JP2009206409A - Method for manufacturing wiring substrate - Google Patents

Method for manufacturing wiring substrate Download PDF

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JP2009206409A
JP2009206409A JP2008049600A JP2008049600A JP2009206409A JP 2009206409 A JP2009206409 A JP 2009206409A JP 2008049600 A JP2008049600 A JP 2008049600A JP 2008049600 A JP2008049600 A JP 2008049600A JP 2009206409 A JP2009206409 A JP 2009206409A
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metal foil
insulating layer
wiring board
film
main surface
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JP5177855B2 (en
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Hiroichi Yamada
博一 山田
Naoki Miyoshi
直樹 三好
Masaharu Yasuda
正治 安田
Itsuro Shishido
逸朗 宍戸
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Kyocera SLC Technologies Corp
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Kyocera SLC Technologies Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a wiring substrate wherein the wiring substrate which is thin and has high density is efficiently manufactured. <P>SOLUTION: The method for manufacturing the wiring substrate includes the stages of: laminating an insulating layer 21 formed of an electric insulating material containing a resin on a metal foil 12P with a base film which includes the metal foil 12P held on the base film 1 with an adhesive layer interposed, and forming a plurality of via holes V in the insulating layer 21; depositing and bonding a first wiring conductor 11, formed of a plated conductor connected to the metal foil 12P, in a predetermined pattern on the insulating layer 21 and in the via holes V; and separating the metal foil 12P supported on the base film 1 and a laminate 10 including the insulating layer 21 and first wiring conductor 11 from the base film 1. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、半導体素子等の電子部品を搭載するために用いられる配線基板の製造方法に関するものである。   The present invention relates to a method for manufacturing a wiring board used for mounting electronic components such as semiconductor elements.

従来、半導体素子等の電子部品を搭載するために用いられる高密度配線基板としてビルドアップ配線基板がある。一般的なビルドアップ配線基板は、両面に銅箔から成る配線導体が形成された厚みが0.2〜2.0mm程度のガラス−樹脂板から成るコア基板の両面に、厚みが10〜100μm程度の樹脂から成る絶縁層と、厚みが5〜50μm程度の銅めっき膜から成る配線導体とを交互に積層して成る。しかしながら、このような一般的なビルドアップ配線基板は高密度配線が可能であるものの、コア基板として厚みが0.2〜2.0mm程度のガラス−樹脂板を使用することから、配線基板の全体厚みを薄くすることが困難であるという問題点があった。   Conventionally, there is a build-up wiring board as a high-density wiring board used for mounting electronic components such as semiconductor elements. A typical build-up wiring board has a thickness of about 10 to 100 μm on both sides of a core substrate made of a glass-resin plate having a thickness of about 0.2 to 2.0 mm, where wiring conductors made of copper foil are formed on both sides. Insulating layers made of the above resin and wiring conductors made of a copper plating film having a thickness of about 5 to 50 μm are alternately laminated. However, although such a general build-up wiring board is capable of high-density wiring, since a glass-resin plate having a thickness of about 0.2 to 2.0 mm is used as the core board, the entire wiring board is used. There was a problem that it was difficult to reduce the thickness.

そこで、コア基板を使用しないでビルドアップ層のみで配線基板を形成する方法が提案されている。そのような方法として、例えば特許文献1には、金属板上にビルドアップ層を形成した後、前記金属板をエッチング除去することにより半導体装置用の配線基板を製造する方法が提案されている。この特許文献1に示された方法によれば、半導体素子搭載面が平坦であり、且つ薄型の配線基板を提供できる。   Therefore, a method of forming a wiring board only with a buildup layer without using a core board has been proposed. As such a method, for example, Patent Document 1 proposes a method of manufacturing a wiring board for a semiconductor device by forming a buildup layer on a metal plate and then etching away the metal plate. According to the method disclosed in Patent Document 1, a semiconductor device mounting surface is flat and a thin wiring substrate can be provided.

しかしながら、この特許文献1に記載された方法では、比較的厚みを必要とする金属板をエッチング除去することが必要であり、そのエッチングに長時間を要する。そのため生産効率が低いという解決すべき問題点があった。
特許第3635219号公報
However, in the method described in Patent Document 1, it is necessary to etch away a metal plate that requires a relatively large thickness, and the etching takes a long time. Therefore, there was a problem to be solved that the production efficiency was low.
Japanese Patent No. 3635219

本発明の課題は、薄型で高密度な配線基板を効率よく製造することが可能な配線基板の製造方法を提供することである。   The subject of this invention is providing the manufacturing method of the wiring board which can manufacture a thin and high-density wiring board efficiently.

本発明の配線基板の製造方法は、支持フィルム上に金属箔が粘着層を介して保持された支持フィルム付き金属箔の前記金属箔上に、樹脂を含有する電気絶縁材料から成る絶縁層を積層するとともに該絶縁層に複数のビア孔を形成する工程と、前記絶縁層上および前記ビア孔内に前記金属箔と接続するめっき導体から成る第1の配線導体を所定のパターンに析出させて被着する工程と、前記支持フィルム上に支持された前記金属箔と前記絶縁層と前記第1の配線導体とを含む積層体を前記支持フィルムから分離する工程とを含むことを特徴とするものである。   In the method for manufacturing a wiring board according to the present invention, an insulating layer made of an electrically insulating material containing a resin is laminated on the metal foil of the metal foil with a support film on which the metal foil is held via an adhesive layer. And forming a plurality of via holes in the insulating layer, and depositing a first wiring conductor made of a plating conductor connected to the metal foil on the insulating layer and in the via holes in a predetermined pattern. And a step of separating the laminate including the metal foil supported on the support film, the insulating layer, and the first wiring conductor from the support film. is there.

また、本発明の配線基板の製造方法は、前記積層体を形成する工程の前に、前記支持フィルム付き金属箔を、該支持フィルム付き金属箔よりも広い平坦な主面を有する支持基板の前記主面の中央部に、前記金属箔が露出するようにして積層する工程を含み、前記絶縁層を前記金属箔上から該金属箔の外側の前記支持基板上まで延在させて積層するとともに該絶縁層上に前記第1の配線導体を被着して前記支持基板の前記主面の中央部上に前記積層体を形成する。   Further, in the method for manufacturing a wiring board according to the present invention, before the step of forming the laminate, the metal foil with a support film is formed on the support board having a flat main surface wider than the metal foil with a support film. And laminating the metal foil so that the metal foil is exposed at the center of the main surface, the insulating layer extending from the metal foil to the support substrate outside the metal foil, and laminating. The first wiring conductor is deposited on an insulating layer, and the laminate is formed on the central portion of the main surface of the support substrate.

さらに、本発明の配線基板の製造方法は、前記支持フィルム付き金属箔を前記支持基板の主面に積層する工程が、さらに前記支持基板の前記主面の外周部に、前記金属箔を取り囲む金属枠を、該金属枠の一方の主面が露出するように積層する工程を含む。   Furthermore, in the method for manufacturing a wiring board according to the present invention, the step of laminating the metal foil with a support film on the main surface of the support substrate further includes a metal surrounding the metal foil on an outer peripheral portion of the main surface of the support substrate. A step of laminating the frame such that one main surface of the metal frame is exposed;

またさらに、本発明の配線基板の製造方法は、前記積層体を前記支持フィルムから分離する工程の前に、前記金属箔の外周縁の内側領域に位置する前記積層体および支持基板を残余の部分から切り出す工程を含む。   Still further, in the method for manufacturing a wiring board according to the present invention, before the step of separating the laminate from the support film, the laminate and the support substrate located in the inner region of the outer peripheral edge of the metal foil are the remaining portions. A step of cutting out from.

本発明の配線基板の製造方法によれば、支持フィルム上に金属箔が粘着層を介して保持された支持フィルム付き金属箔の前記金属箔上に絶縁層と第1の配線導体とを順次積層して前記金属箔と前記絶縁層と前記第1の配線導体とから成る配線基板用の積層体を形成するので、コア基板を使用することによる配線基板の全体厚みを薄くすることができないという問題がなく、薄型で高密度の配線基板を提供することができる。   According to the method for manufacturing a wiring board of the present invention, an insulating layer and a first wiring conductor are sequentially laminated on the metal foil of the metal foil with a support film in which the metal foil is held on the support film via an adhesive layer. In addition, since a laminate for a wiring board composed of the metal foil, the insulating layer, and the first wiring conductor is formed, the overall thickness of the wiring board cannot be reduced by using the core board. Therefore, a thin and high-density wiring board can be provided.

しかも、形成された積層体を前記支持フィルムから分離する際には、前記支持フィルム付き金属箔は、支持フィルム上に金属箔が粘着層を介して保持されているだけなので、支持フィルムと金属箔との間を引き剥がすだけで積層体を破損することなく、短時間かつ簡単に分離することができ、それにより薄型で高密度な配線基板を効率よく製造することができる。   And when separating the formed laminated body from the said support film, since the said metal foil with a support film only hold | maintains the metal foil on the support film via the adhesion layer, a support film and metal foil The laminate can be easily separated in a short time without damaging the laminate by simply peeling off the gap between the two, and thereby a thin and high-density wiring board can be efficiently manufactured.

また、支持フィルム付き金属箔よりも広い平坦な主面を有する支持基板の前記主面の中央部に支持フィルム付き金属箔を積層し、その上に絶縁層を金属箔の外側の支持基板上まで延在するように積層するとともに該絶縁層上に前記第1の配線導体を被着して前記積層体を形成すると、平坦な主面を有する支持基板を用いるので、配線基板を製造する際の安定性を向上させることができるとともに、支持基板の外周部と絶縁層とが直接積層されるので、絶縁層および第1の配線導体を形成する製造工程中において金属箔と支持フィルムとの間で剥離が発生することを有効に防止することができる。   In addition, a metal foil with a support film is laminated at the center of the main surface of the support substrate having a flat main surface wider than the metal foil with a support film, and an insulating layer is placed on the support substrate outside the metal foil. When the laminated body is formed by depositing the first wiring conductor on the insulating layer so as to extend, a support substrate having a flat main surface is used. While stability can be improved, since the outer peripheral part of a support substrate and an insulating layer are laminated directly, it is between metal foil and a support film in the manufacturing process which forms an insulating layer and the 1st wiring conductor. It is possible to effectively prevent the occurrence of peeling.

さらに、支持基板の主面の外周部に、支持フィルム付き金属箔を取り囲む金属枠を、該金属枠の一方の主面が露出するようにして積層すると、該金属枠をめっきのための電荷供給用の端子として利用することができ、これにより本発明にかかる配線基板を効率よく製造することができる。   Further, when a metal frame surrounding the metal foil with the support film is laminated on the outer peripheral portion of the main surface of the support substrate so that one main surface of the metal frame is exposed, the metal frame is supplied with electric charge for plating. As a result, the wiring board according to the present invention can be efficiently manufactured.

またさらに、前記積層体を前記支持フィルムから分離する工程の前に、前記金属箔の外周縁の内側領域に位置する前記積層体および支持基板を残余の部分から切り出すと、切り出した積層体を支持フィルムから容易に剥離することができる。   Furthermore, before the step of separating the laminate from the support film, the laminate and the support substrate located in the inner region of the outer peripheral edge of the metal foil are cut out from the remaining portion to support the cut-out laminate. It can be easily peeled off from the film.

以下、本発明にかかる配線基板の製造方法の一実施形態について、図1〜図12を参照して詳細に説明する。   Hereinafter, an embodiment of a method for manufacturing a wiring board according to the present invention will be described in detail with reference to FIGS.

まず、図1に示すように、支持フィルム付き金属箔2と、支持基板3用のプリプレグ3Pと、金属枠4とを準備する。支持フィルム付き金属箔2は、支持フィルム1上に金属箔12Pが粘着層(不図示)を介して保持されたものである。   First, as shown in FIG. 1, the metal foil 2 with a support film, the prepreg 3P for the support substrate 3, and the metal frame 4 are prepared. The metal foil 2 with a support film is obtained by holding a metal foil 12P on the support film 1 via an adhesive layer (not shown).

支持フィルム1は、厚みが10〜100μm程度であり、金属箔12Pに破れや皺が発生するのを有効に防止するとともに、金属箔12Pの取扱いを容易とするためのものである。支持フィルム1としては、例えばポリエステル樹脂等の耐熱性樹脂から成るのが好ましい。具体例としては、ポリエチレンテレフタレート(PET)フィルム等が挙げられる。   The support film 1 has a thickness of about 10 to 100 μm and effectively prevents the metal foil 12P from being broken or wrinkled, and facilitates the handling of the metal foil 12P. The support film 1 is preferably made of a heat resistant resin such as a polyester resin. Specific examples include a polyethylene terephthalate (PET) film.

金属箔12Pは、配線基板の製造における起点となる導体層を提供するためのものである。金属箔12Pとしては、例えば銅(銅箔)等の良導電性金属から成るのが好ましい。金属箔12Pの厚みとしては、例えば1〜35μm程度が挙げられる。これにより、該金属箔12Pをエッチング除去する際には、短時間でエッチング除去することができる。また、このような厚みの金属箔12Pは、全てエッチング除去する必要はなく、所定パターンにエッチングし配線導体の一部として好適に利用することができる。これに対し、金属箔12Pの厚みが1μmより薄いと、金属箔12Pの強度が低下し、この金属箔12P上に絶縁層と導体層とを交互に複数積層する際の作業性が低下するおそれがあり、35μmより厚いと、必要以上に厚くなりすぎるとともに、エッチング除去する際に要する時間が長くなるので好ましくない。   The metal foil 12P is for providing a conductor layer that is a starting point in the production of the wiring board. The metal foil 12P is preferably made of a highly conductive metal such as copper (copper foil). As thickness of metal foil 12P, about 1-35 micrometers is mentioned, for example. Thereby, when this metal foil 12P is removed by etching, it can be removed by etching in a short time. The metal foil 12P having such a thickness does not have to be removed by etching, and can be suitably used as a part of a wiring conductor after etching into a predetermined pattern. On the other hand, if the thickness of the metal foil 12P is less than 1 μm, the strength of the metal foil 12P is lowered, and the workability when alternately laminating a plurality of insulating layers and conductor layers on the metal foil 12P may be lowered. If the thickness is larger than 35 μm, the thickness becomes unnecessarily thick, and the time required for etching removal becomes longer, which is not preferable.

前記粘着層としては、配線基板の製造中にかかる熱負荷に耐え得る上で、例えばシリコーン樹脂系、アクリル樹脂系、ポリオルガノシロキサン樹脂系等の耐熱性粘着材から成るのが好ましい。また、前記粘着剤層は、後述する配線基板用の積層体10を破損することなく支持フィルム1から分離する上で、厚みが0.01〜1.0μm程度であり、粘着力が1〜10N/m程度であるのが好ましい。   The pressure-sensitive adhesive layer is preferably made of a heat-resistant pressure-sensitive adhesive material such as a silicone resin-based resin, an acrylic resin-based resin, or a polyorganosiloxane resin-based material in order to withstand the heat load applied during the production of the wiring board. The pressure-sensitive adhesive layer has a thickness of about 0.01 to 1.0 μm and an adhesive strength of 1 to 10 N in order to separate from the support film 1 without damaging the laminate 10 for a wiring board described later. / M is preferable.

プリプレグ3Pは、後述する配線基板用の積層体10を製造する際に該積層体10を必要な平坦度を維持して支持するための支持基板3となるものであり、その主面に支持フィルム付き金属箔2や金属枠4を載置し、それらを上下から加圧しながら加熱することによりプリプレグ3Pに支持フィルム付き金属箔2や金属枠4が積層され、その状態で熱硬化する。プリプレグ3Pは、通常、厚み0.2〜2.0mm程度、1辺の長さ300〜1000mm程度の略四角形の平板で構成されるが、これに限定されるものではない。プリプレグ3Pとしては、例えばガラス繊維等の耐熱性繊維から成る織布にエポキシ樹脂等の熱硬化性樹脂を含浸させて半硬化状態のシート状としたもの等が挙げられる。   The prepreg 3P serves as a support substrate 3 for supporting the laminate 10 while maintaining the necessary flatness when the laminate 10 for a wiring board described later is manufactured, and a support film is provided on the main surface thereof. The attached metal foil 2 and the metal frame 4 are placed and heated while pressing them from above and below, whereby the metal foil 2 and the metal frame 4 with a support film are laminated on the prepreg 3P and are thermoset in that state. The prepreg 3P is generally formed of a substantially rectangular flat plate having a thickness of about 0.2 to 2.0 mm and a side length of about 300 to 1000 mm, but is not limited thereto. As the prepreg 3P, for example, a woven fabric made of heat-resistant fibers such as glass fibers is impregnated with a thermosetting resin such as an epoxy resin to form a semi-cured sheet.

金属枠4は、後述する配線基板用の積層体10を製造する際に、めっき用の電荷供給電極として使用するためのものであり、厚みが12〜35μm程度である。金属枠4としては、例えば銅等の良導電性金属から成るのが好ましい。   The metal frame 4 is for use as a charge supply electrode for plating when manufacturing a laminate 10 for a wiring board to be described later, and has a thickness of about 12 to 35 μm. The metal frame 4 is preferably made of a highly conductive metal such as copper.

上記のような各材料を準備した後、図2に示すように、プリプレグ3Pの主面中央部上に支持フィルム付き金属箔2を、支持フィルム1がプリプレグ3Pの主面と対向するようにして配置するとともに、プリプレグ3Pの主面外周部上に金属枠4を配置する。そして、これらを上下から0.5〜9MPaの圧力でプレスしながら130〜200℃の温度で30分間〜120分間程度加熱することにより、図3に示すように、プリプレグ3Pが熱硬化して形成された支持基板3の主面に、支持フィルム付き金属箔2を金属箔12Pの上面が露出するようにして積層するとともに、支持基板3の主面の外周部に、金属箔12Pを取り囲む金属枠4をその上面が露出するようにして積層する。   After preparing each material as described above, as shown in FIG. 2, the metal foil 2 with a support film is placed on the center of the main surface of the prepreg 3P, and the support film 1 faces the main surface of the prepreg 3P. While arrange | positioning, the metal frame 4 is arrange | positioned on the main surface outer peripheral part of the prepreg 3P. Then, by pressing them from above and below at a pressure of 0.5 to 9 MPa and heating them at a temperature of 130 to 200 ° C. for about 30 minutes to 120 minutes, as shown in FIG. 3, the prepreg 3P is formed by thermosetting. The metal foil 2 with the support film is laminated on the main surface of the support substrate 3 so that the upper surface of the metal foil 12P is exposed, and the metal frame surrounding the metal foil 12P on the outer peripheral portion of the main surface of the support substrate 3 4 is laminated so that its upper surface is exposed.

積層後は、露出した金属箔12Pの上面と、露出した金属枠4の上面と、金属箔12Pと金属枠4との間から露出した支持基板3の主面とが、実質的に同じ高さになる。これにより、後述する配線基板用の積層体10を平坦性に優れる面で支持することができるので、加工に伴う反りや、うねりの発生を抑制しつつ、積層体10を得ることができる。なお、露出した金属箔12Pの上面、金属枠4の上面、および金属箔12Pと金属枠4との間から露出した支持基板3の主面とは、完全に同一高さである必要はなく、これらの間に5μm以下の高低差があってもよい。   After the lamination, the upper surface of the exposed metal foil 12P, the upper surface of the exposed metal frame 4, and the main surface of the support substrate 3 exposed from between the metal foil 12P and the metal frame 4 are substantially the same height. become. Thereby, since the laminated body 10 for wiring boards which will be described later can be supported on a surface having excellent flatness, the laminated body 10 can be obtained while suppressing the occurrence of warpage and undulation associated with processing. The upper surface of the exposed metal foil 12P, the upper surface of the metal frame 4, and the main surface of the support substrate 3 exposed from between the metal foil 12P and the metal frame 4 do not have to be completely the same height. There may be a height difference of 5 μm or less between them.

次に、図4に示すように、実質的に同じ高さとなった金属箔12Pの上面および金属枠4の上面および支持基板3の主面上に絶縁層21を、その一方の主面が前記金属箔12Pの上面および金属枠4の上面および支持基板3の主面と密着するように積層する。このとき絶縁層21は、その一方の主面が前記金属箔12Pの上面および金属枠4の上面および支持基板3の主面と密着しているので、金属箔12Pと支持フィルム1との間が剥離することはない。なお、絶縁層21には金属枠4の外周側の一部を露出させる切欠き部30を絶縁層21の周方向における複数箇所で互いに向き合うように形成しておく。絶縁層21は、例えばエポキシ樹脂やビスマレイミドトリアジン樹脂等の熱硬化性樹脂にシリカやタルク等の無機絶縁性フィラーを分散させた電気絶縁材料から成る。あるいは、ガラスクロスに熱硬化性樹脂を含浸させた電気絶縁材料であってもよい。   Next, as shown in FIG. 4, the insulating layer 21 is provided on the upper surface of the metal foil 12P, the upper surface of the metal frame 4 and the main surface of the support substrate 3 having substantially the same height, and one of the main surfaces is the above-described main surface. The metal foil 12P is laminated so as to be in close contact with the upper surface of the metal foil 12P, the upper surface of the metal frame 4, and the main surface of the support substrate 3. At this time, since one main surface of the insulating layer 21 is in close contact with the upper surface of the metal foil 12P, the upper surface of the metal frame 4, and the main surface of the support substrate 3, the space between the metal foil 12P and the support film 1 is between. There is no peeling. The insulating layer 21 is formed with notches 30 that expose a part of the outer peripheral side of the metal frame 4 so as to face each other at a plurality of locations in the circumferential direction of the insulating layer 21. The insulating layer 21 is made of an electrically insulating material in which an inorganic insulating filler such as silica or talc is dispersed in a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin. Alternatively, an electrically insulating material in which a glass cloth is impregnated with a thermosetting resin may be used.

このような絶縁層21は、例えばエポキシ樹脂やビスマレイミドトリアジン樹脂等の熱硬化性樹脂の未硬化物に無機絶縁性フィラーを分散させた混合物をペースト状としたものを、露出した金属箔12Pの上面、露出した金属枠4の上面および金属箔12Pと金属枠4との間から露出した支持基板3の主面上に塗布した後に熱硬化させることによって形成される。また、これに限定されるものではなく、例えば前記混合物をフィルム状としたものやガラスクロスに未硬化の熱硬化性樹脂を含浸させたプリプレグを、露出した金属箔12Pの上面、露出した金属枠4の上面および金属箔12Pと金属枠4との間から露出した支持基板3の主面上に張着した後に熱硬化させることにより形成してもよい。   Such an insulating layer 21 is, for example, a paste-like mixture of inorganic curing fillers dispersed in an uncured thermosetting resin such as an epoxy resin or a bismaleimide triazine resin. It is formed by applying heat on the upper surface, the exposed upper surface of the metal frame 4, and the main surface of the support substrate 3 exposed from between the metal foil 12 </ b> P and the metal frame 4. Further, the present invention is not limited thereto. For example, a film of the above mixture or a prepreg impregnated with an uncured thermosetting resin in a glass cloth is exposed on the upper surface of the exposed metal foil 12P, an exposed metal frame. 4 and the main surface of the support substrate 3 exposed from between the upper surface of the metal foil 12P and between the metal foil 12P and the metal frame 4, and then thermally cured.

次に図5に示すように、絶縁層21には、金属箔12Pの一部を露出させるビア孔Vを形成する。ビア孔Vは、例えばレーザ加工により形成する。あるいは樹脂層21用の混合物に感光性を持たせておき、それにフォトリソグラフィー技術を採用して露光・現像処理を施すこと等により形成することもできるが、これらに限定されるものではない。   Next, as shown in FIG. 5, a via hole V that exposes a part of the metal foil 12 </ b> P is formed in the insulating layer 21. The via hole V is formed by laser processing, for example. Alternatively, the mixture for the resin layer 21 may be formed by imparting photosensitivity and then subjecting the mixture to exposure / development processing using a photolithography technique, but is not limited thereto.

次に、図6に示すように、絶縁層21の表面およびビア孔V内に金属箔12Pと接続する第1の配線導体11を所定のパターンに形成する。第1の配線導体11は、例えば無電解銅めっき膜および電解銅めっき膜等から成り、周知のセミアディティブ法によって形成するのが好ましい。セミアディティブ法は微細配線化に優れるので、薄型で高密度な配線基板を効率よく製造するのに好適である。   Next, as shown in FIG. 6, the first wiring conductor 11 connected to the metal foil 12P is formed in a predetermined pattern in the surface of the insulating layer 21 and in the via hole V. The first wiring conductor 11 is made of, for example, an electroless copper plating film and an electrolytic copper plating film, and is preferably formed by a known semi-additive method. Since the semi-additive method is excellent in fine wiring, it is suitable for efficiently manufacturing a thin and high-density wiring board.

具体的には、まず、絶縁層21の表面を必要に応じて粗化し、次にその表面に無電解銅めっき膜を0.1〜2.0μm程度の厚みに被着させる。このとき、切欠き部30から露出した金属枠4の表面にも無電解銅めっき膜を0.1〜2.0μm程度の厚みに被着させる。次に、絶縁層21の表面に被着した無電解銅めっき膜の表面に、第1の配線導体11に対応した開口部を有するめっきレジスト層を形成する。このめっきレジスト層は、感光性の樹脂フィルムを前記無電解銅めっき膜上に張着するとともに、その樹脂フィルムにフォトリソグラフィー技術を採用して露光・現像処理を施すことにより前記開口部を有するように形成される。次に、めっきレジスト層の開口部内に露出する前記無電解銅めっき膜上に電解銅めっき膜を5〜30μm程度の厚みに被着させる。このとき、切欠き部30から露出した金属枠4を電解めっき用の電荷を供給するための電荷供給電極として使用することができる。これにより、金属枠4と電解めっき装置の陰極とを電気的に確実に接続することができる。これに対し、金属枠4がない場合には、極めて薄い無電解めっき層に電解めっき装置の端子を接続することになり、無電解めっき層が擦れたり破れたりして安定した給電が困難になる。次に、めっきレジスト層を剥離した後、前記無電解銅めっき膜および電解銅めっき膜の露出部を電解銅めっき膜間の無電解銅めっき膜が消失するまで全体的にエッチングして第1の配線導体11を形成する。   Specifically, the surface of the insulating layer 21 is first roughened as necessary, and then an electroless copper plating film is deposited on the surface to a thickness of about 0.1 to 2.0 μm. At this time, the electroless copper plating film is also deposited on the surface of the metal frame 4 exposed from the notch 30 to a thickness of about 0.1 to 2.0 μm. Next, a plating resist layer having an opening corresponding to the first wiring conductor 11 is formed on the surface of the electroless copper plating film deposited on the surface of the insulating layer 21. The plating resist layer has the opening by sticking a photosensitive resin film on the electroless copper plating film and subjecting the resin film to exposure / development processing using a photolithography technique. Formed. Next, the electrolytic copper plating film is deposited to a thickness of about 5 to 30 μm on the electroless copper plating film exposed in the opening of the plating resist layer. At this time, the metal frame 4 exposed from the notch 30 can be used as a charge supply electrode for supplying a charge for electrolytic plating. Thereby, the metal frame 4 and the cathode of an electroplating apparatus can be electrically connected reliably. On the other hand, in the absence of the metal frame 4, the terminals of the electroplating apparatus are connected to an extremely thin electroless plating layer, and the electroless plating layer is rubbed or broken, making it difficult to stably supply power. . Next, after the plating resist layer is peeled off, the exposed portion of the electroless copper plating film and the electrolytic copper plating film is entirely etched until the electroless copper plating film between the electrolytic copper plating films disappears to form a first A wiring conductor 11 is formed.

このようにして第1の配線導体11を形成した後、図7に示すように、絶縁層21および第1の配線導体11の上に第1のソルダーレジスト層22を形成して銅箔12Pと絶縁層21と第1の配線導体11と第1のソルダーレジスト層22とから成る配線基板用の積層体10を形成する。   After forming the first wiring conductor 11 in this way, as shown in FIG. 7, a first solder resist layer 22 is formed on the insulating layer 21 and the first wiring conductor 11 to form the copper foil 12P. A laminate 10 for a wiring board composed of an insulating layer 21, a first wiring conductor 11, and a first solder resist layer 22 is formed.

ソルダーレジスト層22、例えばアクリル変性エポキシ樹脂にシリカやタルク等の無機物粉末フィラーを30〜70質量%程度分散させた電気絶縁材料から成り、アクリル変性エポキシ樹脂等の感光性樹脂と光重合開始剤等とから成る混合物にシリカやタルク等の無機絶縁性フィラーを含有させた感光性樹脂ペーストを、絶縁層21および第1の配線導体11の上にスクリーン印刷やロールコート法等により10〜30μm程度の厚みに塗布し、しかる後、フォトリソグラフィー技術を採用して所定のパターンに露光・現像した後、それを紫外線硬化および熱硬化させることにより形成するのが好ましい。   Solder resist layer 22, for example, an electrically insulating material in which inorganic powder fillers such as silica and talc are dispersed in an acrylic modified epoxy resin in an amount of about 30 to 70% by mass, a photosensitive resin such as an acrylic modified epoxy resin and a photopolymerization initiator, etc. A photosensitive resin paste in which an inorganic insulating filler such as silica or talc is contained in a mixture of the above is applied to the insulating layer 21 and the first wiring conductor 11 by a screen printing or roll coating method or the like to a thickness of about 10 to 30 μm. It is preferably formed by applying to a thickness, and then exposing and developing to a predetermined pattern using a photolithographic technique, followed by ultraviolet curing and heat curing.

次に、図8に示すように、金属枠4の内側領域に位置する積層体10および支持基板3を切断する。かかる切断を効率よく行なう上で、積層体10および支持フィルム1および支持基板3を、金属箔12Pの外周から10〜30mm内側に位置する部分で切断して、図9に示すように、積層体10の中央部を支持フィルム1および支持基板3とともに切り出すのが好ましい。前記切断の方法は、本発明の効果を妨げない範囲内で任意であり、例えばダイシングやルーター装置等を用いて切断すればよい。   Next, as shown in FIG. 8, the laminated body 10 and the support substrate 3 located in the inner region of the metal frame 4 are cut. In order to efficiently perform such cutting, the laminate 10, the support film 1, and the support substrate 3 are cut at a portion located 10 to 30 mm inside from the outer periphery of the metal foil 12 </ b> P, and as shown in FIG. It is preferable to cut out the central portion of 10 together with the support film 1 and the support substrate 3. The cutting method is arbitrary as long as the effect of the present invention is not hindered. For example, the cutting may be performed using a dicing or a router device.

次に、図10に示すように、切り出した積層体10を支持フィルム1から分離する。この分離の際には、支持フィルム1上に金属箔12Pが図示しない粘着層を介して保持されているだけなので、支持フィルム1と金属箔12P間を引き剥がすだけで積層体10を破損することなく、簡単に分離することができる。   Next, as shown in FIG. 10, the cut laminate 10 is separated from the support film 1. In this separation, since the metal foil 12P is only held on the support film 1 via an adhesive layer (not shown), the laminate 10 is damaged only by peeling off the support film 1 and the metal foil 12P. And can be easily separated.

次に、図11に示すように、金属箔12Pを所定のパターンにエッチングするエッチング工程を施して絶縁層21の他方の主面に第2の配線導体12を形成する。金属箔12Pを所定のパターンにエッチングするには、例えば配線導体に対応する形状のエッチングレジスト層を金属箔12Pの表面に形成するとともに、そのエッチングレジスト層から露出した金属箔12Pをエッチング除去すればよい。なお、前記エッチングレジスト層は、感光性の樹脂フィルムを金属箔12P上に張着するとともに、その樹脂フィルムにフォトリソグラフィー技術を採用して露光・現像処理を施すことにより前記配線導体に対応する形状に形成され、金属箔12Pをエッチングした後に剥離する。   Next, as shown in FIG. 11, the second wiring conductor 12 is formed on the other main surface of the insulating layer 21 by performing an etching process for etching the metal foil 12 </ b> P into a predetermined pattern. In order to etch the metal foil 12P into a predetermined pattern, for example, an etching resist layer having a shape corresponding to the wiring conductor is formed on the surface of the metal foil 12P, and the metal foil 12P exposed from the etching resist layer is removed by etching. Good. The etching resist layer has a shape corresponding to the wiring conductor by sticking a photosensitive resin film on the metal foil 12P and subjecting the resin film to exposure / development processing using a photolithography technique. After the metal foil 12P is etched, it is peeled off.

最後に、図12に示すように、第2の配線導体12および絶縁層21の表面に第2のソルダーレジスト層23を形成して本実施形態にかかる配線基板20を得る。このように本実施形態によれば、支持基板3上に直接積層体10を形成するのではなく、まず支持基板3の主面に、支持フィルム付き金属箔2を金属箔12Pの上面が露出するようにして積層し、ついで前記金属箔12P上に絶縁層21と第1の配線導体11とを積層して積層体10を得るので、支持フィルム付き金属箔2の支持フィルム1を積層体10と支持基板3とを分離する際にその分離を容易とするための境界層として機能させることができ、その結果、積層体10を支持基板3から短時間の間に容易に剥離することができる。しかも、金属箔12Pは、所定パターンにエッチングして第1の配線導体11の一部として利用することができる。したがって、本実施形態によれば、薄型で高密度な配線基板20を効率よく製造することが可能となる。なお、第2のソルダーレジスト層23は、第1のソルダーレジスト層22と同様の材料から成り、第1のソルダーレジスト層22と同様の方法によって形成される。   Finally, as shown in FIG. 12, a second solder resist layer 23 is formed on the surfaces of the second wiring conductor 12 and the insulating layer 21 to obtain the wiring board 20 according to the present embodiment. As described above, according to the present embodiment, the laminated body 10 is not directly formed on the support substrate 3, but the metal foil 2 with the support film is first exposed on the main surface of the support substrate 3. In this manner, the insulating layer 21 and the first wiring conductor 11 are laminated on the metal foil 12P to obtain the laminated body 10. Therefore, the supporting film 1 of the metal foil 2 with the supporting film is laminated with the laminated body 10. When separating from the support substrate 3, it can function as a boundary layer for facilitating the separation, and as a result, the laminate 10 can be easily peeled from the support substrate 3 in a short time. In addition, the metal foil 12P can be used as a part of the first wiring conductor 11 by etching into a predetermined pattern. Therefore, according to the present embodiment, the thin and high-density wiring board 20 can be efficiently manufactured. The second solder resist layer 23 is made of the same material as that of the first solder resist layer 22 and is formed by the same method as that of the first solder resist layer 22.

前記した一実施形態では、1枚の支持基板3上に配線基板用の積層体10を形成した場合について説明したが、本発明にかかる他の実施形態として、例えば2枚の支持基板3を背中合わせに重ね合わせ、それぞれの支持基板3の外側主面に配線基板用の積層体10を同時に形成してもよい。図13は、本実施形態にかかる配線基板の製造方法を示す概略断面図であり、上記で説明した図1に相当する図である。なお、図13においては、前述した図1〜12と同一の構成部分には同一の符号を付して説明は省略する。   In the above-described embodiment, the case where the laminated body 10 for the wiring substrate is formed on one support substrate 3 has been described. However, as another embodiment according to the present invention, for example, two support substrates 3 are back to back. The laminated body 10 for the wiring board may be simultaneously formed on the outer main surface of each support substrate 3. FIG. 13 is a schematic cross-sectional view illustrating the method for manufacturing the wiring board according to the present embodiment, and corresponds to FIG. 1 described above. In FIG. 13, the same components as those shown in FIGS.

図13に示すように、本実施形態にかかる積層体10を形成する工程は、まず、支持フィルム付き金属箔2と、支持基板3用のプリプレグ3Pと、金属枠体4と、分離フィルム5とをそれぞれ2枚ずつ準備する。分離フィルム5は、各支持基板3上に積層体10を形成した後、2枚の支持基板3同士を容易に分離させるための境界層として機能するものである。分離フィルム5は、例えば銅箔等の金属箔や、ポリエチレンテレフタレート(PET)フィルム等の耐熱フィルム等から成るのが好ましい。分離フィルム5の厚さとしては、例えば1〜35μm程度であるのが好ましい。   As shown in FIG. 13, the step of forming the laminated body 10 according to the present embodiment first includes the metal foil 2 with a support film, the prepreg 3P for the support substrate 3, the metal frame 4, and the separation film 5. Prepare two each. The separation film 5 functions as a boundary layer for easily separating the two support substrates 3 from each other after the laminated body 10 is formed on each support substrate 3. The separation film 5 is preferably made of a metal foil such as a copper foil or a heat resistant film such as a polyethylene terephthalate (PET) film. The thickness of the separation film 5 is preferably about 1 to 35 μm, for example.

このような分離フィルム5を含む各材料を準備した後、図14〜図19に示すようにして積層体10を得、この積層体10を用いて配線基板20を得る。すなわち、図14に示すように、2枚のプリプレグ3Pにおける中央部の間に分離フィルム5を2枚重ねて挟持するとともに、各プリプレグ3Pの外側の主面中央部上に支持フィルム付き金属箔2と、前記外側主面の外周部に金属枠4とをそれぞれ配置する。次に、これらを上下からプレスしながら加熱することにより、図15に示すように、プリプレグ3Pが熱硬化して形成一体化された2枚の支持基板3の間に、2枚の分離フィルム5を互いに重なった状態で封入するとともに、各支持基板3の外側主面に支持フィルム付き金属箔2および金属枠4を積層する。このとき、2枚の分離フィルム5は、互いに接着されておらず、支持基板3とのみ接着している。   After preparing each material including such a separation film 5, as shown in FIGS. 14-19, the laminated body 10 is obtained and the wiring board 20 is obtained using this laminated body 10. FIG. That is, as shown in FIG. 14, the two separation films 5 are sandwiched and sandwiched between the central portions of the two prepregs 3P, and the metal foil 2 with a support film is provided on the central portion of the main surface outside each prepreg 3P. And the metal frame 4 is arrange | positioned at the outer peripheral part of the said outer main surface, respectively. Next, by heating them while pressing them from above and below, as shown in FIG. 15, two separation films 5 are sandwiched between two support substrates 3 formed and integrated by thermosetting the prepreg 3P. Are overlapped with each other, and a metal foil 2 with a support film and a metal frame 4 are laminated on the outer main surface of each support substrate 3. At this time, the two separation films 5 are not bonded to each other, and are bonded only to the support substrate 3.

次に、図16に示すように、2枚の支持基板3の各外側主面上に配線基板用の積層体10をそれぞれ同時に形成する。なお、各積層体10の形成は、前記一実施形態において図4〜図7を基にして説明した工程と同様にして行なう。   Next, as shown in FIG. 16, wiring board laminates 10 are simultaneously formed on the outer main surfaces of the two support substrates 3. In addition, formation of each laminated body 10 is performed similarly to the process demonstrated based on FIGS. 4-7 in the said one Embodiment.

次に、図17に示すように、積層体10、支持フィルム1および支持基板3ならびに分離フィルム5を、金属箔12Pの外周から10〜30mm内側に位置する部分で切断することにより、図18に示すように、各積層体10の中央部を支持フィルム1および支持基板3ならびに剥離フィルム5とともに切り出す。このとき、剥離フィルム5同士は接着されていないので、両者は容易に分離される。   Next, as shown in FIG. 17, the laminate 10, the support film 1, the support substrate 3, and the separation film 5 are cut at a portion located 10 to 30 mm inside from the outer periphery of the metal foil 12 </ b> P. As shown, the central part of each laminate 10 is cut out together with the support film 1, the support substrate 3, and the release film 5. At this time, since the release films 5 are not bonded to each other, both are easily separated.

次に、図19に示すように、切り出した各積層体10を前記一実施形態の場合と同様にして支持フィルム1から分離する。これにより、2つの積層体10を得ることができるので、前記一実施形態よりも積層体10を形成する際の効率を約2倍に高めることができる。その後、分離した各積層体10に、前記一実施形態において図11,図12を基に説明した工程を施すことにより、2つの配線基板20を得る。したがって、本実施形態によれば、薄型で高密度な配線基板20を更に効率よく製造することが可能となる。   Next, as shown in FIG. 19, each cut-out laminated body 10 is separated from the support film 1 in the same manner as in the embodiment. Thereby, since the two laminated bodies 10 can be obtained, the efficiency at the time of forming the laminated body 10 can be improved about twice compared with the said one Embodiment. Then, two wiring boards 20 are obtained by performing the process explained based on FIG. 11 and FIG. Therefore, according to the present embodiment, the thin and high-density wiring board 20 can be manufactured more efficiently.

本発明にかかる更に他の実施形態として、2枚の支持基板3を、これら間に両者の分離を容易とするための別の分離用基板を介在させて重ね合わせ、それぞれの支持基板3の外側主面に配線基板用の積層体10を同時に形成してもよい。図20は、本実施形態にかかる配線基板の製造方法を示す概略断面図であり、上記で説明した図1,図13に相当する図である。なお、図20においては、前述した図1〜19と同一の構成部分には同一の符号を付して説明は省略する。   As still another embodiment according to the present invention, two support substrates 3 are overlapped with another separation substrate interposed between them to facilitate separation of the two, and the outside of each support substrate 3. A laminate 10 for a wiring board may be simultaneously formed on the main surface. FIG. 20 is a schematic cross-sectional view illustrating the method for manufacturing the wiring board according to the present embodiment, and corresponds to FIGS. 1 and 13 described above. In FIG. 20, the same components as those shown in FIGS.

図20に示すように、本実施形態にかかる積層体10を形成する工程は、まず、支持フィルム付き金属箔2と、支持基板3用のプリプレグ3Pと、金属枠体4と、分離フィルム5とをそれぞれ2枚ずつ準備するとともに、分離用基板6を1枚準備する。分離用基板6は、各支持基板3上に積層体10を形成した後、2枚の支持基板3同士を容易に分離させるための境界層として機能するものである。分離用基板6は、例えば厚みが50〜400μm程度のガラス−エポキシ板7の両面に、厚みが12〜35μm程度の銅箔8を積層した両面銅張板等から成る。   As shown in FIG. 20, the process of forming the laminated body 10 concerning this embodiment first, the metal foil 2 with a support film, the prepreg 3P for the support substrate 3, the metal frame 4, and the separation film 5 and Are prepared two by two, and one separation substrate 6 is prepared. The separation substrate 6 functions as a boundary layer for easily separating the two support substrates 3 from each other after the laminated body 10 is formed on each support substrate 3. The separation substrate 6 is made of, for example, a double-sided copper-clad plate in which a copper foil 8 having a thickness of about 12 to 35 μm is laminated on both surfaces of a glass-epoxy plate 7 having a thickness of about 50 to 400 μm.

このような分離用基板6を含む各材料を準備した後、図21〜図25に示すようにして積層体10を得、この積層体10を用いて配線基板20を得る。すなわち、図21に示すように、2枚のプリプレグ3P間に分離用基板6を挟むとともに、分離用基板6とプリプレグ3Pとの間の中央部に分離フィルム5を配置し、さらに各プリプレグ3Pの外側の主面中央部上に支持フィルム付き金属箔2と、前記外側主面の外周部に金属枠4とをそれぞれ配置する。   After preparing each material including such a separation substrate 6, a laminate 10 is obtained as shown in FIGS. 21 to 25, and a wiring substrate 20 is obtained using the laminate 10. That is, as shown in FIG. 21, the separation substrate 6 is sandwiched between the two prepregs 3P, the separation film 5 is disposed at the center between the separation substrate 6 and the prepreg 3P, and each prepreg 3P A metal foil 2 with a support film is disposed on the outer main surface central portion, and a metal frame 4 is disposed on the outer peripheral portion of the outer main surface.

次に、これらを上下からプレスしながら加熱することにより、図22に示すように、プリプレグ3Pが熱硬化した2枚の支持基板3の間に分離用基板6を積層一体化するとともに、分離用基板6と支持基板3との間に分離フィルム5を封入し、さらに各支持基板3の外側主面に支持フィルム付き金属箔2および金属枠4を積層する。このとき、分離用基板6と分離フィルム5とは互いに接着されておらず、支持基板3とのみ接着している。   Next, by heating them while pressing them from above and below, as shown in FIG. 22, the separation substrate 6 is laminated and integrated between the two support substrates 3 on which the prepreg 3P is thermally cured, and for separation. The separation film 5 is sealed between the substrate 6 and the support substrate 3, and the metal foil 2 with support film and the metal frame 4 are laminated on the outer main surface of each support substrate 3. At this time, the separation substrate 6 and the separation film 5 are not bonded to each other, and are bonded only to the support substrate 3.

次に、図23に示すように、2枚の支持基板3の各外側主面上に配線基板用の積層体10をそれぞれ同時に形成する。なお、各積層体10の形成は、前記一実施形態において図4〜図7を基にして説明した工程と同様にして行なう。   Next, as shown in FIG. 23, the laminated bodies 10 for wiring boards are simultaneously formed on the outer main surfaces of the two supporting boards 3, respectively. In addition, formation of each laminated body 10 is performed similarly to the process demonstrated based on FIGS. 4-7 in the said one Embodiment.

次に、図24に示すように、積層体10、支持フィルム1、支持基板3および分離フィルム5ならびに分離用基板6を、金属箔12Pの外周から10〜30mm内側に位置する部分で切断することにより各積層体10の中央部を支持フィルム1および支持基板3ならびに剥離フィルム5とともに切り出す。このとき、分離フィルム5と分離用基板6とは接着されていないので、両者は容易に分離される。   Next, as shown in FIG. 24, the laminate 10, the support film 1, the support substrate 3, the separation film 5, and the separation substrate 6 are cut at a portion located 10 to 30 mm inside from the outer periphery of the metal foil 12 </ b> P. The center part of each laminated body 10 is cut out with the support film 1, the support substrate 3, and the peeling film 5. At this time, since the separation film 5 and the separation substrate 6 are not bonded, they are easily separated.

次に、図25に示すように、前記他の実施形態において図19を基に説明したのと同様にして、切り出した積層体10を支持フィルム1から分離する。これにより、2つの積層体10を得ることができるので、前記一実施形態よりも積層体10を形成する効率を約2倍に高めることができる。その後、分離した各積層体10に、前記一実施形態において図11,図12を基に説明した工程を施すことにより、2つの配線基板20を得る。したがって、本実施形態によれば、薄型で高密度な配線基板20を更に効率よく製造することが可能となる。   Next, as shown in FIG. 25, the cut laminate 10 is separated from the support film 1 in the same manner as described based on FIG. 19 in the other embodiment. Thereby, since the two laminated bodies 10 can be obtained, the efficiency which forms the laminated body 10 can be raised about 2 time compared with the said one Embodiment. Then, two wiring boards 20 are obtained by performing the process explained based on FIG. 11 and FIG. Therefore, according to the present embodiment, the thin and high-density wiring board 20 can be manufactured more efficiently.

かくして本発明の配線基板の製造方法によれば、薄型で高密度な配線基板を効率よく製造することができる。なお、本発明は、上述の実施の形態例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば、種々の変更が可能であることは言うまでもない。例えば、前記したいくつかの実施形態では、金属箔12Pは、所定パターンにエッチングして配線導体の一部として利用する場合について説明したが、本発明はこれに限定されるものではなく、図26に示すように、必要に応じて該金属箔12Pを全てエッチング除去してもよい。この場合には、絶縁層21のビア内に露出する第1の配線導体11が外部接続用のパッド等となる。   Thus, according to the method for manufacturing a wiring board of the present invention, a thin and high-density wiring board can be efficiently manufactured. It should be noted that the present invention is not limited to the above-described embodiment, and it goes without saying that various modifications can be made without departing from the gist of the present invention. For example, in the several embodiments described above, the case where the metal foil 12P is etched into a predetermined pattern and used as a part of the wiring conductor has been described, but the present invention is not limited to this, and FIG. As shown in FIG. 4, the metal foil 12P may be entirely removed by etching as necessary. In this case, the first wiring conductor 11 exposed in the via of the insulating layer 21 serves as an external connection pad or the like.

金属枠4を電荷供給電極として使用する上で、絶縁層21に切欠き部30を形成した場合について説明したが、切欠き部30に代えて、例えば金属枠4の全ての外周側が枠状に露出するように絶縁層21を積層してもよい。   In the case where the metal frame 4 is used as the charge supply electrode, the case where the notched portion 30 is formed in the insulating layer 21 has been described. However, instead of the notched portion 30, for example, all the outer peripheral sides of the metal frame 4 are frame-shaped. The insulating layer 21 may be laminated so as to be exposed.

さらには、図27に示すように、金属箔12Pの上に、例えば銅めっき等のめっき導体から成る第2の配線導体12をセミアディティブ法やフルアディティブ法等により所定パターンに析出させて被着し、その上に絶縁層21と第1の配線導体11とを積層し、第2の配線導体12を構成要素として含む配線基板用の積層体10を形成し、これを切り出して支持フィルム1より分離した後、図28に示すように、金属箔12Pを全てエッチング除去して第2の配線導体12を露出させてもよい。この場合、第2の配線導体12は、セミアディティブ法やフルアディティブ法等により所定パターンに析出させためっき導体から成ることから、金属箔12Pを所定パターンにエッチングして第2の配線導体12を形成する場合と比較して微細かつ狭ピッチの配線導体を実現することができる。さらに、第2の配線導体12が絶縁層21に埋設された状態となるため第2の配線導体12における隣接するパターン同士の電気的な絶縁信頼性が優れたものとなるとともに、第2の配線導体12が絶縁層21に埋設される分だけ、即ち第2の配線導体12の厚み分だけ配線基板20の全体厚みを薄いものとすることができる。   Furthermore, as shown in FIG. 27, the second wiring conductor 12 made of a plating conductor such as copper plating is deposited on the metal foil 12P in a predetermined pattern by a semi-additive method or a full additive method. Then, the insulating layer 21 and the first wiring conductor 11 are laminated thereon to form the wiring board laminated body 10 including the second wiring conductor 12 as a constituent element, which is cut out from the support film 1. After the separation, the second wiring conductor 12 may be exposed by etching away all of the metal foil 12P as shown in FIG. In this case, since the second wiring conductor 12 is made of a plating conductor deposited in a predetermined pattern by a semi-additive method or a full additive method, the second wiring conductor 12 is etched by etching the metal foil 12P into the predetermined pattern. Compared with the case where it forms, the wiring conductor of a fine and narrow pitch is realizable. Furthermore, since the second wiring conductor 12 is embedded in the insulating layer 21, the electrical insulation reliability between adjacent patterns in the second wiring conductor 12 is excellent, and the second wiring The entire thickness of the wiring board 20 can be reduced by the amount of the conductor 12 embedded in the insulating layer 21, that is, by the thickness of the second wiring conductor 12.

本発明の一実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on one Embodiment of this invention. 本発明の一実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on one Embodiment of this invention. 本発明の一実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on one Embodiment of this invention. 本発明の一実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on one Embodiment of this invention. 本発明の一実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on one Embodiment of this invention. 本発明の一実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on one Embodiment of this invention. 本発明の一実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on one Embodiment of this invention. 本発明の一実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on one Embodiment of this invention. 本発明の一実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on one Embodiment of this invention. 本発明の一実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on one Embodiment of this invention. 本発明の一実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on one Embodiment of this invention. 本発明の一実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on one Embodiment of this invention. 本発明の他の実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on other embodiment of this invention. 本発明の他の実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on other embodiment of this invention. 本発明の他の実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on other embodiment of this invention. 本発明の他の実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on other embodiment of this invention. 本発明の他の実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on other embodiment of this invention. 本発明の他の実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on other embodiment of this invention. 本発明の他の実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on other embodiment of this invention. 本発明のさらに他の実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on further another embodiment of this invention. 本発明のさらに他の実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on further another embodiment of this invention. 本発明のさらに他の実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on further another embodiment of this invention. 本発明のさらに他の実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on further another embodiment of this invention. 本発明のさらに他の実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on further another embodiment of this invention. 本発明のさらに他の実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on further another embodiment of this invention. 本発明のさらに他の実施形態に係る配線基板を示す概略断面図である。It is a schematic sectional drawing which shows the wiring board which concerns on further another embodiment of this invention. 本発明のさらに他の実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on further another embodiment of this invention. 本発明のさらに他の実施形態に係る配線基板の製造工程を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating the manufacturing process of the wiring board which concerns on further another embodiment of this invention.

符号の説明Explanation of symbols

1 支持フィルム
2 支持フィルム付き金属箔
3P プリプレグ
3 支持基板
4 金属枠
5 分離フィルム
6 分離用基板
10 配線基板用の積層体
11 第1の配線導体
12P 銅箔
21絶縁層
20 配線基板
30 切欠き部
DESCRIPTION OF SYMBOLS 1 Support film 2 Metal foil with support film 3P prepreg 3 Support substrate 4 Metal frame 5 Separation film 6 Separation board 10 Laminate for wiring board 11 First wiring conductor 12P Copper foil 21 Insulating layer 20 Wiring board 30 Notch

Claims (4)

支持フィルム上に金属箔が粘着層を介して保持された支持フィルム付き金属箔の前記金属箔上に、樹脂を含有する電気絶縁材料から成る絶縁層を積層するとともに該絶縁層に複数のビア孔を形成する工程と、前記絶縁層上および前記ビア孔内に前記金属箔に接続するめっき導体から成る第1の配線導体を所定のパターンに析出させて被着する工程と、前記支持フィルム上に支持された前記金属箔と前記絶縁層と前記第1の配線導体とを含む積層体を前記支持フィルムから分離する工程とを含むことを特徴とする配線基板の製造方法。   An insulating layer made of an electrically insulating material containing a resin is laminated on the metal foil of the metal foil with a supporting film, on which the metal foil is held via an adhesive layer, and a plurality of via holes are formed in the insulating layer. Forming a first wiring conductor made of a plating conductor connected to the metal foil on the insulating layer and in the via hole and depositing the first wiring conductor in a predetermined pattern; and on the support film A method of manufacturing a wiring board, comprising: separating a laminated body including the supported metal foil, the insulating layer, and the first wiring conductor from the supporting film. 前記積層体を形成する工程の前に、前記支持フィルム付き金属箔を、該支持フィルム付き金属箔よりも広い平坦な主面を有する支持基板の前記主面の中央部に、前記金属箔が露出するようにして積層する工程を含み、前記絶縁層を前記金属箔上から該金属箔の外側の前記支持基板上まで延在させて積層するとともに該絶縁層上に前記第1の配線導体を被着して前記支持基板の前記主面の中央部上に前記積層体を形成する請求項1記載の配線基板の製造方法。   Prior to the step of forming the laminate, the metal foil is exposed to the central portion of the main surface of the support substrate having a flat main surface wider than the metal foil with the support film. And laminating the insulating layer by extending the insulating layer from the metal foil to the support substrate outside the metal foil and covering the first wiring conductor on the insulating layer. The method for manufacturing a wiring board according to claim 1, wherein the laminated body is formed on a central portion of the main surface of the support substrate. 前記支持フィルム付き金属箔を前記支持基板の主面に積層する工程は、さらに前記支持基板の前記主面の外周部に、前記金属箔を取り囲む金属枠を、該金属枠の一方の主面が露出するように積層する工程を含む請求項2記載の配線基板の製造方法。   The step of laminating the metal foil with the support film on the main surface of the support substrate further includes a metal frame surrounding the metal foil on the outer peripheral portion of the main surface of the support substrate, and one main surface of the metal frame is The method for manufacturing a wiring board according to claim 2, comprising a step of laminating so as to be exposed. 前記積層体を前記支持フィルムから分離する工程の前に、前記金属箔の外周縁の内側領域に位置する前記積層体および支持基板を残余の部分から切り出す工程を含む請求項2または3に記載の配線基板の製造方法。   4. The method according to claim 2, further comprising a step of cutting out the laminate and the support substrate located in an inner region of an outer peripheral edge of the metal foil from a remaining portion before the step of separating the laminate from the support film. A method for manufacturing a wiring board.
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Cited By (5)

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JP2012015334A (en) * 2010-06-30 2012-01-19 Kyocer Slc Technologies Corp Wiring board and its manufacturing method
JP2015082535A (en) * 2013-10-21 2015-04-27 味の素株式会社 Wiring board manufacturing method
JP2016033967A (en) * 2014-07-31 2016-03-10 新光電気工業株式会社 Support medium, wiring board and manufacturing method of the same, and semiconductor package manufacturing method
WO2016143117A1 (en) * 2015-03-12 2016-09-15 三井金属鉱業株式会社 Metal foil with carrier, and manufacturing method for wiring board
WO2023008967A1 (en) * 2021-07-30 2023-02-02 엘지이노텍 주식회사 Circuit board and semiconductor package comprising same

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JP2003347452A (en) * 2002-05-27 2003-12-05 Tdk Corp Structure for electronic component
JP2005243986A (en) * 2004-02-27 2005-09-08 Ngk Spark Plug Co Ltd Method for manufacturing wiring board
JP2009038134A (en) * 2007-07-31 2009-02-19 Kyocer Slc Technologies Corp Manufacturing method for wiring board

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JP2003347452A (en) * 2002-05-27 2003-12-05 Tdk Corp Structure for electronic component
JP2005243986A (en) * 2004-02-27 2005-09-08 Ngk Spark Plug Co Ltd Method for manufacturing wiring board
JP2009038134A (en) * 2007-07-31 2009-02-19 Kyocer Slc Technologies Corp Manufacturing method for wiring board

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012015334A (en) * 2010-06-30 2012-01-19 Kyocer Slc Technologies Corp Wiring board and its manufacturing method
JP2015082535A (en) * 2013-10-21 2015-04-27 味の素株式会社 Wiring board manufacturing method
JP2016033967A (en) * 2014-07-31 2016-03-10 新光電気工業株式会社 Support medium, wiring board and manufacturing method of the same, and semiconductor package manufacturing method
US9997441B2 (en) 2014-07-31 2018-06-12 Shinko Electric Industries Co., Ltd. Support member, wiring substrate, method for manufacturing wiring substrate, and method for manufacturing semiconductor package
WO2016143117A1 (en) * 2015-03-12 2016-09-15 三井金属鉱業株式会社 Metal foil with carrier, and manufacturing method for wiring board
WO2023008967A1 (en) * 2021-07-30 2023-02-02 엘지이노텍 주식회사 Circuit board and semiconductor package comprising same

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