JP2009169394A5 - - Google Patents

Claims (10)

A substrate having a pixel region in which a pixel is formed and a sensor region in which an optical sensor unit is formed;
An illumination unit that illuminates the substrate from one side of the substrate;
A thin film photodiode disposed in the sensor region, having at least a P-type semiconductor region and an N-type semiconductor region, and receiving light incident from the other surface side of the substrate;
It is formed on the one surface side of the substrate so as to face the thin film photodiode via an insulating film, and suppresses light emitted from the illumination unit from directly entering the thin film photodiode from the one surface side. And a metal film fixed at a predetermined potential,
In the thin film photodiode, a width of the P-type semiconductor region in a direction perpendicular to a direction connecting to the N-type semiconductor region, and a width of the N-type semiconductor region in a direction perpendicular to the direction connecting to the P-type semiconductor region Display devices that are formed differently. In the thin film photodiode, the area of the overlapping region of the P-type semiconductor region and the metal film when viewed from the one surface side or the other surface side is the area of the overlapping region of the N-type semiconductor region and the metal film. The display device according to claim 1. The metal film is connected to the N-type semiconductor region;
In the thin film photodiode, a width of the P-type semiconductor region in a direction perpendicular to a direction connecting to the N-type semiconductor region is a width of the N-type semiconductor region in a direction perpendicular to the direction connecting to the P-type semiconductor region. The display device according to claim 1, which is narrower. In the thin film photodiode, the area of the overlapping region of the P-type semiconductor region and the metal film when viewed from the one surface side or the other surface side is the area of the overlapping region of the N-type semiconductor region and the metal film. The display device according to claim 3. 4. The display device according to claim 3, wherein in the thin film photodiode, a ratio R1 of a width of the P-type semiconductor region / a width of the N-type semiconductor region is in a range of 0.3 ≦ R1 <1. The metal film is connected to the P-type semiconductor region;
In the thin film photodiode, a width of the P-type semiconductor region in a direction perpendicular to a direction connecting to the N-type semiconductor region is a width of the N-type semiconductor region in a direction perpendicular to the direction connecting to the P-type semiconductor region. The display device according to claim 1, which is wider. In the thin film photodiode, the area of the overlapping region of the P-type semiconductor region and the metal film when viewed from the one surface side or the other surface side is the area of the overlapping region of the N-type semiconductor region and the metal film. The display device according to claim 6. The display device according to claim 6, wherein in the thin film photodiode, a ratio R2 of a width of the N-type semiconductor region / a width of the P-type semiconductor region is in a range of 0.3 ≦ R2 <1. The thin film photodiode has an intrinsic semiconductor region and / or a low concentration semiconductor region having a lower conductive impurity concentration than the N type semiconductor region and the P type semiconductor region between the N type semiconductor region and the P type semiconductor region. The display device according to claim 1. The display device according to claim 1, wherein the semiconductor region including the P-type semiconductor region and the N-type semiconductor region constituting the thin film photodiode is formed of polycrystalline silicon, microcrystalline silicon, amorphous silicon, or crystalline silicon. .