CN101478020A - Method for manufacturing semiconductor light emitting device - Google Patents
Method for manufacturing semiconductor light emitting device Download PDFInfo
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- CN101478020A CN101478020A CN 200810190645 CN200810190645A CN101478020A CN 101478020 A CN101478020 A CN 101478020A CN 200810190645 CN200810190645 CN 200810190645 CN 200810190645 A CN200810190645 A CN 200810190645A CN 101478020 A CN101478020 A CN 101478020A
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Abstract
The invention a method for manufacturing a semiconductor light emitting device with a Pd electrode, aiming at providing a method for manufacturing a semiconductor light emitting device to avoid the problems of the reduced yield caused by adhesion of Pd electrode to semiconductor light emitting device by a simple method, partial formed pad electrode and contact between a p-type contact layer and the pad electrode. A method for manufacturing a semiconductor light emitting device includes forming an insulating film on a semiconductor substrate, the insulating film having an opening therein, forming a Pd electrode in the opening and on the insulating film, and removing the portion of the Pd electrode on the insulating film by the application of a physical force to the portion, while leaving the Pd electrode in the opening.
Description
Technical field
The present invention relates to use the manufacture method of Pd electrode as the semiconductor light-emitting elements of electrode.
Background technology
In semiconductor light-emitting elements, the p type semiconductor layer that forms on the upper strata of active layer, its part is connected with the p type electrode that is used for to the power supply of p type semiconductor layer.In the p type semiconductor layer, the above-mentioned part that is connected with p type electrode is called p type contact layer.And, the viewpoint of improving from characteristics such as low-power consumptionizations, for p type electrode require to improve ohm property and with p type contact layer low resistance contact.
Here, for example in the nitride semiconductor luminescent element that bluish violet LD uses, in order to satisfy above-mentioned requirements, the situation of use Pd (or contain Pd material) is arranged as p type electrode.The Pd electrode forms on p type contact layer at least.But, on dielectric film, also form the Pd electrode usually in order to make it to have allowance (processmargin).Therefore, the Pd electrode possesses the part (being called Pd electrode on the contact layer) that forms and in the part that forms on the dielectric film (being called Pd electrode on the dielectric film) on p type contact layer.After forming the Pd electrode, on the Pd electrode, form pad electrode.
Patent documentation 1: the clear 60-43830 communique of Japanese Patent Application Publication
Patent documentation 2: Japanese Patent Application Publication 2005-93673 communique
Patent documentation 3: Japanese Patent Application Publication 2003-100758 communique
Patent documentation 4: Japanese Patent Application Publication 2002-205268 communique
Patent documentation 5: the flat 10-74710 communique of Japanese Patent Application Publication
Patent documentation 6: the flat 5-152248 communique of Japanese Patent Application Publication
Patent documentation 7: the flat 1-116070 communique of Japanese Patent Application Publication
Patent documentation 8: Japanese Patent Application Publication 2006-351617 communique
Patent documentation 9: Japanese Patent Application Publication 2006-245379 communique
But,, have the situation that the Pd electrode peels off on the dielectric film because the adaptation of Pd electrode and dielectric film is poor.On the surface of the part of Pd electrode attached to semiconductor light-emitting elements, may cause rate of finished products etc. is caused dysgenic problem on the dielectric film that peels off.In addition, the Pd electrode does not fully peel off on the dielectric film, may become the eaves shape that the Pd electrode extends from the contact layer.At this moment, exist above-mentioned eaves shape partly to cause forming in the operation, can't on the position of expectation, carry out the problem that pad electrode forms at follow-up pad electrode.Consequently have and in pad electrode, produce the problem that does not form part (hole).And then, when the Pd electrode peels off on dielectric film, owing to being peeled, the part of Pd electrode on the contact layer make p type contact layer be exposed to the surface sometimes.In this case, on the p type contact layer that is exposed to the surface, directly form pad electrode.And for example the contained Au of pad electrode etc. exists characteristic, reliability to semiconductor light-emitting elements to cause dysgenic problem to the diffusion of p type semiconductor layer.
In order to suppress peeling off of Pd electrode on this dielectric film, can consider between dielectric film and Pd electrode, to form close binder, make that the adaptation of Pd electrode and dielectric film improves on the dielectric film.But in order to form above-mentioned close binder in desirable position, existence can not be avoided the problem that operation increases and manufacturing cost uprises.
Summary of the invention
The present invention finishes in order to address the above problem just, its purpose is to provide a kind of manufacture method of semiconductor light-emitting elements, above-mentioned close binder be can not form, the generation of part, the problem that p type contact layer contacts with pad electrode do not formed and avoid decrease in yield, the pad electrode that the Pd electrode caused to adhering to of semiconductor light-emitting elements surface on the dielectric film that peels off with easy method.
The manufacture method of the semiconductor light-emitting elements of the present application is characterized in that, possesses:
On semiconductor, form the operation of dielectric film with peristome;
On this peristome and this dielectric film, form the operation of Pd electrode;
To the power of the additional physics of this Pd electrode on this dielectric film, under the state of this Pd electrode of residual this peristome, peel off Pd electrode on this dielectric film and the stripping process of removing.
By the present invention, can utilize easy operation to avoid the Pd electrode and peel off the harm that causes.
Description of drawings
Fig. 1 is the figure that explanation forms the operation of dielectric film.
Fig. 2 is the figure that explanation forms the operation of Pd electrode.
Fig. 3 is the figure that the operation (stripping process) of Pd electrode on the dielectric film is peeled off in explanation.
Fig. 4 is the figure that explanation forms the operation of close binder.
Fig. 5 is explanation forms the operation of barrier metal layer on close binder figure.
Fig. 6 is explanation forms the operation of pad electrode on barrier metal layer figure.
Fig. 7 peels off the figure that the typical harm that causes describes to the Pd electrode.
Fig. 8 peels off another typical case who causes to the Pd electrode to endanger the figure that describes.
Fig. 9 peels off the figure that the situation of Pd electrode on the dielectric film describes its typical case about the liquid that uses the ejection of liquid jet blowoff.
Description of reference numerals
10: ridged portion; The 16:p type semiconductor layer; 20:p type contact layer; 21: liquid jet blowoff; 22: the first dielectric films; The 26:Pd electrode; 32: barrier metal layer; 34: pad electrode; The 40:Pd cut-off parts
Embodiment
Execution mode 1
Present embodiment relates to the manufacture method of the semiconductor light-emitting elements that possesses the Pd electrode, particularly can avoid by simple and easy method and follow the Pd electrode to form the manufacture method of the dysgenic semiconductor light-emitting elements such as decrease in yield that take place.Successively the manufacture method of the semiconductor light-emitting elements of present embodiment is described from Fig. 1 below.Have, for simplicity, " the becoming the raw material substrate of semiconductor light-emitting elements " of also will not finish manufacturing process sometimes is called semiconductor light-emitting elements again.
Fig. 1 is the figure that the operation of the dielectric film that forms present embodiment is described.The semiconductor light-emitting elements of present embodiment utilizes on the GaN substrate and forms, and possesses active layer 18 (Fig. 2 omits later on).Has p type semiconductor layer 16 on the upper strata of active layer 18.P type semiconductor layer 16 has the lower part of height that is called as groove 12 in the position of regulation.The ditch that groove 12 is clipped by ridged portion 10 and platform (terrace) portion 14.And, form p type contact layer 20 as the superiors of ridged portion 10.P type contact layer 20 is connected with the electrode described later of powering to p type semiconductor layer 16.Have, in the present embodiment, the ditch of groove 12 bottom is 0.5 μ m with the difference in height of ridged portion upper surface again.In addition, the width of ridged portion 10 is 1.5 μ m.
Wafer surface at said structure forms first dielectric film 22.First dielectric film 22 forms on groove 12.And then second dielectric film 24 forms in the part of groove 12 and platform portion 14.First dielectric film 22 and second dielectric film 24 form the opening that the upper surface setting in ridged portion 10 is exposed p type contact layer 20 as a whole.In the present embodiment, first dielectric film 22 and second dielectric film 24 are by SiO
2Form.
Fig. 2 is explanation forms the operation of Pd electrode 26 after the structure that forms Fig. 1 figure.In the present embodiment, form Pd electrode 26 by normal evaporation (evaporation that film forming is only advanced along the direction vertical with the interarea of wafer (semiconductor light-emitting elements)) and cover ridged portion 10.Particularly, Pd electrode 26 covers the upper surface and the side of ridged portions 10, and with also whole formation of a part of the ditch bottom of raceway groove 12.Having, for the part that does not form the Pd electrode, is also can with the structure that resist etc. covers when forming the Pd electrode by the normal evaporation again.And,, form Pd than heavy back at the upper surface of ridged portion 10 and the ditch bottom of groove 12 according to the effect of above-mentioned normal evaporation.On the other hand, form Pd in the side of ridged portion 10 than unfertile land.
In the present embodiment, the thickness of the Pd electrode 26 of ridged portion 10 upper surfaces is 100nm.Here, as shown in Figure 2, Pd electrode 26 possesses part (hereinafter referred to as Pd electrode on the dielectric film) of joining with first dielectric film 22 and the part (hereinafter referred to as Pd electrode on the contact layer) of joining with p type contact layer.And in the present embodiment, the length of the ditch of Pd electrode and groove 12 bottom lap is 2.75 μ m on the dielectric film.
When forming Pd electrode 26, carry out sintering heat treatment for the adaptation that improves Pd electrode and p type contact layer 20 on the contact layer.Sintering heat treatment is typically carried out with about 400 ℃～550 ℃ temperature, here is not particularly limited.
Fig. 3 is the operation (stripping process) of Pd electrode on the above-mentioned dielectric film is peeled off in explanation after the structure that forms Fig. 2 figure.Though form Pd electrode on the contact layer well with adaptation, Pd electrode and second dielectric film, 22 adaptation differences on the dielectric film and be easy to peel off as the p type contact layer 20 of the part of p type semiconductor layer 16.And, can make also by the power that applies physics that the Pd electrode peels off on the dielectric film.
In the manufacture method of the semiconductor light-emitting elements of present embodiment, as shown in Figure 3, utilize from the power of the physics of the liquid of liquid jet blowoff 21 ejections and make Pd stripping electrode on the dielectric film.Liquid jet blowoff 21 is scan edges in the main surface parallel direction of wafer, on one side from the device of the outside ejection of wafer liquid to the wafer surface injection.The liquid spraying outlet of liquid jet blowoff 21 is from the normal direction inclination predetermined angular of wafer interarea.In addition, the liquid jet blowoff 21 of present embodiment has ejection N
2Two-fluid particulate sprayer with the mixed liquor of pure water.
As mentioned above, utilize liquid jet blowoff 21, but do not peel off Pd electrode on the contact layer this moment Pd stripping electrode on the dielectric film.That is, be adjusted into, do not make Pd stripping electrode on the contact layer and make the masterpiece of the physics of Pd stripping electrode on the dielectric film be used for Pd electrode 26 from the fluid flow of liquid jet blowoff 21 ejection and the fluid pressure of ejection.In the present embodiment, the fluid flow that sprays from liquid jet blowoff 21 is 200ml/min, and the fluid pressure of ejection is 0.4MPa.
Fig. 4 is explanation forms the operation of close binder 30 in ridged portion 10, groove 12, platform portion 14 after the structure that forms Fig. 3 figure.In the present embodiment, form Ti or Cr as close binder 30.Close binder 30 forms for the adaptation that improves barrier metal layer described later and wafer.
Fig. 5 is explanation forms the operation of barrier metal layer 32 on close binder 30 after the structure that forms Fig. 4 figure.In the present embodiment, form Pt as barrier metal layer 32.The intrusion that barrier metal layer 32 suppresses to the metallic atom of p type semiconductor layer.Have again, so long as can inhibiting substances cross the conductor of the border diffusion of each layer and get final product, except Pt, for example also can form Mo, Ta, Ni etc. as barrier metal layer.
Fig. 6 is explanation forms the operation of pad electrode 34 on barrier metal layer 32 after the structure that forms Fig. 5 figure.The pad electrode 34 of present embodiment can be sandwich construction or single layer structure, but is formed with the layer that comprises Au at least.An embodiment of the invention as mentioned above.Below the problem that becomes motivation of the present invention is described.
Usually, in the p of nitride semiconductor luminescent elements such as GaN type electrode, require the raising and the low resistanceization of ohm property in order to improve electrical characteristic.The Pd electrode then is expected to as satisfying the p type electrode of above-mentioned requirements, still, because Pd electrode and dielectric film constitutionally adaptation difference and peeling off of Pd electrode taken place sometimes.Here, the Pd electrode only joins with the p type semiconductor layer and gets final product.But, from the viewpoint of allowance etc. so that the mode that the Pd electrode only contacts with the p type semiconductor layer and positional precision well and reproducibility to form well be unpractical.Therefore, because the Pd electrode can form in the mode of joining with dielectric film inevitably, so the problem that the Pd electrode peels off (the Pd electrode peels off on the dielectric film) may take place.
Fig. 7 peels off the typical case who causes to above-mentioned Pd electrode to endanger the figure that describes.The Pd electrode for example is attached on the groove etc. as defective Pd44 on the dielectric film that peels off, and becomes the reason of the harm of the membranous deterioration that makes the pad electrode that the operation by follow-up formation pad electrode forms etc.In addition, on dielectric film in the Pd electrode, though also may take place with dielectric film peel off with contact layer on Pd electrode remaining burr part 42 under the state that still is connected.Burr part 42 becomes " eaves " portion that hinders the pad electrode under the burr part 42 to form sometimes in the operation as the formation pad electrode of subsequent handling.Therefore because the pad electrode that burr part 42 may cause forming continuously forms discontinuously, perhaps on pad electrode, produce the unnecessary harm that does not form part.
Fig. 8 peels off another typical case who causes to above-mentioned Pd electrode to endanger the figure that describes.Ridged portion when the part of Pd electrode peeled on Fig. 8 represented when the Pd electrode peels off on the dielectric film contact layer.Though the adaptation of Pd electrode and p type contact layer 20 is good on the contact layer, in the approaching part of Pd electrode on dielectric film, have with dielectric film on the Pd electrode situation of being stripped from.In this case, produce the contact layer exposed division 46 that is exposed to the part on surface as p type contact layer 20.And, because the metals such as Au that form in the operation as the formation pad electrode of subsequent handling directly form on contact layer exposed division 46, so metals such as Au are invaded to p type semiconductor layer 16 from contact layer exposed division 46.Consequently, for example have and in the band gap of active layer, to form darker energy level and make the electricity of semiconductor light-emitting elements, the change of light characteristic or the harm of deterioration.
As mentioned above, when using Pd to form p type electrode, occur in the problems such as rate of finished products reduction that Fig. 7,8 typical case that illustrate etc. cause sometimes.
The harm of Fig. 7,8 explanations is peeled off by the Pd electrode and is caused.Therefore, can consider that for the adaptation that improves Pd electrode and dielectric film between forms close binder.Owing to can suppress the problem of peeling off of Pd electrode when forming close binder, receive the effect that rate of finished products improves so can avoid Fig. 7,8 illustrative harm, but but cause the manufacturing cost rising because operation increases (complex proceduresization).
According to the manufacture method of the semiconductor light-emitting elements of present embodiment, can not have the complicated of production process and avoid the harm shown in Fig. 7,8 by easy operation.Promptly, manufacture method according to the semiconductor light-emitting elements of present embodiment, liquid by liquid jet blowoff 21 ejection is with Pd stripping electrode on the dielectric film, and remove from the surface of semiconductor light-emitting elements with this liquid, be attached on the semiconductor light-emitting elements thereby can suppress defective Pd shown in Figure 7.
In addition, according to the manufacture method of the semiconductor light-emitting elements of present embodiment, can suppress the generation of burr part 42 shown in Figure 7.Be explained with reference to Fig. 9.Fig. 9 is the figure that its typical case is described at the situation that the liquid that utilizes liquid jet blowoff 21 ejection is peeled off Pd electrode on the dielectric film.Because the adaptation of Pd electrode and dielectric film is poor on the dielectric film, therefore peel off by the liquid and the dielectric film of 21 ejections of liquid jet blowoff, perhaps do not peel off with dielectric film by aforesaid liquid.And the power of the physics of the liquid by liquid jet blowoff 21 ejection with bonding part (the Pd cut-off parts 40) cut-out of Pd electrode on Pd electrode and the contact layer on the dielectric film, thereby is peeled off Pd electrode on the dielectric film.
In the present embodiment, for becoming, the cut-out that makes the Pd electrode that carries out in Pd cut-off parts 40 carries out following 3 preparations easily.First point, owing to be formed with the Pd electrode by the normal vapour deposition method, so the Pd electrode forms thinly in the ridge side than other parts.Make the cut-out of the Pd electrode that carries out in Pd cut-off parts 40 become easy thus.Second point, the Pd electrode forms thickness 100nm on the contact layer.This also is to help to make the cut-out of the Pd electrode that carries out in Pd cut-off parts 40 to become to be easy to the thickness that enough approaches.
Thirdly, the length of the overlapping part (hereinafter referred to as the overlapping portion of raceway groove bottom of trench) in the ditch of Pd electrode and groove 12 bottom forms 2.75 μ m on the dielectric film.The overlapping portion of raceway groove bottom of trench is the part of Pd electrode on the dielectric film, as shown in Figure 9, is the part of power of physics that is subjected to the liquid of liquid jet blowoff 21 ejection.Therefore, the length of the overlapping portion of raceway groove bottom of trench is long more, and the Pd electrode can be subjected to the power of stronger physics on the dielectric film, so be preferred for the cut-out of the Pd electrode in the Pd cut-off parts 40.In the present embodiment, the length of the overlapping portion of raceway groove bottom of trench is 2.75 μ m, has guaranteed that enough length makes cut-out become easy.
, under the situation of the power that can not apply physics to burr part 42 energetically, burr part 42 easily and on the contact layer Pd electrode be not cut off and residual.On the other hand, in the present embodiment, even above-mentioned burr part (Pd electrode on the dielectric film) takes place, the also liquid that can spray by liquid jet blowoff 21 applies the power of physics and removes.And owing to carried out above-mentioned 3 preparations, peeling off and removing of burr part (Pd electrode on the dielectric film) is easy.Therefore, according to the manufacture method of the semiconductor light-emitting elements of present embodiment, can form pad electrode etc. with the state that has the burr part.
In the present invention, because Pd electrode on the dielectric film is applied the power of physics and energetically Pd electrode on the dielectric film is removed, so contact layer exposed division 46 shown in Figure 8 may take place.Therefore in the present embodiment, behind stripping process, before the operation of formation pad electrode 34, implement to form the operation of barrier metal layer 32.That is, the conductor (metal such as Au) that can suppress to constitute pad electrode by barrier metal layer 32 invades in the p type semiconductor layer via contact layer exposed division 46.Therefore, according to the manufacture method of the semiconductor light-emitting elements of present embodiment, the deterioration in characteristics that can avoid semiconductor light-emitting elements.
In addition, after forming the Pd electrode by liquid jet blowoff 21 with dielectric film on the Pd electrode remove, can realize and slight with easy operation the influence of productive temp time.Therefore, compare with the situation that between Pd electrode and dielectric film, forms close binder etc., can be with the defective Pd44 of easy STRUCTURE DEPRESSION Fig. 7 and the generation of burr part 42.
Like this, of the present invention first is characterised in that, removes Pd electrode on the dielectric film by the power of physics, avoids the generation of defective Pd and burr part.And then of the present invention second is characterised in that, in order to suppress from the intrusion of contact layer exposed division to the conductor of p type semiconductor layer, forms barrier metal layer before forming pad electrode.
In the present embodiment, from the mixed liquor of liquid jet blowoff 21 ejection N2 and pure water, but the invention is not restricted to this.Promptly, the present invention peels off it by the power to the additional physics of Pd electrode on the dielectric film, therefore thereby the acquisition effect also can replace the mixed liquor of N2 and pure water and uses pure water, also can use the rapid draing of acetone and other organic solvent with the semiconductor light-emitting elements surface after seeking to peel off.In addition, also can make the ejiction opening of liquid jet blowoff 21 carry out ultrasonic vibration, to improve the charge stripping efficiency of Pd electrode on the dielectric film.But owing to directly contact with dielectric film (being first dielectric film and second dielectric film in the present embodiment) with the Pd electrode from the liquid of liquid jet blowoff 21 ejections, it is unsuitable therefore making their liquid rotten or dissolving.
In addition, liquid jet blowoff 21 illustrations in the present embodiment to the device of Pd electrode on the dielectric film additional " power of physics ", but be not limited thereto.That is, apply ultrasonic vibration in the dipper (perhaps pure water groove), also can obtain effect of the present invention in order to immerse to Pd electrode effect " power of physics " on the dielectric film and with wafer.In addition, inert gases such as N2 gas Pd electrode on dielectric film is sprayed (air-supply), also can obtain effect of the present invention.Similarly, also can consider method to Pd electrode jet particle on the dielectric film, make wafer rotation and to the method for Pd electrode additional centrifugal force on the dielectric film, use attractor to attract the method for Pd electrode on the dielectric film, pay jointing tape to Pd electrode paste on the dielectric film and, can when keeping effect of the present invention, adopt the whole bag of tricks its method of peeling off etc.
In the present embodiment, first dielectric film 22 and second dielectric film 24 are SiO
2, but the invention is not restricted to this.Dielectric film for example adopts SiN or SiON or TEOS or ZrO
2, or TiO
2, or Ta
2O
5, or Al
2O
3, or Nb
2O
5, or Hf
2O
5, or material such as AlN, also can obtain effect of the present invention.
In the present embodiment, form the Pd electrode by the normal evaporation, but the invention is not restricted to this.Promptly, as mentioned above, form Pd electrode in ridged portion side than unfertile land by the normal evaporation, and help to make that peeling off of Pd electrode becomes easy on the dielectric film, but do not having thisly to be easy to peel off under the situation of requirement, form the Pd electrode by sputtering method or CVD method etc., also can obtain effect of the present invention.Have again, carry out film forming by evaporations such as normal evaporations, can not cause and do loss (drydamage) the semiconductor light-emitting elements substrate that as present embodiment, uses GaN class material, but when formation Pd electrodes such as employing sputtering method, the dried loss that generation causes plasma is suppressed at the needs in the permissible range.
In the present embodiment, the thickness of Pd electrode is 100nm on the contact layer, but the invention is not restricted to this.That is, as long as the 10nm that the thickness of Pd electrode forms in the process way of growing up than island on the contact layer is thick, and it is thin to liken the 400nm of the limit that worsens for the easy cuttability that does not make Pd cut-off parts 40 to, and there is no particular limitation.
In the present embodiment, the length that makes the overlapping portion of raceway groove bottom of trench is 2.75 μ m, but the invention is not restricted to this.That is, as mentioned above, long more preferred more from the length of the overlapping portion of viewpoint raceway groove bottom of trench of the easy cuttability of Pd cut-off parts 40.Therefore, the length of the overlapping portion of raceway groove bottom of trench is from the viewpoint of allowance, as long as above for 0.5 μ m of minimum necessary limit, there is no particular limitation.And then, with the relation of the liquid jet blowoff 21 of present embodiment in, when the length that makes the overlapping portion of raceway groove bottom of trench is 2.75 μ m, can reproducibility well Pd cut-off parts 40 be cut off, the length of the therefore preferred overlapping portion of raceway groove bottom of trench is more than the 2.75 μ m.
Before forming barrier metal, formed close binder 30 for the adaptation that improves interlayer in the present embodiment, but the present invention is not limited to this, that is, barrier metal form the back, pad electrode form before formation close binder 30 also can, also can at the close binder of formation up and down 30 of barrier metal.In addition, under the no problem situation of the adaptation of interlayer, be that the structure that does not form close binder 30 also can.Have, in the present invention, it is in order to obtain the necessary key element of effect, therefore not form close binder between Pd electrode and dielectric film in the present invention that Pd electrode and dielectric film (first dielectric film or second dielectric film) join again.
The semiconductor light-emitting elements of present embodiment has the substrate that GaN class material constitutes, but the invention is not restricted to this.That is, so long as can with the semiconductor of Pd electrode (or comprise Pd electrode) low resistance ohmic contact, then be not limited to GaN and also can be other material.
In the present embodiment, after forming Pd electrode 26, carry out sintering heat treatment, but be not limited thereto.As long as can improve the adaptation of Pd electrode and p type contact layer on the contact layer, sintering heat treatment can be carried out any time in manufacturing process.And the heat treated temperature of sintering is arbitrarily too.
Here, the harm of " the Pd electrode peels off on the dielectric film " of Fig. 7 explanation, any time owing to the adaptation difference of Pd electrode and dielectric film after forming the Pd electrode all may take place.But after sintering heat treatment, the harm of " the Pd electrode peels off on the dielectric film " is remarkable especially.Therefore, owing to Pd electrode (Pd) on the dielectric film and dielectric film (SiO
2) difference of coefficient of thermal expansion is bigger, thereby both adaptations may be owing to sintering heat treatment reduces.Therefore, when after sintering heat treatment, peeling off the operation (stripping process) of Pd electrode on the dielectric film, can also can remove the part of Pd electrode by sintering heat treatment easily with Pd stripping electrode on the dielectric film.On the other hand, even, also can obtain an effect of the present invention, promptly suppress " defective Pd44 and burr part 42 (Fig. 7) " as long as can in stripping process, remove Pd electrode on the dielectric film fully carrying out sintering heat treatment behind the stripping process.
The Pd electrode of present embodiment is not limited to the Pd individual layer, also can be the stepped construction of Pd/Ta, perhaps the stepped construction of Pd/Ta/Pd etc.Here, use previously/expression is a stepped construction.In addition, as the pad electrode of present embodiment, can be stepped constructions such as Ti/Ta/Ti/Au or Ti/Mo/Ti/Au, also all have effect of the present invention.
The present invention is characterised in that, Pd electrode on the dielectric film is applied the power of physics and it is removed (peeling off) from wafer surface, and to invade and form barrier metal layer to the p type semiconductor layer as the metal of the inscape of pad electrode in order to prevent.Therefore, without departing from the present invention, various distortion can be arranged.
Claims (12)
1. the manufacture method of a semiconductor light-emitting elements is characterized in that, possesses:
On semiconductor, form the operation of dielectric film with peristome;
On above-mentioned peristome and above-mentioned dielectric film, form the operation of Pd electrode; And
To the power of the additional physics of the above-mentioned Pd electrode on the above-mentioned dielectric film, under the state of the above-mentioned Pd electrode of residual above-mentioned peristome, with above-mentioned Pd stripping electrode on the above-mentioned dielectric film and the stripping process of removing.
2. the manufacture method of semiconductor light-emitting elements as claimed in claim 1, it is characterized in that any one is paid and peeled off etc. to the attraction that adds, utilizes getter device of the injection of additional, the gas of the injection that the power of above-mentioned physics can be by liquid ejector, ultrasonic vibration, the injection of particle, centrifugal force, the subsides of adhesive tape or a plurality of means apply.
3. the manufacture method of semiconductor light-emitting elements as claimed in claim 1 is characterized in that, possesses: after forming the operation of above-mentioned Pd electrode and the operation of heat-treating before the above-mentioned stripping process.
4. the manufacture method of semiconductor light-emitting elements as claimed in claim 1 is characterized in that, forms above-mentioned Pd electrode by evaporation.
5. the manufacture method of semiconductor light-emitting elements as claimed in claim 1 is characterized in that,
Possess: before the operation that forms above-mentioned dielectric film, on above-mentioned semiconductor, form the operation of ridged portion,
On the upper surface of above-mentioned ridged portion, form above-mentioned peristome,
In forming the operation of above-mentioned Pd electrode, the above-mentioned Pd electrode on above-mentioned peristome is formed with the thickness of 10～400nm.
6. the manufacture method of semiconductor light-emitting elements as claimed in claim 5 is characterized in that,
In forming the operation of above-mentioned Pd electrode, form above-mentioned Pd electrode in the mode that covers above-mentioned ridged portion,
From the side of above-mentioned ridged portion, along with above-mentioned ridged portion in abutting connection with and highly be lower than the bottom surface of the groove of above-mentioned ridged portion, above-mentioned Pd electrode is formed more than the 0.5 μ m.
7. the manufacture method of semiconductor light-emitting elements as claimed in claim 5 is characterized in that,
In forming the operation of above-mentioned Pd electrode, form above-mentioned Pd electrode in the mode that covers above-mentioned ridged portion,
From the side of above-mentioned ridged portion, along with above-mentioned ridged portion in abutting connection with and highly be lower than the bottom surface of the groove of above-mentioned ridged portion, above-mentioned Pd electrode is formed more than the 2.75 μ m.
8. as the manufacture method of each described semiconductor light-emitting elements of claim 1 to 7, it is characterized in that above-mentioned Pd electrode is with the stepped construction of Pd as a plurality of layers of formation of ground floor.
9. as the manufacture method of each described semiconductor light-emitting elements of claim 1 to 7, it is characterized in that, possess:
Form operation at the barrier metal that on above-mentioned Pd electrode, forms barrier metal layer behind the above-mentioned stripping process; And
After above-mentioned barrier metal forms operation, on above-mentioned barrier metal layer, form the operation of the pad electrode that comprises Au.
10. the manufacture method of semiconductor light-emitting elements as claimed in claim 9 is characterized in that, above-mentioned barrier metal layer comprises any one of Pt, Mo, Ta, Ni.
11. the manufacture method of semiconductor light-emitting elements as claimed in claim 9 is characterized in that, possesses: behind above-mentioned stripping process and before the above-mentioned barrier metal formation operation, on above-mentioned Pd electrode, form the operation of any one layer in Ti layer, the Cr layer.
12. the manufacture method of semiconductor light-emitting elements as claimed in claim 9, it is characterized in that, possess: after above-mentioned barrier metal forms operation and before forming the operation of above-mentioned pad electrode, on above-mentioned Pd electrode, form the operation of any one layer in Ti layer, the Cr layer.
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| CN102035137A (en) * | 2009-09-30 | 2011-04-27 | 索尼公司 | Semiconductor laser |
| CN110462387A (en) * | 2017-01-23 | 2019-11-15 | 特索罗科技有限公司 | Light emitting diode (LED) test equipment and manufacturing method |
| CN113945399A (en) * | 2020-07-17 | 2022-01-18 | 军事科学院系统工程研究院网络信息研究所 | Equipment safety and environmental adaptability measuring method based on luminescent material |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7241572B2 (en) * | 2019-03-08 | 2023-03-17 | 日本ルメンタム株式会社 | Semiconductor optical device, optical module, and method for manufacturing semiconductor optical device |
| WO2024053222A1 (en) * | 2022-09-08 | 2024-03-14 | ヌヴォトンテクノロジージャパン株式会社 | Semiconductor laser element |
-
2008
- 2008-12-04 JP JP2008310062A patent/JP2009177141A/en not_active Withdrawn
- 2008-12-08 TW TW97147623A patent/TW200941769A/en unknown
- 2008-12-26 CN CN 200810190645 patent/CN101478020A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102035137A (en) * | 2009-09-30 | 2011-04-27 | 索尼公司 | Semiconductor laser |
| CN102035137B (en) * | 2009-09-30 | 2013-01-09 | 索尼公司 | Semiconductor laser |
| CN110462387A (en) * | 2017-01-23 | 2019-11-15 | 特索罗科技有限公司 | Light emitting diode (LED) test equipment and manufacturing method |
| CN113945399A (en) * | 2020-07-17 | 2022-01-18 | 军事科学院系统工程研究院网络信息研究所 | Equipment safety and environmental adaptability measuring method based on luminescent material |
| CN113945399B (en) * | 2020-07-17 | 2024-05-24 | 军事科学院系统工程研究院网络信息研究所 | Equipment safety and environment adaptability measuring method based on luminescent material |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200941769A (en) | 2009-10-01 |
| JP2009177141A (en) | 2009-08-06 |
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