JP2009260075A - Light-emitting apparatus and lead frame - Google Patents

Light-emitting apparatus and lead frame Download PDF

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JP2009260075A
JP2009260075A JP2008108089A JP2008108089A JP2009260075A JP 2009260075 A JP2009260075 A JP 2009260075A JP 2008108089 A JP2008108089 A JP 2008108089A JP 2008108089 A JP2008108089 A JP 2008108089A JP 2009260075 A JP2009260075 A JP 2009260075A
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light
side wall
emitting device
electrode
light emitting
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Inventor
Kenji Naito
健二 内藤
Toshihide Fujii
敏秀 藤井
Kengo Yagi
研吾 八木
Yutaka Onishi
豊 大西
Junichi Kimiya
淳一 木宮
Koji Nishimura
孝司 西村
Masaru Nikaido
勝 二階堂
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Toshiba Corp
Toshiba Development and Engineering Corp
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Toshiba Corp
Toshiba Electronic Engineering Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting apparatus capable of being compact and increasing the light extraction efficiency; and to provide a lead frame used for production of the light-emitting apparatus. <P>SOLUTION: The light-emitting apparatus comprises a pair of electrodes 16a and 16b comprising a metal, a light source 20 connected to the pair of electrodes, and sidewall portions 22a and 22b comprising the metal and standing around the light irradiation direction of the light source. The sidewall portions are connected to at least one of the electrodes. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、携帯電話機のフラッシュランプや液晶表示装置のバックライトとして用いられる発光装置、および発光装置の製造に用いるリードフレームに関する。   The present invention relates to a light emitting device used as a flash lamp of a mobile phone or a backlight of a liquid crystal display device, and a lead frame used for manufacturing the light emitting device.

近年、発光ダイオード（ＬＥＤ）等の半導体発光素子を備えた高出力で小型の発光装置が開発され、安価で長寿命な発光装置として注目されている。このような発光装置は、小型、低消費電力、軽量等の特徴を生かして、例えば、携帯電話機のフラッシュランプ、液晶表示装置のバックライトの光源等に用いられている。   In recent years, high-power and small-sized light-emitting devices including semiconductor light-emitting elements such as light-emitting diodes (LEDs) have been developed, and are attracting attention as light-emitting devices that are inexpensive and have a long lifetime. Such a light emitting device is used for, for example, a flash lamp of a mobile phone, a light source of a backlight of a liquid crystal display device, etc., taking advantage of the features such as small size, low power consumption, and light weight.

この種の発光装置は、一対の電極上に実装された発光素子と、光放出用の開口を除いて発光素子の周囲を覆った外囲器と、を有している。この外囲器は、合成樹脂により電極上に成形されている。   This type of light-emitting device has a light-emitting element mounted on a pair of electrodes and an envelope that covers the periphery of the light-emitting element except for a light emission opening. The envelope is molded on the electrode with a synthetic resin.

例えば、バックライトの光源として用いられる発光装置は、機器の小型化および軽量化に伴い、小型化および薄型化が求められている。発光装置の小型化、主に高さ方向の薄型化を図るため、樹脂で形成された外囲器自体の薄型化が図られている（例えば、特許文献１および２）。
特開２００７−３１１７３６号公報 特開２００７−２８０９８３号公報 For example, a light emitting device used as a light source of a backlight is required to be reduced in size and thickness as the device is reduced in size and weight. In order to reduce the size of the light emitting device, mainly to reduce the thickness in the height direction, the envelope itself made of resin has been reduced in thickness (for example, Patent Documents 1 and 2).
JP 2007-311736 A JP 2007-280983 A

上記のような発光装置において、外囲器の内面は、発光素子から放出された光を反射する反射面となるが、外囲器が合成樹脂により形成されている場合、反射率が低く、光の取出し効率が悪い。また、発光装置の薄型化により、樹脂からなる外囲器の壁部は極力薄く形成されている。そのため、発光素子から放出された光が外囲器を通して外部に漏れてしまう場合があり、光の取出し効率が低下する。   In the light emitting device as described above, the inner surface of the envelope serves as a reflective surface that reflects the light emitted from the light emitting element. However, when the envelope is formed of synthetic resin, the reflectance is low, and the light The extraction efficiency is poor. In addition, the wall of the envelope made of resin is formed as thin as possible by making the light emitting device thinner. Therefore, the light emitted from the light emitting element may leak to the outside through the envelope, and the light extraction efficiency decreases.

これらの問題を解決するため、樹脂表面にメッキや蒸着などの表面処理を施す方法が考えられるが、樹脂へのメッキは困難であるとともに、発光装置を基板へ実装する際、はんだリフローの熱によりメッキがはがれたてしまう問題がある。   In order to solve these problems, a method of performing surface treatment such as plating or vapor deposition on the resin surface can be considered, but plating on the resin is difficult, and when mounting the light emitting device on the board, it is caused by the heat of solder reflow There is a problem that the plating is peeled off.

この発明は以上の点に鑑みなされたもので、その目的は、小型化が可能であるとともに、光の取出し効率の向上を図ることができる発光装置、および発光装置の製造に用いるリードフレームを提供することにある。   The present invention has been made in view of the above points, and an object of the present invention is to provide a light-emitting device that can be reduced in size and can improve light extraction efficiency, and a lead frame used for manufacturing the light-emitting device. There is to do.

上記課題を達成するため、この発明の態様に係る発光装置は、金属で形成された一対の電極部と、前記一対の電極部に接続された光源と、金属で形成され、前記光源の光照射方向の周囲を囲んで起立する側壁部と、を備え、前記側壁部は、前記少なくとも一方の電極部に接続されている発光装置。   In order to achieve the above object, a light-emitting device according to an aspect of the present invention includes a pair of electrode portions formed of metal, a light source connected to the pair of electrode portions, and a light irradiation of the light source formed of metal. And a side wall portion standing around the periphery of the direction, wherein the side wall portion is connected to the at least one electrode portion.

この発明の他の態様に係るリードフレームは、金属で形成された一対の電極部と、前記一対の電極部に接続された光源と、金属で形成され、前記光源の光照射方向の周囲を囲んで起立する側壁部と、を備え、前記側壁部は、前記少なくとも一方の電極部に接続されている発光装置の製造に用いるリードフレームであって、前記一対の電極部および側壁部を形成する金属部を一体に備えている。   A lead frame according to another aspect of the present invention includes a pair of electrode portions made of metal, a light source connected to the pair of electrode portions, and a metal that surrounds the light source in the light irradiation direction. And a side frame that is a lead frame used in manufacturing a light-emitting device connected to the at least one electrode unit, the metal forming the pair of electrode units and the side wall unit. The unit is integrated.

以上構成によれば、小型化が可能で、光の取出し効率が向上した発光装置、および発光装置の製造に用いるリードフレームを提供することができる。   According to the above configuration, it is possible to provide a light emitting device that can be reduced in size and improved in light extraction efficiency, and a lead frame used for manufacturing the light emitting device.

以下、図面を参照しながら、この発明の実施形態に係る発光装置およびリードフレームについて詳細に説明する。
図１は、第１の実施形態に係る発光装置全体を示す斜視図、図２、図３はそれぞれ発光装置の異なる断面を示し、図４および図５は、発光装置の外囲器を省略して金属構成部分を示している。 Hereinafter, a light emitting device and a lead frame according to an embodiment of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a perspective view showing the entire light emitting device according to the first embodiment, FIGS. 2 and 3 show different sections of the light emitting device, and FIGS. 4 and 5 omit the envelope of the light emitting device. The metal components are shown.

図１ないし図５に示すように、発光装置１０は、光源として、発光素子である発光ダイオード（ＬＥＤ）を備えたサイドビュー型として構成されている。発光装置１０は、例えば、銅からなる金属板を加工して形成された金属部材１２と、金属部材の周囲を被覆しているとともに金属部材を支持した樹脂からなる外囲器１４と、を有している。   As shown in FIGS. 1 to 5, the light emitting device 10 is configured as a side view type including a light emitting diode (LED) as a light emitting element as a light source. The light emitting device 10 includes, for example, a metal member 12 formed by processing a metal plate made of copper, and an envelope 14 made of resin that covers the periphery of the metal member and supports the metal member. is doing.

金属部材１２は、正極および負極からなる一対の電極部１６ａ、１６ｂを有し、これらの電極部１６ａ、１６ｂは、細長い平坦な板状に形成され、互いに隙間を置いて直線状に配列されている。ＬＥＤ２０は、例えば、銀ペースト等の接着剤により負極側の電極部１６ｂ上に固定され電極部１６ｂに導通しているとともに、ボンディングワイヤ２１により、電極部１６ａに電気的に接続されている。ＬＥＤ２０は、光を放射する出射面２０ａを有し、この出射面２０ａが電極部１６ａ、１６ｂと平行に位置した状態で、かつ、出射面が電極部と反対側を向いた状態で、配置されている。   The metal member 12 has a pair of electrode portions 16a and 16b composed of a positive electrode and a negative electrode. The electrode portions 16a and 16b are formed in an elongated flat plate shape, and are arranged in a straight line with a gap therebetween. Yes. The LED 20 is fixed on the electrode portion 16b on the negative electrode side by an adhesive such as silver paste and is electrically connected to the electrode portion 16b, and is electrically connected to the electrode portion 16a by a bonding wire 21. The LED 20 has an emission surface 20a that emits light, and is arranged with the emission surface 20a positioned parallel to the electrode portions 16a and 16b and with the emission surface facing away from the electrode portions. ing.

金属部材１２は、ＬＥＤ２０の光照射方向Ｃの周囲を囲むように起立して設けられた一対の側壁部２２ａ、２２ｂを有している。側壁部２２ａ、２２ｂは、それぞれ平坦な板状に形成され、電極部１６ａ、１６ｂの両側に配置され互いに対向している。側壁部２２ａ、２２ｂは、その両端部が、それぞれ電極部１６ａ、１６ｂの延出方向とほぼ直交する方向に折曲げられ、全体として、ほぼ細長い角筒形状に形成されている。更に、側壁部２２ａ、２２ｂは、ＬＥＤ２０の出射面２０ａと直交する方向Ｃに対して、外側に傾斜して延びている。すなわち、側壁部２２ａ、２２ｂは、電極部１６ａ、１６ｂ側から徐々に内径が広がるように、傾斜して延びている。そして、側壁部２２ａ、２２ｂの電極部１６ａ、１６ｂと反対側の端は、光を放出するほぼ矩形状の照射開口２４を規定している。   The metal member 12 has a pair of side wall portions 22 a and 22 b that are provided upright so as to surround the periphery of the LED 20 in the light irradiation direction C. The side wall portions 22a and 22b are each formed in a flat plate shape, are disposed on both sides of the electrode portions 16a and 16b, and face each other. The side walls 22a and 22b are bent at both ends in a direction substantially perpendicular to the extending direction of the electrode portions 16a and 16b, respectively, and are formed in a substantially elongated rectangular tube shape as a whole. Furthermore, the side wall portions 22a and 22b are inclined and extended outward with respect to the direction C orthogonal to the emission surface 20a of the LED 20. That is, the side wall portions 22a and 22b are inclined and extended so that the inner diameter gradually increases from the electrode portions 16a and 16b side. The ends of the side wall portions 22a and 22b opposite to the electrode portions 16a and 16b define a substantially rectangular irradiation opening 24 that emits light.

側壁部２２ａ、２２ｂは金属で形成されていることから、光を反射する反射部材として機能し、各側壁部の内面は、ＬＥＤ２０から射出される光の少なくとも一部、および後述する波長変換部材から出射される光の少なくとも一部を反射する反射面２３を形成している。各側壁部の内面に、反射率の高い材料、例えば、Ａｇ、Ａｌの少なくとも一方を主成分とする材料をメッキあるいは蒸着し、より高い反射率の高い、つまり、光取出し効率の高い反射面２３を形成してもよい。   Since the side wall portions 22a and 22b are made of metal, the side wall portions 22a and 22b function as reflecting members that reflect light, and the inner surface of each side wall portion is formed from at least part of the light emitted from the LED 20 and a wavelength conversion member described later. A reflection surface 23 that reflects at least a part of the emitted light is formed. A highly reflective material, for example, a material mainly composed of at least one of Ag and Al, is plated or vapor-deposited on the inner surface of each side wall, so that the reflective surface 23 having a higher reflectance, that is, a higher light extraction efficiency. May be formed.

側壁部２２ａは、金属からなるつなぎ部２６ａにより電極部１６ａ、１６ｂに接続され、また、側壁部２２ｂは、金属からなるつなぎ部２６ｂにより他方の電極部１６ｂに接続されている。また、金属部材１２は、電極部１６ａ、１６ｂからそれぞれ延出した外部取出し電極２８ａ、２８ｂを有している。外部取出し電極２８ａ、２８ｂは、一方の側壁部２２ａの外側に、この側壁部と隙間を置いて対向配置されている。   The side wall portion 22a is connected to the electrode portions 16a and 16b by a connecting portion 26a made of metal, and the side wall portion 22b is connected to the other electrode portion 16b by a connecting portion 26b made of metal. Further, the metal member 12 includes external extraction electrodes 28a and 28b extending from the electrode portions 16a and 16b, respectively. The external extraction electrodes 28a and 28b are arranged on the outer side of the one side wall portion 22a so as to face the side wall portion with a gap.

このように、電極部１６ａ、つなぎ部２６ａ、側壁部２２ａ、および外部取出し電極２８ａは、共通の金属板により一体に形成され、また、電極部１６ｂ、つなぎ部２６ｂ、側壁部２２ｂ、および外部取出し電極２８ｂは、共通の金属板により一体に形成されている。
図１ないし図３に示すように、外部取出し電極２８ａ、２８ｂおよび照射開口２４を除いて、金属部材１２の外面側および周囲は、樹脂からなる外囲器１４によって被覆されている。これにより、金属部材１２の各構成部分は外囲器１４によって固定および支持されている。外部取出し電極２８ａ、２８ｂは、外囲器１４の一側面側に露出して位置している。 Thus, the electrode portion 16a, the connecting portion 26a, the side wall portion 22a, and the external extraction electrode 28a are integrally formed of a common metal plate, and the electrode portion 16b, the connecting portion 26b, the side wall portion 22b, and the external extraction electrode The electrode 28b is integrally formed of a common metal plate.
As shown in FIGS. 1 to 3, the outer surface side and the periphery of the metal member 12 are covered with an envelope 14 made of resin except for the external extraction electrodes 28 a and 28 b and the irradiation opening 24. Thereby, each component of the metal member 12 is fixed and supported by the envelope 14. The external extraction electrodes 28 a and 28 b are located so as to be exposed on one side of the envelope 14.

金属部材１２の内側、ここでは、側壁部２２ａ、２２ｂの内側には、ＬＥＤ２０および電極部１６ａ、１６ｂに重ねて、シリコーン樹脂等の封止体３０が充填されている。封止体３０内には、波長変換部材として機能する粒子状の蛍光体３２が分散されている。ＬＥＤ２０から射出される第１波長領域を含む励起光は、発光ピーク波長が４００ｎｍ以下の紫外領域を主として構成されている。蛍光体３２としては、４００ｎｍ以下の一次光により励起される蛍光体を用いる。蛍光体３２は、ＬＥＤ２０から射出された第１波長領域を含む励起光の少なくとも一部を吸収して、第２波長領域の光を射出する。第２波長領域の光は、主として４００〜７００ｎｍの一部を含む可視波長領域の光を含んでいる。
蛍光体は１種類のもののみを用いてもよいが、複数種類の蛍光体を組み合わせて用いても良い。 Inside the metal member 12, here, inside the side wall portions 22a and 22b, a sealing body 30 such as silicone resin is filled so as to overlap the LED 20 and the electrode portions 16a and 16b. In the sealing body 30, particulate phosphors 32 that function as wavelength conversion members are dispersed. The excitation light including the first wavelength region emitted from the LED 20 mainly includes an ultraviolet region having an emission peak wavelength of 400 nm or less. As the phosphor 32, a phosphor excited by primary light of 400 nm or less is used. The phosphor 32 absorbs at least a part of the excitation light including the first wavelength region emitted from the LED 20 and emits light in the second wavelength region. The light in the second wavelength region mainly includes light in the visible wavelength region including a part of 400 to 700 nm.
Only one type of phosphor may be used, but a plurality of types of phosphors may be used in combination.

次に、以上のように構成された発光装置１０の製造方法について説明する。
図６は、発光装置の製造に用いるリードフレームを示し、図７は、リードフレームの１ユニットを拡大して示している。 Next, a method for manufacturing the light emitting device 10 configured as described above will be described.
FIG. 6 shows a lead frame used for manufacturing the light emitting device, and FIG. 7 shows an enlarged view of one unit of the lead frame.

図６および図７に示すように、リードフレーム４０は、例えば、板厚０．０１〜０．１ｍｍの銅あるいは鉄系素材（Fe-42%Ni）等からなる薄い金属板をプレスによって打ち抜くことにより、あるいはエッチングにより形成されている。高い光の取出し効率を必要とする場合は、予めＡｇなど反射率の高い材料を所定位置にメッキあるいは蒸着し、反射面を形成しておく。リードフレーム４０を必要形状に打ち抜き、あるいは、エッチングにより、電極部、外部取出し電極、側壁部を形成する。側壁部は、リードフレーム本体とつなぎ部でつながっている。   As shown in FIGS. 6 and 7, the lead frame 40 is formed by punching out a thin metal plate made of copper or iron-based material (Fe-42% Ni) having a thickness of 0.01 to 0.1 mm, for example. Or by etching. When high light extraction efficiency is required, a reflective surface is formed in advance by plating or evaporating a highly reflective material such as Ag at a predetermined position. The lead frame 40 is punched into a required shape, or an electrode part, an external extraction electrode, and a side wall part are formed by etching. The side wall portion is connected to the lead frame main body by a connecting portion.

すなわち、リードフレーム４０は、互いに隙間を置いて平行に延びた一対のフレーム部４２と、リードフレームの長手方向に一定の間隔を置いて設けられ、フレーム部間を連結している複数のブリッジ部４４と、隣り合うブリッジ部間、およびフレーム部間に形成された複数のリードユニット４６と、を有し、例えば、銅板により一体にプレス成形されている。各フレーム部４２には、長手方向に一定の間隔をおいて、複数の送り孔４５が形成されている。複数のリードユニット４６は、リードフレーム４０の長手方向に沿って、２列に並んで形成されている。   That is, the lead frame 40 includes a pair of frame portions 42 that extend in parallel with a gap between each other, and a plurality of bridge portions that are provided at regular intervals in the longitudinal direction of the lead frame and connect the frame portions. 44 and a plurality of lead units 46 formed between adjacent bridge portions and between frame portions, and are integrally press-formed with a copper plate, for example. Each frame portion 42 is formed with a plurality of feed holes 45 at regular intervals in the longitudinal direction. The plurality of lead units 46 are formed in two rows along the longitudinal direction of the lead frame 40.

各リードユニット４６は、一方のブリッジ部４４から延出したリードにより形成された電極部１６ａ、外部取出し電極２８ａ、つなぎ部２６ａ、および側壁部２２ａと、他方のブリッジ部４４から延出したリードにより形成された電極部１６ｂ、外部取出し電極２８ｂ、つなぎ部２６ｂ、および側壁部２２ｂと、を有し、これらは、フレーム部４２と面一の平坦な金属板により形成されている。   Each lead unit 46 includes an electrode portion 16 a formed by a lead extending from one bridge portion 44, an external extraction electrode 28 a, a connecting portion 26 a, a side wall portion 22 a, and a lead extending from the other bridge portion 44. The formed electrode portion 16b, the external extraction electrode 28b, the connecting portion 26b, and the side wall portion 22b are formed by a flat metal plate that is flush with the frame portion 42.

発光装置１０を製造する場合、まず、図８に示すように、リードフレーム４０の各リードユニット４６における一対の側壁部２２ａ、２２ｂを曲げ起こし、同時に、必要な反射面形状となるように成形する。続いて、一対の外部取出し電極２８ａ、２８ｂを曲げ起こし、外部取出し電極を基板に実装できる形に成形する。   When manufacturing the light emitting device 10, first, as shown in FIG. 8, the pair of side wall portions 22 a and 22 b in each lead unit 46 of the lead frame 40 is bent and simultaneously formed so as to have a necessary reflecting surface shape. . Subsequently, the pair of external extraction electrodes 28a and 28b are bent and formed so that the external extraction electrodes can be mounted on the substrate.

次いで、図９および図１０に示すように、樹脂インサートモールドにより、各リードユニット４６に外囲器１４を成形する。その後、電極部１６ｂ上に発光素子を実装し、かつ、ボンディングワイヤにより他方の電極部１６ａに接続する。更に、蛍光体が分散された封止体、例えば、シリコーン樹脂を発光素子に重ねてリードユニット４６内に充填する。以後、リードユニット４６をブリッジ部４４から切り離すことにより、発光装置１０が得られる。   Next, as shown in FIGS. 9 and 10, the envelope 14 is formed on each lead unit 46 by resin insert molding. Thereafter, the light emitting element is mounted on the electrode portion 16b and connected to the other electrode portion 16a by a bonding wire. Further, a sealing body in which a phosphor is dispersed, for example, a silicone resin is stacked on the light emitting element and filled in the lead unit 46. Thereafter, the light emitting device 10 is obtained by separating the lead unit 46 from the bridge portion 44.

上記のように構成された発光装置１０は、外部取出し電極２８ａ、２８ｂが露出している側の側壁が例えば、プリント回路基板上に実装され、外部取出し電極２８ａ、２８ｂが電源等に電気的に接続される。そして、外部取出し電極２８ａ、２８ｂ、電極部１６ａ、１６ｂおよびボンディングワイヤ２１を介してＬＥＤ２０に通電されると、ＬＥＤ２０は主として紫外線領域の波長を含む光を出射する。この光により、蛍光体３２が励起され、主として可視領域の波長を含む光を出射する。   In the light emitting device 10 configured as described above, the side wall on the side where the external extraction electrodes 28a and 28b are exposed is mounted on, for example, a printed circuit board, and the external extraction electrodes 28a and 28b are electrically connected to a power source or the like. Connected. When the LED 20 is energized through the external extraction electrodes 28a and 28b, the electrode portions 16a and 16b, and the bonding wire 21, the LED 20 emits light mainly including a wavelength in the ultraviolet region. The phosphor 32 is excited by this light, and emits light mainly including wavelengths in the visible region.

これらの光は、発光装置１０の照射開口２４からプリント回路基板とほぼ平行な方向に沿って出射される。また、ＬＥＤ２０から射出される第１波長領域の光の一部、および蛍光体３２から射出される第２波長領域の光の一部は、側壁部２２ａ、２２ｂの反射面２３によって光取出し方向に反射され、つまり、照射開口２４側に反射され、この照射開口から外部に出射される。   These lights are emitted from the irradiation opening 24 of the light emitting device 10 along a direction substantially parallel to the printed circuit board. Further, a part of the light in the first wavelength region emitted from the LED 20 and a part of the light in the second wavelength region emitted from the phosphor 32 are caused in the light extraction direction by the reflecting surfaces 23 of the side wall portions 22a and 22b. It is reflected, that is, reflected to the irradiation opening 24 side, and emitted from the irradiation opening to the outside.

このように、側壁部２２ａ、２２ｂは金属板で形成され、高い反射率を有していることから、ＬＥＤ２０および蛍光体３２から出射された光の一部を照射開口に向けて反射することができる。同時に、側壁部２２ａ、２２ｂは、発光装置の薄型化を図る目的で、側壁部自体および外囲器１４を薄く形成した場合でも、光の透過を遮蔽し、光漏れを抑制することができる。これにより、発光装置としての光取出し効率を上げることができる。   Thus, since the side walls 22a and 22b are formed of metal plates and have a high reflectance, a part of the light emitted from the LED 20 and the phosphor 32 can be reflected toward the irradiation opening. it can. At the same time, the side wall portions 22a and 22b can block light transmission and suppress light leakage even when the side wall portion and the envelope 14 are formed thin for the purpose of reducing the thickness of the light emitting device. Thereby, the light extraction efficiency as a light-emitting device can be raised.

ＬＥＤ２０に接続されている電極部１６ａ、１６ｂと、光照射方向に起立している金属の側壁部２２ａ、２２ｂと、を接続することにより、ＬＥＤから発生する熱を、電極部および側壁部により効率的に放熱させることができ、ＬＥＤの光照射能力を長期間保持することが可能となる。つまり、ＬＥＤ２０は、温度が上がると発光効率が落ちることが知られているが、本発光装置によれば、ＬＥＤの温度上昇を抑制し、光照射能力を維持することができる。   By connecting the electrode portions 16a and 16b connected to the LED 20 and the metal side wall portions 22a and 22b erected in the light irradiation direction, heat generated from the LED is more efficiently generated by the electrode portions and the side wall portions. Heat can be radiated, and the light irradiation ability of the LED can be maintained for a long period of time. That is, although it is known that the light emission efficiency of the LED 20 decreases as the temperature rises, according to the present light emitting device, the temperature increase of the LED can be suppressed and the light irradiation ability can be maintained.

電極部および金属の側壁部を接続する構成とすることにより、構造体としての機械的強度を上げることができ、発光装置製造時のハンドリング性を良好にすると共に、構造体の製造時の破壊による歩留まり低下を防ぐことができる。   By connecting the electrode portion and the metal side wall portion, the mechanical strength of the structure can be increased, the handling property at the time of manufacturing the light emitting device is improved, and the structure is destroyed at the time of manufacturing. Yield reduction can be prevented.

ＬＥＤに重ねて蛍光体３２を配置することにより、ＬＥＤから射出できる波長とは異なる波長領域の光を取り出すことが可能となり、発光装置を広範囲な用途として使用できるようになる。例えば、ＬＥＤとしては紫外領域の波長を含む青色を発光させ、紫外光を黄色の蛍光体（波長変換部材）に照射させることにより波長領域を広げた照射光としたり、紫外領域の光を用いて、赤、青、緑などの３色蛍光体に照射励起することによりそれぞれの波長の光を取り出すことができ、例えばテレビなどにも活用することができる。更に、発光素子の種類を１種類とした場合でも、あらゆる光の波長を取り出すことができ、製造コストを抑制することが可能となる。   By arranging the phosphor 32 so as to overlap the LED, light in a wavelength region different from the wavelength that can be emitted from the LED can be extracted, and the light-emitting device can be used for a wide range of applications. For example, the LED emits blue light having a wavelength in the ultraviolet region, and irradiates ultraviolet light with a yellow phosphor (wavelength conversion member) to make the irradiation light wide in the wavelength region, or uses light in the ultraviolet region. By irradiating and exciting three-color phosphors such as red, blue, and green, light of each wavelength can be taken out, and can be used for a television, for example. Furthermore, even when the type of the light emitting element is one, all light wavelengths can be extracted, and the manufacturing cost can be suppressed.

金属で形成された側壁部の反射面を、Ａｇ、Ａｌなどの反射率の高い材料で形成することにより、製造コストを抑制しながら、所望の光照射方向への光取出し効率を更に上げることができるようになる。   By forming the reflective surface of the side wall made of metal with a material having high reflectivity such as Ag and Al, it is possible to further increase the light extraction efficiency in the desired light irradiation direction while suppressing the manufacturing cost. become able to.

すなわち、このような構成とすることにより、側壁部の主成分を例えばＳＵＳ、りん青銅等のあまり反射率の高くない、低コストながら強度、光透過抑制性を有する材料とし、表面の反射面のみを高価であるが、第１１図に示すように反射率の高いＡｇなどを使うことができる。また、Ａｌなどは、反射率は高いが、柔らかい材料の為、側壁部全体を構成するには強度不足となる。そのため、側壁部の主要部をＳＵＳ等の強度の高い材料で形成し、反射面のみをＡｌで構成することが望ましい。   That is, by adopting such a configuration, the main component of the side wall portion is made of, for example, SUS, phosphor bronze, or the like, which has a low reflectance and a material having strength and light transmission suppression properties, and has only a reflective surface. Is expensive, but Ag or the like having high reflectivity can be used as shown in FIG. Further, Al or the like has a high reflectance, but it is a soft material, so that the strength is insufficient to constitute the entire side wall. Therefore, it is desirable that the main part of the side wall part is formed of a material having high strength such as SUS and that only the reflecting surface is made of Al.

金属部材１２の外側および周囲を合成樹脂からなる外囲器１４で覆うことにより、一対の電極部１６ａ、１６ｂと、これに接続された側壁部２２ａ、２２ｂと、を強固に固定することができる。また、電極部や側壁部の隙間を樹脂で埋めることができ、ＬＥＤ２０や蛍光体３２で発生させた光を、不所望の方向に漏らすことなく、所望の光照射方向に取出すことができる。   By covering the outside and the periphery of the metal member 12 with the envelope 14 made of synthetic resin, the pair of electrode portions 16a and 16b and the side wall portions 22a and 22b connected thereto can be firmly fixed. . Further, the gap between the electrode part and the side wall part can be filled with resin, and the light generated by the LED 20 and the phosphor 32 can be taken out in a desired light irradiation direction without leaking in an undesired direction.

また、前述したリードフレームを用いて発光装置を製造することにより、平板から電極面と反射面を形成でき、絞り加工を行う場合等に比較して製造コストの面で有利となる。リードフレーム上でプレス、成型、加工などが行え、製造が簡単に行える。反射板となる側壁部の傾斜角度を容易に変更することができる。   Further, by manufacturing the light emitting device using the lead frame described above, the electrode surface and the reflecting surface can be formed from a flat plate, which is advantageous in terms of manufacturing cost compared to the case of performing drawing processing. The lead frame can be pressed, molded, processed, etc., making it easy to manufacture. The inclination angle of the side wall portion serving as the reflector can be easily changed.

以上のことから、小型化が可能で、光の取出し効率が向上した発光装置、および発光装置の製造に用いるリードフレームが得られる。   From the above, it is possible to obtain a light emitting device that can be reduced in size and improved in light extraction efficiency, and a lead frame used for manufacturing the light emitting device.

上述した第１の実施形態において、金属部材１２は、それぞれ電極部に接続された一対の側壁部を有する構成としたが、これに限らず、図１２に示す第２の実施形態のように、一方の電極部１６ｂのみに接続された１つの側壁部２２を曲げ加工して、ＬＥＤ２０の周囲を囲うように形成してもよい。このような構成とすることにより、ＬＥＤから発生する熱をより効果的に放熱することができる。   In the first embodiment described above, the metal member 12 has a pair of side wall portions connected to the electrode portions. However, the present invention is not limited to this, as in the second embodiment shown in FIG. One side wall portion 22 connected only to one electrode portion 16b may be bent so as to surround the periphery of the LED 20. By setting it as such a structure, the heat which generate | occur | produces from LED can be thermally radiated more effectively.

上述した実施形態では、サイドビュー型の発光装置について説明したが、これに限らず、図１３および図１４に示す第３の実施形態のように、立位型の発光装置としてもよい。すなわち、この発光装置によれば、金属部材１２は、正極、負極の一対の電極部１６ａ、１６ｂと、つなぎ部２６ａ、２６ｂをそれぞれ介して電極部１６ａ、１６ｂに接続された一対の側壁部２２ａ、２２ｂと、を有している。一対の側壁部２２ａ、２２ｂは、それぞれ円弧状に形成され、発光素子２０からの光の照射方向を囲むように立位状態で配置されている。側壁部２２ａ、２２ｂは、ほぼ切頭円錐状に形成され、発光素子２０側から外側に向かって徐々に径が大きくなるように傾斜している。各側壁部２２ａ、２２ｂの内面は、発光素子２０から出射された光の一部、および図示しない蛍光体からの出射光の一部を反射する反射面２３を形成している。   In the above-described embodiment, the side view type light emitting device has been described. However, the present invention is not limited to this, and a standing type light emitting device may be used as in the third embodiment shown in FIGS. That is, according to this light-emitting device, the metal member 12 includes a pair of positive and negative electrode portions 16a and 16b and a pair of side wall portions 22a connected to the electrode portions 16a and 16b via the connecting portions 26a and 26b, respectively. , 22b. The pair of side wall portions 22a and 22b are each formed in an arc shape, and are disposed in a standing state so as to surround the irradiation direction of light from the light emitting element 20. The side wall portions 22a and 22b are formed in a substantially truncated cone shape, and are inclined so that the diameter gradually increases from the light emitting element 20 side toward the outside. The inner surfaces of the side wall portions 22a and 22b form a reflecting surface 23 that reflects a part of the light emitted from the light emitting element 20 and a part of the emitted light from a phosphor (not shown).

側壁部２２ａ、２２ｂの周囲および電極部１６ａ、１６ｂの下面側は、合成樹脂からなる外囲器１４により被覆されている。側壁部２２ａ、２２ｂの内側で、発光素子２０および電極部１６ａ、１６ｂ上には、図示しない蛍光体が分散された封止体が充填されている。   The periphery of the side wall portions 22a and 22b and the lower surface side of the electrode portions 16a and 16b are covered with an envelope 14 made of synthetic resin. Inside the side wall portions 22a and 22b, the light emitting element 20 and the electrode portions 16a and 16b are filled with a sealing body in which a phosphor (not shown) is dispersed.

このように構成された発光装置１０は、外囲器１４の底面側がプリント回路基板上等に載置された状態、つまり、立位状態で実装され、照射開口２４からプリント回路基板に対して垂直な方向に光を照射する。   The light emitting device 10 configured as described above is mounted in a state where the bottom surface side of the envelope 14 is placed on a printed circuit board or the like, that is, in a standing state, and is perpendicular to the printed circuit board from the irradiation opening 24. Irradiate light in any direction.

第３の実施形態において、他の構成は前述した第１の実施形態と同一であり、同一の部分には、同一の参照符号を付してその詳細な説明を省略する。第３の実施形態においても、第１の実施形態と同様の作用効果を得ることができる。   In the third embodiment, other configurations are the same as those of the first embodiment described above, and the same reference numerals are given to the same portions, and detailed description thereof is omitted. Also in the third embodiment, it is possible to obtain the same effects as those in the first embodiment.

前述した実施形態では、金属により形成された電極部と、光源からの光照射方向を囲む形で形成される側壁部とを含む構造体を、樹脂のインサート成型により接着固定する構成としたが、これに限らず、図１５に示すように、電極部の裏側から樹脂板５０を電極部および側壁部に接着剤などで固定し、この樹脂板により電極部および側壁部を支持および固定する構成としてもよい。   In the above-described embodiment, the structure including the electrode part formed of metal and the side wall part formed so as to surround the light irradiation direction from the light source is configured to be bonded and fixed by resin insert molding. Not limited to this, as shown in FIG. 15, the resin plate 50 is fixed to the electrode portion and the side wall portion with an adhesive or the like from the back side of the electrode portion, and the electrode portion and the side wall portion are supported and fixed by this resin plate. Also good.

なお、この発明は上記実施の形態そのままに限定されるものではなく、実施段階ではその要旨を逸脱しない範囲で構成要素を変形して具体化可能である。また、上記実施の形態に開示されている複数の構成要素の適宜な組み合わせにより、種々の発明を形成できる。例えば、実施形態に示される全構成要素から幾つかの構成要素を削除してもよい。さらに、異なる実施形態にわたる構成要素を適宜組み合わせてもよい。   Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the components without departing from the scope of the invention in the implementation stage. Various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the embodiments. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, constituent elements over different embodiments may be appropriately combined.

例えば、上述した実施形態において、電極部と側壁部とを共通の金属板で一体に形成する構成としたが、側壁部を別体の金属で形成し、電極部に溶接等によって電極部に連結する構成としてもよい。蛍光体を分散させた封止体は、シリコーン樹脂に限らず、例えばエポキシ系樹脂や、その他光透過性を有する樹脂を用いることができる。また、蛍光体が分散された封止体を省略し、発光素子からの出射光のみを照射する発光装置としてもよい。上述した実施形態では、リードフレームを、プレスによって打ち抜く、あるいはエッチングにより金属部を形成する構成としたが、他に、レーザーカット、ウオータージェットなどで加工してもよい。   For example, in the above-described embodiment, the electrode portion and the side wall portion are formed integrally with a common metal plate, but the side wall portion is formed of a separate metal and connected to the electrode portion by welding or the like. It is good also as composition to do. The sealing body in which the phosphor is dispersed is not limited to a silicone resin, and for example, an epoxy resin or other light transmissive resin can be used. Alternatively, a sealing body in which the phosphor is dispersed may be omitted, and a light emitting device that irradiates only light emitted from the light emitting element may be used. In the above-described embodiment, the lead frame is punched out by pressing or the metal part is formed by etching. However, the lead frame may be processed by laser cutting, water jet, or the like.

前述した実施形態では、電極部１６ａ、１６ｂから一つのつなぎ部を介して側壁部が延出する構成としたが、これに限らず、例えば、電極部１６ａから２つのつなぎ部を介して、対向する側壁部を形成しても、片側の側壁部を２つ以上のつなぎ部を介して形成しても良い。例えば、電極部１６ａから２つのつなぎ部を介して、対向する側壁部を形成した場合、曲げ加工時にバランスよく側壁部を曲げることができ、ねじれなどの加工不良がおきにくくすることができる。   In the above-described embodiment, the side wall portion extends from the electrode portions 16a and 16b via one connecting portion. However, the present invention is not limited to this. For example, the electrode portions 16a are opposed to each other via two connecting portions. Even if the side wall part to be formed is formed, the one side wall part may be formed via two or more connecting parts. For example, when opposing side wall portions are formed from the electrode portion 16a via two connecting portions, the side wall portions can be bent in a balanced manner during bending, and processing defects such as twisting can be made difficult to occur.

図１は、この発明の第１の実施形態に係る発光装置を示す斜視図。FIG. 1 is a perspective view showing a light emitting device according to a first embodiment of the present invention. 図２は、図１の線Ａ−Ａに沿った発光装置の断面図。FIG. 2 is a cross-sectional view of the light-emitting device along the line AA in FIG. 図３は、図１の線Ｂ−Ｂに沿った発光装置の断面図。FIG. 3 is a cross-sectional view of the light-emitting device along the line BB in FIG. 図４は、前記発光装置の外囲器を省略し、金属部材を示す斜視図。FIG. 4 is a perspective view showing a metal member, omitting the envelope of the light emitting device. 図５は、前記金属部材の平面図。FIG. 5 is a plan view of the metal member. 図６は、前記発光装置の製造に用いるリードフレームを示す斜視図。FIG. 6 is a perspective view showing a lead frame used for manufacturing the light emitting device. 図７は、前記リードフレームのリードユニットを拡大して示す平面図。FIG. 7 is an enlarged plan view showing a lead unit of the lead frame. 図８は、リードユニットを折り曲げ成形した金属部材を示す平面図。FIG. 8 is a plan view showing a metal member obtained by bending a lead unit. 図９は、前記リードフレームに樹脂製の外囲器をインサートモールドした状態を示す斜視図。FIG. 9 is a perspective view showing a state in which a resin envelope is insert-molded in the lead frame. 図１０は、外囲器が形成されたリードユニットを拡大して示す斜視図。FIG. 10 is an enlarged perspective view showing a lead unit in which an envelope is formed. 図１１は、反射面を形成する金属の反射率と波長との関係を示す特性図。FIG. 11 is a characteristic diagram showing the relationship between the reflectance and wavelength of the metal forming the reflective surface. 図１２は、この発明の第２の実施形態に係る発光装置の金属部材を示す平面図。FIG. 12 is a plan view showing a metal member of a light emitting device according to the second embodiment of the present invention. 図１３は、この発明の第３の実施形態に係る発光装置がリードフレーム上に形成された状態を示す斜視図。FIG. 13 is a perspective view showing a state in which a light emitting device according to a third embodiment of the present invention is formed on a lead frame. 図１４は、前記発光装置を拡大して示す斜視図。FIG. 14 is an enlarged perspective view showing the light emitting device. 図１５は、変形例に係る発光装置を概略的に示す側面図。FIG. 15 is a side view schematically showing a light emitting device according to a modification.

符号の説明Explanation of symbols

１０…発光装置、１２…金属部材、１４…外囲器、１６ａ、１６ｂ…電極部、
２０…ＬＥＤ、２０ａ…出射面、２２ａ、２２ｂ…側壁部、２３…反射面、
２４…照射開口、２６ａ、２６ｂ…つなぎ部、２８ａ、２８ｂ…外部取出し電極、
３０…封止体、３２…蛍光体、４０…リードフレーム、４６…リードユニット DESCRIPTION OF SYMBOLS 10 ... Light-emitting device, 12 ... Metal member, 14 ... Envelope, 16a, 16b ... Electrode part,
20 ... LED, 20a ... emitting surface, 22a, 22b ... side wall, 23 ... reflecting surface,
24 ... Irradiation opening, 26a, 26b ... Connecting portion, 28a, 28b ... External extraction electrode,
30 ... Sealing body, 32 ... Phosphor, 40 ... Lead frame, 46 ... Lead unit

Claims (11)

金属で形成された一対の電極部と、前記一対の電極部に接続された光源と、金属で形成され、前記光源の光照射方向の周囲を囲んで起立する側壁部と、を備え、
前記側壁部は、前記少なくとも一方の電極部に接続されている発光装置。 A pair of electrode portions formed of metal, a light source connected to the pair of electrode portions, and a side wall portion formed of metal and standing around the light irradiation direction of the light source,
The side wall portion is a light emitting device connected to the at least one electrode portion. それぞれ金属で形成され、前記光源の光照射方向の周囲を囲んで起立した一対の側壁部を備え、前記一対の側壁部は前記一対の電極部に接続されている請求項１に記載の発光装置。   2. The light emitting device according to claim 1, further comprising a pair of side wall portions each formed of metal and standing up around the light irradiation direction of the light source, wherein the pair of side wall portions are connected to the pair of electrode portions. . 前記側壁部の内側で前記光源に重ねて配設され、前記光源から射出される第１波長領域を含む励起光の少なくとも一部を吸収して、前記第１波長領域と異なる第２波長領域の光を射出する波長変換部材を備えている請求項１に記載の発光装置。   The second wavelength region is different from the first wavelength region by absorbing at least a part of the excitation light including the first wavelength region that is disposed on the inner side of the side wall portion and overlapped with the light source. The light emitting device according to claim 1, further comprising a wavelength conversion member that emits light. 前記光源から射出される第１波長領域を含む励起光は、紫外領域を主として含み、前記第２波長領域の光は主として可視光領域の光を含んでいる請求項３に記載の発光装置。   4. The light emitting device according to claim 3, wherein the excitation light including the first wavelength region emitted from the light source mainly includes an ultraviolet region, and the light of the second wavelength region mainly includes light in the visible light region. 前記側壁部は、前記光源から射出される光の内、少なくとも一部を反射する反射面を有している請求項１に記載の発光装置。   The light emitting device according to claim 1, wherein the side wall portion has a reflecting surface that reflects at least a part of light emitted from the light source. 前記側壁部は、前記光源から射出される第１波長領域の光の一部、もしくは前記波長変換部材から射出される第２波長領域の光の一部を反射する反射面を有している請求項３に記載の発光装置。   The side wall portion has a reflection surface that reflects a part of light in a first wavelength region emitted from the light source or a part of light in a second wavelength region emitted from the wavelength conversion member. Item 4. The light emitting device according to Item 3. 前記側壁部の反射面は、Ａｇ、Ａｌの少なくとも一方を主成分とする材料で形成されている請求項５又は６に記載の発光装置。   7. The light emitting device according to claim 5, wherein the reflection surface of the side wall portion is formed of a material mainly containing at least one of Ag and Al. 前記一対の電極部および側壁部の周囲を覆って設けられ、電極部および側壁部を支持した外囲器を備えている請求項１ないし７のいずれか１項に記載の発光装置。   The light emitting device according to any one of claims 1 to 7, further comprising an envelope that is provided so as to cover the pair of electrode portions and the side wall portions and supports the electrode portions and the side wall portions. 前記電極部および側壁部は、共通の金属板により形成されている請求項１ないし８のいずれか１項に記載の発光装置。   The light emitting device according to claim 1, wherein the electrode part and the side wall part are formed of a common metal plate. 前記各電極部から延出し、外部に露出した外部取出し電極を備えている請求項１ないし９のいずれか１項に記載の発光装置。   The light emitting device according to claim 1, further comprising an external extraction electrode that extends from each of the electrode portions and is exposed to the outside. 金属で形成された一対の電極部と、前記一対の電極部に接続された光源と、金属で形成され、前記光源の光照射方向の周囲を囲んで起立する側壁部と、を備え、前記側壁部は、前記少なくとも一方の電極部に接続されている発光装置の製造に用いるリードフレームであって、前記一対の電極部および側壁部を形成する金属部を一体に備えたリードフレーム。   A pair of electrode parts formed of metal, a light source connected to the pair of electrode parts, and a side wall part formed of metal and standing up around the light irradiation direction of the light source. The lead frame is used for manufacturing a light-emitting device connected to the at least one electrode portion, and the lead frame integrally includes a metal portion forming the pair of electrode portions and the side wall portion.
JP2008108089A 2008-04-17 2008-04-17 Light-emitting apparatus and lead frame Withdrawn JP2009260075A (en)

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