JP2009260379A - Bonding apparatus and bonding method using the same - Google Patents

Bonding apparatus and bonding method using the same Download PDF

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JP2009260379A
JP2009260379A JP2009178493A JP2009178493A JP2009260379A JP 2009260379 A JP2009260379 A JP 2009260379A JP 2009178493 A JP2009178493 A JP 2009178493A JP 2009178493 A JP2009178493 A JP 2009178493A JP 2009260379 A JP2009260379 A JP 2009260379A
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thermocompression bonding
stage
bonding apparatus
circuit element
liquid crystal
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JP4983872B2 (en
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Yoshitaka Fujita
義高 藤田
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Casio Computer Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75314—Auxiliary members on the pressing surface
    • H01L2224/75315—Elastomer inlay
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Wire Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an inexpensive thermocompression bonding apparatus having a simple structure, in which thermal deformation such as warpage of circuit elements does not occur on a circuit board through electroconductive adhesives composed of thermosetting resins, and sure mounting with electrical conductive connection is performed. <P>SOLUTION: In the thermocompression bonding apparatus, there are formed a concave pressing face 21a of the press head 21 of a thermocompression bonding tool 20 on a curved concave face, and a supporting face 12a of the compression support member 12 of a stage 10 on a curved convex face. A liquid panel work W on which a semiconductor chip 6 is mounted at a predetermined position of the substrate extending portion 3a of a liquid display element 1 with an anisotropic electroconductive adhesive 7 is set on the thermocompression bonding apparatus. The surface of the semiconductor chip 6 is heat pressed with the pressing face 21a whose temperature is raised with a heater 23 embedded in the body 22 of the thermocompression bonding tool 20. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、加熱しつつ加圧する熱圧着式のボンディング装置に関する。   The present invention relates to a thermocompression bonding apparatus that applies pressure while heating.

従来、回路基板上の所定位置に半導体チップ等の回路素子を異方性導電接着材等の熱硬化性接着剤をベースとした導電接着部材により導通設置する場合、特許文献１に示されるような熱圧着式のボンディング装置が用いられている。   Conventionally, when a circuit element such as a semiconductor chip is conductively installed at a predetermined position on a circuit board by a conductive adhesive member based on a thermosetting adhesive such as an anisotropic conductive adhesive, as disclosed in Patent Document 1 A thermocompression bonding apparatus is used.

特許文献１に示される熱圧着式ボンディング装置は、大略、例えば液晶表示パネルにＬＳＩチップが異方性導電接着材を介して配置されているような被圧着物(以下、ワークという)を支持するステージと、このワークを加熱しつつ加圧する熱圧着ツールとからなる。   The thermocompression bonding apparatus disclosed in Patent Document 1 generally supports an object to be bonded (hereinafter referred to as a workpiece) in which an LSI chip is disposed on an LCD panel via an anisotropic conductive adhesive, for example. It consists of a stage and a thermocompression bonding tool that pressurizes the workpiece while heating it.

このようなボンディング装置による場合、ワーク全体を均等に加熱しつつ圧着させることが難しく、熱圧着が終了した時点での熱圧着ツールに接触していた部材とステージに支持されていた部材との温度差が極めて大きい。   In the case of such a bonding apparatus, it is difficult to press the entire work evenly, and the temperature between the member that is in contact with the thermocompression bonding tool and the member that is supported on the stage at the time when the thermocompression bonding is completed. The difference is extremely large.

例えば液晶表示パネルのガラス基板にＬＳＩチップをＣＯＧ(Chip On Glass)搭載する場合、異方性導電接着材中のエポキシ樹脂等の熱硬化性樹脂を硬化させるには２２０℃程度まで加熱する必要があるため、熱圧着ツールを２６０℃に昇温させてＬＳＩチップに圧接させ、ＬＳＩチップを２４０℃程度まで加熱する。このため、熱圧着が終了した時点では、ＬＳＩチップがガラス基板よりも１００℃以上も高くなっている。   For example, when an LSI chip is mounted on a glass substrate of a liquid crystal display panel by COG (Chip On Glass), it is necessary to heat to about 220 ° C. in order to cure a thermosetting resin such as an epoxy resin in an anisotropic conductive adhesive. For this reason, the thermocompression bonding tool is heated to 260 ° C. and pressed against the LSI chip, and the LSI chip is heated to about 240 ° C. For this reason, when the thermocompression bonding is completed, the LSI chip is higher than the glass substrate by 100 ° C. or more.

このため、ＬＳＩチップが熱圧着された液晶表示パネルが常温に戻ると、ＬＳＩチップがガラス基板よりも大きく収縮し、その結果、液晶表示パネルに反り等の熱変形が発生する。液晶表示パネルに反りが発生すると、液晶表示パネルにおける基板間ギャップ(液晶層厚)が不均一となり、コントラストのバラツキや表示ムラ等の表示不良を引き起こす。また、ＬＳＩチップと液晶表示パネルの接続端子との間の異方性導電接着材を介した導通接続部に熱変形による残留内部応力が発生し、液晶表示パネルの信頼性や歩留りを低下させる。   For this reason, when the liquid crystal display panel to which the LSI chip is thermocompression bonded returns to room temperature, the LSI chip contracts more than the glass substrate, and as a result, thermal deformation such as warpage occurs in the liquid crystal display panel. When the liquid crystal display panel is warped, the inter-substrate gap (liquid crystal layer thickness) in the liquid crystal display panel becomes non-uniform, causing display defects such as contrast variations and display unevenness. In addition, residual internal stress due to thermal deformation is generated in the conductive connection portion via the anisotropic conductive adhesive between the LSI chip and the connection terminal of the liquid crystal display panel, thereby reducing the reliability and yield of the liquid crystal display panel.

そこで、上述の熱圧着ボンディング時におけるワークの温度差を解消するために、特許文献１にも示されるように、熱圧着ツールとステージの双方に加熱機構を設ける方法が提案されているが、この方法による場合、温度制御システム等が必要となり装置全体が大掛かりで高価なものとなる。   Then, in order to eliminate the temperature difference of the workpiece | work at the time of the above-mentioned thermocompression bonding, as shown also in patent document 1, the method of providing a heating mechanism in both a thermocompression-bonding tool and a stage is proposed, but this In the case of the method, a temperature control system or the like is required, and the entire apparatus is large and expensive.

特開平１１−１８６３３８号公報JP-A-11-186338

本発明の課題は、回路素子を熱硬化性樹脂からなる導電接着部材を介して回路基板上に反り等の熱変形を生じさせることなく確実に導通接続させて搭載することが可能であると共に構造が簡素で安価な熱圧着式ボンディング装置を提供することである。   The problem of the present invention is that the circuit element can be securely connected and mounted on the circuit board via a conductive adhesive member made of a thermosetting resin without causing thermal deformation such as warping. Is to provide a simple and inexpensive thermocompression bonding apparatus.

一方の発明のボンディング装置は、回路基板表面の所定位置に回路素子を熱硬化性の導電接着部材を介して搭載するボンディング装置であって、前記回路基板の少なくとも前記回路素子が搭載される領域を支持する支持面が、湾曲した凸面をなすステージと、加熱手段を有し、前記ステージに支持された回路基板上に載置された前記回路素子を加熱しつつ加圧するために当接させる押圧面が前記ステージの支持面の曲率に対応した曲率で湾曲した凹面をなす熱圧着ツールとを、備えることを特徴とするものである。   A bonding apparatus according to another aspect of the invention is a bonding apparatus for mounting a circuit element at a predetermined position on the surface of a circuit board via a thermosetting conductive adhesive member, and at least an area of the circuit board on which the circuit element is mounted. The supporting surface is a pressing surface that includes a stage having a curved convex surface and a heating unit, and abuts to pressurize the circuit element placed on the circuit board supported by the stage while heating. And a thermocompression bonding tool having a concave surface curved with a curvature corresponding to the curvature of the support surface of the stage.

他方の発明のボンディング装置は、回路基板表面の所定位置に回路素子を熱硬化性の導電接着部材を介して搭載するボンディング装置であって、前記回路基板の前記回路素子が搭載される領域の中央部を支持するステージと、加熱手段を有し、前記ステージに支持された回路基板上に配置されている前記回路素子に当接し、前記回路素子を加熱するとともに、前記回路素子の両側部を加圧する熱圧着ツールとを、備えることを特徴とする。   A bonding apparatus according to another aspect of the invention is a bonding apparatus for mounting a circuit element at a predetermined position on the surface of a circuit board via a thermosetting conductive adhesive member, in the center of the area where the circuit element is mounted on the circuit board. A stage that supports the heating element, and abuts against the circuit element disposed on the circuit board supported by the stage to heat the circuit element and add both sides of the circuit element. And a thermocompression bonding tool for pressing.

本発明のボンディング装置によれば、熱圧着工程点において、ワークの熱圧着ツールに接触していた高温側が伸長して凸面となった反りと同様の曲面をステージと熱圧着ツールとの間に形成しているから、ワークが常温に戻った時点ではその高温側の伸長分が大きく収縮することによりキャンセルされて凸面が平坦面となる。その結果、ステージ側に加熱手段を設けない簡素な構造により、反りがなく回路素子が回路基板の所定位置に確実に導通接続されて搭載された信頼性の高い製品を生産効率良く製造することができる。   According to the bonding apparatus of the present invention, at the point of the thermocompression bonding, a curved surface similar to the warp formed by extending the high-temperature side of the workpiece that has been in contact with the thermocompression bonding tool to form a convex surface is formed between the stage and the thermocompression bonding tool. Therefore, when the workpiece returns to room temperature, the extension on the high temperature side is greatly shrunk so that the convex surface becomes a flat surface. As a result, a simple structure that does not have a heating means on the stage side can produce a highly reliable product in which circuit elements are securely connected to predetermined positions on the circuit board without warping and are produced with high production efficiency. it can.

一方の発明の一実施形態としてのボンディング装置による熱圧着工程を示す斜視図である。It is a perspective view which shows the thermocompression bonding process by the bonding apparatus as one Embodiment of one invention. (ａ)は上記ボンディング装置による熱圧着工程におけるワーク挟圧状態を示す模式的側断面図で、(ｂ)は熱圧着を終え放置冷却されて得られた液晶表示パネルを示す模式的断面図である。(a) is a schematic sectional side view showing a workpiece clamping state in the thermocompression bonding process by the bonding apparatus, and (b) is a schematic sectional view showing a liquid crystal display panel obtained by cooling after leaving the thermocompression bonding. is there. (ａ)は他方の発明の一実施形態としてのボンディング装置とワークの各構成を分解して示す模式的分解説明図で、(ｂ)はそのボンディング装置によるワーク挟圧状態示す模式的側断面図である。(a) is a schematic exploded explanatory view showing the components of the bonding apparatus and workpiece as an embodiment of the other invention in an exploded manner, and (b) is a schematic side sectional view showing a workpiece clamping state by the bonding apparatus. It is. 図３の実施形態の変形例を示す模式的分解説明図である。It is a typical exploded explanatory view showing a modification of the embodiment of FIG. 図１に示す実施形態の変形例を示す模式的側断面図である。It is a typical sectional side view which shows the modification of embodiment shown in FIG.

一方の発明のボンディング装置においては、熱圧着ツールを湾曲した凹面の押圧面を有する当接部材とこの当接部材を着脱自在に保持すると共に回路素子に接離させる基体部とに分割することが好ましく、これにより、熱圧着ツールの製造が容易となりコストダウンが促進されると共に、当接する回路素子の種類に応じて当接部材を変えるだけで容易に多種類の回路素子のボンディングに対応することができる。   In the bonding apparatus according to one aspect of the invention, the thermocompression bonding tool may be divided into a contact member having a curved concave pressing surface and a base portion that detachably holds the contact member and contacts and separates from the circuit element. Preferably, this facilitates the manufacture of a thermocompression bonding tool, promotes cost reduction, and easily supports bonding of various types of circuit elements by simply changing the contact member according to the type of circuit element that contacts. Can do.

そして、上述のボンディング装置においては、熱圧着ツールの押圧面とステージの支持面とは、それぞれ、実質的に同心円の円周面をなしていることが好ましく、これにより、より均等に回路素子を回路基板に加圧して確実に導通接続させることができる。   In the above bonding apparatus, the pressing surface of the thermocompression bonding tool and the support surface of the stage are preferably substantially concentric circumferential surfaces, whereby circuit elements are more evenly distributed. The circuit board can be pressurized and reliably connected.

また、他方の発明のボンディング装置においては、ステージが回路基板を支持する支持部材及び該支持部材が設置される基体部とからなり、且つ、熱圧着ツールが加熱手段を有すると共に昇降駆動されるツール本体部及びこのツール本体部と回路素子との間に介在させる当接部材とからなることが好ましく、これにより、多機種の回路素子の種々の回路基板に対するボンディングに柔軟に対応できるとともに、ボンディング装置の製造コストが大幅に低減される。   In the bonding apparatus according to the other aspect of the invention, the stage includes a support member that supports the circuit board and a base portion on which the support member is installed, and the thermocompression bonding tool includes a heating unit and is driven up and down. It is preferable to comprise a main body part and an abutting member interposed between the tool main body part and the circuit element, thereby flexibly supporting bonding of various types of circuit elements to various circuit boards, and a bonding apparatus. The manufacturing cost is greatly reduced.

以下、本発明の好適な実施形態について説明する。
図１は、本発明の一実施形態としての熱圧着式ボンディング装置によって液晶表示素子にＬＳＩチップをＣＯＧボンディングする工程を示す斜視図で、図２(ａ)はその熱圧着工程における圧着状態を示す模式的側断面図、図２(ｂ)は熱圧着を終え放置冷却されて得られた液晶表示パネルを示す模式的断面図である。 Hereinafter, preferred embodiments of the present invention will be described.
FIG. 1 is a perspective view showing a process of COG bonding an LSI chip to a liquid crystal display element by a thermocompression bonding apparatus as an embodiment of the present invention, and FIG. 2A shows a crimped state in the thermocompression bonding process. FIG. 2B is a schematic cross-sectional view showing a liquid crystal display panel obtained by cooling after standing by thermocompression bonding.

本実施形態のボンディング装置により熱圧着される一方の被圧着物である液晶表示素子１は、電極（不図示）が形成された一対のガラス基板２、３を、それぞれの電極形成面を対向させて枠状シール材(不図示)により所定の間隙を保って接合し、枠状シール材で囲まれたガラス基板２、３間に液晶(不図示)を封入して、構成されている。ガラス基板２、３の各外面(液晶封入側を内面とした場合の)には、前偏光板４と後偏光板(不図示)がそれぞれ貼着されている。本実施形態の液晶表示素子１は単純マトリクス方式の液晶表示素子であり、一対のガラス基板２、３の各対向面(内面)には、それぞれ、互いに直交する方向に複数のストライプ電極が平行に配設されている。   In the liquid crystal display element 1 which is one object to be bonded by thermocompression bonding with the bonding apparatus of this embodiment, a pair of glass substrates 2 and 3 on which electrodes (not shown) are formed are opposed to each other. In this structure, a frame-shaped sealing material (not shown) is joined while maintaining a predetermined gap, and a liquid crystal (not shown) is sealed between the glass substrates 2 and 3 surrounded by the frame-shaped sealing material. A front polarizing plate 4 and a rear polarizing plate (not shown) are respectively attached to the outer surfaces of the glass substrates 2 and 3 (when the liquid crystal sealing side is the inner surface). The liquid crystal display element 1 of the present embodiment is a simple matrix type liquid crystal display element, and a plurality of stripe electrodes are parallel to each other on the opposing surfaces (inner surfaces) of the pair of glass substrates 2 and 3, respectively. It is arranged.

ガラス基板２、３のうちの一方のガラス基板３には、縁部を他方のガラス基板２の対応する端面よりも外側(液晶封入側を内側として)へ延出させて、延出部３ａが形成されている。この延出部３ａの表面（電極形成面の延長面）には、両基板２、３の各電極に接続されている複数の引き出し配線５及びそれらの各接続端子（不図示）が配設されている。   One glass substrate 3 of the glass substrates 2 and 3 has an edge extending outside the corresponding end surface of the other glass substrate 2 (with the liquid crystal sealing side inside), and an extending portion 3a. Is formed. A plurality of lead wires 5 connected to the electrodes of both substrates 2 and 3 and their connection terminals (not shown) are disposed on the surface of the extension portion 3a (extension surface of the electrode forming surface). ing.

上述の引き出し配線５及び接続端子列が配設された延出部３ａに、液晶を駆動する駆動回路素子としての半導体チップ６がＣＯＧ（Chip On Glass）方式により直接搭載される。この場合、もう一方の被圧着物である半導体チップ６は、図２に示されるように、チップ本体６ａの裏面に複数の端子電極６ｂが所定の配置で凸設されてなる。そして、この半導体チップ６は、異方性導電接着材７を介して、基板延出部３ａ表面の所定位置に熱圧着ボンディングされる。異方性導電接着材７は、エポキシ樹脂からなるバインダ樹脂７ａ中に多数の導電性粒子７ｂが分散混合されてなる。   A semiconductor chip 6 as a drive circuit element for driving a liquid crystal is directly mounted on the extension part 3a in which the above-described lead-out wiring 5 and connection terminal row are arranged by a COG (Chip On Glass) method. In this case, as shown in FIG. 2, the semiconductor chip 6 which is the other object to be bonded is formed by projecting a plurality of terminal electrodes 6b in a predetermined arrangement on the back surface of the chip body 6a. The semiconductor chip 6 is bonded by thermocompression bonding to a predetermined position on the surface of the substrate extension 3 a via an anisotropic conductive adhesive 7. The anisotropic conductive adhesive 7 is obtained by dispersing and mixing a large number of conductive particles 7b in a binder resin 7a made of an epoxy resin.

本実施形態における熱圧着ボンディング装置は、半導体チップ６が異方性導電接着材７を介して所定位置に配置された液晶表示素子１つまりワークＷを支持するステージ１０と、載置された半導体チップを加熱しつつ加圧する熱圧着ツール２０とからなる。   The thermocompression bonding apparatus according to this embodiment includes a stage 10 that supports a liquid crystal display element 1, that is, a workpiece W, in which a semiconductor chip 6 is disposed at a predetermined position via an anisotropic conductive adhesive 7, and a mounted semiconductor chip. And a thermocompression bonding tool 20 that pressurizes while heating.

本実施形態のステージ１０は、液晶表示素子１の液晶が封入された本体部を支持する本体支持部１１と、半導体チップ６が配置された基板延出部３ａを支持する圧着支持部１２を備えている。ステージ１０の幅Ｌ1は、液晶表示パネル１の幅Ｌ2に一致させてある。また、本体支持部１１の支持面１１ａは平坦面に形成されている。   The stage 10 of this embodiment includes a main body support portion 11 that supports the main body portion in which the liquid crystal of the liquid crystal display element 1 is sealed, and a crimping support portion 12 that supports the substrate extension portion 3a on which the semiconductor chip 6 is disposed. ing. The width L1 of the stage 10 is matched with the width L2 of the liquid crystal display panel 1. Moreover, the support surface 11a of the main body support part 11 is formed in a flat surface.

圧着支持部１２の支持面１２ａは、所定の曲率の円周をなす凸面に形成されている。この支持面１２ａの曲率については、後程詳細に説明する。   The support surface 12a of the crimping support portion 12 is formed as a convex surface that forms a circumference with a predetermined curvature. The curvature of the support surface 12a will be described in detail later.

一方、熱圧着ツール２０は、押圧ヘッド部２１とこれを保持する基体部２２からなる。押圧ヘッド部２１には、ヒータ２３が埋設されている。そして、この押圧ヘッド部２１の半導体チップ６に当接させる押圧面２１ａは、ステージ１０の圧着支持面１２ａに対応する曲率で湾曲した凹面をなしている。ここで、圧着支持面１２ａに対応した曲率で湾曲した凹面とは、圧着支持面１２ａに支持されたガラス基板３に半導体チップ６を異方性導電接着材７を介して配置したワークＷに対して、押圧面２１ａを当接させて所定の圧力で加圧した際にワーク全体を破損させずに湾曲させることができる曲率をいう。この圧着支持面１２ａの曲率とこれに対応する押圧面２１ａの曲率は、試作や実験を経ることにより、ガラス基板３や半導体チップ６の大きさ或いは材質に応じて最適に設定される。   On the other hand, the thermocompression bonding tool 20 includes a pressing head portion 21 and a base portion 22 that holds the pressing head portion 21. A heater 23 is embedded in the pressing head portion 21. The pressing surface 21 a abutted against the semiconductor chip 6 of the pressing head portion 21 forms a concave surface curved with a curvature corresponding to the pressure-bonding support surface 12 a of the stage 10. Here, the concave surface curved with a curvature corresponding to the pressure-bonding support surface 12a refers to the workpiece W in which the semiconductor chip 6 is disposed on the glass substrate 3 supported by the pressure-bonding support surface 12a via the anisotropic conductive adhesive material 7. Thus, it refers to a curvature that can be curved without damaging the entire workpiece when the pressing surface 21a is brought into contact with and pressed with a predetermined pressure. The curvature of the crimping support surface 12a and the corresponding curvature of the pressing surface 21a are optimally set according to the size or material of the glass substrate 3 and the semiconductor chip 6 through trial manufacture and experiments.

本実施形態のステージ１２における圧着支持面１２ａの曲率は、２０ｍｍ(長さ)×３ｍｍ(幅)×０．４ｍｍ(厚さ)のサイズの半導体チップ６に５μｍの湾曲変形量(反りの大きさ)Ｒを生じさせることができるように、設定されている。これに対して、前述した熱圧着ツール２０側の押圧面２１ａは、ステージ１２側の圧着支持面１２ａと同心円の円周面に形成されている。すなわち、押圧面２１ａは、熱圧着が終了した時点におけるワークの厚さ分だけ、圧着支持面１２ａよりも半径が大きい円周面をなしている。   The curvature of the pressure-bonding support surface 12a in the stage 12 of this embodiment is such that the amount of bending deformation (the amount of warpage) is 5 μm on the semiconductor chip 6 having a size of 20 mm (length) × 3 mm (width) × 0.4 mm (thickness). ) R can be generated. On the other hand, the pressing surface 21a on the thermocompression bonding tool 20 side described above is formed on a circumferential surface concentric with the pressure bonding support surface 12a on the stage 12 side. That is, the pressing surface 21a forms a circumferential surface having a larger radius than the pressure-bonding support surface 12a by the thickness of the workpiece at the time when the thermocompression bonding is completed.

これにより、半導体チップ６全体が液晶表示素子１の基板延出部３ａに向けて均等に押圧され、半導体チップ６の端子電極６ｂと基板延出部３ａにおける各種配線の接続端子５ａとが異方性導電接着材７を介して確実に導通接続される。   As a result, the entire semiconductor chip 6 is pressed evenly toward the substrate extension 3a of the liquid crystal display element 1, and the terminal electrodes 6b of the semiconductor chip 6 and the connection terminals 5a of various wirings in the substrate extension 3a are anisotropic. Conductive connection is ensured through the conductive conductive adhesive 7.

熱圧着ツール２０の基体部２２は、図示しない駆動部に連結されている。駆動部には昇降機構と加圧機構が設けられており、熱圧着ツール２０全体を半導体チップ６に対して昇降させると共に押圧ヘッド部２１を所定の圧力で半導体チップ６に圧接させる。   The base part 22 of the thermocompression bonding tool 20 is connected to a drive part (not shown). The drive unit is provided with an elevating mechanism and a pressurizing mechanism. The entire thermocompression bonding tool 20 is moved up and down with respect to the semiconductor chip 6 and the pressing head unit 21 is pressed against the semiconductor chip 6 with a predetermined pressure.

次に、上記熱圧着ボンディング装置による熱圧着作業手順とその際の動作について、説明する。   Next, the thermocompression work procedure by the thermocompression bonding apparatus and the operation at that time will be described.

まず、液晶表示素子１の基板延出部３ａの所定位置に異方性導電接着材７を配置し、この上に半導体チップ６を正確に位置合わせを行いつつ配置する。この位置合わせでは、双方の位置基準のアライメントマーク(不図示)をカメラ認識しつつ位置を合わせ、基板延出部３ａに形成された各種配線の接続端子５ａに半導体チップ６の対応する端子電極６ａを重ならせる。   First, the anisotropic conductive adhesive 7 is disposed at a predetermined position of the substrate extension portion 3a of the liquid crystal display element 1, and the semiconductor chip 6 is disposed thereon while accurately aligning. In this alignment, both the position reference alignment marks (not shown) are aligned while being recognized by the camera, and the corresponding terminal electrodes 6a of the semiconductor chip 6 are connected to the connection terminals 5a of various wirings formed on the substrate extension 3a. Overlapping

次いで、上述のように液晶表示素子１に半導体チップ６が異方性導電接着材７を介して配置されたワークＷを、ステージ１０の所定位置に載置する。この際、図１に示されるように、液晶表示素子１の基板延出部３ａがステージ１０の圧着支持面１２ａに整合した状態で重なるように位置決めして載置する。   Next, the workpiece W in which the semiconductor chip 6 is arranged on the liquid crystal display element 1 via the anisotropic conductive adhesive 7 as described above is placed at a predetermined position of the stage 10. At this time, as shown in FIG. 1, the substrate extending portion 3 a of the liquid crystal display element 1 is positioned and placed so as to overlap with the crimping support surface 12 a of the stage 10.

また、上述のワークＷの載置作業に併行して、熱圧着ツール２０のヒータ２３をオンし、押圧ヘッド部２１の押圧面２１ａを所定の例えば２６０℃に昇温させる。   In parallel with the above-described work of placing the workpiece W, the heater 23 of the thermocompression bonding tool 20 is turned on, and the pressing surface 21a of the pressing head portion 21 is heated to a predetermined temperature of 260 ° C., for example.

次に、熱圧着ツール２０の昇降機構を駆動して熱圧着ツール２０全体を降下させ、押圧ヘッド部２１の押圧面２１ａを半導体チップ６のチップ本体６ａの表面に当接させた後、加圧機構を駆動して所定の圧力で半導体チップ６を加圧し基板延出部３ａに向けて押圧する。   Next, the elevating mechanism of the thermocompression bonding tool 20 is driven to lower the entire thermocompression bonding tool 20 so that the pressing surface 21a of the pressing head portion 21 is brought into contact with the surface of the chip body 6a of the semiconductor chip 6 and then pressed. The mechanism is driven to pressurize the semiconductor chip 6 with a predetermined pressure and press it toward the substrate extension 3a.

これにより、半導体チップ６のチップ本体６ａと液晶表示素子１の基板延出部３ａが、それぞれ、接触する押圧ヘッド部２１の押圧面２１ａとステージ２０の圧着支持面１２ａに沿って湾曲すると共に、異方性導電接着材７中の導電性粒子７ｂが半導体チップ６側の端子電極６ｂと液晶表示素子１側の接続端子５ａ間に挟圧される。なおこの際、液晶表示素子１側の基板延出部３ａは、両側部が圧着支持面１２ａに沿うまで湾曲しないが、少なくとも半導体チップ６の搭載領域は圧着支持面１２ａに沿って湾曲させることができるから、両者の導通接続に支障を生じさせることはない。   As a result, the chip body 6a of the semiconductor chip 6 and the substrate extending portion 3a of the liquid crystal display element 1 are curved along the pressing surface 21a of the pressing head portion 21 and the pressure-bonding support surface 12a of the stage 20, respectively. The conductive particles 7b in the anisotropic conductive adhesive 7 are sandwiched between the terminal electrode 6b on the semiconductor chip 6 side and the connection terminal 5a on the liquid crystal display element 1 side. At this time, the substrate extending portion 3a on the liquid crystal display element 1 side does not bend until both side portions are along the crimping support surface 12a, but at least the mounting region of the semiconductor chip 6 is curved along the crimping support surface 12a. Therefore, there is no problem in the conductive connection between the two.

上述の挟圧状態を所定時間継続すると、異方性導電接着材７中のエポキシ樹脂７ａが２２０℃程度に加熱されて硬化し、上述の端子電極６ｂと接続端子５ａとが導電性粒子７ｂを介して導通接続された状態で半導体チップ６が基板延出部３ａに固着される。   When the above-mentioned clamping state is continued for a predetermined time, the epoxy resin 7a in the anisotropic conductive adhesive 7 is heated to about 220 ° C. and cured, and the terminal electrode 6b and the connection terminal 5a connect the conductive particles 7b. The semiconductor chip 6 is fixed to the substrate extending portion 3a in a state of being conductively connected through.

この後、熱圧着ツール２０を上昇させて挟圧状態を解除し、液晶表示素子１に半導体チップ６が熱圧着ボンディングされた液晶パネルワークＷをボンディング装置から取り出し、所定のヤードに搬送して放置し常温冷却する。これにより、取り出した時点では図２(ａ)に示されるように湾曲していた液晶パネルワークＷが、図２(ｂ)に示されるように、平坦な液晶表示パネルとなる。   Thereafter, the thermocompression bonding tool 20 is raised to release the clamping state, and the liquid crystal panel work W in which the semiconductor chip 6 is bonded to the liquid crystal display element 1 by thermocompression bonding is taken out from the bonding apparatus, transported to a predetermined yard, and left. And cool at room temperature. Thereby, the liquid crystal panel work W which has been curved as shown in FIG. 2A at the time of taking out becomes a flat liquid crystal display panel as shown in FIG. 2B.

すなわち、一般に、加熱物の冷却においては、高温に加熱されていた部位ほど冷却したときの収縮率が大きい。因みに、上述した液晶表示パネル体においては、熱圧着ツール２０に接触する半導体チップ６は２４０℃程度に加熱されるが、このときの液晶表示素子１のガラス基板３は１００℃程度に加熱されるだけで、１００℃以上の温度差が生じている。従って、最も高温に加熱されていた半導体チップ６のチップ本体６ａ表面の収縮率が最も大きく、この面は凸状の湾曲面をなしているから収縮することにより平坦面となり、これに引きずられるように液晶パネルワークＷ全体が平坦化される。   That is, in general, in the cooling of a heated object, the contraction rate when the portion heated to a high temperature is cooled is large. Incidentally, in the liquid crystal display panel described above, the semiconductor chip 6 that contacts the thermocompression bonding tool 20 is heated to about 240 ° C., but the glass substrate 3 of the liquid crystal display element 1 at this time is heated to about 100 ° C. As a result, a temperature difference of 100 ° C. or more occurs. Therefore, the shrinkage rate of the surface of the chip body 6a of the semiconductor chip 6 that has been heated to the highest temperature is the largest, and since this surface forms a convex curved surface, it becomes a flat surface by shrinking and is dragged by this. The entire liquid crystal panel work W is flattened.

以上のように、本実施形態のボンディング装置によれば、高温側である熱圧着ツール２０のワーク押圧面２１ａを凹面に湾曲させ、低温側であるステージ１０の圧着支持面１２ａを凸面に湾曲させたから、熱圧着終了時には、高温側のワーク表面つまり半導体６のチップ本体６ａ表面が凸面に、低温側のワーク表面である基板延出部３ａ外面が凹面に、それぞれ湾曲した液晶パネルワークＷが得られる。そして、この熱圧着プロセスにおいて液晶パネルワークＷに発生した湾曲状の反りが、常温に冷却されることによってキャンセルされ、全体が高度に平坦化されると共に内部応力が開放された液晶表示パネルが得られる。かくして、温度制御システム等の複雑な機構を有しない簡素なボンディング装置により、表示ムラ等の無い良好な表示品質が得られると共に信頼性に優れた液晶表示パネルを、容易に製造することが可能となる。   As described above, according to the bonding apparatus of the present embodiment, the work pressing surface 21a of the thermocompression bonding tool 20 on the high temperature side is curved to a concave surface, and the crimping support surface 12a of the stage 10 on the low temperature side is curved to a convex surface. Therefore, at the end of the thermocompression bonding, a curved liquid crystal panel workpiece W is obtained, with the workpiece surface on the high temperature side, that is, the surface of the chip body 6a of the semiconductor 6 being convex, and the outer surface of the substrate extension portion 3a being the workpiece surface on the low temperature side being concave. It is done. Then, the curved warp generated in the liquid crystal panel work W in this thermocompression bonding process is canceled by being cooled to room temperature, and a liquid crystal display panel in which the whole is highly flattened and internal stress is released is obtained. It is done. Thus, a simple bonding apparatus that does not have a complicated mechanism such as a temperature control system makes it possible to easily produce a liquid crystal display panel having excellent display quality without display unevenness and having excellent reliability. Become.

また、本実施形態のボンディング装置では、液晶パネルワークＷを挟圧する押圧ヘッド部２１の押圧面２１ａとステージ支持面１２ａとを実質的に同心円の円周面となるように形成したから、熱圧着プロセスにおいて半導体チップ６全体を基板延出部３ａに対して均等に押圧することができ、半導体チップ６の端子電極６ｂが異方性導電接着材７の導電性粒子７ｂを介してより確実に液晶表示素子１の接続端子５ａに導通接続される。   Further, in the bonding apparatus of the present embodiment, the pressing surface 21a of the pressing head portion 21 that sandwiches the liquid crystal panel work W and the stage support surface 12a are formed so as to be substantially concentric circumferential surfaces. In the process, the entire semiconductor chip 6 can be pressed evenly against the substrate extension 3 a, and the terminal electrode 6 b of the semiconductor chip 6 can be more reliably liquid crystal via the conductive particles 7 b of the anisotropic conductive adhesive 7. Conductive connection is made to the connection terminal 5a of the display element 1.

次に、本発明の他の実施形態について、図３に基づき説明する。なお、上記実施形態と同一の構成要素については同一の符号を付して、その説明を省略する。   Next, another embodiment of the present invention will be described with reference to FIG. In addition, the same code | symbol is attached | subjected about the component same as the said embodiment, and the description is abbreviate | omitted.

本実施形態における熱圧着ツール３０は、当接部材３１とツール本体３２とからなり、ツール本体３２にヒータ３３が埋設されている。当接部材３１は、面積がチップ本体６ａの表面よりも広い１枚の当接板３１ａと、面積が当接板３１ａの(１／４)程度の一対の介装板３１ｂ、３１ｂとからなり、これら介装板３１ｂ、３１ｂ及び当接板３１ａは、共に耐熱性及び熱伝導性に優れた例えばフッ素樹脂或いはシリコン樹脂等の弾性樹脂材料で形成されている。そして、これら当接板３１ａ及び介装板３１ｂ、３１ｂは、液晶パネルワークＷとツール本体３２との間に、介装板３１ｂ、３１ｂが当接板３１ａのツール本体３２側表面にその長手方向中心ラインに関して対称に位置する配置で、介装されている。   The thermocompression bonding tool 30 in this embodiment includes an abutting member 31 and a tool main body 32, and a heater 33 is embedded in the tool main body 32. The contact member 31 is composed of a single contact plate 31a having a larger area than the surface of the chip body 6a and a pair of interposition plates 31b and 31b whose area is about (1/4) of the contact plate 31a. These intervening plates 31b and 31b and the contact plate 31a are both made of an elastic resin material such as a fluororesin or a silicon resin, which is excellent in heat resistance and heat conductivity. The contact plates 31a and the interposition plates 31b and 31b are disposed between the liquid crystal panel work W and the tool main body 32, and the interposition plates 31b and 31b are arranged on the surface of the contact plate 31a on the tool main body 32 side in the longitudinal direction. They are arranged in a symmetrical arrangement with respect to the central line.

一方、ステージ４０は、支持部材４１とステージ本体４２とからなる。支持部材４１は、面積が基板延出部の面積に略等しい一枚の当接板４１ａと、その１／３〜１／４程度の面積の一枚の介装板４１ｂとからなり、共に、耐熱性及び熱伝導性に優れたフッ素樹脂或いはシリコン樹脂等の弾性樹脂材料で形成されている。そして、これら当接板４１ａ及び介装板４１ｂは、液晶パネルワークＷとステージ本体４２との間に、介装板４１ｂが支持板４１ａのステージ本体４２側表面の長手方向中央に位置した配置で、介装されている。   On the other hand, the stage 40 includes a support member 41 and a stage main body 42. The support member 41 includes a single abutting plate 41a having an area substantially equal to the area of the substrate extension portion, and a single interposed plate 41b having an area of about 1/3 to 1/4 thereof. It is made of an elastic resin material such as a fluororesin or a silicon resin having excellent heat resistance and thermal conductivity. The contact plate 41a and the interposition plate 41b are disposed between the liquid crystal panel work W and the stage main body 42 such that the interposition plate 41b is located at the center in the longitudinal direction of the surface of the support plate 41a on the stage main body 42 side. Has been intervened.

本実施形態のボンディング装置により液晶パネルワークＷを熱圧着加工するには、まず、ステージ本体４２上に支持部材４１を設置し、その上に液晶パネルワークＷをそれぞれのセンター位置を基準にして位置合わせを行いつつ載置し、次いで、その上に当接部材３１を同じくセンター位置基準で位置合わせを行いつつ載置する。これに、ヒータ３３をオンして先端部を約３５０℃程度に昇温させたツール本体３２の平坦な先端面を所定の圧力で圧接させる。   In order to perform the thermocompression bonding of the liquid crystal panel work W by the bonding apparatus of the present embodiment, first, the support member 41 is installed on the stage main body 42, and the liquid crystal panel work W is positioned on the basis of the respective center positions. Then, the contact member 31 is placed while being aligned on the basis of the center position. The flat tip end surface of the tool main body 32 whose temperature is raised to about 350 ° C. by turning on the heater 33 is pressed with a predetermined pressure.

これにより、図３(ｂ)に示されるように、液晶パネルワークＷとこれを挟圧する当接板３１ａと支持板４１ａとが略一体に湾曲すると共に、半導体チップ６の全ての端子電極６ｂが液晶パネル１の基板延出部３ａに向けて均等に押圧される。そして、各端子電極６ｂと対応する接続端子５ａとが導電性粒子７ｂを充分に大きい圧力で挟持した状態で、両者が確実に導通接続される。また、ツール本体３２が約３５０℃程度の高温に昇温されているから、この熱が高熱伝導性のテフロン（登録商標）樹脂からなる当接部材３１と半導体チップ６を介して異方性導電接着材７に速やかに伝導し、バインダ樹脂７ａを充分に硬化させる。   As a result, as shown in FIG. 3B, the liquid crystal panel work W, the contact plate 31a sandwiching the liquid crystal panel work W, and the support plate 41a are curved substantially integrally, and all the terminal electrodes 6b of the semiconductor chip 6 are formed. The liquid crystal panel 1 is pressed evenly toward the substrate extension 3a. Then, both the terminal electrodes 6b and the corresponding connection terminals 5a are securely connected to each other in a state where the conductive particles 7b are sandwiched with a sufficiently large pressure. Further, since the tool body 32 is heated to a high temperature of about 350 ° C., this heat is anisotropically conductive through the contact member 31 made of highly heat conductive Teflon (registered trademark) resin and the semiconductor chip 6. Conducting quickly to the adhesive 7, the binder resin 7 a is sufficiently cured.

従って、本実施形態のボンディング装置による場合も、前述の実施形態と同様に、熱圧着工程が終了した時点でボンディング装置から取り出した液晶パネルワークＷには、高温側のワーク表面つまり半導体６のチップ本体６ａ表面が凸面に、低温側の基板延出部３ａ外面が凹面に、それぞれ湾曲した反りが発生している。そして、この熱圧着プロセスにおいて発生した湾曲状の反りが、常温に冷却されることによってキャンセルされ、全体が高度に平坦化されると共に内部応力が開放された所望の液晶表示パネルが得られる。   Therefore, also in the case of the bonding apparatus of this embodiment, as in the above-described embodiment, the liquid crystal panel work W taken out from the bonding apparatus at the time when the thermocompression bonding process is completed includes the work surface on the high temperature side, that is, the chip of the semiconductor 6. Curved warping occurs on the surface of the main body 6a as a convex surface and on the outer surface of the substrate extension portion 3a on the low temperature side as a concave surface. Then, the curved warp generated in this thermocompression bonding process is canceled by being cooled to room temperature, and a desired liquid crystal display panel in which the whole is highly planarized and internal stress is released is obtained.

また、本実施形態では、熱圧着ツール３０におけるツール本体３２の先端面は平坦面で湾曲面に加工しなくてもよいから、熱圧着ツール３０を安価に製作でき、ボンディング装置のコストダウンが促進される。   Moreover, in this embodiment, since the front end surface of the tool main body 32 in the thermocompression bonding tool 30 is flat and does not have to be processed into a curved surface, the thermocompression bonding tool 30 can be manufactured at low cost, and cost reduction of the bonding apparatus is promoted. Is done.

加えて、本実施形態のボンディング装置は、熱圧着ツール３０側の当接部材３１とステージ４０側の支持部材４１を、液晶パネルワークの機種に応じてその機種に適合した各部材に容易に交換でき、製造すべき液晶表示パネルの機種変更に柔軟に対応できるという利点を備えている。   In addition, the bonding apparatus of the present embodiment easily replaces the contact member 31 on the thermocompression bonding tool 30 side and the support member 41 on the stage 40 side with each member suitable for the model according to the model of the liquid crystal panel work. It has the advantage that it can flexibly respond to the model change of the liquid crystal display panel to be manufactured.

次に、上記実施形態の変形例について、図４に基づき説明する。なお、本変形例においては、上記実施形態と同一の構成要素については同一の符号を付して、その説明を省略する。   Next, a modification of the above embodiment will be described with reference to FIG. In the present modification, the same components as those in the above embodiment are denoted by the same reference numerals, and the description thereof is omitted.

本変形例のボンディング装置は、液晶パネルワークＷを挟圧する熱圧着ツール５０側の当接部材５１とステージ６０側の支持部材６１を、それぞれ、単一の板で形成したものである。この場合、当接部材５１は、液晶パネルワークＷに接する当接面５１ａが平坦面に形成され、反対側の裏面５１ｂが湾曲した凹面を中央部に備える曲面に形成されている。一方、支持部材６１は、基板延出部３ａの外面に接する支持面６１ａが湾曲した凸面に形成され、反対側の裏面６１ｂは平坦面に形成されている。その他の構成は、上記実施形態と同じである。   In the bonding apparatus according to this modification, the contact member 51 on the thermocompression bonding tool 50 side and the support member 61 on the stage 60 side that sandwich the liquid crystal panel work W are formed of a single plate. In this case, the contact member 51 is formed in a curved surface having a contact surface 51a in contact with the liquid crystal panel workpiece W as a flat surface and a reverse surface 51b on the opposite side having a curved concave surface at the center. On the other hand, the support member 61 is formed in a convex surface with a curved support surface 61a in contact with the outer surface of the substrate extension 3a, and the opposite back surface 61b is formed in a flat surface. Other configurations are the same as those in the above embodiment.

このように構成された本変形例のボンディング装置による場合も、上記実施形態のボンディング装置による場合と同様に、全体が高度に平坦化されると共に内部応力が開放された所望の液晶表示パネルが容易に得られる。また、当接部材５１及び支持部材６１がともに単一の板部材であるから、製造すべき液晶表示パネルの機種変更に柔軟に対応できることは勿論、機種に応じたそれら部材の交換作業が容易となる。   Also in the case of the bonding apparatus according to this modified example configured as described above, as in the case of the bonding apparatus of the above-described embodiment, a desired liquid crystal display panel in which the whole is highly planarized and internal stress is released can be easily obtained. Is obtained. In addition, since both the contact member 51 and the support member 61 are a single plate member, it is possible to flexibly cope with a change in the model of the liquid crystal display panel to be manufactured, and it is easy to replace these members according to the model. Become.

なお、本発明は、上記の実施形態に限定されるものではない。
例えば、図１に示す実施形態において、図５に示すように、熱圧着ツール２０の押圧ヘッド部２１を基体部２２に対し着脱自在に分割してもよい。この場合、ヒータ２３は基体部２２に埋設することが好ましい。これにより、図３に示す実施形態等と同様に、製造すべき液晶表示パネルの機種変更に柔軟に対応可能となる。 In addition, this invention is not limited to said embodiment.
For example, in the embodiment shown in FIG. 1, as shown in FIG. 5, the pressing head portion 21 of the thermocompression bonding tool 20 may be detachably divided with respect to the base portion 22. In this case, the heater 23 is preferably embedded in the base portion 22. Thereby, like the embodiment shown in FIG. 3 and the like, it becomes possible to flexibly cope with a change in the model of the liquid crystal display panel to be manufactured.

また、図３に示す実施形態や図４に示すその変形例において、ステージは図１に示す実施形態のように湾曲支持面を備えた一体のステージとしてもよい。   Further, in the embodiment shown in FIG. 3 and its modification shown in FIG. 4, the stage may be an integral stage having a curved support surface as in the embodiment shown in FIG.

加えて、本発明は、被圧着ワークが液晶パネルである場合に限らず、回路基板表面の所定位置に回路素子を熱硬化性の導電接着部材を介して搭載する為の種々のボンディング装置に広く適用可能であることは、勿論である。   In addition, the present invention is not limited to the case where the work to be bonded is a liquid crystal panel, and is widely applied to various bonding apparatuses for mounting circuit elements at predetermined positions on the surface of a circuit board via thermosetting conductive adhesive members. Of course, it is applicable.

１ 液晶表示素子
２、３ ガラス基板
４ 前偏光板
５ 引き出し配線
６ 半導体チップ
７ 異方性導電接着材
１０、４０、６０ ステージ
１１ 本体支持部
１２ 圧着支持部
１２ａ、４１ａ 支持面
２０、３０、５０ 熱圧着ツール
２１ 押圧ヘッド部
２１ａ 押圧面
２２ 基体部
２３、３３ ヒータ
３１、５１ 当接部材
３２ ツール本体
４１、６１ 支持部材
４２ ステージ本体 DESCRIPTION OF SYMBOLS 1 Liquid crystal display element 2, 3 Glass substrate 4 Front polarizing plate 5 Lead-out wiring 6 Semiconductor chip 7 Anisotropic conductive adhesive 10, 40, 60 Stage 11 Main body support part 12 Crimp support part 12a, 41a Support surface 20, 30, 50 Thermocompression bonding tool 21 Pressing head portion 21a Pressing surface 22 Base portion 23, 33 Heater 31, 51 Contact member 32 Tool body 41, 61 Support member 42 Stage body

Claims (5)

回路基板表面の所定位置に回路素子を熱硬化性の導電接着部材を介して搭載するボンディング装置であって、
前記回路基板の少なくとも前記回路素子が搭載される領域を支持する支持面が、湾曲した凸面をなすステージと、
加熱手段を有し、前記ステージに支持された回路基板上に載置された前記回路素子を加熱しつつ加圧するために当接させる押圧面が、前記ステージの支持面の曲率に対応した曲率で湾曲した凹面をなす熱圧着ツールとを、備えることを特徴とするボンディング装置。 A bonding apparatus for mounting a circuit element on a predetermined position of a circuit board surface via a thermosetting conductive adhesive member,
A stage on which a support surface supporting at least a region where the circuit element is mounted of the circuit board forms a curved convex surface;
A pressing surface that has a heating means and abuts on the circuit element mounted on the circuit board supported by the stage to heat and pressurize the surface is a curvature corresponding to the curvature of the support surface of the stage. A bonding apparatus comprising: a thermocompression bonding tool having a curved concave surface. 前記熱圧着ツールは、前記押圧面を有する当接部材と、該当接部材を着脱自在に保持すると共に前記回路素子に接離させる基体部とから、なることを特徴とする請求項１に記載のボンディング装置。   The said thermocompression-bonding tool consists of the contact member which has the said press surface, and the base | substrate part which contacts and separates the said circuit element while hold | maintaining the said contact member so that attachment or detachment is possible. Bonding equipment. 前記熱圧着ツールの押圧面と前記ステージの支持面とは、それぞれ、実質的に同心円の円周面をなしている請求項１または請求項２に記載のボンディング装置。   The bonding apparatus according to claim 1, wherein the pressing surface of the thermocompression bonding tool and the support surface of the stage are substantially concentric circumferential surfaces. 回路基板表面の所定位置に回路素子を熱硬化性の導電接着部材を介して搭載するボンディング装置であって、
前記回路基板の前記回路素子が搭載される領域の中央部を支持するステージと、
加熱手段を有し、前記ステージに支持された回路基板上に配置されている前記回路素子に当接し、前記回路素子を加熱するとともに、前記回路素子の両側部を加圧する熱圧着ツールとを、備えることを特徴とするボンディング装置。 A bonding apparatus for mounting a circuit element on a predetermined position of a circuit board surface via a thermosetting conductive adhesive member,
A stage that supports a central portion of a region where the circuit element of the circuit board is mounted;
A thermocompression-bonding tool that has heating means, contacts the circuit element disposed on the circuit board supported by the stage, heats the circuit element, and pressurizes both sides of the circuit element; A bonding apparatus comprising: 前記ステージが前記回路基板を支持する支持部材及び該支持部材が設置される基体部とからなり、且つ、前記熱圧着ツールが前記加熱手段を有すると共に昇降駆動されるツール本体部及び該ツール本体部と前記回路素子との間に介在させる当接部材とからなることを特徴とする請求項４に記載のボンディング装置。   The stage comprises a support member for supporting the circuit board and a base portion on which the support member is installed, and the thermocompression bonding tool has the heating means and is driven up and down, and the tool body portion The bonding apparatus according to claim 4, further comprising a contact member interposed between the circuit element and the circuit element.
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