JP2009182015A - Manufacturing method of circuit board and electronic element, and circuit board - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a circuit board whereby an insulating film can be surely formed, even if there are disconnected spots in wiring, and to provide a manufacturing method of an electronic element whereby the electronic element is formed on the circuit board, and the circuit board. <P>SOLUTION: This circuit board 10 is equipped with a board 11, a plurality of wiring 12, a plurality of compensation wiring s13 to connect between a plurality of the wiring 12, and a power supply connecting part 14, to which a dc power supply is connected, when anodizing is carried out. A plurality of the wiring 12 are equipped with wiring conductor parts 12a formed by a valve metal, wiring insulating films 12b formed by anodizing the surface of the valve metal, respectively. A plurality of the compensation wiring 13 are equipped with compensation wiring conductor parts 13a, formed in regions between pixel regions 15 adjacent to each other and forme by the valve metal, and compensation wiring insulating films 13b formed by anodizing the surface of the valve metal, respectively. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a circuit board in which an insulating film is formed on a plurality of wirings, a method for manufacturing the circuit board, and a method for manufacturing an electronic element for forming an electronic element thereon.

  In recent years, the enlargement, high definition, and thinning of displays have rapidly progressed, and various thin displays have been developed. In these thin displays, a back plate in which thin film devices such as thin film transistors (TFTs) and thin film capacitors are integrated is used. In the future, the display will be made thinner and lighter, and a flexible substrate such as a plastic film will be used as the back plate.

  However, since the plastic film has low heat resistance as compared with a conventionally used substrate (for example, a glass substrate), there has been a problem that the conventional method for manufacturing a thin film device cannot be applied to a plastic film as it is. For example, an insulating film forming process required for manufacturing a thin film device is generally performed at 300 ° C. or higher by a conventional sputtering method or vapor deposition method, and thus cannot be applied to a plastic film.

In order to solve this problem, a manufacturing method is known in which an insulating film is formed using a technique called anodizing (see, for example, Patent Document 1). In the manufacturing method disclosed in Patent Document 1, a substrate on which a gate electrode is formed is immersed in an electrolytic solution, and a direct current power source is connected using the gate electrode as an anode and the counter electrode in the electrolytic solution as a cathode to perform electrolysis. Thus, an insulating film is formed on the gate electrode.
JP 2003-258260 A

  However, in the conventional manufacturing method shown in Patent Document 1, if there is a disconnection point in the wiring on the substrate from the position where the DC power supply is connected to the position where the gate electrode is formed, the region ahead of the disconnection point Since no electric charge is supplied from the DC power source, an insulating film is not formed on the gate electrode in that region.

  As a result, among the thin-film devices fabricated on the substrate in the process after the formation of the insulating film, there is no insulating film in the device in the corresponding area, so a defect occurs in which the electrodes are short-circuited, and this defect cannot be repaired. There was a problem that the entire substrate became defective. In particular, in the conventional manufacturing method, since the wiring becomes longer and more complicated as the screen becomes larger, the probability of disconnection increases and the substrate is likely to be defective.

  The present invention has been made in view of the above-described circumstances, and a method of manufacturing a circuit board capable of reliably forming an insulating film even when the wiring has a disconnection portion, and an electron forming an electronic element on the circuit board An object of the present invention is to provide an element manufacturing method and a circuit board.

  The method for manufacturing a circuit board according to the present invention includes a step of forming a plurality of wirings on a substrate, a step of forming an electrical connection means for electrically connecting predetermined locations of the plurality of wirings, It has a configuration including a step of electrically forming an insulating film on each of the plurality of wirings and a step of removing the electrical connection means.

  With this configuration, in the method of manufacturing a circuit board according to the present invention, the electrical connection means electrically connects the plurality of wirings in the step of forming the insulating film. Thus, the electric charge can be supplied prior to the disconnection portion, and the insulating film can be reliably formed.

  The method for manufacturing an electronic device of the present invention is a method for manufacturing an electronic device on the substrate, and includes a step of forming an electrode on the insulating film.

  With this configuration, the method for manufacturing an electronic device according to the present invention can form an electrode on an insulating film that is reliably formed. Therefore, the manufacturing yield when manufacturing an electronic device using this insulating film is improved. Can do.

  The circuit board of the present invention is a circuit board manufactured by a method for manufacturing a circuit board, and has a trace from which the electrical connection means has been removed.

With this configuration, the circuit board of the present invention includes an insulating film formed by supplying electric charges before the disconnection site even if the wiring has a disconnection site.
Therefore, the circuit board of the present invention can form an electronic element on an insulating film that is reliably formed, so that it is possible to improve the manufacturing yield when the electronic element is formed.

  The present invention provides a method for manufacturing a circuit board capable of reliably forming an insulating film even when the wiring has a broken portion, a method for manufacturing an electronic element for forming an electronic element on the circuit board, and a circuit board. It is something that can be done.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. An example in which the circuit board of the present invention is applied to a back plate of a display will be described. The pixels of this display are arranged in a matrix of 4 × 5.

  First, the configuration of an embodiment of a circuit board according to the present invention will be described. FIG. 1 is a conceptual diagram of a circuit board in the present embodiment and shows a configuration after anodizing treatment. FIG. 1 (a) is a conceptual plan view, and FIGS. 1 (b) and (c) are respectively diagrams. FIG. 2 is a conceptual cross-sectional view showing a cross-section AA and BB in FIG.

  As shown in FIG. 1, the circuit board 10 according to the present embodiment includes a substrate 11, a plurality of wirings 12, a plurality of compensation wirings 13 connecting the plurality of wirings 12, and an anodizing process. And a power supply connection portion 14 to which a DC power supply is connected.

  The substrate 11 is made of, for example, a plastic film having a thickness of about 100 μm to 200 μm, and has a pixel formation region 15 in which pixels are formed. The pixel formation region 15 has a size of about 100 μm to 1000 μm, for example, and a light emitting diode is formed in this region. The substrate 11 may be configured using a glass substrate, a silicon substrate, or the like instead of the plastic film.

  Each of the plurality of wirings 12 is formed by using, for example, a valve metal as a material, and a wiring conductor portion 12a made of the valve metal and a wiring insulating film formed by anodizing the surface of the valve metal 12b. Here, the wiring conductor portion 12a is formed with a thickness of about 100 nm to 200 nm, for example. Further, the wiring insulating film 12b is formed with a thickness of, for example, about 100 nm to 200 nm, and electrodes such as a thin film capacitor and a thin film transistor are formed on the wiring insulating film 12b.

  The plurality of compensation lines 13 are provided so as to connect between predetermined positions of the plurality of lines 12. In the present embodiment, the plurality of compensation wirings 13 are each formed in a region between adjacent pixel formation regions 15. Each of the plurality of compensation wires 13 constitutes an electrical connection unit according to the present invention.

  Further, the material of the plurality of compensation wires 13 is, for example, made of a valve metal as a material similarly to the plurality of wires 12, and the compensation wire conductor portion 13a made of the valve metal and the surface of the valve metal. And a compensation wiring insulating film 13b formed by anodizing the substrate. The compensation wiring conductor portion 13a is formed integrally with the wiring conductor portion 12a and is electrically connected to each other. The compensation wiring conductor portion 13a is removed in a step after the formation of the insulating film.

  The power supply connection unit 14 is connected to an anode of a DC power supply (not shown), and supplies charges from the DC power supply to the plurality of wirings 12.

  With the above configuration, in the circuit board 10 according to the present exemplary embodiment, even when a disconnection occurs in any specific part of the plurality of wirings 12, a path in which the charge supplied from the power supply connection unit 14 includes the compensation wiring 13. Thus, the anodic oxidation proceeds appropriately in any of the plurality of wirings 12, and the wiring insulating film 12b can be reliably formed. Therefore, by using the circuit board 10 in this embodiment, a thin film device including the wiring insulating film 12b can be formed on the plurality of wirings 12, and the manufacturing yield as a back substrate of the display can be improved. it can.

  Specifically, when the disconnection occurs in the C portion shown in FIG. 1, in the conventional device, the charge supplied from the power supply connection portion 14 does not reach the D portion, and the wiring between the C portion and the D portion Since no insulating film was formed on the thin film device 12, the thin film device related to the pixel formation regions 15 a and 15 b ahead of the C portion could not be formed. For example, when a thin film capacitor is formed using the wiring conductor portion 12a as one electrode, if the other electrode is formed without an insulating film, the two electrodes are short-circuited, resulting in a defect that cannot be repaired. End up.

  On the other hand, since the circuit board 10 according to the present embodiment has a configuration in which a plurality of compensation wirings 13 are provided, even when a disconnection occurs in the C part, the power supply connection part 14 is connected via a path including the compensation wiring 13. Can be supplied to the D portion, and the thin film device according to the pixel formation regions 15a and 15b can be formed.

  In addition, when there exists a disconnection location in the wiring 12, the thin film device formed in the area | region ahead of the disconnection location seeing from the power supply connection part 14 by repairing a disconnection location in the process after forming the wiring insulating film 12b. Can function normally.

  Next, the manufacturing method of the circuit board 10 in this Embodiment is demonstrated using FIG. In each cross-sectional view shown in FIG. 2, the number of wirings 12 is three. In addition, materials, dimensions, methods, and the like in the manufacturing method described below are examples, and the present invention is not limited to these.

  First, the metal thin film 21 is formed with a thickness of about 200 nm to 400 nm on a plastic film substrate 11 having a thickness of about 100 μm to 200 μm by sputtering at room temperature (FIG. 2A). As the material of the metal thin film 21, what is called a valve metal is preferably used, and aluminum, tantalum, niobium, titanium, hafnium, zirconium, zinc, tungsten, bismuth, antimony, and the like are preferable. Before the metal thin film 21 is formed, a step of depositing, for example, a silicon-based oxide film or nitride film on the substrate 11 may be provided in order to improve adhesion with the substrate 11.

  Next, a predetermined wiring pattern is formed by using a photolithography method and a dry etching method or a wet etching method (FIGS. 2B1 and 2B2). For example, when the dry etching method is used, the wiring pattern can be formed by using a reactive etching method using sulfur hexafluoride gas. Through this step, the wiring conductor portion 12 a and the compensation wiring conductor portion 13 a corresponding to the respective conductor portions of the wiring 12 and the compensation wiring 13 are formed on the substrate 11. In this step, the power supply connection portion 14 (see FIG. 1A) is also formed on the substrate 11.

Subsequently, anodization is performed at room temperature (FIG. 2C). Specifically, the power supply connection unit 14 is connected to the anode of the power supply 22, and the cathode plate 23 is connected to the cathode of the power supply 22. For example, platinum is preferably used as the cathode plate 23, and ammonium borate is preferably used as the electrolyte solution 24, for example, when tantalum is used for the metal thin film 21. The current density in the energization process is preferably about 1 mA / cm ² . After the insulating layer is formed with a predetermined thickness, for example, about 100 nm to 200 nm, the energization process is terminated. After the anodic oxidation, the substrate 11 is sufficiently washed with pure water and dried.

  By this anodizing treatment, a wiring insulating film 12b and a compensation wiring insulating film 13b are formed to cover the wiring conductor portion 12a and the compensation wiring conductor portion 13a, respectively. In the anodizing process, an insulating film with a more uniform film thickness can be formed by the self-aligning action in which the electric field concentrates on the thin part of the insulating film in the reaction process. A dense thin film with few pinholes and excellent pressure resistance can be obtained.

  Next, the electrical wiring is processed using a photolithography method and a dry etching method or a wet etching method (FIG. 2 (d1), (d2)), and the compensation wiring 13 is removed (FIG. 2 (e1), ( e2)). For example, when the dry etching method is used, the compensation wiring 13 can be removed using a reactive etching method using carbon tetrafluoride, for example. After the step of removing the compensation wiring 13, the wiring conductor portion 12 a and the wiring insulating film 12 b have traces from which the compensation wiring 13 has been removed. FIG. 2 (e2) shows an example in which the entire compensation wiring 13 is removed and the connection between the adjacent wiring conductor portions 12a is disconnected, but a part of one compensation wiring 13 is removed and adjacent. It is good also as a process of cutting off connection between wiring conductor parts 12a.

  Next, specific examples in the present embodiment will be described. In addition, the material, the manufacturing method, etc. which were described below are examples, and this invention is not limited to these.

(First embodiment)
First, an embodiment in which a thin film capacitor and a thin film transistor are formed on a circuit board 10 as a thin film device on the circuit board 10 will be described with reference to FIG.

  As shown in FIG. 3A, the thin film capacitor 30 includes a wiring conductor portion 12a as one electrode and a counter electrode 31 facing the wiring conductor portion 12a with a wiring insulating film 12b as a dielectric interposed therebetween. . The size of the facing surface of the counter electrode 31 is preferably about 5 μm to 100 μm square. The counter electrode 31 preferably has a laminated structure of an ultrathin film (thickness of about 1 nm to 5 nm) such as chromium or titanium and gold (thickness of about 50 nm to 100 nm).

  In this configuration, after the compensation wiring 13 is removed after the anodic oxidation, the counter electrode 31 is connected as desired with a new wiring, whereby the parallel plate type thin film capacitors 30 are easily formed in a matrix on the circuit board 10. be able to. The thin film capacitor 30 can be used as, for example, a capacitor for an integrated circuit formed on a plastic film.

  As shown in FIG. 3B, the thin film transistor 40 includes a source electrode 41 and a drain electrode 42 formed on the wiring insulating film 12b, and an organic semiconductor 43, with the wiring conductor portion 12a as a gate electrode. Yes. The distance between the source electrode 41 and the drain electrode 42 is preferably about 1 μm to 10 μm. The source electrode 41 and the drain electrode 42 preferably have a width of about 5 μm to 10 μm and a length of about 10 μm to 500 μm, respectively. Each of the source electrode 41 and the drain electrode 42 preferably has a laminated structure of an ultrathin film (film thickness of about 1 nm to 5 nm) and gold (film thickness of about 50 nm to 100 nm) such as chromium and titanium. The organic semiconductor 43 can be formed, for example, by forming a film of pentacene, and the film thickness is preferably about 50 nm to 100 nm.

  In this configuration, the field effect thin film transistor 40 can be easily formed on the circuit board 10 after the compensation wiring 13 is removed after the anodic oxidation. Further, the organic thin film transistor array can be formed in a matrix by connecting the source electrode 41 and the drain electrode 42 as desired with new wirings. This organic thin film transistor array can be used as a driving element for a thin display formed on a plastic film, for example.

(Second embodiment)
Next, an embodiment in which the thin film capacitor 30 and the thin film transistor 40 described above are formed on the substrate 11 and configured as an organic EL (electroluminescence) display will be described with reference to FIG. FIG. 4A is a conceptual plan view of the circuit board 20 in the present embodiment and shows a configuration after anodizing treatment, and FIG. 4B is a diagram of the E portion shown in FIG. It is an expansion conceptual diagram. In FIG. 4, the same components as those in FIGS. 1 and 3 are denoted by the same reference numerals.

  The circuit board 20 in the present embodiment includes one thin film capacitor 30 and two thin film transistors 40a and 40b for each pixel formation region 15. Hereinafter, an outline of the manufacturing method will be described.

  First, as shown in FIG. 4A, a thin film capacitor signal line (hereinafter referred to as “TFC signal line”) 16 and a thin film transistor signal line (hereinafter referred to as “TFT signal line”) 17 are provided on the substrate 11. . In addition, a power connection portion 14 to which a direct current power source is connected when anodizing is performed is also formed on the substrate 11.

  Here, the TFC signal line 16 includes a pattern 16a in which one electrode of the thin film capacitor 30 (corresponding to reference numeral 12a in FIG. 3A) is formed. The TFT signal line 17 includes patterns 17a and 17b in which the gate electrodes (corresponding to reference numeral 12a in FIG. 3B) of the thin film transistors 40a and 40b are formed, respectively. The TFC signal line 16 and the TFT signal line 17 are connected by a compensation wiring 13. The TFC signal line 16 and the TFT signal line 17 correspond to the wiring 12 in FIG.

  Next, a power supply (not shown) is connected to the power supply connecting portion 14 to perform anodizing treatment of the circuit board 20 to form an insulating film on each signal line and each pattern.

  Next, as shown in FIG. 4B, the TFC signal line 16 and the TFT signal line 17 are divided at the portion of the compensation wiring 13 marked with “×”. Further, the pattern 17b in which the gate electrode of the thin film transistor 40b is formed and the TFT signal line 17 are divided at a dividing portion 17c indicated by “x”. In addition, the conductor part which existed in the part 17c position before parting comprises the electrical connection means which concerns on this invention. In other words, the electrical connecting means according to the present invention is not limited to connecting the wirings formed in a linear shape, but an electrode forming conductor portion (for example, pattern 17b) on which an electrode of an electronic element is formed. Examples include those that connect linear wiring (for example, the TFT signal line 17), those that connect the electrode forming conductors, and those that connect the conductors where no electrode is formed.

  Subsequently, after forming a pixel electrode for the light emitting element in the pixel forming region 15, a thin film device and each signal line are formed. Specifically, the upper electrode of the thin film capacitor 30 is formed on the pattern 16a (see FIG. 3A). Thin film transistors 40a and 40b are formed on the patterns 17a and 17b, respectively (see FIG. 3B). Here, the source electrode (corresponding to the reference numeral 41 in FIG. 3B) of the thin film transistor 40a can be simultaneously manufactured in combination with the formation of the pixel data line 18 for transmitting data to each pixel. The drain electrode of the thin film transistor 40a (corresponding to reference numeral 42 in FIG. 3B) is connected to the power supply line 19.

  As described above, according to the circuit board 10 in the present embodiment, since the plurality of compensation wirings 13 that connect the plurality of wirings 12 are provided, a disconnection occurs at a specific portion of the wiring 12. However, since the charge supplied from the power supply connection portion 14 is supplied before the disconnection portion via the path including the compensation wiring 13, the wiring insulating film 12 b can be reliably formed on the plurality of wirings 12.

  Therefore, the circuit board 10 in the present embodiment can form a thin film device including the wiring insulating film 12b on the plurality of wirings 12, and improves the manufacturing yield when applied as a back substrate of a display, for example. be able to. This manufacturing yield improves as the number of the compensation wirings 13 increases and becomes a preferable configuration.

  In addition, according to the circuit board 10 in the present embodiment, since the insulating film is formed at room temperature using anodizing treatment, the insulating film is also applied to a flexible substrate such as a plastic film. It can be reliably formed.

  In the above-described embodiment, the configuration in which the wiring 12 and the compensation wiring 13 are integrally formed of a valve metal has been described as an example. However, the present invention is not limited to this. For example, the wiring 12 The same effect can be obtained by a configuration in which the compensation wiring 13 and the compensation wiring 13 are separately formed of different metals and electrically connected.

  As described above, the circuit board and the method for manufacturing an electronic element and the circuit board according to the present invention have an effect that an insulating film can be surely formed even when there is a disconnection portion in the wiring, and on the plastic film. It is useful as a back substrate of a thin display to be formed, an electronic element for an integrated circuit, a driving element for a display using an active matrix system, and the like.

1 is a conceptual diagram showing a configuration of a circuit board according to an embodiment of the present invention. (A) A conceptual plan view of a circuit board. (B) A schematic sectional view of a circuit board (cross section AA). ) The figure which shows the manufacturing process of the circuit board in one embodiment of this invention (a) The figure which shows the state which formed the metal thin film on the board | substrate (b1) The figure which shows the state which formed the predetermined wiring pattern on the board | substrate (cross section AA) (b2) A diagram showing a state in which a predetermined wiring pattern is formed on a substrate (cross section BB) (c) An explanatory diagram of anodizing treatment (d1) A diagram showing a state in which electrical wiring is processed by a dry etching method (cross section) (A2) (d2) A diagram showing a state where electrical wiring is processed by a dry etching method (cross section BB) (e1) A diagram showing a state where compensation wiring is removed (cross section AA) (e2) A diagram showing a state where compensation wiring is removed (Cross section BB) The conceptual diagram which shows the thin film device formed on the circuit board in 1st Example of one embodiment of this invention (a) The cross-sectional conceptual diagram which shows a thin film capacitor (b) The cross-sectional conceptual diagram which shows a thin-film transistor The figure which shows the thin film capacitor and thin film transistor which were formed on the circuit board in 2nd Example of one embodiment of this invention. (A) The plane conceptual diagram of a circuit board (b) The expansion conceptual diagram of the E section

Explanation of symbols

10, 20 Circuit board 11 Substrate 12 Wiring 12a Wiring conductor 12b Wiring insulation film 12c, 12d Wiring 13 Compensation wiring (electrical connection means)
13a Compensation wiring conductor part 13b Compensation wiring insulation film 13c, 13d Compensation wiring 14 Power supply connection part 15 (15a, 15b) Pixel formation region 16 TFC signal line 16a Pattern in which one electrode of thin film capacitor is formed 17 TFT signal line 17a, 17b Pattern in which gate electrode is formed 17c TFT signal line segmentation point 18 Pixel data line 19 Power supply line 21 Metal thin film 22 Power supply 23 Cathode plate 24 Electrolyte 30 Thin film capacitor 31 Counter electrode 40 Thin film transistor 41 Source electrode 42 Drain electrode 43 Organic semiconductor

Claims (3)

Forming a plurality of wirings on the substrate; forming an electrical connection means for electrically connecting predetermined portions of the plurality of wirings; and electrically connecting an insulating film to each of the plurality of wirings. Forming a circuit board and removing the electrical connection means. A method of manufacturing a circuit board, comprising: An electronic device manufacturing method for forming an electronic device on the substrate according to claim 1,
The manufacturing method of the electronic element characterized by including the process of forming an electrode on the said insulating film. A circuit board manufactured by the method for manufacturing a circuit board according to claim 1,
A circuit board having a trace from which the electrical connection means has been removed.

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