JP2009147784A5 - - Google Patents

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Publication number
JP2009147784A5
JP2009147784A5 JP2007324500A JP2007324500A JP2009147784A5 JP 2009147784 A5 JP2009147784 A5 JP 2009147784A5 JP 2007324500 A JP2007324500 A JP 2007324500A JP 2007324500 A JP2007324500 A JP 2007324500A JP 2009147784 A5 JP2009147784 A5 JP 2009147784A5
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JP
Japan
Prior art keywords
resistor
mos transistor
gate
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007324500A
Other languages
English (en)
Japanese (ja)
Other versions
JP5130896B2 (ja
JP2009147784A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007324500A priority Critical patent/JP5130896B2/ja
Priority claimed from JP2007324500A external-priority patent/JP5130896B2/ja
Publication of JP2009147784A publication Critical patent/JP2009147784A/ja
Publication of JP2009147784A5 publication Critical patent/JP2009147784A5/ja
Application granted granted Critical
Publication of JP5130896B2 publication Critical patent/JP5130896B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007324500A 2007-12-17 2007-12-17 半導体素子の駆動回路 Expired - Fee Related JP5130896B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007324500A JP5130896B2 (ja) 2007-12-17 2007-12-17 半導体素子の駆動回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007324500A JP5130896B2 (ja) 2007-12-17 2007-12-17 半導体素子の駆動回路

Publications (3)

Publication Number Publication Date
JP2009147784A JP2009147784A (ja) 2009-07-02
JP2009147784A5 true JP2009147784A5 (cg-RX-API-DMAC7.html) 2011-02-03
JP5130896B2 JP5130896B2 (ja) 2013-01-30

Family

ID=40917849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007324500A Expired - Fee Related JP5130896B2 (ja) 2007-12-17 2007-12-17 半導体素子の駆動回路

Country Status (1)

Country Link
JP (1) JP5130896B2 (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015208111A (ja) * 2014-04-21 2015-11-19 ニチコン株式会社 ゲート駆動回路
CN108512403B (zh) * 2018-04-10 2020-02-14 峰岹科技（深圳）有限公司 Mos管驱动电路、驱动芯片及电机
CN115314038B (zh) * 2022-07-19 2025-11-11 派恩杰半导体(浙江)有限公司 基于SiC功率器件的门级缓冲电路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01305618A (ja) * 1988-06-02 1989-12-08 Mitsubishi Electric Corp Ｃｍｏｓインバータ出力回路
JP2731049B2 (ja) * 1991-06-24 1998-03-25 三菱電機株式会社 Ｃｍｏｓ出力回路
JP4727360B2 (ja) * 2005-09-20 2011-07-20 東芝三菱電機産業システム株式会社 絶縁ゲート型半導体素子のゲート回路

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