JP2010021416A5 - - Google Patents

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Publication number
JP2010021416A5
JP2010021416A5 JP2008181456A JP2008181456A JP2010021416A5 JP 2010021416 A5 JP2010021416 A5 JP 2010021416A5 JP 2008181456 A JP2008181456 A JP 2008181456A JP 2008181456 A JP2008181456 A JP 2008181456A JP 2010021416 A5 JP2010021416 A5 JP 2010021416A5
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JP
Japan
Prior art keywords
resist pattern
main surface
semiconductor substrate
forming
organic material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008181456A
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English (en)
Japanese (ja)
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JP2010021416A (ja
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Publication date
Application filed filed Critical
Priority to JP2008181456A priority Critical patent/JP2010021416A/ja
Priority claimed from JP2008181456A external-priority patent/JP2010021416A/ja
Publication of JP2010021416A publication Critical patent/JP2010021416A/ja
Publication of JP2010021416A5 publication Critical patent/JP2010021416A5/ja
Pending legal-status Critical Current

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JP2008181456A 2008-07-11 2008-07-11 半導体装置の製造方法 Pending JP2010021416A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008181456A JP2010021416A (ja) 2008-07-11 2008-07-11 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008181456A JP2010021416A (ja) 2008-07-11 2008-07-11 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2010021416A JP2010021416A (ja) 2010-01-28
JP2010021416A5 true JP2010021416A5 (cg-RX-API-DMAC10.html) 2011-08-25

Family

ID=41706003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008181456A Pending JP2010021416A (ja) 2008-07-11 2008-07-11 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2010021416A (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9268899B2 (en) * 2013-03-14 2016-02-23 Silicon Storage Technology, Inc. Transistor design for use in advanced nanometer flash memory devices
CN112038391B (zh) * 2019-06-03 2024-05-24 上海先进半导体制造有限公司 超结场效应晶体管的制作方法
CN114695094B (zh) * 2020-12-29 2025-07-25 芯恩（青岛）集成电路有限公司 一种抑制wpe的阱离子注入方法
CN114695093B (zh) * 2020-12-29 2025-07-11 芯恩（青岛）集成电路有限公司 一种阱离子注入方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100633994B1 (ko) * 2005-07-26 2006-10-13 동부일렉트로닉스 주식회사 반도체 소자의 웰 포토레지스트 패턴 및 그 형성 방법
JP2007305858A (ja) * 2006-05-12 2007-11-22 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

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