TWI584388B - Semiconductor device manufacturing method - Google Patents

Description

Semiconductor device manufacturing method

The present invention relates to a method of fabricating a semiconductor device.

The semiconductor device is manufactured by a wire bonding process for electrically connecting (electrodes) of a semiconductor element and a lead frame by wiring, and the electrode of the semiconductor element is disposed on an insulating substrate on which a circuit pattern is formed. The lead frame is a case provided on the insulating substrate.

This wire bonding process is to cut off the remaining wires other than the connection portions by the cutter once the connection of the semiconductor element and the lead frame is completed. However, when the wiring to be bonded to the semiconductor element side is cut, there is a fear that the surface of the semiconductor element is damaged when the wiring of the cutter is cut. Then, there is a technique in which the cutting position of the wiring is floated in the air, and the junction of the semiconductor element and the wiring is not damaged to cut the wiring, and the wiring is cut (see, for example, Patent Document 1).

[Advanced technical literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2002-026058

However, in the method of cutting the wiring of Patent Document 1, it is feared that the tip (and the burr) is formed on the cut surface of the wire in accordance with the breaking method. When the wire bonding process is performed by the wire having the pointed end, when the wire is joined to the object to be connected, the tip causes damage to the joint depending on the direction or location of the tip.

The present invention has been made in view of such circumstances, and an object of the invention is to provide a method of manufacturing a semiconductor device in which a cut-off wiring suppresses generation of a tip.

According to one aspect of the present invention, there is provided a method of manufacturing a semiconductor device comprising: a bonding process for bonding a wiring to a conductive member included in a semiconductor device; and a cut forming process to be bonded to the foregoing The cutting position of the conductive member outside the joining area of the wiring is half-cut, and the wiring forms a notch; and the cutting process is performed by cutting the wire at the cutting position.

According to the disclosed technique, since the generation of the tip of the cut portion of the cut wire is suppressed, the pressure of the conductive member for joining such a wire can be reduced.

1‧‧‧Electrical components

2‧‧‧Wiring

2a‧‧‧ cut face

3‧‧‧Connected field

4‧‧‧ cut position

5‧‧‧cuts

6‧‧‧Vibration components

FIG. 1 is a view for explaining a wire bonding process included in a method of manufacturing a semiconductor device according to the first embodiment.

2 is a view for explaining a reference example of a wire bonding process included in a method of manufacturing a semiconductor device.

Fig. 3 is a partial view showing an example of a wire bonding apparatus according to a second embodiment;

4 is a view for explaining an example of a method of manufacturing the semiconductor device of the second embodiment.

Fig. 5 is a view for explaining connection of wiring of a wire bonding process according to a second embodiment;

Fig. 6 is a view for explaining the cutting of the wire bonding work of the second embodiment;

FIG. 7 is a view for explaining an example of a method of manufacturing the semiconductor device of the third embodiment.

The embodiment will be described with reference to the drawings.

[First Embodiment]

The wire bonding process included in the method of manufacturing a semiconductor device will be described with reference to FIG.

FIG. 1 is a view for explaining a wire bonding process included in a method of manufacturing a semiconductor device according to the first embodiment.

In addition, FIG. 1(A) to FIG. 1(D) show the wire bonding process in time series.

First, the wiring 2 is bonded to the conductive member 1 (FIG. 1(A)) included in the semiconductor device.

The wire 2 is joined to the conductive member 1 in its joint region 3. In addition, the conductive member 1 is made of a metal or the like, and is, for example, an electrode of a semiconductor element included in a semiconductor device, a lead frame, a circuit pattern formed on an insulating substrate on which a semiconductor element is disposed, or the like.

Further, the wire 2 is one end of the wire 2 which is first joined to another conductive member (not shown), and then joined to the conductive member 1 in the bonding region 3 as shown in Fig. 1(A). Thereby, the wiring 2 realizes an electrical connection between the conductive members.

Next, the cutting position 4 outside the joint area 3 of the wire 2 joined to the conductive member 1 is half-cut to form the cut 5 (Fig. 1(B)).

Next, the cut 5 is vibrated, and the wire 2 is cut at the cutting position 4 (Fig. 1(C)).

In order to vibrate the incision 5, for example, the tip end portion of the vibrating member 6 vibrating at a predetermined number of vibrations is brought into contact with the inside of the incision 5. The cut 5 of the wire 2 is subjected to fatigue under repeated load by vibration from the vibrating member 6. That is, the sliding of the crystal grains constituting the cut 5 of the wire 2 occurs, and cracks are generated from the cut 5 to the conductive member 1. When the cut 5 receives vibration from the vibrating member 6, the crack spreads toward the conductive member 1, and finally the wire 2 is broken at the cutting position 4 and cut (Fig. 1(D)).

As a result, the wire 2 is not cut by the fact that the cut surface 2a has a pointed end.

Here, a description will be given of a reference example of the wire bonding process included in the manufacturing method of such a semiconductor device, with reference to FIG.

2 is a view for explaining a reference example of a wire bonding process included in a method of manufacturing a semiconductor device.

2(A) to 2(C) show the time-series display of the wire bonding process different from that of FIG. 1 which is implemented in the manufacturing method of the semiconductor device. The same components as those in FIG. 1 are denoted by the same reference numerals, and the description thereof will be omitted.

First, as in FIG. 1(A), the wiring 2 is bonded to the conductive member 1 (FIG. 2(A)) included in the semiconductor device.

Next, for example, the cutter 6a is moved in the arrow direction (from the upper side in FIG. 2 toward the conductive member 1 side) to cut the cutting position 4 outside the joint area 3 of the wire 2 joined to the conductive member 1, and Cut off the wiring 2 (Fig. 2(B)).

At this time, although the wire 2 is cut at the cutting position 4, the place of the conductive member 1 corresponding to the cutting position 4 may be damaged by the cutter 6a. In particular, when the conductive member 1 is an electrode of a semiconductor element, once the electrode of the semiconductor element is damaged from the cutter 6a, the semiconductor layer under the electrode is also damaged, thereby deteriorating the characteristics of the semiconductor element.

Further, the wire 2 is cut by the cutter 6a moving to the side of the conductive member 1 with respect to the wire 2. Therefore, the cut surface 2a of the wire 2 is a pointed end 2b along the cutting direction of the cutter 6a (Fig. 2(C)).

In particular, when the wiring 2 is made of a relatively soft material such as aluminum, such a pointed end 2b is likely to be generated.

When the wire bonding process is performed by the wire 2 in which the tip 2b is formed on the cut surface 2a, a gap is formed between the wire 2 and the conductive member 1 due to the tip 2b, so that the wire 2 and the conductive member 1 are feared. The entanglement is reduced. Further, when the conductive member 1 is an electrode of a semiconductor element, when the electrode receives pressure by the tip 2b, the semiconductor layer under the electrode is damaged, and thus the characteristics of the semiconductor element are deteriorated.

Then, in the wire bonding process performed in the method of manufacturing the semiconductor device of the first embodiment, as shown in FIG. 1, the cutting position 4 outside the bonding region 3 of the connection 2 of the conductive member 1 is bonded. The cut 5 is formed by half cutting, and the cut 5 is given vibration, so that the wire 2 can be cut at the cut position 4.

Since the wire 2 is half-cut, it is electrically conductive when cut. The damage of the member 1 is reduced. Further, when the cut 5 formed on the wire 2 is vibrated, the vicinity of the cut 5 is fatigued, and the wire 2 is cut by the break from the cut 5. Therefore, the generation of the pointed end 2b on the cut surface 2a of the wire 2 (at least toward the conductive member 1 side) is suppressed. When the wire bonding process is performed on the wire 2 having no pointed end 2b on the cut surface 2a as described above, the wire 2 can be appropriately joined to the conductive member 1. Further, even if the conductive member 1 is an electrode of a semiconductor element, there is no case where the electrode pressure is applied, and deterioration of characteristics of the semiconductor element is suppressed.

In addition, when the joining region 3 is also vibrated by the vibration of the cut 5 of the cutting position 4, the wire 2 is peeled off from the conductive member 1. Therefore, it is preferable that the vibration of the incision 5 is the number of vibrations in which the wire 2 is fatigued by the incision 5, and the joining field 3 is not peeled off from the electroconductive member 1 by vibration. Alternatively, it is preferable that the cutting position 4 is set to a position away from the joining region 3 so that the joining region 3 is not affected by the vibration of the cut 5 .

[Second Embodiment]

In the second embodiment, the wire bonding process to be performed in the method of manufacturing the semiconductor device of the first embodiment will be described in more detail.

First, an example of a wire bonding apparatus used in a wire bonding process will be described using FIG.

Fig. 3 is a partial view showing an example of a wire bonding apparatus according to a second embodiment;

In addition, FIG. 3(A) shows the wire bonding apparatus 10 FIG. 3(B) is a view showing a distal end portion of the bonding tool 11 of the wire bonding apparatus 10 seen in the direction of the arrow S of FIG. 3(A).

The wire bonding apparatus 10 is provided with a bonding tool 11, a wire guiding portion 12, a cutter 13, and a clamping mechanism 14 at a front end portion thereof as shown in, for example, FIG. 3(A).

The bonding tool 11 is provided with an ultrasonic vibrator 15 that generates ultrasonic waves. The tip end portion of the bonding tool 11 is formed with a groove portion 11a along the wiring W as shown in Fig. 3(B). Further, the ultrasonic vibrator 15 is, for example, an ultrasonic wave that oscillates at a frequency of 60 kHz to 150 kHz. Further, the bonding tool 11 is moved in the up and down direction (in FIG. 3) along the arrow Y1. When the bonding tool 11 is supplied as described later, when the wire W is supplied, the bonding tool 11 moves to the lower direction (in FIG. 3), and the wire W is held by the groove portion 11a, and is pressed to the predetermined bonding position. The bonding tool 11 vibrates ultrasonically while receiving the ultrasonic wave from the ultrasonic vibrator 15 while pressing the wire W, thereby bonding the wire W at a predetermined joint. When the bonding tool 11 is thus bonded to the predetermined bonding position, the vibration from the ultrasonic vibrator 15 is stopped, and moved to the upper direction (in FIG. 3) to return to the original position.

The wiring guide 12 accommodates the wiring W inside, and guides the wiring W to the outside. The cutter 13 is moved in the vertical direction (in FIG. 3) along the arrow Y2 independently of the bonding tool 11, and the connection of the wiring W to which the object is connected is completed, and the unnecessary wiring W is cut. Further, after the cutter 13 is formed, the cutter 13 is in contact with the ultrasonic vibrator 15 and is accepted. The ultrasonic wave from the ultrasonic vibrator 15 is ultrasonically vibrated, and the tip end portion of the cutter 13 is brought into contact with the cut.

The clamp mechanism 14 is provided in the wire guide portion 12, holds the wire W guided by the wire guide portion 12, or is opened, and the wire W is guided by the wire guide portion 12 to control the supply of the wire W from the wire guide portion 12.

Next, an example of a method of manufacturing a semiconductor device using such a wire bonding apparatus 10 will be described with reference to FIG.

4 is a view for explaining an example of a method of manufacturing the semiconductor device of the second embodiment.

4(A) to 4(D) show each of the processes performed in the manufacturing method of the semiconductor device in time series.

First, the solder 120a is placed on the upper surface of the heat radiation substrate 110 made of metal or the like. An insulating substrate 120 made of ceramics 121 is formed on the solder 120a. The ceramics 121 are formed with conductive patterns 122 and 123 formed of, for example, copper foil on the front and back surfaces. The conductive patterns 123 on the surface of the insulating substrate 120 are mounted with the semiconductor elements 131 and 132 via the solders 131a and 132a, respectively.

Heating in such a state causes each of the solders 120a, 131a, and 132a to be melted, and then cooled and resolidified. Therefore, the heat radiation substrate 110, the insulating substrate 120, and the semiconductor elements 131, 132 are integrated (FIG. 4(A)).

Further, for the semiconductor elements 131 and 132, for example, one of the switching elements may be applied, and the other may be a diode. Switching elements are for example applicable A vertical power semiconductor device such as an IGBT (Insulating Gate Bipolar Transistor) device or a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). Further, the diode is, for example, a power diode element to which an SBD (Schottky Barrier Diode), FWD (Free Wheeling Diode) element or the like is applicable.

The semiconductor elements 131 and 132 placed on the insulating substrate 120 are not limited to these two, and the necessary functions and the number of semiconductor elements can be applied in accordance with the design of the semiconductor device 100 or the like.

Next, a resin case 140 including lead frame terminals 151 and 152 for current extraction is disposed outside the heat radiation substrate 110 so as to surround the semiconductor elements 131 and 132. The lead frame terminals 151, 152 are inserted into the resin case 140, for example, as an emitter terminal and a collector terminal. The oxime adhesive 141 is preliminarily coated on the surface of the resin case 140 facing the heat-releasing substrate 110, and the resin case 140 is fitted to the outer peripheral portion of the heat-releasing substrate 110. Then, the fluorene ketone adhesive 141 is heat-hardened, and the resin case 140 is adhered to the heat release substrate 110 (Fig. 4(B)).

Next, the lead frame terminal 151 and the electrode (electrode (not shown)) of the semiconductor element 131 are electrically connected by the wire 161 by wire bonding. Similarly, by wire bonding, the semiconductor elements 131, 132 are electrically connected by the wiring 162, and the lead frame terminal 152 and the conductive pattern 123 of the insulating substrate 120 are electrically connected by the wiring 163 (Fig. 4(C)).

Further, the wires 161 to 163 are, for example, made of aluminum as a main component and have a diameter of 100 μm to 500 μm.

In addition, the details of the wire bonding work described above will be described later.

Finally, the sealing resin 170 is filled in the resin case 140, whereby the semiconductor device 100 is completed (Fig. 4(D)).

Alternatively, the sealing resin 170 may be filled and covered with a lid.

Next, the details of the wire bonding process (Fig. 4(C)) regarding the manufacturing method of the above semiconductor device will be described.

First, the connection of the wiring 161 between the semiconductor element 131 and the lead frame terminal 151 will be described using FIG.

In addition, the wire bonding process described below is not limited to the connection between the semiconductor element 131 and the lead frame terminal 151, the wiring 162 between the semiconductor elements 131, 132, and the wiring between the lead frame terminal 152 and the conductive pattern 123 of the insulating substrate 120. The connection of 163 is also applicable.

Fig. 5 is a view for explaining connection of wiring of a wire bonding process according to a second embodiment;

5(A) shows that when one end of the wire 161 is joined to the semiconductor element 131, FIG. 5(B) shows that the wire 161 is joined to the lead frame terminal 151, and FIG. 5(C) shows that The arrow S looks at the front end portion of the joining tool 11 of the joining of Figs. 5(A) and (B).

In addition, FIG. 5 shows only the semiconductor element 131 and the resin case 140 provided with the lead frame terminal 151.

The wire bonding apparatus 10 is held by the clamp mechanism 14 in a state where one end portion of the wire 161 extends from the wire guiding portion 12. The wire bonding apparatus 10 moves the front end portion thereof so that one end portion of the wire 161 is positioned at the bonding position of the semiconductor element 131. The wire bonding device 10 is a bonding machine The tool 11 moves in the arrow Y direction (on the side of the semiconductor element 131) (Fig. 5(A)).

One end portion of the wire 161 is held by the groove portion 11a of the bonding tool 11, and is pressed to the bonding position of the semiconductor element 131. In the wire bonding apparatus 10, the ultrasonic wave is oscillated from the ultrasonic vibrator 15 in a state where the wire 161 is pressed, and the bonding tool 11 is vibrated, whereby one end portion of the wire 161 is joined to the position (Fig. 5(C)).

In addition, at this time, the wire bonding apparatus 10 operates the bonding tool 11 by the pressing force, the number of vibrations, and the pressing time at which one end portion of the wire 161 can be joined to the semiconductor element 131. Here, the number of vibrations is set to be relatively high, for example, more than 120 kHz among the vibration numbers of 60 kHz to 150 kHz which are oscillated from the ultrasonic vibrator 15 . Further, the wire 161 thus pressed is deformed in accordance with the shape of the groove portion 11a as shown in Fig. 5(C).

When the wire bonding apparatus 10 thus completes the joining of the one end portion of the wiring 161 to the semiconductor element 131, the oscillation of the ultrasonic vibrator 15 is stopped, the holding of the wiring 161 by the clamping mechanism 14 is opened, and the wiring 161 is wired. The guide unit 12 is supplied. The wire bonding apparatus 10 moves the front end portion of the wire bonding apparatus 10 while feeding the wire 161 from the wire guiding portion 12, and is positioned at the bonding position of the lead frame terminal 151. Further, the wire bonding apparatus 10 holds the wire 161 in the clamp mechanism 14 once the alignment of the front end portion with respect to the joint position of the lead frame terminal 151 is completed. The wire bonding apparatus 10 moves the bonding tool 11 in the arrow direction (semiconductor element 131) as in the case of FIG. 5(A). Side) (Fig. 5(B)).

One end portion of the wire 161 is held by the groove portion 11a of the bonding tool 11, and is pressed to the bonding position of the semiconductor element 131. In the wire bonding apparatus 10, the ultrasonic wave is oscillated from the ultrasonic vibrator 15 in a state where the wire 161 is pressed, and the bonding tool 11 is vibrated, whereby one end portion of the wire 161 is joined to the position (Fig. 5(C)).

Further, at this time, the wire bonding apparatus 10 also operates the bonding tool 11 by the pressing force, the number of vibrations, and the pressing time when the wire 161 can be engaged with the lead frame terminal 151.

As described above, the semiconductor element 131 and the lead frame terminal 151 are electrically connected by the wire 161 by the wire bonding apparatus 10.

Next, the disconnection of the wiring 161 connecting the semiconductor element 131 and the lead frame terminal 151 will be described using FIG.

Fig. 6 is a view for explaining the cutting of the wire bonding work of the second embodiment;

Further, Fig. 6(A) shows a case where the cutter 13 of the wire bonding apparatus 10 half-cuts the cutting position of the wire 161, and Fig. 6(B) shows the case where the cutter 13 is half-cut by the cutter 13. Moreover, FIG. 6(C) is a front end portion of the bonding tool 11 when the arrows S are viewed as shown in FIGS. 6(A) and (B).

The wire bonding apparatus 10 opens the wire 161 by the holding of the wire 161 by the clamp mechanism 14, and supplies the wire 161 from the wire guide 12. The wire bonding apparatus 10 moves the tip end portion from the position of FIG. 5(B) to the right side of FIG. 6 while feeding the wire 161, and will cut The pair of cutters 13 are located at any cut position 161b of the wire 161.

The wire bonding apparatus 10 moves the bonding tool 11 to the lead frame terminal 151 side. The pressing force of the bonding tool 11 at this time for the wire 161 is smaller than the pressing force of the case of Fig. 5(C). Therefore, as shown in FIG. 6(C), the wire 161 is pressed so that the groove portion 11a and the lead frame terminal 151 of the bonding tool 11 are not displaced.

The wire bonding apparatus 10 maintains this state, moves the cutter 13 to the lead frame terminal 151 side, and cuts the cutting position 161b of the wire 161 halfway to form a cut (Fig. 6(A)).

Further, in the wire bonding apparatus 10, when the depth of the incision is too shallow with respect to the diameter of the wire 161, the wire 161 is fatigue-broken and cut by the subsequent vibration, and it takes time or cannot be cut. Further, the wire bonding device 10 has a depth of the cut depending on the device, and the cutting depth of the cutter 13 is limited. In view of the above, the depth of the incision is relative to the diameter of the wire 161 so as to be able to form 50% to 95% (the remaining of the half-cut wire 161 is relative to the original diameter, 50% to 5%). The half cut of the cutter 13 is performed.

The wire bonding apparatus 10 is in contact with the ultrasonic vibrator 15 by the cutter 13 (end portion on the opposite side of the tip end portion) in a state in which the tip end portion is in contact with the cutting position formed by the cutting position 161b of the wire 161. The sound wave oscillates from the ultrasonic vibrator 15 (Fig. 6(B)).

The number of vibrations of the ultrasonic waves oscillated from the ultrasonic vibrator 15 at this time is smaller than the number of vibrations when the wiring 161 is bonded to the semiconductor element 131 or the lead frame terminal 151 in FIG. Such a vibration number is, for example, from The ultrasonic vibrator 15 oscillates at a frequency of 80 kHz to 150 kHz which is less than 80 kHz.

Once the ultrasonic waves are oscillated from the ultrasonic vibrator 15, the bonding tool 11 also vibrates. When the number of vibrations of the ultrasonic wave is made smaller than the number of vibrations of the wire 161 (Fig. 5), the wire 161 pushed by the bonding tool 11 is not joined to the lead frame terminal 151.

Therefore, the wire 161 is not joined to the lead frame terminal 151, and the cut of the tip end portion of the cutter 13 that contacts the ultrasonic vibration also transmits vibration, and the cut is fatigue-fractured and cut. At this time, no sharp point is formed on the cut surface of the cut wire 161.

As described above, in the wire bonding process of the semiconductor device manufacturing method of the second embodiment, the cutter 13 cuts the cut position 161b of the wire 161 to form a cut, and the wire 161 is bonded to the lead frame terminal 151. Further, the bonding tool 11 and the lead frame terminal 151 are pushed so as not to be displaced. The cutter 13 that transmits vibration from the bonding tool 11 is vibrated in a state where the tip end portion of the cutter 13 is brought into contact with the cut. As the cutter 13 vibrates, the incision also vibrates to cause fatigue fracture, and the wire 161 is cut in accordance with the cutting position 161b. Further, when the fatigue fracture is cut by the cutting position 161b of the wire 161, the bonding tool 11 also vibrates in the same manner. However, since the number of vibrations is smaller than the number of vibrations when the wire 161 is joined to the lead frame terminal 151, the wire 161 is not joined to the lead frame terminal 151.

Therefore, the generation of the tip or the like on the cut surface of the wire 161 is suppressed, and the lead frame terminal 151 is not cut by being appropriately cut.

Therefore, when the wire bonding apparatus 10 performs the connection between the semiconductor element 131 of the other semiconductor device 100 and the lead frame terminal 151 again (respectively FIG. 5(A)), as long as the wire 161 is not pointed at the cut surface, It is possible to bond to the semiconductor element 131 as appropriate. At this time, there is no case where pressure is applied to the semiconductor element 131, and deterioration of characteristics of the semiconductor element 131 is suppressed.

Further, in the second embodiment, the vibration of the notch at the cutting position 161b is also caused, and if the joining region 161a is also vibrated, the wire 161 may be peeled off from the lead frame terminal 151. Therefore, it is preferable that the vibration from the cutter 13 for the cut is the number of vibrations in which the joint 161a of the wiring 161 is not peeled off from the lead frame terminal 151 by vibration when the joint 161 is fatigued by the cut. Alternatively, it is preferable that the cutting position 161b is set to a position away from the joining area 161a so that the joining area 161a of the wire 161 is not affected by the vibration of the cut.

[Third embodiment]

The third embodiment describes a wire bonding process performed in a method of manufacturing a semiconductor device using a lead frame including a die pad.

In addition, the wire bonding apparatus used in the wire bonding process is the same as that of the second embodiment.

FIG. 7 is a view for explaining an example of a method of manufacturing the semiconductor device of the third embodiment.

In addition, Figure 7 (A) ~ Figure 7 (D) is a time series display Each of the processes performed in the manufacturing method of the semiconductor device is shown.

Fig. 7(A) is a plan view of a principal part of a lead frame 180 on which a semiconductor element 184 is mounted, and Figs. 7(B) to 7(D) are cross-sectional views showing a dotted line X-X of Fig. 7(A).

First, the semiconductor element 184 is mounted on the die pad 181 of the lead frame 180 including the die pad 181 and the lead terminal 182 via the solder 183 (FIG. 7(A), FIG. 7(B)).

The semiconductor element 184 is mounted by heating the die pad 181 to melt the solder 183 on the die pad 181, and then arranging the semiconductor element 184 to cool and solidify the melted solder 183, thereby fixing the semiconductor element 184 to the die pad 181. on. Alternatively, for example, a plate-shaped solder 183 may be disposed on the die pad 181, and the semiconductor element 184 may be disposed thereon, heated to melt the plate-shaped solder 183, and then cooled and resolidified to bond the semiconductor element 184. It is fixed to the die holder 181.

Further, the semiconductor element 184 is a vertical power semiconductor element such as an IGBT element or a power MOSFET, or a power diode element such as an SBD or an FWD element.

Next, for example, in the wire bonding apparatus 10 described in the second embodiment, the lead terminal 182 and the electrode (not shown) of the semiconductor element 184 are electrically connected by the wire 185 (FIG. 7(C)).

At this time, the same effect as in the second embodiment can be obtained by performing the wire bonding of the wire bonding apparatus 10.

Further, the wiring 185 is made of, for example, aluminum as a main component, and has a diameter of 100 μm to 500 μm.

Next, transfer resin molding is performed, and the solder 183, the semiconductor element 184, and the wiring 185 on the die pad 181 are sealed by the resin 186 (Fig. 7(D)).

In addition, as described above, the first embodiment, the second embodiment, and the third embodiment are described by taking a wire bonding process in the form of a wire (linear). However, the wire bonding process is not limited to the wiring, and the wire bonding can be performed in the same manner. Engage.

1‧‧‧Electrical components

2‧‧‧Wiring

2a‧‧‧ cut face

3‧‧‧Connected field

4‧‧‧ cut position

5‧‧‧cuts

6‧‧‧Vibration components

Claims (9)

A method of manufacturing a semiconductor device, comprising: a bonding process for bonding a wiring to a conductive member included in a semiconductor device; and a cut forming process to be bonded to the wiring of the conductive member The cutting position outside the joining area is half-cut, and a cut is formed in the wire; and the cutting process is performed to vibrate the cut, and the wire is cut at the cutting position. The method of manufacturing a semiconductor device according to the first aspect of the invention, wherein in the bonding process, the bonding region is pressed against the conductive member side while being bonded to the conductive member side, and the bonding is performed. In the slit forming process and the cutting process described above, the wiring is pressed by the bonding tool and the conductive member. The method of manufacturing a semiconductor device according to the second aspect of the invention, wherein in the cutting formation process, the wiring is half-cut at the cutting position by a cutter, and the cutting is performed in the cutting process The device vibrates by the vibration of the bonding tool in a state where the device enters the aforementioned cut. The method of manufacturing a semiconductor device according to claim 3, wherein the number of vibrations of the bonding tool in the cutting process is smaller than the number of vibrations in the joining process. The method of manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the depth of the incision is 50% to 95% with respect to the thickness of the wiring. The method of manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the cutting position is longer than a predetermined length of the bonding region. The method of manufacturing a semiconductor device according to any one of the first to fourth aspects of the present invention, wherein, after the cutting process, the electrode is bonded to the electrode of the semiconductor element. The method of manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the wiring is made of aluminum as a main component. The method of manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the wiring is linear or strip-shaped.