JP2009206215A - Manufacturing method of light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a light emitting device capable of efficiently converging part of light emitted from a light emitting element on an optical detecting element. <P>SOLUTION: The manufacturing method of the light emitting device includes a first bonding step (Fig. 1(a)) of bonding a silicon substrate (first silicon substrate) 40a where the optical detecting element 4 is formed and a substrate 30 for light distribution, a resist layer forming step (Fig. 1(d)) of forming a resist layer 5 covering at least a part of one surface side of the silicon substrate 40a which faces an opening window 31 of the substrate 30 for light distribution, a light extraction window forming step (Fig. 1(f)) of forming a light extraction window 41 by performing dry etching from the other surface side of the silicon substrate 40a while using a resist mask layer 42, having an opening where a light extraction window 41 of the silicon substrate 40a is to be formed, as a mask and the resist layer 52 as an etching stopper layer, and a resist layer removing step (Fig. 1(g)) of removing the resist layer 52. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a light emitting device using a light emitting element such as a light emitting diode chip (LED chip).

  Conventionally, as shown in FIG. 14, a light-emitting element 1 made of an LED chip and a storage recess 2a that is formed using three silicon substrates 20a, 30a, and 40a and stores the light-emitting element 1 are formed on one surface. And a photodetecting element 4 made of a photodiode for detecting light emitted from the light emitting element 1 is provided on a projecting portion 2c projecting inwardly from the peripheral portion of the housing recess 2a. A formed light emitting device has been proposed (see Patent Document 1).

  Here, the mounting substrate 2 described above is formed using the silicon substrate 20a, the base substrate 20 on which the light emitting element 1 is mounted on one surface side, and the one surface side of the base substrate 20 formed using the silicon substrate 40a. Between the base substrate 20 and the photodetecting element forming substrate 40 formed by using the silicon substrate 30a and the photodetecting element forming substrate 40 on which the photoextracting window 41 and the photodetecting element 4 are formed. An aperture window 31 that is interposed therebetween and communicates with the light extraction window 41 is formed, and the inner surface of the aperture window 31 serves as a mirror surface 2 d that guides a part of the light emitted from the light emitting element 1 to the light detection element 4. The through-hole wirings 24 and 34 that are electrically connected to the photodetecting element 4 are formed in the base substrate 20 and the light distribution substrate 30, respectively. Element 1 and electrically connected to the through-hole wiring (not shown) is formed.

  In the light emitting device having the configuration shown in FIG. 14 described above, the storage recess 2a in which the light emitting element 1 is stored protrudes inward from the peripheral portion of the storage recess 2a in the mounting substrate 2 formed on the one surface. Since the light detection element 4 for detecting the light emitted from the light emitting element 1 is formed on the protrusion 2c, the light detection element 4 is arranged around the housing recess 2a on the one surface side of the mounting substrate 2. Therefore, there is an advantage that it is not necessary to separately secure a space for this purpose, and downsizing is possible while the photodetecting element 4 is provided on the mounting substrate 2.

  Further, in the above-mentioned Patent Document 1, in manufacturing the above-described light emitting device, as shown in FIG. 15, a first bonding step of bonding the silicon substrate 40a on which the light detection element 4 is formed and the light distribution substrate 30 are bonded. Then, a polishing step for polishing the silicon substrate 40a to a desired thickness is performed, followed by a light extraction window forming step for forming a light extraction window 41 on the silicon substrate 40a, and then the light emitting element 1 is mounted. The second bonding step of bonding the base substrate 20 and the light distribution substrate 30 to each other is performed, and in the first bonding step and the second bonding step, the bonding surfaces of each other are activated before bonding. After that, it is described that the bonding surfaces are brought into contact with each other to perform normal temperature bonding.

By the way, if it demonstrates in detail about the grinding | polishing process and light extraction window formation process in the above-mentioned manufacturing method, after the 1st joining process, the polishing tape 50 on the opposite side to the silicon substrate 40a side in the light distribution substrate 30 is demonstrated. The structure shown in FIG. 16A is obtained by performing the polishing process after attaching the film, and then, on the other surface side of the silicon substrate 40a opposite to the one surface side on the light distribution substrate 30 side. A resist mask layer 42 having an opening corresponding to the light extraction window 41 is formed to obtain the structure shown in FIG. 16B. Thereafter, the silicon substrate 40a is dry-etched from the other surface side to obtain light. By performing the light extraction window forming step for forming the extraction window 41, the structure shown in FIG. Here, in the light extraction window forming step, as shown in FIG. 17, a refrigerant gas (He gas) is formed in a space surrounded by the substrate holding unit 60 and the polishing tape 50 arranged in the chamber CH of the dry etching apparatus. The light extraction window 41 is formed by performing dry etching in a state where 60 is satisfied. Here, all processes are performed at the wafer level until the second bonding process is completed. In the light extraction window forming process, as shown in FIG. 18, a wafer 300 on which a large number of light distribution substrates 30 are formed. And a wafer 400 that is the basis of a large number of light detection element forming substrates 40 and the wafer 300 is affixed with the polishing tape 50 is held by the substrate holding unit 60 in the chamber CH. A large number of light extraction windows 41 are collectively formed by performing dry etching in a state where the refrigerant gas 60 is filled in a space surrounded by the polishing tape 50.
JP 2007-294834 A

  However, in the above-described method for manufacturing a light emitting device, in the above-described light extraction window forming step, due to in-plane variations in the thickness of the silicon substrate 40a and the etching rate, as shown in FIG. Since there is a difference in the time at which etching is completed at the site where the light extraction window 41 is to be formed in FIG. 2, it is necessary to perform over-etching, and the traveling direction of etching species (ions, etc.) during over-etching is easy to change. The mirror surface 2d which collides with the mirror surface 2d formed of the inner surface of the opening window 31 of the light distribution substrate 30 in the direction indicated by the arrow inside is damaged by etching and the surface roughness of the mirror surface 2d increases. In the light emitting device described above, when the surface roughness of the mirror surface 2d increases, the light collection efficiency of the mirror surface 2d on the light detection element 4 decreases, and the S / N ratio of the output of the light detection element 4 decreases. End up.

  Further, in the above-described light emitting device manufacturing method, the polishing tape 50 and the atmospheric layer 51 are interposed between the silicon substrate 40a forming the light extraction window 41 and the refrigerant gas 60 in the above-described light extraction window forming step. As a result, the cooling efficiency of the silicon substrate 40a is reduced, and the resist mask layer 42 is burned by the reaction heat during dry etching, the etching selectivity is reduced, and the in-plane variation of the etching rate is increased. Machining accuracy is reduced. Further, in the above-described light emitting device manufacturing method, the silicon substrate 40a is cracked due to the pressure difference between the pressure in the chamber CH and the pressure in the atmospheric layer 51 during the dry etching in the above-described light extraction window forming step. was there.

  The present invention has been made in view of the above-described reasons, and an object thereof is to provide a method for manufacturing a light emitting device capable of efficiently condensing a part of light emitted from a light emitting element onto a light detecting element. There is.

  The invention according to claim 1 includes a light emitting element and a package formed of a mounting substrate in which at least a storage recess for storing the light emitting element is formed on one surface, and the mounting substrate is inward from a peripheral portion of the storage recess. And a light detection element that detects light emitted from the light emitting element. The mounting substrate includes a base substrate on which the light emitting element is mounted, and a first substrate. A light detection element forming substrate formed using a single silicon substrate, having a light extraction window formed opposite to the base substrate, and having a light receiving surface on one surface facing the base substrate And a light distribution substrate that is formed using a second silicon substrate and has an opening window that is interposed between the base substrate and the light detection element formation substrate and communicates with the light extraction window. In the detection element formation substrate A method of manufacturing a light-emitting device in which a portion that extends to the mouth window constitutes the protruding portion, and a first bonding for bonding a first silicon substrate on which a light detection element is formed and a light distribution substrate. A resist layer forming step for forming a resist layer covering a portion facing the opening window on at least one surface side of the first silicon substrate after the first bonding step, and a first after the resist layer forming step. Light extraction window for forming a light extraction window by dry-etching the first silicon substrate from the other surface side using a resist mask layer having an opening where a light extraction window is to be formed in a silicon substrate as a mask and using the resist layer as an etching stopper layer And a resist layer removing step of removing the resist layer after the light extraction window forming step.

  According to this invention, at least one surface side of the first silicon substrate faces the opening window after the first bonding step of bonding the first silicon substrate on which the light detection element is formed and the light distribution substrate. After performing a resist layer forming step for forming a resist layer covering the part, the first silicon substrate is used as a mask with the resist mask layer in which the part where the light extraction window is to be formed opened as a mask and the resist layer as an etching stopper layer. Since the light extraction window forming process for forming the light extraction window is performed by dry etching the substrate from the other surface side, and then the resist layer removing process for removing the resist layer is performed, the light extraction window forming process In this case, it is possible to prevent the inner surface of the opening window of the light distribution substrate from being damaged by etching, and to efficiently emit part of the light emitted from the light emitting element. It is possible to provide a light emitting device capable of the detecting element condensed.

  According to a second aspect of the present invention, in the first aspect of the present invention, the light distribution substrate is opposite to the first silicon substrate side between the first bonding step and the resist layer forming step. A polishing step for polishing the first silicon substrate from the other surface side to a desired thickness after applying a polishing tape for closing the opening window, and a peeling step for peeling the polishing tape after the polishing step. It is characterized by providing.

  According to this invention, before the resist layer forming step is performed after the first bonding step, the opening window is closed on the opposite side of the light distribution substrate from the first silicon substrate side. Since a polishing step for polishing the first silicon substrate from the other surface side to a desired thickness is performed after affixing the tape for polishing, and subsequently, a peeling step for peeling the polishing tape is performed. Since the first silicon substrate can be thinned while preventing the inner surface of the opening window of the light distribution substrate from being roughened, the etching time in the light extraction window forming step can be shortened, The processing accuracy in the light extraction window forming step can be improved and the throughput can be improved.

  According to a third aspect of the present invention, in the first or second aspect of the present invention, in the resist layer forming step, the resist layer is separated from an inner side surface of the opening window in the light distribution substrate and the first silicon substrate side. In the light extraction window forming step, the space surrounded by the substrate holding portion disposed in the chamber of the dry etching apparatus and the resist layer is filled with the refrigerant gas. It is characterized by performing dry etching.

  According to this invention, the cooling efficiency of the first silicon substrate and the resist mask layer by the refrigerant gas can be increased in the light extraction window forming step, and the in-plane uniformity of the etching rate in the light extraction window forming step can be increased. The reproducibility of the etching selectivity and the like can be improved, and the processing accuracy of the light extraction window can be improved.

  According to the first aspect of the present invention, there is an effect that it is possible to provide a light emitting device capable of efficiently condensing a part of light emitted from the light emitting element onto the light detecting element.

  Hereinafter, after describing the light-emitting device of this embodiment based on FIGS. 5 to 13, the manufacturing method will be described based on FIGS. 1 to 4.

  As shown in FIG. 5, the light-emitting device of this embodiment includes a light-emitting element 1 made of an LED chip and a storage recess 2a for storing the light-emitting element 1, formed on one surface, and a light-emitting element on the inner bottom surface of the storage recess 2a. 1 is mounted, a translucent member 3 fixed to the mounting substrate 2 so as to close the housing recess 2a on the one surface side of the mounting substrate 2, and a light emitting element provided on the mounting substrate 2 1 from a light detecting element 4 for detecting light emitted from 1 and a translucent material (for example, silicone resin, acrylic resin, epoxy resin, polycarbonate resin, glass, etc.) filled in the housing recess 2a of the mounting substrate 2 The light emitting element 1 and the sealing part 5 which sealed the bonding wire 14 (refer FIG. 6) connected to the said light emitting element 1 are provided. Here, the mounting substrate 2 has a hook-like protrusion 2c protruding inward from the peripheral portion of the housing recess 2a on the one surface side, and the light detection element 4 is provided on the protrusion 2c. ing. In the present embodiment, the package is constituted by the mounting substrate 2 and the translucent member 3, but the translucent member 3 is not necessarily provided, and may be appropriately provided as necessary.

  As shown in FIGS. 5 to 7, the mounting substrate 2 has a rectangular plate-like base substrate 20 on which the light emitting element 1 is mounted on one surface side, and a circular shape that is disposed to face the one surface side of the base substrate 20. A light detection element forming substrate 40 on which the light extraction window 41 is formed and the light detection element 4 is formed, and a rectangular shape that is interposed between the base substrate 20 and the light detection element formation substrate 40 and communicates with the light extraction window 41. And a space surrounded by the base substrate 20, the light distribution substrate 30, and the light detection element formation substrate 40 constitutes the housing recess 2a. is doing. Here, the outer peripheral shapes of the base substrate 20, the light distribution substrate 30, and the light detection element formation substrate 40 are rectangular, and the light distribution substrate 30 and the light detection element formation substrate 40 are formed to have the same outer dimensions as the base substrate 20. Has been. Further, the thickness dimension of the light detection element forming substrate 40 is set smaller than the thickness dimension of the base substrate 20 and the light distribution substrate 30. In the present embodiment, the portion of the light detection element forming substrate 40 that protrudes above the opening window 31 of the light distribution substrate 30 constitutes the protruding portion 2c described above.

  The base substrate 20, the light distribution substrate 30, and the light detection element formation substrate 40 described above are formed using silicon substrates 20a, 30a, and 40a each having an n-type conductivity and a (100) plane main surface. The opening window 31 of the light distribution substrate 30 is formed using anisotropic etching using an alkaline solution (for example, a TMAH solution, a KOH solution, etc.) on the silicon substrate 20a. A silicon oxide film 33b is stacked on the (111) plane formed by etching, and a mirror film 39 that reflects a part of the light emitted from the light emitting element 1 toward the light detecting element 4 is stacked on the silicon oxide film 33b. Has been. Here, the mirror film 39 includes a reflective film made of a material (for example, Al) having a high reflectance with respect to light emitted from the light emitting element 1 and a protective film made of a silicon oxide film stacked on the reflective film. It is configured. In this embodiment, the silicon substrate 40a serving as the basis of the light detection element forming substrate 40 constitutes the first silicon substrate, and the silicon substrate 30a serving as the basis of the light distribution substrate 30 constitutes the second silicon substrate. The silicon substrate 20a that is the basis of the base substrate 20 constitutes a third silicon substrate.

  As shown in FIGS. 8 and 9, the base substrate 20 includes two electrodes electrically connected to both electrodes of the light-emitting element 1 on one surface side (left surface side in FIG. 8C) of the silicon substrate 20 a. Conductor patterns 25 a and 25 a are formed, and two conductor patterns 25 b electrically connected to the light detection element 4 through two through-hole wirings 34 and 34 described later formed on the light distribution substrate 30. 25b, and the four external connection electrodes 27a, 27a, 27b formed on the other surface side (the right side in FIG. 8C) of each conductor pattern 25a, 25a, 25b, 25b and the silicon substrate 20a. 27b are electrically connected to each other through the through-hole wiring 24. The base substrate 20 is also formed with a bonding metal layer 29 for bonding to the light distribution substrate 30 on the one surface side of the silicon substrate 20a.

  The light-emitting element 1 in this embodiment is a visible light LED chip in which a conductive substrate is used as a crystal growth substrate and electrodes (not shown) are formed on both surfaces in the thickness direction. Therefore, the base substrate 20 has one of the two conductor patterns 25a and 25a to which the light emitting element 1 is electrically connected, a rectangular die pad portion 25aa to which the light emitting element 1 is die-bonded, and The lead-out wiring part 25ab is formed integrally with the die pad part 25aa and is a connection part with the through-hole wiring 24. In short, the light emitting element 1 is die-bonded to the die pad portion 25aa of the one conductor pattern 25a, the electrode on the die pad portion 25aa side is joined and electrically connected to the die pad portion 25aa, and the electrode on the light extraction surface side. Is electrically connected to the other conductor pattern 25 a via the bonding wire 14.

  The base substrate 20 has a rectangular heat radiation pad portion 28 made of a metal material having a higher thermal conductivity than the silicon substrate 20a on the other surface side of the silicon substrate 20a. The pad portion 28 is thermally coupled to a plurality of (in this embodiment, nine) cylindrical thermal vias 26 made of a metal material (for example, Cu) having a higher thermal conductivity than the silicon substrate 20a. The heat generated in the light emitting element 1 is dissipated through the thermal vias 26 and the heat dissipating pads 28.

  By the way, the base substrate 20 is formed on the silicon substrate 20a with four through-holes 22a in which the above-described four through-hole wirings 24 are formed inside and nine above-mentioned nine thermal vias 26 in the inside. A through hole 22b is provided in the thickness direction, and an insulating film 23 made of a thermal oxide film (silicon oxide film) is formed across the one surface and the other surface of the silicon substrate 20a and the inner surfaces of the through holes 22a and 22b. The conductive patterns 25a, 25a, 25b, 25b, the bonding metal layer 29, the external connection electrodes 27a, 27a, 27b, 27b, the heat radiation pad 28, the through-hole wirings 24, and the thermal vias are formed. 26 is electrically insulated from the silicon substrate 20a.

  Here, each conductor pattern 25a, 25a, 25b, 25b, bonding metal layer 29, each external connection electrode 27a, 27a, 27b, 27b, and heat radiation pad portion 28 are formed on the insulating film 23. And the Au film formed on the Ti film, the conductor patterns 25a, 25a, 25b, 25b on the one surface side of the silicon substrate 20a and the bonding metal layer 29 are simultaneously formed. The external connection electrodes 27a, 27a, 27b, 27b on the other surface side of the silicon substrate 20a and the heat dissipation pad portion 28 are formed at the same time. In this embodiment, the thickness of the Ti film on the insulating film 23 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are only examples and are particularly limited. Not what you want. Further, the material of each Au film is not limited to pure gold, and may be one added with impurities. In addition, although a Ti film is interposed as an adhesion layer for improving adhesion between each Au film and the insulating film 23, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr, TiN, TaN or the like may be used. Further, although Cu is adopted as the material of the through-hole wiring 24 and the thermal via 26, it is not limited to Cu, and for example, Ni, Al, etc. may be adopted.

  As shown in FIGS. 10 and 11, the light distribution substrate 30 is formed on one surface side of the silicon substrate 30a (on the left side in FIG. 10C) via conductor patterns 35, 35 via through-hole wirings 34, 34. Conductive patterns 37 and 37 electrically connected to each other are formed, and a bonding metal layer 38 for bonding to the light detection element forming substrate 40 is formed, and the other surface side of the silicon substrate 30a (FIG. 10). On the right side in (c), two conductor patterns 35 and 35 that are joined to and electrically connected to the two conductor patterns 27b and 27b of the base substrate 20 are formed, and the joining metal of the base substrate 20 is formed. A bonding metal layer 36 to be bonded to the layer 29 is formed.

  Further, the light distribution substrate 30 has two through-holes 32 in which the above-described two through-hole wirings 34 are respectively formed in the thickness direction of the silicon substrate 30a. An insulating film 33 made of a thermal oxide film (silicon oxide film) is formed across the other surface and the inner surface of each through hole 32, and each conductor pattern 35, 35, 37, 37 and each bonding metal layer 36, 38 is electrically insulated from the silicon substrate 30a. Here, each of the conductor patterns 35, 35, 37, 37 and each of the bonding metal layers 36, 38 is a laminated film of a Ti film formed on the insulating film 33 and an Au film formed on the Ti film. The conductor patterns 35 and 25 on the one surface side of the silicon substrate 30a and the bonding metal layer 36 are formed at the same time, and the conductor patterns 37 and 37 on the other surface side of the silicon substrate 30a and the bonding metal layer 38 are formed. Are formed at the same time. In this embodiment, the thickness of the Ti film on the insulating film 33 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are only examples and are particularly limited. Not what you want. Here, the material of each Au film is not limited to pure gold, and may be added with impurities. Further, although a Ti film is interposed as an adhesion improving layer for adhesion between each Au film and the insulating film 33, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr, TiN, TaN or the like may be used. Further, although Cu is adopted as the material of the through-hole wiring 34, it is not limited to Cu, and for example, Ni, Al or the like may be adopted.

  As shown in FIGS. 12 and 13, the light detection element forming substrate 40 has two conductor patterns 37 and 37 of the light distribution substrate 30 on one surface side (right side in FIG. 12C) of the silicon substrate 40 a. The two conductive patterns 47a and 47b that are joined together and electrically connected are formed, and the joining metal layer 48 joined to the joining metal layer 38 of the light distribution substrate 30 is formed. Here, the photodetecting element 4 is constituted by a photodiode, and one of the two conductor patterns 47a and 47b formed on the photodetecting element forming substrate 40 (the upper conductor pattern 47a in FIG. 13). Is electrically connected to the p-type region 4a of the photodiode constituting the photodetecting element 4, and the other conductor pattern 47b (lower conductor pattern 47b in FIG. 13) is connected to the n-type region 4b of the photodiode. It is electrically connected to the silicon substrate 40a that constitutes it.

  Further, the photodetecting element forming substrate 40 has an insulating film 43 made of a silicon oxide film formed on the one surface side where the p-type region 4a whose surface is a light receiving surface is formed in the silicon substrate 40a. 43 also serves as an antireflection film for the photodiode. Further, in the light detection element forming substrate 40, the one conductor pattern 47a is electrically connected to the p-type region 4a through the contact hole 43a formed in the insulating film 43, and the other conductor pattern 47b is connected to the insulating film 43. The n-type region 4b is electrically connected through the formed contact hole 43b. Here, each of the conductor patterns 47a and 47b and the bonding metal layer 48 is composed of a laminated film of a Ti film formed on the insulating film 43 and an Au film formed on the Ti film, and is formed at the same time. It is. In this embodiment, the thickness of the Ti film on the insulating film 43 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are only examples and are particularly limited. Not what you want. Here, the material of each Au film is not limited to pure gold, and may be added with impurities. Further, although a Ti film is interposed as an adhesion improving layer for adhesion between each Au film and the insulating film 43, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr, TiN, TaN or the like may be used.

  Further, the above-described translucent member 3 is formed using a translucent substrate made of a translucent material (for example, silicone resin, acrylic resin, epoxy resin, polycarbonate resin, glass, or the like). Here, the translucent member 3 is formed in a rectangular plate shape having the same outer peripheral shape as the mounting substrate 2, and all of the light emitted from the light emitting element 1 is formed on the light extraction surface opposite to the mounting substrate 2 side. A fine concavo-convex structure that suppresses reflection is formed. Here, the fine concavo-convex structure formed on the light extraction surface of the translucent member 3 is formed such that many fine concave portions have a two-dimensional periodic structure. The fine concavo-convex structure described above may be formed using, for example, a laser processing technique, an etching technique, an imprint lithography technique, or the like. Further, the period of the fine concavo-convex structure may be appropriately set within a range of about ¼ to 100 times the emission peak wavelength of the light emitting element 1.

  Next, a method for forming the light distribution substrate 30 will be described with reference to FIGS.

  First, masks for forming silicon oxide films 41a and 41b by thermal oxidation on the one surface side (upper surface side in FIG. 4A) and the other surface side (lower surface side in FIG. 4A) of the silicon substrate 30a. By performing the oxide film forming step, the structure shown in FIG. 4A is obtained.

  Thereafter, in order to form a mask for forming the above-described through-hole 32 in the silicon substrate 30a, the silicon oxide film 41b on the other surface side of the silicon substrate 30a is patterned using photolithography technology and etching technology, Using the patterned silicon oxide film 41b as a mask, the silicon substrate 30a reaches the silicon oxide film 41a on the one surface side from the other surface side (that is, the silicon oxide film 41b on the other surface side of the silicon substrate 30a is masked). The silicon oxide film 41a on the one surface side is used as an etching stopper layer to penetrate through the silicon substrate 30a), and a through hole forming process for forming a through hole 32 is performed, followed by silicon oxide films 41a and 41b. Is removed by etching, and then the silicon substrate 30a is FIG. 4B shows an insulating film forming step of forming an insulating film 23 made of a silicon oxide film on the surface side, the other surface side, and the inner surface (inner peripheral surface) of the through hole 32 by a thermal oxidation method. Get the structure. Here, as an etching apparatus in the through-hole forming step, for example, an inductively coupled plasma (ICP) type dry etching apparatus is used, and the thickness of the silicon substrate 30a is set to about 200 μm to 500 μm by appropriately setting the etching conditions. However, the aspect ratio of the through hole 32 can be set to a high aspect ratio of 20 to 50.

  Thereafter, a photolithography technique and an etching technique are used to form a mask for forming a recess 31a whose inner surface is a mirror surface having a (111) plane at a portion corresponding to the opening window 31 on the one surface of the silicon substrate 30a. Then, the insulating film 33 on the one surface side of the silicon substrate 30a is patterned, and the recess 31a is etched by etching the silicon substrate 30a from the one surface side to a predetermined depth using the patterned insulating film 33 as a mask. The structure shown in FIG.4 (c) is obtained by performing the recess formation process to form. Here, in the recess forming step, the recess 31a is formed by anisotropic etching using an alkaline solution (for example, KOH aqueous solution, TMAH aqueous solution, etc.).

  After the above-described recess forming step, an oxide film forming step for forming a silicon oxide film 33b on the inner surface and the inner bottom surface of the recess 30a of the silicon substrate 30a is performed to obtain the structure shown in FIG. In the present embodiment, the through-hole 32 for through-hole wiring is formed in the silicon substrate 30a by the above-described through-hole forming step, insulating film forming step, recess forming step, and oxide film forming step. A recess 31a whose inner surface becomes a mirror surface is formed by forming an insulating film 33 as a silicon oxide film on the inner surface of the through-hole 32 and anisotropically etching a portion corresponding to the opening window 31 from one surface side with an alkaline solution. After the step is formed, a pre-stage process for forming the silicon oxide film 33b on the inner side surface and the inner bottom surface of the recess 31a is configured. In the previous step, the through hole wiring formation process, the insulating film formation process, the recess formation process, and the oxide film formation process are performed in this order, but the recess formation process, the oxide film formation process, the through hole formation process, and the insulation are performed. You may make it perform in order of a film formation process.

  Through-hole wiring formation in which a through-hole wiring 34 made of a metal material (for example, Cu, Ni, Al, etc.) is formed inside the through-hole 32 of the silicon substrate 30a using the electroplating method after the above-mentioned pre-stage process. By performing the steps, the structure shown in FIG. When the through-hole wiring 34 is formed by using electroplating, the metal portion that forms the basis of the through-hole wiring 34 is bottom-up grown after the other surface side of the silicon substrate 30a is closed with a metal thin film or the like. After that, the unnecessary portion of the metal portion is removed by CMP or the like to form the through hole wiring 34.

  After the above-described through-hole wiring forming process, a mirror film forming process for forming a mirror film 39 on the silicon oxide film 33b on the inner surface of the recess 30a of the silicon substrate 30a is performed, as shown in FIG. Get the structure. In the mirror film forming step, an Al film serving as the base of the reflective film is formed on the one surface side of the silicon substrate 30a by sputtering or the like, and subsequently, a silicon oxide film serving as the base of the protective film is formed by CVD. After forming the film by the method or the like, the mirror film 39 is formed by patterning the laminated film of the Al film and the silicon oxide film.

  After the above-described mirror film forming step, by performing the back side metal layer forming step of forming the conductor patterns 35 and 35 and the bonding metal layer 36 on the other surface side (back side) of the silicon substrate 30a, FIG. The structure shown in g) is obtained. In the backside metal layer forming step, a laminated film of a Ti film and an Au film is formed on the other surface side of the silicon substrate 30a by a sputtering method or the like, and then the laminated film is used by a photolithography technique and an etching technique. Thus, the conductive patterns 35 and 35 and the bonding metal layer 36 (see FIG. 10C) are formed by patterning.

  After the above-described back side metal layer forming step, the front side metal layer forming step of forming the metal layers 37a serving as the basis of the conductive patterns 37 and 37 and the bonding metal layer 38 on the entire surface of the one surface side of the silicon substrate 30a is performed. By doing so, the structure shown in FIG. Here, in the surface side metal layer forming step, a metal layer 37a made of a laminated film of a Ti film and an Au film is formed on the entire surface of the silicon substrate 30a on the one surface side by a sputtering method or the like.

  After the surface side metal layer forming step, a resist mask 135 is formed on the other surface side of the silicon substrate 30a except for the portion corresponding to the opening window 31, and the conductor pattern 37, on the one surface side of the silicon substrate 30a. The structure shown in FIG. 4I is obtained by performing a resist mask forming step for forming a resist mask 136 that covers portions corresponding to the portions 37 and the bonding metal layer 38. Note that in the resist mask formation step, the resist mask 135 and the resist mask 136 may be formed in either order.

  After the resist mask forming step, the silicon substrate 30a is formed from the other surface side of the laminated film of the silicon oxide film 33b formed on the inner bottom surface of the recess 31a and the metal layer 37a as an etching stopper layer. The structure shown in FIG. 4J is obtained by performing a back side etching process in which dry etching is performed to a depth that reaches the depth of. Here, in the back side etching process, vertical processing is performed using an ICP type dry etching apparatus, but the dry etching apparatus is not particularly limited.

  After the above-described back side etching step, the silicon oxide film at the portion facing the opening window 31 is removed by etching, and then the metal layer 37a is patterned by wet etching, whereby the conductor patterns 37 and 37 and the bonding metal layer 38 are formed. The structure shown in FIG. 4K is obtained by performing a wet etching process for forming the opening window 31 as well as forming. Here, the Ti film of the metal layer 37a is wet etched with hydrogen peroxide, and the Au film is wet etched with iodine.

  After the above-described wet etching process, a mask removal process for removing the resist masks 135 and 156 with an organic solvent (for example, acetone) is performed to obtain the light distribution substrate 30 having the structure shown in FIG. In forming the light distribution substrate 30, all the above steps are performed at the wafer level.

  According to the method of forming the light distribution substrate 30 described above, the through hole 32 for the through hole wiring 34 is formed in the silicon substrate 30a, and then the insulating film 33 made of a silicon oxide film is formed on the inner surface of the through hole 32. A portion corresponding to the opening window 31 is anisotropically etched from the one surface side with an alkaline solution to form a recess 31a having a mirror surface on the inner surface, and then silicon oxide is formed on the inner surface and the inner bottom surface of the recess 31a. By performing the pre-stage process for forming the film 33b, the recess 31a whose inner surface is formed by a mirror surface with a small surface roughness can be formed. In the pre-stage process, the recess 31a is formed in the thickness direction of the silicon substrate 30a. Since the recess 31a is formed without forming the through-opening window 31, the through-hole wiring 34 can be formed by using an electroplating method in the through-hole wiring forming process. Here, the depth dimension of the recess 31a formed in the above-described recess forming step is such that the thickness dimension of the diaphragm portion between the other surface of the silicon substrate 30a and the inner bottom surface of the recess 31a is mounted on the base substrate 20. It may be set so as to be smaller than the thickness dimension of the light emitting element 1, but if the thickness dimension of the diaphragm portion becomes too thin, the diaphragm portion is likely to be damaged in the step after the recess forming step, It can be considered that the yield is significantly reduced or the manufacturing apparatus is contaminated or broken due to broken pieces. In particular, when performing CMP in the above-described through-hole wiring forming process, it is desirable that the thickness of the diaphragm portion is 10 μm or more. Therefore, the depth of the recess 31a is set so that the thickness of the diaphragm portion is 10 μm or more. It is desirable to set the size.

  Further, according to the method for forming the light distribution substrate 30 described above, since the silicon oxide film 33b is formed on the inner side surface and the inner bottom surface of the recess 31 before the through hole wiring forming step, the through hole wiring is formed. In the process, it is possible to prevent the plating precipitation portion (metal part) from being formed on the inner side surface of the recess 31a and to increase the surface roughness of the inner side surface of the recess 31a. In addition, the through-hole wiring forming step in the mirror film forming step Since the mirror film 39 is formed on the silicon oxide film 33b on the inner side surface of the recess 31a after that, the surface roughness of the mirror film 39 can be reduced, and the conductor patterns 37, 37 after the mirror film forming step. Since the conductor patterns 35 and 35 and the bonding metal layers 38 and 36 are formed, it is possible to prevent the surfaces of the conductor patterns 37 and 37, the conductor patterns 35 and 35, and the bonding metal layers 38 and 36 from being roughened. Kill. Further, according to the method for forming the light distribution substrate 30 described above, the metal layer 37a is formed on the entire surface of the one surface side of the silicon substrate 30a, and the silicon oxide formed on the inner bottom surface of the recess 31a. Using the laminated film of the film 33b and the metal layer 37a as an etching stopper layer, the silicon substrate 30a is dry-etched from the other surface side to the depth reaching the laminated film, and then the silicon oxide film 33b at a portion facing the opening window 31 is formed. After the etching is removed, the metal layer 37a is patterned by wet etching to form the conductor patterns 37 and 37 and the bonding metal layer 38 and the opening window 31. Therefore, the silicon substrate 30a is etched from the other surface side. Prevents the surface of the mirror film 39 from becoming rougher than when dry etching is performed without a stopper layer. In addition, it is possible to prevent the chamber and wafer holder of the dry etching apparatus from being adversely affected, and when the silicon substrate 30a is dry etched from the other surface side, the silicon oxide film 33b can be used as an etching stopper layer. Compared to the case of using a layer film, the etching stopper layer can be prevented from being damaged by a pressure difference between both sides in the thickness direction of the etching stopper layer. When only the metal layer 37a is used as the etching stopper layer, the metal layer 37a serving as the etching stopper layer is ductile and will not be damaged. However, since the surface of the metal layer 37a is sputtered, the sputtered metal May adhere to the inner wall of the chamber of the dry etching apparatus or reattach to the other surface side of the silicon substrate 30a, which may cause a problem of adverse effects. In this embodiment, the silicon oxide film 33b and the metal layer Since the laminated film with 37a is used as an etching stopper layer and dry etching is performed from the other surface side of the silicon substrate 30a, such a problem does not occur.

  Next, a method of forming the base substrate 20 will be described, but the steps other than the opening window 31 of the light distribution substrate 30 are the same as the method of forming the light distribution substrate 30 and will be described briefly.

  First, a thermal oxidation step of forming a silicon oxide film on one surface side (upper surface side in FIG. 8B) and the other surface side (lower surface side in FIG. 8B) of the silicon substrate 20a by a thermal oxidation method is performed. Thereafter, in order to form a mask for forming the above-described through holes 22a and 22b in the silicon substrate 20a, the silicon oxide film 42a on the one surface side of the silicon substrate 20a is formed by using a photolithography technique and an etching technique. Through-hole formation in which through-holes 22a and 22b are formed by patterning and dry-etching the silicon substrate 20a from the one surface side to the silicon oxide film on the other surface side using the patterned silicon oxide film as a mask Perform the process.

  Subsequently, after the silicon oxide film is removed by etching, an insulating film 23 made of a silicon oxide film is formed by thermal oxidation on the one surface side and the other surface side of the silicon substrate 20a and the inner surfaces of the through holes 22a and 22b. An insulating film forming step is performed to form a conductor portion that closes the through holes 22a and 22b on the other surface side of the silicon substrate 20a, and then an anode (not shown) disposed opposite to the one surface side of the silicon substrate 20a. ) And the cathode (conductor portion) blocking the through-holes 22a and 22b on the other surface side of the silicon substrate 20a, and the metal portion that becomes the through-hole wiring 24 and the thermal via 26 is a conductor. An electroplating step is performed for depositing along the thickness direction of the silicon substrate 20a from the exposed surface on the through-hole 22a, 22b side in the portion, and thereafter, the After performing a polishing step for removing unnecessary portions formed on the one surface side of the con substrate 20a and the conductor portion on the other surface side of the silicon substrate 20a by CMP or the like, each of the other portions on the other surface side of the silicon substrate 20a is performed. An electrode forming step for forming the external connection electrodes 25a and 25b and the heat radiation pad portion 28 is performed, and subsequently, bonding for forming the respective conductor patterns 25a and 25b and the bonding metal layer 29 on the one surface side of the silicon substrate 20a. The base substrate 20 is obtained by performing the metal layer forming step. In forming the base substrate 20, all the above steps are performed at the wafer level.

  In addition, the photodetecting element forming substrate 40 is formed after the photodetecting element 4 is formed on the one surface side of the silicon substrate 40a by using an ion implantation technique or a diffusion technique before being bonded to the light distribution substrate 30. Then, an insulating film 43 is formed on the one surface side of the silicon substrate 40a, and then contact holes 43a and 43b are formed using a photolithography technique and an etching technique, and then the conductor patterns 47a and 47b and the bonding metal layer are formed. 48 is formed by using a thin film forming technique such as a sputtering method, a photolithography technique, and an etching technique, and the light extraction window 41 is formed after joining to the light distribution substrate 30.

  Hereinafter, the manufacturing method of the light-emitting device of this embodiment is demonstrated based on FIGS.

  First, by performing a first bonding step of bonding the silicon substrate 40a on which the light detecting element 4, the insulating film 43, the conductor patterns 47a and 47b, and the bonding metal layer 48 are formed, and the light distribution substrate 30. The structure shown in FIG. 1B is obtained. Here, in the first bonding step, the bonding surfaces are cleaned and activated by irradiating each bonding surface with an argon plasma, an ion beam, or an atomic beam in vacuum before bonding. A room temperature bonding method is used in which they are brought into contact with each other and directly bonded at room temperature. In the first bonding step, the bonding metal layer 48 of the silicon substrate 40a and the bonding metal layer 38 of the light distribution substrate 30 are bonded, and the conductor patterns 47a and 47b of the silicon substrate 40a and the light distribution substrate. Thirty conductor patterns 37 and 37 are joined and electrically connected. Here, if the pattern design is made so that the joint portions of the conductor patterns 47a and 47b and the conductor patterns 37 and 37 are shifted from the region overlapping the through-hole wiring 34, the conductor patterns 47a and 47b and the conductor patterns 37 and 37 The flatness of the joint surfaces can be increased, and in particular, the bonding yield when bonding by the room temperature bonding method can be increased and the bonding reliability can be increased. Note that the first bonding step is not limited to the room temperature bonding method, and a bonding method using a low melting point eutectic material such as AuSn or solder may be employed. In the first bonding step, after normalizing and activating each of the bonding surfaces described above, the bonding surfaces are brought into contact with each other and directly bonded at a specified temperature higher than room temperature (for example, 80 ° C.). Good.

  After the first bonding step described above, a polishing tape 50 for closing the opening window 31 is applied to the light distribution substrate 30 opposite to the silicon substrate 40a side, and then the silicon substrate 40a is desired from the other surface side. The structure shown in FIG. 1B is obtained by performing a polishing process for polishing to a thickness of (for example, about 100 μm).

  After the above-described polishing process, a peeling process for peeling the polishing tape 50 is performed to obtain the structure shown in FIG.

  Thereafter, a resist layer 52 covering the portion facing the opening window 31 on the one surface side of the silicon substrate 40a, the inner side surface of the opening window 31 in the light distribution substrate 30, and the surface opposite to the first silicon substrate 40 side is formed. The structure shown in FIG. 1D is obtained by performing the resist layer forming step to be formed. Here, the resist layer 52 is formed by using a spray method and a spin coat method to increase the film thickness. The resist layer 52 may be formed so as to cover at least the portion facing the opening window 31 on the one surface side of the silicon substrate 40a.

  After the above-described resist layer forming step, a structure shown in FIG. 1E is obtained by forming a resist mask layer having an opening where a light extraction window is to be formed in the first silicon substrate.

  Thereafter, by performing a light extraction window forming step of forming the light extraction window 41 by dry etching the silicon substrate 40a from the other surface side using the resist mask layer 42 as a mask and the resist layer 52 as an etching stopper layer, FIG. The structure shown in (f) is obtained. Here, in the light extraction window forming step, as shown in FIG. 2, a refrigerant gas (for example, He gas or the like) is formed in a space surrounded by the substrate holding unit 60 and the resist layer 52 disposed in the chamber CH of the dry etching apparatus. ) Dry etching is performed in a state where 70 is satisfied. Here, all processes are performed at the wafer level until a third bonding process to be described later is completed. In the light extraction window forming process, as shown in FIG. 3, a large number of light distribution substrates 30 are formed. The wafers 300 and the wafers 400 that serve as the foundations of the multiple light detection element forming substrates 40 are bonded to each other and the resist layers 52 are stuck to the respective light distribution substrates 30 by the substrate holder 60 in the chamber CH. A large number of light extraction windows 41 are collectively formed by performing dry etching in a state where the refrigerant gas 70 is filled in a space surrounded by the substrate holding unit 60, the wafer 300, and the wafer 400. In the light extraction window forming step, the light extraction window 41 is formed on the silicon substrate 40a using an ICP type dry etching apparatus or the like, but the type of the dry etching apparatus is not particularly limited.

  By completing the light extraction element forming substrate 40 by performing a resist layer removing step of removing the resist mask layer 42 and the resist layer 52 with an organic solvent (for example, acetone) after the light extraction window forming step described above, The structure shown in FIG. 1 (g) is obtained.

  After the resist layer removing step described above, the second bonding for bonding the base substrate on which the light emitting element 1 is mounted (the base substrate 20 on which the light emitting element 1 is mounted and the bonding wires 14 are connected) and the light distribution substrate 30 are bonded. By performing the process, the structure shown in FIG. Here, in the second bonding step, the bonding surfaces are cleaned and activated by irradiating each bonding surface with an argon plasma, an ion beam, or an atomic beam in vacuum before bonding. A room temperature bonding method is used in which they are brought into contact with each other and directly bonded at room temperature. The joining metal layer 29 of the base substrate 20 and the joining metal layer 36 of the intermediate layer substrate 30 are joined, and the conductor patterns 25b and 25b of the base substrate 20 and the conductor patterns 35 and 35 of the intermediate layer substrate 30 are joined. Joined and electrically connected. Here, if the pattern design is made so that the joint portions of the conductor patterns 25b, 25b and the conductor patterns 35, 35 are shifted from the region overlapping the through-hole wiring 24 and the region overlapping the through-hole wiring 34, the conductor pattern 25b, The flatness of the joint surfaces of the 25b and the conductor patterns 35 and 35 can be increased, and in particular, the joining yield when joining by the room temperature joining method can be enhanced and the joining reliability can be enhanced. Note that the second bonding step is not limited to the room temperature bonding method, and a bonding method using a low melting point eutectic material such as AuSn or solder may be employed. In the second bonding step, after normalizing and activating each of the bonding surfaces described above, the bonding surfaces are brought into contact with each other and directly bonded at a specified temperature higher than room temperature (for example, 80 ° C.). Good.

  After the second bonding step described above, the housing recess 2a of the mounting substrate 2 is filled with a translucent material for sealing (for example, silicone resin, acrylic resin, epoxy resin, polycarbonate resin, glass, etc.) and sealed. What is necessary is just to perform the 3rd joining process of joining the mounting substrate 2 and the translucent member 3 after performing the sealing part formation process which forms the stop part 5, and a sealing part formation process.

  Then, the steps up to the third bonding step described above are performed at the wafer level to form the wafer level package structure, and then divided into individual light emitting devices by the dicing step. Therefore, the base substrate 20, the light distribution substrate 30, the light detection element formation substrate 40, and the translucent member 3 have the same outer size, so that a small package can be realized and manufacturing is facilitated. Further, the relative positional accuracy between the mirror film 39 on the light distribution substrate 30 and the light detection element 4 on the light detection element formation substrate 40 can be increased, and the light emitted from the light emitting element 1 to the side is mirror film. The light is reflected by 39 and guided to the light detection element 4.

  According to the manufacturing method of the light emitting device of the present embodiment described above, at least the silicon substrate 40a is formed after the first bonding step of bonding the silicon substrate 40a on which the light detection element 4 is formed and the light distribution substrate 30. After performing the resist layer forming step of forming the resist layer 52 that covers the portion facing the opening window 31 on the one surface side, the resist mask layer 42 in which the portion where the light extraction window 41 is to be formed in the silicon substrate 40a is opened is used as a mask. Using the resist layer 52 as an etching stopper layer, a light extraction window forming step of forming the light extraction window 41 by performing dry etching of the silicon substrate 40a from the other surface side is performed, followed by a resist layer removing step of removing the resist layer 52 In the light extraction window forming step, the inner surface of the opening window 31 of the light distribution substrate 30 is etched. Can be prevented from being damaged, it is possible to provide a light emitting device capable of condensing a portion of the emitted light to efficiently photodetector 4 from the light-emitting element 1.

  Further, according to the above-described method for manufacturing a light emitting device, the opening window 31 is closed on the side opposite to the silicon substrate 40a side of the light distribution substrate 30 before performing the resist layer forming step after the first bonding step. In the polishing step, a polishing step for polishing the silicon substrate 40a from the other surface side to a desired thickness is performed after affixing the polishing tape 50 to be performed, and then a peeling step for peeling the polishing tape 50 is performed. Since the silicon substrate 40a can be made thin while preventing the inner surface of the opening window 31 of the light distribution substrate 30 from being roughened, the etching time in the light extraction window forming step can be shortened, and the light extraction window formation can be performed. The process accuracy can be improved and the throughput can be improved.

  Further, according to the method for manufacturing a light emitting device described above, in the resist layer forming step described above, the resist layer 52 is also applied to the inner surface of the opening window 31 in the light distribution substrate 30 and the surface opposite to the silicon substrate 40a side. In the light extraction window forming step, dry etching is performed in a state where the space surrounded by the substrate holding unit 60 and the resist layer 52 disposed in the chamber CH of the dry etching apparatus is filled with the refrigerant gas 70. Therefore, the cooling efficiency of the silicon substrate 40a and the resist mask layer 42 by the refrigerant gas 70 can be increased in the light extraction window forming step, and the in-plane uniformity and etching selectivity of the etching rate in the light extraction window forming step can be increased. The reproducibility of the light extraction window 41 can be improved.

  In the light emitting device manufacturing method of the present embodiment described above, a silicon wafer capable of forming a large number of the base substrate 20, the light distribution substrate 30, and the light detection element forming substrate 40 as the silicon substrates 20a, 30a, 40a described above. And using a wafer-like material (translucent wafer) on which a large number of translucent members 3 can be formed as the above-mentioned translucent substrate, the process up to the completion of the above-described third bonding step is performed on the wafer. Since the wafer level package structure is formed by the leveling and then divided into individual light emitting devices by the dicing process, the base substrate 20, the light distribution substrate 30, the light detection element formation substrate 40, and the light transmitting property The member 3 has the same outer size, so that a small package can be realized and the manufacturing is facilitated. Further, the relative positional accuracy between the mirror film 39 on the light distribution substrate 30 and the light detection element 4 on the light detection element formation substrate 40 can be increased, and the light emitted from the light emitting element 1 to the side is mirror film. The light is reflected by 39 and guided to the light detection element 4.

  Moreover, according to the manufacturing method of the light-emitting device described above, in the second bonding step of bonding the light distribution substrate 30 and the base substrate 20 on which the light-emitting element 1 is mounted, activation of the bonding surfaces of each other is performed before bonding. Since the bonding surfaces are brought into contact with each other after bonding, the junction temperature of the light emitting element 1 can be prevented from exceeding the maximum junction temperature in the second bonding step, and the characteristics of the light emitting element 1 are deteriorated. Can be prevented.

  By the way, in the above-mentioned embodiment, although the visible light LED chip is used as the light emitting element 1, the light emitting element 1 is laminated | stacked on not only a visible light LED chip but an ultraviolet light LED chip, LED chip, and the said LED chip. It may be composed of a phosphor layer formed of a phosphor that is excited by at least light emitted from the LED chip and emits light having a longer wavelength than the LED chip, or an organic EL element. In addition, as the light emitting element 1, for example, after a light emitting portion or the like is epitaxially grown on the main surface side of the crystal growth substrate, a conductive substrate (for example, a Si substrate) that supports the light emitting portion is fixed to the light emitting portion. You may use what removed the board | substrate for crystal growth. The base substrate 20 is not limited to the silicon substrate 20a, and may be formed using, for example, a metal plate. By forming the base substrate 20 using a metal plate, the heat generated in the light emitting element 1 can be radiated more efficiently. It becomes possible.

  The light detection element 4 is not limited to a photodiode, and may be, for example, a color sensor that combines a photodiode and a color filter, or a combination of a photodiode and a wavelength selection filter.

  Moreover, in the said embodiment, although the one light emitting element 1 is mounted in the inner bottom face of the storage recess 2a of the mounting board | substrate 2, the number of the light emitting elements 1 is not specifically limited, A several luminescent color is the same. The light emitting element 1 may be mounted on the inner bottom surface of the storage recess 2a.

It is main process sectional drawing for demonstrating the manufacturing method of the light-emitting device of embodiment. It is explanatory drawing of the manufacturing method of a light-emitting device same as the above. It is explanatory drawing of the manufacturing method of a light-emitting device same as the above. It is main process sectional drawing for demonstrating the formation method of the substrate for light distribution in the light-emitting device same as the above. It is a schematic sectional drawing of a light-emitting device same as the above. It is a general | schematic disassembled perspective view of a light-emitting device same as the above. The mounting board | substrate is shown, (a) is a schematic plan view, (b) is A-A 'schematic sectional drawing of (a), (c) is B-B' schematic sectional drawing of (a). The base board | substrate in the same as the above is shown, (a) is a schematic plan view, (b) is an A-A 'schematic sectional view of (a), and (c) is a B-B' schematic sectional view of (a). It is a schematic bottom view of the base substrate in the same as the above. The light distribution board | substrate in the same as the above is shown, (a) is a schematic plan view, (b) is a schematic cross-sectional view along AA 'in (a), and (c) is a schematic cross-sectional view along BB' in (a). . It is a schematic bottom view of the substrate for light distribution in the same as the above. The optical detection element formation board in the same as above is shown, (a) is a schematic plan view, (b) is an AA 'schematic sectional view of (a), (c) is a BB' schematic sectional view of (a). is there. It is a schematic bottom view of the optical detection element formation board | substrate in the same as the above. It is a schematic sectional drawing which shows a prior art example. It is explanatory drawing of the manufacturing method of a light-emitting device same as the above. It is explanatory drawing of the manufacturing method of a light-emitting device same as the above. It is explanatory drawing of the manufacturing method of a light-emitting device same as the above. It is explanatory drawing of the manufacturing method of a light-emitting device same as the above.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Light emitting element 2 Mounting board | substrate 2a Storage recess 2c Protrusion part 4 Photodetection element 20 Base substrate 30a Silicon substrate (2nd silicon substrate)
31 Opening window 40 Photodetecting element forming substrate 40a Silicon substrate (first silicon substrate)
41 Light Extraction Window 42 Resist Mask Layer 50 Polishing Tape 52 Resist Layer 60 Substrate Holding Unit 70 Refrigerant Gas

Claims (3)

  A light emitting element and a package formed of a mounting substrate having at least one housing recess for housing the light emitting element, the mounting substrate having a protrusion protruding inward from the periphery of the housing recess. In addition, a light detection element that detects light emitted from the light emitting element is provided in the projecting portion, and the mounting substrate includes a base substrate on which the light emitting element is mounted and a first silicon substrate. A light detection element-formed substrate on which a light extraction window having a light receiving surface formed on one surface side facing the base substrate is formed, and a second silicon substrate, which is formed and disposed opposite to the base substrate. And a light distribution substrate having an opening window interposed between the base substrate and the light detection element formation substrate and communicating with the light extraction window. Overhang A light emitting device manufacturing method in which the projecting portion constitutes the protruding portion, wherein a first bonding step of bonding the first silicon substrate on which the light detection element is formed and the light distribution substrate; A resist layer forming step for forming a resist layer covering a portion facing the opening window on at least one surface side of the first silicon substrate after the bonding step, and light on the first silicon substrate after the resist layer forming step A light extraction window forming step of forming a light extraction window by dry-etching the first silicon substrate from the other surface side using the resist mask layer having an opening to form a extraction window as a mask and the resist layer as an etching stopper layer; And a resist layer removing step of removing the resist layer after the light extraction window forming step.   Between the first bonding step and the resist layer forming step, a polishing tape for closing the opening window is attached to the light distribution substrate opposite to the first silicon substrate side, and then The light emitting device according to claim 1, further comprising: a polishing step of polishing the first silicon substrate from the other surface side to a desired thickness; and a peeling step of peeling the polishing tape after the polishing step. Production method.   In the resist layer forming step, the resist layer is also formed on the inner surface of the opening window in the light distribution substrate and the surface opposite to the first silicon substrate side, and in the light extraction window forming step, The dry etching is performed in a state where a refrigerant gas is filled in a space surrounded by the substrate holding portion and the resist layer disposed in a chamber of the dry etching apparatus. Manufacturing method of light-emitting device.

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