JP2010027862A - Laminated structure, multilayer wiring substrate, active matrix substrate, image display apparatus, and method of manufacturing laminated structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a laminated structure on which a precise wiring is formed by the inkjet system. <P>SOLUTION: The laminated structure includes: a substrate; a wettability change layer which is a laminated structure in which a critical surface tension is changed by adding energy to the substrate and which includes a material that changes from a low surface energy state to a high surface energy state, and on which a high surface energy region and a low surface energy region are formed by adding energy; a conductive layer formed on the high surface energy region of the wettability change layer by a conductive material. The high surface energy region is configured by a first region on which an electrical wiring by the conductive layer is formed, and a second region connected with the first region, and which includes a smaller width than that of the first region, and which supplies a solution including the conductive material to the first region. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a laminated structure, a multilayer wiring board, an active matrix substrate, an image display device, and a manufacturing method of the laminated structure.

  As a method for forming an electrode, an insulator, a semiconductor, or the like in an electric circuit or the like, there is an inkjet method in which a solution containing these materials is supplied to a predetermined position on a substrate.

  This ink jet method has advantages in that the number of steps is small and the material efficiency is high, without requiring expensive equipment and equipment, as compared with a photolithography method using an exposure apparatus.

  However, the ink jet method has problems such as wetting and spreading of the solution supplied on the substrate and generation of a liquid puddle of the solution. When the electrode, insulator, and semiconductor pattern are formed by the ink jet method, it is necessary to make the pattern fine. Was difficult.

  Patent Document 1 discloses a method of forming on a substrate a wettability changing layer whose surface energy changes by applying energy. By irradiating this wettability changing layer with ultraviolet rays, a high surface energy part showing lyophilicity with a solution containing a material such as a metal, an insulator or a semiconductor, and a low surface energy part showing liquid repellency with this solution In the high surface energy portion, a solution containing a material such as a metal, an insulator, or a semiconductor is selectively supplied to form a film made of a metal, an insulator, a semiconductor, or the like in that region. It becomes possible.

Patent Document 2 discloses a pattern forming substrate and a pattern forming method in which surface treatment is performed so that when a droplet reaches in the inkjet method, the landed droplet moves in a predetermined direction. In the hydrophilic line that shows lyophilicity with a solution containing materials such as metals, insulators, and semiconductors, and in the water-repellent region that shows lyophilicity with this solution, droplets land at specific positions in the lyophilic region By doing so, the droplet can be moved in a predetermined direction.
JP-A-2005-310962 JP 2004-95896 A

  However, in the method described in Patent Document 1, a solution containing a material such as a metal, an insulator, or a semiconductor is selectively supplied to the high surface energy portion of two portions having different surface energies. In the case where a narrow low surface energy part is formed between two high surface energy parts, the droplet that has landed near the low surface energy part protrudes from the high surface energy part to the low surface energy part. In this case, there is a possibility that high surface energy parts that should not be connected to each other may be connected by droplets.

  Therefore, in order for the solution to spread on the high surface energy part without spreading on the low surface energy part, the droplet is dropped at a position away from the low surface energy part formed between the high surface energy parts. Therefore, there is a limit to the miniaturization of the pattern to be formed.

  In general, the droplet volume of the solution used in the ink jet method is at least 1 pL (diameter 12.4 μm) or more, and in consideration of ejection angle variation and mechanical stage positioning accuracy when using a large number of nozzles. Then, the landing range is at least several tens of μm or more. Furthermore, considering that the liquid droplets land on the substrate with kinetic energy and spread on the surface of the substrate after landing, a margin is required.

  Further, in the method described in Patent Document 2, surface treatment is performed so that the solution moves in a predetermined direction even when the solution is landed while avoiding the region where the solution should not adhere. However, for example, when forming a wiring pattern, it is difficult to spread a solution containing a functional material over the entire hydrophilic line unless at least two types of droplets having different sizes are used. It becomes complicated. Furthermore, in order to move the solution containing the functional material in a predetermined direction, it is necessary to land the droplet of the solution containing the functional material at a specific position on the hydrophilic line with high accuracy.

  The present invention has been made to solve such a problem, and a laminated structure, a multilayer wiring board, an active matrix substrate, an image display device, and a laminated structure in which a fine functional material pattern is formed by a printing method such as an inkjet method. A method for manufacturing a structure is provided.

  The present invention includes a substrate and a material that changes the critical surface tension by applying energy on the substrate and changes from a low surface energy state to a high surface energy state. A wettability changing layer in which a high surface energy region and a low surface energy region are formed, and a conductive layer formed of a conductive material on the high surface energy region of the wettability changing layer. The high surface energy region is connected to the first region where the electrical wiring of the conductive layer is formed and the first region, and is narrower than the first region, And a second region for supplying a solution containing a conductive material to the region.

  According to the present invention, the conductive layer selectively drops a solution containing a conductive material on the second region by an ink jet method, and the solution containing the conductive material is dropped from the second region to the first region. It is characterized by being formed by flowing into a fluid.

  Further, the present invention is characterized in that the second region is formed substantially perpendicular to the longitudinal direction of the first region.

  Further, the present invention is characterized in that the conductive layer formed on the second region is formed thinner than the conductive layer formed on the first region.

  The present invention is characterized in that the resistivity of the conductive layer formed on the second region is higher than the resistivity of the conductive layer formed on the first region.

  In the invention, it is preferable that the resistivity of the conductive layer formed on the second region is 0.01 Ω · cm or more.

  In addition, the present invention includes any one of the above-described stacked structures, and an interlayer insulating film for multilayering a conductive layer formed in the stacked structure.

  In addition, the present invention provides a transistor having a gate electrode, a gate insulating layer, a source electrode, a drain electrode, a storage capacitor electrode, and a semiconductor layer, a gate signal line connected to the gate electrode, and substantially perpendicular to the gate signal line. An active matrix substrate, comprising: a source signal line connected to the source electrode; and a common signal line connected to the storage capacitor electrode. At least one of the electrode, the source electrode, the drain electrode, the storage capacitor electrode, the gate signal line, the source signal line, and the shared signal line is configured by a conductive layer in the stacked structure. It is characterized by that.

  In addition, the present invention is characterized by having an image display element and the active matrix substrate.

  In addition, the present invention provides a first step of forming a wettability changing layer including a wettability changing material whose surface energy is changed by applying energy on the substrate, and applying the energy to the wettability changing layer. A second step of forming a high surface energy region comprising a first region and a second region narrower than the first region; and a conductive material, an insulating material or a semiconductor material in the second region A third step of flowing a solution containing any of a conductive material, an insulating material, or a semiconductor material from the second region to the first region by selectively supplying a solution containing any of the following: A fourth step of forming any one of a conductive layer, an insulating layer, and a semiconductor layer on the first region by drying a solution containing any one of the conductive material, the insulating material, and the semiconductor material. That And butterflies.

  Further, the present invention is characterized in that in the third step, a solution containing any one of the conductive material, the insulating material, and the semiconductor material is supplied to the second region by an ink jet method.

  According to the present invention, there are provided a laminated structure, a multilayer wiring board, an active matrix substrate, an image display device, and a manufacturing method of the laminated structure, which can form a fine functional material pattern by a printing method such as an inkjet method. Can be provided.

  Next, the best mode for carrying out the present invention will be described below.

[First Embodiment]
A first embodiment according to the present invention will be described. The present embodiment is a laminated structure according to the present invention.

  Based on FIG. 1, the laminated structure in this Embodiment is demonstrated. 1A is a top view of the laminated structure, FIG. 1B is a cross-sectional view taken along a broken line 1A-1B in FIG. 1A, and FIG. It is sectional drawing cut | disconnected in the broken line 1C-1D in 1 (a).

  In the laminated structure in the present embodiment, the wettability changing layer 30 is formed on the substrate 20. The wettability changing layer 30 includes a wettability changing material whose surface energy changes when energy is applied. The surface has a high surface energy region 40 having a high surface energy and a low surface energy region having a low surface energy. 50 is formed.

  In the high surface energy region 40, as will be described later, the surface energy is lowered by contact with the solution containing the functional material. Therefore, the wettability to the solution containing the functional material is good, and the low surface energy region 50 is used. Then, the wettability with respect to the solution containing a functional material is bad. Therefore, a solution containing a conductive material can be selectively deposited on the high surface energy region 40, and thus the conductive layer 70 can be formed on the high surface energy region 40.

  As the substrate 20, a substrate such as a glass substrate, a silicon substrate, a stainless steel substrate, or a film substrate can be used. Examples of the film substrate include a polyimide (PI) substrate, a polyethersulfone (PES) substrate, a polyethylene terephthalate (PET) substrate, and a polyethylene naphthalate (PEN) substrate.

  The wettability changing layer 30 is made of a material including a wettability changing material whose surface energy (critical surface tension) is changed by application of energy such as heat, electron beam, ultraviolet light, and plasma. As this wettability changing material, a polymer material having a hydrophobic group in the side chain can be used. Such a polymer material changes from an initial low energy surface (hydrophobic) to a high energy surface (hydrophilicity) by breaking the bond of the hydrophobic group by applying energy such as ultraviolet rays. Specifically, as will be described later, by exposing the surface of the wettability changing layer 30 with ultraviolet rays using a photomask having a predetermined pattern, the exposed region becomes the high surface energy region 40, A high surface energy region 40 and a low surface energy region 50 are formed on the surface of the wettability changing layer 30.

  Specifically, as the polymer material included in the wettability changing material, a side chain having a hydrophobic group is bonded directly or via a bonding group to a main chain having a main structure such as polyimide or (meth) acrylate. The thing that is. Of these polymer materials, polyimide is particularly suitable because it is excellent in solvent resistance, heat resistance, and insulation. Excellent solvent resistance enables a wider range of solvent choices for solutions containing functional materials, and excellent heat resistance makes it suitable for heat treatment processes when drying solutions containing functional materials. Can withstand. Moreover, since it is excellent in insulation, when the conductive layer 70 is formed, there is no possibility that the conductive layers 70 are short-circuited.

  Examples of the hydrophobic group include a fluoroalkyl group containing fluorine and a hydrocarbon group not containing fluorine.

  In the present embodiment, a high surface energy region 40 is formed on the surface of the wettability changing layer 30, and the high surface energy region 40 includes a first region 41 serving as an electric wiring, and a first region 41. The region 41 and the second region 42 connected to the region 41 are configured.

  When supplying a solution containing a conductive material by an ink jet method, the second region 42 is supplied as droplets from an ink jet head. The supplied solution containing the conductive material flows from the second region 42 to the first region 41 and adheres to the surface of the first region 41. In this case, the first region 41 and the second region 42 are high surface energy regions 40 and thus have good wettability, and do not flow to the adjacent low surface energy regions 50.

  Thereafter, by drying, the conductive layer 70 can be formed on the first region 41, and thus a miniaturized pattern can be formed. Note that a conductive layer 70 is formed on the first region 41 by supplying a solution containing a conductive material onto the second region 42. At the same time, a conductive layer is also formed on the second region 42. 70 may be formed. However, depending on conditions, the conductive layer 70 formed on the second region 42 may be formed as an extremely thin film or an island-shaped conductive material region as described later. May not exhibit conductive properties.

  Next, the shape pattern shape of the high surface energy region 40 is illustrated based on FIG.

  The shape of the high surface energy region 40 shown in FIG. 2A is such that a second region 42 connected perpendicularly to the longitudinal direction of the first region 41 is provided.

  The shape of the high surface energy region 40 shown in FIG. 2B is such that a second region 42 connected along the longitudinal direction of the first region 41 is provided.

  The shape of the high surface energy region 40 shown in FIG. 2C is such that a plurality of second regions 42 connected to the first region 41 are provided.

  The shape of the high surface energy region 40 shown in FIG. 2D is such that the connecting portion between the first region 41 and the second region 42 is tapered. As described above, the connection portion is tapered, so that the solution containing the conductive material can smoothly flow from the second region 42 to the first region 41.

  In the first region 41, an electric wiring is formed by the conductive layer 70 to be formed. However, if the first region 41 has a function as an electric wiring, the shape of the first region 41 is a polygon or a circle. Any shape including an ellipse may be used. Further, the second region 42 may have a shape other than a linear shape, for example, a wavy shape.

  As a solution containing a conductive material, a solution obtained by dispersing or dissolving a conductive material in a solvent can be used. Specifically, a so-called nano metal ink in which fine metal particles such as Ag, Al, Au, Cu, Ni, and Pd are dispersed in an organic solvent or water, doped PANI (polyaniline), PEDOT (polyethylenedioxythiophene), PSS ( And an aqueous solution of a conductive polymer doped with (polyethylenesulfonic acid).

  Next, the structure of the laminated structure in this Embodiment is demonstrated.

  FIG. 3 shows an example of a laminated structure in this embodiment. 3A is a top view of the laminated structure, FIG. 3B is a cross-sectional view taken along a broken line 3A-3B in FIG. 3A, and FIG. It is sectional drawing cut | disconnected in the broken line 3C-3D in 3 (a). This stacked structure is a stacked structure in which the conductive layer 70 is formed on the entire surface of the high surface energy region 40, that is, on the surfaces of the first region 41 and the second region 42.

  FIG. 4 shows another example of the laminated structure in this embodiment. 4A is a top view of the laminated structure, FIG. 4B is a cross-sectional view taken along a broken line 4A-4B in FIG. 4A, and FIG. It is sectional drawing cut | disconnected in the broken line 4C-4D in 4 (a).

  In this stacked structure, a conductive layer 70 is formed on the surface of the first region 41 in the high surface energy region 40, and a conductive layer 70 is formed on the surface of the second region 42. There is no laminated structure. When the droplet of the solution containing the conductive material lands on the second region 42 by the ink jet method, the solution containing the conductive material flows from the second region 42 to the first region 41. . After flowing, the height of the solution containing the conductive material on the first region 41 and the second region 42 varies depending on the surface tension. Specifically, the height of the solution containing the conductive material differs depending on the width W1 of the first region 41 and the width W2 of the second region 42. By forming the width W2 of the second region 42 so as to be narrow and adjusted, the solution containing the conductive material supplied as droplets on the second region 42 is almost on the first region 41. It is possible that the fluid flows and hardly remains on the second region 42. By drying such a state, a laminated structure in which the conductive layer 70 is formed on the first region 41 and the conductive layer 70 is not formed on the second region 42 is manufactured. be able to.

  FIG. 5 shows another example of the laminated structure in this embodiment. 5A is a top view of the laminated structure, FIG. 5B is a cross-sectional view taken along a broken line 5A-5B in FIG. 5A, and FIG. It is sectional drawing cut | disconnected in the broken line 5C-5D in 5 (a).

  In this stacked structure, a conductive layer 70 is formed thick on the surface of the first region 41 in the high surface energy region 40, and a thin conductive layer 70 is formed on the surface of the second region 42. It is a laminated structure. As described above, the width W2 of the second region 42 is narrower than the width W1 of the first region 41, and is formed with an adjusted width, so that the conductive layer 70 formed on the first region 41 can be formed. In addition, the conductive layer 70 formed on the second region 42 can be thinly formed.

  FIG. 6 shows another example of the laminated structure in this embodiment. 6A is a top view of the laminated structure, FIG. 6B is a cross-sectional view taken along a broken line 6A-6B in FIG. 6A, and FIG. It is sectional drawing cut | disconnected in the broken line 6C-6D in 6 (a).

  In this stacked structure, a conductive layer 70 is formed on the surface of the first region 41 in the high surface energy region 40, and an island-shaped conductive material is formed on the surface of the second region 42. This is a laminated structure in which the region 71 is formed. As described above, the conductive layer 70 is formed on the first region 41 by making the width W2 of the second region 42 narrower than the width W1 of the first region 41 and forming the adjusted width. The island-shaped conductive material region 71 can be formed on the second region 42. In the island-shaped conductive material region 71, the conductive material is formed in an isolated island shape, and thus has no conductivity in the surface direction. Therefore, the island-shaped conductive material region 71 does not have a conductive function.

  As shown in FIG. 4 or FIG. 6, in the case where the conductive layer 70 is not formed on the second region 42, the conductive layer 70 is formed only on the first region 41 without causing unnecessary leakage current. The function as a conductive layer can be improved.

  Further, even when the conductive layer 70 formed in the second region 42 is thinner than the conductive layer 70 formed in the first region 41, it is possible to improve the function as the conductive layer. In this case, the resistivity of the conductive layer 70 on the second region 42 is higher than the resistivity of the conductive layer 70 on the first region 41.

[Second Embodiment]
The second embodiment is a method for manufacturing a laminated structure according to the first embodiment.

  First, the wettability changing layer 30 is formed on the substrate 20 as shown in FIG. 7A is a top view of this state, FIG. 7B is a cross-sectional view taken along the broken line 7A-7B in FIG. 7A, and FIG. It is sectional drawing cut | disconnected in the broken line 7C-7D in 7 (a).

  Specifically, a wettability changing layer 30 is formed by applying a solution containing a wettability changing material on the substrate 20 using a spin coater or the like and then drying the solution. When a polymer material having a structure having a hydrophobic group in the side chain is used as the wettability changing material used to form the wettability changing layer 30, the surface of the wettability changing layer 30 formed on the substrate 20 is In a low surface energy state.

  Next, as shown in FIG. 8, the surface of the wettability changing layer 30 is irradiated with ultraviolet light or the like to form a high surface energy region 40 and a low surface energy region 50. 8A is a top view of this state, FIG. 8B is a cross-sectional view taken along a broken line 8A-8B in FIG. 8A, and FIG. It is sectional drawing cut | disconnected in the broken line 8C-8D in 8 (a).

  Specifically, the high surface energy region 40 and the low surface energy region 50 are formed by performing exposure with ultraviolet rays using the photomask 90. The photomask 90 is formed with a pattern of Cr or the like that does not transmit ultraviolet light. In the region where the pattern of Cr or the like is formed, the ultraviolet light is not transmitted and the surface of the wettability changing layer 30 is irradiated with ultraviolet light. No light is irradiated. On the other hand, in a region where a pattern such as Cr is not formed, ultraviolet light passes through the photomask 90 and is irradiated on the surface of the wettability changing layer 30. Thereby, in the wettability change layer 30 irradiated with the ultraviolet light, the bond of the hydrophobic group is cut, and the state changes from the low surface energy state to the high surface energy state. Thereby, the surface of the wettability changing layer 30 in the region irradiated with ultraviolet light becomes the high surface energy region 40. On the other hand, since the surface of the wettability changing layer 30 remains in a low surface energy state in the region not irradiated with ultraviolet light, the surface of this region becomes the low surface energy region 50. In this way, the high surface energy region 40 and the low surface energy region 50 are formed on the surface of the wettability changing layer 30.

  In the present embodiment, the high surface energy region 40 includes a first region 41 serving as an electrical wiring and a second region 42 connected to the first region 41. The width W2 is narrower than the width W1 of the first region 41.

  Next, as shown in FIG. 9, a droplet 80 of a solution containing a conductive material is supplied from a droplet discharge nozzle 81. 9A is a top view of this state, FIG. 9B is a cross-sectional view taken along a broken line 9A-9B in FIG. 9A, and FIG. It is sectional drawing cut | disconnected in the broken line 9C-9D in 9 (a).

  Examples of means for supplying a solution containing a conductive material include an ink jet method and a dispenser method, and the above-described droplet discharge nozzle 81 capable of supplying a low-viscosity minute droplet with high accuracy without contact is used. The inkjet method is more suitable.

  Although a solution containing a conductive material is used in this embodiment mode, an insulating layer and a semiconductor layer are formed by using a solution containing a functional material such as an insulating material other than a conductive material or a semiconductor material. Is possible.

  Next, as shown in FIG. 10, the supplied droplet 80 lands on the second region 42 in the high surface energy region 40, and the solution 60 containing the conductive material spreads over the entire high surface energy region 40. Go. 10A is a top view of this state, FIG. 10B is a cross-sectional view taken along the broken line 10A-10B in FIG. 10A, and FIG. It is sectional drawing cut | disconnected in the broken line 10C-10D in a).

  The droplet 80 of the solution containing the landed conductive material flows and spreads from the second region 42 in the high surface energy region 40 to the first region 41 connected to the second region 42.

  Thereafter, as shown in FIG. 11, the solution 60 containing the conductive material is spread over the entire high surface energy region 40. 11A is a top view of this state, FIG. 11B is a cross-sectional view taken along the broken line 11A-11B in FIG. 11A, and FIG. It is sectional drawing cut | disconnected in the broken line 11C-11D in a).

  The solution 60 containing a conductive material spreads as a whole by surface tension from the second region 42 to the first region 41 in the high surface energy region 40.

  Next, as shown in FIG. 12, a conductive layer 70 is formed by drying and solidifying a solution 60 containing a conductive material that has spread over the entire high surface energy region 40. 12B is a cross-sectional view taken along a broken line 12A-12B in FIG. 12A, and FIG. 12C is a cross-sectional view taken along a broken line 12C-12D in FIG.

  Examples of the drying method for drying the solution containing the conductive material include a convection electric heating method using an oven, a conduction heat transfer method using a hot plate, and a radiant heat transfer method using far infrared rays and microwaves. It is done. Moreover, it does not necessarily need to be performed at atmospheric pressure, and may be performed in a depressurized state as necessary. Further, the conductive layer 70 formed by drying and solidifying may be additionally subjected to heat treatment or the like. In particular, when nanometal ink is used as a solution containing a conductive material, it may be difficult to obtain sufficient conductivity simply by drying and solidifying. Higher conductivity can be obtained by melting the fine particles.

  As described above, the droplet 80 of the solution containing the conductive material can be caused to flow from the second region 42 to the first region 41 by selectively landing (dropping) on the second region 42. Therefore, the conductive layer 70 can be formed on the first region 41 with a high yield.

  In the above description, the method for forming the conductive layer 70 using the solution 60 containing a conductive material has been described. However, in this embodiment, the insulating layer is formed using a solution containing an insulating material. In addition, the semiconductor layer can be formed using a solution containing a semiconductor material.

(Droplet discharge device)
Next, an ink jet apparatus which is a liquid droplet ejection apparatus for supplying liquid droplets containing a conductive material will be described.

  FIG. 13 is a perspective view of the ink jet apparatus used in the present embodiment. The inkjet apparatus 100 includes a surface plate 101, a stage 102, a droplet discharge head 103, an X-axis direction moving mechanism 104 connected to the droplet discharge head 103, and a Y-axis direction moving mechanism connected to the stage 102. 105 and a control device 106.

  The stage 102 is provided for the purpose of supporting the substrate 20, and includes a fixing mechanism such as an adsorption mechanism (not shown) that adsorbs the substrate 20. Further, a heat treatment mechanism for drying the solution 60 containing the conductive material disposed on the substrate 20 may be provided.

  The droplet discharge head 103 is a head including a plurality of discharge nozzles, and the plurality of discharge nozzles are arranged on the lower surface of the droplet discharge head 103 at regular intervals along the X-axis direction. A solution 60 containing a conductive material is discharged from the discharge nozzle onto the substrate 20 supported by the stage 102. For example, a piezo method can be used as a droplet discharge mechanism of the droplet discharge head 103. In this case, a droplet is discharged by applying a voltage to a piezo element in the droplet discharge head 103.

  The X-axis direction moving mechanism 104 includes an X-axis direction drive shaft 107 and an X-axis direction drive motor 108. The X-axis direction drive motor 108 is a stepping motor or the like. When a drive signal in the X-axis direction is supplied from the control device 106, the X-axis direction drive shaft 107 is operated and the droplet discharge head 103 moves in the X-axis direction. .

  The Y-axis direction moving mechanism 105 includes a Y-axis direction drive shaft 109 and a Y-axis direction drive motor 110. When a drive signal in the X-axis direction is supplied from the control device 106, the stage 102 moves in the Y-axis direction.

  The control device 106 supplies a discharge control signal to the droplet discharge head 103. Further, a drive signal in the X-axis direction is supplied to the X-axis direction drive motor 108, and a drive signal in the Y-axis direction is supplied to the Y-axis direction drive motor 110, respectively. The control device 106 is connected to the droplet discharge head 103, the X-axis direction drive motor 108, and the Y-axis direction drive motor 110, but the wiring thereof is not shown.

  The inkjet apparatus 100 discharges droplets of the solution 60 containing a conductive material onto the substrate 20 fixed on the stage 102 while relatively scanning the droplet discharge head 103 and the stage 102. A rotation mechanism that operates independently of the X-axis direction moving mechanism 104 may be provided between the droplet discharge head 103 and the X-axis direction moving mechanism 104. By operating the rotation mechanism to change the relative angle between the droplet discharge head 103 and the stage 102, the pitch between the discharge nozzles can be adjusted. Further, a Z-axis direction moving mechanism that operates independently of the X-axis direction moving mechanism 104 may be provided between the droplet discharge head 103 and the X-axis direction moving mechanism 104. By moving the droplet discharge head 103 in the Z-axis direction, the distance between the substrate 20 and the nozzle surface can be arbitrarily adjusted. A rotation mechanism that operates independently of the Y-axis direction moving mechanism 105 may be provided between the stage 102 and the Y-axis direction moving mechanism 105. By operating the rotation mechanism, it is possible to discharge droplets onto the substrate 20 in a state where the substrate 20 fixed on the stage 102 is rotated at an arbitrary angle.

  As a physical property of the solution 60 containing a conductive material, it is desirable that the solution 60 containing a conductive material can be stably discharged from the droplet discharge head 103. In general, the surface tension of the solution 60 containing the conductive material is 20 mN / m or more and 50 mN / in order to stabilize the speed and shape of the droplets 80 of the meniscus and the solution containing the conductive material at the time of flight. m or less is desirable, more preferably about 30 mN / m. The viscosity of the solution 60 containing the conductive material is desirably 2 mPa · s or more and 50 mPa · s or less, and the solution 60 containing the conductive material disposed on the second region 40b is further included in the first region 40a. In order to efficiently self-flow upward, the viscosity is preferably as small as possible within the above range.

  In this ink jet apparatus 100, a state in which a droplet of a solution containing a conductive material is discharged and landed on the second region 42 will be described.

  The flow of the solution 60 containing a conductive material can be controlled by the size of the droplet 80, the width W2 of the second region 42, the surface energy state in the high surface energy 40 region, and the like.

  Next, the relationship between the width W2 of the second region 42 and the size of the droplet 80 of the solution containing a conductive material will be described with reference to FIGS.

  Specifically, as shown in FIG. 14A, in the case where the width W2 of the second region 42 is substantially the same as the diameter R of the liquid droplet 80 containing the conductive material, FIG. As shown, the liquid 60 containing a conductive material spreads over the entire surface of the high surface energy region 40. 15A is a top view of this state, FIG. 15B is a cross-sectional view taken along the broken line 15A-15B in FIG. 15A, and FIG. It is sectional drawing cut | disconnected in the broken line 15C-15D in a).

  Further, as shown in FIG. 14B, even when the width W2 of the second region 42 is somewhat narrower than the diameter R of the liquid droplet 80 containing the conductive material, as shown in FIG. The solution 60 containing a conductive material spreads over the entire surface of the high surface energy region 40. 16A is a top view of this state, FIG. 16B is a cross-sectional view taken along a broken line 16A-16B in FIG. 16A, and FIG. It is sectional drawing cut | disconnected in the broken line 16C-16D in a). In this case, the flow of the solution 60 containing the conductive material from the second region 42 to the first region 41 is promoted due to the influence of the surface tension. As a result, the solution 60 containing more conductive material flows on the first region 41. Therefore, by reducing the width W2 of the second region 42, the amount of the solution 60 containing the conductive material remaining on the second region 42 can be reduced.

  Further, as shown in FIG. 14C, when the width W2 of the second region 42 is sufficiently narrower than the diameter R of the liquid droplet 80 containing the conductive material, as shown in FIG. In addition, the solution 60 containing the conductive material is less likely to flow from the second region 42 to the first region 41, and the solution 60 containing the conductive material oozes out into the low surface energy region 50. The solution 60 containing the conductive material sufficiently on the one region 41 will not spread. 17A is a top view of this state, FIG. 17B is a cross-sectional view taken along the broken line 17A-17B in FIG. 17A, and FIG. It is sectional drawing cut | disconnected in the broken line 17C-17D in a).

  As described above, the diameter R of the droplet 80 of the solution containing the conductive material, the first value so that the solution 60 containing the conductive material can efficiently flow from the second region 42 to the first region 41. It is necessary to optimize the width W2 of the region 2 and the surface energy state in the high surface energy region 40.

[Third Embodiment]
The third embodiment is an active matrix substrate according to the present invention.

  Based on FIG. 18, the active matrix substrate in the present embodiment will be described. 18A is a top view of the active matrix substrate in the present embodiment, and FIG. 18B is a cross-sectional view taken along broken lines 18A-18B.

  In the active matrix substrate in this embodiment, a first wettability changing layer 430 is formed on a substrate 420 such as glass. The first wettability changing layer 430 is made of an insulating material. A first region 441 and a second region 442 which are high surface energy regions are formed on the surface of the first wettability changing layer 430 by irradiation with ultraviolet light or the like, and the first region of the high surface energy region is formed. A gate electrode 210, a storage capacitor electrode 250, a gate signal line 280, and a common electrode 300 are formed on 441. The gate electrode 210 is connected to the gate signal line 280, and the storage capacitor electrode 250 is connected to the common signal line 300. A layer 311 made of a conductive material is formed over the second region 442 in the high surface energy region. Since the layer 311 made of a conductive material is formed into a thin film or an island shape, it hardly has conductivity. Note that the second region 442 in the high surface energy region is connected to the gate signal line 280, and a droplet containing a conductive material lands on the second region 442 in the high surface energy region, so that the gate A solution containing a conductive material spreads over the entire signal line 280 and the gate electrode 210, and this is heated to form a conductive layer, whereby the gate signal line 280 and the gate electrode 210 are formed.

  Thereafter, a second wettability changing layer 530 is further formed on the gate electrode 210, the storage capacitor electrode 250, the gate signal line 280, and the common electrode 300 formed thereon. The second wettability changing layer 530 has an insulating property and functions as a gate insulating film.

  By irradiating the surface of the second wettability changing layer 530 with ultraviolet light, a first region 541 and a second region 542 which are high surface energy regions are formed. On the first region 541 in the high surface energy region, the source electrode 230, the drain electrode 240, and the source wiring 290 are formed. The source electrode 230 is connected to and integrated with the source wiring 290. A layer 310 made of a conductive material is formed over the second region 542 in the high surface energy region. The layer 310 made of the conductive material is formed in a thin film or an island shape. Therefore, it has almost no conductivity. Note that the second region 542 of the high surface energy region is connected to the source signal line 290, and a droplet containing a conductive material lands on the second region 542 of the high surface energy region, so that the source A solution containing a conductive material spreads over the signal line 290 and the source electrode 230, and a conductive layer is formed by heating the solution, whereby the source signal line 290 and the source electrode 230 are formed.

  In the present embodiment, the second region 442 is provided in the high surface energy region on the surface of the first wettability changing layer 430, and the second region 442 is provided in the high surface energy region on the surface of the second wettability changing layer 530. A region 542 is included. As a result, the droplets containing the conductive material are landed on the second regions 442 and 542 of the high surface energy region, so that the adjacent electrodes need to be kept electrically connected. Therefore, a high-density active matrix substrate can be obtained.

[Examples regarding conductivity of conductive layer]
Example 1
This example relates to the relationship between the film thickness and resistivity of the conductive layer of the laminated structure having the structure shown in FIG. Specifically, it relates to the relationship between the film thickness of the conductive layer 70 and the resistivity in the second region 42 of the present invention. FIG. 19A is a top view of the laminated structure in the present example, and FIG. 19B is a cross-sectional view taken along a broken line 19A-19B.

  In the stacked structure shown in FIG. 19, first, the wettability changing layer 130 is formed on the substrate 120. Specifically, an NMP solution containing a wettability changing material is applied on a glass substrate to be the substrate 120 by a spin coater. As the wettability changing material, a polyimide material having an alkyl group in a side chain whose surface free energy changes by irradiation with ultraviolet rays is used. Next, ultraviolet light having a wavelength of 300 nm or less is irradiated through a photomask having a line width of 20 μm, and a high surface energy region 140 and a low surface energy region 150 having a line width of 20 μm are formed on the wettability changing layer 130. Form.

  Next, a droplet of a solution containing a conductive material is ejected onto the high surface energy region 140 by an inkjet method. As the solution containing the conductive material, nanometal ink made of Ag fine particles having an average particle diameter of about 10 nm was used. The solution containing the conductive material has a surface tension of about 30 mN / m and a viscosity of about 10 mPa · s. Further, the contact angle in the high surface energy region 140 measured using the liquid suitability method is 5 °, and the contact angle in the low surface energy region 150 is 30 °. Further, the volume of the droplet of the solution containing the conductive material discharged from the ink jet apparatus is 8 pL (the diameter of the droplet is about 25 μm). After landing on the high surface energy region 140, the spread droplets are dried in an oven at 100 ° C. and removed by volatilizing the solvent of the solution containing the conductive material, and then for 1 hour using an oven at 200 ° C. A conductive layer 170 was formed on the high surface energy region 140 by firing. In this manner, a laminated structure in which a band-like conductive layer 170 having a width W of 20 μm was formed was produced. Note that the thickness d of the conductive layer 170 can be controlled by adjusting the number of droplets landed on the high surface energy region 140. Therefore, samples with different thickness d of the conductive layer 170 are prepared. The relationship between the film thickness d of the conductive layer 170 and the resistivity was examined.

FIG. 20 shows the relationship between the film thickness d of the conductive layer 170 and the resistivity. The resistivity was measured by measuring the resistance value with two terminals provided at intervals of 5 mm in the band-like length direction. As shown in the figure, there is a correlation between the film thickness d of the conductive layer 170 and the resistivity. In particular, when the film thickness d decreases, the change in resistivity becomes significant. When the film thickness d of the conductive layer 170 was about 20 nm, it was about 0.05 Ω · cm, and when the film thickness d was 20 nm or less, the resistivity was high and could not be measured by the above measurement method. When the film thickness d of the conductive layer 170 is about 35 nm, it is about 3 × 10 ⁻⁴ Ω · cm, and when the film thickness d of the conductive layer 170 is about 50 nm, it is about 8 × 10 ⁻⁵ Ω · cm. cm, and when the film thickness d of the conductive layer 170 is about 75 nm, it is about 3 × 10 ⁻⁵ Ω · cm, and when the film thickness d of the conductive layer 170 is about 110 nm, it is about 2 × 10 ^−5. It was Ω · cm. As described above, the sudden change in resistivity due to the change in the film thickness d of the conductive layer 170 is considered to be due to the fact that the film thickness d of the conductive layer 170 is not reduced uniformly. As described above, the resistivity of the conductive layer 170 can be controlled by changing the film thickness d of the conductive layer 170.

  In the present invention, it is desirable that the conductive layer on the second region 42 in the high surface energy region 40 does not have a conductive property. That is, when a conductive layer having high conductivity is formed on the second region 42, a multilayer wiring board, an active matrix substrate, and an image display device that are finally formed due to an increase in leakage current and an increase in parasitic capacitance. It is because it adversely affects For this reason, it is preferable that the resistivity of the conductive layer formed on the second region 42 is high, and it should be 0.01 Ω · cm or more from the viewpoint of an increase in leakage current, an increase in parasitic capacitance, and the like. preferable. In this embodiment, when the conductive layer 170 has a thickness of about 20 nm or less, a conductive layer having such a resistivity can be obtained.

[Example of width dependency of second region]
(Example 2)
This example relates to the production of the laminated structure shown in FIG. Specifically, a method for manufacturing the laminated structure of this example will be described.

  First, as shown in FIG. 7, the wettability changing layer 30 is formed on the substrate 20. Specifically, an NMP solution containing a wettability changing material is applied on a glass substrate to be the substrate 20 by a spin coater. As the wettability changing material, a polyimide material having an alkyl group in a side chain whose surface free energy changes by irradiation with ultraviolet rays is used. Then, after pre-baking in an oven at 100 ° C., the solvent is removed by volatilization at 180 ° C. to form the wettability changing layer 30.

  Next, as shown in FIG. 8, a high surface energy region 40 and a low surface energy region 50 are formed. Specifically, exposure is performed on the surface of the wettability changing layer 30 through a photomask 90 on which a predetermined pattern is formed using ultraviolet light (ultra-high pressure mercury lamp) having a wavelength of 300 nm or less. Thereby, the region irradiated with ultraviolet light on the surface of the wettability changing layer 30 becomes the high surface energy region 40, and the region not irradiated with ultraviolet light becomes the low surface energy region 50. The high surface energy region 40 includes a first region 41 having a width W1 and a second region 42 having a width W2.

  Next, as shown in FIG. 9, a droplet 80 of a solution containing a conductive material is ejected onto the second region 42 by an inkjet method. As the solution containing the conductive material, nanometal ink made of Ag fine particles having an average particle diameter of about 10 nm was used. The solution containing the conductive material has a surface tension of about 30 mN / m and a viscosity of about 10 mPa · s. Further, the contact angle in the high surface energy region 40 measured using the liquid suitability method is 5 °, and the contact angle in the low surface energy region 50 is 30 °. Further, the volume of the droplet 80 of the solution containing the conductive material discharged from the ink jet apparatus is 8 pL (the diameter of the droplet is about 25 μm).

  Thereafter, as shown in FIG. 10, the droplet 80 lands on the second region 42, and the solution 60 containing the conductive material spreads over the entire high surface energy region 40.

  Then, as shown in FIG. 12, after drying in an oven at 100 ° C. and removing the solvent of the solution containing the conductive material by volatilization, main baking is performed for 1 hour using an oven at 200 ° C. Then, the conductive layer 70 is formed on the high surface energy region 40.

  In this embodiment, the width W1 of the first region 41 is 20 μm, and the width W2 of the second region 42 is 10 μm.

  As a result, in Example 2, the conductive layer 70 having conductivity was obtained on the first region 41, but the conductive layer 70 having conductivity was not formed on the second region 42. .

(Example 3)
In Example 3, the width W1 of the first region 41 was 20 μm, and the width W2 of the second region 42 was 20 μm. Other conditions are the same as those in Example 2.

  As a result, in Example 3, the conductive layer 70 having conductivity in both the first region 41 and the second region 42 was obtained.

Example 4
In Example 4, the width W1 of the first region 41 was 20 μm, and the width W2 of the second region 42 was 5 μm. Other conditions are the same as those in Example 2.

  As a result, in Example 4, the conductive layer 70 having conductivity in both the first region 41 and the second region 42 could not be obtained.

  Table 1 shows the results obtained for Example 2 to Example 4 regarding the conductivity of the film formed in the first region 41 and the conductivity of the film formed in the second region 42.

このように、第１の領域４１上又は、第２の領域４２上において、導電性を有する導電膜７０は、第２の領域の幅Ｗ２に依存して、形成することができる場合と、形成することができない場合とが生じる。

As described above, the conductive film 70 having conductivity can be formed on the first region 41 or the second region 42 depending on the width W2 of the second region. If you can not do.

[Example of adjacent pattern]
(Example 5)
In Example 5, in the pattern of the laminated structure according to the present invention, that is, the pattern in which the high surface energy region 40 shown in FIG. In the case of the conventional structure and the pattern of the laminated structure having the conventional structure, that is, the pattern in which the high surface energy region 40 shown in FIG. It shows a comparison with the case where it was made to. The diameter of the ejected droplet 80 is about 25 μm. 21A is a top view of the pattern of the laminated structure according to the present invention, and FIG. 21B is a cross-sectional view taken along a broken line 21A-21B in FIG. (C) is sectional drawing cut | disconnected by the broken line 21C-21D in Fig.21 (a). FIG. 22A is a top view of a pattern of a laminated structure having a conventional configuration, and FIG. 22B is a cross-sectional view taken along a broken line 22A-22B in FIG.

  In the present embodiment, in the pattern shown in FIG. 21, the width W1 of the first region 41 is 20 μm, the width W2 of the second region 42 is 10 μm, and the first region of the adjacent high surface energy region 40 is used. The space | interval (space) L between 41 is 40 micrometers. Moreover, in the pattern shown in FIG. 22, the space | interval (space) L between the adjacent high surface energy area | regions 40 is 40 micrometers.

  As a result, in Example 5, both the structure pattern of the present invention shown in FIG. 21 and the conventional structure pattern shown in FIG. 22 are electrically connected between the adjacent high surface energy regions 40. The insulation was maintained without any problems.

(Example 6)
In the present embodiment, in the pattern shown in FIG. 21, the width W1 of the first region 41 is 20 μm, the width W2 of the second region 42 is 10 μm, and the first region of the adjacent high surface energy region 40 is used. The space | interval (space) L between 41 is 20 micrometers. Moreover, in the pattern shown in FIG. 22, the space | interval (space) L between the adjacent high surface energy area | regions 40 is 20 micrometers. Other conditions are the same as in the fifth embodiment.

  As a result, in Example 6, in the structure pattern of the present invention shown in FIG. 21, the insulating property was maintained between the adjacent high surface energy regions 40 without being electrically connected. In the pattern of the conventional structure shown in FIG. 22, electrical connection was made between adjacent high surface energy regions 40, and insulation was not maintained.

(Example 7)
In the present embodiment, in the pattern shown in FIG. 21, the width W1 of the first region 41 is 20 μm, the width W2 of the second region 42 is 10 μm, and the first region of the adjacent high surface energy region 40 is used. The space | interval (space) L between 41 is 10 micrometers. Moreover, in the pattern shown in FIG. 22, the space | interval (space) L between the adjacent high surface energy area | regions 40 is 10 micrometers. Other conditions are the same as in the fifth embodiment.

  As a result, in Example 7, in the structure pattern according to the present invention shown in FIG. 21, the insulating property was maintained between the adjacent high surface energy regions 40 without being electrically connected. In the pattern of the conventional structure shown in FIG. 22, electrical connection was made between adjacent high surface energy regions 40, and insulation was not maintained.

(Example 8)
In the present embodiment, in the pattern shown in FIG. 21, the width W1 of the first region 41 is 20 μm, the width W2 of the second region 42 is 10 μm, and the first region of the adjacent high surface energy region 40 is used. The space | interval (space) L between 41 is 5 micrometers. Moreover, in the pattern shown in FIG. 22, the space | interval (space) L between the adjacent high surface energy area | regions 40 is 5 micrometers. Other conditions are the same as in the fifth embodiment.

  As a result, in Example 8, in the structure pattern of the present invention shown in FIG. 21, the insulating property was maintained between the adjacent high surface energy regions 40 without being electrically connected. In the pattern of the conventional structure shown in FIG. 22, electrical connection was made between adjacent high surface energy regions 40, and insulation was not maintained.

  Table 2 shows the results relating to Example 5 to Example 8. In the pattern of the laminated structure according to the present invention shown in FIG. 21, a conductive layer is not formed between the adjacent high surface energy regions 40 without depending on the space (space) L. . On the other hand, in the laminated structure pattern having the conventional configuration shown in FIG. 22, a conductive layer is formed by a conductive material between adjacent high surface energy regions 40 unless the space (space) L is 40 μm or more. End up.

以上、本発明の実施に係る形態について説明したが、上記内容は、発明の内容を限定するものではない。

As mentioned above, although the form which concerns on implementation of this invention was demonstrated, the said content does not limit the content of invention.

Schematic diagram of the laminated structure according to the first embodiment Shape diagram of modified example of high surface energy region of laminated structure according to first embodiment Schematic diagram of the laminated structure according to the first embodiment Schematic diagram of another laminated structure according to the first embodiment (1) Schematic diagram of another laminated structure according to the first embodiment (2) Schematic diagram of another laminated structure according to the first embodiment (3) Process drawing (1) of the manufacturing method of the laminated structure which concerns on 2nd Embodiment Process drawing (2) of the manufacturing method of the laminated structure which concerns on 2nd Embodiment Process drawing (3) of the manufacturing method of the laminated structure which concerns on 2nd Embodiment Process drawing (4) of the manufacturing method of the laminated structure which concerns on 2nd Embodiment Process drawing (5) of the manufacturing method of the laminated structure which concerns on 2nd Embodiment Process drawing of the manufacturing method of the laminated structure which concerns on 2nd Embodiment (6) The perspective view of the droplet discharge apparatus used for manufacture of the laminated structure which concerns on 2nd Embodiment Relationship between the width of the second region of the high surface energy region and the size of the droplet Schematic diagram showing the width of the second region and how the solution of the droplet spreads (1) Schematic diagram showing the width of the second region and the state of spreading of the solution of the droplet (2) Schematic diagram showing the width of the second region and the state of spreading of the droplet solution (3) Schematic diagram of an active matrix substrate according to a third embodiment Schematic diagram of the structure of the laminated structure in Example 1 19 is a relationship diagram of the film thickness and resistivity of the conductive layer of the laminated structure in FIG. Schematic diagram of laminated structure according to the present invention in Examples Schematic diagram of conventional laminated structure in Example

Explanation of symbols

20 substrate 30 wettability changing layer 40 high surface energy region 41 first region 42 second region 50 low surface energy region 60 solution 70 containing conductive material conductive layer 80 droplet 90 photomask

Claims (11)

A substrate,
On the substrate, the material includes a material whose critical surface tension changes by applying energy and changes from a low surface energy state to a high surface energy state. A wettability changing layer in which a low surface energy region is formed;
A conductive layer formed of a conductive material on a high surface energy region of the wettability changing layer;
Have
The high surface energy region includes a first region in which electrical wiring is formed by the conductive layer;
A second region connected to the first region and having a narrower width than the first region and supplying a solution containing a conductive material to the first region;
It is comprised by these, The laminated structure characterized by the above-mentioned.   The conductive layer is formed by selectively dropping a solution containing a conductive material onto the second region by an ink jet method and flowing the solution containing the conductive material from the second region to the first region. The laminated structure according to claim 1, wherein   The stacked structure according to claim 1, wherein the second region is formed substantially perpendicular to a longitudinal direction of the first region.   The conductive layer formed on the second region is formed thinner than the conductive layer formed on the first region. Laminated structure.   5. The resistivity of the conductive layer formed on the second region is higher than the resistivity of the conductive layer formed on the first region. 6. The laminated structure according to 1.   6. The stacked structure according to claim 1, wherein a resistivity of the conductive layer formed on the second region is 0.01 Ω · cm or more. A laminated structure according to any one of claims 1 to 6,
An interlayer insulating film for multilayering the conductive layer formed in the laminated structure;
A multilayer wiring board comprising: A transistor having a gate electrode, a gate insulating layer, a source electrode, a drain electrode, a storage capacitor electrode, and a semiconductor layer;
A gate signal line connected to the gate electrode;
A source signal line formed substantially perpendicular to the gate signal line and connected to the source electrode;
A common signal line connected to the storage capacitor electrode;
In an active matrix substrate having
It has the laminated structure in any one of Claim 1 to 6,
At least one of the gate electrode, the source electrode, the drain electrode, the storage capacitor electrode, the gate signal line, the source signal line, and the shared signal line is configured by a conductive layer in the stacked structure. An active matrix substrate characterized by comprising: An image display element;
An active matrix substrate according to claim 8;
An image display device comprising: A first step of forming a wettability changing layer including a wettability changing material whose surface energy is changed by applying energy on the substrate;
A second step of forming a high surface energy region including a first region and a second region narrower than the first region by applying the energy to the wettability changing layer;
By selectively supplying a solution containing any one of a conductive material, an insulating material, and a semiconductor material to the second region, the conductive material, the insulating material, or the semiconductor material is supplied to the first region from the second region. A third step of flowing a solution containing any of the above,
A fourth step of forming any one of a conductive layer, an insulating layer, and a semiconductor layer on the first region by drying a solution containing any of the conductive material, the insulating material, or the semiconductor material;
A method for forming a laminated structure, comprising:   11. The stacked structure according to claim 10, wherein in the third step, a solution containing any one of the conductive material, the insulating material, and the semiconductor material is supplied to the second region by an inkjet method. Forming method.

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