JP2009253180A5 - - Google Patents

Claims (8)

Forming a first insulating film on the single crystal semiconductor substrate;
Irradiating the single crystal semiconductor substrate with ions to form an embrittled region;
Forming a conductive film on the first insulating film after forming the embrittled region;
Forming a resist on the conductive film;
Etching the conductive film using the resist as a mask to form a conductive layer processed into a predetermined shape;
Forming a second insulating film having a thickness larger than that of the conductive layer on the first insulating film and the resist;
Removing the resist and removing the second insulating film on the resist by a lift-off method;
Forming a third insulating film on the second insulating film and the conductive layer;
Bonding the single crystal semiconductor substrate and the support substrate so that a gap is formed between the third insulating film in a region overlapping the conductive layer and the support substrate;
Forming a semiconductor layer over the supporting substrate by performing heat treatment and separating the single crystal semiconductor substrate along the embrittled region. Forming a first insulating film to be a first gate insulating film on a single crystal semiconductor substrate;
Irradiating the single crystal semiconductor substrate with ions to form an embrittled region;
Forming a conductive film on the first insulating film after forming the embrittled region;
Forming a resist on the conductive film;
Etching the conductive film using the resist as a mask to form a conductive layer to be a first gate electrode;
Forming a second insulating film having a thickness larger than that of the conductive layer on the first insulating film and the resist;
Removing the resist and removing the second insulating film on the resist by a lift-off method;
Forming a third insulating film on the second insulating film and the conductive layer;
Bonding the single crystal semiconductor substrate and the support substrate so that a gap is formed between the third insulating film in a region overlapping the conductive layer and the support substrate;
Forming a semiconductor layer over the support substrate by performing heat treatment and separating the single crystal semiconductor substrate along the embrittled region;
Etching the semiconductor layer to form an island-shaped semiconductor layer;
Adding an impurity imparting one conductivity type to the island-shaped semiconductor layer to form a source region and a drain region;
Forming a fourth insulating film to be a second gate insulating film on the island-shaped semiconductor layer;
Forming a second gate electrode over the fourth insulating film. In claim 1,
Etching the semiconductor layer to form an island-shaped semiconductor layer;
Adding an impurity imparting one conductivity type to the island-shaped semiconductor layer to form a source region and a drain region;
Forming a source electrode on the source region and a drain electrode on the drain region;
Performing a dry etching process on the exposed surface of the island-shaped semiconductor layer between the source electrode and the drain electrode. In claim 2 or claim 3,
The top surface shape of the island-shaped semiconductor layer is a method for manufacturing a semiconductor device in which one of the source region and the drain region surrounds the other. In any one of Claims 1 thru | or 4,
A method for manufacturing a semiconductor device, comprising: etching a surface of the semiconductor layer to reduce irregularities or defects on the surface of the semiconductor layer and then irradiating the surface of the semiconductor layer with a laser beam to planarize the semiconductor layer. In any one of Claims 1 thru | or 5,
The method for manufacturing a semiconductor device, wherein the gap is 50% or less of the area of the single crystal semiconductor substrate. In any one of Claims 1 thru | or 6,
In the step of forming the embrittled region, the single crystal semiconductor substrate is irradiated with ions using a halogen gas or a halogen compound gas, and then irradiated with ions using a gas containing hydrogen gas to form the embrittled region. A method for manufacturing a semiconductor device. In any one of Claims 1 thru | or 7,
In the step of forming the semiconductor layer over the supporting substrate, the embrittlement region is formed by irradiating microwaves to the bonding region between the single crystal semiconductor substrate and the supporting substrate to increase the bonding strength and then performing the heat treatment. A method for manufacturing a semiconductor device in which the single crystal semiconductor substrate is separated along a line.