JP2009177141A - Method of manufacturing semiconductor light-emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting device including a Pd electrode, which prevents, in a simple manner, yield deterioration resulting from sticking of the Pd electrode on a detached insulating film onto the surface of the semiconductor light-emitting device, or the occurrence of portions where pad electrodes are not formed, and avoid a contact of a p-type contact layer with the pad electrode. <P>SOLUTION: The method includes the steps of forming an insulating film having an opening on a semiconductor, forming a Pd electrode in the opening and on the insulating film, and detaching and removing the Pd electrode on the insulating film by applying a physical force to the Pd electrode on the insulating film while leaving the Pd electrode in the opening. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor light emitting device using a Pd electrode as an electrode.

  The p-type semiconductor layer formed on the active layer in the semiconductor light emitting device is connected in part to a p-type electrode for supplying power to the p-type semiconductor layer. Of the p-type semiconductor layer, the portion connected to the aforementioned p-type electrode is called a p-type contact layer. From the viewpoint of improving characteristics such as a reduction in current consumption, the p-type electrode is required to have improved ohmic characteristics and be brought into low resistance contact with the p-type contact layer.

  Here, for example, in a nitride semiconductor light emitting device used in a blue-violet LD, Pd (or a material containing Pd) may be used as a p-type electrode material in order to satisfy the above-described requirements. The Pd electrode is formed on at least the p-type contact layer. However, in order to provide a process margin, the Pd electrode is generally formed also on the insulating film. Accordingly, the Pd electrode includes a portion formed on the p-type contact layer (referred to as a Pd electrode on contact) and a portion formed on the insulating film (referred to as a Pd electrode on insulating film). After the Pd electrode is formed, a pad electrode is formed on the Pd electrode.

JP 60-43830 A JP 2005-93673 A Japanese Patent Laid-Open No. 2003-10078 JP 2002-205268 A Japanese Patent Laid-Open No. 10-74710 JP-A-5-152248 Japanese Patent Laid-Open No. 1-116070 JP 2006-351617 A JP 2006-245379 A

  However, since the adhesion between the Pd electrode and the insulating film is poor, the Pd electrode on the insulating film may be peeled off. A part of the Pd electrode on the insulating film that has been peeled off may adhere to the surface of the semiconductor light-emitting element and cause a problem that adversely affects the yield. It is also conceivable that the Pd electrode on the insulating film is not completely peeled off, but has a shape like an eaves extending from the Pd electrode on the contact. In this case, there is a problem that the pad electrode cannot be formed at a desired place in the subsequent pad electrode forming process due to the above-described eaves-shaped portion. As a result, there is a problem that an unformed part (hole) is generated in the pad electrode. Furthermore, when the Pd electrode on the insulating film is peeled off, the p-type contact layer may be exposed on the surface by peeling off a part of the Pd electrode on the contact. In this case, a pad electrode is directly formed on the p-type contact layer exposed on the surface. For example, Au contained in the pad electrode diffuses into the p-type semiconductor layer, and there is a problem that adversely affects the characteristics and reliability of the semiconductor light emitting device.

  In order to suppress such peeling of the Pd electrode on the insulating film, an adhesion layer may be formed between the insulating film and the Pd electrode to improve the adhesion between the Pd electrode on the insulating film and the insulating film. However, in order to form the above-mentioned adhesion layer at a desired location, there is a problem that an increase in the process is inevitable and the manufacturing cost is increased.

  The present invention has been made in order to solve the above-described problems. The yield is reduced due to adhesion of the peeled Pd electrode on the insulating film to the surface of the semiconductor light emitting device, generation of a pad electrode non-formed portion, p-type, and the like. It is an object of the present invention to provide a method for manufacturing a semiconductor light emitting device that can avoid the problem of contact between a contact layer and a pad electrode by a simple method without forming the above-mentioned adhesion layer.

The manufacturing method of the semiconductor light emitting device according to the invention of the present application is as follows:
Forming an insulating film having an opening on a semiconductor;
Forming a Pd electrode on the opening and the insulating film;
A peeling step of applying a physical force to the Pd electrode on the insulating film to peel and remove the Pd electrode on the insulating film while leaving the Pd electrode in the opening. It is characterized by that.

  According to the present invention, it is possible to avoid the adverse effects caused by the Pd electrode peeling by a simple process.

Embodiment 1
The present embodiment relates to a method for manufacturing a semiconductor light emitting device including a Pd electrode, and more particularly to a method for manufacturing a semiconductor light emitting device that can avoid adverse effects such as a decrease in yield caused by the formation of the Pd electrode by a simple method. Hereinafter, a method for manufacturing the semiconductor light emitting device of this embodiment will be described sequentially from FIG. For convenience of explanation, a “substrate to be a semiconductor light emitting element” that has not finished the manufacturing process may be referred to as a semiconductor light emitting element.

  FIG. 1 is a diagram illustrating a process of forming an insulating film according to this embodiment. The semiconductor light emitting device of this embodiment is formed using a GaN substrate and includes an active layer 18 (not shown in FIG. 2 and subsequent figures). A p-type semiconductor layer 16 is provided on the active layer 18. The p-type semiconductor layer 16 includes a portion having a low height called a channel portion 12 at a predetermined position. The channel portion 12 is a groove sandwiched between the ridge portion 10 and the terrace portion 14. Then, the p-type contact layer 20 is formed as the uppermost layer of the ridge portion 10. The p-type contact layer 20 is connected to an electrode described later that supplies power to the p-type semiconductor layer 16. In the present embodiment, the difference in height between the groove bottom of the channel portion 12 and the top surface of the ridge portion is 0.5 μm. The width of the ridge portion 10 is 1.5 μm.

  The first insulating film 22 is formed on the wafer surface having the above-described configuration. The first insulating film 22 is formed in the channel portion 12. Further, a second insulating film 24 is formed on part of the channel portion 12 and the terrace portion 14. The first insulating film 22 and the second insulating film 24 are formed so as to provide an opening for exposing the p-type contact layer 20 on the upper surface of the ridge portion 10 as a whole. In the present embodiment, both the first insulating film 22 and the second insulating film 24 are made of SiO2.

  FIG. 2 is a diagram illustrating a process of forming the Pd electrode 26 after the configuration of FIG. 1 is formed. In this embodiment, the Pd electrode 26 is formed so as to cover the ridge portion 10 by normal vapor deposition (deposition means that vapor deposition proceeds exclusively in a direction perpendicular to the main surface of the wafer (semiconductor light emitting element)). More specifically, the Pd electrode 26 covers the upper surface and side surfaces of the ridge portion 10, and is also integrally formed on a part of the groove bottom portion of the channel portion 12. In addition, about the part in which a Pd electrode is not formed, it is good also as a structure covered with the resist etc. when forming a Pd electrode by normal vapor deposition. Further, Pd is formed thick on the upper surface of the ridge portion 10 and the groove bottom portion of the channel portion 12 by the effect of the normal vapor deposition described above. On the other hand, Pd is formed thinly on the side surface of the ridge portion 10.

  In the present embodiment, the thickness of the Pd electrode 26 on the upper surface of the ridge portion 10 is 100 nm. Here, as can be seen from FIG. 2, the Pd electrode 26 has a portion in contact with the first insulating film 22 (hereinafter referred to as Pd electrode on the insulating film) and a portion in contact with the p-type contact layer (hereinafter referred to as Pd on the contact). Referred to as an electrode). In this embodiment, the length of the portion where the Pd electrode on the insulating film overlaps with the groove bottom of the channel portion 12 is 2.75 μm.

  When the Pd electrode 26 is formed, a sintering heat treatment is performed to improve the adhesion between the Pd electrode on contact and the p-type contact layer 20. The sintering heat treatment is typically performed at a temperature of about 400 ° C. to 550 ° C., but is not particularly limited thereto.

  FIG. 3 is a diagram for explaining a step (peeling step) of peeling the Pd electrode on the insulating film described above after the configuration of FIG. 2 is formed. The on-contact Pd electrode is formed with good adhesion to the p-type contact layer 20 which is a part of the p-type semiconductor layer 16, but the on-insulating Pd electrode has poor adhesion to the second insulating film 22 and is easily peeled off. The Pd electrode on the insulating film can be peeled off by applying a physical force.

  In the method for manufacturing the semiconductor light emitting device of this embodiment, the Pd electrode on the insulating film is peeled off by using the physical force of the liquid ejected from the liquid spray ejection device 21 shown in FIG. The liquid spray ejection device 21 is a device that ejects liquid from the outside of the wafer and scans the wafer surface while scanning the direction parallel to the main surface of the wafer. The liquid spray port of the liquid spray spray device 21 is inclined by a predetermined angle from the normal direction of the wafer main surface. In addition, the liquid spray ejection device 21 of the present embodiment includes a two-fluid fine particle sprayer that ejects a mixed liquid of N2 and pure water.

  As described above, the Pd electrode on the insulating film is peeled off using the liquid spray jetting device 21. At this time, the Pd electrode on the contact is not peeled off. That is, the flow rate of the liquid ejected from the liquid spray ejection device 21 and the pressure of the ejected liquid are such that the Pd electrode 26 has a physical force that does not peel off the Pd electrode on the contact but peel off the Pd electrode on the insulating film. Adjusted to affect. In the present embodiment, the flow rate of the liquid ejected from the liquid spray ejection device 21 is 200 ml / min, and the pressure of the ejected liquid is 0.4 MPa.

  FIG. 4 is a diagram illustrating a process of forming the adhesion layer 30 on the ridge portion 10, the channel portion 12, and the terrace 14 after the configuration of FIG. 3 is formed. In the present embodiment, Ti or Cr is formed as the adhesion layer 30. The adhesion layer 30 is formed in order to improve adhesion between a barrier metal layer, which will be described later, and the wafer.

  FIG. 5 is a diagram illustrating a process of forming the barrier metal layer 32 on the adhesion layer 30 after the configuration of FIG. 4 is formed. In this embodiment, Pt is formed as the barrier metal layer 32. The barrier metal layer 32 suppresses penetration of metal atoms into the p-type semiconductor layer. As the barrier metal layer, any conductor can be used as long as it is a conductor that can prevent the material from diffusing beyond the boundary between the layers. For example, Mo, Ta, Ni, etc. may be formed in addition to Pt.

  FIG. 6 is a diagram illustrating a process of forming the pad electrode 34 on the barrier metal layer 32 after the configuration of FIG. 5 is formed. The pad electrode 34 of the present embodiment may have a multilayer structure or a single layer structure, but a layer containing at least Au is formed. One embodiment of the present invention is as described above. Hereinafter, problems that have been the motivation for the present invention will be described.

  In general, p-type electrodes in nitride semiconductor light emitting devices such as GaN are required to have improved ohmic characteristics and low resistance in order to improve electrical characteristics. Pd electrodes are promising as p-type electrodes that meet the above-mentioned requirements. However, the Pd electrode and the insulating film are inherently poor in adhesion, and the Pd electrode may peel off. Here, the Pd electrode only needs to be in contact with the p-type semiconductor layer. However, it is not realistic from the viewpoint of process margin and the like to form the Pd electrode with good positional accuracy and reproducibility so as to be in contact only with the p-type semiconductor layer. Therefore, since the Pd electrode is necessarily formed so as to be in contact with the insulating film, the problem of Pd electrode peeling (Pd electrode peeling on the insulating film) may occur.

  FIG. 7 is a diagram for explaining typical adverse effects caused by the Pd electrode peeling described above. The peeled Pd electrode on the insulating film causes defects such as deterioration of the film quality of the pad electrode formed by the subsequent step of forming the pad electrode by attaching to the channel portion or the like as the defect Pd44. In addition, among the Pd electrodes on the insulating film, a burr portion 42 that has been peeled off from the insulating film but remains connected to the Pd electrode on the contact may be considered. The burrs 42 may become “eaves” that hinder the formation of the pad electrodes immediately below the burrs 42 in the subsequent step of forming the pad electrodes. Therefore, the burrs 42 may be disadvantageous in that the pad electrodes to be continuously formed are formed discontinuously or unnecessary unformed portions are generated in the pad electrodes.

FIG. 8 is a diagram for explaining another typical adverse effect caused by the Pd electrode peeling described above. FIG. 8 shows a ridge portion when a part of the Pd electrode on the contact is peeled off when the Pd electrode on the insulating film is peeled off. The on-contact Pd electrode has good adhesion to the p-type contact layer 20, but may be peeled off together with the on-insulating Pd electrode in a portion close to the on-insulating Pd electrode. In such a case, a contact layer exposed portion 46 which is a portion where the p-type contact layer 20 is exposed on the surface is generated. Then, since the metal such as Au formed in the subsequent step of forming the pad electrode is directly formed on the contact layer exposed portion 46, the metal such as Au is transferred from the contact layer exposed portion 46 to the p-type semiconductor layer. 16 is entered. As a result, for example, it is conceivable that a deep level is formed in the band gap of the active layer and the electrical and optical characteristics of the semiconductor light emitting device are fluctuated and deteriorated.
As described above, when a p-type electrode is formed using Pd, there is a problem that the yield decreases due to the typical example described with reference to FIGS.

  7 and 8 is caused by the Pd electrode peeling off. Therefore, it is conceivable to form an adhesion layer between the Pd electrode and the insulating film in order to improve the adhesion. Since it is considered that the problem of peeling of the Pd electrode is suppressed when the adhesion layer is formed, the adverse effects as illustrated in FIGS. 7 and 8 can be avoided and the effect of improving the yield can be obtained, but the number of processes increases (complexity of processes). It is conceivable that the manufacturing cost is increased by that amount.

  According to the method for manufacturing a semiconductor light emitting device of the present embodiment, the adverse effects shown in FIGS. 7 and 8 can be avoided by a simple process that does not complicate the manufacturing process. That is, according to the method for manufacturing a semiconductor light emitting device of this embodiment, the Pd electrode on the insulating film is peeled off by the liquid ejected from the liquid spray ejecting device 21 and removed from the surface of the semiconductor light emitting device together with the liquid. It is possible to suppress the defect Pd from adhering to the semiconductor light emitting element.

  Moreover, according to the manufacturing method of the semiconductor light emitting element of this embodiment, generation | occurrence | production of the burr | flash part 42 shown in FIG. 7 can be suppressed. This will be described with reference to FIG. FIG. 9 is a diagram for explaining a typical example of the state in which the Pd electrode on the insulating film is peeled off by the liquid ejected from the liquid spray ejection device 21. FIG. Since the Pd electrode on the insulating film has poor adhesion to the insulating film, the Pd electrode on the insulating film is peeled off from the insulating film by the liquid ejected from the liquid spray ejecting device 21 or regardless of the aforementioned liquid. Then, the bonding portion (Pd cutting portion 40) between the Pd electrode on the insulating film and the Pd electrode on the contact is cut by the physical force of the liquid sprayed from the liquid spray jetting device 21, and the Pd electrode on the insulating film is peeled off. Is done.

  In the present embodiment, the following three preparations are made to facilitate the cutting of the Pd electrode performed at the Pd cutting portion 40. The first point is that since the Pd electrode is formed by normal vapor deposition, the Pd electrode is formed thinner than other portions on the side surface of the ridge. This facilitates the cutting of the Pd electrode performed at the Pd cutting portion 40. The second point is that the Pd electrode on contact is formed with a film thickness of 100 nm. This is also a sufficiently thin film thickness that contributes to facilitating the cutting of the Pd electrode performed at the Pd cutting portion 40.

  The third point is that the length of the portion where the Pd electrode on the insulating film overlaps the groove bottom of the channel portion 12 (hereinafter referred to as the channel groove bottom overlapping portion) is 2.75 μm. The channel groove bottom overlapping portion is a part of the Pd electrode on the insulating film, and is a portion that receives physical force from the liquid ejected by the liquid spray ejection device 21, as shown in FIG. Accordingly, the longer the length of the channel groove bottom overlapping portion, the more the Pd electrode on the insulating film can receive a stronger physical force, which is preferable for the cutting of the Pd electrode at the Pd cutting portion 40. In the present embodiment, the length of the channel groove bottom overlapping portion is 2.75 μm to ensure a sufficient length to facilitate cutting.

  By the way, when a physical force is not positively applied to the burr part 42, the burr part 42 tends to remain without being cut off from the Pd electrode on the contact. On the other hand, in the present embodiment, even if the above-described burr portion (Pd electrode on the insulating film) is generated, a physical force is applied and removed by the liquid ejected from the liquid spray ejection device 21. In addition, since the above-mentioned three preparations have been made, it is easy to peel and remove the burr portion (Pd electrode on the insulating film). Therefore, according to the manufacturing method of the semiconductor light emitting device of this embodiment, the pad electrode can be formed without the burr portion.

  In the present invention, a physical force is applied to the Pd electrode on the insulating film to positively remove the Pd electrode on the insulating film, so that the contact layer exposed portion 46 shown in FIG. 8 can be generated. Therefore, in this embodiment, a step of forming the barrier metal layer 32 is performed after the peeling step and before the step of forming the pad electrode 34. That is, the barrier metal layer 32 can suppress a conductor (metal such as Au) constituting the pad electrode from entering the p-type semiconductor layer via the contact layer exposed portion 46. Therefore, according to the manufacturing method of the semiconductor light emitting device of this embodiment, it is possible to avoid the deterioration of the characteristics of the semiconductor light emitting device.

  Further, after the Pd electrode is formed, the removal of the Pd electrode on the insulating film by the liquid spray ejection device 21 can be realized by a simple process, and the influence on the tact time is negligible. Therefore, compared with the case where an adhesion layer or the like is formed between the Pd electrode and the insulating film, the generation of the defect Pd 44 and the burr portion 42 in FIG. 7 can be suppressed with a simple configuration.

  As described above, the first feature of the present invention is that the Pd electrode on the insulating film is removed by a physical force to avoid the generation of defects Pd and burrs. Furthermore, the second feature of the present invention is that a barrier metal layer is formed before the pad electrode is formed in order to suppress the penetration of the conductor from the contact layer exposed portion into the p-type semiconductor layer.

  In the present embodiment, the mixed liquid of N2 and pure water is ejected from the liquid spray ejection device 21, but the present invention is not limited to this. That is, since the present invention can obtain an effect by applying a physical force to the Pd electrode on the insulating film and peeling it off, pure water may be used instead of the mixed solution of N2 and pure water, An organic solvent such as acetone may be used to speed up drying of the surface of the semiconductor light emitting element after peeling. Further, the ejection efficiency of the Pd electrode on the insulating film may be increased by ultrasonically vibrating the ejection port of the liquid spray ejection device 21. However, since the liquid ejected from the liquid spray ejection device 21 is in direct contact with the Pd electrode and the insulating film (the first insulating film and the second insulating film in the present embodiment), it is appropriate to alter or dissolve them. Not.

  Further, the liquid spray ejection device 21 in the present embodiment is an example of means for applying a “physical force” to the Pd electrode on the insulating film, and is not limited to this. That is, the effect of the present invention can also be obtained by immersing the wafer in a chemical bath (or pure water bath) and applying ultrasonic vibrations in order to apply “physical force” to the Pd electrode on the insulating film. The effect of the present invention can also be obtained by blowing an inert gas such as N 2 gas onto the Pd electrode on the insulating film (air blowing). Similarly, a method of spraying particles onto the Pd electrode on the insulating film is conceivable, a method of applying a centrifugal force to the Pd electrode on the insulating film by rotating the wafer, and a suction device for sucking the Pd electrode on the insulating film. Various methods can be used while maintaining the effects of the present invention, such as a method of applying the adhesive tape to the Pd electrode on the insulating film and a method of removing the adhesive tape.

  In the present embodiment, the first insulating film 22 and the second insulating film 24 are made of SiO2, but the present invention is not limited to this. For example, even if a material such as SiN, SiON, TEOS, ZrO2, TiO2, Ta2O5, Al2O3, Nb2O5, Hf2O5, or AlN is used as the insulating film, the effect of the present invention is not lost.

  In the present embodiment, the Pd electrode is formed by normal vapor deposition, but the present invention is not limited to this. That is, as described above, the thin Pd electrode formed on the side surface of the ridge portion by normal vapor deposition contributes to facilitating the peeling of the Pd electrode on the insulating film, but does not require such ease. In some cases, the effect of the present invention can be obtained by forming the Pd electrode by sputtering or CVD. Film formation by vapor deposition such as normal vapor deposition does not cause dry damage to the semiconductor light emitting element substrate using a GaN-based material as in this embodiment, but a Pd electrode is formed by sputtering or the like. In this case, it is necessary to suppress the dry damage due to plasma within an allowable range.

  In the present embodiment, the on-contact Pd electrode has a thickness of 100 nm, but the present invention is not limited to this. That is, the thickness of the Pd electrode on the contact is not limited as long as it is thicker than 10 nm, which is in the middle of the island-like growth process, and thinner than 400 nm, which is the limit that does not deteriorate the ease of cutting of the Pd cut portion 40.

  In the present embodiment, the length of the channel groove bottom overlapping portion is 2.75 μm, but the present invention is not limited to this. That is, as described above, the channel groove bottom overlapping portion is preferably as long as possible from the viewpoint of easy cutting of the Pd cutting portion 40. Accordingly, the length of the channel groove bottom overlapping portion is not particularly limited as long as it is 0.5 μm or more which is the minimum necessary from the viewpoint of the process margin. Furthermore, in relation to the liquid spray ejection device 21 of the present embodiment, when the length of the channel groove bottom overlapping portion is 2.75 μm, the Pd cutting portion 40 can be cut with good reproducibility. More preferably, it is 2.75 μm or more.

  In the present embodiment, the adhesion layer 30 is formed before the formation of the barrier metal in order to improve the adhesion between the layers, but the present invention is not limited to this. That is, after the formation of the barrier metal, the adhesion layer 30 may be formed before the pad electrode is formed, or the adhesion layer 30 may be formed above and below the barrier metal. Moreover, when there is no problem in the adhesion between layers, the structure which does not form the adhesion layer 30 may be sufficient. In the present invention, since the contact between the Pd electrode and the insulating film (the first insulating film or the second insulating film) is an essential requirement for obtaining an effect, in the present invention, there is no gap between the Pd electrode and the insulating film. An adhesion layer is not formed.

  The semiconductor light emitting device of this embodiment includes a substrate made of a GaN-based material, but the present invention is not limited to this. That is, as long as it is a semiconductor capable of low resistance ohmic contact with a Pd electrode (or an electrode containing Pd), it is not limited to GaN, but may be other materials.

  In this embodiment, the sintering heat treatment is performed after the Pd electrode 26 is formed, but the present invention is not limited to this. The sintering heat treatment may be performed at any time during the manufacturing process as long as the adhesion between the Pd electrode on the contact and the p-type contact layer can be improved. Similarly, the temperature of the sintering heat treatment is also arbitrary.

  Here, the adverse effect of “peeling of the Pd electrode on the insulating film” described with reference to FIG. 7 occurs anytime after the formation of the Pd electrode because the adhesion between the Pd electrode and the insulating film is poor. However, the adverse effect of “peeling of the Pd electrode on the insulating film” after the sintering heat treatment is particularly remarkable. From this, it is considered that the adhesion between the Pd electrode (Pd) on the insulating film (Pd) and the insulating film (SiO 2) is reduced by the sintering heat treatment because of the large difference in the coefficient of thermal expansion. Therefore, if the step (peeling step) of peeling the Pd electrode on the insulating film after the sintering heat treatment is performed, the Pd electrode on the insulating film can be easily peeled off, and the portion of the Pd electrode peeled off by the sintering heat treatment can also be removed. On the other hand, as long as the Pd electrode on the insulating film can be sufficiently removed in the peeling step even if the sintering heat treatment is performed after the peeling step, “defect Pd44 and burr portion 42 (FIG. 7)” which is one of the effects of the present invention. Can be suppressed.

  The Pd electrode of the present embodiment is not limited to a single Pd layer, and may be a Pd / Ta laminated structure or a Pd / Ta / Pd laminated structure. Here, / used earlier indicates a laminated structure. Further, even if the pad electrode of this embodiment has a laminated structure such as Ti / Ta / Ti / Au or Ti / Mo / Ti / Au, the effect of the present invention is not lost.

  The present invention applies a physical force to the Pd electrode on the insulating film to remove (peel) it from the wafer surface and prevent the metal that is a component of the pad electrode from entering the p-type semiconductor layer. It is characterized by forming a barrier metal layer as much as possible. Accordingly, various modifications can be considered without departing from the scope of the present invention.

It is a figure explaining the process of forming an insulating film. It is a figure explaining the process of forming a Pd electrode. It is a figure explaining the process (peeling process) which peels Pd electrode on an insulating film. It is a figure explaining the process of forming an adhesion layer. It is a figure explaining the process of forming a barrier metal layer on an adhesion layer. It is a figure explaining the process of forming a pad electrode on a barrier metal layer. It is a figure explaining the typical bad effect resulting from Pd electrode peeling. It is a figure explaining another typical bad effect resulting from Pd electrode peeling. It is a figure explaining the typical example about a mode that Pd electrode on an insulating film peels with the liquid which the liquid spray ejection apparatus ejects.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Ridge part 16 p-type semiconductor layer 20 p-type contact layer 21 Liquid spray ejection apparatus 22 First insulating film 26 Pd electrode 32 Barrier metal layer 34 Pad electrode 40 Pd cutting part

Claims (12)

Forming an insulating film having an opening on a semiconductor;
Forming a Pd electrode on the opening and the insulating film;
A peeling step of applying a physical force to the Pd electrode on the insulating film to peel and remove the Pd electrode on the insulating film while leaving the Pd electrode in the opening. A method for manufacturing a semiconductor light emitting device.   The physical force may be any one or more of: spraying a liquid spray, applying ultrasonic vibration, spraying air, spraying particles, applying centrifugal force, suction by an air intake device, attaching and removing tape. The method of manufacturing a semiconductor light emitting device according to claim 1, wherein the method is provided by means.   The method for manufacturing a semiconductor light emitting element according to claim 1, further comprising a step of performing a heat treatment after the step of forming the Pd electrode and before the peeling step.   The method of manufacturing a semiconductor light emitting element according to claim 1, wherein the Pd electrode is formed by vapor deposition. A step of forming a ridge portion in the semiconductor before the step of forming the insulating film;
Forming the opening on the upper surface of the ridge;
2. The method of manufacturing a semiconductor light emitting element according to claim 1, wherein in the step of forming the Pd electrode, the Pd electrode in the opening is formed with a film thickness of 10 to 400 nm. In the step of forming the Pd electrode, the Pd electrode is formed so as to cover the ridge portion,
The semiconductor according to claim 5, wherein the Pd electrode is formed to have a thickness of 0.5 μm or more from a side surface of the ridge portion along a bottom surface of a channel portion adjacent to the ridge portion and having a lower height than the ridge portion. Manufacturing method of light emitting element. In the step of forming the Pd electrode, the Pd electrode is formed so as to cover the ridge portion,
The semiconductor according to claim 5, wherein the Pd electrode is formed to be 2.75 μm or more along a bottom surface of a channel portion adjacent to the ridge portion and having a height lower than the ridge portion from a side surface of the ridge portion. Manufacturing method of light emitting element.   8. The method of manufacturing a semiconductor light emitting element according to claim 1, wherein the Pd electrode has a laminated structure including a plurality of layers in which Pd is a first layer. A barrier metal forming step of forming a barrier metal layer on the Pd electrode after the peeling step;
8. The method of manufacturing a semiconductor light emitting element according to claim 1, further comprising a step of forming a pad electrode containing Au on the barrier metal layer after the barrier metal forming step.   The method for manufacturing a semiconductor light emitting device according to claim 9, wherein the barrier metal layer includes any one of Pt, Mo, Ta, and Ni.   10. The semiconductor light emitting device according to claim 9, further comprising a step of forming either a Ti layer or a Cr layer on the Pd electrode after the peeling step and before the barrier metal forming step. Manufacturing method.   10. The method of forming a Ti layer or a Cr layer on the barrier metal layer after the barrier metal forming step and before the step of forming the pad electrode. To 11. The method for producing a semiconductor light emitting device according to 11 above.

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