JP2009142766A - Delivery method of gas to be treated to decomposition treatment device and decomposition treatment device - Google Patents

Delivery method of gas to be treated to decomposition treatment device and decomposition treatment device Download PDF

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JP2009142766A
JP2009142766A JP2007323570A JP2007323570A JP2009142766A JP 2009142766 A JP2009142766 A JP 2009142766A JP 2007323570 A JP2007323570 A JP 2007323570A JP 2007323570 A JP2007323570 A JP 2007323570A JP 2009142766 A JP2009142766 A JP 2009142766A
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temperature
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JP5438271B2 (en
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Akihiro Takeuchi
章浩 竹内
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Chubu Electric Power Co Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a delivery method of a gas to be treated to a decomposition treatment device which enables variably quantitatively determining and supplying the gas to be treated containing a halogen-containing compound in accordance with an intra-temperature of a reaction tube, and stably supplying of the gasified halogen-containing compound into the reaction tube, without regasification of the gasified halogen-containing compound, and a decomposition treatment device. <P>SOLUTION: This decomposition treatment device 10 is equipped with a tubing pump 78 for delivering the gas to be treated which is obtained by gasifying the liquid halogen-containing compound, in a variably quantitatively determinable manner, to the reaction tube 20 in accordance with the internal temperature of the reaction tube 20. In addition, a partial pressure setting device 90 is arranged in a pipeline 84 between the tubing pump 78 and the reaction tube 20. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、分解処理装置に対する被処理ガスの送出方法及び分解処理装置に関する。   The present invention relates to a method for delivering a gas to be processed to a decomposition processing apparatus and a decomposition processing apparatus.

近年、オゾン層破壊低減のためにフロン類の生産・使用規制が始まる前に生産された冷蔵庫や冷房装置(エアコン)が廃棄されつつある。また、フロン類、ハロン類は、工業製品等の洗浄に多用されている。それらの含ハロゲン化合物は、高い温暖化係数を示す温室効果ガスとして、又、フロン類はさらにオゾン層破壊ガスとしても知られている。以下、フロン類、ハロン類のハロゲンを含む化合物や、ハロゲンガス等を総称して「含ハロゲン化合物」という。   In recent years, refrigerators and cooling devices (air conditioners) produced before the start of restrictions on the production and use of chlorofluorocarbons for the purpose of reducing ozone layer destruction are being discarded. In addition, chlorofluorocarbons and halocarbons are frequently used for cleaning industrial products and the like. These halogen-containing compounds are known as greenhouse gases exhibiting a high warming potential, and chlorofluorocarbons are further known as ozone-depleting gases. Hereinafter, chlorofluorocarbons, halogen compounds such as halogens, halogen gas, and the like are collectively referred to as “halogen-containing compounds”.

このため、使用済みの回収した廃棄含ハロゲン化合物を、効率的に分解処理する方法及び装置が要望されている。そこで、当該要望に応えるべく分解処理装置が、例えば、特許文献1、特許文献2が提案されている。   Therefore, there is a demand for a method and apparatus for efficiently decomposing used recovered halogen-containing compounds. Thus, for example, Patent Document 1 and Patent Document 2 have been proposed as decomposition processing apparatuses in order to meet the demand.

これらの分解処理装置では、廃棄含ハロゲン化合物を分解処理する場合、酸化カルシウムを主成分とする反応処理剤(すなわち、吸着剤)と、廃棄含ハロゲン化合物を反応させて処理をする。
特開2004−261726号公報 特開2001−79344号公報
In these decomposition treatment apparatuses, when the waste halogen-containing compound is decomposed, the reaction treatment agent (that is, the adsorbent) mainly composed of calcium oxide is reacted with the waste halogen-containing compound.
JP 2004-261726 A JP 2001-79344 A

ところで、常温大気圧下のもとで、液体となっている含ハロゲン化合物を分解処理する場合は、液体の含ハロゲン化合物をガス化して、反応管内に導入した方が好適である。
これは、含ハロゲン化合物を液体の状態のまま反応管内に供給した場合には、反応管内にある吸着剤の一部にしか供給できず、この結果、分解反応の偏りが生じて含ハロゲン化合物を充分に分解処理できなくなる虞があるからである。
By the way, when decomposing a halogen-containing compound that is in a liquid state under normal temperature and atmospheric pressure, it is preferable to gasify the liquid halogen-containing compound and introduce it into the reaction tube.
This is because when a halogen-containing compound is supplied in a liquid state into the reaction tube, it can be supplied only to a part of the adsorbent in the reaction tube. This is because there is a possibility that it cannot be sufficiently decomposed.

しかし、液体の含ハロゲン化合物は、大気圧下で0℃未満の沸点を有する含ハロゲン化合物よりも沸点が高いため、加熱等により気化しても、被処理ガスが通過する管路の外部環境の温度(例えば、冬場)により容易に凝縮して再液化してしまい、反応管内に含ハロゲン化合物を安定して定量的に供給することができなくなる。この結果、反応管内で好適に被処理ガスの分解処理を行うことができなくなる問題があった。   However, since the liquid halogen-containing compound has a higher boiling point than the halogen-containing compound having a boiling point of less than 0 ° C. under atmospheric pressure, the external environment of the pipeline through which the gas to be treated passes even if vaporized by heating or the like. It easily condenses and reliquefies depending on the temperature (for example, in winter), and the halogen-containing compound cannot be stably and quantitatively supplied into the reaction tube. As a result, there is a problem that it becomes impossible to perform the decomposition treatment of the gas to be treated in the reaction tube.

又、液体の含ハロゲン化合物を分解処理する際に、ガス化した含ハロゲン化合物を、温度に応じて可変定量的に分解処理装置内に供給するのが好適である。
これは、分解処理装置の反応管内では、被処理ガスは吸着剤等に対しては発熱反応で分解されるが、反応管内で分解反応に与る被処理ガスが少なくなれば、発熱も少なくなるため、反応管内の温度が下がる。このような場合、必要以上に反応管内の温度を下げないために、反応管内に定量的に送っている被処理ガスの量を増加させる。又、反対に、反応管内で分解反応に与る被処理ガスが多くなれば、発熱が多くなるため、反応管内の温度が上がる。このような場合、必要以上に反応管内の温度を上げさせないために、反応管内に定量的に送っている被処理ガスの量を減少させる。
Further, when the liquid halogen-containing compound is decomposed, it is preferable to supply the gasified halogen-containing compound into the decomposition processing apparatus variably and quantitatively according to the temperature.
This is because the gas to be treated is decomposed by an exothermic reaction with respect to the adsorbent or the like in the reaction tube of the decomposition treatment apparatus, but if the gas to be treated for the decomposition reaction in the reaction tube decreases, the heat generation also decreases. Therefore, the temperature in the reaction tube decreases. In such a case, in order not to lower the temperature in the reaction tube more than necessary, the amount of the gas to be treated that is quantitatively sent into the reaction tube is increased. On the other hand, if the amount of gas to be subjected to the decomposition reaction in the reaction tube increases, heat generation increases, and the temperature in the reaction tube increases. In such a case, in order not to raise the temperature in the reaction tube more than necessary, the amount of the gas to be processed quantitatively sent into the reaction tube is reduced.

このように、被処理ガスが処理される状況によって反応管内の温度が変わる場合、それに応じて、反応管内に送出する含ハロゲン化合物の供給量を変えるのが望ましい。しかし、従来は反応管内の温度に応じて可変定量的にガス化した含ハロゲン化合物を反応管に供給する分解処理装置は提案されていない。   As described above, when the temperature in the reaction tube changes depending on the situation where the gas to be processed is processed, it is desirable to change the supply amount of the halogen-containing compound delivered into the reaction tube accordingly. However, conventionally, no decomposition treatment apparatus has been proposed that supplies a halogen-containing compound that is gasified in a variable and quantitative manner according to the temperature in the reaction tube to the reaction tube.

本発明の目的は、液体の含ハロゲン化合物をガス化した場合に、ガス化した含ハロゲン化合物が再液化することなく、安定して含ハロゲン化合物を含む被処理ガスを反応管内に供給することができる分解処理装置に対する被処理ガスの送出方法及び分解処理装置を提供することにある。   An object of the present invention is to stably supply a gas to be treated containing a halogen-containing compound into a reaction tube without re-liquefying the gasified halogen-containing compound when the liquid halogen-containing compound is gasified. Another object of the present invention is to provide a method for delivering a gas to be processed and a decomposition processing apparatus.

さらに、本発明の他の目的は、反応管内の温度に応じて含ハロゲン化合物を含む被処理ガスを可変定量して供給できるとともに、ガス化した含ハロゲン化合物が再液化することなく、安定して反応管内に供給することができる分解処理装置に対する被処理ガスの送出方法及び分解処理装置を提供することにある。   Furthermore, another object of the present invention is to variably supply a gas to be treated containing a halogen-containing compound according to the temperature in the reaction tube and to stably supply the gasified halogen-containing compound without reliquefaction. An object of the present invention is to provide a method for delivering a gas to be processed to a decomposition processing apparatus that can be supplied into a reaction tube, and a decomposition processing apparatus.

上記問題点を解決するために、請求項1に記載の発明は、液体の含ハロゲン化合物をガス化した被処理ガスを分解処理装置の反応管に送出して、該反応管内で前記含ハロゲン化合物の分解処理を行う分解処理装置に対する被処理ガスの送出方法であって、前記含ハロゲン化合物の分圧を、前記被処理ガスが通過する管路における温度の飽和蒸気圧以下にして、前記含ハロゲン化合物を含む被処理ガスを反応管に送出することを特徴とする分解処理装置に対する被処理ガスの送出方法を要旨とするものである。なお、本願発明での液体の含ハロゲン化合物とは、大気圧下で、0℃以上の沸点を有する含ハロゲン化合物をいう。例えば常温常圧で液体となる含ハロゲン化合物を含む趣旨である。   In order to solve the above-mentioned problems, the invention described in claim 1 is characterized in that a gas to be treated obtained by gasifying a liquid halogen-containing compound is sent to a reaction tube of a decomposition treatment apparatus, and the halogen-containing compound is sent into the reaction tube. A process gas delivery method to a decomposition processing apparatus for performing a decomposition process of the above, wherein a partial pressure of the halogen-containing compound is set to be equal to or lower than a saturated vapor pressure of a temperature in a pipeline through which the gas to be processed passes. The gist of the present invention is a method for delivering a gas to be treated to a decomposition treatment apparatus characterized by delivering a gas to be treated containing a compound to a reaction tube. The liquid halogen-containing compound in the present invention refers to a halogen-containing compound having a boiling point of 0 ° C. or higher under atmospheric pressure. For example, it is intended to include a halogen-containing compound that becomes liquid at normal temperature and pressure.

請求項2の発明は、液体の含ハロゲン化合物をガス化した被処理ガスを分解処理装置の反応管に送出して、該反応管内で前記含ハロゲン化合物の分解処理を行う分解処理装置に対する被処理ガスの送出方法であって、前記被処理ガスを、前記反応管内の温度に応じて可変定量で送出するとともに、前記反応管内に送出される含ハロゲン化合物の分圧を飽和蒸気圧以下にすることを特徴とする分解処理装置に対する被処理ガスの送出方法を要旨とするものである。   According to a second aspect of the present invention, a gas to be treated obtained by gasifying a liquid halogen-containing compound is sent to a reaction tube of a decomposition treatment apparatus, and the decomposition treatment apparatus for decomposing the halogen-containing compound in the reaction tube is treated. A gas delivery method, wherein the gas to be treated is delivered in a variable amount according to the temperature in the reaction tube, and the partial pressure of the halogen-containing compound delivered into the reaction tube is set to a saturated vapor pressure or less. The gist of the method for delivering the gas to be processed to the decomposition processing apparatus characterized by the above.

請求項3の発明は、液体の含ハロゲン化合物をガス化した被処理ガスを分解処理装置の反応管に送出して、該反応管内で前記含ハロゲン化合物の分解処理を行う分解処理装置に対する被処理ガスの送出方法であって、前記被処理ガスを、定量で送出するとともに、前記反応管内に送出される含ハロゲン化合物の分圧を、前記被処理ガスが通過する管路における温度の飽和蒸気圧以下にすることを特徴とする分解処理装置に対する被処理ガスの送出方法を要旨とするものである。   According to a third aspect of the present invention, a gas to be treated obtained by gasifying a liquid halogen-containing compound is sent to a reaction tube of a decomposition treatment apparatus, and the decomposition treatment apparatus for decomposing the halogen-containing compound in the reaction tube is treated. A gas delivery method, wherein the gas to be treated is sent in a fixed amount, and the partial pressure of the halogen-containing compound delivered into the reaction tube is a saturated vapor pressure of a temperature in a pipe line through which the gas to be treated passes. The gist of the present invention is to supply a gas to be processed to a decomposition processing apparatus characterized by the following.

請求項4の発明は、請求項1乃至請求項3のうちいずれか1項において、前記反応管内に送出される含ハロゲン化合物の分圧を飽和蒸気圧以下にする際、被処理ガスに対してキャリアガスを注入することにより前記含ハロゲン化合物の分圧を、前記被処理ガスが通過する管路における温度の飽和蒸気圧以下にするものである。   According to a fourth aspect of the present invention, in any one of the first to third aspects, when the partial pressure of the halogen-containing compound delivered into the reaction tube is set to be equal to or lower than the saturated vapor pressure, By injecting a carrier gas, the partial pressure of the halogen-containing compound is made equal to or lower than the saturated vapor pressure of the temperature in the pipe line through which the gas to be treated passes.

請求項5の発明は、液体の含ハロゲン化合物をガス化した被処理ガスが反応管に導入されて、該反応管内で前記含ハロゲン化合物の分解処理が行われる分解処理装置において、前記反応管の上流に、前記含ハロゲン化合物の分圧を、前記被処理ガスが通過する管路における温度の飽和蒸気圧以下にする分圧設定装置が設けられていることを特徴とする分解処理装置を要旨とするものである。   According to a fifth aspect of the present invention, there is provided a decomposition treatment apparatus in which a gas to be treated obtained by gasifying a liquid halogen-containing compound is introduced into a reaction tube, and the halogen-containing compound is decomposed in the reaction tube. In summary, the decomposition treatment apparatus is characterized in that a partial pressure setting device is provided upstream, wherein a partial pressure of the halogen-containing compound is set to be equal to or lower than a saturated vapor pressure of a temperature in a pipeline through which the gas to be treated passes. To do.

請求項6の発明は、請求項5において、前記反応管内の温度に応じて、前記反応管に対し液体の含ハロゲン化合物をガス化した前記被処理ガスを可変定量可能に送出する可変定量送出手段を備え、前記分圧設定装置が前記可変定量送出手段と前記反応管の間の管路に設けられていることを特徴とする。   According to a sixth aspect of the present invention, in the fifth aspect, the variable quantitative sending means for sending the gas to be treated gasified from the liquid halogen-containing compound to the reaction tube in a variable quantitative manner according to the temperature in the reaction tube. And the partial pressure setting device is provided in a conduit between the variable quantitative delivery means and the reaction tube.

請求項7の発明は、請求項5において、前記反応管に対し前記被処理ガスを定量可能に送出する定量送出手段を備え、前記分圧設定装置が前記定量送出手段と前記反応管の間の管路に設けられていることを特徴とする。   A seventh aspect of the present invention is the method according to the fifth aspect, further comprising a fixed amount sending means for sending the gas to be treated to the reaction tube in a quantifiable manner, wherein the partial pressure setting device is provided between the fixed amount sending means and the reaction tube. It is provided in the pipeline.

請求項8の発明は、請求項5乃至請求項7のうちいずれか1項において、前記分圧設定装置が、前記被処理ガスに対してキャリアガスを注入することにより前記含ハロゲン化合物の分圧を、前記被処理ガスが通過する管路における温度の飽和蒸気圧以下にするものである。   According to an eighth aspect of the present invention, in any one of the fifth to seventh aspects, the partial pressure setting device injects a carrier gas into the gas to be treated, thereby dividing the partial pressure of the halogen-containing compound. Is equal to or lower than the saturated vapor pressure of the temperature in the pipeline through which the gas to be treated passes.

請求項1、3及び請求項5、7の発明によれば、液体の含ハロゲン化合物をガス化した場合に、ガス化した含ハロゲン化合物が再液化することなく、安定して含ハロゲン化合物を含む被処理ガスを反応管内に供給することができる効果を奏する。   According to the inventions of claims 1, 3 and 5, 7, when a liquid halogen-containing compound is gasified, the gasified halogen-containing compound stably contains the halogen-containing compound without reliquefaction. There is an effect that the gas to be processed can be supplied into the reaction tube.

又、請求項2及び請求項6の発明によれば、反応管の温度に応じて含ハロゲン化合物を含む被処理ガスを可変定量して供給できるとともに、ガス化した含ハロゲン化合物が再液化することなく、安定して反応管内に供給することができる。   Further, according to the inventions of claim 2 and claim 6, the gas to be treated containing the halogen-containing compound can be variably supplied depending on the temperature of the reaction tube, and the gasified halogen-containing compound can be reliquefied. And can be stably fed into the reaction tube.

請求項4及び請求項8の発明によれば、被処理ガスに対してキャリアガスを注入することにより、含ハロゲン化合物の分圧を飽和蒸気圧以下に容易に実現することができる。   According to the fourth and eighth aspects of the invention, the partial pressure of the halogen-containing compound can be easily realized below the saturated vapor pressure by injecting the carrier gas into the gas to be treated.

以下、本発明を具体化した実施形態を図1を参照して説明する。図1には含ハロゲン化合物の分解処理装置及び被処理ガスの供給路の概略図を示している。
図1に示すように、キャリアガスボンベ70には、キャリアガスが貯蔵され、キャリアガスボンベ70からキャリアガスが管路84に設けられたレギュレータ72を介して、貯蔵ボンベ74に注入される。本実施形態では、キャリアガスは窒素ガスとしているが、アルゴンガス等の不活性ガスであってもよい。貯蔵ボンベ74には、0℃以上、かつ大気圧下で液体となる含ハロゲン化合物が貯蔵されている。本実施形態では、貯蔵ボンベ74には含ハロゲン化合物としてハロン2402がされている。又、キャリアガスボンベ70から供給されたキャリアガスにより、液体の含ハロゲン化合物の一部がガス化されて貯蔵ボンベ74から、管路84の温度における飽和蒸気圧以下の分圧で送出される。又、レギュレータ72と貯蔵ボンベ74との間には開閉バルブ72aが設けられている。
Hereinafter, an embodiment of the present invention will be described with reference to FIG. FIG. 1 shows a schematic diagram of a halogen-containing compound decomposition treatment apparatus and a gas supply passage.
As shown in FIG. 1, a carrier gas is stored in the carrier gas cylinder 70, and the carrier gas is injected from the carrier gas cylinder 70 into the storage cylinder 74 through a regulator 72 provided in a pipe line 84. In the present embodiment, the carrier gas is nitrogen gas, but may be an inert gas such as argon gas. The storage cylinder 74 stores a halogen-containing compound that becomes liquid at 0 ° C. or higher and atmospheric pressure. In the present embodiment, the storage cylinder 74 has halon 2402 as a halogen-containing compound. Further, a part of the liquid halogen-containing compound is gasified by the carrier gas supplied from the carrier gas cylinder 70 and is sent out from the storage cylinder 74 at a partial pressure equal to or lower than the saturated vapor pressure at the temperature of the pipe 84. An open / close valve 72 a is provided between the regulator 72 and the storage cylinder 74.

貯蔵ボンベ74から送出された含ハロゲン化合物のガス(以下、キャリアガス及び含ハロゲン化合物を含むガスを被処理ガスという)は、チュービングポンプ78にて分解処理装置10に送出される。チュービングポンプ78は、一定時間に一定量のガスを送出可能であり、時間当たりの回転量が変更されることにより、可変定量ポンプとして作用する。チュービングポンプ78は可変定量送出手段に相当する。   A halogen-containing compound gas sent from the storage cylinder 74 (hereinafter, a gas containing a carrier gas and a halogen-containing compound is referred to as a gas to be treated) is sent to the decomposition processing apparatus 10 by a tubing pump 78. The tubing pump 78 can deliver a certain amount of gas at a certain time and acts as a variable metering pump by changing the amount of rotation per time. The tubing pump 78 corresponds to a variable quantitative delivery means.

制御装置80は、後述する分解処理装置10における反応管20内の反応帯26の温度を検出する温度センサ82の検出値に基づいて、チュービングポンプ78の時間当たりの回転量を可変制御する。制御装置80は、反応管内の温度に応じて、可変定量送出手段を、該反応管に対し液体の含ハロゲン化合物をガス化した被処理ガスを可変定量可能に制御する制御手段に相当する。   The control device 80 variably controls the amount of rotation per hour of the tubing pump 78 based on the detected value of the temperature sensor 82 that detects the temperature of the reaction zone 26 in the reaction tube 20 in the decomposition processing device 10 described later. The control device 80 corresponds to a control unit that controls the variable fixed amount sending means according to the temperature in the reaction tube so that the gas to be treated in which the liquid halogen-containing compound is gasified can be variably quantified in the reaction tube.

貯蔵ボンベ74とチュービングポンプ78との間には、開閉バルブ76が設けられている。チュービングポンプ78と分解処理装置10間の管路84には、開閉バルブ86が設けられるとともに、ブロア88を介してキャリアガスとしての分圧調整用エアが注入される。前記ブロア88、及び管路84に分圧調整用エアを注入する注入管89により分圧設定装置90が構成されている。なお、ブロア88はの代わりにファンであってもよい。   An open / close valve 76 is provided between the storage cylinder 74 and the tubing pump 78. An opening / closing valve 86 is provided in the pipe line 84 between the tubing pump 78 and the decomposition processing apparatus 10, and partial pressure adjusting air as a carrier gas is injected through a blower 88. A partial pressure setting device 90 is constituted by the blower 88 and the injection pipe 89 for injecting partial pressure adjusting air into the pipe 84. The blower 88 may be a fan instead of the blower 88.

ここで、ブロア88にて注入される分圧調整用エアによる分圧調整について説明する。
前述したようにチュービングポンプ78は、可変定量ポンプであるため、一定時間当たりに送出される被処理ガスの定量は、後述する反応管20の温度に応じて可変となる。この場合、管路84の温度が一定の場合において、前記定量が最大値となる場合は最小値となる場合よりも、チュービングポンプ78から送出される含ハロゲン化合物の分圧は大きい。
Here, the partial pressure adjustment by the partial pressure adjusting air injected by the blower 88 will be described.
As described above, since the tubing pump 78 is a variable metering pump, the metering of the gas to be processed that is delivered per fixed time is variable according to the temperature of the reaction tube 20 described later. In this case, when the temperature of the pipe 84 is constant, the partial pressure of the halogen-containing compound delivered from the tubing pump 78 is larger when the fixed value reaches the maximum value than when the fixed value reaches the minimum value.

一方、飽和蒸気圧は、温度が上昇すれば高くなり、温度が低下すれば低下することから、管路84が外部環境の温度によって低下すれば、含ハロゲン化合物の飽和蒸気圧も低下する。   On the other hand, the saturated vapor pressure increases as the temperature increases, and decreases as the temperature decreases. Therefore, if the conduit 84 decreases due to the temperature of the external environment, the saturated vapor pressure of the halogen-containing compound also decreases.

このため、チュービングポンプ78の定量が最大となって含ハロゲン化合物の分圧が大きくなり、かつ、含ハロゲン化合物の飽和蒸気圧が低下する管路84の温度が低い場合において、ガス化した含ハロゲン化合物が再液化する可能性がある。   For this reason, the gasified halogen-containing halogenated compound is obtained when the quantification of the tubing pump 78 is maximized to increase the partial pressure of the halogen-containing compound and the temperature of the pipe 84 at which the saturated vapor pressure of the halogen-containing compound decreases is low. The compound may re-liquefy.

そこで、本実施形態では、分解処理装置10に接続される管路84の外部環境の温度変化が予めマージンをとって予測されている。そして、この温度変化の最小値(最低温度)において、かつ、チュービングポンプ78の最大の定量となるように駆動された際においても、含ハロゲン化合物の飽和蒸気圧以下に含ハロゲン化合物の分圧がなるように、ブロア88により供給される分圧調整用エアの供給量が設定されている。なお、本実施形態ではブロア88にて注入される分圧調整用エアの注入量は固定されている。   Therefore, in this embodiment, the temperature change in the external environment of the pipe line 84 connected to the decomposition processing apparatus 10 is predicted with a margin in advance. Even when the tube pump 78 is driven at the minimum value (minimum temperature) of the temperature change and the maximum quantification, the partial pressure of the halogen-containing compound is less than the saturated vapor pressure of the halogen-containing compound. Thus, the supply amount of the partial pressure adjustment air supplied by the blower 88 is set. In the present embodiment, the injection amount of the partial pressure adjusting air injected by the blower 88 is fixed.

なお、ここで前記最低温度とは、管路84は冬場と夏場のように外部環境によってその温度が変化するため、前記外部環境の影響により生ずる温度の最小値のことである。
このようにして、管路84に分圧調整用エアが注入されることにより、チュービングポンプ78から送出された含ハロゲン化合物の分圧がさらに低下して、管路84の温度における飽和蒸気圧以下の分圧で送出される。
Here, the minimum temperature is the minimum value of the temperature caused by the influence of the external environment because the temperature of the pipe 84 changes depending on the external environment, such as winter and summer.
In this way, when partial pressure adjusting air is injected into the pipe 84, the partial pressure of the halogen-containing compound delivered from the tubing pump 78 is further reduced to a value equal to or lower than the saturated vapor pressure at the temperature of the pipe 84. It is sent out with the partial pressure.

次に、含ハロゲン化合物の分解処理装置の概要を説明する。
分解処理装置10は、反応管20に、吸着剤からなる充填層22が形成されて、同充填層22に対して含ハロゲン化合物を含む被処理ガスが連続的に導入・導出されて、含ハロゲン化合物が分解されながら吸着剤に主として反応吸着されて接触されることにより含ハロゲン化合物の処理が行われる。
Next, an outline of the halogen-containing compound decomposition treatment apparatus will be described.
In the decomposition treatment apparatus 10, a packed bed 22 made of an adsorbent is formed in the reaction tube 20, and a gas to be treated containing a halogen-containing compound is continuously introduced into and led out from the packed bed 22, Treatment of the halogen-containing compound is carried out by contacting the adsorbent mainly by reaction adsorption while the compound is decomposed.

前記吸着剤は、カルシウム系のものが使用される。カルシウム系の吸着剤としては、石灰石やドロマイトを焼成して得られる生石灰(CaO)や軽焼ドロマイト(CaO・MgO)がある。又、カルシウム系の吸着剤としては、他に、消石灰(Ca(OH))、石灰石(炭酸カルシウム(CaCO))、けい酸カルシウム(CaSiO)等も使用可能である。又、カルシウム系の吸着剤には、軽焼ドロマイト(CaO・MgO)のように酸化マグネシウムを含んでいても良い。本実施形態では、吸着剤として、生石灰(CaO)や軽焼ドロマイト(CaO・MgO)を使用する。 A calcium-based adsorbent is used. Examples of the calcium-based adsorbent include quick lime (CaO) obtained by firing limestone and dolomite and light-burned dolomite (CaO · MgO). In addition, slaked lime (Ca (OH) 2 ), limestone (calcium carbonate (CaCO 3 )), calcium silicate (CaSiO 3 ) and the like can also be used as the calcium-based adsorbent. Further, the calcium-based adsorbent may contain magnesium oxide such as lightly burned dolomite (CaO · MgO). In this embodiment, quick lime (CaO) or light-burned dolomite (CaO · MgO) is used as the adsorbent.

前記吸着剤の粒径は、粒子形状により異なるが、通常2〜50mm、望ましくは5〜10mmが好適である。なお、粒径が小さすぎると、充填層22(ガス拡散帯、反応帯)の空隙率が低くてガス流れが阻害され、反対に、粒径が大きすぎると、粒子内へのガス拡散が不充分である。   The particle size of the adsorbent varies depending on the particle shape, but is usually 2 to 50 mm, preferably 5 to 10 mm. If the particle size is too small, the porosity of the packed bed 22 (gas diffusion zone, reaction zone) is low and gas flow is hindered. Conversely, if the particle size is too large, gas diffusion into the particle is not possible. It is enough.

又、分解処理装置10により分解処理される被処理ガスは、フロン類、ハロン類を含む含ハロゲン化合物である。なお、本実施形態では、前述したように、含ハロゲン化合物としてハロン2402(沸点47℃)を使用するが、他のハロン類であってもよい。さらに、液体の含ハロゲン化合物として、例えば、フロン類としては、フロン-11(沸点23.8℃),フロン-113(沸点47.6℃)の特定フロン類や、HCFC-123(沸点27.9℃)、HCFC-141b(沸点32.2℃)、HCFC-225cb(沸点56.1℃)のHCFC(ハイドロクロロフルオロカーボン)がある。又、液体の含ハロゲン化合物としてフロン類の他の例としては、HFC-43-10mes(沸点55.0℃)、HFC-245fa(沸点15.3℃)、HFC-365mfc(沸点40.2℃)のHFC(ハイドロフルオロカーボン)や、C5F12(沸点30.0℃)、C6F14(沸点56.0℃)のPFC(パラフルオロカーボン)等が挙げられる。なお、前記各含ハロゲン化合物の沸点は大気圧下のものである。   Further, the gas to be processed that is decomposed by the decomposition processing apparatus 10 is a halogen-containing compound containing chlorofluorocarbons and halones. In this embodiment, as described above, Halon 2402 (boiling point 47 ° C.) is used as the halogen-containing compound, but other halons may be used. Further, as liquid halogen-containing compounds, for example, chlorofluorocarbons include chlorofluorocarbon-11 (boiling point 23.8 ° C.), chlorofluorocarbon-113 (boiling point 47.6 ° C.), HCFC-123 (boiling point 27.degree. C.). 9 ° C.), HCFC-141b (boiling point 32.2 ° C.), HCFC-225cb (boiling point 56.1 ° C.), and HCFC (hydrochlorofluorocarbon). Other examples of chlorofluorocarbons as liquid halogen-containing compounds include HFC-43-10mes (boiling point 55.0 ° C), HFC-245fa (boiling point 15.3 ° C), HFC-365mfc (boiling point 40.2 ° C). ) HFC (hydrofluorocarbon), C5F12 (boiling point 30.0 ° C.), C6F14 (boiling point 56.0 ° C.) PFC (parafluorocarbon), and the like. In addition, the boiling point of each said halogen-containing compound is a thing under atmospheric pressure.

これらのガス濃度は、10〜100vol%が好ましく、30〜100vol%がさらに好ましい。なお、濃度が10vol%未満であると、加熱する際に多くのエネルギーを必要とするため好ましくない。   These gas concentrations are preferably 10 to 100 vol%, more preferably 30 to 100 vol%. In addition, it is not preferable that the concentration is less than 10 vol% because a large amount of energy is required for heating.

フロン類、及びハロン類の分解処理は、好ましくは、700〜1400℃の温度下で吸着剤に接触させることによって行われる。この温度が700℃未満であると、分解処理能力が低下する。1400℃を越えると、フロン類、及びハロン類との反応性が低下するため好ましくない。なお、フロン類、及びハロン類の分解処理は、公知の発熱反応を伴う。   The decomposition treatment of chlorofluorocarbons and halones is preferably performed by contacting with an adsorbent at a temperature of 700 to 1400 ° C. When this temperature is lower than 700 ° C., the decomposition treatment capacity is lowered. If it exceeds 1400 ° C., the reactivity with chlorofluorocarbons and halones is lowered, which is not preferable. The decomposition treatment of chlorofluorocarbons and halones is accompanied by a known exothermic reaction.

本実施形態の反応管20は垂直立て型とされ、前記充填層22がガス拡散帯24と反応帯26が上下に形成される。反応管20の上部は、第1冷却手段28が形成され、同第1冷却手段28の上方には、投入口30を有する吸着剤供給ホッパ32が配置されている。前記第1冷却手段28は、反応管20のガス拡散帯24の対応部位に配置されている。又、反応管20において、第1冷却手段28の上方の位置には、管路84に接続された被処理ガス導入口34が設けられている。   The reaction tube 20 of the present embodiment is a vertical type, and the packed bed 22 is formed with a gas diffusion zone 24 and a reaction zone 26 vertically. A first cooling means 28 is formed in the upper part of the reaction tube 20, and an adsorbent supply hopper 32 having an inlet 30 is disposed above the first cooling means 28. The first cooling means 28 is disposed at a corresponding portion of the gas diffusion zone 24 of the reaction tube 20. In the reaction tube 20, a gas inlet 34 to be processed connected to a pipe 84 is provided at a position above the first cooling means 28.

反応管20の反応帯26対応部位には加熱部としての電熱ヒータH1、H2が設けられている。電熱ヒータH1,H2は、図示しない制御手段で出力制御可能となっている。加熱手段としては、電熱ヒータ(抵抗発熱体)に限らず、誘導加熱等の他の電気加熱手段あるいは燃焼加熱等の火力加熱手段であってもよい。電熱ヒータH1は、反応管20の外面に設けられた筒状電熱ヒータからなる。電熱ヒータH2は、反応帯26対応部位のみ加熱部とされたシーズドヒータ(電熱ヒータ)からなる。なお、電熱ヒータH1、H2を反応管20の反応帯26の内外に設けるのは、反応帯26の横断面内外の温度差を小さくするためである。ここで、反応管20の外部に設けられる加熱手段のみ、又は反応管20の内部に設けられる加熱手段のみ設けられていてもよく、或いは、反応管20の内部に設けられる加熱手段が複数設けられていてもよい。   Electric heaters H1 and H2 serving as heating portions are provided at portions corresponding to the reaction zone 26 of the reaction tube 20. The electric heaters H1 and H2 can be output controlled by a control means (not shown). The heating means is not limited to an electric heater (resistance heating element), but may be other electric heating means such as induction heating or thermal heating means such as combustion heating. The electric heater H <b> 1 is a cylindrical electric heater provided on the outer surface of the reaction tube 20. The electric heater H2 is a seeded heater (electric heater) in which only the part corresponding to the reaction zone 26 is a heating part. The reason why the electric heaters H1 and H2 are provided inside and outside the reaction zone 26 of the reaction tube 20 is to reduce the temperature difference between inside and outside the cross section of the reaction zone 26. Here, only the heating means provided outside the reaction tube 20 or only the heating means provided inside the reaction tube 20 may be provided, or a plurality of heating means provided inside the reaction tube 20 may be provided. It may be.

反応帯26に対応する反応管20の下部は下方に延びる導管36として設けられている。導管36の外周には、筒状の覆い管38が配置されている。覆い管38と導管36との間には、空隙38aが設けられていて、導管36の下部開口から排出されるガスを案内して、覆い管38に設けられた被処理ガス導出口40から排出する。被処理ガス導出口40には、図示しないが、例えば、集塵槽等の所要の後処理設備に接続されている。そして、覆い管38の外周には第2冷却手段としての水冷ジャケット42が設けられている。   The lower part of the reaction tube 20 corresponding to the reaction zone 26 is provided as a conduit 36 extending downward. A cylindrical covering tube 38 is disposed on the outer periphery of the conduit 36. A gap 38 a is provided between the cover tube 38 and the conduit 36, guides the gas discharged from the lower opening of the conduit 36, and discharges from the gas outlet 40 to be processed provided in the cover tube 38. To do. Although not shown, the gas to be processed outlet 40 is connected to necessary post-processing equipment such as a dust collection tank. A water cooling jacket 42 as a second cooling means is provided on the outer periphery of the cover tube 38.

そして、被処理ガス導入口34と被処理ガス導出口40との一方側又は双方側には、ガス流れを吸引により発生させるために、差圧発生手段として図示しないブロアが設けられている。差圧発生手段は、通常、加圧輸送機となる送風機(ファン、ブロア)又は減圧輸送機となる圧縮機(コンプレッサ)を、適宜、要求処理量、反応管20の吸着剤の充填密度に対応させて適宜選定すればよい。   A blower (not shown) is provided as a differential pressure generating means on one side or both sides of the processing gas inlet 34 and the processing gas outlet 40 so as to generate a gas flow by suction. The differential pressure generating means usually corresponds to the required processing amount and the packing density of the adsorbent in the reaction tube 20 by appropriately using a blower (fan, blower) serving as a pressurized transporter or a compressor (compressor) serving as a decompression transporter. And select as appropriate.

又、導管36は、反応管20の下部の充填層22を下方に配置された吸着剤排出機構44に導く。
吸着剤排出機構44は、例えば強制排出手段としてスクリューコンベヤ46から構成され、強制排出手段の吸着剤流入口側と、反応管20の下端側(吸着剤流出口)との間には、吸着剤が移動する前記覆い管38が配置されている。
Further, the conduit 36 guides the packed bed 22 below the reaction tube 20 to the adsorbent discharge mechanism 44 disposed below.
The adsorbent discharge mechanism 44 includes, for example, a screw conveyor 46 as forced discharge means, and the adsorbent is disposed between the adsorbent inlet side of the forced discharge means and the lower end side (adsorbent outlet) of the reaction tube 20. The covering tube 38 to which is moved is arranged.

覆い管38及び導管36は、水冷ジャケット42により反応管20の下端側から流出(流下)してきた吸着剤を冷却する作用を奏して吸着剤冷却帯48を形成する。
なお、この吸着剤冷却帯48は、スクリューコンベヤ46等の強制排出手段と協働して、強制排出手段の出口50を介しての被処理ガス導出口40との間のガス流れを絞る作用も奏する。被処理ガス導出口40と強制排出手段の出口50との間に、流体流れの圧損を発生させる吸着剤充填部が形成されるためである。この作用により、被処理ガス導入口34から被処理ガス導出口40への被処理ガスの流れが円滑となる。
The cover tube 38 and the conduit 36 act to cool the adsorbent that has flowed out (flowed down) from the lower end side of the reaction tube 20 by the water cooling jacket 42 to form an adsorbent cooling zone 48.
In addition, this adsorbent cooling zone 48 cooperates with forced discharge means such as the screw conveyor 46, and also has an action of restricting the gas flow between the gas discharge port 40 and the processing target gas outlet 40 through the outlet 50 of the forced discharge means. Play. This is because an adsorbent filling portion that generates a pressure loss of the fluid flow is formed between the gas outlet 40 and the outlet 50 of the forced discharge means. By this action, the flow of the gas to be processed from the gas to be processed inlet 34 to the gas outlet 40 to be processed becomes smooth.

次に、含ハロゲン化合物の分解処理装置10の分解処理について説明する。
まず、スクリューコンベヤ46を停止させた状態で、吸着剤供給ホッパ32内に投入口30から、覆い管38の下部内及び反応管20内を吸着剤にて充填し、さらに、吸着剤供給ホッパ32が略一杯になるまで吸着剤を投入する。
Next, the decomposition process of the halogen-containing compound decomposition apparatus 10 will be described.
First, in a state where the screw conveyor 46 is stopped, the adsorbent supply hopper 32 is filled with the adsorbent in the lower part of the cover tube 38 and the reaction tube 20 from the charging port 30, and the adsorbent supply hopper 32 is further filled. Add the adsorbent until is almost full.

次に、電熱ヒータH1,H2をオン(ON)として、反応帯26の内部雰囲気温度を、含ハロゲン化合物の分解反応温度以上となるまで昇温させ維持する。ここで、分解反応温度の設定温度は、分解反応、すなわち、効率の見地から、通常、700℃以上とする。そして、上限は、熱効率及び化学平衡の見地から、約1400℃以下、望ましくは900℃以下とする。   Next, the electric heaters H1 and H2 are turned on (ON), and the internal atmospheric temperature of the reaction zone 26 is raised and maintained until the temperature exceeds the decomposition reaction temperature of the halogen-containing compound. Here, the set temperature of the decomposition reaction temperature is usually 700 ° C. or more from the viewpoint of decomposition reaction, that is, efficiency. The upper limit is about 1400 ° C. or less, preferably 900 ° C. or less, from the viewpoint of thermal efficiency and chemical equilibrium.

ここで、当該設定温度は、反応帯26の略中央部位置、例えば、図1のD点ないしE点におけるものとする。
そして、通常、第1冷却手段28を備えたガス拡散帯24は、分解反応温度未満である。ここで、ガス拡散帯24は、通常、分解反応温度より格段に低い温度、高くて200℃以下、通常100℃以下の温度雰囲気になっている(例えば、図1のB点)。これは、ガス拡散帯24を形成する吸着剤の充填層22の熱伝導率が非常に低く、反応帯26の温度影響を受け難いためである。
Here, the set temperature is assumed to be at a substantially central position of the reaction zone 26, for example, at point D to point E in FIG.
And normally, the gas diffusion zone 24 provided with the 1st cooling means 28 is less than decomposition reaction temperature. Here, the gas diffusion zone 24 is usually at a temperature much lower than the decomposition reaction temperature, which is at most 200 ° C. and usually 100 ° C. (for example, point B in FIG. 1). This is because the adsorbent packed bed 22 forming the gas diffusion zone 24 has a very low thermal conductivity and is not easily affected by the temperature of the reaction zone 26.

この状態で、図示しないブロアを運転させると、含ハロゲン化合物は、被処理ガス導入口34から反応管20の充填層22内へ吸引導入される。すると、被処理ガス導入口34から吸引導入された被処理ガスは、ガス拡散帯24で拡散されながら反応帯26ヘ輸送(搬送)される。このとき、ガス拡散帯24における吸着剤の雰囲気温度は、被処理ガスの分解反応温度未満である。このため、被処理ガスは、吸着剤の充填隙間で拡散されながら反応帯26に移動する。   When a blower (not shown) is operated in this state, the halogen-containing compound is sucked and introduced into the packed bed 22 of the reaction tube 20 from the gas inlet 34 to be processed. Then, the gas to be treated sucked and introduced from the gas to be treated inlet 34 is transported (conveyed) to the reaction zone 26 while being diffused in the gas diffusion zone 24. At this time, the ambient temperature of the adsorbent in the gas diffusion zone 24 is lower than the decomposition reaction temperature of the gas to be processed. Therefore, the gas to be treated moves to the reaction zone 26 while being diffused in the adsorbent filling gap.

反応帯26に到達した被処理ガスは、反応帯26で、分解後、吸着剤に反応吸着されてハロゲン成分が除去された排ガスとして被処理ガス導出口40から排出される。
なお、ガス拡散帯24の反応帯26との境界部には、温度傾斜ゾーン(例えば、100℃以上600℃未満)である移行帯(中間帯)が存在する。
The treated gas that has reached the reaction zone 26 is discharged from the treated gas outlet 40 as an exhaust gas after being decomposed and reacted and adsorbed by the adsorbent in the reaction zone 26 to remove the halogen component.
A transition zone (intermediate zone) that is a temperature gradient zone (for example, 100 ° C. or higher and lower than 600 ° C.) exists at the boundary between the gas diffusion zone 24 and the reaction zone 26.

そして、スクリューコンベヤ46を駆動させると、反応管20内の吸着剤は重力により、下方へ徐々に移動する。導管36内の吸着剤は移動により放熱冷却される。そして、吸着反応が済んだ使用済み吸着剤は、導管36、覆い管38内で水冷ジャケット42でさらに強制冷却されて、スクリューコンベヤ46の入口に到達し、さらに、コンベヤの出口50から図示しない回収コンテナ内に落下排出される。   When the screw conveyor 46 is driven, the adsorbent in the reaction tube 20 gradually moves downward due to gravity. The adsorbent in the conduit 36 is cooled by heat dissipation by movement. The used adsorbent that has undergone the adsorption reaction is further forcibly cooled by the water cooling jacket 42 in the conduit 36 and the cover tube 38, reaches the inlet of the screw conveyor 46, and is further collected from the outlet 50 of the conveyor. Dropped into the container.

ここで、反応管20の温度である反応帯26の温度は温度センサ82により検出される。この温度センサ82の温度検出により、分解処理時に発熱反応に与る含ハロゲン化合物の量の度合いを制御装置80が判定する。   Here, the temperature of the reaction zone 26 which is the temperature of the reaction tube 20 is detected by the temperature sensor 82. Based on the temperature detection of the temperature sensor 82, the control device 80 determines the degree of the amount of the halogen-containing compound that gives an exothermic reaction during the decomposition process.

なお、反応帯26での温度は、電熱ヒータH1,H2の加熱による寄与分と、分解処理時の発熱反応よる寄与分がある。この場合、例えば、電熱ヒータH1,H2の加熱による寄与分が一定の場合、分解処理時の発熱反応の寄与分の変化が温度変化に大きく関係する。このことから、予め試験等により、電熱ヒータH1,H2のみの寄与分については、未反応状態で、温度計測しておけば、発熱反応の寄与分については、すなわち、発熱反応に与る含ハロゲン化合物の量の度合いについては判定を行うことができる。   The temperature in the reaction zone 26 includes a contribution due to heating of the electric heaters H1 and H2 and a contribution due to an exothermic reaction during the decomposition treatment. In this case, for example, when the contribution due to heating of the electric heaters H1 and H2 is constant, the change in the contribution of the exothermic reaction during the decomposition treatment is greatly related to the temperature change. From this, the contribution of only the electric heaters H1 and H2 is determined in an unreacted state by a test or the like in advance, and if the temperature is measured, the contribution of the exothermic reaction, that is, the halogen-containing effect on the exothermic reaction. A determination can be made as to the degree of the amount of the compound.

制御装置80は、この温度が予め設定された第1閾値よりも低いとい判定すれば、発熱反応に与る含ハロゲン化合物が少なく、すなわち、反応管20に送出される含ハロゲン化合物が少ないと判定して、含ハロゲン化合物の反応管20に対する送出量を多くするべくチュービングポンプ78の時間当たりの回転量を増加させる。   If the controller 80 determines that the temperature is lower than the first threshold value set in advance, the controller 80 determines that the halogen-containing compound exerted on the exothermic reaction is small, that is, the halogen-containing compound delivered to the reaction tube 20 is small. Then, the amount of rotation per hour of the tubing pump 78 is increased to increase the amount of the halogen-containing compound delivered to the reaction tube 20.

この結果、チュービングポンプ78から送出される含ハロゲン化合物の分圧が高いガスが送出される。なお、この場合において、ブロア88による分圧調整用エアの注入により、前記分圧は管路84の温度における飽和蒸気圧以下となる。   As a result, a gas having a high partial pressure of the halogen-containing compound delivered from the tubing pump 78 is delivered. In this case, the partial pressure becomes equal to or lower than the saturated vapor pressure at the temperature of the pipe line 84 due to the injection of the partial pressure adjusting air by the blower 88.

又、温度センサ82により検出された反応帯26の温度が第2閾値(>第1閾値)よりも高ければ、制御装置80は、反応管20に送出される含ハロゲン化合物が多すぎると判定して、含ハロゲン化合物の反応管20に対する送出量を少なくするべくチュービングポンプ78の時間当たりの回転量を低下させる。この結果、チュービングポンプ78から送出される含ハロゲン化合物の分圧が低いガスが送出される。なお、この場合、ブロア88による分圧調整用エアの注入により、前記分圧は管路84の温度における飽和蒸気圧以下となる。   If the temperature of the reaction zone 26 detected by the temperature sensor 82 is higher than the second threshold (> first threshold), the control device 80 determines that there are too many halogen-containing compounds delivered to the reaction tube 20. Thus, the amount of rotation per hour of the tubing pump 78 is reduced in order to reduce the amount of the halogen-containing compound delivered to the reaction tube 20. As a result, a gas having a low partial pressure of the halogen-containing compound delivered from the tubing pump 78 is delivered. In this case, the partial pressure becomes equal to or lower than the saturated vapor pressure at the temperature of the pipe line 84 due to the injection of the partial pressure adjusting air by the blower 88.

さて、本実施形態では下記の特徴がある。
(1) 本実施形態の被処理ガスの送出方法では、ハロン2402(含ハロゲン化合物)の分圧を、被処理ガスが通過する管路84における温度の飽和蒸気圧以下にして、ハロン2402を含む被処理ガスを反応管20に送出するようにした。又、本実施形態の分解処理装置10は、反応管20の上流に、ハロン2402含ハロゲン化合物の分圧を、被処理ガスが通過する管路84における温度の飽和蒸気圧以下にする分圧設定装置90が設けられている。
Now, this embodiment has the following features.
(1) In the method for delivering the gas to be processed according to this embodiment, the partial pressure of halon 2402 (halogen-containing compound) is set to be equal to or lower than the saturated vapor pressure of the temperature in the conduit 84 through which the gas to be processed passes, and the halon 2402 is included. The gas to be treated was sent out to the reaction tube 20. In the decomposition processing apparatus 10 of the present embodiment, the partial pressure setting is set so that the partial pressure of the halogen-containing compound of Halon 2402 is equal to or lower than the saturated vapor pressure of the temperature in the pipe 84 through which the gas to be processed passes upstream of the reaction tube 20. A device 90 is provided.

この結果、液体のハロン2402(含ハロゲン化合物)をガス化した場合に、ガス化したハロン2402が再液化することなく、安定してハロン2402を含む被処理ガスを反応管20内に供給することができる。   As a result, when the liquid halon 2402 (halogen-containing compound) is gasified, the gas to be treated is stably supplied into the reaction tube 20 without containing the gasified halon 2402 again. Can do.

(2) 本実施形態の被処理ガスの送出方法では、被処理ガスを、反応管20内の温度に応じて可変定量で送出するとともに、反応管20内に送出されるハロン2402(含ハロゲン化合物)の分圧を、被処理ガスが通過する管路84における温度の飽和蒸気圧以下にする。   (2) In the method for delivering the gas to be treated according to the present embodiment, the gas to be treated is sent in a variable amount according to the temperature in the reaction tube 20, and halon 2402 (halogen-containing compound) delivered into the reaction tube 20. ) Is made equal to or lower than the saturated vapor pressure of the temperature in the pipe 84 through which the gas to be treated passes.

又、上記の方法を実現するために、本実施形態の分解処理装置10は、反応管20内の温度に応じて、反応管20に対し液体のハロン2402をガス化した被処理ガスを可変定量可能に送出するチュービングポンプ78(可変定量送出手段)を備え、分圧設定装置90がチュービングポンプ78と反応管20の間の管路84に設けられている。   In order to realize the above-described method, the decomposition processing apparatus 10 according to the present embodiment variably quantifies the gas to be processed by gasifying the liquid halon 2402 in the reaction tube 20 according to the temperature in the reaction tube 20. A tubing pump 78 (variable quantitative delivery means) for delivering the fluid is provided, and a partial pressure setting device 90 is provided in a conduit 84 between the tubing pump 78 and the reaction tube 20.

この結果、反応管20の温度に応じてハロン2402を含む被処理ガスを可変定量して供給できるとともに、ガス化したハロン2402が再液化することなく、安定して反応管20内に供給することができる。   As a result, the gas to be processed including halon 2402 can be variably quantified and supplied according to the temperature of the reaction tube 20, and the gasified halon 2402 can be stably supplied into the reaction tube 20 without being liquefied again. Can do.

(3) 本実施形態の被処理ガスの送出方法では、反応管20内に送出されるハロン2402の分圧を飽和蒸気圧以下にする際、被処理ガスに対して分圧調整用エア(キャリアガス)を注入することによりハロン2402の分圧を、被処理ガスが通過する管路84における温度の飽和蒸気圧以下にする。   (3) In the method for delivering the gas to be treated according to the present embodiment, when the partial pressure of the halon 2402 delivered into the reaction tube 20 is made equal to or lower than the saturated vapor pressure, the partial pressure adjusting air (carrier) By injecting the gas), the partial pressure of the halon 2402 is made to be equal to or lower than the saturated vapor pressure of the temperature in the pipe 84 through which the gas to be processed passes.

又、上記被処理ガスの送出方法を実現するために、本実施形態の分解処理装置10では、分圧設定装置90が、被処理ガスに対して分圧調整用エア(キャリアガス)を注入することによりハロン2402の分圧を、被処理ガスが通過する管路84における温度の飽和蒸気圧以下にする。   In order to realize the method for delivering the gas to be processed, in the decomposition processing apparatus 10 of this embodiment, the partial pressure setting device 90 injects partial pressure adjusting air (carrier gas) into the gas to be processed. As a result, the partial pressure of the halon 2402 is made equal to or lower than the saturated vapor pressure of the temperature in the pipe 84 through which the gas to be processed passes.

この結果、被処理ガスに対して分圧調整用エア(キャリアガス)を注入することにより、ハロン2402の分圧を飽和蒸気圧以下に容易に実現することができる。
なお、本発明の実施形態は以下のように変更してもよい。
As a result, by injecting partial pressure adjusting air (carrier gas) into the gas to be processed, the partial pressure of halon 2402 can be easily realized below the saturated vapor pressure.
In addition, you may change embodiment of this invention as follows.

○ 前記実施形態では、チュービングポンプ78を可変定量ポンプとしたが、単に定量ポンプとしてもよい。その代わりに、図2に示すように制御装置80は、温度検出手段としての温度センサ82が検出した温度に応じてブロア88の回転量を変更する。   In the above embodiment, the tubing pump 78 is a variable metering pump, but it may be simply a metering pump. Instead, as shown in FIG. 2, the control device 80 changes the rotation amount of the blower 88 according to the temperature detected by the temperature sensor 82 as the temperature detecting means.

この場合、チュービングポンプ78から送出される含ハロゲン化合物の定量が固定されるため、反応管20の温度が例えば第3閾値より低い場合には制御装置80はブロア88の回転量を減少させて、管路84に注入される分圧調整用エアの供給量を減少させ、含ハロゲン化合物の分圧を上げる。なお、第3閾値は、予め試験等により得られた値である。又、制御装置80は反応管20の温度が第4閾値(>第3閾値)より高い場合にはブロア88の回転量を増加させて、管路84に注入される分圧調整用エアの供給量を増加させ、含ハロゲン化合物の分圧を下げる。なお、第4閾値は、予め試験等により得られた値である。   In this case, since the fixed amount of the halogen-containing compound delivered from the tubing pump 78 is fixed, for example, when the temperature of the reaction tube 20 is lower than the third threshold, the control device 80 decreases the rotation amount of the blower 88, The supply amount of the partial pressure adjusting air injected into the conduit 84 is decreased, and the partial pressure of the halogen-containing compound is increased. The third threshold value is a value obtained in advance by a test or the like. Further, when the temperature of the reaction tube 20 is higher than the fourth threshold value (> the third threshold value), the control device 80 increases the rotation amount of the blower 88 and supplies the partial pressure adjusting air injected into the conduit 84. Increase the amount and lower the partial pressure of the halogen-containing compound. The fourth threshold value is a value obtained in advance by a test or the like.

この場合、チュービングポンプ78は定量送出手段に相当する。又、制御装置80は、ブロア88の駆動量を反応管20内の温度に応じて変更することにより、含ハロゲン化合物の分圧を管路84の温度における飽和蒸気圧以下に設定する制御手段に相当する。   In this case, the tubing pump 78 corresponds to a fixed amount delivery means. The control device 80 is a control means for setting the partial pressure of the halogen-containing compound to be equal to or lower than the saturated vapor pressure at the temperature of the pipe 84 by changing the driving amount of the blower 88 according to the temperature in the reaction tube 20. Equivalent to.

このようにしても、液体の含ハロゲン化合物をガス化した場合に、ガス化した含ハロゲン化合物が再液化することなく、安定して含ハロゲン化合物を含む被処理ガスを反応管内に供給することができる。   Even in this case, when the liquid halogen-containing compound is gasified, the gas to be treated can be stably supplied into the reaction tube without containing the gasified halogen-containing compound again. it can.

○ 前記実施形態では反応管20を垂直立て型としたが、傾斜立て型であっても、吸着剤を自重落下可能な傾斜角度なら、上記垂直立て型と同様な作用効果を期待できる。
○ 前記実施形態において、反応管20内の吸着剤の充填層22を固定層として、バッチ的に所定量のガスを処理後、処理ガス導入を止めて、スクリューコンベヤ46を駆動させて、反応管20内の吸着剤の充填層22を、吸着剤供給ホッパ32から未使用の吸着剤を流下させた未使用吸着剤に入れ替えてもよい。
In the above embodiment, the reaction tube 20 is a vertical standing type, but even if it is an inclined standing type, the same effect as the vertical standing type can be expected as long as the inclination angle allows the adsorbent to fall by its own weight.
In the above embodiment, the packed bed 22 of the adsorbent in the reaction tube 20 is used as a fixed layer, and after processing a predetermined amount of gas batchwise, the introduction of the processing gas is stopped and the screw conveyor 46 is driven, and the reaction tube The packed bed 22 of the adsorbent in 20 may be replaced with an unused adsorbent in which an unused adsorbent is caused to flow down from the adsorbent supply hopper 32.

○ 前記実施形態では、吸着剤をカルシウム系とマグネシウム系の両方でもよいとしたが、カルシウム系の吸着剤でのみ被処理ガスを分解処理する分解処理装置10でもよい。
○ 前記実施形態では可変定量送出手段はチュービングポンプ78で構成したが、ロータリーポンプ、ギヤポンプ、ダイヤフラム式ポンプ等により構成してもよい。
In the embodiment, the adsorbent may be both calcium-based and magnesium-based, but the decomposition treatment apparatus 10 that decomposes the gas to be treated only with the calcium-based adsorbent may be used.
In the above embodiment, the variable fixed amount delivery means is constituted by the tubing pump 78, but may be constituted by a rotary pump, a gear pump, a diaphragm type pump or the like.

一実施形態の図1には含ハロゲン化合物の分解処理装置及び被処理ガスの供給路の概略図。FIG. 1 of one embodiment is a schematic view of a halogen-containing compound decomposition treatment apparatus and a gas supply path. 他の実施形態の被処理ガスの供給路の概略図。The schematic of the supply path of the to-be-processed gas of other embodiment.

符号の説明Explanation of symbols

10…分解処理装置、20…反応管、
78…チュービングポンプ(可変定量送出手段、定量送出手段)、
88…ブロア、90…分圧設定装置。
10 ... Decomposition treatment device, 20 ... Reaction tube,
78 ... Tubing pump (variable quantitative delivery means, quantitative delivery means),
88 ... Blower, 90 ... Partial pressure setting device.

Claims (8)

液体の含ハロゲン化合物をガス化した被処理ガスを分解処理装置の反応管に送出して、該反応管内で前記含ハロゲン化合物の分解処理を行う分解処理装置に対する被処理ガスの送出方法であって、
前記含ハロゲン化合物の分圧を、前記被処理ガスが通過する管路における温度の飽和蒸気圧以下にして、前記含ハロゲン化合物を含む被処理ガスを反応管に送出することを特徴とする分解処理装置に対する被処理ガスの送出方法。
A method for delivering a gas to be processed to a decomposition processing apparatus for sending a gas to be processed gasified from a liquid halogen-containing compound to a reaction tube of a decomposition processing apparatus and performing the decomposition treatment of the halogen-containing compound in the reaction tube. ,
A decomposition treatment characterized in that a partial pressure of the halogen-containing compound is set to be equal to or lower than a saturated vapor pressure of a temperature in a pipe through which the gas to be treated passes, and the gas to be treated containing the halogen-containing compound is sent to a reaction tube. A method for delivering a gas to be processed to an apparatus.
液体の含ハロゲン化合物をガス化した被処理ガスを分解処理装置の反応管に送出して、該反応管内で前記含ハロゲン化合物の分解処理を行う分解処理装置に対する被処理ガスの送出方法であって、
前記被処理ガスを、前記反応管内の温度に応じて可変定量で送出するとともに、前記反応管内に送出される含ハロゲン化合物の分圧を、前記被処理ガスが通過する管路における温度の飽和蒸気圧以下にすることを特徴とする分解処理装置に対する被処理ガスの送出方法。
A method for delivering a gas to be processed to a decomposition processing apparatus for sending a gas to be processed gasified from a liquid halogen-containing compound to a reaction tube of a decomposition processing apparatus and performing the decomposition treatment of the halogen-containing compound in the reaction tube. ,
The gas to be treated is sent in a variable amount according to the temperature in the reaction tube, and the partial pressure of the halogen-containing compound delivered into the reaction tube is saturated with the temperature in the pipe through which the gas to be treated passes. A method for delivering a gas to be processed to a decomposition processing apparatus, characterized in that the pressure is lower than the pressure.
液体の含ハロゲン化合物をガス化した被処理ガスを分解処理装置の反応管に送出して、該反応管内で前記含ハロゲン化合物の分解処理を行う分解処理装置に対する被処理ガスの送出方法であって、
前記被処理ガスを、定量で送出するとともに、前記反応管内に送出される含ハロゲン化合物の分圧を、前記被処理ガスが通過する管路における温度の飽和蒸気圧以下にすることを特徴とする分解処理装置に対する被処理ガスの送出方法。
A method for delivering a gas to be processed to a decomposition processing apparatus for sending a gas to be processed gasified from a liquid halogen-containing compound to a reaction tube of a decomposition processing apparatus and performing the decomposition treatment of the halogen-containing compound in the reaction tube. ,
The gas to be treated is sent out in a fixed amount, and the partial pressure of the halogen-containing compound delivered into the reaction tube is made equal to or lower than the saturated vapor pressure of the temperature in the pipe through which the gas to be treated passes. A method for delivering a gas to be processed to a decomposition processing apparatus.
前記反応管内に送出される含ハロゲン化合物の分圧を飽和蒸気圧以下にする際、被処理ガスに対してキャリアガスを注入することにより前記含ハロゲン化合物の分圧を、前記被処理ガスが通過する管路における温度の飽和蒸気圧以下にするものである請求項1乃至請求項3のうちいずれか1項に記載の分解処理装置に対する被処理ガスの送出方法。   When the partial pressure of the halogen-containing compound delivered into the reaction tube is made equal to or lower than the saturated vapor pressure, the treatment gas passes through the partial pressure of the halogen-containing compound by injecting a carrier gas into the treatment gas. The method for delivering a gas to be processed to the decomposition processing apparatus according to any one of claims 1 to 3, wherein the temperature is equal to or lower than a saturated vapor pressure of a temperature in a pipeline. 液体の含ハロゲン化合物をガス化した被処理ガスが反応管に導入されて、該反応管内で前記含ハロゲン化合物の分解処理が行われる分解処理装置において、
前記反応管の上流に、前記含ハロゲン化合物の分圧を、前記被処理ガスが通過する管路における温度の飽和蒸気圧以下にする分圧設定装置が設けられていることを特徴とする分解処理装置。
In a decomposition treatment apparatus in which a gas to be treated obtained by gasifying a liquid halogen-containing compound is introduced into a reaction tube, and the halogen-containing compound is decomposed in the reaction tube,
A decomposition treatment characterized in that a partial pressure setting device is provided upstream of the reaction tube so that the partial pressure of the halogen-containing compound is equal to or lower than the saturated vapor pressure of the temperature in the pipe through which the gas to be treated passes. apparatus.
前記反応管内の温度に応じて、前記反応管に対し液体の含ハロゲン化合物をガス化した前記被処理ガスを可変定量可能に送出する可変定量送出手段を備え、
前記分圧設定装置が前記可変定量送出手段と前記反応管の間の管路に設けられていることを特徴とする請求項5に記載の分解処理装置。
According to the temperature in the reaction tube, comprising a variable quantitative sending means for sending the gas to be treated gasified liquid halogen-containing compound to the reaction tube in a variable quantitative manner,
The decomposition processing apparatus according to claim 5, wherein the partial pressure setting device is provided in a pipe line between the variable quantitative delivery means and the reaction tube.
前記反応管に対し前記被処理ガスを定量可能に送出する定量送出手段を備え、
前記分圧設定装置が前記定量送出手段と前記反応管の間の管路に設けられていることを特徴とする請求項5に記載の分解処理装置。
A fixed amount sending means for sending the gas to be treated to the reaction tube in a quantifiable manner;
The decomposition processing apparatus according to claim 5, wherein the partial pressure setting device is provided in a pipe line between the quantitative delivery means and the reaction tube.
前記分圧設定装置が、前記被処理ガスに対してキャリアガスを注入することにより前記含ハロゲン化合物の分圧を、前記被処理ガスが通過する管路における温度の飽和蒸気圧以下にするものである請求項5乃至請求項7のうちいずれか1項に記載の分解処理装置。   The partial pressure setting device makes the partial pressure of the halogen-containing compound equal to or lower than the saturated vapor pressure of the temperature in the pipe through which the gas to be processed passes by injecting a carrier gas into the gas to be processed. The decomposition processing apparatus according to any one of claims 5 to 7.
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Citations (8)

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JPH0724255A (en) * 1993-07-06 1995-01-27 Dowa Mining Co Ltd Decomposition treating method and device for fluorocarbon
JPH07130660A (en) * 1993-11-02 1995-05-19 Toray Ind Inc Method and apparatus for forming thin film
JPH09880A (en) * 1995-06-14 1997-01-07 Hitachi Ltd Method and device for treating organic halide
JPH1019227A (en) * 1996-07-04 1998-01-23 Gifu Pref Gov Method for decomposing organic halide using lime firing furnace and decomposition device therefor
JPH11221440A (en) * 1998-02-09 1999-08-17 Oei Kaihatsu Kogyo Kk Method and apparatus for decomposition treatment of hardly decomposable substance
JP2001170479A (en) * 1999-12-16 2001-06-26 Mitsubishi Heavy Ind Ltd Device for decomposing treatment of organic halogen compound
JP2001219031A (en) * 2000-02-08 2001-08-14 Air Liquide Japan Ltd Method and device for decomposing perfluorinated compound
WO2007032826A2 (en) * 2005-09-09 2007-03-22 Mks Instruments, Inc. Precursor gas delivery with carrier gas mixing

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0724255A (en) * 1993-07-06 1995-01-27 Dowa Mining Co Ltd Decomposition treating method and device for fluorocarbon
JPH07130660A (en) * 1993-11-02 1995-05-19 Toray Ind Inc Method and apparatus for forming thin film
JPH09880A (en) * 1995-06-14 1997-01-07 Hitachi Ltd Method and device for treating organic halide
JPH1019227A (en) * 1996-07-04 1998-01-23 Gifu Pref Gov Method for decomposing organic halide using lime firing furnace and decomposition device therefor
JPH11221440A (en) * 1998-02-09 1999-08-17 Oei Kaihatsu Kogyo Kk Method and apparatus for decomposition treatment of hardly decomposable substance
JP2001170479A (en) * 1999-12-16 2001-06-26 Mitsubishi Heavy Ind Ltd Device for decomposing treatment of organic halogen compound
JP2001219031A (en) * 2000-02-08 2001-08-14 Air Liquide Japan Ltd Method and device for decomposing perfluorinated compound
WO2007032826A2 (en) * 2005-09-09 2007-03-22 Mks Instruments, Inc. Precursor gas delivery with carrier gas mixing

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