JP2009182012A - Method and apparatus of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus and method of manufacturing a semiconductor device capable of easily flattening lead-free solder and well soldering a terminal with an insulation circuit board. <P>SOLUTION: A flux is applied to the terminal 4, the flux is activated by a hot plate, and the terminal 4 is soaked in a lead-free solder reservoir to preliminarily solder the terminal 4. Thereafter, the terminal 4 is turned over and vibrated to flatten the surface of the lead-free solder 12, thereby the terminal 4 can be well soldered with the insulation circuit board. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus using lead-free solder.

FIG. 14 is a cross-sectional view of a main part of a conventional semiconductor device. The semiconductor device includes a copper base 21 as a heat sink, an insulating circuit board 80 fixed on the copper base 21, a semiconductor chip 35 fixed on the insulating circuit board 80, a resin case 1, and a resin case 1. A plurality of external lead terminals (hereinafter simply referred to as terminals 4) fixed to the frame 3 and bonding wires 38 connected to the semiconductor chip 35 are configured.
The insulated circuit board 80 includes a backside copper foil 23 that is a metal foil formed on the back side of the insulated substrate 24 and a circuit pattern 25 formed on the front side. The circuit pattern 25 includes a wiring pattern, an emitter copper foil 27 and a collector copper. It is composed of a foil 28. The back side copper foil 23 and the copper base 21 are fixed by lead solder 68. The collector copper foil 28 and the semiconductor chip 35 (IGBT or the like) are fixed with lead solder 68, and the collector copper foil 28 and the collector terminal 37 (terminal 4) are fixed with lead solder 71. An emitter electrode (not shown) of the semiconductor chip 35 and the emitter copper foil 27 are connected by a bonding wire 38. The emitter copper foil 27 and the emitter terminal 36 (terminal 4) are fixed with lead solder 71, and a wiring pattern and a terminal (not shown) are fixed with lead solder. A gate pad (not shown) of the semiconductor chip 35 and a wiring pattern are connected by a bonding wire.
15 to 21 are main part manufacturing process diagrams showing a conventional method of manufacturing a semiconductor device in the order of processes. The terminal 4 on the left side of the figure shows a signal terminal (gate terminal or the like), and the terminal 4 on the center and right side shows a main terminal (emitter terminal or collector terminal). Further, the reason why the height of the lower surface 6 of the terminal is different for each terminal is that the deformation of the resin case 1 due to thermal stress, production intersection, and the like are simulated.

The terminal 4 fixed to the resin case 1 is immersed in the flux tank 61 and the flux 62 is applied (FIG. 15).
Next, the terminal 4 coated with the flux 62 is immersed in a lead solder bath 63 to pre-solder the lead solder 64 to the terminal 4 (FIG. 16).
The temperature of the lead solder bath 63 is about 270 ° C., and the immersion time is about 15 seconds.
Next, the terminal 4 is taken out from the lead solder tank 63 (FIG. 17). At this time, as shown in the drawing, the lead solder 64 attached to the lower surface 6 of the terminal hangs downward due to gravity, and a ridge-like convex portion 65 is formed. When the ridge-like convex portion 65 is formed, the convex portion 65 of the lead solder 64 attached to the terminal 4 comes into contact with the insulating circuit board 80 and the copper base having the insulating circuit board 80 and the resin case 1 having the terminal 4 attached thereto. It becomes difficult to fix 21 with the adhesive 26. Further, when the ridge-like convex portion 65 is formed, the distance between the terminal 4 and the insulating circuit board 80 is widened, and the shape of the lead solder 64 sandwiched between the terminals 4 and the central portion becomes narrower and the fillet shape is deteriorated. The bonding strength with 64 is weakened and the reliability is lowered. In order to avoid these, the next step of flattening the convex portion 65 is necessary.
Next, in order to flatten the ridge-like convex portion 65, the lead solder 64 on the lower surface 6 of the terminal is pressed by the pressing jig 66 to flatten the lead solder 64 (FIG. 18). The temperature of the pressing jig 66 is room temperature, and the pressing pressure is a soft state in which the lead solder 64 is not yet solidified.

Next, after applying the cream lead solder 67 on the insulating circuit board 80 to a thickness of about several millimeters with a dispenser, the resin case 1 with the terminals 4 is aligned. At this time, the vicinity 5 (including the lower surface) of the lower end of the terminal is wrapped in the cream lead solder 67. After alignment, the outer frame 2 of the resin case 1 and the copper base 21 are fixed with an adhesive 26 (FIG. 19).
Next, the terminal 4 and the insulated circuit board 80 are soldered through the reflow furnace 69 while applying a predetermined pressure while the copper base 21, the insulated circuit board 80 and the resin case 1 are in contact with each other (FIG. 20). The temperature of the reflow furnace 69 is about 260 ° C.
Thereafter, for example, a gel 17 or the like, which is a sealing material, is injected into the resin case 1, and the lid 18 is completed to complete the semiconductor device (FIG. 21).
Further, in Patent Document 1, the main terminal and the signal terminal are accurately positioned at a predetermined position of the conductor pattern without using a special jig, and these terminals are surely in contact with the conductor pattern on the entire surface and inclined. A composite semiconductor device that is not soldered is described.
Japanese Patent Laid-Open No. 11-177017 (Claims 1, 4, paragraph 0024, FIG. 3)

However, as shown in FIG. 14, the conventional semiconductor device using the lead solders 68 and 71 has a problem of environmental pollution, and lead-free is being promoted. However, when lead-free solder is used, the following problems occur.
In the above-described conventional process, in the solder flattening shown in FIG. 18, the lead-free solder having a high melting point is immersed, and after the terminal 4 is moved to the pressing jig 66 for the flattening, the ridge-like convexity is formed. The part is solidified and cannot be flattened.
If flattening is not possible, excess solder attached to the terminal 4 flows out when passing through the reflow furnace 69, and circuit wiring is short-circuited, or good soldering between the terminal 4 and the insulating circuit board 80 (circuit pattern 25) is achieved. Impaired and decreases reliability.
Also, if the thickness (height) of the solder becomes too thick (too high), a reverse fillet (a shape in which the solder is narrowed at the center) can be formed, and the bonding strength at the interface between the terminal and the solder is lowered, resulting in reliability. Sex is reduced.
Further, if the height (thickness) of the solder is higher (thickness) than about several mm, the insulating case 1 and the copper base 21 cannot be fixed firmly with the adhesive 26, and the reliability is lowered.
SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus that can solve the above-described problems and facilitate the flattening of lead-free solder and can perform good soldering between a terminal and an insulated circuit board. It is to provide.

In order to achieve the above object, in the method of manufacturing a semiconductor device in which an external lead terminal fixed to a resin case and a bottom face of the external lead terminal are fixed to an insulating circuit board with lead-free solder, the bottom face of the external lead terminal A step of immersing the vicinity of the tip including the flux in a flux tank and applying the flux; and taking out the external lead terminal from the flux tank and applying the flux with a heater (for example, a hot plate or a thermostat) Heating the lead-out terminal and activating the flux; immersing the vicinity of the tip of the external lead-out terminal where the flux is applied in a lead-free solder bath and pre-soldering near the tip; The step of taking out the external lead-out terminal from the lead-free solder bath, and turning the resin case upside down so that the bottom surface of the external lead-out terminal faces upward A manufacturing method comprising a step of flattening the surface of the lead-free solder that is attached fat case the lower surface of the vertically is allowed by the externally leading terminals vibration to.
Also, in a method of manufacturing a semiconductor device in which an external lead terminal fixed to a resin case and a bottom surface of the external lead terminal are fixed to an insulated circuit board with lead-free solder, a flux near the tip including the bottom surface of the external lead terminal A step of applying a flux by immersing in a bath; and taking out the external lead terminal from the flux bath and heating the external lead terminal to which the flux has been applied with a heater (for example, a hot plate or a thermostatic bath). Activating the external lead terminal, immersing the vicinity of the tip of the external lead terminal coated with the flux in a lead-free solder bath, preliminarily soldering the lead part near the lead part, and connecting the external lead terminal to the lead A step of removing from the free solder bath and a plate having a smaller heat capacity than the hot plate placed on the hot plate at a predetermined temperature (for example, a metal plate or a carbon plate) A manufacturing method comprising a step of flattening the surface of 該鉛 free solder lead-free solder that is attached to the lower surface pressed at a predetermined pressure of the externally leading terminals.

Also, in a method of manufacturing a semiconductor device in which an external lead terminal fixed to a resin case and a bottom surface of the external lead terminal are fixed to an insulated circuit board with lead-free solder, a flux near the tip including the bottom surface of the external lead terminal A step of applying a flux by immersing in a bath; and taking out the external lead terminal from the flux bath and heating the external lead terminal to which the flux has been applied with a heater (for example, a hot plate or a thermostatic bath). Activating the external lead terminal, immersing the vicinity of the tip of the external lead terminal coated with the flux in a lead-free solder bath, preliminarily soldering the lead part near the lead part, and connecting the external lead terminal to the lead A step of taking out from the free solder bath, and the lead attached to the external lead-out terminal by turning the resin case upside down so that the bottom face of the external lead-out terminal faces upward By sweeping the free solder surface sweep plate and manufacturing method comprising a step of planarizing the lead-free solder surface.
Further, in a semiconductor device manufacturing apparatus in which an external lead terminal fixed to a resin case and the external lead terminal are fixed to an insulated circuit board with lead-free solder, a holding means for holding the resin case; The external lead-out terminal is moved into and out of the flux bath and the solder bath, and further transported to the next process, and the flux applied to the tip of the external lead-out terminal is heated to cause the flux to flow. The manufacturing apparatus includes activation means for activating and flattening means for flattening the surface of the lead-free solder attached to the lower surface of the external lead-out terminal.

The activation means may be a heating mechanism that is maintained at a predetermined temperature.
In addition, the flattening means reverses the top and bottom of the resin case and turns the lower surface of the external lead-out terminal upward, and the external via the resin case to flatten the surface of the lead-free solder A vibration mechanism that applies vibration to the lead-out terminal may be provided.
The flattening means includes a pressure mechanism that presses the surface of the lead-free solder attached to the lower surface of the external lead-out terminal against a metal plate, a heating mechanism that heats the metal plate, and the metal plate is attached to the resin case. And a desorption mechanism for desorption.
Further, the flattening means sweeps the surface of the lead-free solder attached to the lower surface of the external lead-out terminal and the reversing mechanism for turning the resin case upside down and directing the bottom surface of the external lead-out terminal upward. A sweeping mechanism may be provided.

According to the present invention, in assembling with lead-free solder, after flux is applied to the terminal, the flux is activated with a hot plate, and then the terminal is immersed in a lead-free solder bath to pre-solder the terminal. . Thereafter, the terminal is inverted upside down and vibrated, and the surface of the lead-free solder is flattened, whereby the terminal and the insulating circuit board can be satisfactorily soldered.
The planarization can also be performed by pressing lead-free solder attached to the lower surface of the terminal against a high-temperature metal plate having a small heat capacity.
Further, the planarization can also be performed by turning the terminal upside down and sweeping the surface of the lead-free solder attached to the lower surface of the terminal with the sweep plate with the lower surface of the terminal facing upward.
Further, the lead-free solder can be flattened by using a reversing mechanism for reversing the terminal with the lead-free solder and a manufacturing apparatus having a vibration mechanism for vibrating the terminal.
Moreover, the lead-free solder can be flattened using a high-temperature metal plate with a small heat capacity for pressing the lead-free solder and a manufacturing apparatus having a pressurizing mechanism.
Further, the lead-free solder can be flattened by using a manufacturing apparatus having a reversing mechanism for reversing the terminal with the lead-free solder and a sweeping mechanism for sweeping the surface of the solder attached to the terminal by brushing.

  Embodiments will be described in the following examples. In addition, the same code | symbol was attached | subjected to the site | part same as the site | part of a conventional structure.

1 to 8 are cross-sectional views of the main part manufacturing process showing the semiconductor device manufacturing method according to the first embodiment of the present invention in the order of steps.
The terminal 4 (external lead-out terminal) fixed to the resin case 1 is immersed in the flux tank 8 and the flux 9 is applied to the vicinity 5 (including the lower surface 6 of the terminal) (FIG. 1). The temperature of the flux tank 8 is normal temperature (about 25 ° C.), and the immersion time is about 2 seconds.
Next, the terminal 4 is taken out from the flux tank 8 and the terminal 4 coated with the flux 9 is heated by the hot plate 10 (FIG. 2). A heater such as a thermostatic bath may be used instead of the hot plate 10. The heating time is 4 minutes and the temperature of the terminal 4 is 90 ° C. or higher. By setting the temperature to 90 ° C. or higher, the applied flux 9 is activated, and an oxide film (not shown) covering the terminals 4 is effectively removed, so that a preliminary solder in a subsequent process can be made satisfactory.
Next, the terminal 4 coated with the flux 9 is immersed in a jet-type lead-free solder bath 11 (FIG. 3). The temperature of the lead-free solder bath 11 is about 280 ° C. and the immersion time is about 30 seconds.
Next, the terminal 4 is taken out from the lead solder tank 11 (FIG. 4). At this time, as shown in the figure, the lead-free solder 12 falls downward due to gravity, and a ridge-like convex portion 13 is formed.
Next, the terminal 4 is turned upside down (turned upside down) so that the lower surface 6 of the terminal is directed upward, and the terminal 4 is vibrated up and down to flatten the lead-free solder 12 (FIG. 5). This flattening operation may be performed by hitting the resin case 1 lightly on the fixed base 14 about 5 times and applying an impact. The height from the lower surface 6 of the flattened lead-free solder 12 is preferably about several μm to 250 μm. When higher than this, when the reflow furnace 27 of FIG. 7 is passed, the lead-free solders 12 and 15 between the terminal 4 and the circuit pattern 25 of the insulating circuit board 80 flow out from a predetermined position, and the terminal 4 and the insulating circuit board 80 is not good soldering.

Next, after the cream lead-free solder 15 is applied on the insulating circuit board 80 to a thickness of about several millimeters with a dispenser, the terminals 4 are formed on the insulating circuit board 80 fixed to the copper base 21 with the adhesive 21. The attached resin case 1 is aligned. At this time, the vicinity 5 of the lower end of the terminal 4 (including the lower surface 6) is wrapped in the cream lead-free solder 15. After the alignment, the outer peripheral frame 2 of the resin case 1 and the copper base 21 are fixed with an adhesive 26 (FIG. 6).
Next, the terminal 4 and the insulated circuit board 80 are soldered through the reflow furnace 27 while applying a predetermined pressure in a state where the copper base 21, the insulated circuit board 80 and the resin case 1 are in contact (FIG. 7). The temperature of the reflow furnace 27 is about 260 ° C.
Thereafter, for example, a gel 17 or the like, which is a sealing material, is injected into the resin case 1 and the lid 18 is attached to complete the semiconductor device using the lead-free solder 16 (FIG. 8).
The vibration condition for flattening in the step of FIG. 5 is vibration of about 5 times at a room temperature and a frequency of 1 Hz to several Hz. The reason why the terminal 4 is turned upside down is to prevent the lead-free solder 12 from forming the ridge-like convex portion 13 by the force of gravity. The reason for vibrating is to remove excess lead-free solder. Therefore, even if the resin case 1 is lightly collided with a hard base (support base 14) and the lead-free solder attached to the lower surface 6 (facing upward) of the terminal is shaken off by the shock, the surface becomes flat. can do.

9 to 11 are cross-sectional views showing a main part manufacturing process showing the semiconductor device manufacturing method according to the second embodiment of the present invention in the order of processes.
A metal plate 31 (or a carbon plate or the like) is laid on the hot plate 10 set at a temperature lower by about 5 ° C. than the temperature at which the lead-free solder 12 melts (210 ° C.), and the lead-free solder 12 is attached thereon. Put the solder surface of the lower surface 6 of the terminal in contact with the metal plate 31. The metal plate 31 is affixed with a Kapton tape (not shown) so that the solder does not easily adhere to it, and a fixing claw 32 having a spring function for fixing to the resin case 1 is attached to the side surface. The terminal 4 is pressed by a pressure device (not shown) to flatten the solder surface (FIG. 9).
Next, the terminal 4 is separated from the hot plate 10 together with the metal plate 31. Since the metal plate 31 has a smaller heat capacity than the hot plate 10, the temperature is quickly lowered, and the lead-free solder 12 in a semi-solidified state is quickly solidified in a flattened state (FIG. 10).
Next, the metal plate 31 is released from the resin case 1 by loosening the fixing claws 32 of the metal plate 31 (FIG. 11).
By adopting this process, since it is not necessary to reverse the resin case as in the first embodiment, the process is simplified and the manufacturing cost can be reduced.

FIG. 12 is a cross-sectional view showing the main part manufacturing process of the semiconductor device according to the third embodiment of the present invention. This step is a step of sweeping and flattening the solder surface with the brush 33 instead of flattening with the vibration of FIG.
The resin case 1 is turned upside down so that the lower surface 6 of the terminal 4 with the lead-free solder 12 faces upward. A groove 34 formed on the lower side surface of the resin case 1 (actually, a brush 33 as a sweep plate is driven by a sweep drive unit (not shown) along a groove 34 (not shown) formed at the front and depth of the drawing to lead-free solder 12 Sweep and flatten the surface.

FIG. 13 is a main part configuration diagram showing a semiconductor device manufacturing apparatus according to the fourth embodiment of the present invention.
This manufacturing apparatus is an apparatus for vibrating the terminals 4 up and down to flatten the lead-free solder 12 by vibrating the solder. This manufacturing apparatus includes a flux tank 8, a hot plate 10, a lead-free solder tank 11, an expansion / contraction / horizontal rotation support body 41 to 44 that moves the resin case 1 in the vertical direction and further in the horizontal direction, and a resin. Claws 51 to 55 that sandwich case 1, claw support 46 that connects claws 51 to 55 and expansion / contraction / horizontal rotating bodies 41 to 44, and resin case 1 are moved in the vertical direction and horizontal direction, and further in the vertical direction An expansion / contraction / horizontal rotation / vertical vibration support 45 that vibrates, and a vertical rotation support 47 that connects the claw 53 to the expansion / contraction / horizontal rotation / vertical vibration support 45 and inverts the resin case 1 are provided.
The operation of this apparatus will be described. First, the resin case 1 is fixed with the claws 51, the claw support body 46 fixing the claws 51 is contracted with the expansion / contraction / horizontal rotation support body 41 and moved downward, and the terminals of the resin case 1 are connected to the flux tank 8. It is immersed in the flux 9 for a predetermined time.
Next, the expansion / contraction / horizontal rotation support 41 is extended to move the resin case 1 upward, and the latter half of the rotation is performed to move the resin case 1 above the hot plate 10.
Next, the resin case 1 is sandwiched between the claw 52 fixed to the claw support 46 connected to the adjacent expansion / contraction / horizontal rotation support 42, and then the claw 51 is separated from the resin case 1.

Next, the claw support 46 is contracted by the expansion / contraction / horizontal rotation support 42 and moved downward, and the resin case 1 is placed in contact with the hot plate 10.
Next, after a predetermined time has passed, the expansion / contraction / horizontal rotation support 42 is extended to move the resin case 1 upward, and the latter half is rotated to move the resin case 1 to above the lead-free solder bath 11.
Next, the resin case 1 is sandwiched between the claw 53 fixed to the vertical rotation support 47 connected to the adjacent expansion / contraction / horizontal rotation / vibration support 45, and then the claw 52 is separated from the resin case 1.
Next, the vertical rotation support 47 is contracted by the expansion / contraction / horizontal rotation / vibration support 45 and moved downward, and the resin case 1 is immersed in the lead-free solder 12 of the lead-free solder bath 11.
After being immersed for a predetermined time, the expansion / contraction / horizontal rotation / vibration support 45 is extended to move the resin case upward.
Next, the resin case 1 is moved by horizontally rotating the expansion / contraction / horizontal rotation / vertical vibration support body 45 by half rotation, and the resin case 1 is reversed by rotating the vertical rotation support body 47 by half rotation.
Next, the expansion / contraction / horizontal rotation / vertical vibration support 47 is vibrated up and down to flatten the lead-free solder on the lower surface of the terminal 4.

Next, the vertical rotation support body 47 is rotated halfway so that the upper and lower sides of the resin case 1 are restored.
Next, the resin case 1 is sandwiched between the claw 54 fixed to the claw support 46 connected to the adjacent expansion / contraction / horizontal rotation support 43, and then the claw 53 is separated from the resin case 1.
Next, the expansion / contraction / horizontal rotation support body 43 is rotated halfway horizontally, the resin case 1 is moved above the support base 35, the expansion / contraction / horizontal rotation support body 43 is contracted and moved downward, and the insulating circuit board is fixed. The resin case 1 is aligned with the copper base 21 and fixed with an adhesive.
Next, the resin case 1 is sandwiched between the claw 55 fixed to the claw support 46 connected to the adjacent expansion / contraction / horizontal rotation support 44, and then the claw 54 is separated from the resin case 1.
Next, the resin case 1 fixed to the copper base 21 is moved upward by extending the expansion / contraction / horizontal rotation support body 44 and rotated horizontally, and the resin case 1 fixed to the copper base 21 is moved above the belt conveyor 28. .
Next, the expansion / contraction / horizontal rotation support 44 is contracted and moved below the resin case 1 fixed to the copper base 21 and placed on the belt conveyor 28.
Next, pressure is applied to the copper base 21 and the resin case 1 and the reflow furnace 27 is passed through. When leaving the reflow furnace 27, the terminal 1 and the insulated circuit board 80 are fixed with lead-free solder 12.

Next, the resin case 1 is filled with the gel 17 and covered with a lid 18 to complete a semiconductor device using the lead-free solder 16.
The relationship between the terms explained in the section for solving the above-mentioned problems and the terms in the fourth embodiment will be explained.
Specifically, the holding means is, for example, the claws 51 to 55, and the activating means is a heating mechanism such as the hot plate 10.
Specifically, the conveying means includes, for example, expansion / contraction / horizontal rotation supports 41 to 44, a claw support 46, an expansion / contraction / horizontal rotation / vertical vibration support 45, a vertical rotation support 47, and the like. More specifically, the resin case 1 is vertically transported by the expansion / contraction portions of the supports 41 to 44, 45, and the resin case 1 is horizontally transported by the horizontal rotating portions of the supports 41 to 44, 45, the support 46, and the support 47. This is done in combination.
The flattening means is a reversing mechanism and a vibrating mechanism in the case of vibration. Specifically, for example, the reversing mechanism is a vertical rotation support 47 that reverses the resin case 1. The vibration mechanism is a vibration part of the expansion / contraction / horizontal rotation / vertical vibration support 45 and applies vibration to the resin case 1.
The flattening means is a pressure mechanism and a desorption mechanism in the case of pressure. Specifically, for example, the pressurizing mechanism is a mechanism in which the expansion / contraction / horizontal rotation support bodies 41 to 44 and the expansion / contraction / horizontal rotation / vertical vibration support body 45 are provided with a pressurizing unit. The desorption mechanism is a fixed claw 32 attached to the metal plate 31.

  Further, the flattening means is a reversing mechanism and a sweeping mechanism in the case of sweeping. Specifically, for example, the reversing mechanism is a vertical rotation support 47 that reverses the resin case 1. The sweep mechanism is a brush 33 that is a sweep plate and a sweep drive unit.

Sectional view of manufacturing process of main part of semiconductor device according to first embodiment of this invention. 1 is a cross-sectional view of the main part manufacturing process of the semiconductor device according to the first embodiment of the present invention, continued from FIG. FIG. 2 is a cross-sectional view of the main part manufacturing process of the semiconductor device according to the first embodiment of the present invention continued from FIG. FIG. 3 is a cross-sectional view of the main part manufacturing process of the semiconductor device according to the first embodiment of the present invention continued from FIG. FIG. 4 is a cross-sectional view of the main part manufacturing process of the semiconductor device according to the first embodiment of the present invention continued from FIG. FIG. 5 is a cross-sectional view of the main part manufacturing process of the semiconductor device according to the first embodiment of the present invention continued from FIG. FIG. 6 is a cross-sectional view of the main part manufacturing process of the semiconductor device according to the first embodiment of the present invention continued from FIG. FIG. 7 is a cross-sectional view of the main part manufacturing process of the semiconductor device according to the first embodiment of the present invention continued from FIG. Sectional view of manufacturing process of main part of semiconductor device according to second embodiment of this invention. FIG. 9 is a cross-sectional view of the main part manufacturing process of the semiconductor device according to the second embodiment of the present invention continued from FIG. FIG. 10 is a cross-sectional view of the main part manufacturing process of the semiconductor device according to the second embodiment of the present invention continued from FIG. Sectional view of manufacturing process of main part of semiconductor device according to third embodiment of this invention. The principal part block diagram which shows the manufacturing apparatus of the semiconductor device of 4th Example of this invention. Sectional view of the main part of a conventional semiconductor device Main part manufacturing process diagram of conventional semiconductor device manufacturing method FIG. 15 is a main part manufacturing process diagram of the conventional method for manufacturing a semiconductor device. FIG. 16 is a main part manufacturing process diagram of the conventional method for manufacturing a semiconductor device. FIG. 17 is a main part manufacturing process diagram of the conventional method for manufacturing a semiconductor device. FIG. 18 is a main part manufacturing process diagram of the conventional semiconductor device manufacturing method following FIG. FIG. 19 is a main part manufacturing process diagram of the conventional method for manufacturing a semiconductor device. Main part manufacturing process diagram of conventional semiconductor device manufacturing method continued from FIG.

Explanation of symbols

1 Resin case 2 Outer frame 3 Inner frame 4 Terminal (external lead-out terminal)
5 Near tip 6 Bottom surface of terminal 7 Head of terminal 8 Flux bath 9 Flux 10 Hot plate 11 Lead-free solder bath (jet type)
DESCRIPTION OF SYMBOLS 12 Lead-free solder 13 Glitter-shaped convex part 14 Fixing base 15 Cream lead-free solder 16 Lead-free solder 17 Gel 18 Lid 21 Copper base 22 Lead-free solder 23 Back surface copper foil 24 Insulating substrate 25 Circuit pattern 26 Adhesive 27 Reflow furnace 28 Belt conveyor 31 Metal plate 32 Fixed claw 33 Brush 34 Groove 35 Support base 41-44 Expansion / contraction / horizontal rotation support 45 Expansion / contraction / horizontal rotation / vibration support 46 Claw support 47 Vertical rotation support 51-55 Claw 80 Insulation circuit substrate

Claims (8)

In a manufacturing method of a semiconductor device in which an external lead terminal fixed to a resin case and a lower surface of the external lead terminal are fixed to an insulating circuit board with lead-free solder,
Applying the flux by immersing the vicinity of the tip including the lower surface of the external lead-out terminal in a flux tank;
Removing the external lead terminal from the flux tank and heating the external lead terminal coated with the flux with a heater to activate the flux;
A step of pre-soldering the vicinity of the tip by immersing the vicinity of the tip to which the flux of the external lead-out terminal is applied in a lead-free solder bath;
Removing the external lead-out terminal from the lead-free solder bath;
Inverting the resin case up and down to make the lower surface of the external lead-out terminal upward and vibrating the resin case in the vertical direction to flatten the surface of the lead-free solder attached to the lower surface of the external lead-out terminal;
A method for manufacturing a semiconductor device, comprising: In a manufacturing method of a semiconductor device in which an external lead terminal fixed to a resin case and a lower surface of the external lead terminal are fixed to an insulating circuit board with lead-free solder,
Applying the flux by immersing the vicinity of the tip including the lower surface of the external lead-out terminal in a flux tank;
Removing the external lead terminal from the flux tank and heating the external lead terminal coated with the flux with a heater to activate the flux;
A step of pre-soldering the vicinity of the tip by immersing the vicinity of the tip to which the flux of the external lead-out terminal is applied in a lead-free solder bath;
Removing the external lead-out terminal from the lead-free solder bath;
The surface of the lead-free solder is flattened by pressing the lead-free solder on the lower surface of the external lead-out terminal with a predetermined pressure on a plate having a smaller heat capacity than the hot plate disposed on the hot plate at a predetermined temperature. Process,
A method for manufacturing a semiconductor device, comprising: In a manufacturing method of a semiconductor device in which an external lead terminal fixed to a resin case and a lower surface of the external lead terminal are fixed to an insulating circuit board with lead-free solder,
Applying the flux by immersing the vicinity of the tip including the lower surface of the external lead-out terminal in a flux tank;
Removing the external lead terminal from the flux tank and heating the external lead terminal coated with the flux with a heater to activate the flux;
A step of pre-soldering the vicinity of the tip by immersing the vicinity of the tip to which the flux of the external lead-out terminal is applied in a lead-free solder bath;
Removing the external lead-out terminal from the lead-free solder bath;
The resin case is turned upside down and the lower surface of the external lead-out terminal is directed upward, the surface of the lead-free solder attached to the external lead-out terminal is swept with a sweep plate, and the surface of the lead-free solder is flattened;
A method for manufacturing a semiconductor device, comprising: In a semiconductor device manufacturing apparatus in which an external lead terminal fixed to a resin case and the external lead terminal are fixed to an insulated circuit board with lead-free solder,
Holding means for holding the resin case;
Transport means for moving the resin case up and down and moving the external lead-out terminal in and out of the flux bath and solder bath, and further moving to the next step;
Activating means for activating the flux by heating the flux applied to the tip of the external lead-out terminal;
Flattening means for flattening the surface of the lead-free solder attached to the lower surface of the external lead-out terminal;
An apparatus for manufacturing a semiconductor device, comprising: 5. The semiconductor device manufacturing apparatus according to claim 4, wherein the activating means is a heating mechanism maintained at a predetermined temperature. A reversing mechanism in which the flattening means reverses the top and bottom of the resin case and directs the lower surface of the external lead-out terminal upward; and the external lead-out terminal through the resin case to flatten the surface of the lead-free solder The apparatus for manufacturing a semiconductor device according to claim 4, further comprising a vibration mechanism that applies vibration to the semiconductor device. The flattening means pressurizes the lead-free solder surface attached to the lower surface of the external lead terminal against the metal plate, a heating mechanism for heating the metal plate, and the metal plate is attached to and detached from the resin case. The apparatus for manufacturing a semiconductor device according to claim 4, further comprising: a detaching mechanism that performs the same. An inversion mechanism in which the flattening means inverts the upper and lower sides of the resin case so that the lower surface of the external lead-out terminal faces upward, and a sweep mechanism in which the surface of the lead-free solder attached to the bottom surface of the external lead-out terminal is swept with a sweep plate The apparatus for manufacturing a semiconductor device according to claim 4, comprising:

Images