JP2009220319A - Manufacturing method of liquid jet head, and manufacturing method of microdevice - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a liquid jet head in which an escape groove is formed by anisotropic etching while protecting the (111) plane defining a through-hole, and to provide a manufacturing method of a microdevice for achieving such anisotropic etching. <P>SOLUTION: The manufacturing method of the liquid jet head comprises a step of forming a mask 140 having an opening 141 wider than a reference hole on a substrate such that the opening is arranged opposite to the reference hole 32, and a step of forming an escape groove 33 of adhesive in the outer circumference of the reference hole by etching the substrate anisotropically through the opening. An escape groove is formed in the outer circumference of the reference hole by providing insular correction mask portions at positions opposite to the (111) plane in the opening of the mask in the step of forming the mask, and then removing the correction mask portions 142a and 142c by etching the object substrate anisotropically in the step of forming the escape groove. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a liquid jet head and a method for manufacturing a micro device.

  As an ink jet recording head which is a typical example of a liquid ejecting head, for example, a pressure generating chamber communicating with a nozzle opening and a communicating portion communicating with the pressure generating chamber are formed, and a piezoelectric element is formed on one surface side thereof. , A reservoir forming substrate in which a reservoir part that forms a part of the reservoir together with the communication part of the channel forming substrate is formed, and a compliance substrate for sealing the reservoir part of the reservoir forming substrate There are some that have. When these substrates are joined, it is known that after application of the adhesive, the positioning pins are inserted into the through holes for positioning, and then joined via the adhesive (for example, see Patent Document 1). .

Japanese Patent Laid-Open No. 2007-050674 (Claim 1, FIG. 5, etc.)

  Here, for example, a case where the reservoir forming substrate and the compliance substrate are bonded with an adhesive will be described. First, the (111) plane constituting the through hole provided in the reservoir forming substrate which is a silicon single crystal substrate having a (110) crystal plane orientation is detected by the image recognition device. This is because the position is accurately detected by image recognition using the (111) plane as a reference, and the subsequent adhesive application is performed accurately. Next, the installation position of the reservoir forming substrate is detected using the (111) plane as a reference, an adhesive is applied to a predetermined region by an adhesive applying device, and the reservoir forming substrate and the compliance substrate are bonded together. Finally, before the adhesive dries, a positioning pin is inserted into the through hole to perform positioning with high accuracy, and both substrates are completely fixed at accurate positions.

  When the substrates are fixed using the positioning pins in this way, an escape groove for the adhesive is formed by anisotropic etching around the through hole so that the dry adhesive does not adhere to the positioning pins. Specifically, a mask having an opening wider than the through hole for forming the relief groove is provided on the substrate on which the through hole is formed so that the opening is disposed at a position facing the through hole. A relief groove is formed around the through hole by anisotropic etching through a mask.

  However, the opening portion of the through hole at the bottom of the escape groove may be bent due to anisotropic etching at the time of forming the escape groove. In this case, if the (111) surface of the through hole used for positioning at the time of application of the adhesive falls out of the surfaces constituting the through hole, the position cannot be detected by image recognition, and the adhesive cannot be applied. There is a problem that there are cases.

  SUMMARY An advantage of some aspects of the invention is that it provides a method of manufacturing a liquid jet head in which a relief groove can be formed by anisotropic etching while protecting a (111) surface constituting a through hole. . Another object of the present invention is to provide a microdevice manufacturing method capable of realizing such anisotropic etching.

  The method of manufacturing a liquid jet head according to the present invention includes a step of laminating and bonding a plurality of substrates including a flow path forming substrate in which a flow path through which a liquid flows is formed to manufacture a liquid jet head. Positioning with reference to the (111) plane constituting the peripheral portion of the reference hole provided in the target substrate made of a silicon single crystal substrate whose crystal plane orientation is the (110) plane, and another substrate via an adhesive A liquid ejecting head manufacturing method for manufacturing the liquid ejecting head by bonding to a mask, the mask portion having an opening wider than the reference hole at a position facing the reference hole in the target substrate, and the mask A mask forming step of forming an island-shaped correction mask portion at a position facing the (111) plane in the opening portion of the portion, and anisotropically etching the target substrate to face the opening portion Above In addition to removing the region of the elephant substrate, the correction mask portion is etched, the region of the target substrate facing the correction mask portion is removed, and an adhesive relief groove is formed on the outer periphery of the reference hole. An escape groove forming step is provided.

  In the present invention, in the mask forming step, an island-shaped correction mask portion is provided at a position facing the (111) surface in the opening of the mask, thereby forming a (111) surface constituting the reference hole. Protect and prevent anyone. In other words, since the correction mask portion is provided, the region facing the correction mask portion of the target substrate does not start etching unless the correction mask portion is anisotropically etched. Accordingly, since the etching start is delayed, it is possible to prevent the etching of the (111) plane from proceeding excessively even when the anisotropic etching for the target substrate is completed and the formation of the relief groove is completed. Therefore, the (111) plane can be recognized and the adhesive can be accurately applied as the plane reference.

  In this case, the correction mask portion is subjected to the anisotropic etching while the region of the target substrate facing the opening is removed to a predetermined depth by anisotropic etching in the clearance groove forming step. In addition, it is preferable that the correction mask portion is provided so that a region where the correction mask portion of the target substrate is etched becomes the predetermined depth at the end of the anisotropic etching. In this way, the region where the correction mask portion of the target substrate is removed becomes the predetermined depth at the end of the anisotropic etching, so that a suitable relief groove having a constant depth can be formed.

  As a preferred shape of the correction mask part for forming such a relief groove, the correction mask part is provided so that the longitudinal direction is a rectangular shape provided along the (111) plane, and Examples thereof include those provided so as to be flush with the (111) plane.

  In a preferred implementation of the method of manufacturing the liquid jet head, the reference hole is a through hole into which a positioning pin for positioning is inserted when the target substrate is bonded to the other substrate. It is done. This is because if the through hole is used as a reference, there is no need to newly provide a reference hole.

  Further, as a preferred implementation of the method of manufacturing the liquid ejecting head, the liquid ejecting head may be stacked as the substrate on one surface side of the flow path forming substrate, and the nozzle plate may be formed with the nozzle opening. A protective substrate for protecting the pressure generating element as the pressure generating means, and a compliance substrate for sealing the reservoir. And the target substrate is the protective substrate, and the reference hole is provided on the bonding surface of the protective substrate with the compliance substrate.

In this case, it is preferable that the mask portion is made of a SiO ₂ film and the target substrate is a silicon single crystal substrate because the above-described preferred embodiment can be performed.

  In the method for manufacturing a microdevice of the present invention, a mask having an opening wider than a reference hole provided in the crystal substrate is formed on a crystal substrate having a (110) crystal surface orientation on the surface, and the opening serves as the reference hole. A method of manufacturing a microdevice, comprising: a mask forming step provided so as to face each other; and an etching step of anisotropically etching the crystal substrate to form a stepped portion on an outer periphery of the reference hole. In the step, an island-shaped correction mask portion is formed at a position facing the (111) plane constituting the peripheral portion of the reference hole in the opening portion of the mask, and the correction mask portion is the target in the etching step. Etching is performed by anisotropic etching of the substrate to form a step portion on the outer periphery of the reference hole. According to the microdevice manufacturing method of the present invention, since it takes time until the correction mask portion is removed by etching, a region facing the correction mask of the crystal substrate, that is, a reference hole is formed at the end of etching (111). ) It can be prevented that the etching of the surface proceeds excessively and the surface is dripped.

Hereinafter, the present invention will be described in detail based on embodiments.
(Embodiment 1)
FIG. 1 is an exploded perspective view of an ink jet recording head which is an example of a liquid ejecting head according to Embodiment 1 of the present invention, and FIG. 2 is a plan view of FIG. The flow path forming substrate 10 is composed of a silicon single crystal substrate having a (110) plane crystal plane orientation on its surface, and an elastic film 50 having a thickness of 0.5 to 2 μm made of silicon dioxide by thermal oxidation in advance on one surface thereof. Is formed.

  In the flow path forming substrate 10, pressure generating chambers 12 partitioned by a plurality of partition walls 11 are arranged in parallel in the width direction (short direction) by anisotropic etching from the other surface side. In addition, an ink supply path 14 and a communication path 15 are partitioned by a partition wall 11 on one end side in the longitudinal direction of the pressure generating chamber 12 of the flow path forming substrate 10. In addition, a communication portion 13 constituting a part of the reservoir 100 serving as an ink chamber (liquid chamber) common to the pressure generation chambers 12 is formed at one end of the communication passage 15.

  The ink supply path 14 communicates with one end side in the longitudinal direction of the pressure generation chamber 12 and has a smaller cross-sectional area than the pressure generation chamber 12. For example, in the present embodiment, the ink supply path 14 has a width smaller than the width of the pressure generation chamber 12 by narrowing the flow path on the pressure generation chamber 12 side between the reservoir 100 and each pressure generation chamber 12 in the width direction. The flow path resistance of the ink flowing into the pressure generating chamber 12 from the communication portion 13 is kept constant.

  In other words, the flow path forming substrate 10 is connected to the pressure generation chamber 12, the ink supply path 14 having a smaller cross-sectional area in the short direction of the pressure generation chamber 12, the ink supply path 14, and the ink supply. A liquid flow path including a communication path 15 having a cross-sectional area larger than the cross-sectional area in the short direction of the path 14 is provided by being partitioned by a plurality of partition walls 11.

  The pressure generating chamber 12, the communication portion 13, the ink supply path 14, and the communication path 15 are formed by anisotropically etching the flow path forming substrate 10 from the surface opposite to the elastic film 50. Anisotropic etching is performed using the difference in etching rate of the silicon single crystal substrate.

  Further, on the opening surface side of the flow path forming substrate 10, a nozzle plate 20 having a nozzle opening 21 communicating with the vicinity of the end of each pressure generating chamber 12 on the side opposite to the ink supply path 14 is provided with an adhesive. Or a heat-welded film or the like. The nozzle plate 20 is made of, for example, glass ceramics, a silicon single crystal substrate, stainless steel, or the like. When a silicon single crystal substrate is used as the nozzle plate 20, the nozzle openings 21 can be formed by anisotropic etching in the same manner as the flow path forming substrate 10 described above. That is, when a silicon single crystal substrate is used as the nozzle plate 20, the nozzle plate 20 is also a crystal substrate.

  On the other hand, as described above, the elastic film 50 having a thickness of, for example, about 1.0 μm is formed on the surface of the flow path forming substrate 10 opposite to the nozzle plate 20, and the elastic film 50 is formed on the elastic film 50. An insulator film 55 having a thickness of, for example, about 0.4 μm is formed. Further, on the insulator film 55, a lower electrode film 60 having a thickness of, for example, about 0.2 μm, a piezoelectric layer 70 having a thickness of, for example, about 1.0 μm, and a thickness of, for example, about 0 The upper electrode film 80 having a thickness of 0.05 μm is laminated by a process described later to constitute the piezoelectric element 300. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. In general, one electrode of the piezoelectric element 300 is used as a common electrode, and the other electrode and the piezoelectric layer 70 are patterned for each pressure generating chamber 12. In this case, a portion that is configured by any one of the patterned electrodes and the piezoelectric layer 70 and in which piezoelectric distortion is generated by applying a voltage to both electrodes is referred to as a piezoelectric active portion 320. In this embodiment, the lower electrode film 60 is a common electrode of the piezoelectric element 300, and the upper electrode film 80 is an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for the convenience of the drive circuit and wiring. In any case, the piezoelectric active part 320 is formed for each pressure generating chamber 12. In addition, here, the piezoelectric element 300 and the diaphragm that is displaced by driving the piezoelectric element 300 are collectively referred to as an actuator device. In the above-described example, the elastic film 50, the insulator film 55, and the lower electrode film 60 function as a diaphragm. However, the present invention is not limited to this, and for example, the elastic film 50 and the insulator film 55 are provided. Instead, only the lower electrode film 60 may act as a diaphragm. Further, the piezoelectric element 300 itself may substantially serve as a diaphragm.

  In addition, the upper electrode film 80 of each piezoelectric element 300 has a lead electrode 90 such as gold (Au) extending to the vicinity of the end of the flow path forming substrate 10 opposite to the ink supply path 14. Each is connected. A voltage is selectively applied to each piezoelectric element 300 via the lead electrode 90.

  Further, the protective substrate 30 is bonded to the surface of the flow path forming substrate 10 on the piezoelectric element 300 side via an adhesive layer such as an adhesive. The protective substrate 30 is provided with a reservoir section 31 that constitutes a reservoir 100 that communicates with the communication section 13 and serves as a common ink chamber for the pressure generation chambers 12 in a region facing the communication section 13.

  The reservoir portion 31 is formed along the direction in which the pressure generating chambers 12 are arranged, and a gradually decreasing portion whose width gradually decreases toward the outside is provided at both ends in the longitudinal direction. Thereby, the opening of the reservoir 31 according to this embodiment has a substantially trapezoidal shape.

  The gradually decreasing portion of the reservoir portion 31 is provided in order to make the flow path resistance of each pressure generating chamber 12 constant and to make the discharge characteristics of the ink droplets discharged from the nozzle openings 21 uniform.

  The protective substrate 30 having such a reservoir portion 31 is composed of a silicon single crystal substrate whose surface crystal plane orientation is the (110) plane that is the same material as the flow path forming substrate 10, and the reservoir portion 31 includes the protective substrate 30. It is formed by anisotropic etching from both sides.

  Further, the protective substrate 30 is provided with a through hole 32 into which a positioning pin used for positioning when the protective substrate 30 is bonded to the flow path forming substrate 10 and a compliance substrate 40 described later. As will be described later, a part of the peripheral portion of the through-hole 32, that is, the peripheral portion is constituted by two first (111) surfaces and two second (111) surfaces. 111) surface is used for position detection in image recognition when the adhesive is applied. On the outer periphery of the through hole 32, an escape groove 33 for the adhesive is provided at a certain depth on both opening sides.

  In addition, the protective substrate 30 is provided with a piezoelectric element holding portion 35 having a space that does not hinder the movement of the piezoelectric element 300 in a region facing the piezoelectric element 300. The piezoelectric element holding portion 35 only needs to have a space that does not hinder the movement of the piezoelectric element 300, and the space may be sealed or not sealed.

  In the present embodiment, the communication portion 13 of the flow path forming substrate 10 and the reservoir portion 31 of the protective substrate 30 constitute the reservoir 100. However, the present invention is not particularly limited thereto. The communication portion 13 may be divided into a plurality for each pressure generation chamber 12 and only the reservoir portion 31 may be used as the reservoir. Further, for example, only the pressure generation chamber 12 is provided in the flow path forming substrate 10, and the reservoir (members such as the elastic film 50 and the insulator film 55) interposed between the flow path forming substrate 10 and the protective substrate 30 An ink supply path 14 that communicates with each pressure generating chamber 12 may be provided.

  A drive circuit 120 for driving the piezoelectric element 300 is mounted on the protective substrate 30. For example, a circuit board or a semiconductor integrated circuit (IC) can be used as the drive circuit 120. The drive circuit 120 and the lead electrode 90 are electrically connected via a connection wiring 121 made of a conductive wire such as a bonding wire.

  On the protective substrate 30, a compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded via an adhesive layer 44. Here, the sealing film 41 is made of a material having low rigidity and flexibility (for example, a polyphenylene sulfide (PPS) film having a thickness of 6 μm), and the sealing film 41 seals one surface of the reservoir portion 31. It has been stopped. The fixing plate 42 is made of a hard material such as metal (for example, stainless steel (SUS) having a thickness of 30 μm). Since the region of the fixing plate 42 facing the reservoir 100 is an opening 43 that is completely removed in the thickness direction, one surface of the reservoir 100 is sealed only with a flexible sealing film 41. Has been.

  In such an ink jet recording head 1 of the present embodiment, ink is taken in from an external ink supply means (not shown), filled with ink from the reservoir 100 to the nozzle opening 21, and then in accordance with a recording signal from the drive circuit 120. Then, a voltage is applied between each of the lower electrode film 60 and the upper electrode film 80 corresponding to the pressure generation chamber 12 to bend and deform the elastic film 50, the insulator film 55, the lower electrode film 60, and the piezoelectric layer 70. As a result, the pressure in each pressure generating chamber 12 increases and ink droplets are ejected from the nozzle openings 21.

  A method for manufacturing the ink jet recording head of this embodiment will be briefly described. First, the elastic film 50 is formed on the surface of the flow path forming substrate 10, and the insulator film 55 is formed on the piezoelectric element forming surface side of the elastic film 50. Next, the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80 are sequentially stacked, and these are simultaneously patterned to form the piezoelectric element 300. Next, the lead electrode 90 is formed over the entire surface of the flow path forming substrate 10 and patterned for each piezoelectric element 300.

  Thereafter, the protective substrate 30 in which the reservoir portion 31, the through hole 32, the escape groove 33, and the like are formed in advance is bonded onto the flow path forming substrate 10 after the film formation process is completed. Next, the flow path forming substrate 10 is made to have a desired thickness, and thereafter, the flow path forming substrate 10, which is a silicon single crystal substrate, is anisotropically etched to form the pressure generation chamber 12, the communication portion 13, and the ink supply path 14. To do.

  A nozzle plate 20 having a nozzle opening 21 is bonded to the surface of the flow path forming substrate 10 opposite to the protective substrate 30. Then, the (111) surface constituting the through hole 32 of the protective substrate 30 is detected by image recognition, and an adhesive is applied to a predetermined position of the protective substrate 30 with the detected (111) surface as a reference, and the protective substrate A compliance substrate 40 is bonded onto 30. Finally, each substrate such as the flow path forming substrate 10 and the protective substrate 30 is divided into chip sizes, whereby the ink jet recording head of this embodiment as shown in FIG. 1 is obtained.

  Here, when the (111) plane constituting the through-hole 32 as described above is detected by image recognition, if the (111) plane is tilted when the escape groove 33 is formed, the image cannot be accurately recognized. Need to prevent. Therefore, when forming the relief groove 33 of the adhesive, the escape groove of the adhesive is formed while protecting the (111) surface constituting the through hole 32 by the adhesive relief groove forming step shown below.

  Hereinafter, the clearance groove forming step will be described in detail with reference to FIGS. FIG. 3 is a schematic plan view of an essential part showing a manufacturing process of the protective substrate 30 in the manufacturing method of the ink jet recording head 1 of the present invention. FIG. 4 shows a manufacturing process of the protective substrate 30 and is a schematic sectional view taken along line XX ′ in FIG.

  According to FIG. 3A, the protective substrate 30 is provided with a through hole 32. For example, the through hole 32 is formed at the same time as the double-sided etching when the reservoir 31 is formed on the protective substrate 30. A silicon dioxide film 130 serving as a mask is formed on the entire surface of the protective substrate 30.

  In this embodiment, the protective substrate 30 is thermally oxidized in a diffusion furnace at about 1100 ° C., and the silicon dioxide film 130 is formed on the surface thereof. The material of the mask is not limited to silicon dioxide, but may be other materials such as silicon nitride. Further, the method for forming the mask is not particularly limited, and vapor deposition, sputtering, or the like may be used.

  Next, as shown in FIGS. 3B and 4B, the silicon dioxide film 130 is patterned by etching through a resist film or the like, thereby forming a mask 140 for forming the relief groove 33. Is formed (mask forming step).

  The formed mask 140 has an opening 141. The shape of the opening 141 is set in accordance with the desired shape of the opening of the relief groove 33, and has a substantially hexagonal shape in the drawing. A relief groove 33 is formed through the opening 141. In the opening 141, four correction mask portions 142a to 142d are provided. Each of the correction mask portions 142a to 142d is in a position facing the first (111) plane and the second (111) plane of the crystal plane orientation constituting the through hole 32, in an island shape, and in an elongated rectangular shape. The first (111) plane and the second (111) plane are flush with each other (see FIG. 4B). By providing the correction mask portions 142a to 142d, as will be described later, when the protective substrate 30 is anisotropically etched in a later etching step, the (111) plane is protected to prevent dripping of this plane. be able to.

  After forming the mask 140 having the opening 141 and the correction mask portions 142a to 142d on the protective substrate 30, anisotropic etching is performed from both sides of the protective substrate 30 through the opening 141 to form the relief grooves 33 ( Etching process or relief groove forming process). In the present embodiment, the protective substrate 30 is immersed in an alkaline solution such as an aqueous potassium hydroxide (KOH) solution, whereby anisotropic etching is performed from both sides of the protective substrate 30.

  As a result, as shown in FIG. 4C, the protective substrate 30 is gradually etched from a portion where the mask 140 is not formed (region facing the opening 141). Simultaneously with this etching, as shown in FIG. 3C, the correction mask portions 142a to 142d are gradually etched at an angle of 29 ° with respect to the (111) plane of the crystal orientation. That is, the correction mask portions 142a to 142d each having a long and narrow rectangular shape are gradually etched from the four corners. Then, the protective substrate 30 is etched in order from the region under the correction mask portions 142a to 142d removed by the etching. When the etching of the correction mask portions 142a to 142d proceeds, all of the correction mask portions 142a to 142d are removed as shown in FIGS. 3 (d) and 4 (d).

  After elapse of a predetermined time, as shown in FIGS. 3E and 4E, the etching in the depth direction of the protective substrate 30 in the portion where the mask 140 is not formed is finished, and the relief groove having a predetermined depth is obtained. 33 is formed. Here, also in the region of the protective substrate 30 facing the correction mask portions 142a to 142d, the etching is completed at the predetermined depth, and the depth of the escape groove becomes substantially uniform. This is because the correction mask portions 142a to 142d are sufficiently thin, and the region of the protective substrate 30 facing these tends to proceed with etching, and the etching depth of this region is substantially the same as the etching depth of the escape groove 33. It will be. Thus, it is preferable that the depth of the escape groove 33 is substantially uniform. This is because, if a large portion of the region of the protective substrate 30 facing the correction mask portions 142a to 142d that cannot be removed remains on the (111) surface by etching, it may come into contact and break when the positioning pin is inserted. Because there is also. Accordingly, the correction mask portions 142a to 142d are configured so that the etching depths of the regions facing the correction mask portions 142a to 142d are the same as or substantially the same as the etching depths of the other portions at the end of the etching of the relief groove 33. It is preferable to provide them in advance. If a length that does not break when the positioning pin is inserted remains, the (111) surface of the through-hole 32 that is used as a reference when applying the adhesive remains without any damage, and the obtained escape groove 33 sufficiently functions as a relief groove.

  As described above, in the present embodiment, when the escape groove 33 is formed, the correction mask portions 142a to 142d are provided, so that the etching of the portion where the crystal orientation constituting the through hole 32 is the (111) plane is delayed. Since it starts, you can prevent anyone in this part. That is, in the present embodiment, the correction mask portions 142a to 142d are configured to protect the portion where the crystal orientation of the edge of the through-hole 32 is the (111) plane so that this surface is not bent.

  In the protective substrate 30 obtained as described above, the (111) surface constituting the reference through-hole 32 at the time of applying the adhesive is not tilted. Therefore, in the subsequent adhesive applying process, the image recognition is performed accurately. The position can be detected.

  After the mask formation step and the etching step (or escape groove formation step), after detecting the position of the substrate with reference to the (111) plane constituting the reference hole, an adhesive is applied to the target substrate, and other members are attached. Then, before the adhesive is completely fixed, a positioning pin is inserted into the through hole to perform positioning so that the target substrate and the other member are completely fixed.

(Other embodiments)
As mentioned above, although embodiment of this invention was described, this invention is not limited to embodiment mentioned above of course. For example, in the first embodiment described above, the escape grooves 33 that function as the escape grooves for the adhesive are formed on both sides of the through holes 32, but the escape grooves 33 may be formed only on one side of the through holes 32.

  In Embodiment 1 described above, an example in which a silicon single crystal substrate is used as the crystal substrate (protective substrate 30) has been described. However, the present invention is not particularly limited thereto, and the crystal plane orientation of the surface is the (110) plane. The substrate is not particularly limited as long as the substrate has crystallinity.

  In the first embodiment described above, the actuator device having the thin film type piezoelectric element 300 as the pressure generating means for ejecting the ink droplets from the nozzle opening 21 has been described. However, the present invention is not particularly limited thereto. An actuator device having a thick film type piezoelectric element formed by a method such as affixing a heat generating element, or a heating element is arranged in a pressure generating chamber, and a droplet is discharged from a nozzle opening by a bubble generated by heat generation of the heating element. An actuator device or a so-called electrostatic actuator device that generates static electricity between a diaphragm and an electrode, deforms the diaphragm by electrostatic force, and discharges a droplet from a nozzle opening can be used.

  Furthermore, in the first embodiment described above, the method of manufacturing the ink jet recording head 1 is described as an example of the method of manufacturing the liquid ejecting head. However, the present invention is widely intended for the method of manufacturing the liquid ejecting head. Of course, the present invention can also be applied to a method of manufacturing a liquid ejecting head that ejects liquid other than ink. Other liquid ejecting heads include, for example, various recording heads used in image recording apparatuses such as printers, color material ejecting heads used in the manufacture of color filters such as liquid crystal displays, organic EL displays, and FEDs (field emission displays). Examples thereof include an electrode material ejection head used for electrode formation, a bioorganic matter ejection head used for biochip production, and the like.

  The present invention is not limited to a method for manufacturing a liquid jet head, and can be widely applied to a method for manufacturing a microdevice that performs microfabrication by anisotropically etching a crystal substrate having a (110) crystal plane orientation. It can be done.

FIG. 3 is an exploded perspective view of the recording head according to the first embodiment. 2A and 2B are a plan view and a cross-sectional view of the recording head according to the first embodiment. FIG. 3 is a schematic plan view showing a main part of the manufacturing process of the protective substrate according to the first embodiment. FIG. 3 is a schematic cross-sectional view of a main part showing a manufacturing process of a protective substrate according to Embodiment 1.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Inkjet recording head (liquid ejecting head), 10 Flow path formation board | substrate, 12 Pressure generation chamber, 13 Communication part, 14 Ink supply path, 15 Communication path, 20 Nozzle plate, 21 Nozzle opening, 30 Protection board (crystal substrate) , 31 reservoir, 32 through-hole, 33 relief groove, 40 compliance substrate, 50 elastic film, 55 insulator film, 60 lower electrode film, 70 piezoelectric layer, 80 upper electrode film, 90 lead electrode, 100 reservoir, 120 drive Circuit, 121 connection wiring, 130 silicon dioxide film, 140 mask, 141 opening, 142a to 142d correction mask, 300 piezoelectric element

Claims (7)

When manufacturing a liquid ejecting head by laminating and bonding a plurality of substrates including a channel forming substrate in which a channel through which a liquid flows is formed,
Among the substrates, positioning is performed with reference to the (111) plane that constitutes the peripheral portion of the reference hole provided in the target substrate made of a silicon single crystal substrate whose surface crystal plane orientation is the (110) plane, and an adhesive. A liquid ejecting head manufacturing method for manufacturing the liquid ejecting head by bonding to another substrate via
A mask portion having an opening wider than the reference hole at a position facing the reference hole on the target substrate, and an island-shaped correction at a position facing the (111) plane in the opening of the mask portion. A mask forming step of forming a mask portion;
The region of the target substrate facing the opening is removed by anisotropic etching of the target substrate, and the correction mask portion is etched to face the correction mask portion of the target substrate. And a relief groove forming step of forming an relief groove for the adhesive on the outer periphery of the reference hole. While removing the region of the target substrate facing the opening by anisotropic etching in the relief groove forming step so as to have a predetermined depth, the correction mask portion is subjected to the anisotropic etching, and The liquid jet according to claim 1, wherein the correction mask portion is provided so that a region where the correction mask portion of the target substrate is etched becomes the predetermined depth at the end of the anisotropic etching. Manufacturing method of the head. The correction mask portion is provided so that a longitudinal direction thereof is a rectangular shape provided along the (111) plane, and is provided so as to be flush with the (111) plane. The method of manufacturing a liquid jet head according to claim 1. The said reference hole is a through-hole which inserts the positioning pin for performing positioning, when joining the said object board | substrate and the said other board | substrate, The any one of Claims 1-3 characterized by the above-mentioned. Manufacturing method of the liquid jet head of the present invention. The liquid ejecting head is stacked as the substrate on one side of the flow path forming substrate and the nozzle plate is formed with the nozzle opening, and is stacked on the other surface side of the flow path forming substrate and the reservoir. And a protective substrate for protecting the pressure generating element as the pressure generating means, and a compliance substrate for sealing the reservoir,
5. The liquid jet according to claim 1, wherein the target substrate is the protective substrate, and the reference hole is provided in a joint surface of the protective substrate with the compliance substrate. Manufacturing method of the head. The method of manufacturing a liquid jet head according to claim 1, wherein the mask portion is made of a SiO ₂ film, and the target substrate is a silicon single crystal substrate. A mask forming step of providing, on a crystal substrate having a surface crystal plane orientation of (110), a mask having an opening wider than a reference hole provided in the crystal substrate so that the opening faces the reference hole; An etching process for anisotropically etching the crystal substrate to form a stepped portion on the outer periphery of the reference hole,
In the mask forming step, an island-shaped correction mask portion is formed at a position facing the (111) plane that forms the peripheral portion of the reference hole in the opening of the mask, and the correction mask portion is formed in the etching step. A method of manufacturing a microdevice, comprising: etching the target substrate by anisotropic etching to form a step portion on an outer periphery of the reference hole.

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