JP2009170924A - 光起電モジュールの製造方法 - Google Patents
光起電モジュールの製造方法 Download PDFInfo
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- JP2009170924A JP2009170924A JP2009008309A JP2009008309A JP2009170924A JP 2009170924 A JP2009170924 A JP 2009170924A JP 2009008309 A JP2009008309 A JP 2009008309A JP 2009008309 A JP2009008309 A JP 2009008309A JP 2009170924 A JP2009170924 A JP 2009170924A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 80
- 238000000059 patterning Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 20
- 230000005855 radiation Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 229910052779 Neodymium Inorganic materials 0.000 claims description 5
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 5
- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 claims description 5
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 4
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 4
- 230000031700 light absorption Effects 0.000 claims description 3
- 238000009776 industrial production Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 130
- 239000010409 thin film Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 8
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- -1 tin oxide (SnO 2 ) Chemical class 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0626—Energy control of the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Sustainable Development (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Photovoltaic Devices (AREA)
- Laser Beam Processing (AREA)
Abstract
【解決手段】光起電モジュールを製造するために、前側電極層3、半導体層4、および後ろ側電極層5が、直列接続されたセル(C1、C2、・・・、Cn、Cn+1)を形成するように分割線8によってパターン加工される。前側電極層および半導体層のパターン加工が、赤外放射を発するレーザによって行われる。半導体層のパターン加工の際に、レーザの出力が、前側電極層を傷めることがないように小さくされる。
【選択図】図2e
Description
2 ガラス基板
3 前側電極層
4 半導体薄膜層
5 側電極層
6 分割線
7 分割線
8 分割線
9 接点
12 レーザビーム
13 レーザ
C1 帯状セル
C2 セル
Claims (7)
- 直列接続されたセル(C1、C2、・・・、Cn、Cn+1)を形成するように分割線(6、7、8)によってパターン加工された透明な前側電極層(3)、半導体層(4)、および後ろ側電極層(5)が透明な基板(2)上に堆積させられている光起電モジュール(1)を製造するため、前記前側電極層(3)および前記半導体層(4)についてレーザ・パターン加工を実行し、赤外放射を発するレーザ(13)が前記前側電極層(3)のレーザ・パターン加工に使用される方法であって、
前記前側電極層(3)のパターン加工に使用された前記レーザ(13)が、前記半導体層(4)のパターン加工にも使用され、前記レーザ(13)の出力が、前記半導体層(4)のパターン加工の際に、前記前側電極層(3)を傷めることがないように小さくされることを特徴とする方法。 - 前記レーザ(13)が、前記前側電極層(3)の光吸収が少なくとも0.5%である波長を有していることを特徴とする請求項1に記載の方法。
- 1064nmの波長を有するネオジム・ドープの半導体レーザが使用されることを特徴とする請求項1または2に記載の方法。
- イットリウム・アルミニウム・ガーネット・レーザまたはイットリウム・バナデート・レーザが使用されることを特徴とする請求項3に記載の方法。
- ネオジム・ドープのイットリウム・アルミニウム・ガーネット・レーザまたはネオジム・ドープのイットリウム・バナデート・レーザが使用されることを特徴とする請求項3または4に記載の方法。
- 前記半導体層(4)をパターン加工するために、レーザビーム(12)が、前記透明な基板(2)を介して前記前側電極層および前記半導体層(3、4)へと向けられ、あるいは直接に前記半導体層(4)へと向けられることを特徴とする請求項1〜5のいずれか一項に記載の方法。
- 前記半導体層(4)のパターン加工の後で、前記レーザ(13)の出力が、前記半導体層(4)内の分割線(7)の特性に影響を及ぼすことなく前記前側電極層(3)を選択的に変化させるために高められることを特徴とする請求項1に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008005284A DE102008005284A1 (de) | 2008-01-19 | 2008-01-19 | Verfahren und Herstellung eines photovoltaischen Moduls |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009170924A true JP2009170924A (ja) | 2009-07-30 |
Family
ID=40720005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009008309A Pending JP2009170924A (ja) | 2008-01-19 | 2009-01-17 | 光起電モジュールの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8021911B2 (ja) |
EP (1) | EP2081235A3 (ja) |
JP (1) | JP2009170924A (ja) |
DE (1) | DE102008005284A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5712568A (en) * | 1980-06-02 | 1982-01-22 | Rca Corp | Method of producing solar battery |
JPS62142371A (ja) * | 1985-12-17 | 1987-06-25 | Fuji Electric Corp Res & Dev Ltd | 薄膜半導体光電変換装置 |
JP2003031830A (ja) * | 2001-07-12 | 2003-01-31 | Sanyo Electric Co Ltd | 光起電力装置及び光起電力装置の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8330578D0 (en) * | 1983-11-16 | 1983-12-21 | Rca Corp | Inter-connected photovoltaic devices |
US4650524A (en) * | 1984-06-20 | 1987-03-17 | Sanyo Electric Co., Ltd | Method for dividing semiconductor film formed on a substrate into plural regions by backside energy beam irradiation |
EP0500451B1 (fr) * | 1991-02-21 | 1999-01-07 | Phototronics Solartechnik GmbH | Dispositif photovoltaique et module solaire à transparence partielle, et procédé de fabrication |
DE19933703B4 (de) * | 1999-04-07 | 2005-07-28 | Shell Solar Gmbh | Vorrichtung und Verfahren zum Abtragen von Schichten auf einer Solarzelle |
US20030044539A1 (en) * | 2001-02-06 | 2003-03-06 | Oswald Robert S. | Process for producing photovoltaic devices |
US7259321B2 (en) * | 2002-01-07 | 2007-08-21 | Bp Corporation North America Inc. | Method of manufacturing thin film photovoltaic modules |
DE102008006166A1 (de) * | 2008-01-26 | 2009-07-30 | Schott Solar Gmbh | Verfahren zur Herstellung eines photovoltaischen Moduls |
-
2008
- 2008-01-19 DE DE102008005284A patent/DE102008005284A1/de not_active Withdrawn
- 2008-12-05 EP EP08021181A patent/EP2081235A3/de not_active Withdrawn
-
2009
- 2009-01-16 US US12/321,195 patent/US8021911B2/en not_active Expired - Fee Related
- 2009-01-17 JP JP2009008309A patent/JP2009170924A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5712568A (en) * | 1980-06-02 | 1982-01-22 | Rca Corp | Method of producing solar battery |
JPS62142371A (ja) * | 1985-12-17 | 1987-06-25 | Fuji Electric Corp Res & Dev Ltd | 薄膜半導体光電変換装置 |
JP2003031830A (ja) * | 2001-07-12 | 2003-01-31 | Sanyo Electric Co Ltd | 光起電力装置及び光起電力装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US8021911B2 (en) | 2011-09-20 |
EP2081235A3 (de) | 2012-12-26 |
DE102008005284A1 (de) | 2009-07-30 |
EP2081235A2 (de) | 2009-07-22 |
US20090186442A1 (en) | 2009-07-23 |
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