JP2010033914A - Dielectric structure, and discharge device and fluid reformer using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a dielectric structure for easily controlling the discharging condition of plasma. <P>SOLUTION: The dielectric structure 1 includes a dielectric substrate 2, a first electrode 4a provided on a first surface S1 of the dielectric substrate 2, and a second electrode 4b provided inside the dielectric substrate 2 or on a second surface S2 opposite to the first surface S1 of the dielectric substrate 2. The dielectric structure 1 can generate plasma around the first electrode 4a when voltage is generated between the first electrode 4a and the second electrode 4b. The first electrode 4a has a plurality of protruded portions P protruded along the outer periphery in parallel to the first surface. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a dielectric structure used as, for example, a plasma generator, a discharge device using the dielectric structure, and a fluid reforming apparatus.

The plasma discharge technology is a technology used in a wide range of fields such as an ozone generator, an electrostatic precipitator, an air cleaner, and a harmful gas decomposition device. As a plasma generator for using this plasma discharge technique, for example, there is one having a plurality of flat electrodes arranged in one direction. In such a plasma generator, a high voltage is applied between the electrodes to generate a plasma field. When a fluid is passed through the plasma field, it becomes possible to decompose a substance in the fluid, and for example, it can be used for purification of exhaust gas. (For example, refer to Patent Document 1).
JP 2002-221026 A

  However, in the above plasma generator, the starting point of the plasma discharge cannot be controlled, and as a result, the plasma discharge may become non-uniform. That is, there is a problem that it is difficult to control the discharge state in the space between the flat electrodes.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a dielectric structure capable of easily controlling the discharge state of plasma, a discharge device using the dielectric structure, and a fluid modification. Is to provide quality equipment.

  The first dielectric structure of the present invention includes a dielectric substrate, a first electrode provided on the first surface of the dielectric substrate, and a first electrode facing the inside of the dielectric substrate or the first surface of the dielectric substrate. 2 and a second electrode provided on the surface. The dielectric structure can generate plasma around the first electrode when a voltage is generated between the first electrode and the second electrode. The first electrode has a plurality of protruding portions that protrude along the outer periphery in a direction parallel to the first surface.

  The second dielectric structure of the present invention includes a dielectric substrate, a first electrode provided on the first surface of the dielectric substrate, and a first electrode provided at a position opposite to the dielectric substrate with respect to the first surface. 2 electrodes. The dielectric structure can generate plasma around the first electrode when a voltage is generated between the first electrode and the second electrode. The first electrode has a plurality of protruding portions that protrude along the outer periphery in a direction parallel to the first surface.

  Preferably, in the first or second dielectric structure, the outer periphery of the first electrode has a sawtooth shape. This dielectric structure is referred to as a third dielectric structure.

  Preferably, in the first or second dielectric structure, the first surface of the dielectric substrate includes a plurality of first electrodes, and the second electrode includes a surface facing the plurality of first electrodes. Yes. This dielectric structure is referred to as a fourth dielectric structure.

  In any one of the first to fourth dielectric structures, preferably, in the dielectric substrate, a region in contact with the first outer periphery has a lower dielectric constant than other regions. This dielectric structure is referred to as a fifth dielectric structure.

A sixth dielectric structure of the present invention includes a plurality of dielectric substrates arranged along a first direction, a first electrode provided on a first surface of each dielectric substrate, and each dielectric substrate. And a second electrode provided on a second surface of the dielectric substrate facing the first surface of each dielectric substrate.
The first electrode and the second electrode face each other along the first direction. When a voltage is generated between the first electrode and the second electrode, plasma can be generated around the first electrode. The first electrode has a plurality of protrusions protruding in a direction parallel to the first surface along the outer periphery.

  A seventh dielectric structure of the present invention includes a plurality of dielectric substrates arranged along a first direction, a first electrode provided on a first surface of each dielectric substrate, and a dielectric substrate And a second electrode provided therebetween. The first electrode and the second electrode face each other along the first direction. When a voltage is generated between the first electrode and the second electrode, plasma can be generated around the first electrode. The first electrode has a plurality of protrusions protruding in a direction parallel to the first surface along the outer periphery.

  The discharge device of the present invention includes the dielectric structure according to any one of the first to seventh aspects, and a power source that applies a voltage between the first electrode and the second electrode of the dielectric structure.

  The fluid reforming apparatus of the present invention includes the discharge device and a supply source that supplies a fluid so as to be in contact with the first electrode.

  According to the dielectric structure of the present invention, the discharge state of plasma can be easily controlled.

  According to the discharge device of the present invention, a discharge device capable of easily controlling the discharge state of plasma can be realized.

  According to the fluid reforming apparatus of the present invention, it is possible to realize a fluid reforming apparatus that can easily control the discharge state of plasma and reform the fluid with higher efficiency.

  Hereinafter, embodiments of a dielectric structure according to the present invention will be described in detail with reference to the accompanying drawings.

(First embodiment)
FIG. 1 is a perspective view showing a configuration example of a dielectric structure according to the first embodiment of the present invention. FIG. 2A is a plan view of the dielectric structure of FIG. 1, and FIG. ) Is a cross-sectional view taken along line AA of FIG. 2A, and FIG. 2C is a plan perspective view of the dielectric structure of FIG. As shown in FIGS. 1 and 2, the dielectric structure 1 according to this embodiment includes a substrate 2 made of a dielectric. A first electrode 4 a is provided on the first surface S <b> 1 of the substrate 2. A second electrode 4 b is provided inside the substrate 2. The first electrode 4a and the second electrode 4b are linear electrodes facing each other with a dielectric interposed therebetween, and an upper surface of the first electrode 4a is applied by applying a voltage between the first electrode 4a and the second electrode 4b. It is possible to generate plasma in the discharge space 5. Here, a reference potential is supplied to the second electrode 4b, and an alternating voltage is applied between the first electrode 4a and the second electrode 4b.

  In the dielectric structure 1 according to the present embodiment, the first electrode 4a has a plurality of protrusions P protruding in the direction parallel to the first surface S1 along the outer periphery. Hereinafter, the first electrode 4a and the second electrode 4b may be simply referred to as “electrode 4” without being distinguished from each other.

  Further, the end face of the substrate 2 is provided with an external terminal 6a electrically connected to the first electrode 4a and an external terminal 6b electrically connected to the second electrode 4b. In the present specification, the substrate 2 refers to a portion excluding other components such as the electrode 4 formed therein, and the dielectric structure 1 includes a laminate of a plurality of ceramic green sheets and its structure as described later. When it is obtained by co-firing the electrode paste formed on the surface and inside of each ceramic green sheet, it refers only to the laminate.

  In the dielectric structure 1 according to the present embodiment, a high voltage is applied between the first electrode 4a and the second electrode 4b to generate plasma in the discharge space 5, and for example, exhaust gas or the like is generated in the discharge space 5. By passing the fluid, the chemical substances in the fluid are reacted and decomposed.

  Further, in the dielectric structure 1 according to the present embodiment, the projecting portion P of the first electrode 4a is the starting point of the plasma discharge. Thus, the protrusion P of the first electrode 4a becomes the starting point of the plasma discharge when the protrusion P of the first electrode 4a applies a voltage between the first electrode 4a and the second electrode 4b. This is because concentration of the electric field is likely to occur, and the potential of the protruding portion P in the first electrode 4a can be increased as compared with the potential of other portions. Thereby, in the discharge space 5, the protrusion part P of the 1st electrode 4a can be made into the starting point of plasma discharge.

  Further, since the protruding portion P protrudes in a direction parallel to the first surface S1, the flow of the fluid flowing through the discharge space is prevented as compared with the case where the protruding portion P protrudes from the first surface S1 toward the discharge space. , And corrosion by plasma and fluid of the protrusion can also be suppressed.

The substrate 2 is made of an electrically insulating material, for example, ceramics. Specifically, when the substrate 2 is manufactured, a ceramic green sheet is prepared, and then the prepared ceramic green sheet is appropriately punched, and a plurality of sheets are laminated as necessary, so that a high temperature (about 1300 to 1800) is obtained. Manufactured by baking at a temperature of ° C. An example of the electrical insulating material is an aluminum oxide sintered body (alumina ceramic). For example, a green sheet made of an aluminum oxide sintered body is prepared by adding an appropriate organic solvent and solvent to raw material powders such as alumina (Al ₂ O ₃ ), silica (SiO ₂ ), calcia (CaO), and magnesia (MgO). The mixture is mixed to obtain a slurry, and this is obtained by adopting a conventionally well-known doctor blade method or calendar roll method or the like and forming it into a sheet shape.

  When producing a laminate of ceramic green sheets, the ceramic green sheets are laminated and then subjected to pressure bonding. The pressure bonding is performed by applying a pressure of about 3.0 to 8.0 MPa, and heating is performed at 35 to 80 ° C. as necessary. Moreover, in order to obtain sufficient adhesiveness between the ceramic green sheets, an adhesive prepared by mixing a solvent and a resin binder may be used. In addition to the aluminum oxide sintered body, examples of the electrical insulating material include a mullite sintered body, an aluminum nitride sintered body, a cordierite sintered body, and a silicon carbide sintered body.

  The first electrode 4 a and the second electrode 4 b function as electrodes for generating plasma in the discharge space 5. The ends of the first electrode 4a and the second electrode 4b are led out to the vicinity of the outer surface of the substrate 2, and are electrically connected to the external terminals 6a and 6b directly or via an auxiliary electrode. The 1st electrode 4a and the 2nd electrode 4b consist of metal powder electrodes, such as tungsten, molybdenum, copper, or silver, and use the printing means, such as a screen printing method, in the predetermined position of the ceramic green sheet for the board | substrates 2. The electrode paste for the first electrode 4a and the second electrode 4b can be printed and applied, and simultaneously fired with the ceramic green sheet for the substrate 2, whereby a predetermined pattern can be formed inside and on the surface of the substrate 2. The electrode paste is manufactured by adding an organic binder and organic solvent to the main component metal powder, and if necessary, a dispersing agent, etc., and mixing and kneading with a kneading means such as a ball mill, a three-roll mill, or a planetary mixer. Is done. Glass or ceramic powder may be added to the electrode paste to match the sintering behavior of the ceramic green sheet or to increase the bonding strength with the substrate 2 after sintering.

  The areas of the first electrode 4a and the second electrode 4b are appropriately determined depending on the required plasma intensity, the voltage applied between the first electrode 4a and the second electrode 4b, and the like. For example, a fluid such as PM or an oxidizing component in exhaust gas from a diesel engine is purified.

  External terminals 6 a and 6 b are formed on the end surface of the substrate 2. The external terminals 6a and 6b function as conductive paths for applying a voltage from the external power source to the first electrode 4a and the second electrode 4b, and the first terminals 4a and the second electrodes 4b led to the surface of the substrate 2 Each is electrically connected. The external terminals 6a and 6b are made of a metal powder electrode such as tungsten, molybdenum, copper, or silver, and the external terminals 6a, 6b are formed at predetermined positions on the ceramic green sheet for the substrate 2 by using a printing means such as a screen printing method. The electrode paste for 6b can be printed and applied, and simultaneously fired with the ceramic green sheet for the substrate 2, so that the dielectric structure 1 can be formed at a predetermined position. The electrode paste for the external terminals 6a and 6b is prepared in the same manner as the electrode paste for the first electrode 4a and the second electrode 4b, but is prepared to have a viscosity suitable for printing depending on the amount of the organic binder and the organic solvent. .

  It is preferable to form a metal having excellent corrosion resistance such as nickel or gold on the exposed surfaces of the external terminals 6a and 6b. In addition, in order to suppress the external terminals 6a and 6b from being oxidatively corroded and to strengthen the bonding between the external terminals 6a and 6b and the power supply terminal of the external power supply, a nickel plating layer having a thickness of about 1 to 10 μm. And a gold plating layer having a thickness of about 0.1 to 3 μm are preferably formed sequentially. Note that the external terminals 6a and 6b may also be formed of a single layer of metal having excellent corrosion resistance, such as nickel or gold, when used at a high temperature, as described above.

  Alternatively, the external terminals 6a and 6b may be metal plates attached at predetermined positions after firing the ceramic green sheet for the substrate 2.

Then, when the power supply terminal of the external power supply is electrically connected to the external terminals 6a and 6b by means such as pressure contact or bonding and a voltage is applied to the first electrode 4a and the second electrode 4b through the external terminals 6a and 6b, the discharge space 5 can generate plasma. Thereby, since the fluid passing through the discharge space 5 passes through the plasma, it is reacted and decomposed to be purified. For example, under a reducing atmosphere, NO _X (nitrogen oxide) is decomposed by the reactions shown in the following formulas (1) and (2), and N ₂ and O ₂ are generated and purified.

2NO ₂ → 2NO + O ₂ (1)
2NO + O ₂ → N ₂ 2 + 2O ₂ (2)
In order to generate plasma in the discharge space 5, an alternating voltage having a high frequency is applied. The AC voltage to be applied is appropriately selected depending on the required plasma intensity and the like. For example, the frequency of the alternating voltage applied in the plasma generator for purifying fluids such as particulate matter (PM) and oxidizing components in the exhaust gas of a diesel engine is, for example, 1 kHz to 100 MHz.

  The voltage applied between the first electrode 4a and the second electrode 4b may be a pulse voltage in addition to the AC voltage. The AC voltage is not limited to a sine wave voltage, and may be a rectangular wave voltage or a square wave voltage.

  As shown in FIG. 3, the first electrode 4a may be disposed on the first surface S1 of the substrate 2, and the second electrode 4b may be disposed on the second surface S2 of the substrate 2 facing the first surface S1. . Even in such a case, the protrusion P in the first electrode 4a becomes the starting point of the plasma discharge.

  In addition, on the first surface S1 of the substrate 2, it is preferable that the dielectric constant around the protruding portion P of the first electrode 4a is lower than that of other regions. FIG. 4 is a plan view showing a configuration example of the dielectric structure 1 in such a case. In the configuration shown in FIG. 4, the dielectric film 7 is formed around the protrusion P on the first surface S <b> 1 of the substrate 2. The dielectric film 7 is made of a dielectric having a dielectric constant lower than that of the base 2. When the dielectric film 7 having a low dielectric constant is formed around the protrusion P in this way, plasma is likely to be generated around the protrusion P. This is because the electric field tends to concentrate due to the low dielectric constant. A dielectric film made of the same material as that of the dielectric film 7 may be formed between the first electrode 4a and the first surface S1 of the substrate.

  Further, the plurality of protrusions P of the first electrode 4a may have a sawtooth shape. FIG. 5 is a plan view showing a configuration example of the dielectric structure when the outer periphery of the first electrode 4a has a sawtooth shape. Thus, when the outer periphery of the first electrode 4a has a sawtooth shape, the tip of the projecting portion P is pointed and the electric field is more likely to concentrate, so that more plasma is generated around the outer periphery of the first electrode 4a. It tends to occur.

  The dielectric structure may be configured by arranging a plurality of substrates 2 in one direction. FIG. 6 is a cross-sectional view showing a configuration example of the dielectric structure in such a case. As shown in FIG. 6, the dielectric structure 11 includes a plurality of substrates 2 arranged along the first direction Z and a support portion 9 that supports the substrates 2 at a predetermined interval. The substrate 2 and the support portion 9 form cavities 5A, 5B, and 5C serving as discharge spaces. Here, the first plane S1 and the second plane S2 of the substrate 2 face each other along the first direction Z.

  Here, in the dielectric structure 11, when three or more substrates 2 are arranged, the substrates 2 other than the substrates 2 at both ends in the first direction Z are arranged on the first surface S1 and the second surface S2. One electrode 4a is provided, and a second electrode 4b is provided therein. In this way, since the first electrodes 4a are respectively disposed on the surfaces of the two substrates 2 adjacent to each other with the cavity 5 in between, the first electrode 4a can be generated in the cavity 5. The fluid passing through the cavity 5 can be more efficiently modified.

  In the dielectric structure 11 shown in FIG. 6, the second electrode 4b may be formed of a plurality of electrode layers. Here, FIG. 7 is a sectional view of the dielectric structure 15 in such a case. As shown in FIG. 7, in the substrates 2 other than the substrates 2 at both ends in the first direction Z, the second electrode 4b is composed of two electrode layers 4b1 and 4b2. According to this configuration, the distance between the electrode layer 4b1 and the first electrode 4a and the distance between the electrode layer and the first electrode 4a are set to be greater than the distance between the second electrode 4b and the first electrode 4a. Therefore, the effect of concentration of charges on the first electrode 4a can be further enhanced, and a stronger plasma can be generated in the region of the discharge space 5 than the dielectric structure 11 shown in FIG. be able to. Thus, when the second electrode 4b is composed of a plurality of layers, the thickness of the substrate 2 (the length in the first direction Z) even if the distance between the first electrode 4a and the second electrode 4b is reduced. Therefore, the strength of the substrate 2 can be maintained.

  The dielectric structure 1 is formed by simultaneously firing the ceramic green sheet on the substrate 2, and the first electrode 4a, the second electrode 4b, and the external terminals 6a and 6b are made of the electrode paste and the ceramic green sheet. It is preferably formed by firing at the same time. Thus, since the dielectric structure 1 is integrated by simultaneously firing the ceramic and the electrode paste, the dielectric structure 1 can be used even when used for a long time in an environment such as high temperature and high vibration. Thus, the shape of the discharge space 5 or the cavity 5 can be made more stable. Therefore, fluids such as PM and oxidizing components that pass through the discharge space 5 and the cavity 5 can be reacted more stably over a long period of time, decomposed, and favorably purified.

  In the above description, one first electrode 4a is provided on the surface S1 of the substrate 2, but a plurality of first electrodes 4a may be provided as shown in FIG. Providing the plurality of first electrodes 4a in this way makes it possible to increase the plasma density in the discharge space 5. In addition, when the plurality of first electrodes 4a are provided in this way, the discharge space 5 can be widened and the position of the starting point of the discharge space 5 can also be controlled. If the first electrodes 4a are arranged regularly, for example, at equal intervals, more uniform plasma can be obtained in the discharge space 5.

  Further, the substrate 2 provided with the plurality of first electrodes 4a on the surface S1 may be arranged in one direction to form a dielectric structure as shown in FIGS. In this case, the plasma discharge state in each cavity 5 can be set to a desired discharge state, for example, a uniform plasma state.

  Instead of the dielectric structure alone, another exhaust gas purification mechanism may be used together. For example, a filter or a catalyst may be attached before and after the dielectric structure, thereby further reducing the emission of PM, oxidizing components, etc. in the exhaust gas. Examples of such a filter include a ceramic DPF (Diesel Particulate Filter) and the like, and platinum or the like can be used as a catalyst.

(Second Embodiment)
FIG. 9 is a perspective view showing a configuration example of the dielectric structure 21 according to the second exemplary embodiment of the present invention. 10A is a top view of the substrate 2 of FIG. 9, FIG. 10B is a cross-sectional view of the dielectric structure 21 shown in FIG. 9, and FIG. 10C is a cross-sectional view showing a modification of FIG. It is. In FIG. 10A, the second electrode 4b is also shown in order to clarify the positional relationship between the first electrode 4a and the second electrode 4b. As shown in FIGS. 9 and 10, the dielectric structure 21 according to the present embodiment has a substrate 22 made of a dielectric having a surface S21 opposite to S1 of the substrate 2, and the surface S21 Two electrodes 4b are provided. That is, the second electrode 4b is provided at a position opposite to the dielectric substrate 2 with respect to the first surface S1.

  When a voltage is applied between the first electrode 4a and the second electrode 4b with the first electrode 4a and the second electrode 4b facing each other, plasma is generated between the first electrode 4a and the second electrode 4b.

  The dielectric structure 21 according to the present embodiment also has the protruding portion P on the outer periphery of the first electrode 4a provided on the first surface S1 of the base body 2. Therefore, the electric field concentrates on the protruding portion P. The outer periphery of the first electrode 4a can be the starting point of the plasma. Thereby, it becomes easier to generate plasma around the outer periphery of the first electrode 4a.

  Further, as shown in FIG. 10C, the second electrode 4 b may be provided inside the substrate 22. When arranged in this way, the second electrode 4b can be prevented from being corroded by plasma and fluid.

  Further, the second electrode 4b may be arranged alone without being provided on the surface and inside of the dielectric substrate 22. In that case, the 2nd electrode 4b can be hold | maintained by connecting the one part to the board | substrate 2 or connecting to another member.

  Furthermore, a plurality of first electrodes 4a may be provided on the surface S1, and a second electrode 4b may be provided so as to face each first electrode 4a. In this case, the second electrode 4b may be a single flat electrode.

  Alternatively, the dielectric structure may be formed by arranging the substrate 2 provided with the first electrode 4a on the first surface S1 in one direction and providing the second electrode 4b between the substrates 2. For example, the dielectric structure may be formed by alternately arranging the substrate 2 on which the first electrode 4a is formed and the substrate 22 or the second electrode 4b on which the second electrode 4b is formed. As shown in FIG. 4, the dielectric structure may be formed by alternately arranging the substrate 2 on which the first electrode 4a is formed and the second electrode 4b alone.

(Third embodiment)
FIG. 12 is a conceptual diagram showing a structural configuration of the reaction apparatus 100 according to the third embodiment of the present invention. In addition, about the structure similar to the dielectric structure 11 by 1st Embodiment, the same code | symbol as the electroconductive structure 11 by 1st Embodiment is attached | subjected and description is abbreviate | omitted.

  The reaction apparatus 100 includes the dielectric structure 1 according to the first embodiment, and is configured as an apparatus that processes and discharges a fluid to be processed by the dielectric structure 1. The fluid to be treated is, for example, exhaust gas of an internal combustion engine of an automobile, and NOx is reformed by a chemical change in the cavity 5 (hereinafter also referred to as “discharge space”). Further, for example, the fluid to be treated is chlorofluorocarbon used as a cooling medium in a refrigerator or an air conditioner, and chlorofluorocarbon is decomposed by a chemical change in the cavity 5. In the following description, a portion of the reaction apparatus 100 other than the dielectric structure 11 may be referred to as a reaction apparatus main body 101.

  The reaction apparatus main body 101 includes a fluid source 103 that supplies a fluid to be processed, a supply pipe 105 (an example of a supply unit) that guides the fluid to be processed from the fluid source 103 to the dielectric structure 11, and the dielectric structure 11. A discharge pipe 107 that discharges the treated fluid, a treated fluid pump 109 for controlling the flow of the treated fluid, a coolant source 111 that supplies a cooling medium, and a dielectric structure from the coolant source 111 11, a supply flow pipe 50A (an example of a cooling unit) that guides the cooling medium to 11, a discharge flow pipe 50B that guides the cooling medium from the dielectric structure 11 to the refrigerant source 111, and cooling for controlling the flow of the cooling medium. A medium pump 113 (an example of a cooling unit).

  The fluid source 103 generates a fluid to be processed such as an internal combustion engine of an automobile that discharges exhaust gas as the fluid to be processed. Alternatively, the fluid source 103 holds a fluid to be processed such as a tank that holds a cooling medium of a used refrigerator or an air conditioner.

  One end side of the supply pipe 105 communicates with a space for generating or holding a fluid to be processed of the fluid source 103, and the other end side communicates with the cavity 5 of the dielectric structure 11. The dielectric structure 11 side of the supply pipe 105 corresponds to the number of the cavities 5 and is referred to as a first branch part 105aA, a second branch part 105aB, a third branch part 105aC (hereinafter simply referred to as “branch part 105a”. The first branch part 105aA to the third branch part 105aC communicate with the cavity 5A to the cavity 5C, respectively.

  One end side of the discharge pipe 107 communicates with the cavity 5 of the dielectric structure 11 from the side opposite to the supply pipe 105, and the other end side is opened to the atmosphere, or holds the processed fluid after processing. It communicates with a space (not shown) for performing another process on the fluid to be processed later. The dielectric tube 11 side of the discharge pipe 107 corresponds to the number of the cavities 5 and is referred to as a first branch portion 107aA, a second branch portion 107aB, and a third branch portion 107aC (hereinafter simply referred to as “branch portion 107a”. The first branch portion 107aA to the third branch portion 107aC communicate with the cavity 5A to the cavity 5C, respectively. Note that the discharge pipe 107 may be omitted. For example, the processed fluid after processing may be directly discharged from the cavity 5 to the atmosphere.

  The supply pipe 105 and the discharge pipe 107 are formed of an appropriate material such as metal or resin. The supply pipe 105 and the discharge pipe 107 may or may not have flexibility. The branch part 105a and the branch part 107a are connected to the cavity 5 by, for example, bringing the ends of the branch part 105a and the branch part 107a into contact with the side surface of the substrate 2 that does not have the opening of the cavity 5 and bonding. This is performed by fixing the branch portion 105a and the branch portion 107a and the substrate 2 with an appropriate fixing member such as an agent or a screwing member. The branch portion 105a and the branch portion 107a are fitted and inserted into the cavity 5, or a protruding annular portion such as an outflow connection pipe is formed integrally with the substrate 2 at the end of the cavity 5, and the protruding portion is branched. It may be performed by fitting and inserting into the part 105a and the branch part 107a.

  The fluid pump 109 to be processed is provided in at least one of the supply pipe 105 and the discharge pipe 107. FIG. 12 illustrates the case where the supply pipe 105 is provided. When the fluid to be processed is caused to flow by the power of the fluid source 103, such as when the fluid source 103 is an internal combustion engine, the pump for fluid to be processed 109 may be omitted. In addition, the pump for fluid to be processed 109 can be provided in the dielectric structure 11. The fluid pump 109 to be processed may be constituted by an appropriate pump such as a rotary pump or a reciprocating pump.

  The refrigerant source 111 includes, for example, a heat exchanger, and lowers the temperature of the cooling medium from the discharge flow pipe 50B by the heat exchanger and supplies it to the supply flow pipe 50A. Note that the coolant source 111 need only be able to supply a cooling medium, and may not receive the cooling medium from the discharge flow pipe 50B and circulate the cooling medium. That is, the cooling medium from the discharge flow pipe 50 </ b> B may be discharged to a location different from the refrigerant source 111. For example, when tap water is used as the cooling medium, the water from the discharge flow pipe 50 </ b> B may be discharged to a location different from the water source as the refrigerant source 111. Conversely, when the cooling medium is circulated, the refrigerant source 111 may be omitted.

  The supply flow pipe 50A has one end communicating with the refrigerant source 111 and the other end communicating with the cavity 5 (flow path) of the dielectric structure 11 via the inflow connection pipe as described above. Yes. One end of the discharge flow pipe 50B communicates with the cavity 5 of the dielectric structure 11 through an outflow connection pipe provided integrally with the substrate 2, and the other end communicates with the refrigerant source 111. Yes. The flow tube 50 is formed of an appropriate material such as metal or resin. The flow tube 50 may or may not have flexibility.

  The cooling medium pump 113 is provided in at least one of the supply flow pipe 50A and the discharge flow pipe 50B. FIG. 12 illustrates a case where the supply flow pipe 50A is provided. Note that the cooling medium pump 113 is omitted when the coolant source 111 is a tank in a high position and power for flowing the cooling medium appropriately can be obtained, for example, the cooling medium can flow by gravity. Also good. The cooling medium pump 113 can also be provided in the dielectric structure 11. The cooling medium pump 113 may be configured by an appropriate pump such as a rotary pump or a reciprocating pump.

  FIG. 12 is a block diagram showing the configuration of the electric system of the reaction apparatus 100. Here, as an example, a temperature detection element 115 for detecting the temperature of the substrate 2 or the support 9 and a heater 116 for heating the substrate 2 are provided inside the substrate 2 or the support 9. To do. Further, external terminals 6 a and 6 b for applying a voltage to the electrode 4, a sensor terminal 118 for outputting an electric signal from the temperature detection element 115, and a heater for supplying power to the heater 116 on the surface of the substrate 2. Assume that the terminals 119 are exposed.

  The reactor main body 101 includes an electrode terminal 117, a sensor terminal 118, an apparatus-side electrode terminal 141 connected to the heater terminal 119, an apparatus-side sensor terminal 143, and an apparatus-side heater terminal 145. The dielectric structure 11 is driven and controlled by power supplied from the reaction device main body 101 through these terminals. Specifically, it is as follows.

  The power supply unit 121 is configured to include, for example, a battery, and converts DC power from the battery into AC power or DC power having an appropriate voltage for supply. Alternatively, AC power having a commercial frequency is converted into AC power or DC power having an appropriate voltage and supplied. The power of the power supply unit 121 is supplied to the control unit 123, the discharge control unit 125, the temperature detection unit 127, the heater driving unit 129, the fluid pump 109 to be processed, and the cooling medium pump 113.

  The discharge control unit 125 converts the power supplied from the power supply unit 121 into AC power having a voltage corresponding to the control signal from the control unit 123, and converts the converted power into the device-side electrode terminal 141 and the electrode terminal. It is supplied to the electrode 4 through 117. For example, the discharge control unit 125 includes a power supply circuit such as an inverter or a transformer. In the discharge space 5, an amount of discharge corresponding to the voltage applied by the discharge control unit 125 is performed.

  For example, when the temperature detection element 115 is configured by a resistor whose resistance value changes due to a temperature change, the temperature detection unit 127 converts the power supplied from the power supply unit 121 into DC power or AC power of an appropriate voltage. Then, the converted electric power is supplied to the temperature detection element 115 via the device-side sensor terminal 143 and the sensor terminal 118. Then, the temperature detection element 115 detects the resistance value of the temperature detection element 115 and outputs a signal corresponding to the detected resistance value to the control unit 123. The temperature detection element 115 may calculate the temperature of the temperature detection element 115 based on the detected resistance value and output a signal corresponding to the calculated value to the control unit 123.

  The heater drive unit 129 converts the power supplied from the power supply unit 121 into DC power or AC power having a voltage corresponding to a control signal from the control unit 123, and converts the converted power into the apparatus-side heater electrode 145 and the heater. It is supplied to the heater 116 via the electrode 119 for use. The heater driving unit 129 includes a power supply circuit such as a rectifier circuit or a transformer, for example. The heater 116 generates heat in an amount corresponding to the voltage applied by the heater driving unit 129.

  Each of the fluid pump 109 and the cooling medium pump 113 includes, for example, a motor as a pump drive source and a motor driver that drives the motor, although not particularly illustrated. The electric power supplied from the power supply unit 121 is converted into AC power or DC power having a voltage corresponding to a control signal from the control unit 123 and applied to the motor. The motor rotates at the number of rotations corresponding to the applied voltage, and consequently a force corresponding to the applied voltage is applied to the fluid to be processed and the cooling medium.

  The input unit 131 receives a user operation and outputs a signal corresponding to the user operation to the control unit 123. For example, the input unit 131 receives a drive start operation, a drive stop operation, various temperature setting operations related to temperature setting and flow rate control of the reaction apparatus 100, and outputs a signal corresponding to the operation. The input unit 131 includes, for example, a control panel including various switches and a keyboard.

  For example, although not particularly illustrated, the control unit 123 is configured by a computer including a CPU, a ROM, a RAM, and an external storage device. The control unit 123 outputs control signals to the discharge control unit 125, the heater driving unit 129, the fluid to be processed pump 109, and the cooling medium pump 113 based on signals from the temperature detection unit 127 and the input unit 131.

  For example, when a signal corresponding to a driving start operation of the reaction apparatus 100 is input from the input unit 131, the control unit 123 sends a control signal to the discharge control unit 125 so as to start supplying power to the electrode 4. When a signal corresponding to a drive stop operation of the reaction apparatus 100 is input from the input unit 131, a control signal is output to the discharge control unit 125 so as to stop the supply of power to the electrode 4.

  In addition, for example, the control unit 123 determines that the temperature detected by the temperature detection unit 127 does not reach a predetermined target temperature set as a temperature at which the dielectric structure 11 can efficiently generate plasma. When the determination is made, a control signal is output to the discharge controller 125 so that the power supplied to the electrode 4 is increased more than the power supplied during normal operation, and the dielectric structure 11 reaches the target temperature. Outputs a control signal to the discharge controller 125 so that the power supplied to the electrode 4 is maintained at the power supplied during normal operation.

  In addition, for example, the control unit 123 determines that the temperature detected by the temperature detection unit 127 does not reach a predetermined target temperature set as a temperature at which the dielectric structure 11 can efficiently generate plasma. If it is determined, a control signal is output to the heater drive unit 129 so that power is supplied to the heater 116 or power supplied to the heater 116 is increased. When the dielectric structure 11 reaches the target temperature, a control signal is sent to the heater driving unit 129 so that the power supplied to the heater 116 is reduced or the supply of power to the heater 116 is stopped. Output.

  Further, for example, the control unit 123 may detect the temperature detected by the temperature detection unit 127 and the temperature at which the dielectric structure 11 can efficiently generate plasma, or the dielectric structure 11 or the reaction apparatus main body. 101 is compared with a predetermined target temperature set as a temperature at which safe operation is performed. When the detected temperature is higher than the target temperature, the flow rate of the cooling medium is increased, and when the detected temperature is lower, the flow rate of the cooling medium is increased. A control signal is output to the cooling medium pump 113 so as to be lowered.

  In addition, for example, the control unit 123 determines that the temperature detected by the temperature detection unit 127 does not reach a predetermined target temperature set as a temperature at which the dielectric structure 11 can efficiently generate plasma. If it is determined that the flow rate of the fluid to be processed is low and it is determined that the flow rate has been reached, a control signal is output to the pump 109 for fluid to be processed so as to increase the flow rate of the fluid to be processed.

  Further, for example, the control unit 123 compares the temperature detected by the temperature detection unit 127 with a predetermined temperature range set as a temperature at which the dielectric structure 11 and the reaction apparatus main body 101 are safely operated. When the detected temperature exceeds a set temperature range, a control signal is output so as to notify the occurrence of abnormality to a notifying unit such as a display device or a speaker (not shown).

  According to the third embodiment described above, the reactor 100 generates plasma in the dielectric structure 11 of the first embodiment, the supply pipe 105 that supplies the fluid to be processed to the cavity 5, and the cavity 5. And the discharge pipe 107 for discharging the reaction fluid obtained by chemically changing the fluid to be processed, as in the first embodiment, the improvement in the durability of the dielectric structure 11 and the dielectric The effect of reducing the size of the conductive structure 11 is obtained, and as a result, the durability of the reactor 100 is improved and the effect of size reduction is obtained.

  The present invention can be variously modified without departing from the gist of the present invention. For example, in the above description, the modification of exhaust gas such as diesel engines used in automobiles, ships, generators, etc. is described. You may apply. For example, the present invention can be applied to an air cleaning device used for deodorization, dioxin decomposition, pollen decomposition, etc., plasma etching, a dielectric structure and a reaction device mounted on a thin film device or the like. Moreover, it is possible to apply to the dielectric structure for reacting or decomposing the fluid which passes the cavity 5 with plasma, and its reaction apparatus.

It is a perspective view which shows the structural example of the dielectric structure by the 1st Embodiment of this invention. 1A is a plan view of the dielectric structure of FIG. 1, FIG. 1B is a cross-sectional view taken along line AA of FIG. 1A, and FIG. 1C is a plan perspective view of the dielectric structure of FIG. is there. It is sectional drawing which shows the modification of the dielectric structure by 1st Embodiment. It is a top view which shows the modification of the dielectric structure by 1st Embodiment. It is a top view which shows the modification of the dielectric structure by 1st Embodiment. It is sectional drawing which shows the modification of the dielectric structure by 1st Embodiment. It is sectional drawing which shows the modification of the dielectric structure by 1st Embodiment. It is a top view which shows the modification of the dielectric structure by 1st Embodiment. It is a perspective view which shows the structural example of the dielectric structure by the 2nd Embodiment of this invention. 9A is a top view of the substrate 2 in FIG. 9, FIG. 9B is a cross-sectional view of the dielectric structure 21 shown in FIG. 9, and FIG. 9C is a cross-sectional view showing a modification of FIG. . It is sectional drawing which shows the modification of the dielectric structure by 2nd Embodiment. It is a conceptual diagram which shows the structural structure of the reaction apparatus which concerns on the 3rd Embodiment of this invention. It is a block diagram which shows the structure of the electric system of the reactor of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Dielectric structure 2 ... Base | substrate 4a, 4b ... Electrode 5 ... Discharge space 6a, 6b ... External terminal

Claims (9)

A dielectric substrate;
A first electrode provided on a first surface of the dielectric substrate;
A second electrode provided inside the dielectric substrate or on a second surface facing the first surface of the dielectric substrate,
A dielectric structure capable of generating plasma around the first electrode when a voltage is generated between the first electrode and the second electrode;
The first electrode is a dielectric structure having a plurality of protrusions protruding in a direction parallel to the first surface along an outer periphery. A dielectric substrate;
A first electrode provided on a first surface of the dielectric substrate;
A second electrode provided at a position opposite to the dielectric substrate with respect to the first surface,
A dielectric structure capable of generating plasma around the first electrode when a voltage is generated between the first electrode and the second electrode;
The first electrode is a dielectric structure having a plurality of protrusions protruding in a direction parallel to the first surface along an outer periphery. 3. The dielectric structure according to claim 1, wherein an outer periphery of the first electrode has a sawtooth shape. 4. The said 1st surface of the said dielectric substrate has several said 1st electrode, The said 2nd electrode is provided with the surface facing the said several 1st electrode. Dielectric structure. 5. The dielectric structure according to claim 1, wherein a region in contact with the outer periphery of the first electrode in the dielectric substrate has a dielectric constant lower than that of other regions. A plurality of dielectric substrates arranged along a first direction;
A first electrode provided on a first surface of each dielectric substrate;
A second electrode provided on the inside of each dielectric substrate or on a second surface facing the first surface of each dielectric substrate, and
The first electrode and the second electrode are opposed along the first direction,
A dielectric structure capable of generating plasma around the first electrode when a voltage is generated between the first electrode and the second electrode;
The first electrode is a dielectric structure having a plurality of protrusions protruding in a direction parallel to the first surface along an outer periphery. A plurality of dielectric substrates arranged along a first direction;
A first electrode provided on a first surface of each dielectric substrate;
A second electrode provided between the dielectric substrates,
The first electrode and the second electrode are opposed along the first direction,
A dielectric structure capable of generating plasma around the first electrode when a voltage is generated between the first electrode and the second electrode;
The first electrode is a dielectric structure having a plurality of protrusions protruding in a direction parallel to the first surface along an outer periphery. The dielectric structure according to any one of claims 1 to 7,
A discharge device comprising: a power supply for applying a voltage between the first electrode and the second electrode of the dielectric structure. A discharge device according to claim 8,
A fluid reforming apparatus comprising: a supply source that supplies fluid so as to be in contact with the first electrode.

Images