JP2009302397A - Vapor growth method, and vapor growth device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor growth method and a vapor growth device that film-form a laminate film where a profile of desired impurity concentration is formed. <P>SOLUTION: The vapor growth device includes a first film formation chamber 102 and a second film formation chamber 103 each of which contains a silicon wafer 101, and a conveyance mechanism 124, and conveys the silicon wafer to the second film formation chamber 103 speedily after a first film is film-formed to film-form a second film. Consequently, internal diffusion of an impurity from the first film having been film-formed to the silicon wafer 101 is deterred to obtain the laminate film where the profile of the desired impurity concentration is formed. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a vapor phase growth method and a vapor phase growth apparatus.

  For example, in the manufacture of semiconductor devices with multiple layers formed on a substrate, such as high-performance bipolar transistors that require high-speed amplification and power MOSFETs for controlling high power, the properties of the layers An epitaxial growth technique that can control the above is utilized.

In the case where a plurality of crystal film layers doped with impurities of a predetermined concentration are formed on the surface of a silicon wafer, a thin film layer is formed by supplying a plurality of film forming gases having different raw material components in stages. . When this was performed in the same reactor, it was necessary to switch the film forming gas supplied during the process. When the film forming gas supplied in the same reaction furnace is switched, it is necessary to prevent the mixture of a plurality of gas components and the remaining of the previously supplied gas components in the reaction furnace. For this reason, purging by supplying hydrogen (H ₂ ) or the like into the reaction furnace before switching the gas.

Also disclosed is a method for manufacturing a silicon epitaxial wafer in which an oxide film is formed on the front or back surface of a silicon wafer after a thin film layer is formed, thereby preventing fluctuations in impurity concentration due to autodoping (see Patent Document 1). . In addition to suppressing the diffusion of impurities by forming an oxide film on the silicon wafer, the thin film layer to be formed by suppressing the auto-doping phenomenon by controlling the temperature when peeling the oxide film formed on the surface low Is adjusted to a desired impurity concentration.
JP-A-2005-150364

However, if the inside of the reaction furnace is purged with H ₂ while the substrate is housed in a high-temperature reaction furnace, the internal diffusion of impurities doped in the previously formed film proceeds. As a result, the profile of the impurity concentration in the vicinity of the boundary of film formation becomes gradual, and it becomes impossible to control the withstand voltage and the resistance value as set. That is, there has been a problem that desired device characteristics cannot be obtained due to a change in the impurity concentration profile.

  Further, since it takes a long time to purge the inside of the reaction furnace in order to switch the gas to be supplied, it is also a problem that the throughput of the vapor phase growth apparatus is lowered.

  Furthermore, in the method as disclosed in Patent Document 1, an additional step of peeling the oxide film partially or entirely by immersing the substrate in hydrofluoric acid is required, which further complicates the work. Therefore, the method as disclosed in Patent Document 1 has not yet been sufficient for improving the throughput because the number of necessary work steps increases.

As described above, in the case where a plurality of films are continuously formed on the same substrate, there are problems such as auto-doping at the time of switching the film forming gas and complicated work processes.
Therefore, there has been a demand for a method capable of forming a laminated film in which a desired impurity concentration profile is formed at the boundary of film formation without exposing the substrate to an unnecessary high temperature state for a long time.

  The present invention has been devised in view of these problems. That is, an object of the present invention is to provide a vapor phase growth method capable of forming a laminated film having a desired impurity concentration profile formed on the same substrate.

  It is another object of the present invention to provide a vapor phase growth apparatus capable of forming a laminated film having a desired impurity concentration profile formed on the same substrate.

  Other objects and advantages of the present invention will become apparent from the following description.

The vapor phase growth method of the present invention comprises:
In a vapor phase growth method for forming a predetermined film on a substrate,
The substrate is accommodated in the first film formation chamber, the first film is formed,
The substrate on which the first film is formed is transferred to the second film formation chamber without being exposed to the outside air,
The second film is formed on the substrate on which the first film is formed.

  In the first aspect of the present invention, it is preferable that the substrate is heated to a temperature lower than the growth temperature after the first film is formed and before the second film is formed. .

The vapor phase growth apparatus of the present invention is
A load lock chamber where substrates are loaded and unloaded,
A first deposition chamber for depositing a first film on a substrate;
A second film formation chamber for forming a film on the substrate on which the first film is formed;
A transport mechanism for transporting the substrate is provided, and a standby chamber provided by connecting the load lock chamber and the first film formation chamber and the second film formation chamber is provided.

  In the second aspect of the present invention, the standby chamber is preferably provided with a substrate heating mechanism for heating the substrate.

  In the second aspect of the present invention, an opening / closing part for maintaining airtightness is provided at each connection part of the first film formation chamber, the second film formation chamber, the load lock chamber, and the standby chamber. It is preferable.

  According to the first aspect of the present invention, since the transition from the formation of the first film to the formation of the second film can be performed quickly, a laminated film having a desired impurity concentration profile is formed on the substrate. It can be a vapor phase growth method for forming a film.

  Further, according to the second aspect of the present invention, it is possible to provide a vapor phase growth apparatus capable of forming a laminated film on which a desired impurity concentration profile is formed on a substrate.

First, the vapor phase growth apparatus of this embodiment will be described in detail.
FIG. 1 is a schematic plan view showing a configuration of a single wafer vapor phase growth apparatus 100 according to the present embodiment. In this embodiment, a silicon wafer 101 is used as an example of a substrate. However, the present invention is not limited to this, and a wafer made of another material may be used according to circumstances.

As shown in FIG. 1, the vapor deposition apparatus 100 includes a first film formation chamber 102, a second film formation chamber 103, a standby chamber 120, a load / load lock chamber 121 a that is an example of a load lock chamber, and a load / unload load lock. A chamber 121b, a transfer mechanism 122, a supply unit 123a, and a carry-out unit 123b are provided.
Here, in FIG. 1, components other than the configuration of the vapor phase growth apparatus 100 necessary for describing the embodiment are omitted. Further, the scales of the illustrated members and the like do not coincide with the actual objects, and are adjusted to a size that can be clearly specified as appropriate. The same applies to each figure below.

  The standby chamber 120 is configured by a casing that is octagonal in plan view and can hold a predetermined pressure. The standby chamber 120 is disposed in a state of being connected to each other between the carry-in load lock chamber 121a, the carry-out load lock chamber 121b, the first film formation chamber 102, and the second film formation chamber 103.

Between the standby chamber 120, the first film formation chamber 102 and the second film formation chamber 103, and between the standby chamber 120 and the load-in load lock chamber 121a and the load-in load lock chamber 121b, an opening / closing section 125 having a gate valve, respectively. Is interposed, and airtightness is maintained. By opening the gate valve and operating the vacuum-compatible transfer mechanism 124 provided in the standby chamber 120, the silicon wafer 101 can be carried in and out. The transport mechanism 124 holds the silicon wafer 101 and delivers it to each mechanism.
Here, in order to identify the plurality of opening / closing sections 125, the connecting portion between the loading load lock chamber 121a and the standby chamber 120 is defined as the connecting section between the opening / closing portion 125a and the standby chamber 120 and the first film forming chamber 102. The opening / closing portion 125b, the connection portion between the standby chamber 120 and the second film forming chamber 103 is referred to as an opening / closing portion 125c, and the connection portion between the standby chamber 120 and the unloading load lock chamber 121b is referred to as an opening / closing portion 125d.

In the standby chamber 120, a wafer heating mechanism 126, which is an example of a substrate heating mechanism for heating the silicon wafer 101, is provided. The wafer heating mechanism 126 is preferably provided above the transfer mechanism 124 in order to efficiently heat the transfer mechanism 124 when the transfer mechanism 124 grips the silicon wafer 101.
Thus, when the silicon wafer 101 is carried into the first film formation chamber 102 or unloaded from the first film formation chamber 102, the silicon wafer 101 is moved to a predetermined temperature by the wafer heating mechanism 126 in the standby chamber 120. Can be kept heated. As a result, the silicon wafer 101 can be heated or cooled in stages, and the silicon wafer 101 can be prevented from being damaged by thermal stress caused by a rapid temperature change.

  The loading load lock chamber 121a connected to the standby chamber 120 temporarily stores the silicon wafer 101 taken out from the supply unit 123a by the transfer mechanism 122 and loaded. Then, the silicon wafer 101 is accommodated in the loading load lock chamber 121a to be shielded from the outside air. Then, the pressure in the carry-in load lock chamber 121a is adjusted to a predetermined pressure while replacing the atmosphere in the carry-in load lock chamber 121a with an inert gas. Accordingly, the standby chamber 120, the first film formation chamber 102, and the second film formation chamber 103 are also shielded from the outside air.

  Then, the carry-out load lock chamber 121b temporarily stores the silicon wafer 101 that has been carried out after film formation on the silicon wafer 101, which will be described later, and cools it to a predetermined temperature in order to carry it out. Then, the pressure is returned to normal pressure while replacing the inside of the carry-out load lock chamber 121b with the outside air, and the silicon wafer 101 is carried out to the outside.

FIG. 2 is a schematic conceptual diagram showing the first film forming chamber 102 of the present embodiment. Here, since members and the like constituting the second film formation chamber 103 are substantially the same as those of the first film formation chamber 102, description thereof is omitted because they are common to both.
In the first film forming chamber 102, the silicon wafer 101 transferred by the standby chamber 120 is accommodated and vapor phase growth is performed.

  Inside the first film formation chamber 102, a SiC (silicon carbide) susceptor 104 on which the silicon wafer 101 to be accommodated is placed is provided on the upper part of a substantially cylindrical rotating portion 105 made of SiC. Yes. The susceptor 104 has a ring shape having an opening at the center, and an outer end portion is fixed to the rotating portion 105. A concave portion on which the silicon wafer 101 is placed is formed at the inner end of the susceptor 104, and the movement of the silicon wafer 101 in a substantially horizontal direction can be restricted and stably supported.

  The rotating portion 105 to which the susceptor 104 is fixed has a lower portion formed in comparison with the upper portion, and is connected to a rotating mechanism (not shown) outside the first film formation chamber 102. Therefore, it can be rotated at a predetermined number of rotations with a straight line orthogonal to the center of the horizontal section of the rotating unit 105 as a rotation axis.

A heating unit 106 is disposed immediately below the back surface side of the susceptor 104. The heating unit 106 includes an in-heater 106a and an out-heater 106b. The in-heater 106 a can heat the vicinity of the center portion of the silicon wafer 101. The outheater 106b can heat both the peripheral edge of the silicon wafer 101 and the susceptor 104 on which the silicon wafer 101 is placed.
An out-heater 106b is provided separately from the in-heater 106a to assist the heating of the peripheral edge of the silicon wafer 101, which is likely to radiate heat because it is in contact with the susceptor 104. The uniformity of the in-plane temperature distribution can be improved.

  A deposition gas supply unit 150 that supplies a deposition gas for vapor-phase-growing the first film on the surface of the silicon wafer 101 is provided above the first deposition chamber 102. In addition, a shower plate 151 in which a large number of deposition gas discharge ports are formed is attached to the end of the deposition gas supply unit 150 on the silicon wafer 101 side. The shower plate 151 is disposed to face the silicon wafer 101, and can discharge a film forming gas toward the surface of the silicon wafer 101.

  A plurality of gas exhaust units 152 that exhaust the gas in the first film formation chamber 102 are provided below the first film formation chamber 102. The exhaust unit 152 is connected to an exhaust mechanism (not shown) provided outside the first film forming chamber 102, removes the film forming gas after vapor phase growth, and discharges it outside the first film forming chamber 102. can do.

The first film formation chamber 102 is maintained at a normal pressure or a predetermined pressure, for example, 50 to 700 Torr (6.67 × 10 ³ Pa to 9.3 × 10 ⁴ Pa) by a normal pressure or a vacuum pump (not shown). While rotating the silicon wafer 101 using the heating unit 106, the rotating unit 105 is rotated at a predetermined number of rotations. A film forming gas in which the film forming components of the first film are mixed is supplied from the shower plate 151 toward the silicon wafer 101 that is sufficiently heated and has a uniform temperature distribution.
Thereby, a high quality vapor phase growth film can be formed on the surface of the silicon wafer 101.

  In the second film formation chamber 103 provided adjacently, the second film can be formed in the same manner as the first film formation chamber 102 described above.

  Since the vapor phase growth apparatus 100 of the present embodiment includes the first film formation chamber 102 and the second film formation chamber 103, different film formation gases can be supplied to the respective film formation chambers. By rapidly carrying the silicon wafer 101 from the first film formation chamber to the second film formation chamber, a wafer on which a laminated film having a desired impurity concentration profile can be manufactured.

  Next, the vapor phase growth method of this embodiment will be described in detail.

  FIG. 3 is a graph showing a simulation of the elapsed time of the work and the temperature state of the silicon wafer 101 when film formation is performed using the vapor phase growth method of the present embodiment. FIG. 4 is a graph showing a simulation of the elapsed time of the film forming operation and the temperature condition of the silicon wafer when the vapor deposition apparatus having only one film forming chamber is used. Moreover, the points shown on the graphs of both FIG. 3 and FIG. 4 indicate the timing when each work process starts or ends. With reference to these, the vapor phase growth method of the present embodiment and the conventional method will be compared and described. Note that the horizontal axis of the graphs shown in FIGS. 3 and 4 indicates the elapsed time of the film forming operation.

First, the silicon wafer 101 taken out from the supply unit 123a by the transfer mechanism 122 is transferred to the loading load lock chamber 121a. Here, for example, an n-type silicon wafer 101 processed and polished after an n-type impurity such as phosphorus (P) is added is used. Then, a gas such as hydrogen (H ₂ ) is supplied into the carry-in load lock chamber 121a that is blocked from outside air to replace the atmosphere. Then, the inside of the loading load lock chamber 121a is regulated so as to have substantially the same pressure as that of the adjacent standby chamber 120.

Next, the gate valve of the opening / closing portion 125a is opened, and the silicon wafer 101 temporarily stored in the loading load lock chamber 121a is accommodated in the standby chamber 120 by the transfer mechanism 124 (point a in FIG. 3). The silicon wafer 101 is gradually heated to about 900 ° C. by a wafer heating mechanism 126 provided in the standby chamber 120. This is to prevent the silicon wafer 101 from being damaged by thermal stress when it is carried into the first film formation chamber 102. Therefore, the temperature to be heated is not limited to this, and may be any temperature as long as it is controlled at a temperature lower than the film formation temperature and is not damaged by thermal stress.
At this time, the standby chamber 120 is adjusted in advance to approximately the same pressure as that of the adjacent first film formation chamber 102 and second film formation chamber 103.

  Further, when the gate valve of the opening / closing part 125a is opened for transporting the silicon wafer 101, the gate valves of the other opening / closing parts 125 are not opened. The opening / closing part 125 is interlocked with each other and controlled so that two or more gate valves are not simultaneously opened. Thereby, it is possible to prevent the mechanism after the load-in load lock chamber 121a from being contaminated by the atmosphere or components of the film forming gas. The same applies to the other opening / closing sections 125.

  Next, the gate valve of the opening / closing portion 125 b is opened, and the silicon wafer 101 is transferred from the standby chamber 120 to the first film formation chamber 102. The silicon wafer 101 accommodated in the first film formation chamber 102 is placed on the susceptor 104 (point b in FIG. 3). After the transfer mechanism 124 carrying the silicon wafer 101 returns to the standby chamber 120, the gate valve of the opening / closing portion 125b is closed, the gas flow is shut off, and the first film formation chamber 102 is kept at a predetermined pressure. It is regulated. The silicon wafer 101 placed on the susceptor 104 is rotated at a predetermined rotation speed by the rotation of the rotating unit 105. Then, the silicon wafer 101 is heated by the heating unit 106 to, for example, about 1100 ° C., which is a film formation temperature (point c in FIG. 3).

Then, a film forming gas is supplied from the shower plate 151 to the sufficiently heated silicon wafer 101 to form a first film.
The film forming gas supplied at this time is any one of monosilane (SiH ₄ ), dichlorosilane (SiH ₂ Cl ₂ ), trichlorosilane (SiHCl ₃ ) and the like, which are raw materials for silicon crystals, and phosphine (PH ₃ ) And the like, and H ₂ or the like serving as a carrier gas are mixed at a predetermined ratio. By adding phosphine which is a dopant gas containing phosphorus (P), a first film having n-type electrical characteristics can be formed in the first film formation chamber 102.

In the reaction environment as described above, a desired film thickness can be obtained on the surface of the silicon wafer 101 by forming the first film by t ₁ from the points c to d in the graph of FIG.

Then, after the first film is formed, heating by the heating unit 106 and supply of the film forming gas to the silicon wafer 101 are stopped, so that the silicon wafer 101 is unloaded from the first film forming chamber 102. Ready to go.
Next, the gate valve of the opening / closing portion 125 b is opened, and the silicon wafer 101 on which the first film is formed by the transfer mechanism 124 is accommodated from the first film formation chamber 102 into the standby chamber 120. After being accommodated in the standby chamber 120, the gate valve of the opening / closing part 125b is closed, and then the gate valve of the opening / closing part 125c is opened. Then, the silicon wafer 101 is transferred to the second film formation chamber 103 (point e in FIG. 3).
During this time, the silicon wafer 101 is radiating heat and is controlled to about 900 ° C. by the wafer heating mechanism 126.

The silicon wafer 101 carried into the second film formation chamber 103 is placed on the susceptor 104 as in the case of the first film formation chamber 102. Then, while being rotated by the rotating unit 105, the heating unit 106 is heated to a film forming temperature of about 1100 ° C. (point f in FIG. 3). A second film is formed by supplying a film forming gas to the silicon wafer 101 in this state.
The film forming gas supplied at this time is any one of monosilane, dichlorosilane, trichlorosilane, and the like, which are silicon crystal raw materials, dopant gas such as diborane (B ₂ H ₆ ), and H, which is a carrier gas. ₂ etc. are mixed at a predetermined ratio. By adding a dopant gas containing boron (B), a second film exhibiting p-type electrical characteristics can be formed in the second film formation chamber 103.

In the reaction environment as described above, the second film is formed by t ₂ from the point f to g shown in the graph of FIG. 3, so that a p-type gas having a desired film thickness is formed on the silicon wafer 101. A phase growth film can be formed.
In this way, a laminated film composed of the n-type first film and the p-type second film is formed on the same silicon wafer 101.

In FIG. 3, t ₃ divided from point d to f indicates the time required for shifting from the formation of the first film to the formation of the second film in the present embodiment. In the present embodiment, operations performed by t _3, the silicon wafer 101 is transported from the first deposition chamber 102 to the second film forming chamber 103, a process until it is heated to a deposition temperature, the The specific required time is, for example, about several seconds to several minutes.
Compared with this, T ₃ divided from point D to F in FIG. 4 is the first film formation to the second film in the conventional vapor phase growth apparatus having only one film formation chamber. The time required for shifting to film formation is shown. In conventional vapor phase growth apparatus, the deposition chamber of the purge step is required in T _3, the required time of T ₃ was also the case where a few tens of minutes or more.
That is, in the present embodiment, the time required for t ₃ can be reduced to about 1/10 or less of T ₃ in the conventional vapor phase growth method. For this reason, it is possible to shorten the time required for the entire vapor phase growth process, and it is possible to improve the throughput as compared with the conventional vapor phase growth method.

Further, in the present embodiment, since the silicon wafer 101 is not exposed to a high temperature close to the film formation temperature during t ₃ , the internal diffusion of impurities hardly occurs from the first film to the silicon wafer 101. Therefore, the impurity concentration at the boundary between the silicon wafer 101 and the first film is unlikely to vary, and the resistance value and the withstand voltage value can be precisely controlled.

  Furthermore, in the present embodiment, the silicon wafer 101 is not exposed to unnecessary high temperatures and the influence of autodoping need not be taken into consideration, so there is no need to form an oxide film or the like for suppressing this. This eliminates the need for a step of removing the oxide film for the next film formation, and contributes to simplification of the entire work process.

However, in the conventional vapor phase growth apparatus, the temperature of the silicon wafer was adjusted lower than the film formation temperature embodiment is also conceivable to perform the purge process in the case of performing the T _3. According to this, internal diffusion of impurities from the vapor growth film to the silicon wafer can be suppressed. However, since the time required for purging in the film forming chamber does not change, the vapor phase growth method of this embodiment is still excellent in terms of improving the throughput.

After the film formation of the second film is completed as described above, preparation for unloading the silicon wafer 101 is performed in the same manner as the first film formation chamber 102. Next, the gate valve of the opening / closing part 125 c is opened, and the silicon wafer 101 is accommodated in the standby chamber 120 from the second film formation chamber 103 by the transport mechanism 124. After the transfer is completed, the gate valve of the opening / closing part 125c is closed, and then the gate valve of the opening / closing part 125d is opened.
Then, the silicon wafer 101 is transferred to an unloading load lock chamber 121b for unloading outside the apparatus (point h in FIG. 3).
During this time, the silicon wafer 101 is radiating heat and is controlled to about 900 ° C. by the wafer heating mechanism 126.

  Then, with the gate valve of the opening / closing part 125d closed, the atmosphere in the unloading load lock chamber 121b containing the silicon wafer 101 is changed to normal pressure while replacing with the outside air. Then, after the silicon wafer 101 is cooled to a predetermined temperature, it is sent out from the unloading load lock chamber 121b to the unloading unit 123b by the transfer mechanism 122 (point i in FIG. 3).

  By the vapor phase growth method described above, a wafer in which a laminated film composed of an n-type first film and a p-type second film having an electrical property profile formed on the same silicon wafer 101 is manufactured. be able to.

The embodiments of the present invention have been described in detail above with reference to specific examples.
The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention.

  For example, the vapor phase growth apparatus 100 according to the embodiment of the present invention includes two film formation chambers, a first film formation chamber 102 and a second film formation chamber 103, and has a two-layer structure on the silicon wafer 101. A laminated film was formed. However, since the structure of the laminated film may be two or more, the number of film formation chambers is not limited to this, and three or more film formation chambers may be provided. In addition, using this, a laminated film having a structure of three or more layers may be formed on the silicon wafer 101.

  In the embodiment of the present invention, a single silicon wafer 101 is carried into each of the two film forming chambers once to form a laminated film. However, a laminated film having a multilayer structure may be formed by carrying the film into each film forming chamber twice or more to form a film. Since the transfer mechanism 124 can freely carry the silicon wafer 101 into and out of any film forming chamber or load lock chamber, the transfer paths of the silicon wafer 101 as described above do not necessarily coincide.

  As an example of an embodiment of the present invention, a general vapor phase growth apparatus and a vapor phase growth method have been described. However, the present invention is not limited to this, and an epitaxial growth apparatus for forming a single crystal film or a polysilicon film is formed. Even if it is an apparatus or a method, it is possible to obtain the same effect by applying the present invention.

  In addition, although descriptions of parts that are not directly required for the present invention, such as apparatus configuration and control method, are omitted, the required apparatus configuration, control method, and the like can be appropriately selected and used. .

  In addition, all the vapor phase growth apparatuses that include the elements of the present invention and can be appropriately modified by those skilled in the art, and the shapes of the respective members are included in the scope of the present invention.

1 is a schematic plan view showing a configuration of a single wafer type vapor phase growth apparatus in an embodiment of the present invention. It is a typical conceptual diagram which shows the film-forming chamber of embodiment of this invention. It is the graph which showed the simulation of the elapsed time of the operation | work at the time of forming into a film using the vapor phase growth method of this embodiment of this invention, and the temperature condition of a silicon wafer. It is the graph which showed the simulation of the elapsed time of the film-forming operation | work at the time of performing with the vapor phase growth apparatus which has only one film-forming chamber, and the temperature condition of a silicon wafer.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 ... Vapor growth apparatus 101 ... Silicon wafer 102 ... 1st film-forming chamber 103 ... 2nd film-forming chamber 104 ... Susceptor 105 ... Rotating part 106 ... Heating part 106a ... In heater 106b ... Out heater 120 ... Standby room 121a ... Carry-in load lock chamber 121b ... Carry-out load lock chamber 122 ... Transfer mechanism 123a ... Supply unit 123b ... Carry-out unit 124 ... Transport mechanism 125 ... Opening / closing part 126 ... Wafer heating mechanism 150 ... Film-forming gas supply part 151 ... Shower plate 152 ... Gas Exhaust part

Claims (5)

In a vapor phase growth method for forming a predetermined film on a substrate,
Storing the substrate in a first film formation chamber to form a first film;
Transporting the substrate on which the first film is formed to the second film formation chamber without exposing it to the outside air;
A vapor deposition method, comprising: forming a second film on the substrate on which the first film is formed.   2. The gas according to claim 1, wherein the substrate is heated to a temperature lower than a growth temperature between the time when the first film is formed and the time when the second film is formed. Phase growth method. A load lock chamber where substrates are loaded and unloaded,
A first deposition chamber for depositing a first film on the substrate;
A second film formation chamber for forming a film on the substrate on which the first film is formed;
A transfer mechanism for transferring the substrate is provided, and a standby chamber provided by connecting the load lock chamber and the first film formation chamber and the second film formation chamber is provided. A vapor phase growth apparatus.   The vapor deposition apparatus according to claim 3, wherein the standby chamber is provided with a substrate heating mechanism for heating the substrate.   An opening / closing part for maintaining airtightness is provided at each connection part of the first film formation chamber, the second film formation chamber, the load lock chamber, and the standby chamber. The vapor phase growth apparatus according to claim 3 or 4.

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