JP2009200137A - 面発光半導体レーザ及び面発光半導体レーザアレイ - Google Patents
面発光半導体レーザ及び面発光半導体レーザアレイ Download PDFInfo
- Publication number
- JP2009200137A JP2009200137A JP2008038315A JP2008038315A JP2009200137A JP 2009200137 A JP2009200137 A JP 2009200137A JP 2008038315 A JP2008038315 A JP 2008038315A JP 2008038315 A JP2008038315 A JP 2008038315A JP 2009200137 A JP2009200137 A JP 2009200137A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- surface emitting
- emitting laser
- substrate
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
- H01S5/32366—(In)GaAs with small amount of N
Abstract
【解決手段】面発光レーザは、GaAs基板10上に形成した、半導体下部DBRミラー12、クラッド層14、n型コンタクト層16、活性層18、電流狭窄層20、p型クラッド層22、p型コンタクト層24、位相調整層36、及び、誘電体上部DBRミラー28から成る積層構造を有する。前記電流狭窄層20の開口径X(μm)及び前記位相調整層の径Y(μm)は、X+1.9λ≦Y≦X+5.0λ (λ;面発光レーザの発振波長(μm))という関係を満たすように形成する。
【選択図】図1
Description
前記電流狭窄層の開口径X(μm)及び前記位相調整層の径Y(μm)は、
X+1.9λ≦Y≦X+5.0λ (λ;面発光レーザの発振波長(μm))
という関係を満たしていることを特徴とする面発光半導体レーザを提供する。
X+1.9λ≦Y≦X+5.0λ (λ;面発光レーザの発振波長(μm))
という関係を有すると、良好なレーザ特性を与えることが確かめられた。
さらに、詳細には以下の構造を有することが好ましいことも確認した。
10〜60nmが好ましい。これは、製造効率の観点からは実用的な酸化レートを得るために10nm以上であることが望ましく、且つ、シングルモード性の観点からは60nm以下が好ましいためである。
発振レーザ光の定在波の節に位置させることが最適である。しかし、下部多層膜反射鏡と上部多層膜反射鏡とを有する光共振器の平均屈折率をN、発振波長をλとした場合に、±(1/5)×λ/(4N)程度は、積層方向にずれていてもよい。このずれの許容量は、例えば、波長1300nmのVCSELでは、酸化狭窄層の厚さを約20nmとした場合、±20nmに相当する。
(イ)波長1000nm帯の面発光レーザでは、3.5〜7.0μmが好ましい。更に、シングルモード性の観点から、3.5〜5.0μmが好ましい。
(ロ)波長1300nm帯の面発光レーザでは、4.5〜9.0μmが好ましい。更に、シングルモード性の観点からは、4.5〜6.5μmが最も好ましい。
(ハ)波長1550nm帯の面発光レーザでは、5.5〜11.0μmが好ましい。更に、シングルモード性の観点からは、5.5〜8.0μmが好ましい。
10:GaAs基板
12:下部DBRミラー
14:クラッド層
16:n型コンタクト層(下部コンタクト層)
18:活性層
20:電流狭窄層(酸化狭窄層)
20a:電流開口部(Al0.98Ga0.02As)
20b:酸化領域(Al酸化層)
22:p型クラッド層
24:p型コンタクト層
26:p側電極
28:上部DBRミラー
30:p側引出電極
32:n側電極
34:n側引出電極
36:位相調整層
42:メサポスト
Claims (6)
- 基板上に、下部DBRミラー、下部クラッド層、活性層、上部クラッド層、電流狭窄層、位相調整層、及び、上部DBRミラーを含む積層構造を堆積して成る面発光レーザにおいて、
前記電流狭窄層の開口径X(μm)及び前記位相調整層の径Y(μm)は、
X+1.9λ≦Y≦X+5.0λ (λ;面発光レーザの発振波長(μm))
という関係を満たしていることを特徴とする面発光半導体レーザ。 - 前記基板がGaAs基板であり、前記活性層が、GaInNAs、GaInNAsSb、GaAsSb、及び、InGaAsから成る群から選択される半導体から成る量子井戸層と、障壁層とを含む量子井戸構造を有する、請求項1に記載の面発光半導体レーザ。
- 前記基板がInP基板であり、前記活性層が、GaInAsP、AlGaInAs、及び、GaInNAsSbから成る群から選択される半導体から成る量子井戸層と、障壁層とを含む量子井戸構造を有する、請求項1に記載の面発光半導体レーザ。
- 前記基板がGaAs又はInP基板であり、前記活性層が、InAs、InGaAs又はGaInNAsから成る量子ドット層を有する、請求項1に記載の面発光半導体レーザ。
- 少なくとも前記上部DBRミラーの最上部を含む層が誘電体多層膜から成る、請求項1〜4の何れか一に記載の面発光半導体レーザ。
- 請求項1〜5の何れか一に記載の面発光半導体レーザを1次元又は2次元アレイ状に配列して成ることを特徴とする面発光半導体レーザアレイ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008038315A JP5100434B2 (ja) | 2008-02-20 | 2008-02-20 | 面発光半導体レーザ及び面発光半導体レーザアレイ |
US12/388,057 US7907653B2 (en) | 2008-02-20 | 2009-02-18 | Vertical cavity surface emitting laser device and vertical cavity surface emitting laser array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008038315A JP5100434B2 (ja) | 2008-02-20 | 2008-02-20 | 面発光半導体レーザ及び面発光半導体レーザアレイ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009200137A true JP2009200137A (ja) | 2009-09-03 |
JP5100434B2 JP5100434B2 (ja) | 2012-12-19 |
Family
ID=41143360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008038315A Active JP5100434B2 (ja) | 2008-02-20 | 2008-02-20 | 面発光半導体レーザ及び面発光半導体レーザアレイ |
Country Status (2)
Country | Link |
---|---|
US (1) | US7907653B2 (ja) |
JP (1) | JP5100434B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014086642A (ja) * | 2012-10-25 | 2014-05-12 | Furukawa Electric Co Ltd:The | 光モジュール |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110313407A1 (en) * | 2010-06-18 | 2011-12-22 | Rafailov Edik U | Quantum-dot laser diode |
WO2012172606A1 (ja) * | 2011-06-16 | 2012-12-20 | 古河電気工業株式会社 | 半導体レーザ、面発光半導体レーザ、半導体レーザモジュール、および、非線形光学素子 |
JP2014060384A (ja) * | 2012-08-23 | 2014-04-03 | Canon Inc | 面発光レーザー、光源装置、光源装置の駆動方法及び光干渉断層撮像装置 |
US9285540B2 (en) * | 2012-09-21 | 2016-03-15 | The Regents Of The University Of California | Integrated dielectric waveguide and semiconductor layer and method therefor |
WO2020014561A1 (en) * | 2018-07-13 | 2020-01-16 | The Government of the United State of America, as represented by the Secretary of the Navy | Highly stable semiconductor lasers and sensors for iii-v and silicon photonic integrated circuits |
JP7169480B1 (ja) | 2022-06-24 | 2022-11-10 | 株式会社オーク製作所 | 露光装置用露光ヘッドおよび露光装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11243257A (ja) * | 1997-12-23 | 1999-09-07 | Lucent Technol Inc | 個々の光学および電流ガイドを持つ垂直空胴表面発光レーザ |
JP2004063657A (ja) * | 2002-07-26 | 2004-02-26 | Ricoh Co Ltd | 面発光レーザおよび面発光レーザアレイおよび光送信モジュールおよび光送受信モジュールおよび光通信システム |
JP2007129165A (ja) * | 2005-11-07 | 2007-05-24 | Toshiba Corp | 面発光型半導体素子とその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5594751A (en) * | 1995-06-26 | 1997-01-14 | Optical Concepts, Inc. | Current-apertured vertical cavity laser |
US6597713B2 (en) * | 1998-07-22 | 2003-07-22 | Canon Kabushiki Kaisha | Apparatus with an optical functional device having a special wiring electrode and method for fabricating the same |
US6618414B1 (en) * | 2002-03-25 | 2003-09-09 | Optical Communication Products, Inc. | Hybrid vertical cavity laser with buried interface |
US7256417B2 (en) * | 2004-02-05 | 2007-08-14 | Wisconsin Alumni Research Foundation | Type II quantum well mid-infrared optoelectronic devices |
-
2008
- 2008-02-20 JP JP2008038315A patent/JP5100434B2/ja active Active
-
2009
- 2009-02-18 US US12/388,057 patent/US7907653B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11243257A (ja) * | 1997-12-23 | 1999-09-07 | Lucent Technol Inc | 個々の光学および電流ガイドを持つ垂直空胴表面発光レーザ |
JP2004063657A (ja) * | 2002-07-26 | 2004-02-26 | Ricoh Co Ltd | 面発光レーザおよび面発光レーザアレイおよび光送信モジュールおよび光送受信モジュールおよび光通信システム |
JP2007129165A (ja) * | 2005-11-07 | 2007-05-24 | Toshiba Corp | 面発光型半導体素子とその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014086642A (ja) * | 2012-10-25 | 2014-05-12 | Furukawa Electric Co Ltd:The | 光モジュール |
Also Published As
Publication number | Publication date |
---|---|
US20090304036A1 (en) | 2009-12-10 |
US7907653B2 (en) | 2011-03-15 |
JP5100434B2 (ja) | 2012-12-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5388666B2 (ja) | 面発光レーザ | |
US7965755B2 (en) | Surface-emitting laser | |
JP5027010B2 (ja) | 面発光レーザ素子 | |
JP6102525B2 (ja) | 面発光レーザ素子及び原子発振器 | |
JP5100434B2 (ja) | 面発光半導体レーザ及び面発光半導体レーザアレイ | |
JP5029254B2 (ja) | 面発光レーザ | |
JP4728656B2 (ja) | 面発光レーザ素子 | |
JPWO2005071808A1 (ja) | 面発光レーザ | |
JP2003133640A (ja) | 面発光半導体レーザ素子 | |
JP2015177000A (ja) | 面発光レーザ、面発光レーザ素子及び原子発振器 | |
JP4069383B2 (ja) | 表面発光型半導体レーザおよびその製造方法 | |
US8228964B2 (en) | Surface emitting laser, surface emitting laser array, and image formation apparatus | |
JP4437913B2 (ja) | 表面発光型半導体レーザ素子およびその製造方法 | |
JP4614040B2 (ja) | 面発光型半導体レーザおよびその製造方法 | |
JP4748645B2 (ja) | 発光システムおよび光伝送システム | |
JP5023595B2 (ja) | 面発光レーザ素子 | |
JP5954469B1 (ja) | 面発光型半導体レーザ、面発光型半導体レーザアレイ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 | |
JP5006242B2 (ja) | 面発光半導体レーザ素子 | |
JP2009188238A (ja) | 面発光レーザ及びその製造方法 | |
JP2009094317A (ja) | 面発光レーザ | |
Unold et al. | Large-area single-mode selectively oxidized VCSELs: Approaches and experimental | |
JP2006019679A (ja) | 発光装置および光伝送システムおよび垂直共振器型面発光半導体レーザ素子 | |
JP2010045249A (ja) | 半導体発光素子およびその製造方法 | |
JP5074800B2 (ja) | 面発光レーザ素子および面発光レーザ素子の製造方法 | |
JP2011155143A (ja) | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD05 | Notification of revocation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7425 Effective date: 20100409 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20100419 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101101 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111228 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120116 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120315 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120831 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120925 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151005 Year of fee payment: 3 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5100434 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151005 Year of fee payment: 3 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |