JP2009280909A5 - - Google Patents

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Publication number
JP2009280909A5
JP2009280909A5 JP2009103940A JP2009103940A JP2009280909A5 JP 2009280909 A5 JP2009280909 A5 JP 2009280909A5 JP 2009103940 A JP2009103940 A JP 2009103940A JP 2009103940 A JP2009103940 A JP 2009103940A JP 2009280909 A5 JP2009280909 A5 JP 2009280909A5
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JP
Japan
Prior art keywords
substrate
material layer
laser beam
film
light absorption
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JP2009103940A
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English (en)
Japanese (ja)
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JP2009280909A (ja
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Priority to JP2009103940A priority Critical patent/JP2009280909A/ja
Priority claimed from JP2009103940A external-priority patent/JP2009280909A/ja
Publication of JP2009280909A publication Critical patent/JP2009280909A/ja
Publication of JP2009280909A5 publication Critical patent/JP2009280909A5/ja
Withdrawn legal-status Critical Current

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JP2009103940A 2008-04-25 2009-04-22 成膜方法および発光装置の作製方法 Withdrawn JP2009280909A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009103940A JP2009280909A (ja) 2008-04-25 2009-04-22 成膜方法および発光装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008114864 2008-04-25
JP2009103940A JP2009280909A (ja) 2008-04-25 2009-04-22 成膜方法および発光装置の作製方法

Publications (2)

Publication Number Publication Date
JP2009280909A JP2009280909A (ja) 2009-12-03
JP2009280909A5 true JP2009280909A5 (cg-RX-API-DMAC10.html) 2012-05-31

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JP2009103940A Withdrawn JP2009280909A (ja) 2008-04-25 2009-04-22 成膜方法および発光装置の作製方法

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JP (1) JP2009280909A (cg-RX-API-DMAC10.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5291607B2 (ja) * 2008-12-15 2013-09-18 株式会社半導体エネルギー研究所 発光装置の作製方法
CN111549316B (zh) * 2020-06-22 2022-07-15 京东方科技集团股份有限公司 蒸镀用掩膜版

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5159021B2 (ja) * 2003-12-02 2013-03-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4831961B2 (ja) * 2003-12-26 2011-12-07 株式会社半導体エネルギー研究所 半導体装置の作製方法、選択方法
JP2005210103A (ja) * 2003-12-26 2005-08-04 Semiconductor Energy Lab Co Ltd レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法
JP5314857B2 (ja) * 2006-07-28 2013-10-16 株式会社半導体エネルギー研究所 半導体装置の作製方法

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