JP2009206187A - Light-emitting device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device and a method of manufacturing the same capable of highly increasing an output power of the light output of the light-emitting element and simplifying the manufacturing process. <P>SOLUTION: A packaging substrate 2 of the light-emitting device with a housing concave part 2a for housing the light-emitting element 1 formed on one surface includes: a base substrate 20 with the light-emitting element 1 packaged; a light-detection-element-formed substrate 40; and an intermediate layer substrate 30. The base substrate 20 includes conductive patterns 25a, 25b formed on one surface side of a first insulating structure 20a and electrodes 27a, 27b for external connection formed on the other surface side, and a through-hole wiring 24 and a heat radiation core (a heat radiation part) 26a provided through the first insulating structure 20a in the thickness direction. The intermediate layer substrate 30 includes an aperture window 31 communicating with a light-take-out window 41 formed in a thickness direction of a second insulating structure 30a, and a through-hole wiring 34 electrically connected to a light detection element 4 formed. Each of the insulating structures 20a, 30a includes a hardened material of a photosensitive resin composition. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a light emitting device using a light emitting element such as a light emitting diode chip (LED chip) and a method for manufacturing the same.

  Conventionally, as shown in FIG. 3, a light-emitting element 101 made of an LED chip and a storage recess 102a that is formed using three silicon substrates 120a, 130a, and 140a and stores the light-emitting element 101 are formed on one surface. A light-receiving element 4 formed of a photodiode for detecting light emitted from the light-emitting element 101 is provided on a protruding portion 102c that protrudes inward from the peripheral portion of the housing recess 102a in the mounting substrate 102. A formed light emitting device has been proposed (see Patent Document 1).

  Here, the mounting substrate 102 described above is formed using the silicon substrate 120a and the base substrate 120 on which the light emitting element 101 is mounted on one surface side, and the one surface side of the base substrate 120 formed using the silicon substrate 140a. Between the base substrate 120 and the photodetecting element forming substrate 140 formed using the silicon substrate 130a, the photodetecting element forming substrate 140 on which the photoextracting window 141 and the photodetecting element 104 are formed. An intermediate window substrate 130 is formed which has an opening window 131 interposed therebetween and communicated with the light extraction window 141, and an inner surface of the opening window 131 serving as a mirror surface 102 d for reflecting a part of the light emitted from the light emitting element 101. Through-hole wiring 124 electrically connected to the photodetecting element 104 to the base substrate 120 and the intermediate layer substrate 130, respectively. With 134 is formed, the light emitting element 101 electrically connected to the through-hole wiring base board 120 (not shown) is formed. In the above light emitting device, the light emitting element 101 is thermally coupled to the light emitting element 101 so that the junction temperature of the light emitting element 101 does not exceed the maximum junction temperature due to heat generation of the light emitting element 101 while increasing the light output. A plurality of thermal vias 126 are provided through the base substrate 120.

  In addition, the intermediate layer substrate 130 is formed with a conductor pattern 137 electrically connected to the through-hole wiring 134 on one surface side that is the light detection element formation substrate 140 side, and on the other surface side that is the base substrate 120 side. A conductor pattern 135 electrically connected to the through-hole wiring 134 is formed on the substrate, and the conductor pattern 137 is joined to the conductor pattern 147 electrically connected to the light detection element 104 on the light detection element formation substrate 140. The conductor pattern 135 is electrically connected and joined to the conductor pattern 125 b electrically connected to the through-hole wiring 124 in the base substrate 120. Further, the intermediate layer substrate 130 and the light detection element formation substrate 140 are bonded to each other by bonding metal layers (not shown), and the intermediate layer substrate 130 and the base substrate 120 are bonded to each other from bonding metal layers 136 and 129. Yes.

  In the light emitting device having the configuration shown in FIG. 3 described above, the storage recess 102a in which the light emitting element 101 is stored protrudes inward from the peripheral portion of the storage recess 102a in the mounting substrate 102 formed on the one surface. Since the light detection element 104 for detecting the light emitted from the light emitting element 101 is formed on the protrusion 102c, the light detection element 104 is disposed around the housing recess 102a on the one surface side of the mounting substrate 102. Therefore, there is an advantage that it is not necessary to separately secure a space for this purpose, and it is possible to reduce the size while providing the light detection element 104 on the mounting substrate 102.

  Further, in the above-mentioned Patent Document 1, in manufacturing the above light emitting device, as shown in FIG. 4, a first bonding process for bonding the silicon substrate 140 a on which the light detection element 104 is formed and the intermediate layer substrate 130 is performed. Then, a polishing step for polishing the silicon substrate 140a to a desired thickness is performed, followed by a light extraction window forming step for forming a light extraction window 141 on the silicon substrate 140a, and then the light emitting element 101 is mounted. A second bonding step for bonding the base substrate 120 and the intermediate layer substrate 130 is performed, and in the first bonding step and the second bonding step, the bonding surfaces are activated before bonding. It is described that the bonding surfaces are brought into contact with each other to perform normal temperature bonding.

  Hereinafter, an example of a method of forming each of the base substrate 120, the intermediate layer substrate 130, and the light detection element formation substrate 140 will be described.

  In forming the base substrate 120, first, a thermal oxidation process is performed in which a silicon oxide film is formed on one surface side (upper surface side in FIG. 3) and the other surface side (lower surface side in FIG. 3) by a thermal oxidation method. Then, in order to form a mask for forming the through-hole 122a for forming the through-hole wiring 124 and the through-hole 122b for forming the thermal via 126 in the silicon substrate 120a, a photolithography technique and an etching technique are used. The silicon oxide film on the one surface side of the silicon substrate 120a is patterned, and the silicon substrate 120a is dry-etched from the one surface side to the silicon oxide film on the other surface side using the patterned silicon oxide film as a mask. Through-hole forming step for forming through-holes 122a and 122b Do.

  Subsequently, after the silicon oxide film is removed by etching, an insulating film 123 made of a silicon oxide film is formed by thermal oxidation on the one surface side and the other surface side of the silicon substrate 120a and the inner surfaces of the through holes 122a and 122b. An insulating film forming step is performed to form a conductor portion that closes the through holes 122a and 122b on the other surface side of the silicon substrate 120a, and then an anode (not shown) disposed opposite to the one surface side of the silicon substrate 120a. ) And the cathode (conductor portion) blocking the through holes 122a and 122b on the other surface side of the silicon substrate 120a, and the metal portion that becomes the through hole wiring 124 and the thermal via 126 is the conductor portion. Electroplating step for depositing along the thickness direction of the silicon substrate 120a from the exposed surface on the through-holes 122a, 122b side And then performing a polishing step of removing unnecessary portions formed on the one surface side of the silicon substrate 120a and the conductor portion on the other surface side of the silicon substrate 120a by CMP or the like from the metal portion. An external connection electrode 127b electrically connected to the through hole wiring 24 on the other surface side of 120a, and an external connection electrode (not shown) connected to the through hole wiring electrically connected to the light emitting element 101. ) And an electrode forming step for forming the heat dissipating pad portion 28, and subsequently, the conductor pattern 125b, the conductor pattern 125a in which the light emitting element 101 is electrically connected to the one surface side of the silicon substrate 120a, and the bonding metal The base substrate 120 is obtained by performing a metal film forming process for forming the film 129.

  Further, when forming the intermediate layer substrate 30, a mask for forming a silicon oxide film on the one surface side (upper surface side in FIG. 3) and the other surface side (lower surface side in FIG. 3) of the silicon substrate 130a by a thermal oxidation method. An oxide film forming step is performed.

  Thereafter, in order to form a mask for forming the through-hole 132 for forming the through-hole wiring 134 in the silicon substrate 130a, a silicon oxide film on the other surface side of the silicon substrate 130a is used by using a photolithography technique and an etching technique. And forming a through hole 132 by dry-etching the silicon substrate 130a from the other surface side to the silicon oxide film on the one surface side using the patterned silicon oxide film as a mask. Subsequently, after each silicon oxide film is removed by etching, the insulating film 123 made of a silicon oxide film is formed on the one surface side and the other surface side of the silicon substrate 130a and the inner surface of the through hole 132 by a thermal oxidation method. An insulating film forming step to be formed is performed.

  Thereafter, a through-hole wiring forming process is performed in which the through-hole wiring 134 is formed inside the through-hole 132 of the silicon substrate 130a by using an electroplating method. When forming the through-hole wiring 134 by using the electroplating method, after the other surface side of the silicon substrate 130a is closed with a metal thin film or the like, the metal part serving as the basis of the through-hole wiring 134 is bottom-up grown. After that, the unnecessary portion of the metal portion is removed by CMP or the like to form the through-hole wiring 134.

  Then, in order to form a mask for forming the opening window 131 in a portion corresponding to the opening window 131 on the one surface of the silicon substrate 130a, the one surface of the silicon substrate 130a is used by using a photolithography technique and an etching technique. Patterning the insulating film 133 on the side, and anisotropically etching the silicon substrate 130a from the one surface side using an alkaline solution (for example, KOH aqueous solution, TMAH aqueous solution, etc.) using the patterned insulating film 133 as a mask. Thus, the opening window 131 is formed.

  Thereafter, a back-side metal film forming step for forming conductor patterns 135 and 135 and a bonding metal layer 136 on the other surface side of the silicon substrate 130a is performed, and then the conductor patterns 137 and 137 are formed on the one surface side of the silicon substrate 130a. And the surface side metal film formation process which forms the said metal layer for joining is performed.

In addition, with respect to the photodetecting element forming substrate 140, one surface of the n-type region 104b constituted by the n-type silicon substrate 140a by using an ion implantation technique, a diffusion technique, or the like before joining to the intermediate layer substrate 130. After forming the p-type region 104a of the photodetecting element 104 on the side, an insulating film 143 is formed on the one surface side of the silicon substrate 140a, and then contact holes 143a and 143b are formed using photolithography technology and etching technology. After the formation, the conductor patterns 147 and 147 and the bonding metal film are formed using a thin film forming technique such as a sputtering method, a photolithography technique and an etching technique, and after joining to the intermediate layer substrate 130, a light extraction window 141 is formed.
JP 2007-294834 A

  In the light emitting device having the configuration shown in FIG. 3, heat generated in the light emitting element 101 is transferred to the back side of the base substrate 120 through the thermal via 126 as a heat transfer path. Since the cross-sectional area of the heat transfer path is small because it is formed at the same time, a light-emitting device that can dissipate the heat generated in the light-emitting element 101 more efficiently and can achieve higher output is expected. It was. Further, in the light emitting device having the configuration shown in FIG. 3, there is a concern that the heat generated in the light emitting element 101 is transferred to the light detecting element 104 and the output of the light detecting element 104 may fluctuate. There is a concern that the increase in the optical output of the element 101 is limited.

  In the above light emitting device, the size of the thermal via 126 is increased to form a heat dissipating core (heat dissipating part) or the density of the thermal via 126 is increased to improve the heat dissipating efficiency, and the input power to the light emitting element 101 is increased. When the optical output is increased by increasing the thermal output, the thermal via 126 may thermally expand and the base substrate 120 may be damaged.

  Further, in the above-described method for manufacturing a light emitting device, in order to form the through-hole wirings 134 and 124 in the intermediate layer substrate 130 and the base substrate 120, respectively, an oxide film that forms a silicon oxide film before the through-hole wiring forming step Forming step, coating step of applying a resist layer made of photoresist on silicon oxide film formed in oxide film forming step, photolithography step of exposing and developing resist layer, resist patterned in photolithography step An oxide film mask forming step for etching the silicon oxide film using the layer as a mask, a resist layer removing step for removing the resist layer after the oxide film mask forming step, and the through-hole 132 using the silicon oxide film as a mask after the resist layer removing step , 122a, through-hole forming step, silicon substrates 130a, 120a Of double-sided and the inner surface of the through-holes 132,122a forming an insulating film 133,123 insulating film forming step is required, since the number of steps is large, simplify the manufacturing process has been expected.

  The present invention has been made in view of the above reasons, and an object of the present invention is to provide a light emitting device capable of increasing the light output of the light emitting element and simplifying the manufacturing process, and a method for manufacturing the same. is there.

  The invention of claim 1 includes a light emitting element and a base substrate on which the light emitting element is mounted, and the base substrate has a conductive pattern electrically connected to the light emitting element formed on one surface side of the insulating structure. In addition, an external connection electrode is formed on the other surface side, and a through-hole wiring that electrically connects the conductor pattern and the external connection electrode and a heat dissipation portion made of a metal material that is thermally coupled to the light emitting element are insulated. The insulating structure is made of a cured product of the photosensitive resin composition, and is formed through the body in the thickness direction.

  According to the present invention, the base substrate on which the light emitting element is mounted has the conductor pattern electrically connected to the light emitting element formed on one surface side of the insulating structure and the external connection electrode formed on the other surface side. A through-hole wiring that electrically connects the conductor pattern and the external connection electrode and a heat dissipation portion that is thermally coupled to the light-emitting element are provided in the thickness direction of the insulating structure. Since the photosensitive resin composition is cured, the light output of the light emitting element can be increased and the manufacturing process can be simplified. Moreover, since the cured product of the photosensitive resin composition constituting the insulating structure is made of a material having a lower Young's modulus than the heat dissipation portion, the base substrate is damaged even if the heat dissipation portion is thermally expanded. Therefore, it is possible to increase the light output of the light emitting element.

  According to a second aspect of the present invention, in the first aspect of the present invention, the light emitted from the light emitting element is formed by using the base substrate and a silicon substrate so as to face the base substrate to form a light extraction window. A light detection element forming substrate on which a light detection element for detecting a part of the light detection element is formed, and a light extraction window in a thickness direction of a second insulation structure different from the first insulation structure made of the insulation structure A mounting substrate formed with an intermediate layer substrate formed between the base substrate and the photodetecting element forming substrate, in which an open window is formed and a through-hole wiring electrically connected to the photodetecting device is formed And the second insulating structure is made of a cured product of the photosensitive resin composition.

  According to the present invention, the mounting substrate is formed by using the base substrate and the silicon substrate, and is disposed so as to face the base substrate to form the light extraction window, and at the same time, a part of the light emitted from the light emitting element is obtained. A light detection element forming substrate on which a light detection element to be detected is formed, and an opening window communicating with the light extraction window in the thickness direction of the second insulating structure different from the first insulating structure made of the insulating structure And a through hole wiring electrically connected to the photodetecting element is formed, and an intermediate layer substrate interposed between the base substrate and the photodetecting element forming substrate is provided, and the second insulating structure includes Since it consists of the hardened | cured material of the photosensitive resin composition, the simplification of a manufacturing process can be aimed at, employing the structure which provided the photon detection element in the mounting board | substrate.

  The invention of claim 3 is the method for manufacturing the light emitting device according to claim 1, wherein the base substrate is formed on the one surface side of the metal plate in which a portion serving as a heat radiating portion protrudes on the one surface side. A photosensitive resin layer forming step of forming a photosensitive resin layer by applying a photosensitive resin composition that forms the basis of the insulating structure, and exposing and developing the photosensitive resin layer after the photosensitive resin layer forming step A through-hole wiring forming step in which a through-hole wiring is formed, a through-hole wiring forming step in which a through-hole wiring is formed by a plating method after the photolithography step, and a metal plate after the through-hole wiring forming step. A polishing step for polishing and removing portions other than the heat radiating portion, and a metal film forming step for forming a metal film constituting each of the conductor pattern and the external connection electrode after the polishing step. .

  According to this invention, when forming the base substrate, the photosensitive resin composition for the insulating structure is applied to the one surface side of the metal plate to form the photosensitive resin layer, and the photosensitive resin layer is formed in a predetermined manner. Since an insulating structure having a through hole can be formed by exposing and developing through a photomask, an oxidation for forming a silicon oxide film prior to the through hole wiring forming step as in the prior art. Patterned in a film forming process, a coating process in which a resist layer made of a photoresist is applied on a silicon oxide film formed in an oxide film forming process, a photolithography process in which the resist layer is exposed and developed, and a photolithography process Oxide mask formation process for etching silicon oxide film using resist layer as mask, Resist layer for removing resist layer after oxide film mask formation process After the leaving step, the resist layer removing step, it is necessary to sequentially perform a through hole forming step for forming a through hole using a silicon oxide film as a mask, and an insulating film forming step for forming an insulating film on both surfaces of the silicon substrate and the inner surface of the through hole. As compared with a certain case, it is possible to provide a light emitting device capable of increasing the light output of the light emitting element and simplifying the manufacturing process.

  The invention of claim 4 is a method for manufacturing a light emitting device according to claim 2, wherein in the formation of the base substrate as a pre-stage of the joining step of joining the base substrate on which the light emitting element is mounted and the intermediate layer substrate, The first photosensitive resin layer is formed by applying a photosensitive resin composition serving as a basis of the first insulating structure to the one surface side of the metal plate in which the portion to be the heat radiating portion protrudes on the one surface side. The first photosensitive resin layer forming step, and after the first photosensitive resin layer forming step, the first photosensitive resin layer is exposed and developed to form a through hole in a region where the through hole wiring is to be formed. A first photolithography step to be formed, a through-hole wiring forming step for forming a through-hole wiring by a plating method after the first photolithography step, and a portion other than the heat dissipation portion of the metal plate after the through-hole wiring forming step Polishing process to polish and remove And a metal film forming step of forming a metal film constituting each of the conductor pattern and the external connection electrode, and in the formation of the intermediate layer substrate, the silicon substrate in which the photodetecting element is formed on one surface side is provided. A second photosensitive resin layer forming step of forming a second photosensitive resin layer by applying a photosensitive resin composition serving as a basis of the second insulating structure on one surface side; and a second photosensitive resin After the layer formation process, the silicon substrate is polished to the desired thickness from the other surface side, and after the substrate polishing process, the light extraction window is formed on the silicon substrate by etching the area where the light extraction window is to be formed. A light extraction window forming step, and after the light extraction window forming step, the second photosensitive resin layer is exposed and developed to form an opening window and to form a through hole in a region where the through hole wiring is to be formed. Second photo A through-hole wiring forming step of forming a through-hole wiring by plating after the photolithography process, the second photolithography process, and a conductor pattern electrically connected to the through-hole wiring after the through-hole wiring forming process A metal film forming step of forming a metal film.

  According to this invention, in forming the base substrate, the photosensitive resin composition for the first insulating structure is applied to the one surface side of the metal plate to form the first photosensitive resin layer, A first insulating structure having a through hole can be formed by exposing and developing the first photosensitive resin layer through a predetermined first photomask, and in forming the intermediate layer substrate, A photosensitive resin composition for the second insulating structure is applied to the one surface side of the silicon substrate to form a second photosensitive resin layer, and the second photosensitive resin layer is formed on the predetermined second side. A second insulating structure having an opening window and a through-hole can be formed by exposing and developing through a photomask, so that silicon oxide is formed before the through-hole wiring forming step as in the prior art. Formed in oxide film formation process, oxide film formation process to form a film The silicon oxide film is etched using the coating process of applying a resist layer made of a photoresist on the silicon oxide film, the photolithography process of exposing and developing the resist layer, and the resist layer patterned in the photolithography process as a mask An oxide film mask forming step, a resist layer removing step for removing the resist layer after the oxide film mask forming step, a through hole forming step for forming a through hole using the silicon oxide film as a mask after the resist layer removing step, A light emitting device capable of increasing the light output of the light emitting element and simplifying the manufacturing process as compared with the case where it is necessary to sequentially perform an insulating film forming process for forming an insulating film on both surfaces and the inner surface of the through hole. Can be provided. In addition, it is possible to provide a light-emitting device that can further simplify the manufacturing process as compared with the conventional case where a bonding process for bonding the light detection element formation substrate and the intermediate layer substrate is necessary.

  According to the first aspect of the invention, it is possible to increase the light output of the light emitting element and to simplify the manufacturing process.

  According to the third and fourth aspects of the invention, there is an effect that it is possible to provide a light emitting device that can increase the light output of the light emitting element and can simplify the manufacturing process.

  Hereinafter, after describing the light emitting device of the present embodiment based on FIG. 1, the manufacturing method will be described based on FIG. 2.

  The light-emitting device of this embodiment includes a light-emitting element 1 composed of an LED chip and a housing recess 2a that houses the light-emitting element 1, formed on one surface, and the light-emitting element 1 mounted on the inner bottom surface of the housing recess 2a. 2 and a light-transmitting material (for example, silicone resin, acrylic resin, epoxy resin, polycarbonate resin, glass, etc.) filled in the housing recess 2a of the mounting substrate 2 and electrically connected to the light-emitting element 1 and the light-emitting element 1 A sealing portion 5 sealing the bonding wire 14 connected to the lens, a lens 3 disposed so as to overlap the sealing portion 5, and a light detection that detects light emitted from the light emitting element 1 provided on the mounting substrate 2. An element 4 is provided. Here, the mounting substrate 2 has a hook-like protrusion 2c protruding inward from the peripheral portion of the housing recess 2a on the one surface side, and the light detection element 4 is provided on the protrusion 2c. ing.

  The mounting substrate 2 includes a rectangular plate-like base substrate 20 on which the light-emitting element 1 is mounted on one surface side, and an elliptical light extraction window 41 formed on the one surface side of the base substrate 20 so as to be light. A light detection element forming substrate 40 on which the detection element 4 is formed, and an intermediate layer in which a rectangular opening window 31 that is interposed between the base substrate 20 and the light detection element formation substrate 40 and communicates with the light extraction window 41 is formed. A space surrounded by the base substrate 20, the intermediate layer substrate 30, and the photodetecting element forming substrate 40 constitutes the housing recess 2a. Here, the outer peripheral shapes of the base substrate 20, the intermediate layer substrate 30, and the light detection element formation substrate 40 are rectangular, and the intermediate layer substrate 30 and the light detection element formation substrate 40 are formed to have the same outer dimensions as the base substrate 20. Yes. Further, the thickness dimension of the light detection element forming substrate 40 is set smaller than the thickness dimension of the base substrate 20 and the intermediate layer substrate 30. Here, in this embodiment, an LED chip of 0,3 mm □ is used as the light emitting element 1, the thickness dimension of the light emitting element 1 is 115 μm, the planar size of the mounting substrate 2 is 2 mm □, and the thickness dimension of the base substrate 200 is set. Although 200 μm, the thickness dimension of the intermediate layer substrate 30 is set to 300 μm, the thickness dimension of the light detection element forming substrate 40 is set to 100 μm, and the thickness dimension of the lens 3 is set to 400 μm, these numerical values are merely examples and are particularly limited. It is not a thing. In the present embodiment, the portion of the light detection element forming substrate 40 that protrudes above the opening window 31 of the intermediate layer substrate 30 constitutes the protruding portion 2c described above.

  The base substrate 20 is electrically connected to each of the electrodes 11 and 12 of the light emitting element 1 on one surface side (upper surface side in FIG. 1) of a rectangular plate-like insulating structure (hereinafter referred to as a first insulating structure) 20a. 2 are connected to the photodetecting element 4 through two through-hole wirings 34 and 34, which will be described later, formed in the intermediate layer substrate 30. Four conductor patterns 25b, 25b are formed, and each of the conductor patterns 25a, 25a, 25b, 25b and four external connections formed on the other surface side (lower surface side in FIG. 1) of the first insulating structure 20a The electrodes 27a, 27a, 27b, and 27b are electrically connected through one through-hole wiring 24, respectively. The base substrate 20 is also formed with a first bonding metal layer (not shown) for bonding to the intermediate layer substrate 30 on the one surface side of the first insulating structure 20a. Here, the 1st insulating structure 20a is comprised by the hardened | cured material of the photosensitive resin composition which has electrical insulation. The photosensitive resin composition for the first insulating structure 20a can be formed into a thick film having a thickness of 5 to 700 μm, has high chemical resistance and heat resistance, and has a high aspect ratio by exposure and development. (For example, a photoresist that can be used as a permanent film after patterning by exposure and development) is used. Here, a through-hole 22 described later in the first insulating structure 20a has a circular opening shape and an inner diameter set to 10 μm, but this numerical value is an example and is not particularly limited.

  The light-emitting element 1 in this embodiment is a visible light LED chip in which electrodes 11 and 12 are formed on both surfaces in the thickness direction using a conductive substrate as a crystal growth substrate. Therefore, the base substrate 20 has one of the two conductor patterns 25a and 25a to which the light emitting element 1 is electrically connected, a rectangular die pad portion 25aa to which the light emitting element 1 is die-bonded, and The lead-out wiring part 25ab is formed integrally with the die pad part 25aa and is a connection part with the through-hole wiring 24. In short, the light-emitting element 1 is die-bonded to the die pad portion 25aa of the one conductor pattern 25a, and the electrode 12 on the die pad portion 25aa side is joined and electrically connected to the die pad portion 25aa, so that The electrode 11 is electrically connected to the other conductor pattern 25 a through the bonding wire 14.

  Further, the base substrate 20 has a heat radiating core 26 made of a metal material (for example, Cu) thermally coupled to the light emitting element 1 penetrating in the thickness direction of the first insulating structure 20a. The die pad portion 25aa is stacked on the heat dissipation core 26 on the one surface side of the insulating structure 20a, and the heat dissipation pad portion 28 is stacked on the heat dissipation core 26 on the other surface side of the first insulating structure 20a. The die pad portion 25aa and the heat dissipating pad portion 28 are made of a metal material (for example, Cu) having a higher thermal conductivity than the first insulating structure 20a and the silicon substrate 120a described with reference to FIG. The heat generated in the light emitting element 1 is radiated through the heat radiating core 26 and the heat radiating pad portion 28. In the present embodiment, the planar size of the heat radiating core 26 is set to be the same as the planar size of the light emitting element 1. However, in order to improve heat dissipation, the planar size of the radiating core 26 is larger than that of the light emitting element 1. It is desirable to set a larger value. Further, in the present embodiment, the heat radiating core 26 constitutes a heat radiating portion made of a metal material that is thermally coupled to the light emitting element 1.

  By the way, the base substrate 20 has the above-described through-hole wiring 24 formed inside each of the four through-holes 22 penetrating in the thickness direction of the first insulating structure 20a, and each conductor pattern 25a, 25a, 25b, 25b, the first bonding metal layer, the external connection electrodes 27a, 27a, 27b, 27b, the heat dissipating pad portion 28, the through-hole wiring 24, and the heat dissipating core 26 are electrically connected to the first insulating structure 20a. Is insulated. In the base substrate 20, a reflective film 29 that reflects the light emitted from the light emitting element 1 is formed on an appropriate portion of the first insulating structure 20a on the one surface side.

  Here, the conductor patterns 25a, 25a, 25b, and 25b, the first bonding metal layer, the external connection electrodes 27a, 27a, 27b, and 27b, the heat dissipation pad portion 28, and the reflective film 29 are made of an Au film. It is comprised with such a metal film. In the present embodiment, the thickness of the Au film is set to 500 nm, but this numerical value is an example and is not particularly limited. Moreover, although Cu is adopted as the material of the through-hole wiring 24 and the heat dissipation core 26, it is not limited to Cu, and for example, Ni, Al, or the like may be adopted.

  The intermediate layer substrate 30 has two conductors joined and electrically connected to the two conductor patterns 25b and 25b of the base substrate 20 on one surface side (the lower surface side in FIG. 1) of the second insulating structure 30a. Patterns 35 and 35 are formed, and a second bonding metal layer (not shown) bonded to the first bonding metal layer of the base substrate 20 is formed. Here, the 2nd insulating structure 30a is comprised by the hardened | cured material of the photosensitive resin composition which has electrical insulation. The photosensitive resin composition for the second insulating structure 30a can be formed into a thick film having a thickness of 5 to 700 μm, has high chemical resistance and heat resistance, and has a high aspect ratio by exposure and development. (For example, a photoresist that can be used as a permanent film after patterning by exposure and development) is used. Here, a later-described through hole 32 in the second insulating structure 30a has a circular opening shape and an inner diameter set to 10 μm, but this numerical value is an example and is not particularly limited.

  The above-described intermediate layer substrate 30 has the above-described two through-hole wirings 34 formed inside each of the two through-holes 32 penetrating in the thickness direction of the second insulating structure 30a. The second bonding metal layer is electrically insulated from the second insulating structure 30a. Here, each of the conductor patterns 35 and 35 and the second bonding metal layer is made of a metal film such as an Au film. In the present embodiment, the thickness of the Au film is set to 500 nm, but this numerical value is an example and is not particularly limited. Further, the material of each Au film is not limited to pure gold, and may be one added with impurities. Further, although Cu is adopted as the material of the through-hole wiring 34, it is not limited to Cu, and for example, Ni, Al or the like may be adopted.

  A reflective film 39 made of a metal film such as an Au film that reflects the light emitted from the light emitting element 1 is laminated on the inner side surface of the opening window 31 of the intermediate layer substrate 30. The reflective film 39 is not limited to the Au film, and may be composed of, for example, an Al film.

  The photodetecting element forming substrate 40 is formed using a silicon substrate 40a having an n-type conductivity type and a main surface of (100) plane, and an intermediate surface is formed on one surface side (lower surface side in FIG. 1) of the silicon substrate 40a. Two conductor patterns 47a and 47b that are electrically connected to the two through-hole wirings 34 and 34 of the layer substrate 30 are formed. The light detecting element 4 in the light detecting element forming substrate 40 is constituted by a photodiode, and one of the two conductor patterns 47a and 47b formed on the one surface side of the silicon substrate 40a is detected by light. The p-type region 4a of the photodiode constituting the element 4 is electrically connected, and the other conductor pattern 47b is electrically connected to the silicon substrate 40a constituting the n-type region 4b of the photodiode.

  Further, the photodetecting element forming substrate 40 has an insulating film 43 made of a silicon oxide film formed on the one surface side where the p-type region 4a whose surface is a light receiving surface is formed in the silicon substrate 40a. 43 also serves as an antireflection film for the photodiode. The conductor patterns 47a and 47b are electrically connected to the p-type region 4a and the n-type region 4b through contact holes formed in the insulating film 43, respectively. Here, each of the conductor patterns 47a and 47b is composed of a laminated film of a Ti film formed on the insulating film 43 and an Au film formed on the Ti film.

  Further, the lens 3 described above is formed into a plano-convex lens shape using a translucent material (for example, a silicone resin, an acrylic resin, an epoxy resin, a polycarbonate resin, glass, or the like), and is a convex that serves as a light emitting surface. The curved surface is constituted by a part of an elliptical spherical surface. The shape of the lens 3 is not particularly limited, and may be set appropriately according to the desired light distribution characteristics.

  Hereinafter, the manufacturing method of the light-emitting device according to the present embodiment will be described with reference to FIG. 2. As a pre-stage of a bonding process for bonding the base substrate 20 on which the light-emitting element 1 is mounted and the intermediate layer substrate 30, the base substrate 20 is provided. 2 (a) to 2 (g), and the formation method of the intermediate layer substrate 30 and the light detection element formation substrate 40 will be described based on FIGS. 2 (i) to 2 (n). Of course, the formation of the base substrate 20 and the formation of the intermediate layer substrate 30 and the light detection element formation substrate 40 may be performed in parallel.

  In forming the base substrate 20, first, a metal plate (Cu plate) 26a (see FIG. 2A) serving as the basis of the heat dissipation core 26 is counterbored so that the portion that becomes the heat dissipation core 26 protrudes to one surface side. The structure shown in FIG. 2B is obtained by performing a metal plate processing step for forming the provided metal plate 26a.

  Thereafter, a photosensitive resin composition serving as a basis of the first insulating structure 20a is applied to the one surface side of the metal plate 26a by a spin coating method to form a first photosensitive resin layer 20a ′. The structure shown in FIG. 2C is obtained by performing the photosensitive resin layer forming step. In addition, as a photosensitive resin composition, a negative type may be used and a positive type may be used.

  After the second photosensitive resin layer forming step, the first insulating structure having the through holes 22 in the respective formation regions of the respective through hole wirings 24 by exposing and developing the first photosensitive resin layer 20a ′. The structure shown in FIG. 2D is obtained by performing the first photolithography process for forming the body 20a.

  Thereafter, by performing a through-hole wiring forming step of forming a through-hole wiring 24 made of a metal material (for example, Cu, Al, Ni, etc.) using a plating method (electroplating method or the like), FIG. ) Is obtained.

  After the through-hole wiring forming step, a structure shown in FIG. 2F is obtained by performing a polishing step of polishing and removing portions other than the heat radiating core 26 of the metal plate 26a.

  Thereafter, the metal patterns constituting the conductor patterns 25a, 25a, 25b, and 25b, the first bonding metal layer, the reflective film 29, the external connection electrodes 27a, 27a, 27b, and 27b, and the heat radiation pad portion 28 are formed. By performing the metal film forming step, the base substrate 20 having the structure shown in FIG. 2G is obtained. The conductor pattern 25a, 25a, 25b, 25b formed on the one surface side of the first insulating structure 20a, the first bonding metal layer, and the reflective film 29 are simultaneously formed to form the first insulating structure. External connection electrodes 27a, 27a, 27b, 27b and a heat radiation pad portion 28 formed on the other surface side of 20a are formed simultaneously. Specifically, in the metal film forming step, a metal film is formed on the entire surface of the one surface side of the first insulating structure 20a by a PVD method (for example, a vapor deposition method, a sputtering method, etc.), and then the metal Conductive patterns 25a, 25a, 25b, and 25b, the first bonding metal layer, and the reflective film 29 are formed by patterning the film using a photolithography technique and an etching technique, and the first insulating structure 20a. After a metal film is formed on the entire surface on the other surface side by a PVD method (for example, vapor deposition method, sputtering method, etc.), the metal film is patterned using a photolithography technique and an etching technique to thereby form an external connection electrode. 27a, 27a, 27b, 27b and a heat dissipating pad portion 28 are formed.

  Next, a method for forming the light detection element formation substrate 40 and the intermediate layer substrate 30 will be described.

  First, a photodetecting element forming step of forming the photodetecting element 4 on one surface side (the upper surface side in FIG. 2 (i)) of the silicon substrate 40a (FIG. 2 (i)) that is the basis of the photodetecting element forming substrate 40. By doing so, the structure shown in FIG. In the photodetecting element forming step, the p-type region 4a of the photodetecting element 4 is formed on one surface side of the n-type region 4b constituted by the n-type silicon substrate 40a by using an ion implantation technique or a diffusion technique. After the formation, an insulating film 43 is formed on the one surface side of the silicon substrate 40a, and then contact holes are formed using a photolithography technique and an etching technique, and then the conductor patterns 47a and 47b are formed by sputtering or the like. It is formed using thin film formation technology, photolithography technology, and etching technology.

  After the above-described photodetecting element forming step, a photosensitive resin composition serving as a basis of the second insulating structure 30a is applied to the one surface side of the silicon substrate 40a by a spin coat method, and a second photosensitive resin layer is formed. By performing the second photosensitive resin layer forming step of forming 30a ′, the structure shown in FIG. 2K is obtained. In addition, as a photosensitive resin composition, a negative type may be used and a positive type may be used.

  After the second photosensitive resin layer forming step, a structure shown in FIG. 2L is obtained by performing a substrate polishing step of polishing the silicon substrate 40a from the other surface side to a desired thickness (for example, 100 μm). .

  Then, the structure shown in FIG. 2M is obtained by performing a light extraction window forming step of forming the light extraction window 41 by etching a portion where the light extraction window 41 is to be formed in the silicon substrate 40a. In the light extraction window forming step, a mask layer having an opening corresponding to the light extraction window 41 is formed on the other surface side of the silicon substrate 40a, and the silicon substrate 40a is second photosensitive from the other surface side. The light extraction window 41 is formed by etching using the resin layer 30a ′ as an etching stopper layer, and then the mask layer is removed. In the light extraction window forming step, the light extraction window 41 is formed by dry etching using an inductively coupled plasma (ICP) type dry etching apparatus, but an alkaline solution (for example, a TMAH aqueous solution) is used. The light extraction window 41 may be formed by wet etching.

  After the above-described light extraction window forming step, the second photosensitive resin layer 30a ′ is exposed and developed to form an opening window 31 and a through hole 32 is formed in a region where each through hole wiring 34 is to be formed. Through-hole wiring formation in which a second photolithography step is performed, and then a through-hole wiring 34 made of a metal material (for example, Cu, Al, Ni, etc.) is formed using a plating method (electroplating method, etc.) Performing a reflection film forming process for forming the reflection film 39, and subsequently conducting patterns 35 and 35 electrically connected to the through-hole wiring 34 and the second bonding metal layer, respectively. By performing the metal film forming step for forming the metal film, the structure shown in FIG. In the metal film forming step, the conductor patterns 35 and 35 formed on the one surface side of the second insulating structure 30a and the second bonding metal layer are simultaneously formed. Specifically, in the metal film forming step, a metal film is formed on the entire surface of the one surface side of the second insulating structure 30a by the PVD method (for example, vapor deposition method, sputtering method, etc.), and then the metal Conductive patterns 35 and 35 and the second bonding metal layer are formed by patterning the film using a photolithography technique and an etching technique.

  After the above-mentioned pre-stage process, a bonding process is performed in which the base substrate 20 on which the light emitting element 1 is mounted (the base substrate 20 on which the light emitting element 1 is mounted and the bonding wires 14 are connected) and the intermediate layer substrate 30 are bonded. Thus, the mounting substrate 2 having the structure shown in FIG. Here, in the bonding process, the bonding surfaces are contacted with each other after the bonding surfaces are cleaned and activated by irradiating the bonding surfaces with argon plasma, ion beam or atomic beam in vacuum before bonding. The room-temperature bonding method is used, in which direct bonding is performed at room temperature. In this bonding step, the first bonding metal layer of the base substrate 20 and the second bonding metal layer of the intermediate layer substrate 30 are bonded, and the conductor patterns 25b and 25b of the base substrate 20 and the intermediate layer are bonded. The conductor patterns 35 and 35 of the substrate 30 are joined and electrically connected. The bonding process is not limited to the room temperature bonding method, and a bonding method using a low melting point eutectic material such as AuSn or solder may be adopted depending on the heat resistance temperature of each of the insulating structures 20a and 20b. Further, in the bonding step, after normalizing and activating each of the bonding surfaces described above, the bonding surfaces may be brought into contact and directly bonded at a specified temperature higher than room temperature (for example, 80 ° C.).

  After the above-described joining step, the housing recess 2a of the mounting substrate 2 is filled with a translucent material for sealing (for example, silicone resin, acrylic resin, epoxy resin, polycarbonate resin, glass, etc.), and the sealing portion 5 It is only necessary to perform a sealing part forming step of forming the lens and a lens disposing step of disposing the lens 3 on the sealing part 5 after the sealing part forming step. In the lens arranging step, the lens 3 is bonded with a translucent adhesive. However, the lens 3 may be molded on the sealing portion 5 or integrally formed with the sealing portion 5. Also good.

  In the manufacturing method of the light emitting device described above, wafer-like ones are used as the metal plate 26a and the silicon substrate 40a, respectively, and the wafer level package structure is obtained by performing each process up to the lens arrangement process described above at the wafer level. After being formed, the light emitting device is divided into individual light emitting devices by a dicing process. Therefore, the base substrate 20, the intermediate layer substrate 30, and the light detection element forming substrate 40 have the same outer size, and a small package can be realized and manufactured. Becomes easier.

  In the manufacturing method of the light emitting device of the present embodiment described above, the first insulating structure is formed in the formation of the base substrate 20 as a pre-stage of the bonding step of bonding the base substrate on which the light emitting element is mounted and the intermediate layer substrate. A photosensitive resin composition for 20a is applied to the one surface side of the metal plate 26a to form a first photosensitive resin layer 20a ′, and the first photosensitive resin in the first photolithography step described above. By exposing and developing the layer 20a ′ through a predetermined first photomask (not shown), the first insulating structure 20a having the through hole 22 can be formed. In the formation, the photosensitive resin composition for the second insulating structure 30a is applied to the one surface side of the silicon substrate 40a to form the second photosensitive resin layer 30a ′, and the second photo resin described above is formed. Lithography The second insulating structure having the opening window 31 and the through-hole 32 by exposing and developing the second photosensitive resin layer 30a ′ through a predetermined second photomask (not shown). 30a can be formed, so that a photoresist is formed on the silicon oxide film formed in the oxide film forming step and the oxide film forming step for forming the silicon oxide film before the through-hole wiring forming step as in the prior art. A coating process for applying a resist layer, a photolithography process for exposing and developing the resist layer, an oxide film mask forming process for etching a silicon oxide film using the resist layer patterned in the photolithography process as a mask, an oxide film Resist layer removal process to remove resist layer after mask formation process, mask silicon oxide film after resist layer removal process As compared with the case where it is necessary to sequentially perform a through-hole forming step for forming a through-hole and an insulating film forming step for forming an insulating film on both surfaces of the silicon substrate and the inner surface of the through-hole, the light output of the light-emitting element 1 is higher. A light-emitting device which can be output and can simplify a manufacturing process can be provided. In addition, a light emitting device that can further simplify the manufacturing process compared to the case where a bonding process for bonding the light detection element formation substrate 140 and the intermediate layer substrate 130 is required as in the conventional example shown in FIG. Can be provided.

  Moreover, according to the manufacturing method of the light-emitting device described above, in the bonding step of bonding the intermediate layer substrate 30 and the base substrate 20 on which the light-emitting element 1 is mounted, the bonding surfaces are activated after the bonding surfaces are activated before bonding. Since the surfaces are brought into contact with each other at room temperature, the junction temperature of the light-emitting element 1 can be prevented from exceeding the maximum junction temperature in the bonding step, and the characteristics of the light-emitting element 1 can be prevented from deteriorating.

  In the light emitting device of the present embodiment described above, the base substrate 20 on which the light emitting element 1 is mounted has the conductor patterns 25a, which are electrically connected to the light emitting element 1 on the one surface side of the first insulating structure 20a. 25a is formed and external connection electrodes 27a and 27a are formed on the other surface side, and through-hole wirings 24 and 24 for electrically connecting the conductor patterns 25a and 25a and the external connection electrodes 27b and 27b and light emission Since the heat dissipation core 26 that is thermally coupled to the element 1 is formed through the first insulating structure 20a in the thickness direction, and the first insulating structure 20a is made of a cured product of the photosensitive resin composition. The light output of the light emitting element 1 can be increased and the manufacturing process can be simplified. Further, in the light emitting device of this embodiment, the cured product of the photosensitive resin composition constituting the first insulating structure 20a is formed of a material having a lower Young's modulus than the heat radiating core 26. Since the base substrate 20 can be prevented from being damaged even when the core 26 is thermally expanded, the light output of the light emitting element 1 can be increased.

  Further, in the light emitting device of the present embodiment, the mounting substrate 2 is formed using the base substrate 20 and the silicon substrate 40a, and is disposed to face the base substrate 20 to form the light extraction window 41 and the light emitting element. A light detection element forming substrate 40 on which a light detection element 4 for detecting a part of the light emitted from 1 is formed, and an opening window 31 communicating with the light extraction window 41 in the thickness direction of the second insulating structure 30a. A through-hole wiring 34, 34 that is formed and electrically connected to the light detecting element 4 is formed, and an intermediate layer substrate 30 interposed between the base substrate 20 and the light detecting element forming substrate 40 is provided. Since the insulating structure 30a is made of a cured product of the photosensitive resin composition, the manufacturing process can be simplified while adopting the configuration in which the light detection element 4 is provided on the mounting substrate 2.

  By the way, in the above-mentioned embodiment, although the visible light LED chip is used as the light emitting element 1, the light emitting element 1 is laminated | stacked on not only a visible light LED chip but an ultraviolet light LED chip, LED chip, and the said LED chip. It may be composed of a phosphor layer formed of a phosphor that is excited by at least light emitted from the LED chip and emits light having a longer wavelength than the LED chip, or an organic EL element. In addition, as the light emitting element 1, for example, after a light emitting portion or the like is epitaxially grown on the main surface side of the crystal growth substrate, a conductive substrate (for example, a Si substrate) that supports the light emitting portion is fixed to the light emitting portion. You may use what removed the board | substrate for crystal growth. The base substrate 20 is not limited to the silicon substrate 20a, and may be formed using, for example, a metal plate. By forming the base substrate 20 using a metal plate, the heat generated in the light emitting element 1 can be radiated more efficiently. It becomes possible.

  The light detection element 4 is not limited to a photodiode, and may be, for example, a color sensor that combines a photodiode and a color filter, or a combination of a photodiode and a wavelength selection filter.

  Moreover, in the said embodiment, although the one light emitting element 1 is mounted in the inner bottom face of the storage recess 2a of the mounting board | substrate 2, the number of the light emitting elements 1 is not specifically limited, A several luminescent color is the same. The light emitting element 1 may be mounted on the inner bottom surface of the storage recess 2a. In the above-described embodiment, the mounting substrate 2 includes the base substrate 20, the light detection element formation substrate 40, and the intermediate layer substrate 30. However, the mounting substrate 2 may include only the base substrate 20.

It is a schematic sectional drawing of the light-emitting device of embodiment. It is main process sectional drawing for demonstrating the manufacturing method of a light-emitting device same as the above. It is a schematic sectional drawing of the light-emitting device which shows a prior art example. It is explanatory drawing of the manufacturing method of a light-emitting device same as the above.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Light emitting element 2 Mounting board | substrate 2a Storage recess 2c Protrusion part 4 Photodetection element 20 Base board | substrate 20a Insulation structure (1st insulation structure)
20a '1st photosensitive resin layer 22 Through-hole 24 Through-hole wiring 25a Conductor pattern 25b Conductor pattern 26 Heat dissipation core (heat dissipation part)
26a Metal plate 27a External connection electrode 27b External connection electrode 30 Intermediate layer substrate 30a Insulation structure (second insulation structure)
30a '2nd photosensitive resin layer 31 Opening window 32 Through-hole 34 Through-hole wiring 35 Conductor pattern 40 Photodetection element formation board 40a Silicon substrate 41 Light extraction window

Claims (4)

  A light emitting element and a base substrate on which the light emitting element is mounted. The base substrate is formed with a conductor pattern electrically connected to the light emitting element on one surface side of the insulating structure and externally on the other surface side. A connection electrode is formed, and a through-hole wiring that electrically connects the conductor pattern and the external connection electrode and a heat dissipation portion made of a metal material that is thermally coupled to the light emitting element are provided in the thickness direction of the insulating structure. The light emitting device is characterized in that the insulating structure is made of a cured product of a photosensitive resin composition.   Light that is formed using the base substrate and a silicon substrate, is disposed opposite to the base substrate, forms a light extraction window, and forms a light detection element that detects a part of the light emitted from the light emitting element. An opening window communicating with the light extraction window is formed in the thickness direction of the detection element forming substrate and the second insulating structure different from the first insulating structure made of the insulating structure, and the light detecting element is electrically A through-hole wiring connected to the base substrate and an intermediate layer substrate interposed between the photodetecting element forming substrate and a second insulating structure is a photosensitive resin. The light-emitting device according to claim 1, comprising a cured product of the composition.   2. The method for manufacturing a light emitting device according to claim 1, wherein when forming the base substrate, a portion serving as a heat radiating portion serves as a basis for an insulating structure on the one surface side of the metal plate protruding on the one surface side. A photosensitive resin layer forming step of forming a photosensitive resin layer by applying a photosensitive resin composition, and forming a through-hole wiring by exposing and developing the photosensitive resin layer after the photosensitive resin layer forming step A photolithography process for forming a through-hole in a predetermined region, a through-hole wiring forming process for forming a through-hole wiring by a plating method after the photolithography process, and a portion other than the heat dissipation portion of the metal plate after the through-hole wiring forming process A method for manufacturing a light emitting device, comprising: a polishing step for polishing and removing a metal film; and a metal film forming step for forming a metal film constituting each of the conductor pattern and the external connection electrode after the polishing step.   3. The method for manufacturing a light-emitting device according to claim 2, wherein, as a pre-stage of a bonding step for bonding the base substrate on which the light-emitting element is mounted and the intermediate layer substrate, in the formation of the base substrate, a portion serving as a heat radiating portion is one. 1st photosensitive resin which forms the 1st photosensitive resin layer by apply | coating the photosensitive resin composition used as the foundation of a 1st insulating structure to the said one surface side of the metal plate protrudingly provided by the surface side 1st photolithography which forms a through-hole in the formation area of a through-hole wiring by exposing and developing the 1st photosensitive resin layer after a layer formation process and a 1st photosensitive resin layer formation process A step of forming a through-hole wiring by plating after the first photolithography step, and a step of polishing and removing portions other than the heat radiation portion of the metal plate after the through-hole wiring forming step Process and conductor pattern after polishing process A metal film forming step of forming a metal film constituting each of the external connection electrode and the external connection electrode. In forming the intermediate layer substrate, the first surface side of the silicon substrate on which the photodetection element is formed is formed on the one surface side. A second photosensitive resin layer forming step of forming a second photosensitive resin layer by applying a photosensitive resin composition serving as a basis of the insulating structure of 2, and after the second photosensitive resin layer forming step Polishing the silicon substrate from the other surface side to a desired thickness with the substrate polishing step, and forming the light extraction window by etching the portion where the light extraction window is to be formed in the silicon substrate after the substrate polishing step And a second photolithographic process in which the second photosensitive resin layer is exposed and developed to form an opening window and a through hole is formed in a region where the through hole wiring is to be formed. Process and A through-hole wiring forming step for forming a through-hole wiring by a plating method after the second photolithography step, and a metal film to be a conductor pattern electrically connected to the through-hole wiring after the through-hole wiring forming step And a metal film forming step for manufacturing the light emitting device.

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