JP2009238859A - Resin sealed semiconductor device - Google Patents
Resin sealed semiconductor device Download PDFInfo
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- JP2009238859A JP2009238859A JP2008080448A JP2008080448A JP2009238859A JP 2009238859 A JP2009238859 A JP 2009238859A JP 2008080448 A JP2008080448 A JP 2008080448A JP 2008080448 A JP2008080448 A JP 2008080448A JP 2009238859 A JP2009238859 A JP 2009238859A
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
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- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/40249—Connecting the strap to a bond pad of the item the bond pad protruding from the surface of the item
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Abstract
Description
本発明は、樹脂封止半導体装置に関し、特に半導体チップおよびリードを接続する接続子を備えた樹脂封止半導体装置に関するものである。 The present invention relates to a resin-encapsulated semiconductor device, and more particularly to a resin-encapsulated semiconductor device including a connector for connecting a semiconductor chip and a lead.
従来の樹脂封止半導体装置が、特許文献１に半導体装置として開示されている。この樹脂封止半導体装置は、図２に示すように半導体チップ３０のソース電極３２とリードフレーム６０のソース端子６６とを銅板（接続子）５６によって電気的に接続し、樹脂封止されており、ソース端子６６に段部６７を設けて導電ペースト６の流出を防止すると共に、爪部５８をリードフレーム６０に嵌合させている。 A conventional resin-encapsulated semiconductor device is disclosed in Patent Document 1 as a semiconductor device. In this resin-encapsulated semiconductor device, the source electrode 32 of the semiconductor chip 30 and the source terminal 66 of the lead frame 60 are electrically connected by a copper plate (connector) 56 as shown in FIG. The step 67 is provided on the source terminal 66 to prevent the conductive paste 6 from flowing out, and the claw 58 is fitted to the lead frame 60.
このように接続子の爪部５８をリードフレームに嵌合させることで、所望の位置に精度良くリードフレーム６０と接続することができる。
しかしながら従来の樹脂封止半導体装置は、接続子の爪部５８形状に応じてリードフレームに加工を施す必要があるため、接続子や該接続子が嵌合されるリードフレームの加工精度が必要であり、特に接続子を微細化する場合、より精密な加工が要求される。 However, since the conventional resin-encapsulated semiconductor device needs to process the lead frame according to the shape of the claw portion 58 of the connector, the processing accuracy of the connector and the lead frame into which the connector is fitted is necessary. In particular, when the connector is miniaturized, more precise processing is required.
また、従来の樹脂封止半導体装置は、接続子とリードフレームの接続が導電ペースト６を用いて行われるが、導電ペーストの代わりに半田を用いることも可能である。この場合、従来の樹脂封止半導体装置では、形成される半田フィレットの形状について、何ら考慮されていない。 Further, in the conventional resin-encapsulated semiconductor device, the connection between the connector and the lead frame is performed using the conductive paste 6, but it is also possible to use solder instead of the conductive paste. In this case, in the conventional resin-encapsulated semiconductor device, no consideration is given to the shape of the solder fillet to be formed.
更に、封止部によって封止される半導体装置は、接続子がコの字を伏せた形状に屈曲加工されており、この形状によって接続子の表面と樹脂表面までの距離を十分に得ることがでず、いわゆる絶縁距離を十分に得ることができない。換言すれば、十分な絶縁距離を得るには封止する樹脂の厚さ寸法を厚くする必要がある。従って、従来の樹脂封止半導体装置では、高さ寸法を低減することができないことが問題となっていた。 Furthermore, the semiconductor device sealed by the sealing portion is bent into a shape in which the connector is bent in a U shape, and this shape can provide a sufficient distance between the surface of the connector and the resin surface. In other words, a so-called insulation distance cannot be obtained sufficiently. In other words, in order to obtain a sufficient insulation distance, it is necessary to increase the thickness of the resin to be sealed. Therefore, the conventional resin-encapsulated semiconductor device has a problem that the height dimension cannot be reduced.
本発明は上記した事情に鑑みてなされたものであり、本発明の目的は精密な加工精度が不要であると共に、良好な半田フィレットを形成することができ、しかも高さ寸法の低減を図ることができる樹脂封止半導体装置を提供することにある。 The present invention has been made in view of the above circumstances, and an object of the present invention is to eliminate the need for precise processing accuracy, to form a good solder fillet, and to reduce the height dimension. An object of the present invention is to provide a resin-encapsulated semiconductor device that can be used.
本発明は、前記した課題に鑑みてなされたものであり、半導体チップと、該半導体チップの表面に一方端が接続される板状の接続子と、該接続子の他方端が一方端に半田を用いて接続されるリードと、これらをリードの他方端が露出するように封止する封止部と、を備えた樹脂封止半導体装置において、リードは、一方端に凹所を有し、接続子は、他方端がヘの字状に形成されており、その突端が凹所に係合されていることを特徴とする。
接続子は、一方端が半導体チップの表面側に向かって突出していることを特徴とする。
The present invention has been made in view of the above-described problems, and includes a semiconductor chip, a plate-like connector whose one end is connected to the surface of the semiconductor chip, and the other end of the connector being soldered to one end. In the resin-encapsulated semiconductor device including the leads connected by using a sealing portion that seals the leads so that the other end of the leads is exposed, the leads have a recess at one end, The connector is characterized in that the other end is formed in a U shape and the protruding end is engaged with the recess.
The connector is characterized in that one end protrudes toward the surface side of the semiconductor chip.
本発明の樹脂封止半導体装置は、板状の接続子の他方端をヘの字状に形成し、その突端の角をリードの一方端に設けた凹所に係合することにより、従来の樹脂封止半導体装置のように嵌合接続端子をリードに嵌合させる必要がなく、微細化した場合でも精密な加工精度を不要とすることができる。 In the resin-encapsulated semiconductor device of the present invention, the other end of the plate-like connector is formed in a U shape, and the corner of the protruding end is engaged with a recess provided at one end of the lead, Unlike the resin-encapsulated semiconductor device, it is not necessary to fit the fitting connection terminal to the lead, and even when miniaturized, precise processing accuracy can be eliminated.
また本発明の樹脂封止半導体装置は、接続子の突端の角をリードに設けた凹所に係合させることにより、接続子の突端の角を中心に左右に半田フィレットを形成することができる。
更に本発明の樹脂封止半導体装置は、接続子の屈曲を最小限に抑えることができることから、従来の樹脂封止半導体装置と比較して、接続子の表面から樹脂表面までの距離を十分に得ることができる。これにより、本発明の樹脂封止半導体装置は樹脂を厚くしなくても十分な絶縁距離を得ることができ、結果的に樹脂封止半導体装置の高さ寸法の低減を図ることができる。
In the resin-encapsulated semiconductor device of the present invention, the solder fillet can be formed on the left and right sides of the corner of the connector's protruding end by engaging the corner of the protruding end of the connector with the recess provided in the lead. .
Further, since the resin-encapsulated semiconductor device of the present invention can minimize the bending of the connector, the distance from the surface of the connector to the resin surface is sufficiently larger than that of the conventional resin-encapsulated semiconductor device. Obtainable. Thereby, the resin-encapsulated semiconductor device of the present invention can obtain a sufficient insulation distance without increasing the thickness of the resin, and as a result, the height dimension of the resin-encapsulated semiconductor device can be reduced.
以下、図面を用いて、本発明の実施形態を詳細に説明するが、以下の説明では、実施の形態に用いる図面について同一の構成要素は同一の符号を付し、かつ重複する説明は可能な限り省略する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, the same components are denoted by the same reference numerals in the drawings used in the embodiments, and overlapping descriptions are possible. Omitted as much as possible.
本発明の樹脂封止半導体装置１０は、図１に示すように、半導体チップ１と、該半導体チップが載置されるフレーム２と、外部接続するためのリード３と、該リード３および半導体チップ１を半田４を用いて電気的に接続するための接続子５と、これらを樹脂封止する封止部６とを備える。 As shown in FIG. 1, a resin-encapsulated semiconductor device 10 of the present invention includes a semiconductor chip 1, a frame 2 on which the semiconductor chip is placed, leads 3 for external connection, the leads 3 and the semiconductor chip. 1 is provided with a connector 5 for electrically connecting 1 using solder 4 and a sealing portion 6 for resin-sealing them.
半導体チップ１は例えばダイオードやトランジスタなどの半導体素子である。尚、以降の説明ではダイオードを例に説明を行う。 The semiconductor chip 1 is a semiconductor element such as a diode or a transistor. In the following description, a diode will be described as an example.
ダイオードの表面および裏面には、電極が形成されている。該各電極はアノードおよびカソードのためのものである。 Electrodes are formed on the front and back surfaces of the diode. Each electrode is for an anode and a cathode.
フレーム２は、銅などの導電性の板部材をプレス形成したものであり、その表面に半導体チップ１が載置される。尚、半導体チップ１およびフレーム２は、図示省略の半田を用いて接続される。 The frame 2 is formed by press-forming a conductive plate member such as copper, and the semiconductor chip 1 is placed on the surface thereof. The semiconductor chip 1 and the frame 2 are connected using solder (not shown).
フレーム２の表面には溝が設けられており、該溝はその開口が狭窄している。この溝はいわゆるモールドロック２１であり、溝内に後述する封止部６のための樹脂が流入後に硬化することで、フレーム２および封止部６の強固な係合を図ることができる。 A groove is provided on the surface of the frame 2, and the opening of the groove is narrowed. This groove is a so-called mold lock 21, and the resin for the sealing portion 6, which will be described later, flows into the groove and hardens after the flow, so that the frame 2 and the sealing portion 6 can be firmly engaged.
リード３もフレーム２と同様に銅などの導電性の板部材をプレス形成したものである。コのプレス形成により、側面から見て屈曲した矩形状を成し、平面から見て一方端３１側において左右に広がるフィンガー形状を成している（図１（ｃ）参照）。 Similarly to the frame 2, the lead 3 is formed by press-forming a conductive plate member such as copper. Due to the press formation of the U, a rectangular shape is formed as viewed from the side surface, and a finger shape is formed that extends to the left and right at the one end 31 side as viewed from the plane (see FIG. 1C).
尚、前記した形状のリード３は、一方端３１が封止部６によって封止され、他方端３３が封止部６から露出する。 The lead 3 having the above-described shape has one end 31 sealed by the sealing portion 6 and the other end 33 exposed from the sealing portion 6.
リード３の他方端３１には、モールドロックとしての貫通孔３４が形成されており、該貫通孔３４に封止部６のための樹脂が流入後に硬化することで、リード３および封止部６の係合が図られている。尚、リード３の貫通孔３４は、図１に示すように一部が封止部６によって封止される位置に形成してもよいし、全部が封止部６によって封止される位置に形成してもよい。 A through-hole 34 as a mold lock is formed in the other end 31 of the lead 3, and the resin for the sealing portion 6 flows into the through-hole 34 and is cured after being cured, whereby the lead 3 and the sealing portion 6. Is engaged. The through-hole 34 of the lead 3 may be formed at a position where a part is sealed by the sealing portion 6 as shown in FIG. It may be formed.
ところで、リード３は、側面から見て屈曲した形状を有しており、樹脂封止半導体装置１０が形成された状態においてフレーム２の底面およびリード３の他端の底面の高さが揃うようにリード３の屈曲形状や、フレーム２の厚さ寸法などの調整が図られている。 By the way, the lead 3 has a bent shape when viewed from the side, and the bottom surface of the frame 2 and the bottom surface of the other end of the lead 3 are aligned in a state where the resin-encapsulated semiconductor device 10 is formed. The bent shape of the lead 3 and the thickness dimension of the frame 2 are adjusted.
リード３の一方端３１は、その表面に凹所３２を有している。凹所３２は、断面が矩形状を成す溝であり（図１（ｄ）参照）、リード３を形成する際の打ち抜きプレスと同時に形成される。 One end 31 of the lead 3 has a recess 32 on its surface. The recess 32 is a groove having a rectangular cross section (see FIG. 1D), and is formed simultaneously with the punching press when the lead 3 is formed.
この凹所３２には、後述する接続子５の他端の突端が係合され、その係合箇所に供給される溶融した半田４の硬化、若しくは予め供給されている半田４の溶融後の硬化により、リード３および接続子５が固定されリード３および接続子５が電気的に接続される。 The recess 32 is engaged with a protruding end of the other end of a connector 5 described later, and the molten solder 4 supplied to the engaging portion is cured, or the solder 4 supplied in advance is cured after melting. Thus, the lead 3 and the connector 5 are fixed, and the lead 3 and the connector 5 are electrically connected.
リード３および接続子５の接続に用いる半田４は、好適な形状の半田フィレットを形成しており、これは凹所３２および接続子５の係合関係と凹所３２に係合される接続子５の他方端の突端形状とに起因している。 The solder 4 used for the connection between the lead 3 and the connector 5 forms a solder fillet having a suitable shape, which is engaged with the recess 32 and the connector 5 and the connector engaged with the recess 32. This is due to the protruding end shape of the other end of 5.
接続子５は、銅などの導電性の板部材をプレス形成したものであり、側面から見て一方端の裏面の一部が半導体チップ１に向って突出しており、この突出によって半導体チップ１に形成される電極（図示省略）に局所的に接することができる。 The connector 5 is formed by pressing a conductive plate member such as copper. A part of the back surface at one end protrudes toward the semiconductor chip 1 when viewed from the side surface. The electrode can be locally in contact with a formed electrode (not shown).
また、接続子５は、側面から見て他方端がヘの字状に屈曲するように形成されている。詳細には、接続子５の他方端が表面側に向って緩やかな角度で一旦折れ上がり、所定の高さを頂点としてそこから裏面側に向って一方端の裏面と同じ高さまで急峻な角度で折れ下がり、他方端においてヘの字状を成している。尚、ヘの字を成す他方端の突端は、リード３の凹所３２に係合される。 Moreover, the connector 5 is formed so that the other end bends in a U shape when viewed from the side. Specifically, the other end of the connector 5 is bent once at a gentle angle toward the front surface side, and at a steep angle from the predetermined height to the same height as the back surface of the one end from the predetermined height toward the back surface. It folds down and forms a square shape at the other end. The other end of the U-shaped protrusion is engaged with the recess 32 of the lead 3.
封止部６は、フレーム２上に配置された半導体チップ１とリード３の一方端３１を封止すべく、フレーム２の表面に形成されたモールドロック２１と係合するように供給されている。 The sealing portion 6 is supplied so as to engage with a mold lock 21 formed on the surface of the frame 2 in order to seal the semiconductor chip 1 disposed on the frame 2 and one end 31 of the lead 3. .
次に特に前記した構成における特徴的な作用を説明する。
本発明の樹脂封止半導体装置１０は、接続子５およびリード３の係合に特徴があり、この点について詳述する。
Next, the characteristic operation in the above-described configuration will be described.
The resin-encapsulated semiconductor device 10 of the present invention is characterized by the engagement between the connector 5 and the lead 3, and this point will be described in detail.
本発明の樹脂封止半導体装置１０は、接続子５の他方端をヘの字状に形成し、その突端の角をリード３の一方端に設けた凹所３２に係合する。これにより、凹所３２内において接続子５の他方端の突端を不動固定することなく、凹所３２による制約下で接続子５の他方端の突端を可動自在に配置することができる。これにより、例えば特許文献１に示す従来の樹脂封止半導体装置では（図２参照）、爪部５８をリードフレーム６０に嵌合させために加工精度が必要となるため微細化が困難であったが、本発明の樹脂封止半導体装置１０では、凹所３２による制約下で接続子５の他方端の突端を可動自在に配置すればよいので、精密な加工精度が不要であり、容易に微細化することができる。 In the resin-encapsulated semiconductor device 10 of the present invention, the other end of the connector 5 is formed in a U shape, and the corner of the protruding end is engaged with a recess 32 provided at one end of the lead 3. Thus, the protrusion at the other end of the connector 5 can be movably disposed under the restriction by the recess 32 without immobilizing and fixing the protrusion at the other end of the connector 5 in the recess 32. Thereby, for example, in the conventional resin-encapsulated semiconductor device shown in Patent Document 1 (see FIG. 2), it is difficult to miniaturize because the processing accuracy is required to fit the claw portion 58 to the lead frame 60. However, in the resin-encapsulated semiconductor device 10 of the present invention, the protruding end at the other end of the connector 5 may be movably disposed under the restriction by the recess 32, so that precise processing accuracy is not required and it is easily fine. Can be
更に、本発明の樹脂封止半導体装置１０は、接続子５の突端の角をリードに設けた凹所に係合させることにより、接続子５の突端の角を中心に左右に半田フィレットが形成され易い。これにより、左右に形成される半田フィレットによってリード３上に接続子５を安定した状態で固定することができる。 Furthermore, in the resin-encapsulated semiconductor device 10 according to the present invention, the solder fillets are formed on the left and right with the corner of the protrusion of the connector 5 as the center by engaging the corner of the protrusion of the connector 5 with the recess provided in the lead. It is easy to be done. Thereby, the connector 5 can be stably fixed on the lead 3 by the solder fillets formed on the left and right.
加えて本発明の樹脂封止半導体装置１０は、接続子（銅板５１）を杓状に屈曲させた特許文献１に示す従来の樹脂封止半導体装置と比較して、接続子５の表面から封止部６の表面までの距離を十分に得ることができ、封止部６の樹脂を厚くしなくても十分な絶縁距離を得ることができることから、結果的に樹脂封止半導体装置１０の高さ寸法を低減することができる。 In addition, the resin-encapsulated semiconductor device 10 of the present invention is sealed from the surface of the connector 5 as compared with the conventional resin-encapsulated semiconductor device shown in Patent Document 1 in which the connector (copper plate 51) is bent in a bowl shape. A sufficient distance to the surface of the stop portion 6 can be obtained, and a sufficient insulation distance can be obtained without increasing the thickness of the resin of the sealing portion 6. As a result, the height of the resin-encapsulated semiconductor device 10 can be increased. The size can be reduced.
本発明は、前記した実施例に限定されるべきではなく、本発明の要旨を逸脱しない範囲において形状等の変更を行ってもよく、当然そのような樹脂封止半導体装置も本発明の技術的範囲に属する。 The present invention should not be limited to the above-described embodiments, and the shape and the like may be changed without departing from the gist of the present invention. Of course, such a resin-encapsulated semiconductor device is also a technical feature of the present invention. Belongs to a range.
１ 半導体チップ
２ フレーム
２１ モールドロック
３ リード
３１ 一方端
３２ 凹所
３３ 他方端
３４ 貫通孔
４ 半田
５ 接続子
６ 封止部
１０ 樹脂封止半導体装置
DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Frame 21 Mold lock 3 Lead 31 One end 32 Recess 33 Other end 34 Through hole 4 Solder 5 Connector 6 Sealing part 10 Resin sealing semiconductor device
Claims (2)
前記リードは、一方端に凹所を有し、
前記接続子は、他方端がヘの字状に形成されており、その突端が前記凹所に係合されていることを特徴とする樹脂封止半導体装置。 A semiconductor chip, a plate-like connector whose one end is connected to the surface of the semiconductor chip, a lead whose other end is connected to one end using solder, and these are connected to the other end of the lead In a resin-encapsulated semiconductor device provided with a sealing portion that seals so as to be exposed,
The lead has a recess at one end;
2. The resin-encapsulated semiconductor device according to claim 1, wherein the connector is formed in a U shape at the other end, and the protruding end is engaged with the recess.
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| JP2008080448A JP4974943B2 (en) | 2008-03-26 | 2008-03-26 | Resin encapsulated semiconductor device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9922906B2 (en) | 2013-05-23 | 2018-03-20 | Denso Corporation | Electronic device and manufacturing method of electronic device |
| NL2021879A (en) | 2017-11-10 | 2019-05-15 | Shindengen Electric Mfg | Electronic module |
| US11688714B2 (en) | 2017-09-05 | 2023-06-27 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor package with three leads |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02121356A (en) * | 1988-09-09 | 1990-05-09 | Motorola Inc | Automatic-positioning electronic device |
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2008
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02121356A (en) * | 1988-09-09 | 1990-05-09 | Motorola Inc | Automatic-positioning electronic device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9922906B2 (en) | 2013-05-23 | 2018-03-20 | Denso Corporation | Electronic device and manufacturing method of electronic device |
| US11688714B2 (en) | 2017-09-05 | 2023-06-27 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor package with three leads |
| NL2021879A (en) | 2017-11-10 | 2019-05-15 | Shindengen Electric Mfg | Electronic module |
| US11145576B2 (en) | 2017-11-10 | 2021-10-12 | Shindengen Electric Manufacturing Co., Ltd. | Electronic module |
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