JP2009529794A - 半導体試料のドーピング密度の算出方法 - Google Patents
半導体試料のドーピング密度の算出方法 Download PDFInfo
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- JP2009529794A JP2009529794A JP2008558672A JP2008558672A JP2009529794A JP 2009529794 A JP2009529794 A JP 2009529794A JP 2008558672 A JP2008558672 A JP 2008558672A JP 2008558672 A JP2008558672 A JP 2008558672A JP 2009529794 A JP2009529794 A JP 2009529794A
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- cantilever
- semiconductor sample
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
- G01Q60/30—Scanning potential microscopy
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
- G01Q60/32—AC mode
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
- G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
- G01Q60/40—Conductive probes
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
Abstract
【選択図】図1
Description
3 半導体試料
4 カンチレバー
5 チップ
6 感知尖端
7 金属被覆
8 波形発生器
9 体積変化
10 フォトダイオード
11 ロックイン増幅器
12 評価ユニット
13 マスク
Claims (6)
- カンチレバー尖端がショットキー障壁を形成しながら半導体試料との接触状態に入るようになっている原子間力顕微鏡を用いて、半導体試料の表面および/または表面付近の層領域のドーパント密度を算出する方法であって、前記半導体試料の内部の前記ショットキー障壁の空間範囲を決定付ける空間電荷領域がその空間範囲に関して起振されるように、前記カンチレバー尖端と前記半導体試料間の前記ショットキー障壁の領域に交流電位を印加し、その振動を前記カンチレバーに伝達して検出し、それに基づきドーパント密度を算出することから成る方法。
- 請求項1に記載の方法において、
前記カンチレバーと前記半導体試料との間に接触共振ω/2πが生じるように、前記起振を行うことを特徴とする方法。 - 請求項1または2に記載の方法において、
前記接触共振周波数ω/2π、前記カンチレバーに伝達された振動の振幅および/または位相に基づきドーパント密度を算出することを特徴とする方法。 - 請求項3に記載の方法において、
前記接触共振周波数の変化を検出するための信号フィードバックの過程で、ドーパント密度を算出することを特徴とする方法。 - 請求項4に記載の方法において、
前記カンチレバーの振動の振幅および/または位相の変化を検出することにより、ドーパント密度を場所の関数として算出することを特徴とする方法。 - 請求項1から6のいずれか一項に記載の方法において、
前記カンチレバーに直流電位を印加することを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006011660.7 | 2006-03-12 | ||
DE102006011660A DE102006011660A1 (de) | 2006-03-12 | 2006-03-12 | Verfahren zur Ermittlung einer Dotierungsdichte in einer Halbleiterprobe |
PCT/EP2007/001736 WO2007104432A1 (de) | 2006-03-12 | 2007-02-28 | Verfahren zur ermittlung einer dotierungsdichte in einer halbleiterprobe |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009529794A true JP2009529794A (ja) | 2009-08-20 |
JP5122490B2 JP5122490B2 (ja) | 2013-01-16 |
Family
ID=37909420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008558672A Expired - Fee Related JP5122490B2 (ja) | 2006-03-12 | 2007-02-28 | 半導体試料のドーピング密度の算出方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7841015B2 (ja) |
EP (1) | EP1994395B1 (ja) |
JP (1) | JP5122490B2 (ja) |
DE (2) | DE102006011660A1 (ja) |
WO (1) | WO2007104432A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005038245B4 (de) * | 2005-08-12 | 2010-09-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung zur Schwingungsanregung eines einseitig in einem Rasterkraftmikroskop befestigten Federbalkens |
US8471580B2 (en) * | 2009-03-31 | 2013-06-25 | Agilent Technologies, Inc. | Dopant profile measurement module, method and apparatus |
US8315819B1 (en) | 2009-09-25 | 2012-11-20 | Agilent Technologies, Inc. | Method and apparatus for determining dopant density in semiconductor devices |
US8689358B2 (en) * | 2010-06-28 | 2014-04-01 | International Business Machines Corporation | Dynamic mode nano-scale imaging and position control using deflection signal direct sampling of higher mode-actuated microcantilevers |
US8752211B2 (en) * | 2012-08-03 | 2014-06-10 | Ut-Battelle, Llc | Real space mapping of oxygen vacancy diffusion and electrochemical transformations by hysteretic current reversal curve measurements |
KR101459716B1 (ko) | 2012-09-11 | 2014-11-12 | 고려대학교 산학협력단 | 표면전하현미경을 이용한 나노 전도성 고분자의 도핑 여부 검출 방법 |
JP2014203665A (ja) * | 2013-04-04 | 2014-10-27 | 本田技研工業株式会社 | 電極材料の定量化方法および定量化装置 |
TWI614343B (zh) * | 2014-04-21 | 2018-02-11 | 國立清華大學 | 膜電化學訊號之檢測系統 |
RU2649136C1 (ru) * | 2017-04-25 | 2018-03-29 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) | Способ определения легирующих добавок золота и кобальта в полупроводниковых материалах на основе диоксида олова |
CN112490216B (zh) * | 2020-11-27 | 2023-09-19 | 上海华力微电子有限公司 | 用于表征pn结耗尽区特征的wat测试结构和方法 |
AT525244B1 (de) * | 2021-10-12 | 2023-02-15 | Univ Wien Tech | Verfahren zum betrieb eines rasterkraftmikroskops und regel- und steuereinheit hierfür |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09505899A (ja) * | 1995-02-07 | 1997-06-10 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | カンチレバー振れセンサ及びその使用方法 |
JP2000131216A (ja) * | 1998-10-27 | 2000-05-12 | Toshiba Corp | 走査型近接場光学装置 |
JP2001324439A (ja) * | 2000-03-10 | 2001-11-22 | Fujitsu Ltd | 不純物濃度測定方法、stm測定方法及びsts測定方法 |
JP2003318239A (ja) * | 2002-04-11 | 2003-11-07 | Solid State Measurements Inc | 半導体ウェハのドーパント濃度判定方法及び判定装置 |
JP2003329568A (ja) * | 2002-05-13 | 2003-11-19 | Nippon Telegr & Teleph Corp <Ntt> | 走査型容量顕微鏡およびこの顕微鏡を用いた測定方法 |
Family Cites Families (7)
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US5599907A (en) * | 1989-05-10 | 1997-02-04 | Somatogen, Inc. | Production and use of multimeric hemoglobins |
CA2122717C (en) * | 1991-11-08 | 2003-07-15 | David C. Anderson | Hemoglobins as drug delivery agents |
US5461907A (en) * | 1993-03-23 | 1995-10-31 | Regents Of The University Of California | Imaging, cutting, and collecting instrument and method |
JP3700910B2 (ja) * | 1997-10-16 | 2005-09-28 | セイコーインスツル株式会社 | 半導体歪センサ及びその製造方法ならびに走査プローブ顕微鏡 |
US6185991B1 (en) * | 1998-02-17 | 2001-02-13 | Psia Corporation | Method and apparatus for measuring mechanical and electrical characteristics of a surface using electrostatic force modulation microscopy which operates in contact mode |
US20030234358A1 (en) * | 2002-06-20 | 2003-12-25 | Nec Research Institute, Inc. | Piezo-noise microscope and methods for use thereof |
US7473887B2 (en) * | 2002-07-04 | 2009-01-06 | University Of Bristol Of Senate House | Resonant scanning probe microscope |
-
2006
- 2006-03-12 DE DE102006011660A patent/DE102006011660A1/de not_active Withdrawn
-
2007
- 2007-02-28 DE DE502007000995T patent/DE502007000995D1/de active Active
- 2007-02-28 WO PCT/EP2007/001736 patent/WO2007104432A1/de active Application Filing
- 2007-02-28 JP JP2008558672A patent/JP5122490B2/ja not_active Expired - Fee Related
- 2007-02-28 EP EP07711715A patent/EP1994395B1/de not_active Expired - Fee Related
- 2007-02-28 US US12/281,806 patent/US7841015B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09505899A (ja) * | 1995-02-07 | 1997-06-10 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | カンチレバー振れセンサ及びその使用方法 |
JP2000131216A (ja) * | 1998-10-27 | 2000-05-12 | Toshiba Corp | 走査型近接場光学装置 |
JP2001324439A (ja) * | 2000-03-10 | 2001-11-22 | Fujitsu Ltd | 不純物濃度測定方法、stm測定方法及びsts測定方法 |
JP2003318239A (ja) * | 2002-04-11 | 2003-11-07 | Solid State Measurements Inc | 半導体ウェハのドーパント濃度判定方法及び判定装置 |
JP2003329568A (ja) * | 2002-05-13 | 2003-11-19 | Nippon Telegr & Teleph Corp <Ntt> | 走査型容量顕微鏡およびこの顕微鏡を用いた測定方法 |
Also Published As
Publication number | Publication date |
---|---|
US20090100554A1 (en) | 2009-04-16 |
US7841015B2 (en) | 2010-11-23 |
EP1994395A1 (de) | 2008-11-26 |
DE502007000995D1 (de) | 2009-08-13 |
EP1994395B1 (de) | 2009-07-01 |
JP5122490B2 (ja) | 2013-01-16 |
DE102006011660A1 (de) | 2007-09-13 |
WO2007104432A1 (de) | 2007-09-20 |
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