JP2010015692A - Flat cable and its manufacturing method - Google Patents

Flat cable and its manufacturing method Download PDF

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JP2010015692A
JP2010015692A JP2008171885A JP2008171885A JP2010015692A JP 2010015692 A JP2010015692 A JP 2010015692A JP 2008171885 A JP2008171885 A JP 2008171885A JP 2008171885 A JP2008171885 A JP 2008171885A JP 2010015692 A JP2010015692 A JP 2010015692A
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tin
flat cable
alloy
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JP5181876B2 (en
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Manabu Nagano
学 永野
Shigeaki Katsumata
茂彰 勝又
Tatsuo Matsuda
龍男 松田
Satoshi Yadoshima
悟志 宿島
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Sumitomo Electric Industries Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a flat cable in which generation of a whisker is sufficiently suppressed and also increase of contact resistance is suppressed, and a manufacturing method to manufacture the flat cable. <P>SOLUTION: This is a flat cable 1 in which a plurality of rectangular conductors 2 arranged in parallel are covered by an insulating film 3. The rectangular conductors 2 have an alloy layer 12 made of an alloy in which bismuth and zinc are contained in tin formed on the surface of a base material 11 made of copper or copper alloy, and the alloy layer 12 contains bismuth of 1.0 wt.% or more and 4.0 wt.% or less and zinc of 0.2 wt.% or more and 2.0 wt.% or less against tin, and the thickness is 0.3 μm or more and 0.9 μm or less. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、電子機器などに用いられるフラットケーブル及びその製造方法に関する。   The present invention relates to a flat cable used for an electronic device or the like and a manufacturing method thereof.

電子機器の小形化、軽量化に伴い、これらに搭載される電子部品、配線用部品等の小形化が進んでいる。特に、電気配線のための配線部材は、限られたスペースで高密度の配線が可能なものが要望されている。このような配線部材として、複数本の平角導体を一平面上に配列し、その配列面の両側からそれぞれ絶縁フィルムをラミネートしたフラットケーブルが知られている。   As electronic devices become smaller and lighter, electronic components and wiring components mounted on these devices are becoming smaller. In particular, wiring members for electrical wiring are required to be capable of high-density wiring in a limited space. As such a wiring member, a flat cable is known in which a plurality of rectangular conductors are arranged on a single plane and an insulating film is laminated from both sides of the arrangement surface.

このフラットケーブルでは、半田付け性を向上させるための皮膜として導体に錫(Sn)メッキを施すことが行われている。
しかし、錫メッキを施した導体では、コネクタの端子との電気接触のための圧縮応力を受けることに起因して導体の表面に針状結晶体(ウィスカ)が発生することが知られている。特に、導体同士の間隔が極めて狭いフラットケーブルでは、このウィスカが短絡の原因となる場合がある。
In this flat cable, tin (Sn) plating is applied to a conductor as a film for improving solderability.
However, it is known that a tin-plated conductor generates acicular crystals (whiskers) on the surface of the conductor due to receiving compressive stress for electrical contact with the connector terminals. In particular, in a flat cable in which the distance between conductors is extremely narrow, this whisker may cause a short circuit.

このようなウィスカによる短絡を防止するため、導電基体上に、ビスマス(Bi)、銅(Cu)、銀(Ag)、亜鉛(Zn)のうち少なくとも1種を0.1〜15重量%含有する錫合金メッキを形成し、その上層に、亜鉛メッキ、銀メッキ、錫−亜鉛合金メッキ、錫−銀合金メッキ又は錫−ビスマス合金メッキを形成し、通電アニール処理などの熱処理をすることが知られている(例えば、特許文献1参照)。   In order to prevent such a short circuit due to whiskers, the conductive substrate contains 0.1 to 15% by weight of at least one of bismuth (Bi), copper (Cu), silver (Ag), and zinc (Zn). It is known that a tin alloy plating is formed, and a zinc plating, silver plating, tin-zinc alloy plating, tin-silver alloy plating or tin-bismuth alloy plating is formed on the upper layer, and heat treatment such as energization annealing is performed. (For example, refer to Patent Document 1).

特開2007−46150号公報JP 2007-46150 A

ところが、上記の処理条件では、ウィスカの発生を十分に抑えることが難しく、特に、熱処理温度が適正でないと、ウィスカの発生が抑えられたとしても接触抵抗が増加し、コネクタとの導通不良の要因となってしまう。   However, under the above processing conditions, it is difficult to sufficiently suppress the generation of whiskers. In particular, if the heat treatment temperature is not appropriate, even if whisker generation is suppressed, the contact resistance increases and the cause of poor conduction with the connector. End up.

本発明は、ウィスカの発生が十分に抑えられ、接触抵抗の増加も抑制されたフラットケーブルを提供すること及びそのフラットケーブルを製造する製造方法を提供することを目的としている。   An object of the present invention is to provide a flat cable in which generation of whiskers is sufficiently suppressed and an increase in contact resistance is also suppressed, and a manufacturing method for manufacturing the flat cable.

上記課題を解決することのできる本発明に係るフラットケーブルは、並列に配列された複数の導体が絶縁体で被覆されたフラットケーブルであって、
前記導体は、銅または銅合金からなる基材の表面に、錫にビスマス及び亜鉛が含まれた合金からなる合金層が形成されてなり、
前記合金層は、錫に対して1.0重量%以上4.0重量%以下のビスマス及び0.2重量%以上2.0重量%以下の亜鉛が含まれ、厚さが0.3μm以上0.9μm以下であることを特徴とする。
The flat cable according to the present invention that can solve the above problems is a flat cable in which a plurality of conductors arranged in parallel are covered with an insulator,
The conductor is formed by forming an alloy layer made of an alloy containing bismuth and zinc in tin on the surface of a base material made of copper or a copper alloy,
The alloy layer contains 1.0% by weight to 4.0% by weight of bismuth and 0.2% by weight to 2.0% by weight of zinc with respect to tin, and has a thickness of 0.3 μm to 0%. .9 μm or less.

また、本発明に係るフラットケーブルの製造方法は、並列に配列された複数の導体が絶縁体で被覆されたフラットケーブルの製造方法であって、
前記導体を構成する銅または銅合金からなる基材の表面に、1.0重量%以上4.0重量%以下のビスマスが錫に含まれた第1メッキ層と、0.2重量%以上2.0重量%以下の亜鉛が錫に含まれた第2メッキ層とを、厚さの合計が0.3μm以上0.9μm以下となるように形成する表面処理工程と、
前記導体を270℃以上290℃以下の温度で加熱する加熱処理工程と、
複数の前記導体を並列に配列させて絶縁体で覆うケーブル化工程とを行うことを特徴とする。
The flat cable manufacturing method according to the present invention is a flat cable manufacturing method in which a plurality of conductors arranged in parallel are covered with an insulator,
A first plating layer in which 1.0 wt% or more and 4.0 wt% or less of bismuth is contained in tin on the surface of a base material made of copper or a copper alloy constituting the conductor; A surface treatment step of forming a second plating layer containing 0.0 wt% or less of zinc in tin so that the total thickness is 0.3 μm or more and 0.9 μm or less;
A heat treatment step of heating the conductor at a temperature of 270 ° C. or higher and 290 ° C. or lower;
A cable forming step of arranging a plurality of the conductors in parallel and covering them with an insulator is performed.

また、前記加熱処理工程は、270℃以上290℃以下の高温雰囲気中に前記導体を通過させて加熱することが好ましい。   Moreover, it is preferable that the said heat processing process passes the said conductor in a high temperature atmosphere (270 degreeC or more and 290 degrees C or less), and heats it.

本発明のフラットケーブルによれば、錫にビスマス及び亜鉛が前述の量だけ含まれた合金からなる合金層が、銅または銅合金からなる基材の表面に形成された導体を有し、合金層の材質と厚さを上記のように設定したので、ウィスカの発生を十分に抑え、しかも、接触抵抗の増加も確実に抑制することができる。   According to the flat cable of the present invention, the alloy layer made of an alloy in which bismuth and zinc are contained in the aforementioned amounts in tin has a conductor formed on the surface of the base material made of copper or a copper alloy, and the alloy layer Since the material and thickness are set as described above, the generation of whiskers can be sufficiently suppressed, and the increase in contact resistance can be reliably suppressed.

また、本発明のフラットケーブルの製造方法によれば、銅または銅合金からなる基材の表面に、1.0重量%以上4.0重量%以下のビスマスが錫に含まれた第1メッキ層と、0.2重量%以上2.0重量%以下の亜鉛が錫に含まれた第2メッキ層とを、厚さの合計が0.3μm以上0.9μm以下となるように形成した導体を、270℃以上290℃以下で加熱することにより、第1メッキ層と第2メッキ層とを一体化し、錫と銅との合金量が適正な量とされた合金層とすることができる。これにより、ウィスカの発生を十分に抑えることができ、しかも、接触抵抗の増加も確実に抑制することができ、さらには、良好な半田付け性の改善効果も得ることができる。   Moreover, according to the flat cable manufacturing method of the present invention, the first plating layer in which 1.0 wt% or more and 4.0 wt% or less of bismuth is contained in tin on the surface of the base material made of copper or copper alloy. And a second plating layer in which 0.2 wt% or more and 2.0 wt% or less of zinc is contained in tin, a conductor formed so that the total thickness becomes 0.3 μm or more and 0.9 μm or less By heating at 270 ° C. or more and 290 ° C. or less, the first plating layer and the second plating layer can be integrated to form an alloy layer in which the alloy amount of tin and copper is an appropriate amount. Thereby, generation | occurrence | production of a whisker can fully be suppressed, and also the increase in contact resistance can be suppressed reliably, and also the improvement effect of favorable solderability can be acquired.

以下、本発明に係るフラットケーブル及びその製造方法の実施形態の例について、図面を参照して説明する。
図1は本発明に係るフラットケーブルを示す平面図、図2は図1の矢視A−A断面図、図3はフラットケーブルの端部における導体露出部の側面図、図4は平角導体の断面図である。
図1及び図2に示すように、フラットケーブル1は、複数本(本実施形態では10本)の平角導体(導体)2が所定の並列ピッチで平面上に配列され、平角導体2の配列面の両面にそれぞれ絶縁フィルム(絶縁体)3が貼着(ラミネート)されている。なお、平角導体2を覆う絶縁体は、フィルムの代わりに絶縁樹脂を押し出し被覆したものであっても良い。
Hereinafter, an example of an embodiment of a flat cable and a method for manufacturing the same according to the present invention will be described with reference to the drawings.
1 is a plan view showing a flat cable according to the present invention, FIG. 2 is a cross-sectional view taken along line AA in FIG. 1, FIG. 3 is a side view of a conductor exposed portion at the end of the flat cable, and FIG. It is sectional drawing.
As shown in FIGS. 1 and 2, the flat cable 1 includes a plurality of (10 in the present embodiment) flat conductors (conductors) 2 arranged on a plane at a predetermined parallel pitch. An insulating film (insulator) 3 is stuck (laminated) on each of the two surfaces. Note that the insulator covering the flat conductor 2 may be formed by extruding an insulating resin instead of a film.

絶縁フィルム3は、絶縁樹脂層4と絶縁性接着層5とからなり、例えば、絶縁樹脂層4はポリエステルまたはポリイミドあるいはPPS等の樹脂であり、絶縁性接着層5はポリエステル系接着剤もしくは難燃PVCである。平角導体2に対して、絶縁性接着層5の面を対向させて2枚の絶縁フィルム3が貼り合わされている。これにより、平角導体2同士の電気的絶縁を図っている。   The insulating film 3 includes an insulating resin layer 4 and an insulating adhesive layer 5. For example, the insulating resin layer 4 is a resin such as polyester, polyimide, or PPS, and the insulating adhesive layer 5 is a polyester adhesive or flame retardant. PVC. Two insulating films 3 are bonded to the flat conductor 2 with the surface of the insulating adhesive layer 5 facing the flat conductor 2. Thus, electrical insulation between the rectangular conductors 2 is achieved.

フラットケーブル1の長手方向の両端部は、一方の面にのみ絶縁フィルム3が貼着され、他方の面で複数本の全ての平角導体2が露出した導体露出部6とされており、電気コネクタの弾性コンタクト片等に接続可能な接続端末として機能する。
図3に示すように、導体露出部6の平角導体2が露出していない側の面には、ポリエステル等の絶縁樹脂からなる端末補強テープ7が貼着されており、露出した平角導体2を支持して変形を防止している。
The both ends in the longitudinal direction of the flat cable 1 are conductor exposed portions 6 in which the insulating film 3 is stuck only on one surface and a plurality of flat conductors 2 are exposed on the other surface. It functions as a connection terminal that can be connected to the elastic contact piece.
As shown in FIG. 3, a terminal reinforcing tape 7 made of an insulating resin such as polyester is attached to the surface of the conductor exposed portion 6 on the side where the flat conductor 2 is not exposed. Supports to prevent deformation.

本実施形態において、平角導体2の厚さは35μm以上50μm以下、幅寸法は約0.3mmであり、10本の平角導体2の並列ピッチは約0.5mmである。図4に示すように、平角導体2は、断面長方形に形成された基材11上に合金層12が積層された構造である。本実施形態では、基材11の外周全域に合金層12が形成されている。基材11としては、銅(Cu)、銀(Ag)−銅(Cu)合金、錫(Sn)−銅(Cu)合金などが用いられる。   In the present embodiment, the thickness of the flat conductor 2 is 35 μm or more and 50 μm or less, the width dimension is approximately 0.3 mm, and the parallel pitch of the ten flat conductors 2 is approximately 0.5 mm. As shown in FIG. 4, the flat conductor 2 has a structure in which an alloy layer 12 is laminated on a base material 11 having a rectangular cross section. In the present embodiment, the alloy layer 12 is formed on the entire outer periphery of the substrate 11. As the substrate 11, copper (Cu), silver (Ag) -copper (Cu) alloy, tin (Sn) -copper (Cu) alloy, or the like is used.

この基材11の周囲の合金層12は、錫(Sn)にビスマス(Bi)及び亜鉛(Zn)が含まれた合金からなるものである。
合金層12の材質は、錫に対して1.0重量%以上4.0重量%以下のビスマス及び0.2重量%以上2.0重量%以下の亜鉛が含まれたものである。合金層12の厚さは、0.3μm以上0.9μm以下である。
The alloy layer 12 around the substrate 11 is made of an alloy in which bismuth (Bi) and zinc (Zn) are contained in tin (Sn).
The material of the alloy layer 12 contains 1.0% by weight to 4.0% by weight of bismuth and 0.2% by weight to 2.0% by weight of zinc with respect to tin. The thickness of the alloy layer 12 is not less than 0.3 μm and not more than 0.9 μm.

合金層12の厚さは平角導体2の並列ピッチと関連する。上記の例では平角導体2の並列ピッチが0.5mmであり、平角導体2の幅が0.3mmであるので、平角導体2同士の間隔は0.2mmである。この場合に錫のウィスカによる導体間の短絡を十分に抑えるためには錫を含む合金層12を0.9μm以上としなければならない。一方で、錫を含む合金層12を0.3μm以上としないと錫メッキの効果が発揮されない。
平角導体2の並列ピッチを0.3mmとすると平角導体2同士の間隔が短くなるので錫のウィスカによる短絡が生じないためには、許容されるウィスカの長さがさらに短くなる。一方、平角導体2の幅が細くなるので平角導体2の周囲の合金層12に含まれる錫の量は少なくなる。その分ウィスカの伸長が少なくなるので、平角導体2の並列ピッチを0.3mmとした場合も合金層12の厚さを0.3μmから0.9μmの範囲として錫メッキの効果を発揮しつつ錫のウィスカによる平角導体2間の短絡を十分に抑えることができる。
The thickness of the alloy layer 12 is related to the parallel pitch of the flat conductors 2. In the above example, since the parallel pitch of the rectangular conductors 2 is 0.5 mm and the width of the rectangular conductors 2 is 0.3 mm, the interval between the rectangular conductors 2 is 0.2 mm. In this case, in order to sufficiently suppress the short circuit between the conductors due to the tin whisker, the alloy layer 12 containing tin must be 0.9 μm or more. On the other hand, the effect of tin plating cannot be exhibited unless the alloy layer 12 containing tin is 0.3 μm or more.
When the parallel pitch of the flat conductors 2 is 0.3 mm, the distance between the flat conductors 2 is shortened, so that a short circuit due to a tin whisker does not occur, and the allowable whisker length is further shortened. On the other hand, since the width of the flat conductor 2 is reduced, the amount of tin contained in the alloy layer 12 around the flat conductor 2 is reduced. Accordingly, whisker elongation is reduced. Therefore, even when the parallel pitch of the rectangular conductors 2 is 0.3 mm, the thickness of the alloy layer 12 is set in the range of 0.3 μm to 0.9 μm while exhibiting the effect of tin plating. The short circuit between the rectangular conductors 2 due to the whisker can be sufficiently suppressed.

次に、上記のフラットケーブル1を製造する場合について説明する。
図5は表面処理工程で処理された平角導体の断面図、図6は熱処理工程を示す斜視図、図7はケーブル化工程を示す斜視図である。
図5に示すように、まず、平角導体2を構成する基材11の周囲にメッキ処理を施す(表面処理工程)。
具体的には、基材11の表面に、錫−ビスマス合金をメッキ処理することにより第1メッキ層21を形成し、さらに、その表面に、錫−亜鉛合金をメッキ処理することにより第2メッキ層22を形成する。
Next, the case where the above flat cable 1 is manufactured will be described.
FIG. 5 is a cross-sectional view of a rectangular conductor treated in the surface treatment process, FIG. 6 is a perspective view showing a heat treatment process, and FIG. 7 is a perspective view showing a cable forming process.
As shown in FIG. 5, first, a plating process is performed around the base material 11 constituting the flat conductor 2 (surface treatment process).
Specifically, the first plating layer 21 is formed on the surface of the base material 11 by plating with a tin-bismuth alloy, and the second plating is performed on the surface by plating with a tin-zinc alloy. Layer 22 is formed.

第1メッキ層21は、錫に対してビスマスを1.0重量%以上4.0重量%以下とし、第2メッキ層22は、錫に対して亜鉛を0.2重量%以上2.0重量%以下とする。
また、第1メッキ層21及び第2メッキ層22は、その厚さの合計を0.3μm以上0.9μm以下とする。なお、本実施形態では、第1メッキ層21及び第2メッキ層22の厚さをそれぞれ0.3μmとし、厚さの合計を0.6μmとする。
The first plating layer 21 is 1.0 wt% or more and 4.0 wt% or less of bismuth with respect to tin, and the second plating layer 22 is 0.2 wt% or more and 2.0 wt% of zinc with respect to tin. % Or less.
The total thickness of the first plating layer 21 and the second plating layer 22 is 0.3 μm or more and 0.9 μm or less. In the present embodiment, the thicknesses of the first plating layer 21 and the second plating layer 22 are each 0.3 μm, and the total thickness is 0.6 μm.

次に、上記基材11の表面に第1メッキ層21及び第2メッキ層22を形成した平角導体2に熱処理を施す(熱処理工程)。
図6に示すように、平角導体2に熱処理を施すには、加熱装置31を用いる。加熱装置31は、筒状に形成したステンレス材からなる長さ約8mの加熱パイプ32の周囲に、カンタル線33を巻回させたもので、カンタル線33に電力を供給することにより、加熱パイプ32内に高温雰囲気を生じさせる。この加熱パイプ32内の高温雰囲気の温度は、270℃以上290℃以下とする。
Next, heat treatment is performed on the flat conductor 2 in which the first plating layer 21 and the second plating layer 22 are formed on the surface of the base material 11 (heat treatment step).
As shown in FIG. 6, a heating device 31 is used to heat-treat the flat conductor 2. The heating device 31 is obtained by winding a Kanthal wire 33 around a heating pipe 32 made of a stainless material and having a length of about 8 m. By supplying power to the Kanthal wire 33, the heating pipe 31 is heated. A high-temperature atmosphere is generated in 32. The temperature of the high-temperature atmosphere in the heating pipe 32 is 270 ° C. or higher and 290 ° C. or lower.

そして、この加熱装置31の加熱パイプ32内に、第1メッキ層21及び第2メッキ層22を形成した平角導体2を、約160m/分の線速で通過させる。このようにすると、平角導体2は、加熱装置31の高温雰囲気によって約3秒間加熱される。これにより、第1メッキ層21及び第2メッキ層22は、加熱処理によって錫が拡散することにより一体化し、錫にビスマス及び亜鉛が含まれた合金からなる合金層12となる。
なお、高温雰囲気を円筒状の加熱パイプ32により生じさせ、その中心に平角導体2を通過させることにより、平角導体2に対する加熱温度を横断面の周方向に均一化することができる。
Then, the rectangular conductor 2 on which the first plating layer 21 and the second plating layer 22 are formed is passed through the heating pipe 32 of the heating device 31 at a linear velocity of about 160 m / min. In this way, the flat conductor 2 is heated by the high temperature atmosphere of the heating device 31 for about 3 seconds. Thereby, the 1st plating layer 21 and the 2nd plating layer 22 are united by diffusion of tin by heat treatment, and become the alloy layer 12 made of an alloy containing bismuth and zinc in tin.
In addition, the heating temperature with respect to the flat conductor 2 can be equalize | homogenized in the circumferential direction of a cross section by producing a high temperature atmosphere with the cylindrical heating pipe 32, and allowing the flat conductor 2 to pass through the center.

ここで、熱処理の温度が高すぎると(290℃を越えると)、合金層12における錫と銅との合金量が増加し、接触抵抗が大きくなってしまう(例えば、接触抵抗が50mΩ以上となる)。また、熱処理温度が低すぎると(270℃より低いと)、錫と銅との合金量が少なくなり、ウィスカの発生が十分に抑えられなくなり、また、半田付け性の改善効果が低くなり、導体露出部6での半田付けに影響してしまう。   Here, if the temperature of the heat treatment is too high (over 290 ° C.), the alloy amount of tin and copper in the alloy layer 12 increases and the contact resistance increases (for example, the contact resistance becomes 50 mΩ or more). ). If the heat treatment temperature is too low (below 270 ° C.), the amount of tin-copper alloy is reduced, whisker generation cannot be sufficiently suppressed, and the effect of improving solderability is reduced. This will affect the soldering at the exposed portion 6.

これに対して、本実施形態では、熱処理工程にて、平角導体2を通過させる高温雰囲気の温度を270℃以上290℃以下としていることにより、合金層12における錫と銅との合金量を適正な量とすることができる。これにより、ウィスカの発生が十分に抑えられ、接触抵抗の増加も抑制された平角導体2とすることができ、良好な半田付け性の改善効果も得られる。平角導体2が加熱パイプ32を通過する時間すなわち加熱時間は数秒とする。本発明では加熱温度が加熱時間よりもウィスカの抑制および接触抵抗増加の抑制に影響する。   On the other hand, in this embodiment, in the heat treatment step, the temperature of the high-temperature atmosphere through which the flat conductor 2 passes is set to 270 ° C. or more and 290 ° C. or less, so that the alloy amount of tin and copper in the alloy layer 12 is appropriate The amount can be made small. Thereby, it is possible to obtain the flat conductor 2 in which the generation of whiskers is sufficiently suppressed and the increase in contact resistance is suppressed, and a good soldering improvement effect can be obtained. The time for which the flat conductor 2 passes through the heating pipe 32, that is, the heating time is several seconds. In the present invention, the heating temperature affects the suppression of whisker and the increase of contact resistance rather than the heating time.

次に、図7に示すように、熱処理を施した平角導体2が巻き取られている複数のリール41から平角導体2を送り出して所定の並列ピッチで同一平面上に配列し、配列した平角導体2の上下に、リール42から長尺の絶縁フィルム3を送り出してヒータローラ43間に通し、巻き取りローラ44に巻き取る(ケーブル化工程)。   Next, as shown in FIG. 7, the rectangular conductors 2 are fed from a plurality of reels 41 around which the heat-treated rectangular conductors 2 are wound up, arranged on the same plane at a predetermined parallel pitch, and arranged rectangular conductors. 2, the long insulating film 3 is sent out from the reel 42, passed between the heater rollers 43, and taken up on the take-up roller 44 (cable forming step).

なお、絶縁フィルム3は、その絶縁性接着層5側を平角導体2側に向ける。これにより、ヒータローラ43の間を通過することにより、絶縁フィルム3の絶縁性接着層5が溶融し、平面上に配列された複数本の平角導体2には、配列面の上下から絶縁フィルム3が絶縁性接着層5によって貼り合わされ、平角導体2が平面上に配列されて絶縁体(絶縁樹脂層4と絶縁性接着層5)で被覆された一連長の長尺のフラットケーブル1が形成される。ヒータローラ43は絶縁フィルム3を加熱するヒータ部と絶縁フィルム3を圧着するローラ部とが別々の機構であるものでもよい。   The insulating film 3 has its insulating adhesive layer 5 side facing the flat conductor 2 side. Thereby, the insulating adhesive layer 5 of the insulating film 3 is melted by passing between the heater rollers 43, and the insulating film 3 is formed on the plurality of flat conductors 2 arranged on the plane from above and below the arrangement surface. A series of long flat cables 1 are formed which are bonded together by the insulating adhesive layer 5 and the rectangular conductors 2 are arranged on a plane and covered with an insulator (insulating resin layer 4 and insulating adhesive layer 5). . The heater roller 43 may have a mechanism in which a heater portion for heating the insulating film 3 and a roller portion for pressing the insulating film 3 are separate mechanisms.

なお、ケーブル化工程において、絶縁フィルム3を貼り合わせる代わりに、平角導体2の周囲に絶縁樹脂を押し出し被覆しても良い。   In the cable forming process, instead of attaching the insulating film 3, an insulating resin may be extruded and covered around the flat conductor 2.

一方の絶縁フィルム3には、図1に示した導体露出部6を設けるために、長手方向の一部に開口した窓部を形成しておくと良い。窓部はフラットケーブル1の長手方向の端部となる箇所に設けられる。また、絶縁フィルム3の幅方向の余剰部分(耳と呼ばれる部分)は、切断されて除去される。これにより、窓部の幅方向両端部で絶縁フィルム3が長手方向に繋がった箇所が除去される。その後、長尺のフラットケーブルは、窓部の箇所で切断され、所定の長さ毎のフラットケーブル1とされる。   In order to provide the conductor exposed portion 6 shown in FIG. 1 on one insulating film 3, it is preferable to form a window portion opened in a part in the longitudinal direction. A window part is provided in the location used as the edge part of the flat cable 1 in the longitudinal direction. Moreover, the excess part (part called an ear | edge) of the width direction of the insulating film 3 is cut | disconnected and removed. Thereby, the location where the insulating film 3 was connected to the longitudinal direction by the width direction both ends of a window part is removed. Thereafter, the long flat cable is cut at the window portion to form the flat cable 1 for each predetermined length.

このようにして製造されたフラットケーブル1では、その導体露出部6にコネクタを嵌合して1000時間後に50μmより長いウィスカの発生の有無を観察した結果、不良となる50μmより長いウィスカの発生がないことが確認された。   In the flat cable 1 manufactured in this manner, a connector is fitted to the conductor exposed portion 6 and, after 1000 hours, the presence or absence of whiskers longer than 50 μm is observed. Not confirmed.

以上説明したように、本実施形態のフラットケーブル1によれば、平角導体2が銅または銅合金からなる基材11の表面に合金層12を有するものであり、その合金層12は、錫に対して1.0重量%以上4.0重量%以下のビスマス及び0.2重量%以上2.0重量%以下の亜鉛が含まれたものである。
平角導体2の厚さを35μmから50μm、平角導体2の幅を0.15mmから0.3mmとし、かつ合金層12の厚さを0.3μmから0.9μmとした場合に、錫のウィスカが発生することを抑制するには、錫のメッキ層にビスマスと亜鉛とをそれぞれ1.0重量%以上、0.2重量%以上添加することが必要である。一方のみの添加では錫のウィスカの発生を十分抑えることができず、いずれか一方の添加量が上記の量より少なくても錫のウィスカの発生を十分抑えることができなかった。
As described above, according to the flat cable 1 of the present embodiment, the flat conductor 2 has the alloy layer 12 on the surface of the base material 11 made of copper or a copper alloy, and the alloy layer 12 is made of tin. On the other hand, it contains 1.0 to 4.0% by weight of bismuth and 0.2 to 2.0% by weight of zinc.
When the thickness of the flat conductor 2 is 35 μm to 50 μm, the width of the flat conductor 2 is 0.15 mm to 0.3 mm, and the thickness of the alloy layer 12 is 0.3 μm to 0.9 μm, the tin whisker is In order to suppress the occurrence, it is necessary to add bismuth and zinc to the tin plating layer by 1.0 wt% or more and 0.2 wt% or more, respectively. The addition of only one could not sufficiently suppress the generation of tin whiskers, and even if the addition amount of either one was less than the above amount, the generation of tin whiskers could not be sufficiently suppressed.

前述したように、270℃以上290℃以下の温度で熱処理されることによって基材11中の銅がメッキ層へ移行してきて、錫、銅、ビスマス、亜鉛の四元合金が形成される。ビスマスと亜鉛がそれぞれ上記の濃度で組み合わされて含まれ、錫のウィスカの発生が十分に抑制される合金構造となると考えられる。ここで、合金層に含まれるビスマスまたは亜鉛がそれぞれ4.0重量%、2.0重量%を超えると、平角導体2の熱処理温度を270℃以上290℃以下としても、接触抵抗が大きくなり50mΩ以下の接触抵抗としにくかった。したがって、接触抵抗の問題を生じないためには、ビスマスと亜鉛の添加量はそれぞれ4.0重量%以下、2.0重量%以下としなければならない。   As described above, by performing heat treatment at a temperature of 270 ° C. or more and 290 ° C. or less, the copper in the base material 11 moves to the plating layer, and a quaternary alloy of tin, copper, bismuth, and zinc is formed. It is considered that bismuth and zinc are contained in combination at the above concentrations, and an alloy structure in which the generation of tin whiskers is sufficiently suppressed is obtained. Here, when the bismuth or zinc contained in the alloy layer exceeds 4.0% by weight and 2.0% by weight, respectively, even if the heat treatment temperature of the flat conductor 2 is 270 ° C. or more and 290 ° C. or less, the contact resistance increases and 50 mΩ. The following contact resistance was difficult. Therefore, in order not to cause the problem of contact resistance, the addition amounts of bismuth and zinc must be 4.0% by weight or less and 2.0% by weight or less, respectively.

平角導体2の表面の錫が多くなると、ウィスカが発生しやすくなるが、錫の層(合金層12)の厚さを薄くしすぎると、半田付け性が悪くなる。フラットケーブル1の平角導体2は、合金層12の厚さが0.3μm以上0.9μm以下であるので、ウィスカの発生を十分に抑えることができ、なおかつ半田付け性も良好である。   When the tin on the surface of the flat conductor 2 is increased, whiskers are likely to be generated. However, if the thickness of the tin layer (alloy layer 12) is too thin, solderability is deteriorated. In the flat conductor 2 of the flat cable 1, since the thickness of the alloy layer 12 is 0.3 μm or more and 0.9 μm or less, the occurrence of whiskers can be sufficiently suppressed, and the solderability is also good.

また、上記のフラットケーブルの製造方法によれば、銅または銅合金からなる基材11の表面に、1.0重量%以上4.0重量%以下のビスマスが錫に含まれた第1メッキ層21と、0.2重量%以上2.0重量%以下の亜鉛が錫に含まれた第2メッキ層22とを、厚さの合計が0.3μm以上0.9μm以下となるように形成した平角導体2を270℃以上290℃以下の温度で加熱することにより、第1メッキ層21と第2メッキ層22とを一体化した合金層12とすることができる。そして、この合金層12では、錫と銅との合金量が適正な量とされ、これにより、ウィスカの発生を十分に抑え、半田付け性の改善効果も得ることができ、なおかつ接触抵抗を50mΩ以下とすることができる。したがって、ウィスカの発生が十分に抑えられ、接触抵抗も良好に抑制されたフラットケーブル1を製造することができる。   Further, according to the above flat cable manufacturing method, the first plating layer in which 1.0 wt% or more and 4.0 wt% or less of bismuth is contained in tin on the surface of the base material 11 made of copper or a copper alloy. 21 and the second plating layer 22 containing 0.2 wt% or more and 2.0 wt% or less of zinc in tin are formed so that the total thickness becomes 0.3 μm or more and 0.9 μm or less. By heating the flat conductor 2 at a temperature of 270 ° C. or more and 290 ° C. or less, the alloy layer 12 in which the first plating layer 21 and the second plating layer 22 are integrated can be obtained. In the alloy layer 12, the alloy amount of tin and copper is set to an appropriate amount, thereby sufficiently suppressing the generation of whiskers and obtaining an effect of improving the solderability, and further having a contact resistance of 50 mΩ. It can be as follows. Therefore, it is possible to manufacture the flat cable 1 in which the generation of whiskers is sufficiently suppressed and the contact resistance is also well suppressed.

また、加熱装置31の加熱パイプ32内に形成した270℃以上290℃以下の高温雰囲気中に、平角導体2を所定の線速で通過させて加熱することにより加熱処理を行うので、生産性を向上させることができる。   In addition, since the flat conductor 2 is heated at a predetermined linear velocity in a high temperature atmosphere of 270 ° C. or more and 290 ° C. or less formed in the heating pipe 32 of the heating device 31, the productivity is improved. Can be improved.

本発明に係るフラットケーブルの実施形態の例を示す平面図である。It is a top view which shows the example of embodiment of the flat cable which concerns on this invention. 図1の矢視A−A断面図である。It is arrow AA sectional drawing of FIG. 図1のフラットケーブルの端部における導体露出部の側面図である。It is a side view of the conductor exposure part in the edge part of the flat cable of FIG. 図1のフラットケーブルに含まれる導体の断面図である。It is sectional drawing of the conductor contained in the flat cable of FIG. 表面処理工程で処理された導体の断面図である。It is sectional drawing of the conductor processed at the surface treatment process. 熱処理工程の例を示す斜視図である。It is a perspective view which shows the example of a heat processing process. ケーブル化工程の例を示す斜視図である。It is a perspective view which shows the example of a cable formation process.

符号の説明Explanation of symbols

1:フラットケーブル、2:平角導体(導体)、3:絶縁フィルム(絶縁体)、11:基材、12:合金層、21:第1メッキ層、22:第2メッキ層 1: flat cable, 2: flat conductor (conductor), 3: insulating film (insulator), 11: base material, 12: alloy layer, 21: first plating layer, 22: second plating layer

Claims (3)

並列に配列された複数の導体が絶縁体で被覆されたフラットケーブルであって、
前記導体は、銅または銅合金からなる基材の表面に、錫にビスマス及び亜鉛が含まれた合金からなる合金層が形成されてなり、
前記合金層は、錫に対して1.0重量%以上4.0重量%以下のビスマス及び0.2重量%以上2.0重量%以下の亜鉛が含まれ、厚さが0.3μm以上0.9μm以下であることを特徴とするフラットケーブル。
A flat cable in which a plurality of conductors arranged in parallel are covered with an insulator,
The conductor is formed by forming an alloy layer made of an alloy containing bismuth and zinc in tin on the surface of a base material made of copper or a copper alloy,
The alloy layer contains 1.0% by weight to 4.0% by weight of bismuth and 0.2% by weight to 2.0% by weight of zinc with respect to tin, and has a thickness of 0.3 μm to 0%. A flat cable having a thickness of 9 μm or less.
並列に配列された複数の導体が絶縁体で被覆されたフラットケーブルの製造方法であって、
前記導体を構成する銅または銅合金からなる基材の表面に、1.0重量%以上4.0重量%以下のビスマスが錫に含まれた第1メッキ層と、0.2重量%以上2.0重量%以下の亜鉛が錫に含まれた第2メッキ層とを、厚さの合計が0.3μm以上0.9μm以下となるように形成する表面処理工程と、
前記導体を270℃以上290℃以下の温度で加熱する加熱処理工程と、
複数の前記導体を並列に配列させて絶縁体で覆うケーブル化工程とを行うことを特徴とするフラットケーブルの製造方法。
A method of manufacturing a flat cable in which a plurality of conductors arranged in parallel are covered with an insulator,
A first plating layer in which 1.0 wt% or more and 4.0 wt% or less of bismuth is contained in tin on the surface of a base material made of copper or a copper alloy constituting the conductor; A surface treatment step of forming a second plating layer containing 0.0 wt% or less of zinc in tin so that the total thickness is 0.3 μm or more and 0.9 μm or less;
A heat treatment step of heating the conductor at a temperature of 270 ° C. or higher and 290 ° C. or lower;
A flat cable manufacturing method comprising: performing a cable forming step in which a plurality of conductors are arranged in parallel and covered with an insulator.
請求項2に記載のフラットケーブルの製造方法であって、
前記加熱処理工程は、270℃以上290℃以下の高温雰囲気中に前記導体を通過させて加熱することを特徴とするフラットケーブルの製造方法。
It is a manufacturing method of the flat cable according to claim 2,
The said heat processing process passes the said conductor in the high temperature atmosphere of 270 degreeC or more and 290 degrees C or less, and heats it, The manufacturing method of the flat cable characterized by the above-mentioned.
JP2008171885A 2008-06-30 2008-06-30 Flat cable manufacturing method Expired - Fee Related JP5181876B2 (en)

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