JP2009224601A - Ultrasonic wave bonding apparatus, and method of manufacturing semiconductor apparatus using the same - Google Patents

Ultrasonic wave bonding apparatus, and method of manufacturing semiconductor apparatus using the same Download PDF

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JP2009224601A
JP2009224601A JP2008068205A JP2008068205A JP2009224601A JP 2009224601 A JP2009224601 A JP 2009224601A JP 2008068205 A JP2008068205 A JP 2008068205A JP 2008068205 A JP2008068205 A JP 2008068205A JP 2009224601 A JP2009224601 A JP 2009224601A
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ultrasonic
ultrasonic vibration
connection conductor
ultrasonic wave
application
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Tomohiro Iguchi
知洋 井口
Hideo Nishiuchi
秀夫 西内
Tomoyuki Kitani
智之 木谷
Takahiro Aizawa
隆博 相澤
Hiroshi Tojo
啓 東條
Masako Oishi
昌子 大石
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Toshiba Corp
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Toshiba Corp
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/77—Apparatus for connecting with strap connectors
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/37124—Aluminium [Al] as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/77—Apparatus for connecting with strap connectors
    • H01L2224/7725—Means for applying energy, e.g. heating means
    • H01L2224/773—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/77313—Wedge
    • H01L2224/77314—Shape
    • H01L2224/77315—Shape of the pressing surface, e.g. tip or head
    • H01L2224/77316—Shape of the pressing surface, e.g. tip or head comprising protrusions
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/77—Apparatus for connecting with strap connectors
    • H01L2224/7725—Means for applying energy, e.g. heating means
    • H01L2224/773—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/77343—Means for applying energy, e.g. heating means by means of pressure by ultrasonic vibrations
    • H01L2224/77353—Ultrasonic horns
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/77—Apparatus for connecting with strap connectors
    • H01L2224/777—Means for aligning
    • H01L2224/77743—Suction holding means
    • H01L2224/77745—Suction holding means in the upper part of the bonding apparatus, e.g. in the wedge
    • H—ELECTRICITY
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/77—Apparatus for connecting with strap connectors
    • H01L2224/777—Means for aligning
    • H01L2224/77754—Guiding structures
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/842—Applying energy for connecting
    • H01L2224/84201—Compression bonding
    • H01L2224/84205—Ultrasonic bonding
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an ultrasonic wave bonding apparatus capable of improving productivity and production efficiency, and to provide a method of manufacturing a semiconductor apparatus, using this ultrasonic wave bonding apparatus. <P>SOLUTION: The ultrasonic wave bonding apparatus has: an ultrasonic wave vibration generator 21 generating ultrasonic wave vibration; a bar-shaped ultrasonic wave horn 22 to which the ultrasonic wave vibration is propagated from the ultrasonic wave vibration generator 21; and an application block 23 which is attached to the ultrasonic wave horn 22 and has an application surface to be brought into contact with a bonding target 3. A plurality of convex parts 26, grasping the bonding target 3, is provided to the application surface, and a value indicating the height from the application surface of the convex parts 26 to the head is smaller than the value indicating the thickness of the bonding target 3. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、荷重と超音波振動とを接合対象物に印加して接合を行う超音波接合装置及びこの超音波接合装置を使用した半導体装置の製造方法に関する。   The present invention relates to an ultrasonic bonding apparatus that performs bonding by applying a load and ultrasonic vibration to an object to be bonded, and a method for manufacturing a semiconductor device using the ultrasonic bonding apparatus.

接合対象物に荷重と超音波振動とを印加することにより接合対象物を被接合対象物へ接合する超音波接合装置が知られている（特許文献１参照）。このような超音波接合装置では、荷重と超音波振動とを接合対象物に印加する印加部が超音波ホーンに形成され、印加部が接合対象物に当接される。印加部には、接合対象物に食い込むことが可能な形状に形成された凸部が設けられている。凸部が接合対象物に食い込んでいることにより、印加部から接合対象物へ超音波振動を印加する場合に印加部と接合対象物との間で滑りが生じにくくなり、印加部から接合対象物へ超音波振動が効率良く印加され、超音波振動を利用した超音波接合の性能が向上する。   2. Description of the Related Art There is known an ultrasonic bonding apparatus that bonds a bonding target object to a bonding target object by applying a load and ultrasonic vibration to the bonding target object (see Patent Document 1). In such an ultrasonic bonding apparatus, an application unit that applies a load and ultrasonic vibration to an object to be bonded is formed in the ultrasonic horn, and the application unit is brought into contact with the object to be bonded. The application part is provided with a convex part formed in a shape that can bite into the object to be joined. When the ultrasonic vibration is applied from the application part to the object to be joined, the protrusion is biting into the object to be joined, so that slippage hardly occurs between the application part and the object to be joined. Ultrasonic vibration is efficiently applied to the surface, and the performance of ultrasonic bonding using ultrasonic vibration is improved.

図４は、超音波接合装置１００の全体構成を簡易に示す側面図である。超音波接合装置１００は、超音波振動を発生させる超音波振動発生部１０１と、発生した超音波振動が伝播される超音波ホーン１０２とを有する。超音波ホーン１０２の端部には印加部１０３が形成されている。超音波ホーン１０２は、超音波振動発生部１０１側に対して着脱可能に連結されている。印加部１０３は、超音波振動を印加する接続導体１１０に当接される部分であり、超音波ホーン１０２に一体に形成され、超音波ホーン１０２の外周部における１８０°離間した位置に２つ形成されている。   FIG. 4 is a side view simply showing the overall configuration of the ultrasonic bonding apparatus 100. The ultrasonic bonding apparatus 100 includes an ultrasonic vibration generating unit 101 that generates ultrasonic vibrations, and an ultrasonic horn 102 through which the generated ultrasonic vibrations are propagated. An application unit 103 is formed at the end of the ultrasonic horn 102. The ultrasonic horn 102 is detachably connected to the ultrasonic vibration generating unit 101 side. The application unit 103 is a part that is in contact with the connection conductor 110 that applies ultrasonic vibration, is formed integrally with the ultrasonic horn 102, and is formed at two positions 180 ° apart on the outer periphery of the ultrasonic horn 102. Has been.

印加部１０３の先端には、接続導体１１０に食い込み可能な形状に形成された複数の凸部１０４が設けられている。また、超音波ホーン１０２には、一端が印加部１０３の端面に開口する吸引通路が形成され（図示せず）、吸引通路の他端側は真空ポンプ（図示せず）に接続されている。なお、図４では、接続導体１１０が吸引されて印加部１０３の凸部１０４によって掴まれている状態を示している。印加部１０３（接続導体１１０）に対向する位置にはステージブロック１０５上に半導体チップ１１１及びリードフレーム１１２とが載置される。   A plurality of convex portions 104 formed in a shape that can bite into the connection conductor 110 are provided at the tip of the application portion 103. The ultrasonic horn 102 is formed with a suction passage (not shown) having one end opened on the end face of the application unit 103, and the other end of the suction passage is connected to a vacuum pump (not shown). FIG. 4 shows a state in which the connection conductor 110 is attracted and gripped by the convex portion 104 of the application unit 103. A semiconductor chip 111 and a lead frame 112 are placed on the stage block 105 at a position facing the application unit 103 (connection conductor 110).

図５は、接合工程における半導体チップ１１１、リードフレーム１１２、接続導体１１０と印加部１０３との位置関係を示す正面図である。リードフレーム１１２は複数のリード端子１１２ａ，１１２ｂを有し、リード端子１０２ｂに設けられた半導体チップ１１１がボンディングされている。半導体チップ１１１上には上面電極１１３が設けられている。その上から接続導体１１０が半導体チップ１１１（上面電極１１３）とリード端子１１２ａとに超音波接合されている。接続導体１１０は、半導体チップ１１１とリード端子１１２ａとの間を通電可能とする部材であり、例えば、板状、箔状に形成されたアルミニウムが用いられている。   FIG. 5 is a front view showing the positional relationship between the semiconductor chip 111, the lead frame 112, the connection conductor 110, and the application unit 103 in the bonding process. The lead frame 112 has a plurality of lead terminals 112a and 112b, and a semiconductor chip 111 provided on the lead terminal 102b is bonded thereto. An upper surface electrode 113 is provided on the semiconductor chip 111. The connection conductor 110 is ultrasonically bonded to the semiconductor chip 111 (upper surface electrode 113) and the lead terminal 112a from above. The connection conductor 110 is a member that enables energization between the semiconductor chip 111 and the lead terminal 112a. For example, aluminum formed in a plate shape or a foil shape is used.

超音波接合を行う場合には、真空ポンプを駆動させることにより印加部１０３の先端に接続導体１１０を吸着し、接続導体１１０を吸着した超音波接合装置１００を下降させ、接続導体１１０を半導体チップ１１１とリード端子１１２ａとに押付ける。ついで、超音波振動発生部１０１を駆動させ、超音波振動発生部１０１で発生した超音波振動を超音波ホーン１０２を伝播させ、印加部１０３から接続導体１１０に超音波振動を印加する。   In the case of performing ultrasonic bonding, the connection conductor 110 is adsorbed to the tip of the application unit 103 by driving a vacuum pump, the ultrasonic bonding apparatus 100 adsorbing the connection conductor 110 is lowered, and the connection conductor 110 is attached to the semiconductor chip. 111 and the lead terminal 112a. Next, the ultrasonic vibration generating unit 101 is driven, the ultrasonic vibration generated by the ultrasonic vibration generating unit 101 is propagated through the ultrasonic horn 102, and the ultrasonic vibration is applied from the applying unit 103 to the connection conductor 110.

これにより、凸部１０４が接続導体１１０に食い込み、この食い込みにより超音波振動が印加される場合の印加部１０３と接続導体１１０との間の滑りが防止され、接続導体１１０に対して超音波振動が効率良く印加される。このため、半導体チップ１１１及びリード端子１１２ａに対する接続導体１１０の超音波接合を短時間で行うことができ、しかも、接合状態の品質を高めることができる。
特開２０００−６８３２７号公報 As a result, the convex portion 104 bites into the connection conductor 110, and slipping between the application portion 103 and the connection conductor 110 when ultrasonic vibration is applied by this biting is prevented, and the ultrasonic vibration is applied to the connection conductor 110. Is efficiently applied. For this reason, the ultrasonic bonding of the connection conductor 110 to the semiconductor chip 111 and the lead terminal 112a can be performed in a short time, and the quality of the bonded state can be improved.
JP 2000-68327 A

しかしながら、上述したような接合方法では図６に示すような弊害が生ずるおそれがある。すなわち、図６は、接合対象物である接続導体１１０と被接合対象物であるリード端子１１２ａとの接続状態を部分的に拡大して示す模式図である。図６に現われているように、接続導体１１０とリード端子１１２ａとの間において凸部１０４の直下では接合されているが、凸部１０４と凸部１０４との間では確実な接合が行われず接合されない領域（空隙Ｓ）が発生してしまう可能性があった。   However, the joining method as described above may cause a harmful effect as shown in FIG. That is, FIG. 6 is a schematic diagram showing a partially enlarged connection state between the connection conductor 110 that is the bonding target and the lead terminal 112a that is the bonding target. As shown in FIG. 6, the connection conductor 110 and the lead terminal 112 a are joined immediately below the convex portion 104, but the convex portion 104 and the convex portion 104 are not securely joined and joined. There is a possibility that a region (gap S) that is not formed is generated.

接合対象物と被接合対象物とが接合されるメカニズムは、凸部１０４で接続導体１１０を押しつぶし接続導体１１０が塑性変形することで接続導体１１０の清浄な金属面が露出することになってこの面とリード端子１１２ａとが接続されるというものである。但し、接続導体１１０を凸部１０４で加圧すると隣接する凸部１０４との間にも接続導体１１０の清浄な金属面が露出することになり、この部分がリード端子１１２ａから離間し空隙Ｓを生じさせることになる。   The mechanism by which the object to be joined and the object to be joined are joined is that the connecting conductor 110 is crushed by the convex portion 104 and the connecting conductor 110 is plastically deformed to expose a clean metal surface of the connecting conductor 110. The surface and the lead terminal 112a are connected. However, when the connecting conductor 110 is pressed by the convex portion 104, a clean metal surface of the connecting conductor 110 is exposed between the adjacent convex portions 104, and this portion is separated from the lead terminal 112a and the gap S is formed. Will be generated.

特に、図６の模式図に示すように凸部１０４が大きく、凸部１０４が接合されている印加部１０３の印加面から先端までの高さｈが高いほど、接続導体１１０を押しつぶして接合させることになるため、空隙Ｓが発生する可能性が高くなると思われる。   In particular, as shown in the schematic diagram of FIG. 6, the connection conductor 110 is crushed and joined as the projection 104 is large and the height h from the application surface to the tip of the application unit 103 to which the projection 104 is joined is higher. Therefore, it is considered that the possibility that the void S is generated is increased.

本発明は上記課題を解決するためになされたものであり、本発明の目的は、生産性及び生産効率の向上を可能とする超音波接合装置及びこの超音波接合装置を使用した半導体装置の製造方法を提供することである。   The present invention has been made to solve the above-described problems, and an object of the present invention is to manufacture an ultrasonic bonding apparatus capable of improving productivity and production efficiency and a semiconductor device using the ultrasonic bonding apparatus. Is to provide a method.

本発明の実施の形態に係る第１の特徴は、超音波接合装置において、超音波振動を発生させる超音波振動発生部と、超音波振動発生部から超音波振動が伝播される棒形状の超音波ホーンと、超音波ホーンに取り付けられ、接合対象物に当接される印加面を有する印加ブロックと、を備え、印加面には、接合対象物を掴む複数の凸部が設けられており、凸部の前記印加面から先端までの高さを示す値は、接合対象物の厚みを示す値よりも小さい。   A first feature according to an embodiment of the present invention is that in an ultrasonic bonding apparatus, an ultrasonic vibration generating unit that generates ultrasonic vibrations, and a rod-shaped supersonic wave that transmits ultrasonic vibrations from the ultrasonic vibration generating unit. An sonic horn, and an application block that is attached to the ultrasonic horn and has an application surface that comes into contact with the object to be joined, and the application surface is provided with a plurality of convex portions for gripping the object to be joined, The value indicating the height from the application surface to the tip of the convex portion is smaller than the value indicating the thickness of the object to be joined.

本発明の実施の形態に係る第２の特徴は、超音波振動を発生させる超音波振動発生部と、超音波振動発生部から超音波振動が伝播される棒形状の超音波ホーンと、超音波ホーンに取り付けられ、接合対象物に当接される印加面を有する印加ブロックと、を備え、この印加面には、接合対象物を掴む複数の凸部が設けられており、凸部の印加面から先端までの高さを示す値は、接続導体の厚みを示す値よりも小さいことを特徴とする超音波接合装置を用いた半導体装置の製造方法において、超音波ホーンに取り付けられ超音波振動を印加する印加部の印加面に設けられた複数の凸部に接合対象物を真空吸着させる工程と、接合対象物を被接合対象物に当接させ荷重を印加する工程と、接合対象物と被接合対象物との間に隙間を生じさせることなく接合対象物に超音波振動を印加して両者を接合する工程とを備える。   A second feature according to the embodiment of the present invention is that an ultrasonic vibration generating unit that generates ultrasonic vibrations, a rod-shaped ultrasonic horn that transmits ultrasonic vibrations from the ultrasonic vibration generating unit, and an ultrasonic wave An application block having an application surface that is attached to the horn and abuts against the object to be joined, and the application surface is provided with a plurality of protrusions for gripping the object to be joined. The value indicating the height from the tip to the tip is smaller than the value indicating the thickness of the connecting conductor. A step of vacuum adsorbing the object to be welded to a plurality of convex portions provided on an application surface of the application unit to be applied; a step of bringing the object to be welded into contact with the object to be welded; and applying a load; Do not create a gap between the objects to be joined. And a step of bonding them together by applying ultrasonic vibration to the bonding target.

本発明によれば、生産性及び生産効率の向上を可能とする超音波接合装置及びこの超音波接合装置を使用した半導体装置の製造方法を提供することができる。   According to the present invention, it is possible to provide an ultrasonic bonding apparatus capable of improving productivity and production efficiency and a method for manufacturing a semiconductor device using the ultrasonic bonding apparatus.

以下、本発明の実施の形態について図面を参照して詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

図１及び図２に示すように、本発明の実施の形態に係る超音波接合装置を含む半導体装置の製造装置Ａは、半導体チップ１とリードフレーム２のリード端子２ａとに接合対象物である接続導体３を超音波接合し、半導体チップ１とリード端子２ａとを接続導体３により接続した半導体装置を製造する場合に使用される。この製造装置Ａは、ベース１１と、ベース１１の一端側に取付けられた水平方向移動テーブル１２と、ベース１１の他端側に取付けられたステージブロック１３とを有している。   As shown in FIGS. 1 and 2, a semiconductor device manufacturing apparatus A including an ultrasonic bonding apparatus according to an embodiment of the present invention is an object to be bonded to a semiconductor chip 1 and a lead terminal 2 a of a lead frame 2. It is used when manufacturing a semiconductor device in which the connecting conductor 3 is ultrasonically bonded and the semiconductor chip 1 and the lead terminal 2a are connected by the connecting conductor 3. The manufacturing apparatus A includes a base 11, a horizontal movement table 12 attached to one end side of the base 11, and a stage block 13 attached to the other end side of the base 11.

半導体チップ１とリードフレーム２とは、ステージブロック１３上に載置されている。半導体チップ１の上には上面電極１ａが設けられている。リードフレーム２は複数のリード端子２ａ，２ｂを有し、リード端子２ｂ上に半導体チップ１がボンディングされている。接続導体３は、半導体チップ１とリード端子２ａとの間を通電可能とする部材であり、例えば、板状、箔状に形成されたアルミニウムが用いられている。ここで、接合対象物は接続導体３であり、この接続導体３が接続される被接合対象物は、例えば、半導体チップ１でありリード端子２ａである。   The semiconductor chip 1 and the lead frame 2 are placed on the stage block 13. An upper surface electrode 1 a is provided on the semiconductor chip 1. The lead frame 2 has a plurality of lead terminals 2a and 2b, and the semiconductor chip 1 is bonded onto the lead terminals 2b. The connection conductor 3 is a member that enables energization between the semiconductor chip 1 and the lead terminal 2a. For example, aluminum formed in a plate shape or a foil shape is used. Here, the bonding target is the connection conductor 3, and the bonding target to which the connection conductor 3 is connected is, for example, the semiconductor chip 1 and the lead terminal 2a.

水平方向移動テーブル１２は、水平方向における直交する２方向へ移動可能とされている。水平方向移動テーブル１２上には、水平方向と直交する上向き方向に延出するガイド１４が固定されている。ガイド１４には、水平方向移動テーブル１２の移動方向と直交する方向である上下方向に移動可能に上下方向移動テーブル１５が取付けられている。上下方向移動テーブル１５には保持部１６が取付けられ、保持部１６には超音波接合装置２０が着脱可能に保持されている。   The horizontal movement table 12 is movable in two orthogonal directions in the horizontal direction. A guide 14 extending in an upward direction perpendicular to the horizontal direction is fixed on the horizontal movement table 12. A vertical movement table 15 is attached to the guide 14 so as to be movable in the vertical direction, which is a direction orthogonal to the movement direction of the horizontal movement table 12. A holding unit 16 is attached to the vertical movement table 15, and an ultrasonic bonding apparatus 20 is detachably held on the holding unit 16.

超音波接合装置２０は、超音波振動を発生させる超音波振動発生部２１と、超音波振動発生部２１で発生した超音波振動が伝播される超音波ホーン２２と、超音波ホーン２２に着脱可能に取付けられる印加ブロック２３と、印加ブロック２３を超音波ホーン２２に固定する止めネジ２４とを有している。   The ultrasonic bonding apparatus 20 is attachable to and detachable from an ultrasonic vibration generator 21 that generates ultrasonic vibrations, an ultrasonic horn 22 that propagates ultrasonic vibrations generated by the ultrasonic vibration generator 21, and the ultrasonic horn 22. And a set screw 24 for fixing the application block 23 to the ultrasonic horn 22.

超音波ホーン２２は、超音波振動発生部２１側に対して着脱可能に連結されている。印加ブロック２３の一端には超音波振動を印加する接続導体３に当接される部分である印加部２５が設けられている。   The ultrasonic horn 22 is detachably connected to the ultrasonic vibration generating unit 21 side. One end of the application block 23 is provided with an application unit 25 that is a part that comes into contact with the connection conductor 3 that applies ultrasonic vibration.

なお、超音波振動発生部２１に対して連結される超音波ホーン２２、或いは、超音波ホーン２３に固定される印加ブロック２３は、それぞれその着脱の可否は任意に設定することが可能である。   It should be noted that the application block 23 fixed to the ultrasonic horn 22 or the ultrasonic horn 23 connected to the ultrasonic vibration generating unit 21 can be arbitrarily set as to whether it can be attached or detached.

印加部２５の先端には、接続導体３を掴むことができる形状に形成された複数の凸部２６が設けられている。また、超音波ホーン２２には、一端が印加部２５の端面に開口する吸引通路２７が形成され、吸引通路の他端側は真空ポンプ（図示せず）に接続されている。なお、図１では、接続導体３が吸引されて印加部２５の凸部２６によって掴まれている状態を示している。   A plurality of convex portions 26 formed in a shape capable of gripping the connection conductor 3 are provided at the tip of the application portion 25. Further, the ultrasonic horn 22 is formed with a suction passage 27 having one end opened on the end face of the application unit 25, and the other end side of the suction passage is connected to a vacuum pump (not shown). FIG. 1 shows a state in which the connection conductor 3 is attracted and gripped by the convex portion 26 of the application unit 25.

このような構成において、半導体チップ１とリード端子２ａとに接続導体３を超音波接合した半導体装置を製造する場合には、まず、ステージブロック１３上にリードフレーム２と半導体チップ１とをセットする。ついで、水平方向移動テーブル１２と上下方向移動テーブル１５とを駆動させることにより超音波接合装置２０を水平方向及び上下方向に移動させ、印加ブロック２３の印加部２５を接続導体供給部（図示せず）に載置されている接続導体３に当接させ、真空ポンプを駆動させる。真空ポンプが駆動されることにより、吸引通路２７を介して真空ポンプ側に向かう空気の流れが発生し、接続導体３が印加部２５に真空吸着される。   In such a configuration, when manufacturing a semiconductor device in which the connection conductor 3 is ultrasonically bonded to the semiconductor chip 1 and the lead terminal 2a, first, the lead frame 2 and the semiconductor chip 1 are set on the stage block 13. . Next, the horizontal movement table 12 and the vertical movement table 15 are driven to move the ultrasonic bonding apparatus 20 in the horizontal direction and the vertical direction, and the application unit 25 of the application block 23 is connected to a connection conductor supply unit (not shown). ), And the vacuum pump is driven. By driving the vacuum pump, an air flow toward the vacuum pump side is generated through the suction passage 27, and the connection conductor 3 is vacuum-adsorbed to the application unit 25.

印加部２５に接続導体３を真空吸着した後、水平方向移動テーブル１２と上下方向移動テーブル１５とを駆動させ、真空吸着した接続導体３をステージブロック１１の上方に搬送する。そして、搬送した接続導体３を図２に示すように半導体チップ１とリード端子２ｂとに当接させ、接続導体３に下向き（図２に示す破線の矢印方向）に荷重を印加する。この荷重の印加により、凸部２６が接続導体３を掴む。   After the connection conductor 3 is vacuum-sucked by the application unit 25, the horizontal movement table 12 and the vertical movement table 15 are driven, and the vacuum-sucking connection conductor 3 is conveyed above the stage block 11. Then, the transported connection conductor 3 is brought into contact with the semiconductor chip 1 and the lead terminal 2b as shown in FIG. 2, and a load is applied to the connection conductor 3 downward (in the direction of the broken arrow shown in FIG. 2). By the application of this load, the convex portion 26 grips the connection conductor 3.

本発明の実施の形態における凸部２６は、接続導体３に食い込んで押しつぶすことで半導体チップ１、リードフレーム２と接続させるために設けられているのではなく、次に説明するように接続導体３に超音波振動を効率良く印加し、超音波を印加した際に印加部２５が接続導体３から外れないようにするために設けられている。   The convex portion 26 in the embodiment of the present invention is not provided to connect to the semiconductor chip 1 and the lead frame 2 by biting into the connection conductor 3 and crushing, but as described below, the connection conductor 3. It is provided to efficiently apply ultrasonic vibrations and prevent the application section 25 from being detached from the connection conductor 3 when ultrasonic waves are applied.

接続導体３に予め設定した値の荷重を印加した後、超音波振動発生部２１において超音波振動を発生させる。発生した超音波振動は、超音波ホーン２２から印加ブロック２３へと伝播され、印加ブロック２３の印加部２５から図２に示す実線の矢印方向に接続導体３へと印加される。半導体チップ１とリード端子２ａとに接触している接続導体３に荷重が印加され、さらに、この接続導体３に超音波振動が印加されることにより、半導体チップ１とリード端子２ａとに対して接続導体３が超音波接合される。   After applying a load having a preset value to the connection conductor 3, ultrasonic vibration is generated in the ultrasonic vibration generator 21. The generated ultrasonic vibration is propagated from the ultrasonic horn 22 to the application block 23 and applied from the application unit 25 of the application block 23 to the connection conductor 3 in the direction of the solid line arrow shown in FIG. A load is applied to the connection conductor 3 that is in contact with the semiconductor chip 1 and the lead terminal 2a, and further, ultrasonic vibration is applied to the connection conductor 3, whereby the semiconductor chip 1 and the lead terminal 2a are applied. The connecting conductor 3 is ultrasonically bonded.

印加部２５から接続導体３に超音波振動を印加する場合に、凸部２６が接続導体３を掴んでいることにより、印加部２５と接続導体３との間での滑りの発生が防止され、接続導体３に対して超音波振動が効率良く印加される。   When applying ultrasonic vibration from the application unit 25 to the connection conductor 3, the convex portion 26 holds the connection conductor 3, thereby preventing slippage between the application unit 25 and the connection conductor 3. Ultrasonic vibration is efficiently applied to the connection conductor 3.

加圧されつつ超音波振動が接続導体３に効率よく印加されると、被接合対象物である半導体チップ１及びリード端子２ａとの間で接続導体３が擦れる。このことによって接続導体３の清浄な金属面が露出することになってこの露出された面とリード端子２ａとが接続される。   When the ultrasonic vibration is efficiently applied to the connection conductor 3 while being pressurized, the connection conductor 3 is rubbed between the semiconductor chip 1 and the lead terminal 2a which are objects to be joined. As a result, a clean metal surface of the connection conductor 3 is exposed, and the exposed surface is connected to the lead terminal 2a.

上述のように加圧することで接合対象物の清浄な面を露出させるようにすると空隙Ｓが発生する可能性があるが、本発明の実施の形態における接合方法を採用すれば、空隙を生じさせることなく接続導体３の半導体チップ１及びリード端子２ａとの間における接合面の全面にわたって万遍なく清浄な面を露出させることができる。そのため、図３の接続導体３とリード端子２ａとの接続状態を部分的に拡大して示す模式図に現われているように、接続導体３とリード端子２ａとの間には空隙は生じない。   If the clean surface of the object to be joined is exposed by pressurizing as described above, the gap S may be generated, but if the joining method according to the embodiment of the present invention is adopted, the gap is generated. It is possible to uniformly expose a clean surface over the entire bonding surface between the semiconductor chip 1 and the lead terminal 2a of the connection conductor 3. Therefore, there is no gap between the connection conductor 3 and the lead terminal 2a, as shown in the schematic view partially enlarged showing the connection state between the connection conductor 3 and the lead terminal 2a in FIG.

なお、本発明の実施における凸部２６の形状は、多角錐台形状、円錐台形状、半球状、或いはこれらを組み合わせた形状等、どのような形状を採用しても良い。また、寸法についても、接続導体３への加圧を主体にして接合するわけではないことから、接続導体３の厚みを示す値よりもその高さを示す値（図３に示す高さＨ）が小さく、超音波振動を接続導体３に印加する際に凸部２６が接続導体３から外れてしまわない大きさであれば足りる。例えば、発明者が実験において用いた凸部を例に挙げてその大きさを説明すると、その凸部の形状は四角錐台形状である。そして対向する２辺の中心を通るように切断し、その断面を見た場合、平行する上辺と下辺の長さはそれぞれ５０ミクロン、８０ミクロンであって、上辺と下辺との間の高さ（図３に示す高さＨ）は３０ミクロンであった。   The shape of the convex portion 26 in the implementation of the present invention may be any shape such as a polygonal frustum shape, a truncated cone shape, a hemispherical shape, or a combination of these. In addition, since the dimensions are not mainly bonded to the connecting conductor 3, the value indicating the height of the connecting conductor 3 is higher than the value indicating the thickness of the connecting conductor 3 (height H shown in FIG. 3). Is small, and it is sufficient that the convex portion 26 does not come off the connection conductor 3 when applying ultrasonic vibration to the connection conductor 3. For example, when the size of the convex portion used by the inventors in the experiment is described as an example, the shape of the convex portion is a quadrangular frustum shape. Then, when cutting through the centers of the two opposing sides and viewing the cross section, the lengths of the parallel upper and lower sides are 50 microns and 80 microns, respectively, and the height between the upper and lower sides ( The height H) shown in FIG. 3 was 30 microns.

このように、接合対象物を掴む凸部の大きさを超音波振動を印加するにあたって外れないような大きさとすることで、加圧によってではなく印加された超音波振動によって接合対象物と被接合対象物とが擦られることになり接合対象物の清浄な面が露出されることになるため、生産性及び生産効率の向上を可能とすることのできる超音波接合装置及びこの超音波接合装置を使用した半導体装置の製造方法を提供することができる。   In this way, by setting the size of the convex portion that grips the object to be joined so that it does not come off when applying the ultrasonic vibration, the object to be joined and the object to be joined by the applied ultrasonic vibration rather than by pressurization. Since an object is rubbed and a clean surface of the object to be bonded is exposed, an ultrasonic bonding apparatus capable of improving productivity and production efficiency and the ultrasonic bonding apparatus are provided. A method of manufacturing a used semiconductor device can be provided.

なお、この発明は、上記実施の形態そのままに限定されるものではなく、実施段階ではその要旨を逸脱しない範囲で構成要素を変形して具体化できる。また、上記実施の形態に開示されている複数の構成要素を適宜組み合わせることにより種々の発明を形成できる。例えば、実施の形態に示される全構成要素から幾つかの構成要素を削除してもよい。更に、異なる実施の形態に亘る構成要素を適宜組み合わせても良い。   Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the constituent elements without departing from the scope of the invention in the implementation stage. Various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the above embodiments. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, you may combine the component covering different embodiment suitably.

本発明の実施の形態における超音波接合装置を含む半導体装置の製造装置の概略構造を示す側面図である。It is a side view which shows schematic structure of the manufacturing apparatus of the semiconductor device containing the ultrasonic bonding apparatus in embodiment of this invention. 本発明の実施の形態の接合工程における半導体チップ、リードフレーム、接続導体と印加部との位置関係を示す正面図である。It is a front view which shows the positional relationship of a semiconductor chip, a lead frame, a connection conductor, and an application part in the joining process of embodiment of this invention. 本発明の実施の形態における接続導体とリード端子との接続状態を部分的に拡大して示す模式図である。It is a schematic diagram which expands partially and shows the connection state of the connection conductor and lead terminal in embodiment of this invention. 従来の超音波接合装置の概略構造を示す側面図である。It is a side view which shows schematic structure of the conventional ultrasonic bonding apparatus. 従来の接合工程における半導体チップ、リードフレーム、接続導体と印加部との位置関係を示す正面図である。It is a front view which shows the positional relationship of the semiconductor chip, lead frame, connecting conductor, and application part in the conventional joining process. 従来の接続導体とリード端子との接続状態を部分的に拡大して示す模式図である。It is a schematic diagram which expands partially and shows the connection state of the conventional connection conductor and lead terminal.

符号の説明Explanation of symbols

１…半導体チップ、２…リードフレーム、３…接続導体、１１…ベース、１２…水平方向移動テーブル、１３…ステージブロック、１４…ガイド、１５…上下方向移動テーブル、１６…保持部、２０…超音波接合装置、２１…超音波振動発生部、２２…超音波ホーン、２３…印加ブロック、２４…止めネジ、２５…印加部、２６…凸部、Ａ…半導体装置の製造装置。   DESCRIPTION OF SYMBOLS 1 ... Semiconductor chip, 2 ... Lead frame, 3 ... Connection conductor, 11 ... Base, 12 ... Horizontal movement table, 13 ... Stage block, 14 ... Guide, 15 ... Vertical movement table, 16 ... Holding part, 20 ... Super Sonic bonding device, 21 ... ultrasonic vibration generating unit, 22 ... ultrasonic horn, 23 ... application block, 24 ... set screw, 25 ... application unit, 26 ... convex portion, A ... semiconductor device manufacturing apparatus.

Claims (2)

超音波振動を発生させる超音波振動発生部と、
前記超音波振動発生部から超音波振動が伝播される棒形状の超音波ホーンと、
前記超音波ホーンに取り付けられ、接合対象物に当接される印加面を有する印加ブロックと、を備え、
前記印加面には、前記接合対象物を掴む複数の凸部が設けられており、前記凸部の前記印加面から先端までの高さを示す値は、前記接続導体の厚みを示す値よりも小さいことを特徴とする超音波接合装置。 An ultrasonic vibration generator for generating ultrasonic vibrations;
A rod-shaped ultrasonic horn through which ultrasonic vibration is propagated from the ultrasonic vibration generating unit;
An application block that is attached to the ultrasonic horn and has an application surface that is brought into contact with an object to be joined;
The application surface is provided with a plurality of convex portions for gripping the object to be joined, and the value indicating the height of the convex portion from the application surface to the tip is greater than the value indicating the thickness of the connection conductor. Ultrasonic bonding apparatus characterized by being small. 超音波振動を発生させる超音波振動発生部と、前記超音波振動発生部から超音波振動が伝播される棒形状の超音波ホーンと、前記超音波ホーンに取り付けられ、接合対象物に当接される印加面を有する印加ブロックと、を備え、前記印加面には、前記接合対象物を掴む複数の凸部が設けられており、前記凸部の前記印加面から先端までの高さを示す値は、前記接続導体の厚みを示す値よりも小さいことを特徴とする超音波接合装置を用いた半導体装置の製造方法において、
超音波ホーンに取り付けられ超音波振動を印加する印加部の印加面に設けられた複数の凸部に接合対象物を真空吸着させる工程と、
前記接合対象物を被接合対象物に当接させ荷重を印加する工程と、
前記接合対象物と前記被接合対象物との間に隙間を生じさせることなく前記接合対象物に超音波振動を印加して両者を接合する工程と、
を備えることを特徴とする半導体装置の製造方法。 An ultrasonic vibration generating unit for generating ultrasonic vibration, a rod-shaped ultrasonic horn through which ultrasonic vibration is propagated from the ultrasonic vibration generating unit, and attached to the ultrasonic horn and brought into contact with the object to be joined An application block having an application surface, wherein the application surface is provided with a plurality of convex portions for gripping the object to be joined, and a value indicating a height from the application surface to the tip of the convex portion. Is a method of manufacturing a semiconductor device using an ultrasonic bonding apparatus, characterized in that it is smaller than a value indicating the thickness of the connection conductor,
A step of attaching the object to be vacuum-adsorbed to a plurality of convex portions provided on an application surface of an application unit that is attached to an ultrasonic horn and applies ultrasonic vibration;
Applying the load by bringing the object to be bonded into contact with the object to be bonded; and
Applying ultrasonic vibration to the joining object without causing a gap between the joining object and the object to be joined, and joining them together;
A method for manufacturing a semiconductor device, comprising:
JP2008068205A 2008-03-17 2008-03-17 Ultrasonic wave bonding apparatus, and method of manufacturing semiconductor apparatus using the same Pending JP2009224601A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013105361A1 (en) * 2012-01-12 2013-07-18 日立マクセル株式会社 Ultrasonic welding tip, ultrasonic welding machine, and method for producing battery

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006081106A1 (en) * 2005-01-27 2006-08-03 Orthodyne Electronics Corporation Ribbon bonding tool and process
JP2007220806A (en) * 2006-02-15 2007-08-30 Toshiba Corp Ultrasonic bonding device, and method for manufacturing semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006081106A1 (en) * 2005-01-27 2006-08-03 Orthodyne Electronics Corporation Ribbon bonding tool and process
JP2007220806A (en) * 2006-02-15 2007-08-30 Toshiba Corp Ultrasonic bonding device, and method for manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013105361A1 (en) * 2012-01-12 2013-07-18 日立マクセル株式会社 Ultrasonic welding tip, ultrasonic welding machine, and method for producing battery

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