JP2010040503A - 有機発光表示装置 - Google Patents
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- JP2010040503A JP2010040503A JP2008322198A JP2008322198A JP2010040503A JP 2010040503 A JP2010040503 A JP 2010040503A JP 2008322198 A JP2008322198 A JP 2008322198A JP 2008322198 A JP2008322198 A JP 2008322198A JP 2010040503 A JP2010040503 A JP 2010040503A
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- ODPYDILFQYARBK-UHFFFAOYSA-N 7-thiabicyclo[4.1.0]hepta-1,3,5-triene Chemical class C1=CC=C2SC2=C1 ODPYDILFQYARBK-UHFFFAOYSA-N 0.000 description 1
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- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- 229910003437 indium oxide Inorganic materials 0.000 description 1
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- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
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- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
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- 229920000647 polyepoxide Polymers 0.000 description 1
- -1 polyphenylene Polymers 0.000 description 1
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- 239000010453 quartz Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13069—Thin film transistor [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
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Abstract
【解決手段】基板110と、ゲート電極155、ソース電極176、及びドレイン電極177を含み、基板110上に形成された薄膜トランジスタ20と、ドレイン電極177の一部を露出させる接触孔182を有して薄膜トランジスタ20上に形成された平坦化膜180と、平坦化膜180上に形成され、接触孔182を通して薄膜トランジスタ20のドレイン電極177と連結される画素電極710と、画素電極710を露出させる開口部を有して平坦化膜180上に形成された画素定義膜190とを備えた有機発光表示装置であって、画素定義膜190と平坦化膜180とは互いに異なる色を有する。
【選択図】図2
Description
画素定義膜が有する色と平坦化膜が有する色とは減算混合状態で互いに補色関係であってもよい。
平坦化膜又は画素定義膜のうち赤色系の色はアクリル系の樹脂を含んで形成されてもよい。
ゲート電極、ソース電極、及びドレイン電極のうち一つ以上の電極と同じ層に同じ素材で形成された導電膜をさらに備え、導電膜の少なくとも一部は画素定義膜の下に配置されてもよい。
また、図面から様々な層及び領域を明確に表現するために厚さを拡大して示した。層、膜、領域、板などの部分が他の部分「上」または「上に」いるという時、これは他の部分「真上に」ある場合だけでなく、その間にまた他の部分がある場合も含む。逆にある部分が他の部分の「真上に」いるという時には、その間に他の部分がないことを意味する。
ここで、画素は画像を表示する最小単位を意味し、有機発光表示装置は複数の画素を通して画像を表示する。
図1に示すように、本発明の一実施形態による有機発光表示装置100は、一つの画素にスイッチング薄膜トランジスタ10、駆動薄膜トランジスタ20、蓄電素子80、及び有機発光素子(OLED)70を含む。有機発光表示装置100は一方向に沿って配置されるゲートライン151と、ゲートライン151と絶縁交差されるデータライン171及び共通電源ライン172をさらに含む。ここで、一つの画素はゲートライン151、データライン171及び共通電源ライン172を境界として定義できる。
蓄電素子80は層間絶縁膜160(図2に図示)を間において配置された第1維持電極158と第2維持電極178を含む。
このような構成によって、有機発光表示装置100は外光反射を抑制して、向上された視認性を有することができる。
駆動薄膜トランジスタ20の構成は前述した例に限定されずに、当該技術分野の専門家が容易に実施できる公知された構成で多様に変形できる。
また、平坦化膜180上には画素電極710を露出させる開口部を有する画素定義膜190が形成される。つまり、画素電極710は画素定義膜190の開口部に対応するように配置される。
このようにして、画素電極710、有機発光層720、及び共通電極730を含む有機発光素子70が形成される。
このような構成によって、有機発光表示装置100は外光反射を抑制して向上された視認性を有することができる。
10 スイッチング薄膜トランジスタ
20 駆動薄膜トランジスタ
70 有機発光素子
80 蓄電素子
110 基板
120 バッファ層
131 スイッチング半導体層
132 駆動半導体層
135 チャンネル領域
136 ソース領域
137 ドレイン領域
140 ゲート絶縁膜
151 ゲートライン
152 スイッチングゲート電極
155 駆動ゲート電極
158 維持電極
160 層間絶縁膜
171 データライン
172 共通電源ライン
173 スイッチングソース電極
174 スイッチングドレイン電極
176 駆動ソース電極
177 駆動ドレイン電極
178 維持電極
180 平坦化膜
182 接触孔
190 画素定義膜
710 画素電極
720 有機発光層
730 共通電極
Claims (7)
- 基板と、
ゲート電極、ソース電極、及びドレイン電極を含み、前記基板上に形成された薄膜トランジスタと、
前記ドレイン電極の一部を露出させる接触孔を有して前記薄膜トランジスタ上に形成された平坦化膜と、
前記平坦化膜上に形成され、前記接触孔を通して前記薄膜トランジスタのドレイン電極と連結される画素電極と、
前記画素電極を露出させる開口部を有して前記平坦化膜上に形成された画素定義膜と、を備え、
前記画素定義膜と前記平坦化膜とは互いに異なる色を有することを特徴とする有機発光表示装置。 - 前記画素定義膜が有する色と前記平坦化膜が有する色とは互いに混合されると各々の色より明度が低くなることを特徴とする請求項1に記載の有機発光表示装置。
- 前記画素定義膜が有する色と前記平坦化膜が有する色とは減算混合状態で互いに補色関係であることを特徴とする請求項2に記載の有機発光表示装置。
- 前記平坦化膜又は前記画素定義膜の一方は赤色(red)系の色を有し、他方は緑色(green)系の色をそれぞれ有することを特徴とする請求項3に記載の有機発光表示装置。
- 前記平坦化膜又は前記画素定義膜のうち赤色系の色はアクリル系の樹脂を含んで形成されることを特徴とする請求項4に記載の有機発光表示装置。
- 前記平坦化膜又は前記画素定義膜のいずれか一つは黒色系の色を有することを特徴とする請求項2に記載の有機発光表示装置。
- 前記ゲート電極、前記ソース電極、及び前記ドレイン電極のうち一つ以上の電極と同じ層に同じ素材で形成された導電膜をさらに備え、
前記導電膜の少なくとも一部は前記画素定義膜の下に配置されたことを特徴とする請求項1乃至6のいずれか一項に記載の有機発光表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0075483 | 2008-08-01 | ||
KR1020080075483A KR101427857B1 (ko) | 2008-08-01 | 2008-08-01 | 유기 발광 표시 장치 |
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Publication Number | Publication Date |
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JP2010040503A true JP2010040503A (ja) | 2010-02-18 |
JP4785911B2 JP4785911B2 (ja) | 2011-10-05 |
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JP2008322198A Active JP4785911B2 (ja) | 2008-08-01 | 2008-12-18 | 有機発光表示装置 |
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US (1) | US7911131B2 (ja) |
EP (1) | EP2149925B1 (ja) |
JP (1) | JP4785911B2 (ja) |
KR (1) | KR101427857B1 (ja) |
CN (1) | CN101640215B (ja) |
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KR101156434B1 (ko) * | 2010-01-05 | 2012-06-18 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
KR101822120B1 (ko) | 2010-09-28 | 2018-01-26 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치의 제조 방법 |
KR101982073B1 (ko) * | 2012-10-12 | 2019-05-27 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 유기 발광 표시 장치 |
TWI559064B (zh) * | 2012-10-19 | 2016-11-21 | Japan Display Inc | Display device |
KR102021027B1 (ko) * | 2013-02-28 | 2019-09-16 | 삼성디스플레이 주식회사 | 유기발광표시장치 |
KR102181238B1 (ko) | 2014-02-12 | 2020-11-23 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
KR102490881B1 (ko) * | 2014-12-26 | 2023-01-25 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR102324830B1 (ko) * | 2016-01-26 | 2021-11-12 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
CN106229328B (zh) * | 2016-08-12 | 2019-11-05 | 京东方科技集团股份有限公司 | 一种电致发光显示面板及其制作方法、显示装置 |
KR102582466B1 (ko) * | 2016-09-21 | 2023-09-25 | 삼성디스플레이 주식회사 | 표시 장치 |
EP3631859A4 (en) | 2017-06-01 | 2021-01-06 | BOE Technology Group Co., Ltd. | MATRIX SUBSTRATE, DISPLAY BOARD HAVING THIS LATEST AND METHOD OF MANUFACTURING A MATRIX SUBSTRATE |
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JP2004103334A (ja) * | 2002-09-06 | 2004-04-02 | Seiko Epson Corp | 有機el装置および電子機器 |
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EP1557891A3 (en) * | 2004-01-20 | 2006-10-04 | LG Electronics Inc. | Organic electroluminescent device and fabrication method thereof |
KR100721569B1 (ko) * | 2004-12-10 | 2007-05-23 | 삼성에스디아이 주식회사 | 칼라필터층을 갖는 유기전계발광소자 |
JP2007234301A (ja) * | 2006-02-28 | 2007-09-13 | Seiko Epson Corp | エレクトロルミネッセンス装置及び電子機器 |
KR100782458B1 (ko) * | 2006-03-27 | 2007-12-05 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
US7482186B2 (en) * | 2006-04-07 | 2009-01-27 | Chunghwa Picture Tubes, Ltd. | Method for fabricating active matrix organic light emitting diode display device and structure of such device |
KR100796618B1 (ko) * | 2007-01-04 | 2008-01-22 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
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JP2003017272A (ja) * | 2001-07-03 | 2003-01-17 | Sony Corp | 表示装置および表示装置の製造方法 |
JP2004103334A (ja) * | 2002-09-06 | 2004-04-02 | Seiko Epson Corp | 有機el装置および電子機器 |
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EP2149925B1 (en) | 2014-04-30 |
US20100026170A1 (en) | 2010-02-04 |
CN101640215B (zh) | 2011-11-30 |
CN101640215A (zh) | 2010-02-03 |
KR20100013799A (ko) | 2010-02-10 |
US7911131B2 (en) | 2011-03-22 |
EP2149925A3 (en) | 2012-07-11 |
EP2149925A2 (en) | 2010-02-03 |
KR101427857B1 (ko) | 2014-08-08 |
JP4785911B2 (ja) | 2011-10-05 |
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