KR101950065B1 - Plasma generating film manufacturing method - Google Patents

Plasma generating film manufacturing method Download PDF

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KR101950065B1
KR101950065B1 KR1020160001521A KR20160001521A KR101950065B1 KR 101950065 B1 KR101950065 B1 KR 101950065B1 KR 1020160001521 A KR1020160001521 A KR 1020160001521A KR 20160001521 A KR20160001521 A KR 20160001521A KR 101950065 B1 KR101950065 B1 KR 101950065B1
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electrode
plasma
insulating film
film
plasma generating
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KR1020160001521A
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Korean (ko)
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KR20170082292A (en
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김상유
정규선
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한양대학교 산학협력단
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H2001/466—

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)

Abstract

A plasma generating apparatus is disclosed. The plasma generator comprises a power supply; And a plasma generating film on which a first electrode grounded on one surface of the insulating film is formed and a second electrode connected to the power source is formed on the other surface, wherein the insulating film is provided as a polyimide material.

Description

[0001] The present invention relates to a plasma generating film manufacturing method,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a plasma generating film producing method, and more particularly, to a plasma generating film producing method characterized by the generation of carbon dioxide on atmospheric pressure.

Plasma has been widely used for the surface treatment of semiconductors, display devices, and various parts, and has expanded its applicability to become a fusion technology field used in biotechnology research, medical care, air cleaning, and incinerator. Particularly, the field of medicine is expanding such as tooth whitening, cancer cell death, blood coagulation speed promotion, skin whitening, wound healing, etc. In the case of a laser which has been used mainly in the past, an image due to heat damage and a wide There is a fundamental disadvantage in that it is impossible to uniformly treat the area. However, in the case of plasma, there is no heat damage, and according to the plasma generating apparatus, it is possible to uniformly and efficiently treat a large area of treatment area.

Oxygen radicals such as ultraviolet rays (UV) and ozone generated in the plasma, nitrogen oxides such as nitrogen monoxide, currents and charge carriers are caused to increase in cell immunity, sterilization, cancer cell necrosis and blood circulation .

Conventional plasma generators mainly generate ozone and nitrogen oxides. However, a device for generating a high concentration of carbon dioxide is not known. High concentrations of carbon dioxide inhalation cause respiratory problems, but when absorbed into skin tissue, blood vessels, muscles, etc., the partial pressure of oxygen in the blood vessels increases, resulting in lipolysis and metabolic increase. In particular, in cases of wound, the main cause of the wound not recovering is the decrease of oxygen concentration in the wound tissue. Therefore, methods of treating the wound by inducing the increase of oxygen concentration by injecting carbon dioxide from the outside have been introduced. Therefore, there is a demand for a medical atmospheric-pressure plasma generator capable of generating carbon dioxide at a concentration of at least carbon dioxide contained in air at atmospheric pressure.

In the conventional plasma generating apparatus, when plasma is generated without supplying nitrogen gas from the outside, nitrogen oxide is generated due to the content of nitrogen contained in the air, so that it is difficult to expect a high concentration of nitrogen oxide.

Further, when the conductive layer such as copper is adhered to the dielectric body through the adhesive layer made of the adhesive, there is a risk that the conductive layer detaches from the dielectric due to a decrease in the chemical performance of the adhesive when the temperature of the plasma generating device is increased. In contrast, in the prior art in which a conductive layer is formed only by sputtering, atomic layer deposition, or ion plating on a dielectric, the height of the conductive layer (several tens of nm) is much smaller than the diameter of the filament in the generated plasma (several tens of μm) In this case, the physicochemical etching of the conductive layer and the dielectric is very accelerated by the filament, and the disadvantage is that it generates a large number of particles.

The present invention provides a plasma generating apparatus capable of generating carbon dioxide at a high concentration using plasma generation.

Further, the present invention provides a plasma generator capable of controlling the concentration of generated ozone, nitrogen oxide, and carbon dioxide by controlling the temperature of the plasma generator.

A plasma generator according to the present invention includes a power source; And a plasma generating film on which a first electrode grounded on one surface of the insulating film is formed and a second electrode connected to the power source is formed on the other surface, wherein the insulating film is provided as a polyimide material.

The insulating film may have a thickness of 25 to 38 mu m.

Also, the concentration of carbon dioxide produced in the plasma generating film may be greater than the concentration of carbon dioxide in the atmosphere.

The step of forming the first electrode and the second electrode on the insulating film may include: a step of performing nitrogen ion plating on one surface of the insulating film; Oxygen plasma processing the other surface of the insulating film; Forming a conductive thin film on both surfaces of the insulating film through a sputtering process; A step of increasing the thickness of the conductive thin film through an electrolytic plating process; And forming a pattern on at least one thin film of the conductive thin film.

In addition, protrusions are formed on the surface of one of the first electrode and the second electrode, and the protrusions may have any one of triangular, rectangular, and semicircular shapes.

In addition, the electrode having the above shape may have a size of 0.1 to 1 mm.

At least one of the first electrode and the second electrode may be provided in a predetermined pattern, and the electrode pattern may be provided in a smooth curve in a region where the direction is switched.

The width of the electrode pattern may be 0.2 to 2 mm.

In addition, the distance between the electrode patterns of the electrode may be larger than twice the electric field area generated in the electrode pattern.

According to the present invention , gases such as ozone, nitrogen oxides, carbon monoxide, and carbon dioxide, ultraviolet rays and the like are generated from plasma to remove harmful bacteria and viruses, promote skin regeneration, promote lipolysis, increase blood vessels , It can give a high therapeutic effect to human skin through induction .

1 is a view showing a plasma generator according to an embodiment of the present invention.
2 is a view illustrating a process of forming electrodes on both surfaces of an insulating film according to an embodiment of the present invention.
3 is a view showing various shapes of electrodes formed according to an embodiment of the present invention.
FIG. 4 is a graph of radicals generated in a film-type plasma generator according to an embodiment of the present invention, measured by Fourier transform infrared spectroscopy (FT-IR).
5 is a view showing one surface of a plasma generating film according to another embodiment of the present invention.
6 is a photograph showing a plasma generating film according to another embodiment of the present invention.
7 is an SEM photograph showing a state in which dielectric breakdown occurs on the surface of the insulating film and the electrode.
8 is a flowchart showing a plasma generation control method according to an embodiment of the present invention.
FIG. 9 is a graph illustrating changes in Vpp value according to an exemplary embodiment of the present invention.
10 is a SEM photograph showing a significant amount of etching on the surface of the electrode and the dielectric after the generation of the plasma for 30 seconds in the plasma generator having the electrode height of 100 nm according to the conventional method (when the height of the copper electrode is 100 nm, Electrode and dielectric surface after formation)
11 is a SEM photograph showing electrodes and a dielectric surface after a 30 second plasma is generated in a plasma generator having an electrode height of 8.6 μm according to the present invention. (When the height of a copper electrode is 8.6 .mu.m, And dielectric surfaces)

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical spirit of the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

In this specification, when an element is referred to as being on another element, it may be directly formed on another element, or a third element may be interposed therebetween. Further, in the drawings, the thicknesses of the films and regions are exaggerated for an effective explanation of the technical content.

Also, while the terms first, second, third, etc. in the various embodiments of the present disclosure are used to describe various components, these components should not be limited by these terms. These terms have only been used to distinguish one component from another. Thus, what is referred to as a first component in any one embodiment may be referred to as a second component in another embodiment. Each embodiment described and exemplified herein also includes its complementary embodiment. Also, in this specification, 'and / or' are used to include at least one of the front and rear components.

The singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise. It is also to be understood that the terms such as " comprises "or" having "are intended to specify the presence of stated features, integers, Should not be understood to exclude the presence or addition of one or more other elements, elements, or combinations thereof. Also, in this specification, the term "connection " is used to include both indirectly connecting and directly connecting a plurality of components.

In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

1 is a view showing a plasma generator according to an embodiment of the present invention.

Referring to Figure 1, the plasma generator 100 generates a plasma at atmospheric pressure. The generated plasma can be used for medical purposes. Plasma can be used to treat skin such as skin and bacteria, remove bacteria and bacteria in organs such as stomach, esophagus, mouth, and large intestine, and promote skin regeneration.

The plasma generating apparatus 100 includes a plasma generating film 110, a power source 120, a transformer 130, a Vpp measuring sensor 140, and a controller 150.

The plasma generating film 110 generates a plasma. The plasma generating film 110 is provided in a structure in which the first electrode 112 and the second electrode 113 are formed on both surfaces of the insulating film 111, and generates a plasma. The insulating film 111 has a thickness of several tens of micrometers (um). According to the embodiment, the insulating film 111 may have a thickness of 25 to 38 mu m. The insulating film 111 is provided as a polymer-based film. The insulating film 111 may be made of a material such as polyimide (PI), polyethylene terephthalate (PET), polyethersulfone, polycarbonate, or the like. According to the embodiment, the insulating film 111 is made of polyimide material. Polyimide is most suitable as a dielectric of the plasma generating film 110 because it has high adhesion and high glass transition temperature with the metal and nonmetal materials that are in contact with other polymer materials. Unlike polytetrafluoroethylene (PTFE) containing fluorine and polyvinyl chloride (PVC) containing chlorine, since polyimide does not contain halogen element, it is most suitable for medical use because harmful substances are not generated.

First and second electrodes 112 and 113 are formed on both sides of the insulating film 111, respectively. The first and second electrodes 112 and 113 are made of a conductive material. According to the embodiment, the first ac second electrodes 112 and 113 may be provided with copper.

2 is a view illustrating a process of forming electrodes on both surfaces of an insulating film according to an embodiment of the present invention.

2, the step of forming electrodes on both surfaces of the insulating film includes a step of performing heat treatment in a vacuum environment, a step of performing nitrogen ion beam treatment on one surface of the insulating film, a step of performing oxygen plasma treatment on the other surface of the insulating film, A step of forming a conductive thin film on both surfaces of the insulating film through a sputtering process, a step of increasing the thickness of the conductive thin film through an electrolytic plating process, and a step of forming a pattern on at least one of the conductive thin films formed on both surfaces of the insulating film do. The above-described processes can be sequentially performed. According to the embodiment, the heat treatment process may be performed in an atmosphere at 100 ° C., and the conductive thin film may include nickel, chromium, and copper thin films, and may be sequentially formed on both sides of the insulating film. And the pattern formation process includes a dry or wet etching process.

The manufacturing process of the electrodes 112 and 113 can form a very dense roughness between the insulating film 111 and the electrodes 112 and 113 to minimize the variation in the capacitance of the plasma generating device and thereby provide reliability .

3 is a view showing various shapes of electrodes formed according to an embodiment of the present invention.

Referring to FIG. 3, at least one of the first electrode 112 and the second electrode 113 has a protrusion 114. The protrusion 114 has a shape of a triangle, a rectangle, or a half circle, and protrudes upward from the surface of the electrodes 112 and 113. The protrusion 114 may have a size of 0.1 to 1 mm. In FIG. 3, the triangular, rectangular, and semicircular shapes are shown in one drawing to show various shapes of the protruding portions 114, but any one of the triangular, rectangular, As shown in FIG.

The electrodes 112 and 113 having the above-described shapes can generate a strong electric field at the protruding portion 114 during the plasma discharge to form a high concentration of radicals. Here, carbon monoxide which helps skin regeneration occurs at a relatively high concentration, and nitrogen implanted into the surface of the insulating film 111 and the layer between the surface and the surface of several tens of nm from the surface reacts with excited radicals to form nitrogen oxides. Thereby increasing the nitrogen monoxide concentration.

FIG. 4 is a graph of oxide gas generated in a plasma generating film according to an embodiment of the present invention, measured by Fourier transform infrared spectroscopy (FT-IR).

The red graph is a graph in which carbon dioxide and moisture contained in the atmosphere are measured. The black graph is a graph showing oxide gasses occurring in a plasma generating film according to an embodiment of the present invention.

As shown in the graph of FIG. 4, in the plasma generating film according to the present invention, it can be seen that the concentration of carbon dioxide is higher than the concentration of carbon dioxide contained in air, and the generation of carbon monoxide (CO) can also be confirmed.

5 is a view showing one surface of a plasma generating film according to another embodiment of the present invention.

Referring to FIG. 5, the electrode 112 has a pattern composed of a combination of a generally straight line and a smooth curve. According to the embodiment, the electrode 112 pattern is provided in C shape. Alternatively, the electrode pattern may be provided in an S, O shape. When the providing direction of the electrode 112 pattern is suddenly changed, for example, when there is a corner portion bent at a right angle, electric field formation is concentrated at the corner portion, and a relatively high density plasma is formed. The dielectric 111 and the electrode 112 can be etched by the high density plasma. Due to such a problem, the electrode 112 pattern of the present invention has a smooth curve in the region where the direction is switched.

In addition, the end portions 112c and 112d of the electrode 112 pattern are provided as curved surfaces. According to the embodiment, the end portions 112c and 112d of the electrode 112 pattern may be provided in a semicircle. When the end portions 112c and 112d of the electrode 112 pattern are provided in an angular shape, for example, a rectangular shape, electric field formation is concentrated in the corner portion, and a relatively high density plasma is formed. The dielectric 111 and the electrode 112 can be etched by the plasma of high density. Due to this problem, the end portions 112c and 112d of the electrode 112 pattern of the present invention are provided with curved surfaces.

In addition, the electrode 112 may have a width (w) of 0.2 to 2.0 mm. When the width w of the electrode 112 is 0.2 mm or less, the electrode 112 can be easily detached due to etching occurring at the boundary between the dielectric 111 and the electrode 112 during plasma generation.

The distance d between the pattern 112a and the pattern 112b of the electrode 112 is determined according to the type and thickness of the dielectric 111 and the magnitude of the applied voltage. According to the embodiment, the distance d between the pattern 112a and the pattern 112b of the electrode 112 is required to be at least twice as large as the electric field generated in the pattern 112a and 112b. The electric field region generated in the patterns 112a, 112b can be obtained through plasma generation experiments. When the distance between the patterns 112a and 112b is narrower than that, the electric field generated in one pattern 112a overlaps with the electric field generated in the other pattern 112b, and the electric field can be canceled. This results in a low density plasma due to the low Townsend coefficient due to the low electric field. Therefore, the distance between the patterns 112a and 112b should be at least twice as large as the electric field generated in the patterns 112a and 112b, and the plasma may be generated with a uniform intensity.

In addition, the electrodes 112 and 113 may have a thickness of several to several tens of micrometers. The electrodes 112 and 113 may have a thickness smaller than that of the insulating film 111. According to the embodiment, the electrodes 112 and 113 may have a thickness of 2 to 10 mu m. The plasma generating film 110 is provided in a flexible manner by the material and thickness of the insulating film 111 and the electrodes 112 and 113 described above.

6 is a photograph showing a plasma generating film according to another embodiment of the present invention. As shown in Fig. 6, the electrode pattern formed on the plasma generating film can be variously changed.

1, the first electrode 112 formed on one surface of the insulating film 111 is grounded, and the second electrode 113 formed on the other surface is connected to the power source 120. Referring to FIG. When the plasma generating apparatus 100 is used in the inside or outside of the human body, the ground electrode 112 secures stability from electrical shock caused by a contact accident. The plasma generating film 110 is characterized in that the charged particles and the current do not touch the surface of the object to be treated with the insulating film 111 interposed between the electrodes 112 and 113 and the low density radicals , The incidence of DNA mutations may be relatively low.

 The power source 120 applies a voltage to the electrodes 112 and 113. The voltage may be provided by high voltage alternating current power.

A transformer 130 may be provided between the power source 120 and the electrode 113. The transformer 130 can boost the voltage to a high voltage and convert the frequency to several tens to several tens of kHz. According to the embodiment, the transformer 130 can convert a voltage from 0 to 15 KV and a frequency from several hundred Hz to several tens of kHz. The transformer 130 can convert the frequency from 100 Hz to 10 kHz.

The Vpp measurement sensor 140 measures the Vpp value of the voltage applied to the electrode 113. [ The Vpp value is the peak-to-peak voltage, which is the maximum difference of the voltage amplitude. The Vpp measurement sensor 140 is directly connected to the electrodes 112 and 113 to measure the Vpp value.

The controller 150 compares the measured Vpp value measured by the Vpp measurement sensor 140 with the reference Vpp value and turns off the power supply 120 when the measured Vpp value falls within a predetermined percentage range of the reference Vpp value .

Here, the reference Vpp value is an average value of the Vpp values measured at the electrode 113 for the reference time from the start of the voltage application from the power source 120. [ The measured Vpp value is an average value of the Vpp values measured at the electrode 113 in units of the reference time after the voltage application exceeds the reference time.

According to the embodiment, the controller 150 sets the reference time to 5 seconds, obtains the Vpp average value measured for the first 5 seconds as the reference Vpp value, and measures the Vpp average value measured in 5 seconds after 5 seconds as the measured Vpp value .

The controller 150 cuts off the power supply 120 when the measured Vpp value falls within a predetermined percentage range of the reference Vpp value. The predetermined percentage range is a critical range of the Vpp value at which generation of strong dielectric breakdown in the insulating film 111 and the electrodes 112 and 113 starts in the process of plasma generation. When the plasma is generated beyond this range, dielectric breakdown occurs in the insulating film 111 and the electrodes 112 and 113 as shown in FIG. 7, and contaminants generated in the dielectric breakdown flow into the inside and outside of the human body, .

According to an embodiment, the predetermined percentage range may be from 99.5% to 97%. The controller 150 may cut off the power supply 120 when the measured Vpp value corresponds to 99.5% to 97% of the reference Vpp value.

The interruption of the power source 120 interrupts the plasma generation and prevents the occurrence of dielectric breakdown. This can prevent the occurrence of medical accidents due to the generation of pollutants.

8 is a flowchart showing a plasma generation control method according to an embodiment of the present invention.

8, the plasma generation control method includes a step of applying a voltage to the plasma generating film 110 (S10), a step S20 of measuring a voltage Vpp of a voltage applied to the electrode 112, (Step S30) comparing the measured Vpp values, and interrupting the voltage application when the measured Vpp value falls within a predetermined percentage range of the reference Vpp value (steps S40 and S50).

The step of cutting off the voltage application (S50) is performed when the measured Vpp value falls within a predetermined percentage range of the reference Vpp value. According to the embodiment, step S50 of interrupting the voltage application cuts off the voltage application when the measured Vpp value corresponds to 99.5% to 97% of the reference Vpp value.

FIG. 9 is a graph illustrating changes in Vpp value according to an exemplary embodiment of the present invention.

Referring to FIG. 9, the reference time is set to 30 seconds, and the average Vpp value is calculated in units of 30 seconds and displayed on the graph. The Vpp value displayed in the first 30 seconds was set as the reference Vpp value, and in the experiment, it was 3.40 kV. When the percentage range was set to 97%, the power supply was cut off at 6 minutes in which 3.30 kV corresponding to 97% of the reference Vpp value appeared as the Vpp value.

Table 1 below shows the characteristics of the plasma generating film and the plasma generating process according to an embodiment of the present invention.

Insulation film thickness 25.4 ~ 50 um Relative dielectric constant of insulating film 2.2 to 3.2 Electrode thickness 2 to 12 μm Operating frequency 1 to 10 kHz Electrode-applied voltage 0.6 to 2.5 kV Vpp band 1.2 to 5.0 kVpp Plasma temperature Plasma generator: 20-100 ° C
Surface temperature: 20 ~ 45 ℃ Film manufacturing method After the plasma treatment of the surface of the insulating film, the adhesive layer and the conductive layer were deposited by sputtering, and then the thickness of the conductive layer was increased by electrolytic plating Electrode gap shape and electrode design method - The distance between the electrodes is at least twice the range of plasma generation
- Semicircle of edge of electrode.
- The shape of the electrode should be C, S, O type.
- The electrode width is 0.2 to 2.0 mm

The characteristics of Table 1 have the following advantages.

(1) Since the insulation film and the electrode thickness are micro-sized and thin, a flexible plasma generating film can be realized.

(2) Since it is possible to reduce the operating frequency flexibly, the electrode impedance can be increased and the electrode design capable of large-area processing is possible.

(3) Since the thickness of the insulating film is very thin, it is possible to generate plasma at a low applied voltage.

(4) Since the thickness of the plasma-generating film is low, the plasma generation density is low, and the radicals generated in the plasma are diffused into the human body by natural diffusion and a temperature reduction effect is caused by the diffusion with molecules in the air during the diffusion process That is, the skin temperature is low. This prevents DNA damage by unnecessarily high density radicals while preventing the skin from burning due to heat generation in the plasma generating film.

(5) According to the film production method described above, since the surface roughness of the insulating film is small and the interface between the insulating film and the conductive layer is uniform, high reliability can be secured in the power cutoff function through the Vpp monitor.

(6) The shape of the above-described electrode pattern generates a uniform plasma density on the surface of the electrode, and a uniform treatment effect on the surface to be treated and an increase in the life of the plasma generating apparatus can be expected.

(7) The concentration of carbon dioxide produced in the above-mentioned plasma generating film is larger than the concentration of carbon dioxide in the atmosphere. The resulting carbon dioxide promotes skin fat breakdown, increased blood circulation, and decreased melanocytes.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the scope of the present invention is not limited to the disclosed exemplary embodiments. It will also be appreciated that many modifications and variations will be apparent to those skilled in the art without departing from the scope of the present invention.

100: Plasma generator
110: Plasma generating film
111: insulating film
112: first electrode
113: second electrode
120: Power supply
130: Trance
140: Vpp measuring sensor
150: controller

Claims (9)

delete delete delete 1. A method for producing a plasma generating film in which a first electrode is formed on one surface of an insulating film and a second electrode is formed on another surface,
Wherein the step of forming the first electrode and the second electrode on the insulating film
A step of subjecting one surface of the insulating film to a nitrogen ion plating treatment;
Oxygen plasma processing the other surface of the insulating film;
Forming a conductive thin film on both surfaces of the insulating film through a sputtering process in an argon gas atmosphere;
A step of increasing the thickness of the conductive thin film through an electrolytic plating process;
And forming a pattern on at least one thin film of the conductive thin film. delete delete delete delete delete
KR1020160001521A 2016-01-06 2016-01-06 Plasma generating film manufacturing method KR101950065B1 (en)

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KR102266926B1 (en) * 2019-06-19 2021-06-18 한양대학교 산학협력단 Gasification units of polymer film and insecticide apparatus having the same
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010033914A (en) * 2008-07-29 2010-02-12 Kyocera Corp Dielectric structure, and discharge device and fluid reformer using the same
JP2013078573A (en) * 2011-09-21 2013-05-02 Nbc Meshtec Inc Floating virus removal unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010033914A (en) * 2008-07-29 2010-02-12 Kyocera Corp Dielectric structure, and discharge device and fluid reformer using the same
JP2013078573A (en) * 2011-09-21 2013-05-02 Nbc Meshtec Inc Floating virus removal unit

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