JP2009233482A - Method of cleaning particle by atmospheric-pressure plasma - Google Patents
Method of cleaning particle by atmospheric-pressure plasma Download PDFInfo
- Publication number
- JP2009233482A JP2009233482A JP2008078873A JP2008078873A JP2009233482A JP 2009233482 A JP2009233482 A JP 2009233482A JP 2008078873 A JP2008078873 A JP 2008078873A JP 2008078873 A JP2008078873 A JP 2008078873A JP 2009233482 A JP2009233482 A JP 2009233482A
- Authority
- JP
- Japan
- Prior art keywords
- particles
- particle
- nozzle
- gas
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Cleaning In General (AREA)
Abstract
Description
本発明は、汚染粒子を大気圧プラズマにより清浄する方法に関する。 The present invention relates to a method of cleaning contaminant particles with atmospheric pressure plasma.
サンドブラス技術によって、砂などの粒子を高速噴流状態にして物質表面を切削加工することができる。この技術は、適切な粒径、基板を選択することにより、切削加工だけでなく付着加工することができる。このような加工において付着されずに反跳する粒子は基板と衝突し、表面汚染される。このようにして粒子が汚染されるだけでなく種々の前処理で物質、分子で汚染される。大気圧状態で、微小隙間を有する平行電極間に高電界を印加させることによりグロー放電状態のプラズマ(電離状態)を電極間に発生させて電極付近にある物質の表面をダメージなしで吸着有機物や無機付着物等を清浄させることができる。 With the sandblasting technology, particles such as sand can be made into a high-speed jet state to cut the material surface. This technique can perform not only cutting processing but also adhesion processing by selecting an appropriate particle size and substrate. Particles that recoil without being attached in such processing collide with the substrate and are contaminated on the surface. In this way, the particles are not only contaminated but also contaminated with substances and molecules by various pretreatments. By applying a high electric field between parallel electrodes having a minute gap under atmospheric pressure, a plasma in a glow discharge state (ionization state) is generated between the electrodes, so that the surface of the substance in the vicinity of the electrode can be adsorbed without damage. Inorganic deposits and the like can be cleaned.
サンドブラスト技術を応用して粒子噴流体を物質表面に当てて切削加工する装置が製品化されている。粒子径、基板物質条件、噴流状態等を適切に選ぶことにより付着加工をする技術も開発されている。切削加工の場合、アルミナ、酸化ケイ素のような非常に安価な粒子を使用するため粒子は使い捨てしている。付着加工の場合、高価な機能性粒子を使用するため従来のように使い捨てにする方式では、素子等を作製するとき、同技術は優位性が極端に低下する問題を抱えていた。また、微粒子の場合、表面が活性化しているため不要な分子が微粒子表面に吸着している場合が多く、その微粒子の持つ特性が低下するという問題を抱えていた。加工のとき粒子は一度、基板と接触しているため、汚染されておりそのままでは再利用できない、また使用前に既に粒子に汚染物質が吸着している場合は使用できないという問題を抱えていた。粒子は二次粒子を作り易くそのまま粒子を清浄しても二次粒子の内部まで清浄できない、清浄の効率が悪いという問題を抱えていた。また、そのまま清浄回収して再利用するにも回収率が低いという問題を抱えていた。 An apparatus for applying a particle jet fluid to the surface of a material by applying a sandblasting technique and cutting it has been commercialized. A technique for performing adhesion processing by appropriately selecting the particle diameter, substrate material conditions, jet state, and the like has also been developed. In the case of cutting, particles are disposable because very inexpensive particles such as alumina and silicon oxide are used. In the case of adhesion processing, in the conventional method of using disposable functional particles because expensive functional particles are used, the technology has a problem that the superiority is extremely lowered when an element or the like is manufactured. In the case of fine particles, since the surface is activated, unnecessary molecules are often adsorbed on the surface of the fine particles, which has a problem that the characteristics of the fine particles are deteriorated. At the time of processing, since the particles once contact with the substrate, they are contaminated and cannot be reused as they are, and they cannot be used if the contaminants are already adsorbed on the particles before use. The particles have a problem that it is easy to form secondary particles, and even if the particles are cleaned as they are, the inside of the secondary particles cannot be cleaned, and the cleaning efficiency is poor. Also, there is a problem that the recovery rate is low even if it is cleaned and reused as it is.
気体流を利用して粒子流を発生させて大気圧プラズマ状態の空間に粒子流を導入して洗浄し、粒子の汚染を除去して再利用する。その際、気体−粒子流の持つ運動エネルギーにより二次粒子が解れ一次粒子となり効率よく清浄を可能にする。また、ノズルを通して噴射する気体-粒子流を電極に斜方に衝突させ、後方の斜めに設置されているノズルと電極に発生している大気圧プラズマを再度通過させて再度清浄させるので清浄効果を高めることが可能である。さらに、斜方に気体−粒子流および気体流が噴射されるため、一方向に噴流がドリフトするので効率よい清浄粒子回収を可能にする方法を提供するものである。 A particle flow is generated by using a gas flow, and the particle flow is introduced into a space in an atmospheric pressure plasma state to be cleaned, and the particle contamination is removed and reused. At that time, the secondary particles are dissolved by the kinetic energy of the gas-particle flow to become primary particles, which enables efficient cleaning. In addition, the gas-particle flow injected through the nozzle is caused to collide obliquely with the electrode, and the atmospheric pressure plasma generated at the nozzle and the electrode installed obliquely behind is passed again to be cleaned again. It is possible to increase. Furthermore, since the gas-particle flow and the gas flow are jetted in an oblique direction, the jet drifts in one direction, so that a method that enables efficient clean particle recovery is provided.
高価な粒子を用いて加工しても効率よく清浄回収することができるので再利用することが可能となる。よって、本発明のシステムにより、噴流粒子を用いた素子作製法の生産性を向上させることが可能になる。 Even if it is processed using expensive particles, it can be efficiently recovered and recovered, so that it can be reused. Therefore, the system of the present invention can improve the productivity of a device manufacturing method using jet particles.
サンドブラスト、パウダージェット付着(PJD)法のとき発生する汚染粒子の清浄を行う。 Cleans contaminated particles generated during sandblasting and powder jet deposition (PJD).
本発明の方法を実施するための装置全体を図1に示す。
電極1a、1bに1.2kHz、1kVの電圧を印加し、2a、2bのノズルと5a、5bの絶縁体との間の距離を3mmとし、150kPaの圧力でヘリウムを使いFe3O4粒子を2a、2bのノズルから流して粒子を清浄させた。
The entire apparatus for carrying out the method of the present invention is shown in FIG.
A voltage of 1.2 kHz and 1 kV is applied to the
オレイン酸に汚染されたFe3O4粒子(粒径200nm〜500nm)のFT−IRスペクトルと、図1の装置を使って清浄させたFe3O4粒子のFT−IRのスペクトルを測定したところ、清浄後、図2示すようにCH2モードとCOOHモードのスペクトルが消失し清浄効果があることが示された。 The FT-IR spectrum of Fe3O4 particles (particle size 200 nm to 500 nm) contaminated with oleic acid and the FT-IR spectrum of Fe3O4 particles cleaned using the apparatus of FIG. 1 were measured. As shown, the CH2 mode and COOH mode spectra disappeared, indicating a cleansing effect.
マイクロスケールの粒子噴流による切削加工装置はすでに製品化されている。一方、マイクロ・ナノスケールの粒子噴流による付着加工装置は開発段階にある。付着加工では高価な粒子を使用する頻度が多く、回収された粒子を清浄方法がないため、付着加工装置を製品化する上で大きな課題となっている。本発明の装置が付与されることにより製品化されている切削加工用の装置による加工の採算性が向上するばかりでなく、高価な粒子でも付着加工用の装置を使っても採算性がとれるようになり電子部品などの製造装置として製品化されるようになる可能性が非常に高くなる。また、汚染物質が粒子表面に付着した粒子表面を効率よく清浄できるので、電子部品は汚染物質に敏感であり、その製造用粒子の清浄に利用される可能性がある。 Cutting devices using micro-scale particle jets have already been commercialized. On the other hand, adhesion processing equipment using micro / nanoscale particle jets is in the development stage. In the adhesion processing, expensive particles are frequently used and there is no method for cleaning the collected particles, which is a big problem in commercializing the adhesion processing apparatus. The provision of the apparatus of the present invention not only improves the profitability of processing by a cutting apparatus that has been commercialized, but also makes it possible to achieve profitability even with expensive particles even when using an apparatus for adhesion processing. Therefore, there is a very high possibility that it will be commercialized as a manufacturing apparatus for electronic components. In addition, since the particle surface on which the contaminants adhere to the particle surface can be efficiently cleaned, the electronic component is sensitive to the contaminants and may be used for cleaning the particles for production.
1a,1b 電極
2a,2b ノズル
3 ガス流による発生したグロー放電
4 ガスと粒子流と発生したグロー放電
5a,5b 絶縁体
6 粒子
7 清浄粒子ストックボックス
1a,
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008078873A JP5093670B2 (en) | 2008-03-25 | 2008-03-25 | Particle cleaning method using atmospheric pressure plasma |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008078873A JP5093670B2 (en) | 2008-03-25 | 2008-03-25 | Particle cleaning method using atmospheric pressure plasma |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009233482A true JP2009233482A (en) | 2009-10-15 |
JP2009233482A5 JP2009233482A5 (en) | 2011-09-08 |
JP5093670B2 JP5093670B2 (en) | 2012-12-12 |
Family
ID=41248140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008078873A Expired - Fee Related JP5093670B2 (en) | 2008-03-25 | 2008-03-25 | Particle cleaning method using atmospheric pressure plasma |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5093670B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014092394A1 (en) * | 2012-12-10 | 2014-06-19 | 한국기초과학지원연구원 | Powder plasma treatment apparatus |
JP2014170951A (en) * | 2014-04-18 | 2014-09-18 | Nitto Denko Corp | Electric double-layer capacitor |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001181859A (en) * | 1999-10-12 | 2001-07-03 | Natl Inst Of Advanced Industrial Science & Technology Meti | Method and apparatus for manufacturing composite structure |
JP2006159870A (en) * | 2004-12-10 | 2006-06-22 | Sharp Corp | Resource recovery method of plastic waste material, method for producing plastic molded body and plastic molded body, and resource recovery apparatus for plastic |
JP2006205085A (en) * | 2005-01-28 | 2006-08-10 | Ngk Insulators Ltd | Plasma processing apparatus |
JP2007110026A (en) * | 2005-10-17 | 2007-04-26 | Konica Minolta Holdings Inc | Plasma-discharge processing apparatus and method therefor |
JP2007111675A (en) * | 2005-10-24 | 2007-05-10 | Sekisui Chem Co Ltd | Plasma treatment method using one head provided with two or more blowout openings |
-
2008
- 2008-03-25 JP JP2008078873A patent/JP5093670B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001181859A (en) * | 1999-10-12 | 2001-07-03 | Natl Inst Of Advanced Industrial Science & Technology Meti | Method and apparatus for manufacturing composite structure |
JP2006159870A (en) * | 2004-12-10 | 2006-06-22 | Sharp Corp | Resource recovery method of plastic waste material, method for producing plastic molded body and plastic molded body, and resource recovery apparatus for plastic |
JP2006205085A (en) * | 2005-01-28 | 2006-08-10 | Ngk Insulators Ltd | Plasma processing apparatus |
JP2007110026A (en) * | 2005-10-17 | 2007-04-26 | Konica Minolta Holdings Inc | Plasma-discharge processing apparatus and method therefor |
JP2007111675A (en) * | 2005-10-24 | 2007-05-10 | Sekisui Chem Co Ltd | Plasma treatment method using one head provided with two or more blowout openings |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014092394A1 (en) * | 2012-12-10 | 2014-06-19 | 한국기초과학지원연구원 | Powder plasma treatment apparatus |
KR101428524B1 (en) | 2012-12-10 | 2014-08-11 | 한국기초과학지원연구원 | Plasma equipment for treating powder |
CN104519992A (en) * | 2012-12-10 | 2015-04-15 | 韩国基础科学支援研究院 | Powder plasma treatment apparatus |
JP2015528182A (en) * | 2012-12-10 | 2015-09-24 | コリア ベーシック サイエンス インスティテュート | Powder plasma processing equipment |
US10056234B2 (en) | 2012-12-10 | 2018-08-21 | Korea Basic Science Institute | Plasma equipment for treating powder |
JP2014170951A (en) * | 2014-04-18 | 2014-09-18 | Nitto Denko Corp | Electric double-layer capacitor |
Also Published As
Publication number | Publication date |
---|---|
JP5093670B2 (en) | 2012-12-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20120247504A1 (en) | System and Method for Sub-micron Level Cleaning of Surfaces | |
WO2013173578A2 (en) | Contamination removal apparatus and method | |
CN107249753B (en) | Apparatus for treating gas | |
CN101219429A (en) | Method for cleaning quartz parts surface in polycrystal etching cavity | |
US6949145B2 (en) | Vapor-assisted cryogenic cleaning | |
WO2011039972A1 (en) | Cleaning nozzle and dust removal device equipped with same | |
JP2006286665A (en) | Method and apparatus for cleaning electronic device | |
RU2001112760A (en) | The method of cleaning material (options) and a device for its implementation | |
EP2834708A1 (en) | System and method for cleaning surfaces and components of mask and wafer inspection systems based on the positive column of a glow discharge plasma | |
WO2012058548A1 (en) | Integrated substrate cleaning system and method | |
CN103100539A (en) | Device and method for decontaminating surface of optical element | |
JP2008036534A (en) | Electric dust collector | |
JP5093670B2 (en) | Particle cleaning method using atmospheric pressure plasma | |
US8500913B2 (en) | Methods for treating surfaces, and methods for removing one or more materials from surfaces | |
US8961693B2 (en) | Component supporting device | |
JP4348176B2 (en) | Dry etching processing apparatus and processing method | |
JP2009233482A5 (en) | ||
KR101341452B1 (en) | A supersonic waves lease the regular plasma head dry plasma Ashing | |
CN102891071A (en) | Novel normal pressure plasma free radical cleaning spray gun | |
JP2010165726A (en) | Vacuum processing apparatus and cleaning method of electrostatic chuck in the vacuum processing apparatus | |
KR100618905B1 (en) | System for removing static electricity and system for taping process by using the same | |
JP2000277476A (en) | Semiconductor wafer cleaning device | |
US20140053868A1 (en) | Method And Apparatus For Surface Cleaning | |
KR101603223B1 (en) | Charged ultrafine droplet generation apparatus and electrostatic precipitator using the same | |
US20040217006A1 (en) | Residue removers for electrohydrodynamic cleaning of semiconductors |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110324 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110324 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20110324 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110704 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20110704 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120705 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120814 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120906 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5093670 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150928 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |