JP2009253180A5 - - Google Patents
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- Publication number
- JP2009253180A5 JP2009253180A5 JP2008102089A JP2008102089A JP2009253180A5 JP 2009253180 A5 JP2009253180 A5 JP 2009253180A5 JP 2008102089 A JP2008102089 A JP 2008102089A JP 2008102089 A JP2008102089 A JP 2008102089A JP 2009253180 A5 JP2009253180 A5 JP 2009253180A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- forming
- region
- semiconductor layer
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 33
- 239000000758 substrate Substances 0.000 claims 20
- 239000013078 crystal Substances 0.000 claims 12
- 238000000034 method Methods 0.000 claims 8
- 238000005530 etching Methods 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 5
- 150000002500 ions Chemical class 0.000 claims 4
- 230000001678 irradiating effect Effects 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 230000007547 defect Effects 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002366 halogen compounds Chemical class 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008102089A JP5284669B2 (ja) | 2008-04-10 | 2008-04-10 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008102089A JP5284669B2 (ja) | 2008-04-10 | 2008-04-10 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009253180A JP2009253180A (ja) | 2009-10-29 |
| JP2009253180A5 true JP2009253180A5 (enrdf_load_stackoverflow) | 2011-04-14 |
| JP5284669B2 JP5284669B2 (ja) | 2013-09-11 |
Family
ID=41313561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008102089A Expired - Fee Related JP5284669B2 (ja) | 2008-04-10 | 2008-04-10 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5284669B2 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104992962B (zh) | 2009-12-04 | 2018-12-25 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| US8431994B2 (en) * | 2010-03-16 | 2013-04-30 | International Business Machines Corporation | Thin-BOX metal backgate extremely thin SOI device |
| JP5731369B2 (ja) * | 2010-12-28 | 2015-06-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2019032557A (ja) * | 2018-11-06 | 2019-02-28 | 株式会社ジャパンディスプレイ | 表示装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1145862A (ja) * | 1997-07-24 | 1999-02-16 | Denso Corp | 半導体基板の製造方法 |
| JP2000106333A (ja) * | 1998-09-29 | 2000-04-11 | Sony Corp | Ｓｏｉ構造を有する半導体基板の製造方法及び半導体装置の製造方法 |
| JP2002057309A (ja) * | 2000-08-08 | 2002-02-22 | Sony Corp | Ｓｏｉ基板の作製方法 |
| JP4837240B2 (ja) * | 2002-09-25 | 2011-12-14 | シャープ株式会社 | 半導体装置 |
| KR100879047B1 (ko) * | 2005-03-25 | 2009-01-15 | 샤프 가부시키가이샤 | 반도체 장치 및 그 제조방법 |
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2008
- 2008-04-10 JP JP2008102089A patent/JP5284669B2/ja not_active Expired - Fee Related