JP2009246346A5 - - Google Patents

Download PDF

Info

Publication number
JP2009246346A5
JP2009246346A5 JP2009049196A JP2009049196A JP2009246346A5 JP 2009246346 A5 JP2009246346 A5 JP 2009246346A5 JP 2009049196 A JP2009049196 A JP 2009049196A JP 2009049196 A JP2009049196 A JP 2009049196A JP 2009246346 A5 JP2009246346 A5 JP 2009246346A5
Authority
JP
Japan
Prior art keywords
semiconductor
substrate
base substrate
layer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009049196A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009246346A (ja
JP5478916B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009049196A priority Critical patent/JP5478916B2/ja
Priority claimed from JP2009049196A external-priority patent/JP5478916B2/ja
Publication of JP2009246346A publication Critical patent/JP2009246346A/ja
Publication of JP2009246346A5 publication Critical patent/JP2009246346A5/ja
Application granted granted Critical
Publication of JP5478916B2 publication Critical patent/JP5478916B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009049196A 2008-03-14 2009-03-03 Ｓｏｉ基板の作製方法 Expired - Fee Related JP5478916B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009049196A JP5478916B2 (ja) 2008-03-14 2009-03-03 Ｓｏｉ基板の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008066165 2008-03-14
JP2008066165 2008-03-14
JP2009049196A JP5478916B2 (ja) 2008-03-14 2009-03-03 Ｓｏｉ基板の作製方法

Publications (3)

Publication Number Publication Date
JP2009246346A JP2009246346A (ja) 2009-10-22
JP2009246346A5 true JP2009246346A5 (cg-RX-API-DMAC7.html) 2012-04-19
JP5478916B2 JP5478916B2 (ja) 2014-04-23

Family

ID=41307875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009049196A Expired - Fee Related JP5478916B2 (ja) 2008-03-14 2009-03-03 Ｓｏｉ基板の作製方法

Country Status (1)

Country Link
JP (1) JP5478916B2 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013002227A1 (ja) 2011-06-30 2013-01-03 シャープ株式会社 半導体基板の製造方法、半導体基板作成用基板、積層基板、半導体基板、及び電子デバイス
US9614021B2 (en) * 2013-07-24 2017-04-04 Samsung Display Co., Ltd. Organic light-emitting display apparatus and manufacturing method thereof

Similar Documents

Publication Publication Date Title
JP2009111375A5 (cg-RX-API-DMAC7.html)
JP2009260295A5 (ja) 半導体基板の作製方法
EP1975998A3 (en) Method for manufacturing a plurality of island-shaped SOI structures
JP2009004736A5 (cg-RX-API-DMAC7.html)
JP2011060807A5 (ja) 半導体チップの製造方法
JP2008270775A5 (cg-RX-API-DMAC7.html)
JP2008270771A5 (cg-RX-API-DMAC7.html)
JP2008270774A5 (cg-RX-API-DMAC7.html)
JP2012235103A5 (ja) 半導体装置の作製方法、及び半導体装置
JP2014107448A5 (cg-RX-API-DMAC7.html)
JP2012028755A5 (ja) 分離方法および半導体素子の作製方法
EP1788621A3 (en) Method for manufacturing bonded substrate and bonded substrate manufactured by the method
WO2006095566A8 (en) Nitride semiconductor light-emitting device and method for fabrication thereof
JP2012054540A5 (ja) Ｓｏｉ基板の作製方法
WO2009016794A1 (ja) エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
JP2007513517A5 (cg-RX-API-DMAC7.html)
JP2010287883A5 (ja) 基板及び基板の作製方法
JP2009260314A5 (cg-RX-API-DMAC7.html)
WO2012165903A3 (ko) 반도체 발광 소자，그 제조 방법，이를 포함하는 반도체 발광 소자 패키지 및 레이저 가공 장치
JP2009135472A5 (cg-RX-API-DMAC7.html)
WO2009004889A1 (ja) 薄膜シリコンウェーハ及びその作製法
JP2018049973A5 (cg-RX-API-DMAC7.html)
JP2011228680A5 (ja) Ｓｏｉ基板の作製方法、および半導体基板の作製方法
JP2013070112A5 (cg-RX-API-DMAC7.html)
JP2007123859A5 (cg-RX-API-DMAC7.html)