1 can be prevented.
The particulate diamond filler is mixed with an epoxy resin, put into a syringe, and dropped from the syringe onto the transparent epoxy resin encapsulant 30 before curing at a position directly above the LED chip 1. This process is technically established and the process is relatively simple.

次に、図４を参照して実施例２を説明する。
図４は、この実施例における発光デバイスの斜視図である。エポキシ樹脂（図示しない）は、筐体（外囲器）２０の上面開口部２１で平坦になるようにポッティングされる（図示しない）。この例ではエポキシ樹脂に熱抵抗の小さい透明なダイアモンドの粒子（フィラ）１００を混入させてシリンジ（注射器）に入れ、ＬＥＤチップ１の真上の位置でシリンジから硬化前の透明エポキシ樹脂を滴下する。その結果、ＬＥＤチップ１周辺にダイアモンドフィラ１００が緻密に沈降堆積する。フィラ堆積の工程は従来のエポキシポッティング工程で行えるので材料費を除く工程コストは大きく増加しない。同時に、ＬＥＤチップ１の載っているリードフレームの一方１１とＬＥＤチップ１から離れている他方のリードフレームとを熱抵抗の小さいダイアモンドフィラ１００で連結して覆われるようにする。 Next, Embodiment 2 will be described with reference to FIG.
FIG. 4 is a perspective view of the light emitting device in this embodiment. The epoxy resin (not shown) is potted (not shown) so as to be flat at the upper surface opening 21 of the housing (envelope) 20. In this example, transparent diamond particles (filler) 100 having a low thermal resistance are mixed in an epoxy resin and placed in a syringe (syringe), and the transparent epoxy resin before curing is dropped from the syringe at a position directly above the LED chip 1. . As a result, the diamond filler 100 is densely deposited around the LED chip 1. Since the filler deposition process can be performed by a conventional epoxy potting process, the process cost excluding the material cost does not increase greatly. At the same time, one lead frame 11 on which the LED chip 1 is mounted and the other lead frame remote from the LED chip 1 are connected and covered with a diamond filler 100 having a low thermal resistance.

この実施例は、従来例の図１１と基本構造は同じである。
図１１と異なるところは、この実施例がワイヤボンディングを行うための切れ込み部５０の真上からエポキシ樹脂に混ぜたダイアモンドフィラ１００をシリンジから滴下させることにより生じる。即ち、切れ込み部５０ではダイアモンドフィラ１００を高く堆積させることができる。ＬＥＤチップ１の周辺には硬化前のエポキシ樹脂内をダイアモンドフィラ１００が拡散して到達して低く滞積する。 This embodiment has the same basic structure as the conventional example shown in FIG.
The difference from FIG. 11 is caused by dropping a diamond filler 100 mixed with epoxy resin from a syringe directly above the notch 50 for wire bonding. That is, the diamond filler 100 can be deposited high in the cut portion 50. Around the LED chip 1, the diamond filler 100 diffuses and reaches the inside of the epoxy resin before curing and stays low.

このような構成による効果は、切り込み部５０を埋めたダイアモンドフィラ１００が高く堆積されているため実施例１と同様に熱経路の分岐しこれが放熱フィンの役割を果たしている。また、実質的に切れ込み部を５０を埋めたダイアモンドフィラ１００の表面は、ダイアモンドフィラの屈折率が約２．４と、エポキシ樹脂の屈折率（約１．５）よりも高いため散乱拡散反射を起こし、反射面４０が連続するのと同様の効果を生じる。そのため、反射効率が向上してデバイスの光取り出し効率も向上する。また、光取り出し面であるＬＥＤチップ１上部へのダイアモンドフィラ１００の堆積を抑制できる。したがって、上部に堆積したダイアモンドフィラ１００による光学的散乱ロスも低く抑えることができる。   The effect of such a configuration is that the diamond filler 100 in which the cut portions 50 are buried is highly deposited, so that the heat path is branched in the same manner as in the first embodiment, and this plays the role of a heat radiating fin. In addition, the surface of the diamond filler 100 in which the cut portion 50 is substantially filled has a refractive index of the diamond filler of about 2.4, which is higher than the refractive index of the epoxy resin (about 1.5). This produces the same effect as when the reflecting surface 40 continues. Therefore, the reflection efficiency is improved and the light extraction efficiency of the device is also improved. Moreover, deposition of the diamond filler 100 on the LED chip 1 upper part which is a light extraction surface can be suppressed. Therefore, the optical scattering loss due to the diamond filler 100 deposited on the upper portion can also be kept low.

次に、図５及び図６を参照して実施例３を説明する。
図５及び図６は、この実施例における発光デバイスの斜視図である。図５は、ダイアモンドフィラを充填する前の状態であり、図６は、充填後の状態を示している。図４のものと同様に、エポキシ樹脂（図示しない）は、筐体（外囲器）２０の上面開口部２１で平坦になるようにポッティングされる（図示しない）。この例ではエポキシ樹脂に熱抵抗の小さい透明なダイアモンドの粒子（フィラ）１００を混入させてシリンジ（注射器）に入れＬＥＤチップ１の真上の位置でシリンジから硬化前の透明エポキシ樹脂を滴下する。その結果、ＬＥＤチップ１周辺にダイアモンドフィラ１００が緻密に沈降堆積する。フィラ堆積の工程は従来のエポキシポッティング工程で行えるので材料費を除く工程コストは大きく増加しない。同時に、ＬＥＤチップ１の載っているリードフレームの一方１１とＬＥＤチップ１から離れている他方１２のリードフレームとを熱抵抗の小さいダイアモンドフィラ１００で連結して覆われるようにする。 Next, Embodiment 3 will be described with reference to FIGS.
5 and 6 are perspective views of the light emitting device in this embodiment. FIG. 5 shows a state before filling the diamond filler, and FIG. 6 shows a state after filling. As in FIG. 4, epoxy resin (not shown) is potted (not shown) so as to be flat at the upper surface opening 21 of the housing (envelope) 20. In this example, transparent diamond particles (filler) 100 having a low thermal resistance are mixed into the epoxy resin, put into a syringe (syringe), and the transparent epoxy resin before curing is dropped from the syringe at a position directly above the LED chip 1. As a result, the diamond filler 100 is densely deposited around the LED chip 1. Since the filler deposition process can be performed by a conventional epoxy potting process, the process cost excluding the material cost does not increase greatly. At the same time, one of the lead frames 11 on which the LED chip 1 is mounted and the other 12 lead frames remote from the LED chip 1 are connected and covered with a diamond filler 100 having a low thermal resistance.

この実施例では、実施例２において形成した切れ込み部５０が同様に形成されると共に、更に切れ込み部５１、５２が形成されている。切れ込み部５０は、リードフレーム１２とボンディングワイヤである金ワイヤ３との接合部を露出し、切れ込み部５１は、リードフレーム１１を露出し、切れ込み部５２は、リードフレーム１２を露出している。
これら切れ込み部は、側面が垂直もしくは垂直より外向きにやや広くなっている。これはＰＰＡ樹脂より形成される外囲器（筐体）２０を成形する際に金型を上にスムーズに抜くためである。垂直より狭ければ、通常の工程では金型が抜け図に製作が困難になる。
また、反射面４０は、より外側で位置が上の方が反射に寄与する。そのため、外側で反射面４０の上部に該当する部分で広くしてある。リードフレーム１１、１２とＬＥＤチップ１に接触する部分の面積が広いためより大きな放熱効果が得られる。
更にダイアモンドフィラ１００も切れ込み部から滴下させた場合に自然と内側の下部に沈降拡散し易い構造であり、再現性の良い製造が容易となる。 In this embodiment, the cut portion 50 formed in the second embodiment is formed in the same manner, and further cut portions 51 and 52 are formed. The notch 50 exposes the joint between the lead frame 12 and the gold wire 3 as a bonding wire, the notch 51 exposes the lead frame 11, and the notch 52 exposes the lead frame 12.
These cut portions have a side surface that is vertical or slightly wider outward than vertical. This is because when the envelope (housing) 20 made of PPA resin is molded, the mold is smoothly pulled up. If it is narrower than vertical, it will be difficult to produce a die in a normal process.
In addition, the reflection surface 40 is more on the outer side and on the upper side, contributing to reflection. Therefore, it is widened at a portion corresponding to the upper portion of the reflection surface 40 on the outside. Since the area of the portion in contact with the lead frames 11 and 12 and the LED chip 1 is large, a greater heat dissipation effect can be obtained.
Furthermore, when the diamond filler 100 is also dropped from the cut portion, the diamond filler 100 naturally has a structure that easily settles and diffuses in the lower part on the inner side, thereby facilitating production with good reproducibility.

次に、図７及び図８を参照して実施例３を説明する。
図７及び図８は、この実施例における発光デバイスの斜視図である。図７は、ダイアモンドフィラを充填する前の状態であり、図８は、充填後の状態を示している。この実施例は、実施例１の矩形開口部と実施例３の複数の切れ込み部を併用したことに特徴がある。図４のものと同様に、エポキシ樹脂（図示しない）は、筐体（外囲器）２０の上面開口部２１で平坦になるようにポッティングされる（図示しない）。この例ではエポキシ樹脂に熱抵抗の小さい透明なダイアモンドの粒子（フィラ）１００を混入させてシリンジ（注射器）に入れＬＥＤチップ１の真上の位置でシリンジから硬化前の透明エポキシ樹脂を滴下する。その結果、ＬＥＤチップ１周辺にダイアモンドフィラ１００が緻密に沈降堆積する。フィラ堆積の工程は従来のエポキシポッティング工程で行えるので材料費を除く工程コストは大きく増加しない。同時に、ＬＥＤチップ１の載っているリードフレームの一方１１とＬＥＤチップ１から離れている他方１２のリードフレームとを熱抵抗の小さいダイアモンドフィラ１００で連結して覆われるようにする。 Next, Embodiment 3 will be described with reference to FIGS.
7 and 8 are perspective views of the light emitting device in this embodiment. FIG. 7 shows a state before filling the diamond filler, and FIG. 8 shows a state after filling. This embodiment is characterized in that the rectangular opening of the first embodiment and the plurality of cut portions of the third embodiment are used in combination. As in FIG. 4, epoxy resin (not shown) is potted (not shown) so as to be flat at the upper surface opening 21 of the housing (envelope) 20. In this example, transparent diamond particles (filler) 100 having a low thermal resistance are mixed into the epoxy resin, put into a syringe (syringe), and the transparent epoxy resin before curing is dropped from the syringe at a position directly above the LED chip 1. As a result, the diamond filler 100 is densely deposited around the LED chip 1. Since the filler deposition process can be performed by a conventional epoxy potting process, the process cost excluding the material cost does not increase greatly. At the same time, one of the lead frames 11 on which the LED chip 1 is mounted and the other 12 lead frames remote from the LED chip 1 are connected and covered with a diamond filler 100 having a low thermal resistance.

この実施例は、切れ込み部５０、５１、５２に加え、更にＰＰＡ樹脂外囲器（筐体）２０の上面開口部２１のＬＥＤチップ１が配置されている領域より外側に矩形開口部８１、８２が形成されている。この実施例では、図７に示す切れ込み部５１、５２は、図８に示すように、矩形開口部８１、８２と外囲器上面開口部２１とを繋ぐ連結部としても機能している。その構造は、図７に示すと同様に、側面が垂直もしくは垂直より外向きにやや広くなっている。これは、前述のように、金型を上にスムーズに抜くためである。また、反射面４０は外側の上の方で反射に寄与するために外側で反射面４０の上部に該当する部分で狭く、内側で反射面４０の下部に該当する部分で広くしてある。   In this embodiment, in addition to the cut portions 50, 51, 52, the rectangular openings 81, 82 outside the region where the LED chip 1 of the upper surface opening 21 of the PPA resin envelope (housing) 20 is disposed. Is formed. In this embodiment, the cut portions 51 and 52 shown in FIG. 7 also function as connecting portions that connect the rectangular openings 81 and 82 and the envelope upper surface opening 21 as shown in FIG. As in the structure shown in FIG. 7, the side surface is vertical or slightly wider outward than vertical. This is because the mold is pulled out smoothly as described above. Further, the reflecting surface 40 contributes to reflection on the upper side of the outer side, and is narrow at a portion corresponding to the upper portion of the reflecting surface 40 on the outer side and widened at a portion corresponding to the lower portion of the reflecting surface 40 on the inner side.

この実施例では、矩形開口部８１、８２にダイアモンドフィラ１０１、１０２を滴下させることにより、実施例１と同様の効果を得ることができる。即ち、ＬＥＤチップ１からの発熱がリードフレーム１１もしくはリードフレーム１２から逃げる他に、リードフレーム１１、１２の途中にある複数のダイアモンドフィラ１０１、１０２の存在する領域にも分岐し、これらが放熱フィンの役割をして空気中にも放熱されるので放熱効果が向上する。
また、実装の際に、高温鉛フリー半田からの熱もリードフレームの途中の領域にあるダイアモンドフィラ１０１、１０２にも分岐し、これらが放熱フィンの働きをして空気中に放熱される。したがって、ＬＥＤチップ１への熱的ダメージを有効に防ぐことができる。 In this embodiment, the same effects as those of the first embodiment can be obtained by dropping the diamond fillers 101 and 102 into the rectangular openings 81 and 82. In other words, the heat generated from the LED chip 1 escapes from the lead frame 11 or the lead frame 12, and also branches to an area where a plurality of diamond fillers 101 and 102 exist in the middle of the lead frames 11 and 12, which are radiated fins. Therefore, the heat radiation effect is improved because the heat is also radiated in the air.
In mounting, heat from the high-temperature lead-free solder also branches to the diamond fillers 101 and 102 in the middle region of the lead frame, and these function as heat radiation fins and radiate heat into the air. Therefore, thermal damage to the LED chip 1 can be effectively prevented.

以上、本発明の実施の形態は次のようにまとめられる。
（１） 発光デバイスは、発光素子と、前記発光素子がマウントされた導電性リードフレームと、前記発光素子及び前記導電性リードフレームを封止した透明樹脂材料からなるパッケージとを具備し、前記パッケージは、前記導電性リードフレームに達する少なくとも１つの開口部が前記発光素子の周辺部に形成され、前記開口部には前記パッケージより熱抵抗の小さい粒子状フィラを含む樹脂が充填されていることを特徴とする（請求項１）。
（２） 発光デバイスは、発光素子と、前記発光素子がマウントされた導電性リードフレームと、上面に第１の開口部を有し、前記第１の開口部底面に前記発光素子が露出する不透明な筐体とを具備し、前記筐体には前記リードフレームに達する少なくとも１つの第２の開口部が前記発光素子の周辺部に形成され、且つ前記第２の開口部には前記筐体より熱抵抗の小さい粒子状フィラを含む樹脂が充填されていることを特徴とする（請求項２）。
（３） 発光デバイスは、発光素子と、前記発光素子がマウントされた導電性リードフレームと、上面に開口部を有し、前記開口部底面に前記発光素子が露出する不透明な筐体とを具備し、前記開口部の側面に反射面を有し、前記反射面の一部に前記リードフレームに達する少なくとも１つの切れ込み部が形成され、前記切れ込み部から前記筐体より熱抵抗の小さい粒子状フィラを含む樹脂が充填されていることを特徴とする（請求項３）。 The embodiments of the present invention are summarized as follows.
(1) A light emitting device includes a light emitting element, a conductive lead frame on which the light emitting element is mounted, and a package made of a transparent resin material in which the light emitting element and the conductive lead frame are sealed. The at least one opening reaching the conductive lead frame is formed in the peripheral part of the light emitting element, and the opening is filled with a resin containing a particulate filler having a thermal resistance smaller than that of the package. It is characterized (claim 1).
(2) The light-emitting device has a light-emitting element, a conductive lead frame on which the light-emitting element is mounted, a first opening on the top surface, and an opaque surface in which the light-emitting element is exposed on the bottom surface of the first opening. A housing, and at least one second opening reaching the lead frame is formed in a peripheral portion of the light emitting element, and the second opening is formed by the housing from the housing. A resin containing a particulate filler having a low thermal resistance is filled (claim 2).
(3) The light emitting device includes a light emitting element, a conductive lead frame on which the light emitting element is mounted, and an opaque housing having an opening on the top surface and exposing the light emitting element on the bottom surface of the opening. And a particulate filler having a reflective surface on a side surface of the opening, wherein at least one cut portion reaching the lead frame is formed in a part of the reflective surface, and the thermal resistance is lower than that of the housing from the cut portion. It is filled with resin containing (claim 3).

（４） 発光デバイスは、発光素子と、前記発光素子がマウントされた導電性リードフレームと、上面に第１の開口部を有し、前記第１の開口部底面に前記発光素子が露出する不透明な筐体とを具備し、前記第１の開口部の側面に反射面を有し、前記筐体には少なくとも１つの第２の開口部が形成され、前記第１の開口部は、前記第２の開口部と前記反射面の一部を除去して連結され、前記第２の開口部から前記筐体より熱抵抗の小さい粒子状フィラを含む樹脂が充填されていることを特徴とする。
（５） （３）又は（４）の発光デバイスにおいて、前記切れ込み部もしくは前記反射面の一部を除去して連結された前記連結部は、側面が垂直から垂直より外向きに広角であり、且つ前記反射面の上部で幅が狭く下部で幅が広くなっていることを特徴とする。
（６） （３）乃至（５）のいずれかの発光デバイスにおいて、前記第１の開口部が熱抵抗の大きな透明樹脂材料で充填され、且つ前記反射面の傾斜角が前記発光素子から放射された直接光が前記第１の開口部の熱抵抗の大きな透明樹脂材料と空気との境界面に対して全反射を起こす入射臨界角（余角）の±１５度の範囲にあることを特徴とする。
（７） （１）乃至（６）のいずれかの発光デバイスにおいて、前記樹脂に含まれる前記熱抵抗の小さい粒子状フィラは、ダイアモンドであることを特徴とする。
(4) The light emitting device has a light emitting element, a conductive lead frame on which the light emitting element is mounted, a first opening on the upper surface, and the light emitting element is exposed on the bottom surface of the first opening. A housing having a reflective surface on a side surface of the first opening, wherein the housing has at least one second opening, and the first opening has the first opening. And a part of the reflection surface is removed and connected, and the second opening is filled with a resin containing a particulate filler having a lower thermal resistance than the casing.
(5) In the light emitting device according to (3) or (4), the connection portion connected by removing a part of the cut portion or the reflection surface has a wide-angle side surface from a vertical direction to an outward direction from a vertical direction, In addition, the width is narrow at the top of the reflection surface and wide at the bottom.
(6) In the light emitting device according to any one of (3) to (5), the first opening is filled with a transparent resin material having a large thermal resistance, and an inclination angle of the reflecting surface is radiated from the light emitting element. In addition, the direct light is in the range of ± 15 degrees of a critical incident angle (residual angle) that causes total reflection with respect to the boundary surface between the transparent resin material having high thermal resistance in the first opening and the air. To do.
(7) In the light emitting device according to any one of (1) to (6), the particulate filler having a low thermal resistance included in the resin is a diamond.

本発明の一実施例である実施例１の発光デバイスの斜視図。The perspective view of the light-emitting device of Example 1 which is one Example of this invention. 放熱経路を説明する実施例１の発光デバイスの他の例を示す断面図。Sectional drawing which shows the other example of the light-emitting device of Example 1 explaining a thermal radiation path | route. 図２の発光デバイスを実装基板に取り付けた時の放熱経路を説明する断面図。Sectional drawing explaining the thermal radiation path | route when the light emitting device of FIG. 2 is attached to the mounting substrate. 本発明の一実施例である実施例２の発光デバイスの斜視図。The perspective view of the light-emitting device of Example 2 which is one Example of this invention. 本発明の一実施例である実施例３のダイアモンドフィラを充填する前の発光デバイスの斜視図。The perspective view of the light-emitting device before being filled with the diamond filler of Example 3 which is one Example of this invention. 図５のダイアモンドフィラを充填した後の発光デバイスの斜視図。FIG. 6 is a perspective view of a light emitting device after filling the diamond filler of FIG. 5. 本発明の一実施例である実施例４のダイアモンドフィラを充填する前の発光デバイスの斜視図。The perspective view of the light-emitting device before being filled with the diamond filler of Example 4 which is one Example of this invention. 図７のダイアモンドフィラを充填した後の発光デバイスの斜視図。The perspective view of the light-emitting device after filling the diamond filler of FIG. 従来のＳＭＤ−ＬＥＤパッケージに収納された発光デバイスのリードフレーム部を露出させた斜視図。The perspective view which exposed the lead frame part of the light emitting device accommodated in the conventional SMD-LED package. 従来のＳＭＤ−ＬＥＤパッケージに収納された発光デバイスの斜視図。The perspective view of the light-emitting device accommodated in the conventional SMD-LED package. 従来のＳＭＤ−ＬＥＤパッケージに収納され、ダイアモンドフィラをＬＥＤチップ周辺に堆積させた発光デバイスの斜視図。The perspective view of the light emitting device which was accommodated in the conventional SMD-LED package, and deposited the diamond filler around LED chip. 従来のＳＭＤ−ＬＥＤパッケージに収納された発光デバイスにおいて、ＬＥＤチップからの放熱経路を示す断面図。Sectional drawing which shows the thermal radiation path | route from LED chip in the light-emitting device accommodated in the conventional SMD-LED package. 従来のＳＭＤ−ＬＥＤパッケージに収納され、実装基板に搭載された発光デバイスにおいて、半田からＬＥＤチップへの放熱経路を示す断面図。Sectional drawing which shows the thermal radiation path | route from solder to LED chip in the light emitting device accommodated in the conventional SMD-LED package and mounted in the mounting board | substrate.

符号の説明Explanation of symbols

１・・・ＬＥＤチップ（発光素子）
３・・・金ワイヤ（ボンディングワイヤ）
１１・・・リードフレーム（カソード側）
１２・・・リードフレーム（アノード側）
２０・・・外囲器（筐体）
２１・・・外囲器（筐体）の上面開口部
３０・・・透明エポキシ樹脂封止体
４０・・・反射面
５０、５１、５２・・・反射面の切れ込み部
６０、６１・・・半田
７０・・・実装基板
８１、８２、８３、８４・・・矩形開口部
９１、９２・・・連結部（反射面の切れ込み部）
１００、１０１、１０２、１０３、１０４、１１０・・・ダイアモンドフィラ 1 ... LED chip (light emitting element)
3. Gold wire (bonding wire)
11 ... Lead frame (cathode side)
12 ... Lead frame (anode side)
20: Envelope (housing)
21: Opening of upper surface of envelope (housing) 30 ... Transparent epoxy resin encapsulant 40 ... Reflecting surface 50, 51, 52 ... Cut portion of reflecting surface 60, 61 ... Solder 70 ... Mounting substrate 81, 82, 83, 84 ... Rectangle opening 91, 92 ... Connecting part (cutting part of reflection surface)
100, 101, 102, 103, 104, 110 ... Diamond filler

Claims (3)

発光素子と、前記発光素子がマウントされた導電性リードフレームと、前記発光素子及び前記導電性リードフレームを封止した透明樹脂材料からなるパッケージとを具備し、前記パッケージは、前記導電性リードフレームに達する少なくとも１つの開口部が前記発光素子の周辺部に形成され、前記開口部には前記パッケージより熱抵抗の小さい粒子状フィラを含む樹脂が充填されていることを特徴とする発光デバイス。 A light-emitting element; a conductive lead frame on which the light-emitting element is mounted; and a package made of a transparent resin material that seals the light-emitting element and the conductive lead frame. The package includes the conductive lead frame. The light emitting device is characterized in that at least one opening reaching the edge of the light emitting element is formed in a peripheral portion of the light emitting element, and the opening is filled with a resin including a particulate filler having a lower thermal resistance than the package. 発光素子と、前記発光素子がマウントされた導電性リードフレームと、上面に第１の開口部を有し、前記第１の開口部底面に前記発光素子が露出する不透明な筐体とを具備し、前記筐体には前記リードフレームに達する少なくとも１つの第２の開口部が前記発光素子の周辺部に形成され、且つ前記第２の開口部には前記筐体より熱抵抗の小さい粒子状フィラを含む樹脂が充填されていることを特徴とする発光デバイス。 A light emitting element; a conductive lead frame on which the light emitting element is mounted; and an opaque housing having a first opening on an upper surface and exposing the light emitting element on a bottom surface of the first opening. The housing has at least one second opening reaching the lead frame at the periphery of the light emitting element, and the second opening has a particulate filler having a lower thermal resistance than the housing. A light-emitting device characterized by being filled with a resin containing. 発光素子と、前記発光素子がマウントされた導電性リードフレームと、上面に開口部を有し、前記開口部底面に前記発光素子が露出する不透明な筐体とを具備し、前記開口部の側面に反射面を有し、前記反射面の一部に前記リードフレームに達する少なくとも１つの切れ込み部が形成され、前記切れ込み部から前記筐体より熱抵抗の小さい粒子状フィラを含む樹脂が充填されていることを特徴とする発光デバイス。

A light-emitting element; a conductive lead frame on which the light-emitting element is mounted; and an opaque housing having an opening on an upper surface and exposing the light-emitting element on a bottom surface of the opening. At least one cut portion that reaches the lead frame is formed in a part of the reflection surface, and the cut portion is filled with a resin including a particulate filler having a lower thermal resistance than the housing. A light emitting device characterized by comprising:

JP2006015673A 2006-01-24 2006-01-24 Light emitting device Pending JP2007201028A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010040802A (en) * 2008-08-06 2010-02-18 Citizen Electronics Co Ltd Light-emitting device
JP2012054460A (en) * 2010-09-02 2012-03-15 Citizen Electronics Co Ltd Semiconductor light-emitting device
WO2012124587A1 (en) * 2011-03-16 2012-09-20 シャープ株式会社 Wavelength conversion member, production method for same, light-emitting device, illumination device, and headlight
JP2012204072A (en) * 2011-03-24 2012-10-22 Sharp Corp Light-emitting device, lighting device, and vehicular headlight
US10153403B2 (en) 2014-09-04 2018-12-11 Nichia Corporation Package and light-emitting device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010040802A (en) * 2008-08-06 2010-02-18 Citizen Electronics Co Ltd Light-emitting device
JP2012054460A (en) * 2010-09-02 2012-03-15 Citizen Electronics Co Ltd Semiconductor light-emitting device
WO2012124587A1 (en) * 2011-03-16 2012-09-20 シャープ株式会社 Wavelength conversion member, production method for same, light-emitting device, illumination device, and headlight
JP2012204072A (en) * 2011-03-24 2012-10-22 Sharp Corp Light-emitting device, lighting device, and vehicular headlight
US10153403B2 (en) 2014-09-04 2018-12-11 Nichia Corporation Package and light-emitting device
US10608147B2 (en) 2014-09-04 2020-03-31 Nichia Corporation Package and light-emitting device

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