JP2009267329A - 接着フィルム、接着シート、半導体装置及び半導体装置の製造方法 - Google Patents
接着フィルム、接着シート、半導体装置及び半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2009267329A JP2009267329A JP2008223867A JP2008223867A JP2009267329A JP 2009267329 A JP2009267329 A JP 2009267329A JP 2008223867 A JP2008223867 A JP 2008223867A JP 2008223867 A JP2008223867 A JP 2008223867A JP 2009267329 A JP2009267329 A JP 2009267329A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive film
- adhesive
- film
- bis
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Adhesive Tapes (AREA)
- Die Bonding (AREA)
- Dicing (AREA)
Abstract
【解決手段】接着フィルム1は高タック面Aと低タック面Bとを有する。高タック面Aの40℃におけるタック強度をFA、低タック面Bの40℃におけるタック強度をFBとした場合、FA−FB≧10gf及びFA≧10gfの関係を満たす。高タック面Aは第1接着剤樹脂組成物を含み、低タック面Bは第1接着剤樹脂組成物とは異なる第2接着剤樹脂組成物を含む。
【選択図】図1
Description
<接着フィルム>
FA−FB≧10gf
FA≧10gf
(式中、Q4及びQ9は各々独立に炭素数1〜5のアルキレン基又は置換基を有してもよいフェニレン基を示し、Q5、Q6、Q7、及びQ8は各々独立に炭素数1〜5のアルキル基、フェニル基又はフェノキシ基を示し、pは1〜5の整数を示す)
最大応力(Pa)=最大荷重(N)/試料の断面積(m2)
最大荷重伸度(%)=[(最大荷重におけるチャック間長さ(mm)−30)/30]×100
引張破断伸度(%)=[(破断時のチャック間長さ(mm)−30)/30]×100
<接着シート>
<半導体装置>
(貼り合わせ工程)
(ダイシング工程)
(ピックアップ工程)
(ダイボンディング工程)
(ワイヤボンディング工程)
(封止工程)
(実施例)
(ワニス1)
(ワニス2)
(ワニス3)
(酸無水物)
ODPA:4,4’−オキシジフタル酸二無水物(マナック社製)
DBTA:1,10−(デカメチレン)ビス(トリメリテート二無水物)(黒金化成製)
BPADA:2,2−ビス[4−(3,4−ジカルボキシフェノキシ)フェニル]プロパン二無水物(黒金化成製)
(ジアミン)
LP7100:1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン(信越化学社製)
B12:4,9−ジオキサデカン−1,12−ジアミン(BASF社製)
D2000:ポリオキシプロピレンジアミン2000(BASF社製)
BAPP:2,2ビス−(4−(4−アミノフェノキシ)フェニル)プロパン(和歌山精化工業社製)
(実施例1)
(実施例2)
(比較例1)
(比較例2)
(比較例3)
(破断伸び)
(タック強度)
(ラミネート性)
(ピックアップ性)
Claims (14)
- 一方の面と他方の面とを有する接着フィルムであって、
前記一方の面の40℃におけるタック強度をFA、前記他方の面の40℃におけるタック強度をFBとした場合、FA−FB≧10gf及びFA≧10gfの関係を満たし、
前記一方の面は第1接着剤樹脂組成物を含み、前記他方の面は前記第1接着剤樹脂組成物とは異なる第2接着剤樹脂組成物を含む、接着フィルム。 - 前記タック強度は、直径5.1mmのSUS304からなる面に対するタック強度である、請求項1に記載の接着フィルム。
- FB≦10gfの関係を満たす、請求項1又は2に記載の接着フィルム。
- FA/FB≧5の関係を満たす、請求項1〜3のいずれか一項に記載の接着フィルム。
- 前記第1接着剤樹脂組成物を含む第1ワニスと前記第2接着剤樹脂組成物を含む第2ワニスとを基材上に重ねて塗布した後、乾燥することによって前記基材上に形成される、請求項1〜4のいずれか一項に記載の接着フィルム。
- 厚みが200μm以下である、請求項1〜5のいずれか一項に記載の接着フィルム。
- 破断伸びが200%以下である、請求項1〜6のいずれか一項に記載の接着フィルム。
- ポリイミド及びエポキシ樹脂を含有する、請求項1〜7のいずれか一項に記載の接着フィルム。
- ダイシングシートと、前記ダイシングシートに積層された請求項1〜8のいずれか一項に記載の接着フィルムと、を備える、接着シート。
- 前記ダイシングシートが、基材フィルムと、前記基材フィルム上に設けられた粘着剤層と、を有する、請求項9に記載の接着シート。
- 前記接着フィルムの前記他方の面と前記粘着剤層とが貼り合わされている、請求項10に記載の接着シート。
- 前記接着フィルムの前記一方の面は、半導体ウェハに貼り合わされる、請求項9〜11のいずれか一項に記載の接着シート。
- 半導体素子と、
前記半導体素子に接続される被着体と、
請求項1〜8のいずれか一項に記載の接着フィルムの硬化物からなり、前記半導体素子と前記被着体との間に配置され、前記半導体素子と前記被着体とを接続する接続層と、
を備える、半導体装置。 - 請求項1〜8のいずれか一項に記載の接着フィルムの前記一方の面を半導体ウェハに貼り合わせる工程と、
前記半導体ウェハを切断する工程と、
を含む、半導体装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008223867A JP5374971B2 (ja) | 2008-04-04 | 2008-09-01 | 接着フィルム、接着シート、半導体装置及び半導体装置の製造方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008098154 | 2008-04-04 | ||
JP2008098154 | 2008-04-04 | ||
JP2008223867A JP5374971B2 (ja) | 2008-04-04 | 2008-09-01 | 接着フィルム、接着シート、半導体装置及び半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009267329A true JP2009267329A (ja) | 2009-11-12 |
JP5374971B2 JP5374971B2 (ja) | 2013-12-25 |
Family
ID=41392755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008223867A Expired - Fee Related JP5374971B2 (ja) | 2008-04-04 | 2008-09-01 | 接着フィルム、接着シート、半導体装置及び半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5374971B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150051315A1 (en) * | 2012-02-17 | 2015-02-19 | Huntsman Advanced Materials Americas Llc | Mixture of Benzoxazine, Epoxy and Anhydride |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06172716A (ja) * | 1992-12-04 | 1994-06-21 | Ube Ind Ltd | 耐熱性接着剤組成物 |
JP2004165687A (ja) * | 2003-12-22 | 2004-06-10 | Hitachi Chem Co Ltd | 半導体装置および半導体装置の製造方法ならびに半導体チップ搭載用の感光性接着フィルム |
JP2004247657A (ja) * | 2003-02-17 | 2004-09-02 | Hitachi Chem Co Ltd | 接着シート及びそれを用いた半導体装置 |
JP2004266137A (ja) * | 2003-03-03 | 2004-09-24 | Hitachi Chem Co Ltd | 半導体装置用ダイボンディング材及びこれを用いた半導体装置 |
JP2005260204A (ja) * | 2004-02-10 | 2005-09-22 | Lintec Corp | 半導体装置の製造方法 |
JP2007270125A (ja) * | 2006-03-08 | 2007-10-18 | Hitachi Chem Co Ltd | 接着シート、一体型シート、半導体装置、及び半導体装置の製造方法 |
JP2008056820A (ja) * | 2006-08-31 | 2008-03-13 | Toagosei Co Ltd | ハロゲンフリー難燃性接着剤組成物 |
-
2008
- 2008-09-01 JP JP2008223867A patent/JP5374971B2/ja not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06172716A (ja) * | 1992-12-04 | 1994-06-21 | Ube Ind Ltd | 耐熱性接着剤組成物 |
JP2004247657A (ja) * | 2003-02-17 | 2004-09-02 | Hitachi Chem Co Ltd | 接着シート及びそれを用いた半導体装置 |
JP2004266137A (ja) * | 2003-03-03 | 2004-09-24 | Hitachi Chem Co Ltd | 半導体装置用ダイボンディング材及びこれを用いた半導体装置 |
JP2004165687A (ja) * | 2003-12-22 | 2004-06-10 | Hitachi Chem Co Ltd | 半導体装置および半導体装置の製造方法ならびに半導体チップ搭載用の感光性接着フィルム |
JP2005260204A (ja) * | 2004-02-10 | 2005-09-22 | Lintec Corp | 半導体装置の製造方法 |
JP2007270125A (ja) * | 2006-03-08 | 2007-10-18 | Hitachi Chem Co Ltd | 接着シート、一体型シート、半導体装置、及び半導体装置の製造方法 |
JP2008056820A (ja) * | 2006-08-31 | 2008-03-13 | Toagosei Co Ltd | ハロゲンフリー難燃性接着剤組成物 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150051315A1 (en) * | 2012-02-17 | 2015-02-19 | Huntsman Advanced Materials Americas Llc | Mixture of Benzoxazine, Epoxy and Anhydride |
TWI641648B (zh) * | 2012-02-17 | 2018-11-21 | 美商漢士門先進材料美國責任有限公司 | 苯并、環氧化合物及酸酐之混合物 |
Also Published As
Publication number | Publication date |
---|---|
JP5374971B2 (ja) | 2013-12-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5110066B2 (ja) | フィルム状接着剤の調製方法 | |
JP5445455B2 (ja) | 接着剤組成物、フィルム状接着剤、接着シート及び半導体装置 | |
JP4952585B2 (ja) | 接着剤組成物、フィルム状接着剤、接着シート、並びにそれを用いた半導体装置 | |
JP5343450B2 (ja) | 半導体素子固定用接着フィルム及び接着シート | |
JP5664455B2 (ja) | 接着剤組成物、接着シート及び半導体装置 | |
JP5803123B2 (ja) | 半導体用粘接着シート、それを用いた半導体ウエハ、半導体装置及び半導体装置の製造方法 | |
JP2009084563A (ja) | 接着剤組成物、フィルム状接着剤、接着シート及び半導体装置 | |
JP5439841B2 (ja) | 接着剤組成物、接着シート及び半導体装置 | |
JP2006144022A (ja) | フィルム状接着剤、接着シート及び半導体装置 | |
JP5439842B2 (ja) | 接着シート及び半導体装置 | |
JP5655885B2 (ja) | 接着剤組成物、フィルム状接着剤、接着剤シート及びそれを用いた半導体装置 | |
JP2012164891A (ja) | 半導体用粘接着シート、半導体用粘接着シートの製造方法、半導体ウエハ、半導体装置及び半導体装置の製造方法 | |
JP5374983B2 (ja) | 半導体装置の製造方法 | |
JP5374972B2 (ja) | 接着フィルム、接着シート、半導体装置及び半導体装置の製造方法 | |
JP2010059387A (ja) | 接着剤組成物、フィルム状接着剤、接着シート及び半導体装置 | |
JP2011042729A (ja) | 接着剤組成物、フィルム状接着剤、接着シート及び半導体装置 | |
JP5374969B2 (ja) | 接着フィルム、接着シート、半導体装置及び半導体装置の製造方法 | |
JP5374982B2 (ja) | 半導体装置の製造方法 | |
JP5374971B2 (ja) | 接着フィルム、接着シート、半導体装置及び半導体装置の製造方法 | |
JP5365113B2 (ja) | 半導体装置の製造方法 | |
JP5374970B2 (ja) | 半導体装置の製造方法 | |
JP2009263615A (ja) | 接着フィルム、接着フィルムの製造方法、接着シート、半導体装置及び半導体装置の製造方法 | |
JP2009068004A (ja) | 接着剤組成物、フィルム状接着剤、接着剤シート及びそれを用いた半導体装置 | |
JP5439818B2 (ja) | 接着剤組成物、フィルム状接着剤、接着シート及び半導体装置 | |
JP2010001453A (ja) | 接着フィルム、接着シート、半導体装置及び半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110701 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120809 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120814 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121012 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130625 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130702 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130827 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130909 |
|
LAPS | Cancellation because of no payment of annual fees |