JP2009231716A - Bonding material and method of manufacturing semiconductor module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a bonding material capable of preventing progress of cracking in a bonding part by a thermal impact even if operated at a high temperature while maintaining a high electrical conductivity and a high temperature conductivity, and to provide a method of manufacturing a semiconductor module using the bonding material. <P>SOLUTION: The bonding material 4 to be provided on a bonding part of a heat sink 6 and a semiconductor chip 1 laminated on the heat sink 6 includes a first main surface (upper surface) facing the semiconductor chip 1 and a second main surface (lower surface) facing the heat sink 6. A hole part elongating from the upper surface to the lower surface (vertical direction) is formed so as to form a two-dimensional mesh structure along the direction of elongation of the upper surface and the lower surface. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a bonding material and a method for manufacturing a semiconductor module, and in particular, a bonding material provided at a bonding portion between a base material such as a circuit forming material and a semiconductor component laminated on the base material, and the bonding material. The present invention relates to a method for manufacturing a used semiconductor module.

  In a conventional power semiconductor module, a semiconductor component and a heat sink are joined with high-temperature solder, and then they are joined to a circuit board, a lead frame, or a heat-dissipating base plate with medium or low-temperature solder. As the above-mentioned high-temperature solder, solders such as Pb—Sn and Au—Sn are frequently used. However, when using a Pb—Sn solder, it should be noted that a lead component is included. In addition, Au-Sn solder has low versatility because it contains expensive gold.

  As semiconductor components for power semiconductor modules become smaller and more functional, the current density also increases, and when an overload is applied to the product, the temperature of the junction tends to rise rapidly and is likely to be exposed to high temperatures. As a result, the stress generated at the joint is increased. It is desired to develop a bonding material and a bonding structure that can alleviate this large stress and suppress the development of cracks that occur in the bonding portion (solder, semiconductor component, circuit, and substrate).

  On the other hand, when joining a semiconductor component and a heat sink, or a semiconductor component and a lead, a board | substrate, etc., a stress relaxation layer may be introduce | transduced (for example, Unexamined-Japanese-Patent No. 2004-298862 (patent document 1)). 3 pages 44 lines to 5 pages 40 lines and FIG. 1 etc.). In Patent Document 1, a foam metal formed with a three-dimensional network porous material is impregnated with any of metals (copper, nickel, silver, iron) having a melting point higher than that of solder, and the surface of the metal foam material is covered. . At this time, the average diameter of the pores of the foam metal is 10 to 1000 μm, and the porosity is 20 to 95 percent.

  Japanese Patent Laid-Open No. 2003-163435 (Patent Document 2) shows that compressive stress and vibration are alleviated by receiving a columnar solder grid array with a support frame.

Further, according to Japanese Patent Laid-Open No. 2006-352080 (Patent Document 3), in manufacturing a power semiconductor module, a ceramic substrate on which a semiconductor chip, a heat sink, and a circuit are formed is all bonded together with silver (Ag) nanopaste. It has been shown.
Japanese Patent Laid-Open No. 2004-29862 JP 2003-163435 A JP 2006-352080 A

  As in Patent Document 1, in a joint structure in which foam metal is joined with solder, the solder cracks due to the stress generated by the difference in thermal expansion coefficient of each joining member (solder, semiconductor component, substrate, circuit material). May occur. As a result, there is a problem that the circuit of the product is disconnected and causes a malfunction. Furthermore, in order to increase the stress relaxation effect of the foam metal, it is necessary to increase the porosity, but in that case, there is a problem that the electrical conductivity that is the original purpose of the bonding material is impaired. At the same time, it is difficult to conduct heat generated from the semiconductor component to the heat radiating plate, and the temperature of the joint and the semiconductor component increases more and more, causing a malfunction. Furthermore, since it is difficult to control the pore diameter and arrangement of the foam metal, the joint area at the joint end may be reduced. In this case, since a large stress is concentrated due to thermal shock, cracks are developed instead. There was also a problem.

  When using semiconductor components capable of operating at high temperatures, it is necessary to use solder having a high melting point. In this case, the bonding temperature tends to be high, and the cracks as described above are likely to occur.

  Further, the columnar solder array as shown in Patent Document 2 is manufactured by a known manufacturing method such as a convection reflow solder process, but the electrical conductivity and thermal conductivity are sufficiently obtained because the column spacing cannot be made dense. There was no problem.

Also, Patent Document 3 does not show a configuration that can solve the above-described problem.
The present invention has been made in view of the above problems, and the object of the present invention is to crack joints due to thermal shock even when operated at a high temperature while maintaining high electrical conductivity and high thermal conductivity. It is an object of the present invention to provide a bonding material that does not easily develop, and a method for manufacturing a semiconductor module using the bonding material.

  In one aspect, the bonding material according to the present invention is a bonding material provided at a bonding portion between a base material and a semiconductor component laminated on the base material. In this aspect, the bonding material includes a first main surface that faces the semiconductor component and a second main surface that faces the base material. A hole extending in the direction from the first main surface toward the second main surface is formed so that a two-dimensional network structure is formed along the direction in which the first main surface and the second main surface extend. Has been.

  In another aspect, the bonding material according to the present invention is a bonding material provided at a bonding portion between the heat sink and the substrate interposed between the substrate and the semiconductor component. In this aspect, the bonding material includes a first main surface facing the heat sink and a second main surface facing the substrate. A hole extending in the direction from the first main surface toward the second main surface is formed so that a two-dimensional network structure is formed along the direction in which the first main surface and the second main surface extend. Has been.

  The manufacturing method of the semiconductor module which concerns on this invention is a manufacturing method of the semiconductor module using the above-mentioned joining material.

  In one aspect, in a method for manufacturing a semiconductor module, a bonding material provided at a bonding portion between a base material and a semiconductor component laminated on the base material is used. In this case, the manufacturing method of the semiconductor module includes a step of interposing the bonding material and the conductive adhesive between the base material and the semiconductor component, and a step of heating the base material and the semiconductor component interposing the bonding material. A step of forming a bonding material on the substrate or the semiconductor component, a step of placing the semiconductor component on the substrate so that the bonding material is interposed, and a substrate having the bonding material interposed And a step of heating the semiconductor component.

  In another aspect, a method for manufacturing a semiconductor module uses a bonding material provided at a bonding portion between a heat sink and a substrate interposed between the substrate and the semiconductor component. In this case, the semiconductor module manufacturing method includes a step of interposing the bonding material and the conductive adhesive between the substrate and the heat dissipation plate, and a step of heating the substrate and the heat dissipation plate interposed with the bonding material. A step of forming a bonding material on the substrate or the heat dissipation member, a step of placing a heat dissipation plate on the substrate so that the bonding material is interposed, and heating the substrate and the heat dissipation plate interposed with the bonding material And a step of performing.

  According to the present invention, even when operated at a high temperature, a highly reliable bonding material in which a crack is hardly generated due to stress concentration caused by thermal shock while maintaining high electrical conductivity and high thermal conductivity, and the bonding material. The manufacturing method of the semiconductor module using can be provided.

  Embodiments of the present invention will be described below. Note that the same or corresponding parts are denoted by the same reference numerals, and the description thereof may not be repeated.

  Note that in the embodiments described below, when referring to the number, amount, and the like, the scope of the present invention is not necessarily limited to the number, amount, and the like unless otherwise specified. In the following embodiments, each component is not necessarily essential for the present invention unless otherwise specified. In addition, when there are a plurality of embodiments below, it is planned from the beginning to appropriately combine the configurations of the embodiments unless otherwise specified.

  FIG. 1 is a model diagram schematically showing a joint structure according to Embodiments 1 to 5 described later. Referring to FIG. 1, the joint structure according to the first to fifth embodiments is a joint structure between base material 100 and semiconductor component 200 stacked on base material 100. A bonding material 300 and a conductive adhesive 400 are interposed between the base material 100 and the semiconductor component 200. The conductive adhesive 400 includes metal fine particles, and bonds the bonding material 300 to the base material 100 and the semiconductor component 200.

  The bonding material 300 is provided at the bonding interface of each bonding portion of the power module and forms a two-dimensional network structure (reticulation). For the formation of this network structure, a conductive adhesive containing metal fine particles is used. A conductive adhesive containing metal fine particles is known as a metal nanopaste, and contains fine metal particles having a particle diameter of 1 nm to 50 nm coated with an organic protective film, and its surface is active, so that the original metal melting point The metal bond is obtained by sintering at a lower temperature, and the heat resistance is improved to the metal melting point after sintering.

  Next, a method for manufacturing the above-described joint structure will be described. A layer of the conductive adhesive 400 containing metal fine particles is formed on both bonding surfaces of the bonding material 300 by dipping or the like. And the joint surfaces of a to-be-joined object are laminated | stacked through a conductive adhesive. Further, as described in a third embodiment described later, a predetermined mesh structure is formed by using a method such as screen printing on a material to be bonded (semiconductor component, lead frame, heat sink, copper foil on the substrate surface, etc.). In this way, the bonding structure may be formed by applying a conductive adhesive.

  Next, it is heated and held at a temperature of about 50 ° C. to 300 ° C. for about 1 hour. At this time, in order to improve the denseness of the bonding material and prevent the misalignment of the stacked portion, it is preferable to press the object to be bonded. In addition, the atmosphere is preferably reduced in pressure and the oxygen concentration is suppressed to 1% or less in order to prevent surface oxidation, but can also be produced in the air. When the predetermined heating is completed, a metal bond is generated between the bonding material and the material to be bonded during cooling, whereby a strong bond is obtained. Since the joint does not melt to the melting point of the metal, the joint is not affected even if the same process is repeated or another solder joint process is performed. Furthermore, since the stress caused by repeated thermal shocks applied to the power module produced using this joint structure can be reduced, the crack propagation at the joint can be suppressed and the product life can be extended.

(Embodiment 1)
FIG. 2 is a cross-sectional view of the semiconductor module according to the first embodiment. Referring to FIG. 2, semiconductor chip 1, metallized layer 2 formed on the back surface of semiconductor chip 1, conductive adhesive 3 and bonding material 4, metallized layers 5 </ b> A and 5 </ b> B, heat sink 6, and metallized layer 7 and a wiring layer 8 and a substrate 9.

  The semiconductor chip 1 and the metallized layer 2, which are SiC semiconductor chips, are bonded to the heat dissipation plate 6 (copper plate) on which the metallized layers 5 </ b> A and 5 </ b> B (nickel film) are formed via the conductive adhesive 3 and the bonding material 4. Yes. The metallized layers 5A and 5B are formed on both surfaces of the heat radiating plate 6, respectively. Further, the heat sink 6 on which the metallized layers 5A and 5B are formed is a substrate on which the metallized layer 7 (nickel film) and the wiring layer 8 (Cu wiring layer) are formed via the conductive adhesive 3 and the bonding material 4. 9 (alumina substrate). The metallized layer 7 is formed on the wiring layer 8. The wiring layer 8 is formed on the substrate 9.

  The conductive adhesive 3 is a paste-like conductive adhesive containing silver (Ag) nanoparticles. The bonding material 4 is a bonding material having a honeycomb structure manufactured by printing a conductive adhesive containing silver (Ag) nanoparticles on a silver foil (Ag foil) by inkjet. As said silver foil, the thing of the thickness of 50 micrometers whose handling is comparatively easy was used. In addition, it is preferable that the thickness of silver foil is about 10 micrometers or more and 500 micrometers or less. The total thickness of the bonding material 4 is preferably about 50 μm or more and 2000 μm or less.

  Next, a manufacturing process of the semiconductor module illustrated in FIG. 2 will be described. First, the bonding material 4 having a honeycomb structure is cut in accordance with the area of the heat radiating plate 6 made of a nickel-plated copper plate. And the both surfaces of the cut | disconnected joining material 4 are immersed in the conductive adhesive containing silver (Ag) nanoparticle in order. Furthermore, an alumina substrate (substrate 9) on which nickel-plated copper wiring (wiring layer 8) is directly formed is prepared, and the bonding material 4 to which a conductive adhesive is attached is placed on the substrate 9. Further, the above-described heat sink 6 is laminated on the bonding material 4. Next, both joint surfaces of the bonding material 4 having a honeycomb structure cut in accordance with the areas of the plurality of semiconductor chips 1 were sequentially immersed in a conductive adhesive containing silver (Ag) nanoparticles in the same manner as described above. Then, it is laminated on the heat sink 6. Further, the semiconductor chip 1 is laminated on the bonding material 4. And each component is joined through a heat treatment process. After bonding the components, wire bonding is performed to connect the semiconductor chip 1 and an external circuit.

  In the present embodiment, by adjusting the viscosity of the conductive adhesive 3 and the speed at which the bonding material 4 immersed in the conductive adhesive 3 is pulled up, as shown in FIG. The formed through hole is not completely filled with the conductive adhesive 3. In FIG. 3, the metallization layers 2 and 5A are not shown for convenience of illustration and description.

  Since the conductive adhesive 3 contains an organic component, it reacts with oxygen during heat treatment to generate a decomposition gas. Therefore, in order to improve the denseness of the bonded portion, after reducing the pressure from the atmosphere, the oxygen concentration was controlled to 1% or less, and each part was fixed and pressurized using a jig not shown here. In this state, bonding was performed by heating at a temperature of 150 ° C. for about 60 minutes. However, the temperature and time suitable for this bonding differ depending on the type of conductive adhesive.

  In the present embodiment, each component and the bonding material 4 having a honeycomb structure are firmly bonded by metal bonding. The inventors of the present application have conducted a thermal cycle test (1000 cycles) from −50 ° C. to 200 ° C. with respect to the power semiconductor module including the joint structure according to the present embodiment, and confirmed that there is no disconnection portion or damage. . Furthermore, the inventors of the present application have confirmed the superiority of the junction structure according to the present embodiment by conducting a thermal cycle test on the semiconductor module including the junction structure according to Comparative Example 1 and Comparative Example 2 below. Yes.

Comparative Example 1
In joining the Si semiconductor component and the gold-plated copper (Cu) lead frame, a conductive adhesive containing silver (Ag) fine particles is applied to the lead frame by screen printing. After performing a heat treatment for about 90 minutes at a temperature of about 150 ° C., and performing a cooling cycle test (300 cycles) from −50 ° C. to 200 ° C., cracks occurred in the Si semiconductor component.

Comparative Example 2
In joining the SiC semiconductor component and the heat sink, a foam metal made of nickel (Ni) having an average pore diameter of 50 μm and a porosity of 20 percent is joined by Sn—Ag—Cu solder having a melting point of about 220 ° C. When a thermal cycle test (300 cycles) from −50 ° C. to 200 ° C. was performed, cracks occurred in the solder joints.

  Thus, according to the present embodiment, a highly reliable power module can be obtained with respect to Comparative Examples 1 and 2.

  FIG. 4 is a schematic diagram showing a state in which the bonding material 4 in the present embodiment is viewed from the bonding surface side. In the present embodiment, the shape of the two-dimensional network structure in the bonding material 4 is a hexagonal honeycomb as shown in FIG. 4A, but instead of this, a corrugated shape as shown in FIG. A flex type as shown in FIG. 4C may be used. Further, in place of the above, although not shown, a shape grid type, truss grid type, spiral grid type, tube core type, zeta core type, NOR core type, or para-beam type may be used.

  It is preferable that the two-dimensional network structure has a portion that intersects with each other obliquely or has a curved portion as in the above example. By doing in this way, a network structure with a high degree of stress relaxation can be obtained.

  In the present embodiment, silver (Ag) is used as the main component of the bonding material 4 and the conductive adhesive 3, but instead of this, copper (Cu), gold (Au), platinum (Pt), You may use what has aluminum (Al) and tin (Sn) as a main component. By using these materials as the main components, it is possible to obtain a joint structure excellent in electrical conductivity and thermal conductivity. In addition, the size of the metal fine particles contained in the conductive adhesive 3 is not particularly limited as long as a state in which the metal fine particles are bonded by metal bonding after bonding is obtained.

  The semiconductor chip 1 is not limited to a power module using a SiC semiconductor, and may be a power module using a Si semiconductor or the like.

  According to the present embodiment, since there is a regular unbonded portion at the bonding interface where the semiconductor component 1 and the bonding material 4 are in contact, the stress due to the difference in thermal expansion coefficient between the semiconductor component 1 and the bonding material 4 is dispersed. The crack progress of the bonding material 4 and the bonded material can be suppressed. Further, since the bonding material 4 has regular through-holes, the mechanical strength is high even if stress is generated due to the difference in the thermal expansion coefficient, and crack propagation of the bonded material such as the semiconductor chip 1 is suppressed and highly reliable. Can be obtained. And since said effect is acquired even if a porosity is small, the joining material 4 with high electrical conductivity and heat conductivity can be obtained. In addition, since a conductive adhesive containing metal fine particles is used as a material constituting the bonding material 4, metal bond bonding can be obtained at a temperature lower than the solidus temperature of the bonding material 4 at the bonding interface. Furthermore, since the bonding material 4 and the conductive adhesive 3 interposed in the members to be bonded become a single layer of metal bonding, the heat resistance is improved to the melting point of the metal. When such a joining structure is used for the power semiconductor module, a highly reliable module can be obtained.

  The above contents are summarized as follows. That is, the bonding material 4 according to the present embodiment is a bonding material provided at a bonding portion between the heat radiation plate 6 as the “base material” and the semiconductor chip 1 as the “semiconductor component” laminated on the heat radiation plate 6. A first main surface (upper surface in FIG. 2) facing the semiconductor chip 1 and a second main surface (lower surface in FIG. 2) facing the heat sink 6 are provided. And the hole part extended in the direction (up-down direction in FIG. 2) which goes to a lower surface from an upper surface is formed so that a two-dimensional network structure may be formed along the direction where an upper surface and a lower surface extend.

  The bonding material 4 is also provided at the bonding portion between the heat sink 6 and the substrate 9. Here, the bonding material includes a first main surface (upper surface in FIG. 2) facing the heat sink 6 and a second main surface (lower surface in FIG. 2) facing the substrate 9. And the hole part extended in the direction (up-down direction in FIG. 2) from an upper surface to a lower surface is formed so that a two-dimensional network structure may be formed along the direction where an upper surface and a lower surface extend.

  The semiconductor module according to the present embodiment includes the above-described bonding structure, and the manufacturing method thereof includes a step of immersing the bonding material 4 in the conductive adhesive 3 (S11) as shown in FIG. The step (S12) of interposing the bonding material 4 to which the conductive adhesive 3 is attached between the heat sink 6 and the semiconductor chip 1 and between the substrate 9 and the heat sink 6; Heating the mounted heat sink 6, semiconductor chip 1, and substrate 9 (S13).

  In addition, the above-mentioned joining structure does not use an insulating substrate such as alumina, but is a single material or a clad material such as copper (Cu), aluminum (Al), iron (Fe), or Inver which is an iron-nickel alloy. The present invention can also be applied to a module structure in which a semiconductor component is joined to a lead frame made of Further, the above-described joining structure can also be applied to a module structure without the heat sink 6. In this case, the substrate 9 constitutes a “base material”.

(Embodiment 2)
The semiconductor module according to the second embodiment is a modification of the semiconductor module according to the first embodiment, and is characterized by its manufacturing method. That is, in the method for manufacturing a semiconductor module according to the present embodiment, as shown in FIG. 6, a step (S21) of applying the conductive adhesive 3 on the member to be joined by screen printing or the like, and the conductive adhesive 3 A step (S22) of interposing the bonding material 4 between the bonded members to which the bonding material is applied, and a step of heating the bonded member interposing the bonding material 4 (S23).

  Also in the present embodiment, as in the first embodiment, a power semiconductor module having high reliability while maintaining high conductivity and thermal conductivity can be obtained.

(Embodiment 3)
FIG. 7 is a diagram for explaining a method of manufacturing a semiconductor module according to the third embodiment. Referring to FIG. 7A, first, negative resist is applied to a thickness of about 2 μm on the lead frame 12 on which the plating layers 11A and 11B made of gold (Au) are formed. A resist pattern 10 is formed. Next, as shown in FIG. 7B, the conductive adhesive 3 containing silver (Ag) fine particles is applied by screen printing. Furthermore, when the resist pattern 10 was removed after performing the same heat treatment as in the first embodiment, a honeycomb bonding material made of the conductive adhesive 3 was formed as shown in FIG. A conductive adhesive containing silver (Ag) fine particles is applied to the surface of this bonding material, and after mounting the semiconductor chip 1 as shown in FIG. 7D, the same heat treatment as in the first embodiment is performed again. . Finally, leads for connecting the semiconductor chip 1 and an external circuit are formed on the surface of the semiconductor chip 1 to produce a power module.

  Also in the semiconductor module according to the present embodiment, there is no damage to the joint after the thermal cycle test, and a highly reliable power module can be formed. Moreover, this module is excellent also in electrical conductivity and heat conductivity.

  The above contents are summarized as follows. That is, in the method for manufacturing a semiconductor module according to the present embodiment, as shown in FIG. 8, a step of forming a honeycomb bonding material made of the conductive adhesive 3 on the lead frame 12 as a “base” (S31). And stacking the semiconductor chip 1 on the lead frame 12 so that the honeycomb bonding material is interposed (S32), and heating the lead frame 12 and the semiconductor chip 1 including the honeycomb bonding material (S33). With.

  Of course, it is possible to apply the process according to the present embodiment to, for example, the joint between the semiconductor component 1 and the heat sink 6 and the joint between the heat sink 6 and the substrate 9 in the first embodiment. is there.

(Embodiment 4)
The semiconductor module according to the fourth embodiment is a modification of the semiconductor module according to the third embodiment. That is, in the semiconductor module according to the present embodiment, when the honeycomb bonding material made of the conductive adhesive 3 is formed, the diameter of the hole forming the two-dimensional network structure is set at a position facing the peripheral portion of the semiconductor chip 1. Is relatively small, and is relatively large at a position facing the central portion of the semiconductor chip 1. Note that the semiconductor module according to the present embodiment is manufactured by changing the printing interval when forming the honeycomb structure by inkjet.

  By forming the honeycomb structure as described above, the stress relaxation effect is enhanced at a position facing the central portion of the semiconductor chip 1 where a greater stress is likely to occur, and high conductivity is achieved at a position facing the peripheral portion of the semiconductor chip. And heat conductivity can be ensured. As a result, according to the present embodiment, it is possible to provide a power module with further improved reliability, conductivity, and thermal conductivity.

(Embodiment 5)
The semiconductor module according to the fifth embodiment is a modification of the semiconductor module according to the third embodiment. That is, in the semiconductor module according to the present embodiment, a honeycomb structure was formed on the lead frame 12 as in the third embodiment, and then a nickel film was formed at the joint portion of the honeycomb structure by nickel electroless plating. Thereafter, a solder paste mainly composed of tin (Sn) and having a melting point higher than 220 ° C. is applied to the upper portion of the bonding material, that is, the surface to be bonded to the semiconductor chip 1, and the temperature is about 250 ° C. for about 60 seconds. Heat treatment is performed. Thereafter, as in the third embodiment, leads for connecting the semiconductor chip 1 and an external circuit are formed on the surface of the semiconductor chip 1 to manufacture a power module.

  As described above, the wettability with the solder can be improved by forming the nickel film at the joint portion of the honeycomb structure. As a result, a highly reliable power module in which electromigration is suppressed even after the high temperature holding test is obtained.

  When the main component of the honeycomb bonding material is silver or copper, the wettability of the solder can be improved by coating the surface of the bonding material with nickel or gold as described above.

  Although the embodiments of the present invention have been described above, the embodiments disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is a model figure which shows typically the junction structure which concerns on Embodiment 1-5 of this invention. It is sectional drawing of the semiconductor module which concerns on Embodiment 1, 2 of this invention. It is a figure which shows in detail the junction structure of the semiconductor chip and heat sink in the semiconductor module shown by FIG. It is a figure which shows the example of the honeycomb core applied to the joining structure shown by FIG. It is a flowchart which shows the manufacturing method of the semiconductor module which concerns on Embodiment 1 of this invention. It is a flowchart which shows the manufacturing method of the semiconductor module which concerns on Embodiment 2 of this invention. It is a figure explaining the manufacturing method of the semiconductor module which concerns on Embodiment 3-5 of this invention. It is a flowchart which shows the manufacturing method of the semiconductor module which concerns on Embodiment 3-5 of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Semiconductor chip, 2, 5A, 5B, 7 Metallized layer, 3 Conductive adhesive, 4 Bonding material, 6 Heat sink, 8 Wiring layer, 9 Substrate, 10 Resist pattern, 11A, 11B Plating layer, 12 Lead frame, 100 Substrate, 200 semiconductor component, 300 bonding material, 400 conductive adhesive.

Claims (10)

A bonding material provided at a bonding portion between a base material and a semiconductor component laminated on the base material,
A first main surface facing the semiconductor component;
A second main surface facing the substrate;
A hole extending in a direction from the first main surface toward the second main surface so that a two-dimensional network structure is formed along a direction in which the first main surface and the second main surface extend. A bonding material formed. A bonding material provided at a bonding portion between the substrate and the heat dissipation plate interposed between the semiconductor component and the substrate,
A first main surface facing the heat sink;
A second main surface facing the substrate,
A hole extending in a direction from the first main surface toward the second main surface so that a two-dimensional network structure is formed along a direction in which the first main surface and the second main surface extend. A bonding material formed.   The bonding material according to claim 1, wherein the two-dimensional network structure has a first portion and a second portion that extend in directions obliquely intersecting each other.   The bonding material according to claim 1, wherein the two-dimensional network structure includes a curved portion.   The two-dimensional network structure has any one of hexagonal shape, flex shape, corrugated shape, shape grid shape, truss grid shape, spiral grid shape, tube core shape, zeta core shape, NOR core shape, and parabeam shape. The bonding material according to any one of claims 1 to 4, further comprising:   The said joining material is a joining material in any one of Claims 1-5 which has as a main component at least 1 type of material among the group which consists of silver, copper, gold | metal | money, tin, platinum, and aluminum. A method for manufacturing a semiconductor module using the bonding material according to claim 1,
Interposing the bonding material and conductive adhesive between the substrate and the semiconductor component;
A method of manufacturing a semiconductor module, comprising: heating the base material and the semiconductor component with the bonding material interposed therebetween. A method for manufacturing a semiconductor module using the bonding material according to claim 1,
Forming the bonding material on the substrate or the semiconductor component;
Placing the semiconductor component on the substrate so that the bonding material is interposed; and
A method for manufacturing a semiconductor module, comprising: heating the base material and the semiconductor component with the bonding material interposed therebetween. A method for manufacturing a semiconductor module using the bonding material according to claim 2,
Interposing the bonding material and conductive adhesive between the substrate and the heat sink;
A method of manufacturing a semiconductor module, comprising: heating the substrate and the heat sink with the bonding material interposed therebetween. A method for manufacturing a semiconductor module using the bonding material according to claim 2,
Forming the bonding material on the substrate or the semiconductor component;
Placing the heat sink on the substrate so that the bonding material is interposed; and
A method of manufacturing a semiconductor module, comprising: heating the substrate and the heat sink with the bonding material interposed therebetween.

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