JP2009280851A - Film deposition apparatus and film deposition method, and method of manufacturing light emitting apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of easily and reliably adjusting the film deposition rate at low cost. <P>SOLUTION: A film deposition apparatus 1 comprises a substrate installation table on which a substrate is installed, a vapor deposition source 2 having a space capable of storing substances to be vapor-deposited on the substrate, a heating means for giving heat for fusion and evaporation of the substance, a lid 2F having a plurality of first area R1 and second area R2 having opening areas different from each other, and a shutter 3 which closes one area when opening the other area out of the first and second areas (R1, R2) to the substrate. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a film forming apparatus and a film forming method, and a method for manufacturing a light emitting device such as an organic EL (Electro Luminescent) device.

Conventionally, a technique for forming a thin film by depositing a substance melted and evaporated by heating on a substrate has been widely performed. The substance efficiently reaches the substrate by scattering or flying in the vacuum atmosphere.
Such a vapor deposition technique is an almost indispensable technique for manufacturing various electronic devices or various circuit element substrates constituting the electronic apparatus. More specifically, for example, various substrates constituting a liquid crystal display device or an organic EL device, more specifically, various circuit elements such as TFTs (Thin Film Transistors) formed on the substrate, or Various electrodes (anode and cathode), wiring, and the like are manufactured using this deposition technique as appropriate.

  In such a deposition technique, various parameters are involved in the suitability of the film forming process. For example, starting from what to use as the substance (that is, what kind of material is used to manufacture what thin film), the material of the evaporation source such as a hearth liner or crucible that contains the substance, Heating temperature, degree of vacuum, distance between evaporation source and substrate, substrate preheating temperature, deposition time, and so on. Further, according to these basic conditions, the film forming speed, the thickness (film thickness) of the thin film, the structure of the thin film, the structure such as the crystal structure, and the like are defined, and finally the performance of the thin film is influenced.

As a film forming apparatus for using such a vapor deposition technique, for example, those disclosed in Patent Documents 1 and 2 below are known.
JP 2000-297360 A JP2004-43840

By the way, as described above, in the vapor deposition technique, various parameters are related to the suitability of the film forming process, and among them, the influence of the film forming speed is not particularly negligible. This is because the magnitude of the film forming speed directly determines the length of the film forming process and thus greatly affects the productivity of the thin film. However, the problem relating to the deposition rate is not a simple problem that the larger the better. This is because the film forming speed affects the electric resistance value and flatness of the thin film.
As described above, in general, complicated consideration is required for setting the film formation rate. From a more general viewpoint, it can be said that it is necessary to set an appropriate film formation rate, but more specifically, an appropriate change in the film formation rate according to various situations or in accordance with time. There may be cases where adjustment is necessary. Such a case is particularly necessary when the thin film to be formed is a thin film made of an alloy or a compound using a plurality of substances.

  The above-mentioned patent documents 1 and 2 disclose the technique relating to the film forming speed as just described. That is, in Patent Document 1, when forming a cone-shaped emitter in a gap between gate electrodes formed in an island shape on a substrate, a deposition material is conventionally incident from an oblique direction. They are aware of the problem of slowing down and lengthening production time (see, for example, [0004] and [0011] in Patent Document 1). Further, Patent Document 2 has a problem awareness that “the film forming speed varies depending on the amount of the vapor deposition material and the film forming speed is difficult to be constant” ([0004] of Patent Document 2).

  However, in these documents, the most important purpose is to “improve” the film deposition rate (Patent Document 1), and the most important purpose is to “fix” the film deposition rate (Patent Document 2). . That is, in these documents, the viewpoint of “adjustment” of the film formation rate as described above is not seen at all.

Further, in Patent Document 1, two “film formation sources” are arranged at different distances from the substrate, and an evaporation material emitted from one of the film formation sources is obliquely incident on the substrate. Therefore, a relatively complicated configuration is adopted in which a “substrate holder configured to be swingable” (Claim 1 of Patent Document 1) is provided. Patent Document 2 also discloses a “film formation evaporation source heating mechanism for heating an evaporation material”, an “evaporation source forced heating mechanism” for consuming the remaining material, an “isolation chamber”, and a “local exhaust mechanism” (patent [Claim 1], [Claim 2], etc. of Document 2 are required, and as a result, the structure is relatively complicated ([FIG. 3] [FIG. 4] of Patent Document 2). Etc.).
As described above, the techniques disclosed in these documents have a relatively complicated apparatus configuration as a result, even if each object is successfully achieved. Therefore, there is also a problem that the cost of the finally manufactured thin film itself increases.

An object of the present invention is to provide a film forming apparatus and a film forming method capable of solving at least a part of the above-described problems, and a method for manufacturing a light emitting device.
Another object of the present invention is to provide a film forming apparatus and a film forming method that can solve the problems that occur in the film forming apparatus, the film forming method, and the method for manufacturing a light emitting device of this aspect.

  In order to solve the above-described problems, a film forming apparatus according to the present invention includes a substrate mounting base on which a substrate is installed, a storage body having a space capable of storing a substance for vapor deposition on the substrate, Heating means for applying heat for evaporating, a cover having a plurality of opening areas arranged to cover the space and having different opening areas, and one of the plurality of opening areas is defined as the substrate. And a shutter that closes the other opening region when opened.

According to the present invention, the film formation rate can be adjusted easily, reliably, and inexpensively.
More specifically, for example, in the present invention, if the cover has two opening regions, the opening areas of the two opening regions are different from each other. If the opening region is opened and the film forming step is performed, and if the other opening region is opened and the film forming step is performed in the second film forming step, the film forming speed in both steps will be different. This is because the larger the opening area, the higher the film forming speed, and the smaller the opening area, the lower the film forming speed. This switching is related only to the operation of the “shutter”. For this reason, according to the present invention, the film formation rate can be adjusted easily, reliably, and inexpensively.

In the film forming apparatus of the present invention, there are a plurality of the storage bodies, and each of the plurality of storage bodies stores different substances as the substances in the space, and the cover and the shutter include the plurality of storage bodies. You may comprise so that it may be provided corresponding to at least one of the storage bodies.
According to this aspect, a thin film in which a plurality of substances are mixed at a predetermined composition ratio can be suitably formed. For example:
That is, if there are two storage bodies (in this paragraph number and the next paragraph number, they are named “A storage body” and “B storage body”), one of them is the A storage body. May be provided with a non-obvious opening, a shutter and the like, and the other B storage body may include a cover (that is, a cover having two opening regions), a shutter and the like as already exemplified above. In this case, in the first step, the film forming process is performed using the first opening regions of the A storage body and the B storage body, and in the second step, only the B storage body and its second It is possible to perform a film forming process by using the opening region. According to this, a layer made of an alloy or a compound in which the substance derived from the A container and the substance derived from the B container are mixed at a predetermined composition ratio is formed in the first step, and the second step is performed. By the process, a layer made of only the substance derived from the B container is formed.

In such a case, it is preferable that the opening area of the second opening region used in the second step is larger than that used in the first step. This is due to the following circumstances.
That is, assuming that there is no “plurality of opening areas” according to the present invention, the B storage body has only a single opening area. However, the opening area of the opening region in this case is greatly restricted by how the composition ratio of the layer made of the alloy or the like must be made. That is, the upper limit of the opening area is determined with a certain necessity. As a result, in this state, if the above-described second stage process is executed, it becomes inefficient.
However, such a problem does not occur if the above-described conditions are satisfied. This is because, in the sense described above, the opening area is limited only for the first opening area, and the opening area of the second opening area can basically be freely determined. It is.
From the above, in such an embodiment, a thin film made of a single substance can be quickly produced as the second layer while suitably producing a thin film such as an alloy having a predetermined composition ratio as the first layer. And so on.
Also in such a place, the meaning of “a plurality of opening regions” referred to in the present invention is found.

Further, in the film forming apparatus of the present invention, each of the plurality of opening regions may include one or more holes.
According to this aspect, each open area includes one or more holes. For example, using the example of the two opening areas described above, the first opening area has two holes, and the second opening area has ten holes. Alternatively, for example, a case where both the first and second opening regions have five holes, but the area of each of the former holes is larger than that of the latter, etc. is also included in this aspect. .
In any case, according to this aspect, it is possible to more easily or suitably configure the opening regions having “opening areas different from each other”.
In general, in the Knudsen type evaporation source, if the area of the “hole” as referred to in this embodiment is sufficiently smaller than the area of the evaporation surface related to the substance in the space, the unit ejected from the hole It is known that the number of evaporated molecules of the substance per hour is proportional to the area of the pores (hereinafter sometimes referred to as “area proportional law”).

In this aspect, all the holes may have the same area, and the opening areas corresponding to the plurality of opening regions may be different from each other according to the difference in the number of the holes. .
According to this aspect, the opening area of a certain opening region is obtained as (number of holes) × (area of one hole) included in the opening region, but here (one piece Since the area of the holes) is constant for all the holes in this embodiment, the area of the opening is eventually proportional to the number of holes. Therefore, if the above-mentioned area proportionality law is used, the number of evaporation molecules per unit time is also It is proportional to the number of holes.
According to this, the adjustment of the film forming speed only needs to pay attention to the number of holes, and the adjustment becomes very easy. Of course, this also makes it extremely easy to adjust the composition ratio described above.

Further, in the film forming apparatus of the present invention, each of the opening areas corresponding to each of the plurality of opening regions is determined according to a composition ratio of the thin film by the substance to be formed on the substrate. You may comprise as follows.
According to this aspect, as is clear from what has already been described (refer to the description and reference using the terms “A container” and “B container” above), an alloy or compound having a predetermined composition ratio. The layer consisting of can be suitably formed.

In addition, the film forming apparatus of the present invention may be configured to further include an all-region closing shutter that closes all of the plurality of opening regions with respect to the substrate separately from the shutter.
According to this aspect, for example, the above-described “shutter” can be used exclusively for opening and closing between a plurality of opening areas, and the “all-area closing action shutter” referred to in this aspect can be used as the plurality of openings. It can be used exclusively for opening and closing the entire area. As a result, both the “shutter” and the “all-region closing action shutter” can reduce the number of possible postures. This is easy to understand if, for example, the “shutter” is assumed to be used to close all of the plurality of opening regions.
In general, the operation of the shutter in the film forming apparatus is performed in a vacuum. Considering that the operation is simpler and more preferable, this aspect is preferable in that sense. It can be said that it provides a configuration. That is, according to this aspect, the reliability of the operation of the film forming apparatus is further increased, and since high-level control or the like is not required for the shutter operation, the cost of the film forming apparatus can be reduced. it can.

  On the other hand, in order to solve the above problems, a film forming method according to the present invention has a storage body having a space capable of storing a substance to be deposited on a substrate, and an opening area which is disposed so as to cover the space and is different from each other. A film forming method using a cover having N open areas (N is a positive integer) having a shutter, and the shutter is a p-th open area (p is N in the N open areas). A first shutter operation step of opening the following positive integer) with respect to the substrate and closing other opening regions; a first film-forming step of applying heat to the substance in order to melt and evaporate the substance; Second shutter operation in which the shutter opens with respect to the q-th opening area (p is a positive integer less than N and q ≠ p) among the N opening areas and closes the other opening areas. Process and heat the material to melt and evaporate the material It includes a second film forming step.

According to the present invention, the film formation rate can be adjusted easily, reliably, and inexpensively. This is clear from the above description of the film forming apparatus according to the present invention.
In the present invention, since the number of opening regions is N, there may be third and subsequent shutter operation steps and film formation steps depending on circumstances. The same can be said of the “film forming apparatus” according to the present invention, which has “a plurality of opening regions” as its element.

In the film forming method of the present invention, in parallel with at least one of the first and second film forming steps, the material stored in a container different from the container is heated to melt and evaporate. It may be configured to further include a typical film forming step.
According to this aspect, a thin film in which a plurality of substances are mixed at a predetermined composition ratio can be suitably formed. This is also clear from the above description of the film forming apparatus according to the present invention (refer to the description using the terms “A storage body” and “B storage body” described above).
The “other storage body” referred to in the present invention may or may not have the above-described “cover”. The same can be said of the “film forming apparatus” according to one embodiment of the present invention, which includes “a plurality of storage bodies” as its element.

Further, the film forming method of the present invention may be configured such that the all-region closing shutter different from the shutter further includes a step of closing all of the N opening regions with respect to the substrate. .
According to this aspect, since it becomes possible to simplify the operation of the “shutter” up to the above and the “shutter for closing the entire area” in this aspect, the reliability of the method according to the present invention is further improved, Further, since high-level control or the like is not required for the shutter operation, cost reduction can be achieved.

  Furthermore, in order to solve the above-described problems, a method for manufacturing a light emitting device of the present invention includes a first and second electrode layers constructed on a substrate, and a light emitting element including a light emitting functional layer sandwiched between them. In the method for manufacturing a light emitting device, at least one of the first and second electrode layers is manufactured by any one of the various film forming methods described above.

  According to the present invention, since at least one electrode constituting a light emitting element such as an organic EL element is manufactured using the various film forming methods described above, various advantages are obtained. For a description of this point based on a more specific example, refer to the description of an embodiment described later (particularly, the description given with reference to FIGS. 9 and 10).

  Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 6. In addition to FIGS. 1 to 6 referred to here, in each drawing referred to below, the ratio of dimensions of each part may be appropriately different from the actual one.

As shown in FIG. 1, the film forming apparatus 1 according to this embodiment includes a vapor deposition boat 2, a shutter 3, a substrate installation table 4, a vacuum chamber 9, and the like.
Among them, the vacuum chamber 9 houses elements such as a vapor deposition boat 2 and a substrate installation table 4 related to actual film formation, as shown in the figure. The vacuum chamber 9 has an exhaust port 91, which is connected to a vacuum pump (not shown). The air in the vacuum chamber 9 is discharged to the outside by this vacuum pump. Thereby, the vacuum chamber 9 provides a vacuum atmosphere suitable for film formation on the substrate SK.

  The substrate placement table 4 can place the substrate SK on its surface (“lower” in the figure). As the substrate SK, for example, glass, single crystal silicon, or the like is applicable. The center of the substrate installation table 4 in FIG. 1 is connected to a rotation shaft 41 and can be rotated around the center (see arrow in the figure). The substrate installation table 4 may be configured to be able to perform a translation operation along a predetermined direction instead of or in addition to such a rotation operation.

  As shown in FIG. 1, the vapor deposition boat (storage body) 2 is disposed so as to face the substrate installation table 4 or the substrate SK installed thereon. In FIG. 1, a first vapor deposition boat 21 and a second vapor deposition boat 22 are provided as the vapor deposition boat 2 (in the present specification, the symbol “2” represents the first and second vapor deposition boats 21 and 22). Used as a sign to do.)

More specifically, as shown in FIGS. 2 and 3, the vapor deposition boat 2 includes a storage portion 2P and a lid 2F.
As shown in FIG. 3, the storage portion 2P has a substantially rectangular parallelepiped shape, and can store a predetermined substance in a space inside thereof. Here, the predetermined substance is a substance to be evaporated or a raw material of a thin film formed on the substrate SK. More specifically, various metals or alloy materials, ceramic materials, etc. included. Hereinafter, such “substance” is referred to as “evaporation material”.
In the present embodiment, as described above, since the first vapor deposition boat 21 and the second vapor deposition boat 22 are provided as the vapor deposition boat 2, different vapor deposition materials are provided in these vapor deposition boats (21, 22), respectively. It can be stored and used for film formation.

  As shown in FIG. 1, a heating wire 5 is wound around the outer peripheral surface of the storage portion 2P. The heating wire 5 is connected to a heating device 81 inside the vacuum chamber 9. The heating wire 5 generates heat according to the magnitude of the current supplied from the heating device 81. Thereby, heat is given to the vapor deposition material in the storage part 2P, and it melts and evaporates.

  The lid 2F has a substantially rectangular shape in plan view as shown in FIGS. The lid 2F is arranged so that the center portion covers the space of the storage portion 2P, and the both ends of the lid 2F protrude from the both ends of the storage portion 2P when viewed in plan. . Both ends of the lid 2F can be used for installing, for example, an electrode (not shown) for supplying a current to the heating wire 5.

On the other hand, a plurality of holes 2H are formed in the central portion of the lid 2F as shown in FIGS. In the present embodiment, in particular, the formation features or arrangement features of the holes 2H have the following characteristics.
That is, first, as shown in FIG. 2, the central portion has two regions, a first region R1 and a second region R2 (both corresponding to a specific example of the “open region” in the present invention). It is divided into. The overall width of the first and second regions R1 and R2 substantially corresponds to the area when the storage portion 2P is viewed in plan. Further, the boundary line between the first region R1 and the second region R2 is determined so as to bisect the area related to the storage portion 2P. Therefore, the area of the first region R1 itself is substantially equal to the area of the second region R2 itself (note that it is different from the “opening area” described later).
One hole 2H is formed for the first region R1 and ten holes 2H are formed for the second region R2. These holes 2H themselves have the same area. Therefore, if the area of the hole 2H is represented by Sh, the “opening area” regarding the first region R1 is Sh, and the “opening area” regarding the second region R2 is 10 · Sh. As shown in FIG. 2, the hole 2H in the second region R2 is centered on a line of four holes 2H arranged in a straight line, and a line of three holes 2H arranged in a straight line from both sides of the hole 2H. They are arranged in such a manner.
As described above, the lid 2F according to the present embodiment has two regions (R1 and R2) having different opening areas.

  In the present embodiment, the second vapor deposition boat shown in FIG. 1 is provided with the lid 2F having a different number of holes 2H according to the division of the first and second regions R1 and R2 as described above. Only for “22”. With respect to the other first vapor deposition boat 21, for example, referring to FIG. 2, only 10 holes 2H included in the second region R2 have a lid formed in the middle region of the central portion. That is, the first vapor deposition boat 21 has a lid 2F in which ten holes 2H are formed in one region RS, as shown in FIG.

  The above-described vapor deposition boat 2 (in particular, the accommodating portion 2P for accommodating the vapor deposition material) is preferably made of, for example, a high melting point metal such as tungsten, molybdenum, or tantalum.

  As shown in FIG. 1, the shutter 3 is disposed corresponding to the vapor deposition boat 2. In FIG. 1, a first shutter 31 and a second shutter 32 are provided as the shutter 3 (in this specification, the symbol “3” is used as a symbol representing the first and second shutters 31 and 32). To do.) The first shutter 31 corresponds to the first vapor deposition boat 21, and the second shutter 32 corresponds to the second vapor deposition boat 22.

More specifically, the shutter 3 includes a shutter body 3S and a rotating shaft 3A as shown in FIG. 1, FIG. 4, or FIG.
As shown in FIG. 4 or FIG. 5, the shutter body 3S is a plate-like member having a substantially semicircular shape in plan view. The rotation shaft 3A is connected to the center of the diameter portion so as to penetrate the surface of the shutter body 3S. The rotation shaft 3A is connected to a shutter rotation device 82 (see FIG. 1).
The shutter main body 3S can rotate together with the rotation operation around the axis center of the rotation shaft 3A. The rotation shaft 3 </ b> A rotates based on a command from the shutter rotation device 82.

In the present embodiment, there is the following relationship between the rotation operation of the shutter 3 and the first region R1 and the second region R2 described above.
First, the shutter 3 according to the present embodiment has a state in which the right half surface in the drawing is shielded from the substrate SK as shown in FIG. 4, and the left half surface in the drawing as the substrate SK as shown in FIG. Two states or postures are taken, such as a shielding state. When the shutter 3 assumes the former posture, as shown in FIG. 4, the second region R2 is closed with respect to the substrate SK, and the first region R1 is opened. On the other hand, when taking the latter posture, the opposite is true. That is, as shown in FIG. 5, the second region R2 is opened with respect to the substrate SK, and the first region R1 is closed.
And in these cases, of course, in the former case, only one hole 2H is opposed to the substrate SK from the above-described formation mode of the holes 2H included in each of the first region R1 and the second region R2. In this case, a situation is created in which ten holes 2H face the substrate SK.
On the other hand, although not shown, the shutter 3 is in a state or posture that shields the entire region of the first region R1 and the second region R2 from the substrate SK (for example, film formation in which the heating temperature by the heating wire 5 is not sufficient). There is a need to take such an attitude to deal with the preparation stage.)
Eventually, the shutter 3 according to the present embodiment takes three states or postures of FIGS. 4 and 5 and the entire region closed.

  In the present embodiment, the shutter operation corresponding to the division of the first and second regions R1 and R2 as described above is performed only for the second vapor deposition boat “22” shown in FIG. It is. As described above, the other first vapor deposition boat 21 has only “the lid 2F in which ten holes 2H are formed in one region RS”, so the shutter 31 attaches this to the substrate SK. On the other hand, an operation for taking two states or postures of opening or closing is performed (see FIG. 6). In this figure, the shutter main 3S is in a state in which the region RS or ten holes 2H are opened. .

  In addition to the above configuration, the film forming apparatus 1 according to the present embodiment includes a film thickness monitor 7 as shown in FIG. The film thickness monitor 7 may operate based on any principle such as an optical method, a method using a crystal resonator, and the like. The film thickness monitor 7 is connected to the film thickness measuring device 83, and the film thickness measuring device 83 measures the film thickness value measured by the film thickness monitor 7.

In the following, in addition to FIGS. 1 to 6 already referred to, FIG. 7 and FIG. 8 show an example of the action of the film forming apparatus 1 according to the present embodiment described above, that is, a more practical example of the thin film forming operation. Will be described with reference to FIG.
In the example described here, an example will be described in which an MgAg film F1 having a composition ratio of 10: 1 is formed as the first layer on the substrate SK, and an Ag single-layer Ag film F2 is formed as the second layer. (See FIG. 8). In this case, the storage portion 2P of the first vapor deposition boat 21 stores Mg, and that of the second vapor deposition boat 22 stores Ag.
Incidentally, such a thin film is, for example, one (or both) of two electrodes sandwiching a light-emitting functional layer containing an organic EL substance that constitutes an organic EL element (light-emitting element). It can be suitably used as another component constituting the organic EL device (this point will be described later again).

First, as shown in FIG. 7, vapor deposition using both the first vapor deposition boat 21 and the second vapor deposition boat 22 is performed as a first stage process.
That is, in this case, the shutter 31 opens the first vapor deposition boat 21 with respect to the substrate SK, and the shutter 32 also opens the second vapor deposition boat 22 with respect to the substrate SK. Here, “open” means that the above-described hole 2H directly faces the substrate SK. In the latter case, “the shutter 32 opens the second vapor deposition boat 22”, in the first step, the first region R 1 of the second vapor deposition boat 22 is opened and the second region R 2 is closed. This means that (see FIG. 4). Therefore, regarding the second vapor deposition boat 22, only one hole 2H is opposed to the substrate SK.
As described above, the first vapor deposition boat 21 has the lid 2F in which ten holes 2H are formed in one region RS, and the shutter 31 only performs an operation of opening or closing the lid. Therefore, the meaning of “the shutter 31 opens the first vapor deposition boat 21” described above is naturally determined (that is, the shutter 31 takes the state shown in FIG. 6).
Further, in the stage of film formation preparation in which the heating temperature by the heating wire 5 is not sufficient, the shutter 3 takes a posture of closing all the holes 2H of the vapor deposition boat 2 as described above. This is not related to the difference between the first vapor deposition boat 21 and the second vapor deposition boat 22. This also applies to the second stage process described later.

In the situation as described above, when the storage portions 2P of both the first vapor deposition boat 21 and the second vapor deposition boat 22 are heated by the heating device 81 and the heating wire 5, the vapor deposition material stored in the space inside thereof is obtained. Melts and evaporates. Then, the evaporated evaporation material is deposited on the substrate SK to form the MgAg film F1 as shown in FIG. This film formation is continued by the film thickness monitor 7 until a predetermined film thickness is reached.
At this time, the amount of vapor deposition in the first vapor deposition boat 21 is larger than that of the second vapor deposition boat 22 as visually represented by the thickness of the dashed arrow in FIG. This is because, as described above, the former has 10 holes 2H facing the substrate SK, whereas the latter has only one hole 2H facing the substrate SK. As a result, the MgAg film F1 is a thin film having a composition ratio of Mg and Ag of 10: 1.

Subsequently, as shown in FIG. 8, vapor deposition using only the second vapor deposition boat 22 is performed as a second step.
That is, in this case, the shutter 31 closes the first vapor deposition boat 21 with respect to the substrate SK, while the shutter 32 opens the second vapor deposition boat 22 with respect to the substrate SK. Here, “open” means that the second region R2 of the second vapor deposition boat 22 is opened and the first region R1 is closed (see FIG. 5). Therefore, with respect to the second vapor deposition boat 22, the ten holes 2H face the substrate SK.
Note that the significance of “the shutter 31 closing the first vapor deposition boat 21” as described above is naturally determined (ie, the shutter 31 is 180 from the state shown in FIG. 6). It takes a state rotated by degrees.)

In such a situation, when the storage part 2P of the second vapor deposition boat 22 is heated by the heating device 81 and the heating wire 5, the vapor deposition material stored in the space inside thereof is melted and evaporated. The evaporated vapor deposition material is deposited on the MgAg film F1, and forms an Ag film F2 as shown in FIG. This film formation is also continued by the film thickness monitor 7 until a predetermined film thickness is reached.
At this time, as can be seen from the comparison between FIG. 8 and FIG. 7, the amount of vapor deposition from the second vapor deposition boat 22 is larger in the case of FIG. 8 than in the case of FIG. 7. This is because, as described above, the former has 10 holes 2H formed in the second region R2 facing the substrate SK, whereas the latter has only one hole formed in the first region R1. This is because 2H faces the substrate SK. As a result, the Ag film F2 is formed more rapidly than in the case of FIG. In other words, in FIG. 8, the film forming speed is increased as compared with FIG.

The following effects are produced by the configuration and operation of the film forming apparatus 1 as described above.
(1) First, according to the film forming apparatus 1 according to the present embodiment, as shown in the transition from FIG. 7 to FIG. 8 described above, the film forming speed relating to the second vapor deposition boat 22 can be easily and reliably adjusted.・ It is done inexpensively. This is because the adjustment is based only on the rotation operation of the shutter 32.
In addition, in this embodiment, the shutter 32 is only required to have the two states or postures described with reference to FIG. 4 and FIG. In addition, the reliability of the operation of the film forming apparatus 1 is further increased (in addition, naturally, the ease, certainty, and low cost related to the above-described adjustment of the film forming speed are further improved). In general, in consideration of the fact that the operation of the shutter in the film forming apparatus is performed in a vacuum, and that the operation is preferably as simple as possible, this embodiment is also suitable in that sense. It can be said that it provides.

  For the same reason, in the present embodiment, the adjusted film formation rate can be maintained at a constant value almost always during film formation. In order to adjust the film formation rate, there is a method of realizing this through adjustment of the heating temperature of the vapor deposition material, for example, but other methods including such a method generally have many instability factors, and therefore adjustment of the film formation rate is possible. In addition, there may be a case where it is impossible to completely maintain the constant speed after the adjustment, but in this embodiment, the film formation speed is adjusted only by the opening / closing operation of the shutter 3. Therefore, there is very little room for such concerns.

(2) Further, according to the film forming apparatus 1 according to the present embodiment, as is apparent from the description of FIGS. 7 and 8, an alloy or a compound in which a plurality of vapor deposition materials are mixed at a predetermined composition ratio. A thin film is suitably formed.
In addition, in the present embodiment, since the film formation speed is adjusted as described in (1) above for the second vapor deposition boat 22, the following effects are also achieved.
That is, assuming that the second vapor deposition boat 22 does not have a plurality of opening regions such as the first region R1 and the second region R2 described in the above embodiment, This means that there is only a single opening region, such as the region RS (see FIG. 6) in the vapor deposition boat 21. However, the number of holes 2H in the opening region in this case is greatly restricted by how the composition ratio of the MgAg film F1 is made. In the present embodiment, the number of the holes 2H in the first vapor deposition boat 21 is 10 (see FIG. 6), but the number of the holes 2H in the first region R1 on the second vapor deposition boat 22 is one. This is one manifestation of such restrictions (in other words, the number of holes 2H in the first and second vapor deposition boats 21 and 22 according to this embodiment depends on the composition ratio of the thin film to be formed). It can be said that it is established.) However, if the second stage process described above is executed in such a state, it becomes extremely inefficient. This is because the Ag film F2 must be formed with only one hole 2H until a predetermined film thickness is obtained.
In the present embodiment, such a problem does not occur. This is because, as described above, the second vapor deposition boat 22 has the first region R1 and the second region R2 as shown in FIG. 2, and switching between them is performed by the rotation operation of the shutter 31. It is because it has become. As a result, the Ag film F2 made of only Ag is quickly formed by vapor deposition using as many as 10 holes 2H.

(3) The multilayer thin film in which the Ag film F2 is present on the MgAg film F1 is preferably used as an electrode constituting the organic EL element as described above. In the present embodiment, the following effects are also obtained from the relationship between the two matters of the relative increase in the film formation rate during the formation of the Ag film F2 described in (1) and (2). The

First, the multilayer thin film as shown in FIG. 8 is suitable as the electrode because of the following circumstances.
As shown in FIG. 9, the organic EL element (light emitting element) 8 constituting the organic EL device includes an issue function layer 18 and two electrode layers 13 and 50 sandwiching this layer from both sides. Each of the two electrode layers 13 and 50 serves as a supply source of holes and electrons. In the light emitting functional layer 18, excitons are generated by recombination of the holes and electrons, and a light emission phenomenon occurs when the excitons transition to the ground state. On the other hand, the light L emitted from the light emitting functional layer 18 may be amplified by an optical resonator structure that also includes the light emitting functional layer 18. In FIG. 9, as apparent from the reflection state of the light L depicted therein, one of the two electrode layers 13 and 50, and the reflection layer 12, each have two It is shown that an optical resonator is formed as if it constitutes a reflecting mirror (in FIG. 9, it is appropriate between the reflecting layer 12 and the electrode layer 13 or between the reflecting layer 12 and the substrate SK. An interlayer insulating film or the like made of any material is formed.)
In view of such a background, for example, “suitable” as the electrode layer 50 is specifically a material that easily supplies electrons (that is, a work function is not large), and When the electrode layer 50 also serves as one of the reflectors of the optical resonator structure as shown in FIG. 9, the light reflectance is high, and further, in order to fully exhibit the original function as an “electrode” It can be considered that various requirements such as a low electrical resistance value are satisfied.

The multilayer thin film composed of the MgAg film F1 and the Ag film F2 shown in FIG. 8 responds well to various requests as described above. In particular, when the multilayer thin film is applied to the electrode layer 50 on the emission side of the light L (that is, the side from which the light L emitted from the light emitting functional layer 18 is extracted to the outside) (see FIG. 9), the MgAg film F1 needs to be formed very thin (for example, 20 nm or less) in order to allow light transmission, and therefore its electrical resistance value may become very large, but the presence of the Ag film F2 Suppresses such an increase in electrical resistance. The multilayer thin film composed of the MgAg film F1 and the Ag film F2 is also preferably used as the electrode layer 50 in this sense.
Due to the circumstances as described above, the multilayer thin film shown in FIG. 8 can be suitably used as the electrode layer 50 (or the electrode layer 13 in some cases) constituting the organic EL element 8.

And such a thing and the relative increase of the film-forming speed | rate at the time of film-forming Ag film F2 in the above-mentioned (1) and (2) have the following suitable correlations.
FIG. 10 is a graph showing the relationship between the deposition rate of the Ag film F2 and the sheet resistance values of the Ag film F2 and the MgAg film F1 as a whole. As shown in this figure, the larger the film formation rate, the smaller the sheet resistance value. That is, the switching of the film formation rate from the above-described FIG. 7 to FIG. 8 is extremely significant in order to obtain the effect of further reducing the electric resistance value of the electrode layer 50.
In addition, when the deposition rate increases, the flatness of the Ag film F1 is improved. This is considered to be because when the film formation rate is high, the scattered vapor deposition material is deposited on the surface of the MgAg film F1 without sufficiently progressing the growth of nuclei as the starting point of crystal growth ( If the deposition rate is low, the growth of the nuclei will proceed to a considerable extent, so that the vapor deposition material will be deposited on relatively large nuclei present in such places, resulting in a flat surface. Sex goes down.) From this, switching of the film formation speed from FIG. 7 to FIG. 8 has the meaning that the flatness of the electrode layer 50 is improved and, on the other hand, the light reflectance is increased. As a result, the effect that the functions of the optical resonator described above are fully exhibited can also be obtained.

(4) Finally, according to the film forming apparatus 1 according to the present embodiment, the following effects can be obtained with respect to the holes 2H formed in each of the first region R1 and the second region R2.
First, in general, in the Knudsen type evaporation source as shown in FIG. 2, if the area of the hole 2H is sufficiently smaller than the area of the evaporation surface related to the vapor deposition material in the space of the storage part 2P, the hole It is known that the number of evaporated molecules per unit time ejected from 2H is proportional to the area of the hole 2H. Here, the opening area of each of the first region R1 and the second region R2 is proportional to the number of the holes 2H, as is apparent from the description of FIG. Then, the number of evaporated molecules per unit time is also proportional to the number of holes 2H. That is, in the present embodiment, the amount of the vapor deposition material that should reach the substrate SK can be easily adjusted only by paying attention to the “number” of the holes 2H.
Thus, according to the present embodiment, it can be said that a very advantageous structure is adopted from the viewpoint of adjusting the film forming speed.

Although the embodiments according to the present invention have been described above, the film forming apparatus according to the present invention is not limited to the above-described embodiments, and various modifications can be made.
(1) In the above embodiment, one vapor deposition boat 2 includes a first shutter 31 for the first vapor deposition boat 21 and a second shutter 32 for the second vapor deposition boat 22. In contrast, one shutter 3 is provided so as to correspond thereto, but the present invention is not limited to such a form.
For example, as shown in FIGS. 11 to 14, two shutters 33 and 34 may be provided for one vapor deposition boat 2. In these drawings, each of the shutters 33 and 34 includes the shutter main bodies 33S and 34S and the rotation shafts 33A and 34A, as in the above-described embodiment. In particular, the shutter 34 is not substantially changed from the shutter 3 in the above embodiment.
However, as for the shutter 33, for example, as shown in FIG. 12, the shutter main body 33S is a plate-like member having a quadrant (or fan shape) in plan view. The rotating shaft 33A penetrates through the position of the fan of the shutter body 33S. Further, as shown in FIG. 11 and the like, the shutter 33 and the remaining shutter 34 are erected so as to correspond to both side surfaces of the vapor deposition boat 2, and the shutter bodies 33S and 34S are respectively provided. As shown in FIG. 11, they are arranged in a different manner along the vertical direction in the drawing. Accordingly, for example, in FIG. 12, the shutter main body 33S covers the vapor deposition boat 2 from the upper side in the figure, and the shutter main body 34S covers from the lower side.

According to such a form, the following effects are exhibited.
In other words, according to this mode, the shutter 33 can be used exclusively for opening and closing the first region R1 and the second region R2, and the shutter 34 (all region closing action shutter) can be used for these two regions R1 and R2. It can be used exclusively for opening and closing all of R2. Thereby, the number of possible postures of the shutter 33 and the shutter 34 can be reduced.
For example, as shown in FIGS. 13 and 14, in order for the shutter 33 to change from a state in which the first region R1 is opened with respect to the substrate SK and the second region R2 is closed to the opposite state, the shutter 33 is used. The main body 33S may be rotated by 90 degrees about the rotation shaft 33A (from FIG. 13 to FIG. 14). The same applies to a transition in the opposite direction to that just described (from FIG. 14 to FIG. 13). The shutter 33 only takes these two states or postures.
On the other hand, as shown in FIG. 12, the shutter 34 rotates 180 degrees around the rotation axis 34A, thereby closing all the regions of the first region R1 and the second region R2 with respect to the substrate SK ( Open (see FIG. 13 or FIG. 14). The shutter 34 only takes these two states or postures.

  With respect to these points, the shutter 3 in the above-described embodiment has only to take the two postures shown in FIGS. 4 and 5 as far as the film formation speed is adjusted. Compared to having to take a posture to close the entire region R1 and the second region R2 (after all, it was necessary to take three postures for convenience), the operation of the shutters 33 and 34 Such simplification can be said to be more thorough.

  As described above, in the form shown in FIGS. 11 to 14, both the shutters 33 and 34 need only perform an extremely simple operation, and thus the reliability of the operation of the film forming apparatus is further increased. Since advanced control and the like related to the shutter operation are not necessary as compared with the above-described embodiment, cost reduction of the film forming apparatus can be achieved.

  In addition, in order to enjoy the above effects, aspects other than the said aspect are also considered. For example, similarly to FIG. 11 to FIG. 14, two shutters corresponding to both side surfaces of the vapor deposition boat 2 are provided, and each of them is used exclusively for opening and closing the first region R1 and the second region R2. This aspect is also within the scope of the present invention. Even in this case, one shutter has only two states of opening or closing the first region R1, and the other shutter has only two states of opening or closing the second region R2. is there. In this case, in order to close all of the first and second regions R1 and R2, both shutters may be closed. In order to enjoy the effect of this “total closure”, when the two shutters are both in a closed state, the shutter bodies are arranged such that, when viewed in plan, the shutter bodies overlap each other. It is even better if the shape is defined (for example, a fan shape having an obtuse central angle may be considered).

(2) Although the said embodiment demonstrated the aspect provided with two of the 1st and 2nd vapor deposition boats 21 and 22 as the vapor deposition boat 2, this invention is not limited to this form.
For example, as shown in FIG. 15, three vapor deposition boats 2 may be provided, or four or more or only one may be provided although not shown. Incidentally, FIG. 15 shows an example in which the thin film F20 of the second layer is formed by the vapor deposition material accommodated in the second vapor deposition boat 22 and the third vapor deposition boat 23. In the above embodiment, the MgAg film F1 is a thin film made of an alloy or a compound, and the second thin film F20 can be manufactured as a thin film made of an alloy or a compound.
As described above, when there are a plurality of vapor deposition boats 2, the vapor deposition boat 2 having the lid 2 </ b> F having the “plurality of opening areas” illustrated in FIG. 2 and the like is at least one of the plurality of vapor deposition boats 2. It only has to be provided. In such a case, it goes without saying that the number of holes 2H (that is, the opening area) to be provided in each vapor deposition boat 2 may be appropriately determined according to what composition ratio the thin film is to be manufactured. Nor. For example, the first layer is formed by vapor deposition materials X and Y, the composition ratio is defined as α: β (α> β), the second layer is formed by vapor deposition materials Y and Z, and the composition ratio is γ. : Δ (γ> δ), when forming the first layer, the hole 2H based on the same concept as the above embodiment is formed for each of the first vapor deposition boat 21 and the second vapor deposition boat 22. The number of the holes 2H in the latter first region R1 is smaller than the number of the former holes 2H, regardless of the specific number. A smaller number of holes 2H may be formed in the third vapor deposition boat 23 than the number of holes 2H in the region R2.

(3) In the above embodiment, a description is given of the lid 2F in which one hole 2H is provided for the first region R1 and ten holes 2H are provided for the second region R2. However, it goes without saying that the present invention is not limited to such a configuration. In addition, the present invention is not limited to the above-described embodiment with respect to the arrangement of the holes 2H formed in one opening region.
For example, a lid 2F having an arrangement as shown in FIGS. 16 and 17 is also within the scope of the present invention. In FIG. 16, the eight holes 2H are arranged in an annular shape so as to go around the periphery except for the central portion. In FIG. 17, the five holes 2H are arranged in the central portion, contrary to FIG. They are arranged as if they aggregate.
Such a difference in arrangement may cause the distribution of the amount of the vapor deposition material reaching the surface of the substrate SK to be different. Therefore, if an appropriate arrangement mode or the like is selected, it is possible to manufacture a thin film having a more uniform film thickness over the entire surface of the substrate SK.
In addition, in order to enjoy such an effect more reliably, the presence of the thin film monitor 7 described above, the rotation operation of the substrate installation table 4, or the possibility of the translation operation may contribute.

1 is a schematic view showing a film forming apparatus according to an embodiment of the present invention. It is a top view of the vapor deposition boat (22) which comprises the film-forming apparatus of FIG. It is a side view of the vapor deposition boat (22) of FIG. It is a top view of the shutter (32) corresponding to the vapor deposition boat (22) of FIG. It is a top view which shows the case where the shutter (32) of FIG. 4 takes the state different from the figure. It is a top view of the vapor deposition boat (21) which comprises the film-forming apparatus of FIG. 1, and the shutter (31) corresponding to it. It is a figure which shows the film-forming process (1st step; film-forming process of MgAg film | membrane F1) using the film-forming apparatus of FIG. It is a figure which shows the film-forming process (2nd step; film-forming process of Ag film | membrane F2) using the film-forming apparatus of FIG. It is a schematic sectional drawing which shows the structure of an organic EL element provided with MgAg film | membrane (F1) and Ag film | membrane (F2) which are shown by FIG. 8 as one electrode (50). It is a graph showing the relationship between the film-forming speed | rate of Ag film | membrane (F2) in FIG. 8, and the sheet resistance value of the Ag film | membrane (F2) and the MgAg film | membrane (F1) whole. It is a side view of the shutter (33, 34) which comprises the film-forming apparatus which concerns on another embodiment of this invention. It is a top view of the shutter (33, 34) of FIG. It is a top view for demonstrating operation | movement of a shutter (33) especially among the shutters (33, 34) of FIG. It is a top view which shows the case where the shutter (33) of FIG. 13 takes the state different from the figure. It is a side view of the vapor deposition boat (21, 22, 23) which comprises the film-forming apparatus which concerns on another embodiment of this invention. It is a partial top view of the vapor deposition boat which has the arrangement | sequence aspect of a hole (2H) different from what is shown in FIG.2 and FIG.6. FIG. 17 is a partial plan view of a vapor deposition boat having a hole (2H) arrangement different from those shown in FIGS. 2, 6, and 16.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Film-forming apparatus, 2 ... Deposition boat (deposition source), 2P ... Storage part, 2F ... Cover, 2H ... Hole, 21, 22, 23 ... First, second, and third deposition boat , R1... First region, R2... Second region, 3... Shutter, 3A... Rotating shaft, 3S... Shutter body, 31, 32 ... First and second shutters, 33, 34. 4 ... Substrate installation table, 5 ... Heating wire, 7 ... Film thickness monitor, 9 ... Vacuum chamber, 91 ... Exhaust port, 81 ... Heating device, 82 ... Shutter rotating device, SK ... Substrate , F1... MgAg film, F2... Ag film, 8... Organic EL element, 13, 50... Electrode layer, 18.

Claims (10)

A board mounting base for installing the board;
A container having a space capable of storing a substance to be deposited on the substrate;
Heating means for applying heat for melting and evaporating the substance;
A cover having a plurality of open areas arranged to cover the space and having different open areas;
A shutter that closes another opening region when opening one opening region of the plurality of opening regions with respect to the substrate;
A film forming apparatus comprising: There are a plurality of the storage bodies, and
Each of the plurality of storage bodies stores different substances in the space as the substances,
The cover and the shutter are
Provided corresponding to at least one of the plurality of storage bodies,
The film forming apparatus according to claim 1. Each of the plurality of open regions includes one or more holes,
The film forming apparatus according to claim 1, wherein: The holes all have the same area,
The opening area corresponding to each of the plurality of opening regions is:
Depending on the number of holes, they are different from each other,
The film forming apparatus according to claim 3. Each of the opening areas corresponding to each of the plurality of opening regions is:
It is determined according to the composition ratio of the thin film by the substance to be formed on the substrate,
The film forming apparatus according to claim 1, wherein the film forming apparatus is a film forming apparatus. Apart from the shutter,
A shutter for closing the entire region for closing all of the plurality of opening regions with respect to the substrate;
The film forming apparatus according to claim 1, wherein the film forming apparatus is a film forming apparatus. A storage body having a space capable of storing a substance to be deposited on the substrate, and a cover having N open areas (N is a positive integer) arranged to cover the space and having different opening areas; A film forming method using
A first shutter operation step in which a shutter opens a p-th opening area (p is a positive integer equal to or less than N) of the N opening areas and closes the other opening areas;
A first film forming step of applying heat to the substance in order to melt and evaporate the substance;
The shutter opens with respect to the q-th opening area (p is a positive integer less than N and q ≠ p) among the N opening areas, and the second shutter closes the other opening areas. Operation process;
A second film forming step of applying heat to the substance in order to melt and evaporate the substance;
A film forming method comprising: Along with at least one of the first and second film forming steps,
In addition, the method further includes a parallel film forming step of applying heat to the substance in order to melt and evaporate the substance stored in a container different from the container.
The film forming method according to claim 7. A shutter for closing the whole area different from the shutter further includes the step of closing all of the N opening areas with respect to the substrate;
The film forming method according to claim 7 or 8, wherein A method of manufacturing a light-emitting device including a light-emitting element including first and second electrode layers constructed on a substrate and a light-emitting functional layer sandwiched between the first and second electrode layers,
At least one of the first and second electrode layers is
Manufactured by the film forming method according to any one of claims 7 to 9,
A method for manufacturing a light-emitting device.

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