JP2009280442A - 超伝導膜構造及びその作製方法 - Google Patents
超伝導膜構造及びその作製方法 Download PDFInfo
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
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Abstract
【解決手段】超伝導膜構造は、基板上に複数の単層カーボンナノチューブからなるカーボンナノチューブ膜が形成されてなる超伝導膜構造であって、前記単層カーボンナノチューブが、前記単層カーボンナノチューブを構成する炭素原子の一部がホウ素原子で置換されたホウ素置換型単層カーボンナノチューブである。
【選択図】図1
Description
(実験例1)
本実施例では、塗布液に含有させるホウ素置換型単層カーボンナノチューブが、ホウ素置換型であるかどうかを調べた。初めに、以下の手順でホウ素置換型単層カーボンナノチューブを作製した。カーボンナノチューブ成長用触媒としての鉄及びコバルトにホウ素を所定量((1)0原子%、(2)1.5原子%、(3)2.0原子%、(4)3.0原子%、(5)4.5原子%)含有せしめ、このカーボンナノチューブ成長用触媒に対して電気炉内でレーザーを照射させた後に200℃で加熱して、ホウ素置換型単層カーボンナノチューブを得た。
2 カーボンナノチューブ膜
3 ホウ素置換型単層カーボンナノチューブ
S 基板
Claims (8)
- 基板上に複数の単層カーボンナノチューブからなるカーボンナノチューブ膜が形成されてなる超伝導膜構造であって、前記単層カーボンナノチューブが、前記単層カーボンナノチューブを構成する炭素原子の一部がホウ素原子で置換されたホウ素置換型単層カーボンナノチューブであることを特徴とする超伝導膜構造。
- 前記カーボンナノチューブ膜の厚さが、略均一であることを特徴とする請求項1記載の超伝導膜構造。
- 前記ホウ素置換型単層カーボンナノチューブ中の前記ホウ素原子の置換率は、炭素原子100に対して、0より多く、かつ4以下であることを特徴とする請求項1又は2記載の超伝導膜構造。
- 前記超伝導膜構造の超伝導転移温度が12K以下であることを特徴とする請求項1〜3のいずれか1項に記載の超伝導膜構造。
- 基板上に、単層カーボンナノチューブを構成する炭素原子の一部がホウ素原子で置換されたホウ素置換型単層カーボンナノチューブを含む塗布液をスピンコート法により塗布し、カーボンナノチューブ膜を作製する超伝導膜構造の作製方法であって、
スピンコート時に、回転数を300〜700rpmとすることを特徴とする超伝導膜構造の作製方法。 - 前記カーボンナノチューブ膜形成後、基板を1000℃以上で加熱することを特徴とする請求項5記載の超伝導膜構造の作製方法。
- 前記ホウ素置換型単層カーボンナノチューブを、カーボンナノチューブ成長用触媒にホウ素を所定量含有せしめ、このカーボンナノチューブ成長用触媒に対して電気炉内でレーザーを照射させた後に150〜250℃で加熱して得たことを特徴とする請求項5に記載の超伝導膜構造の作製方法。
- 前記所定量が、カーボンナノチューブ成長用触媒に対して0より多く、4原子%以下であることを特徴とする請求項7に記載の超伝導膜構造の作製方法。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005096024A (ja) * | 2003-09-24 | 2005-04-14 | Fuji Xerox Co Ltd | ワイヤとその製造方法および該ワイヤを用いた電磁石 |
WO2007036641A1 (fr) * | 2005-09-29 | 2007-04-05 | Universite Paul Sabatier | Solution dispersee de materiaux carbones pour la fabrication de collecteurs de courant |
WO2007057501A1 (en) * | 2005-11-16 | 2007-05-24 | Canatu Oy | Carbon nanotubes functionalized with fullerenes |
WO2007130869A2 (en) * | 2006-05-01 | 2007-11-15 | Yazaki Corporation | Organized carbon and non-carbon assembly and methods of making |
WO2008140649A2 (en) * | 2007-03-07 | 2008-11-20 | Carbolex, Inc. | Boron-doped single-walled nanotubes (swcnt) |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005096024A (ja) * | 2003-09-24 | 2005-04-14 | Fuji Xerox Co Ltd | ワイヤとその製造方法および該ワイヤを用いた電磁石 |
WO2007036641A1 (fr) * | 2005-09-29 | 2007-04-05 | Universite Paul Sabatier | Solution dispersee de materiaux carbones pour la fabrication de collecteurs de courant |
WO2007057501A1 (en) * | 2005-11-16 | 2007-05-24 | Canatu Oy | Carbon nanotubes functionalized with fullerenes |
WO2007130869A2 (en) * | 2006-05-01 | 2007-11-15 | Yazaki Corporation | Organized carbon and non-carbon assembly and methods of making |
WO2008140649A2 (en) * | 2007-03-07 | 2008-11-20 | Carbolex, Inc. | Boron-doped single-walled nanotubes (swcnt) |
Non-Patent Citations (1)
Title |
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JPN6012038503; KORETSUNE,T. et al: 'Electronic structure of boron-doped carbon nanotubes' Phys Rev B Condens Matter Mater Phys Vol.77, No.16, 20080415, p.165417.1-165417.5 * |
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