JP2009260340A5 - - Google Patents

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Publication number
JP2009260340A5
JP2009260340A5 JP2009092899A JP2009092899A JP2009260340A5 JP 2009260340 A5 JP2009260340 A5 JP 2009260340A5 JP 2009092899 A JP2009092899 A JP 2009092899A JP 2009092899 A JP2009092899 A JP 2009092899A JP 2009260340 A5 JP2009260340 A5 JP 2009260340A5
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JP
Japan
Prior art keywords
polymer
thin film
film transistor
semiconductor
semiconductor layer
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JP2009092899A
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English (en)
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JP5124520B2 (ja
JP2009260340A (ja
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Priority claimed from US12/101,945 external-priority patent/US8049209B2/en
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Publication of JP2009260340A publication Critical patent/JP2009260340A/ja
Publication of JP2009260340A5 publication Critical patent/JP2009260340A5/ja
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Claims (4)

  1. 改善された移動度と可撓性とを有する薄膜トランジスタであって、
    ゲート誘電体層と半導体層とを含み、前記半導体層が半導体ポリマーおよび絶縁ポリマーを含み、
    前記半導体ポリマーが、下記ポリマーＡ〜Ｃからなる群から選択される、薄膜トランジスタ。



    （式中、ＲおよびＲ’は、水素、炭素数１〜２０のアルキルまたは置換アルキル、ヘテロ原子含有基、およびハロゲンから独立に選択され、ｎは３〜２００の整数である。）
  2. 前記絶縁ポリマーは、ポリスチレン、ポリ（α−メチルスチレン）、ポリ（４−ビニルビフェニル）、ポリ（ビニルシンナメート）、およびポリシロキサンからなる群より選択される、請求項１に記載の薄膜トランジスタ。
  3. −１０Ｖ以上のしきい値電圧を有する、請求項１又は請求項２に記載の薄膜トランジスタ。
  4. 改善された可撓性と移動度とを有する薄膜トランジスタであって、
    ゲート誘電体層と、実質的に均質な半導体層とを含み、前記半導体層が半導体ポリマーおよび絶縁ポリマーを含み、
    前記半導体ポリマーは、下記ポリマーＡの構造を有し、前記絶縁ポリマーは、分子量１００，０００ｇ／ｍｏｌ以上のポリスチレンである、薄膜トランジスタ。


    （式中、ＲおよびＲ’は、水素、炭素数１〜２０のアルキルまたは置換アルキル、ヘテロ原子含有基、およびハロゲンから独立に選択され、ｎは３〜２００の整数である。）
JP2009092899A 2008-04-11 2009-04-07 薄膜トランジスタ Active JP5124520B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/101,945 US8049209B2 (en) 2008-04-11 2008-04-11 Thin-film transistors
US12/101,945 2008-04-11

Publications (3)

Publication Number Publication Date
JP2009260340A JP2009260340A (ja) 2009-11-05
JP2009260340A5 true JP2009260340A5 (ja) 2012-05-24
JP5124520B2 JP5124520B2 (ja) 2013-01-23

Family

ID=40679333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009092899A Active JP5124520B2 (ja) 2008-04-11 2009-04-07 薄膜トランジスタ

Country Status (3)

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US (2) US8049209B2 (ja)
EP (1) EP2109161B1 (ja)
JP (1) JP5124520B2 (ja)

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US8115200B2 (en) 2007-12-13 2012-02-14 E.I. Du Pont De Nemours And Company Electroactive materials
US8212239B2 (en) 2007-12-13 2012-07-03 E I Du Pont De Nemours And Company Electroactive materials
US8216753B2 (en) 2007-12-13 2012-07-10 E I Du Pont De Nemours And Company Electroactive materials
US8461291B2 (en) * 2007-12-17 2013-06-11 E I Du Pont De Nemours And Company Organic electroactive materials and an organic electronic device having an electroactive layer utilizing the same material
US8067764B2 (en) * 2007-12-17 2011-11-29 E. I. Du Pont De Nemours And Company Electroactive materials
US8304512B2 (en) * 2010-01-19 2012-11-06 Xerox Corporation Benzodithiophene based materials compositions
US8643001B2 (en) * 2010-12-23 2014-02-04 Samsung Electronics Co. Ltd. Semiconductor composition
US8742403B2 (en) 2011-03-08 2014-06-03 Samsung Electronics Co., Ltd. Xanthene based semiconductor compositions
WO2012156500A1 (en) * 2011-05-18 2012-11-22 Université Libre de Bruxelles Semiconducting compound for gas sensing
US9590178B2 (en) * 2011-09-28 2017-03-07 Merck Patent Gmbh Conjugated polymers
US9881712B2 (en) * 2012-07-20 2018-01-30 Rohm And Haas Electronic Materials Llc Highly crystalline electrically conducting polymers, methods of manufacture thereof and articles comprising the same
WO2014094965A2 (de) * 2012-12-18 2014-06-26 Merck Patent Gmbh Emitter mit kondensiertem ringsystem
CN103151461A (zh) 2013-02-27 2013-06-12 京东方科技集团股份有限公司 一种有机薄膜晶体管及其制备方法和制备装置
US10600964B2 (en) 2013-12-17 2020-03-24 Rohm And Haas Electronic Materials Llc Highly crystalline electrically conducting organic materials, methods of manufacture thereof and articles comprising the same
KR102409794B1 (ko) * 2014-09-25 2022-06-17 주식회사 클랩 광-가교성 유전체로서의 에테르계 중합체
JP6562398B2 (ja) * 2015-03-19 2019-08-21 三菱ケミカル株式会社 半導体デバイス、太陽電池、太陽電池モジュール、及び組成物
WO2017159703A1 (ja) * 2016-03-16 2017-09-21 富士フイルム株式会社 有機半導体組成物、有機薄膜トランジスタの製造方法、及び有機薄膜トランジスタ
EP3665729B1 (en) * 2017-08-11 2021-07-07 Raynergy Tek Inc. Organic semiconducting polymer
GB2569637A (en) * 2017-12-21 2019-06-26 Sumitomo Chemical Co Electronic device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030227014A1 (en) * 2002-06-11 2003-12-11 Xerox Corporation. Process for forming semiconductor layer of micro-and nano-electronic devices
WO2005049695A1 (en) * 2003-10-28 2005-06-02 Ciba Specialty Chemicals Holding Inc. Novel diketopyrrolopyrrole polymers
US7300861B2 (en) * 2004-06-24 2007-11-27 Palo Alto Research Center Incorporated Method for interconnecting electronic components using a blend solution to form a conducting layer and an insulating layer
EP1794218B1 (de) * 2004-10-01 2020-05-13 Merck Patent GmbH Elektronische vorrichtungen enthaltend organische halbleiter
KR101130404B1 (ko) * 2005-02-16 2012-03-27 삼성전자주식회사 고차가지형 고분자에 분산된 고유전율 절연체를 포함하는유기 절연체 조성물 및 이를 이용한 유기박막 트랜지스터
CN100443483C (zh) 2005-12-08 2008-12-17 中国科学院长春应用化学研究所 稠环单元封端的齐聚噻吩类高迁移率有机半导体材料及用途
JP5121355B2 (ja) * 2006-08-25 2013-01-16 住友化学株式会社 有機薄膜の製造方法

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