JP2009138954A - High frequency processing device - Google Patents

High frequency processing device Download PDF

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JP2009138954A
JP2009138954A JP2007312601A JP2007312601A JP2009138954A JP 2009138954 A JP2009138954 A JP 2009138954A JP 2007312601 A JP2007312601 A JP 2007312601A JP 2007312601 A JP2007312601 A JP 2007312601A JP 2009138954 A JP2009138954 A JP 2009138954A
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power supply
frequency power
supply means
high frequency
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JP5127038B2 (en
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Yoshiharu Omori
義治 大森
Tomotaka Nobue
等隆 信江
Kenji Yasui
健治 安井
Makoto Mihara
誠 三原
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Panasonic Corp
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/64Heating using microwaves
    • H05B6/66Circuits
    • H05B6/68Circuits for monitoring or control
    • H05B6/688Circuits for monitoring or control for thawing
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/64Heating using microwaves
    • H05B6/70Feed lines
    • H05B6/705Feed lines using microwave tuning
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2206/00Aspects relating to heating by electric, magnetic, or electromagnetic fields covered by group H05B6/00
    • H05B2206/04Heating using microwaves
    • H05B2206/044Microwave heating devices provided with two or more magnetrons or microwave sources of other kind

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Electric Ovens (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high frequency processing device capable of shortening a cooking time by improving heating efficiency. <P>SOLUTION: The information is acquired by detecting high frequency reflected power supplied to a heating chamber 8 from power supply portions 7a, 7b of a first high frequency power supply means 1A and returned through a heated object 9, and heating cooking of the heating object 9 is performed while controlling power supply portions 7a to 7d of the first high frequency power supply means 1A and a second high frequency power supply means 1B according to a result of the detection, thus the heating efficiency can be improved. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、被加熱物を加熱することができる高周波電力供給手段を備えた高周波処理装置に関するものである。   The present invention relates to a high-frequency treatment apparatus including a high-frequency power supply unit that can heat an object to be heated.

従来の高周波を用いた高周波加熱装置は、半導体発振部と、発振部の出力を複数に分割する分配部と、分配された出力をそれぞれ増幅する複数の増幅部と、増幅部の出力を再合成する合成部とを有し、分配部と増幅部との間に位相器を設けたものが知られている(例えば特許文献1参照)。   A conventional high-frequency heating device using high frequency is a semiconductor oscillation unit, a distribution unit that divides the output of the oscillation unit into a plurality of units, a plurality of amplification units that amplify the distributed output, and the output of the amplification unit. There is a known combination including a combining unit and a phase shifter provided between the distributing unit and the amplifying unit (see, for example, Patent Document 1).

前述した特許文献1に記載の高周波加熱装置では、位相器はダイオードのオンオフ特性により高周波の通過線路長を切り替える構成としている。また、合成部は90度および180度ハイブリッドを用いることで合成部の出力を2つにすることができ、位相器を制御することで2出力の電力比を変化させたり、2出力間の位相を同相あるいは逆相にさせたりすることができるとされている。また、この種の高周波加熱装置は、一般には電子レンジに代表されるように高周波発生部にマグネトロンと称される真空管を用いている。
特開昭56−132793号公報
In the high-frequency heating device described in Patent Document 1 described above, the phase shifter is configured to switch the high-frequency pass line length by the on / off characteristics of the diode. In addition, the synthesis unit can use two 90 degree and 180 degree hybrids, so that the output of the synthesis unit can be made two. By controlling the phase shifter, the power ratio of the two outputs can be changed, or the phase between the two outputs can be changed. Can be in-phase or out-of-phase. In addition, this type of high-frequency heating apparatus generally uses a vacuum tube called a magnetron in a high-frequency generator as represented by a microwave oven.
JP 56-132793 A

ところで、近年、高周波加熱装置を用いた調理を行う際に、無駄な電力を消費することなく短時間で所望の調理を行うために、加熱効率の向上が求められている。   By the way, in recent years, when cooking using a high-frequency heating apparatus, in order to perform desired cooking in a short time without consuming wasteful electric power, improvement in heating efficiency is required.

本発明は、前述した要望を満たすためになされたものであり、その目的は、加熱効率を向上させることにより調理時間を短縮できる高周波処理装置を提供することを目的とする。   The present invention has been made to satisfy the above-described demand, and an object of the present invention is to provide a high-frequency processing apparatus capable of shortening cooking time by improving heating efficiency.

本発明の高周波処理装置は、被加熱物を収容する加熱室と、高周波電力を発生させる発振部と、前記発振部で発生された高周波電力を前記加熱室内に供給する給電部と、前記加熱室から前記発振部方向に戻る高周波反射電力を検知する電力検知部とを有する第1高周波電力供給手段と、高周波電力を発生させる発振部と、前記発振部で発生された高周波電力を前記加熱室内に供給する給電部とを有する第2高周波電力供給手段と、前記第1高周波電力供給手段の電力検知部からの検知信号に基づいて、前記第1高周波電力供給手段および前記第2高周波電力供給手段の少なくとも一方の給電部から供給される高周波電力及び/または発振周波数を制御する制御部と、を備え、前記第1高周波電力供給手段の給電部による高周波電力と前記第2高周波電力供給手段の給電部による高周波電力との間で励振電界および励振磁界の方向を異ならせた構成としてある。   The high-frequency treatment apparatus of the present invention includes a heating chamber that accommodates an object to be heated, an oscillation unit that generates high-frequency power, a power supply unit that supplies high-frequency power generated in the oscillation unit to the heating chamber, and the heating chamber A first high-frequency power supply means having a power detection unit for detecting high-frequency reflected power returning from the direction toward the oscillation unit, an oscillation unit for generating high-frequency power, and the high-frequency power generated by the oscillation unit in the heating chamber A second high-frequency power supply unit having a power supply unit to be supplied, and a first high-frequency power supply unit and a second high-frequency power supply unit based on a detection signal from a power detection unit of the first high-frequency power supply unit. A high frequency power supplied from at least one power supply unit and / or a control unit for controlling an oscillation frequency, and the high frequency power by the power supply unit of the first high frequency power supply means and the second It is constituted having different directions of excitation field and the excitation magnetic field with the high-frequency power by the power supply unit of the frequency power supply means.

この構成により、第1高周波電力供給手段の電力検知部からの検知信号に基づいて、第1高周波電力供給手段および第2高周波電力供給手段の少なくとも一方の給電部から供給される高周波を最適の条件に制御するので、加熱効率が向上して加熱時間の短縮や均一加熱が可能となる。また、第1高周波電力供給手段の給電部による高周波電力と第2高周波電力供給手段の給電部による高周波電力との間で励振電界および励振磁界の方向を異ならせたので、放射された高周波は相互干渉しない。第1高周波電力供給手段および第2高周波電力供給手段から放射される高周波間で相互干渉がないため、第1高周波電力供給手段により形成する加熱室内の電磁界分布や給電部を介して発振部方向へ戻る高周波反射電力などの高周波性能に第2高周波電力供給手段から放射される高周波は影響しない。このため、第1高周波電力供給手段における検知は、第2高周波電力供給手段による加熱を同時に行ってもその影響を受けずに遂行できる。また、逆に第2高周波電力供給手段により形成される高周波性能に第1高周波電力供給手段から放射される高周波は影響しない。したがって各高周波電力供給手段によって作り出す高周波性能を低下させるようなことがない。   With this configuration, based on the detection signal from the power detection unit of the first high frequency power supply unit, the high frequency supplied from at least one of the power supply units of the first high frequency power supply unit and the second high frequency power supply unit is optimized. Therefore, the heating efficiency is improved, and the heating time is shortened and uniform heating is possible. Further, since the directions of the excitation electric field and the excitation magnetic field are different between the high-frequency power from the power supply unit of the first high-frequency power supply means and the high-frequency power from the power supply unit of the second high-frequency power supply means, Does not interfere. Since there is no mutual interference between the high frequencies radiated from the first high-frequency power supply means and the second high-frequency power supply means, the direction of the oscillating section is determined via the electromagnetic field distribution in the heating chamber formed by the first high-frequency power supply means and the power supply section. The high frequency radiated from the second high frequency power supply means does not affect the high frequency performance such as the high frequency reflected power to return to. For this reason, the detection in the first high-frequency power supply means can be performed without being affected by the simultaneous heating by the second high-frequency power supply means. Conversely, the high frequency radiated from the first high frequency power supply means does not affect the high frequency performance formed by the second high frequency power supply means. Therefore, the high frequency performance produced by each high frequency power supply means is not deteriorated.

また、本発明の高周波処理装置は、前記第1高周波電力供給手段の給電部および電力検知部が複数であり、前記制御部は、前記第1高周波電力供給手段の複数の電力検知部からの検知信号に基づいて、前記第1高周波電力供給手段および前記第2高周波電力供給手段の少なくとも一方の給電部から供給される高周波電力及び/または発振周波数または、前記第1高周波電力供給手段の給電部から供給される高周波の位相を制御し、前記第1高周波電力供給手段の複数の給電部による高周波電力の励振電界または励振磁界の方向を一致させた構成としてある。   In the high frequency processing apparatus of the present invention, the first high frequency power supply means includes a plurality of power supply units and power detection units, and the control unit detects from a plurality of power detection units of the first high frequency power supply unit. Based on the signal, the high frequency power and / or oscillation frequency supplied from at least one of the first high frequency power supply means and the second high frequency power supply means, or the power supply section of the first high frequency power supply means The phase of the supplied high frequency is controlled, and the direction of the excitation electric field or excitation magnetic field of the high frequency power by the plurality of power feeding sections of the first high frequency power supply means is made to coincide.

この構成により、第1高周波電力供給手段の複数の給電部および電力検知部を使用し、高周波を放射した給電部へ戻る電力と、他方の給電部へ透過する電力をそれぞれ測定でき、これらの検知信号に基づいて、第1高周波電力供給手段および第2高周波電力供給手段の少なくとも一方の給電部から供給される高周波を最適の条件に制御するので、電力検知部での入手情報が増え、より精度のある推測ができ、より最適な制御を選択でき、より最適な加熱性能が得られる。また、第1高周波電力供給手段の複数の給電部による高周波電力の励振電界または励振磁界の方向を一致させたので、放射された高周波は相互干渉する。放射される複数の高周波間で相互干渉するので、発振周波数や位相差を調整することにより加熱室内の電磁界分布や給電部を介して発振部方向へ戻る高周波反射電力などの高周波性能を調整できる。   With this configuration, it is possible to measure the power returning to the power feeding unit that radiates the high frequency and the power transmitted to the other power feeding unit using the plurality of power feeding units and the power detection unit of the first high-frequency power supply unit, Based on the signal, the high frequency supplied from at least one of the first high-frequency power supply means and the second high-frequency power supply means is controlled to an optimum condition, so that the information obtained in the power detection section increases and the accuracy is increased. Therefore, more optimal control can be selected, and more optimal heating performance can be obtained. In addition, since the directions of the excitation electric field or excitation magnetic field of the high-frequency power by the plurality of power supply units of the first high-frequency power supply means are matched, the radiated high frequencies interfere with each other. Since there is mutual interference between multiple radiated high frequencies, by adjusting the oscillation frequency and phase difference, it is possible to adjust the high-frequency performance such as the electromagnetic field distribution in the heating chamber and the high-frequency reflected power that returns to the oscillating unit through the feeding unit .

また、本発明の高周波処理装置は、前記第2高周波電力供給手段の給電部が複数であり、前記第2高周波電力供給手段に更に前記加熱室から前記第2高周波電力供給手段の発振部方向に戻る高周波反射電力を検知する複数の電力検知部を設け、前記制御部は、前記第1高周波電力供給手段の複数の電力検知部からの検知信号および前記第2高周波電力供給手段の複数の電力検知部からの検知信号に基づいて、前記第1高周波電力供給手段および前記第2高周波電力供給手段の少なくとも一方の給電部から供給される高周波電力及び/または発振周波数または、位相を制御し、前記第2高周波電力供給手段の複数の給電部による高周波電力の励振電界または励振磁界の方向を一致させた構成としてある。   In the high frequency processing apparatus of the present invention, the second high frequency power supply unit includes a plurality of power supply units, and further from the heating chamber toward the oscillation unit of the second high frequency power supply unit. A plurality of power detection units for detecting returning high-frequency reflected power are provided, and the control unit detects detection signals from a plurality of power detection units of the first high-frequency power supply unit and a plurality of power detections of the second high-frequency power supply unit. Based on the detection signal from the unit, the high-frequency power and / or the oscillation frequency or phase supplied from at least one of the first high-frequency power supply unit and the second high-frequency power supply unit is controlled, and the first (2) The direction of the excitation electric field or excitation magnetic field of the high-frequency power by the plurality of power supply units of the high-frequency power supply means is made to coincide.

この構成により、第1高周波電力供給手段の複数の給電部および電力検知部および第2高周波電力供給手段の複数の給電部および電力検知部を使用し、高周波を放射した給電部へ戻る電力と、他方の給電部へ透過する電力をそれぞれ測定でき、これらの検知信号に基づいて、第1高周波電力供給手段および第2高周波電力供給手段の少なくとも一方の給電部から供給される高周波を最適の条件に制御するので、電力検知部での入手情報が増え、より精度のある推測ができ、より最適な制御を選択でき、より最適な加熱性能が得られる。また、第2高周波電力供給手段の複数の給電部による高周波電力の励振電界または励振磁界の方向を一致させたので、放射された高周波は相互干渉する。放射される複数の高周波間で相互干渉するので、発振周波数や位相差を調整することにより加熱室内の電磁界分布や給電部を介して発振部方向へ戻る高周波反射電力などの高周波性能を調整できる。   With this configuration, using the plurality of power feeding units and the power detection unit of the first high frequency power supply unit and the plurality of power feeding units and the power detection unit of the second high frequency power supply unit, power returning to the power feeding unit that radiates the high frequency, The power transmitted to the other power supply unit can be measured, and based on these detection signals, the high frequency supplied from at least one of the first high frequency power supply unit and the second high frequency power supply unit is set to an optimum condition. Since the control is performed, the information obtained in the power detection unit is increased, more accurate estimation can be performed, more optimal control can be selected, and more optimal heating performance can be obtained. In addition, since the directions of the excitation electric field or excitation magnetic field of the high frequency power by the plurality of power supply units of the second high frequency power supply means are matched, the radiated high frequencies interfere with each other. Since there is mutual interference between multiple radiated high frequencies, it is possible to adjust the high frequency performance such as the electromagnetic field distribution in the heating chamber and the high frequency reflected power that returns to the oscillating unit through the power supply unit by adjusting the oscillation frequency and phase difference. .

また、本発明の高周波処理装置は、前記第1高周波電力供給手段の複数の給電部が前記加熱室において互いに対向する一対の壁面にそれぞれの励振電界または励振磁界の方向が一致するよう設けられ、前記第2高周波電力供給手段の複数の給電部が前記第1高周波電力供給手段の複数の給電部が設けられた壁面とは別の壁面、かつ、互いに対向する一対の壁面にそれぞれの励振電界または励振磁界の方向が一致し、かつ、前記第1高周波電力供給手段の複数の給電部の励振電界および励振磁界の方向と異なるよう設けられている構成としてある。   Further, in the high frequency processing apparatus of the present invention, the plurality of power feeding units of the first high frequency power supply means are provided on a pair of wall surfaces facing each other in the heating chamber so that the directions of the excitation electric field or the excitation magnetic field coincide with each other. The plurality of power feeding portions of the second high frequency power supply means are different from the wall surface provided with the plurality of power feeding portions of the first high frequency power supply means, and a pair of wall surfaces facing each other, The directions of the excitation magnetic fields coincide with each other and are different from the directions of the excitation electric field and the excitation magnetic field of the plurality of power feeding units of the first high-frequency power supply means.

この構成により、第1高周波電力供給手段と第2高周波電力供給手段とが異なる対向する壁面にそれぞれ高周波電力供給手段毎で励振電界または励振磁界の方向が一致し、かつ、異なる高周波電力供給手段間で励振電界および励振磁界の方向が異なるよう設けられているので、第1高周波電力供給手段と第2高周波電力供給手段から供給される高周波の相互干渉が抑えられ、第1高周波電力供給手段による調理と、第2高周波電力供給手段による調理とを同時に行っても、相互の影響が少なく、最適な調理の進行を確保することができる。   With this configuration, the direction of the excitation electric field or the excitation magnetic field for each high-frequency power supply means coincides with the opposing wall surface where the first high-frequency power supply means and the second high-frequency power supply means are different, and between different high-frequency power supply means Since the directions of the excitation electric field and the excitation magnetic field are different from each other, the mutual interference of the high frequencies supplied from the first high frequency power supply means and the second high frequency power supply means is suppressed, and cooking by the first high frequency power supply means is performed. Even when the cooking by the second high-frequency power supply means is performed at the same time, there is little influence on each other and it is possible to ensure the optimal cooking progress.

また、本発明の高周波処理装置は、前記加熱室における互いに対向する一対の壁面のうちの一方に前記第1高周波電力供給手段の複数の給電部のうちの一方と、前記第2高周波電力供給手段の複数の給電部のうちの一方とが設けられ、前記加熱室における互いに対向する一対の壁面のうちの他方に前記第1高周波電力供給手段の複数の給電部のうちの他方と、前記第2高周波電力供給手段の複数の給電部のうちの他方とが設けられ、更に、前記第1高周波電力供給手段および前記第2高周波電力供給手段毎に励振電界または励振磁界の方向を一致させ、かつ、前記第1高周波電力供給手段および前記第2高周波電力供給手段間で励振電界および励振磁界の方向を異ならせた構成としてある。   In the high-frequency treatment apparatus of the present invention, one of a plurality of power feeding sections of the first high-frequency power supply means and one of the pair of wall surfaces facing each other in the heating chamber and the second high-frequency power supply means And the second of the plurality of power feeding sections of the first high-frequency power supply means on the other of the pair of wall surfaces facing each other in the heating chamber, and the second The other of the plurality of power supply units of the high-frequency power supply means is provided, and the direction of the excitation electric field or excitation magnetic field is made to coincide with each other for each of the first high-frequency power supply means and the second high-frequency power supply means, and The first and second high-frequency power supply means and the second high-frequency power supply means have different excitation electric fields and excitation magnetic field directions.

この構成により、対向する壁面の一方に第1高周波電力供給手段および第2高周波電力供給手段の一方の給電部が設けられ、対向する壁面の他方に第1高周波電力供給手段および第2高周波電力供給手段の他方の給電部が設けられるので、第1高周波電力供給手段と第2高周波電力供給手段の給電部が同じ対向する壁面に設けられ、第1高周波電力供給手段および第2高周波電力供給手段により発生するそれぞれの電磁界分布などの高周波電力供給状態が同様の傾向となり、被加熱物に集中した加熱など加熱強弱のパターンを明確にした加熱が行いやすくする。   With this configuration, one of the first high frequency power supply means and the second high frequency power supply means is provided on one of the opposing wall surfaces, and the first high frequency power supply means and the second high frequency power supply are provided on the other of the opposing wall surfaces. Since the other power supply unit is provided, the power supply units of the first high-frequency power supply unit and the second high-frequency power supply unit are provided on the same opposing wall surface, and the first high-frequency power supply unit and the second high-frequency power supply unit The high-frequency power supply state such as the distribution of each generated electromagnetic field has the same tendency, and heating with a clear pattern of heating intensity such as heating concentrated on the object to be heated is facilitated.

本発明は、第1高周波電力供給手段の電力検知部からの検知信号に基づいて、第1高周波電力供給手段および第2高周波電力供給手段の少なくとも一方の給電部から供給される高周波電力を制御するので、加熱効率が向上して加熱時間の短縮や均一加熱が可能な高周波処理装置を提供することができる。   The present invention controls high-frequency power supplied from at least one of the first high-frequency power supply means and the second high-frequency power supply means based on a detection signal from the power detection section of the first high-frequency power supply means. Therefore, it is possible to provide a high-frequency processing apparatus capable of improving the heating efficiency and shortening the heating time or uniform heating.

以下、本発明の実施の形態の高周波処理装置について、図面を用いて説明する。
図1は本発明の第1の実施の形態における高周波処理装置の構成図、図2(A)は給電部による励振方向が同一の場合を示す説明図、図2(B)は給電部による励振方向が異なる場合を示す説明図である。
Hereinafter, a high frequency processing apparatus according to an embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a configuration diagram of a high-frequency processing device according to a first embodiment of the present invention, FIG. 2A is an explanatory diagram showing a case where the excitation direction by the power feeding unit is the same, and FIG. 2B is an excitation by the power feeding unit. It is explanatory drawing which shows the case where directions differ.

図1において、高周波発生部1は、第1高周波電力供給手段1Aおよび第2高周波電力供給手段1Bを有している。第1高周波電力供給手段1Aおよび第2高周波電力供給手段1Bは、それぞれ、半導体素子を用いて構成した発振部2a,2b、発振部2a,2bの出力を2分配する電力分配部3a,3b、電力分配部3a,3bそれぞれの出力を増幅する半導体素子を用いて構成した増幅部5a〜5d、増幅部5a〜5dによって増幅された高周波出力を加熱室8内に放射する給電部7a〜7dを有している。また、電力分配部3a,3bと増幅部5a〜5dとを接続する高周波伝送路に挿入され入出力に任意の位相差を発生させる位相可変部4a〜4d、発振部2a、2bと給電部7a〜7dとの間(ここでは、増幅部5a〜5dと給電部7a〜7dとの間)を接続する高周波伝送路に挿入され給電部7a〜7dから反射する電力を検知する電力検知部6a〜6d、電力検知部6a〜6dによって検知される反射電力に応じて発振部2a,2bの発振周波数と位相可変部4a〜4dの位相量を制御する制御部10とで構成している。   In FIG. 1, the high frequency generator 1 includes first high frequency power supply means 1A and second high frequency power supply means 1B. The first high-frequency power supply means 1A and the second high-frequency power supply means 1B are respectively composed of oscillation units 2a and 2b configured using semiconductor elements, and power distribution units 3a and 3b that distribute the outputs of the oscillation units 2a and 2b to two. Amplifying units 5a to 5d configured using semiconductor elements that amplify the outputs of the respective power distribution units 3a and 3b, and power feeding units 7a to 7d that radiate high-frequency outputs amplified by the amplifying units 5a to 5d into the heating chamber 8 Have. Also, phase variable units 4a to 4d that are inserted into a high-frequency transmission line connecting the power distribution units 3a and 3b and the amplifiers 5a to 5d and generate an arbitrary phase difference between the input and output, the oscillation units 2a and 2b, and the power feeding unit 7a. To 7d (here, between the amplifying units 5a to 5d and the power feeding units 7a to 7d) are inserted into a high-frequency transmission line that detects power reflected from the power feeding units 7a to 7d. 6d, and a control unit 10 that controls the oscillation frequencies of the oscillation units 2a and 2b and the phase amounts of the phase variable units 4a to 4d in accordance with the reflected power detected by the power detection units 6a to 6d.

制御部10は発振部2a、2bおよび位相可変部4a〜4dを制御することにより、第1高周波電力供給手段1Aおよび第2高周波電力供給手段1Bを独立して別個に制御できるようになっている。なお、制御部10には各種のスイッチを有する操作部11が接続されており、使用者は操作部11を通じて調理メニューを選択する。   The control unit 10 can control the first high frequency power supply unit 1A and the second high frequency power supply unit 1B independently and separately by controlling the oscillation units 2a and 2b and the phase variable units 4a to 4d. . Note that an operation unit 11 having various switches is connected to the control unit 10, and the user selects a cooking menu through the operation unit 11.

また、本実施の形態の高周波処理装置は、被加熱物9を収納する略直方体構造からなる加熱室8を有し、加熱室8は金属材料からなる左壁面、右壁面、底壁面、上壁面、奥壁面および被加熱物を収納するために開閉する開閉扉(図示していない)と、被加熱物を載置する載置台から構成し、供給される高周波を内部に閉じ込めるように構成している。   In addition, the high-frequency processing apparatus of the present embodiment has a heating chamber 8 having a substantially rectangular parallelepiped structure that accommodates an object 9 to be heated. It is composed of an open / close door (not shown) that opens and closes to store the back wall and the object to be heated, and a mounting table on which the object to be heated is placed, and is configured to confine the supplied high frequency inside. Yes.

そして、高周波発生部1の出力が伝送されその高周波を加熱室8内に放射供給する給電部7a〜7dが加熱室8を構成する壁面に配置されている。ここでは、第1高周波電力供給手段1Aは一対(複数)の給電部7a、7bを加熱室8の上壁面と底壁面の略中央にそれぞれ配置し、第2高周波電力供給手段1Bの一対(複数)の給電部7c,7dを対向構成の左壁面と右壁面の略中央にそれぞれ設けた構成をしている。すなわち、第1高周波電力供給手段1Aの給電部7a、7bと、第2高周波電力供給手段1Bの給電部7c、7dとは、異なる対向する壁面に設けられることになる。   The power feeding units 7 a to 7 d that transmit the output of the high frequency generator 1 and radiate the high frequency into the heating chamber 8 are arranged on the wall surface of the heating chamber 8. Here, the first high-frequency power supply means 1A has a pair (plurality) of power feeding portions 7a and 7b arranged at substantially the center of the upper wall surface and the bottom wall surface of the heating chamber 8, respectively. ) Are provided at substantially the center of the left wall surface and the right wall surface of the opposing structure. That is, the power feeding units 7a and 7b of the first high frequency power supply unit 1A and the power feeding units 7c and 7d of the second high frequency power supply unit 1B are provided on different opposing wall surfaces.

なお、第1高周波電力供給手段1Aにおける複数の給電部7a、7bの励振電界方向Aが同じであり、かつ、第2高周波電力供給手段1Bにおける給電部7c、7dの励振電界方向Bと異なるように配置されている。すなわち、図2(A)に示すように、第1高周波電力供給手段1Aにおける複数の給電部7a、7bの励振電界方向Aを例えば奥行き方向に設定する場合には、第2高周波電力供給手段1Bにおける給電部7c、7dの励振電界方向Bを上下方向に設定し、第1高周波電力供給手段1Aと第2高周波電力供給手段1Bの励振電界方向を異ならせている。   It should be noted that the excitation electric field directions A of the plurality of power feeding units 7a and 7b in the first high frequency power supply unit 1A are the same and are different from the excitation electric field directions B of the power feeding units 7c and 7d in the second high frequency power supply unit 1B. Is arranged. That is, as shown in FIG. 2A, when the excitation electric field direction A of the plurality of power feeding units 7a and 7b in the first high-frequency power supply means 1A is set in the depth direction, for example, the second high-frequency power supply means 1B. The excitation electric field direction B of the power feeding units 7c and 7d is set to the vertical direction, and the excitation electric field directions of the first high frequency power supply means 1A and the second high frequency power supply means 1B are made different.

このように、第1高周波電力供給手段1Aの給電部7a、7bと第2高周波電力供給手段1Bの給電部7c、7dとが異なる対向する壁面に設けられ、各給電部から放射される高周波の励振電界または励振磁界の方向を高周波電力供給手段毎に一致させ、更に、異なる高周波電力供給手段間で違えているので、第1高周波電力供給手段1Aによる最適条件での加熱と、第2高周波電力供給手段1Bによる最適条件での加熱とを同時に行っても、相互間の干渉による影響を抑えることができ、両高周波電力供給手段それぞれで期待される最適な仕上がりの調理が行なえる。また、第1高周波電力供給手段および第2高周波電力供給手段をそれぞれ対向する壁面に設け4壁面から高周波を供給しているので、調理を、満遍なく行うことができる。   In this way, the power supply units 7a and 7b of the first high-frequency power supply unit 1A and the power supply units 7c and 7d of the second high-frequency power supply unit 1B are provided on different opposing wall surfaces, and the high-frequency power radiated from each power supply unit The direction of the excitation electric field or the excitation magnetic field is made to coincide with each other for the high-frequency power supply means, and further different between the different high-frequency power supply means, so that heating under the optimum conditions by the first high-frequency power supply means 1A and the second high-frequency power supply means Even if the heating under the optimum conditions by the supply means 1B is performed simultaneously, the influence of mutual interference can be suppressed, and the optimum finished cooking expected by each of the high-frequency power supply means can be performed. Moreover, since the first high frequency power supply means and the second high frequency power supply means are provided on the opposing wall surfaces and the high frequency is supplied from the four wall surfaces, cooking can be performed evenly.

増幅部5a〜5dは、低誘電損失材料から構成した誘電体基板の片面に形成した導電体パターンにて回路を構成し、各増幅部の増幅素子である半導体素子を良好に動作させるべく各半導体素子の入力側と出力側にそれぞれ整合回路を配している。各々の機能ブロックを接続する高周波伝送路は、誘電体基板の片面に設けた導電体パターンによって特性インピーダンスが略50Ωの伝送回路を形成している。   The amplifying units 5a to 5d constitute a circuit with a conductor pattern formed on one surface of a dielectric substrate made of a low dielectric loss material, and each semiconductor is operated in order to operate a semiconductor element that is an amplifying element of each amplifying unit satisfactorily. Matching circuits are arranged on the input side and output side of the element, respectively. The high-frequency transmission line connecting each functional block forms a transmission circuit having a characteristic impedance of about 50Ω by a conductor pattern provided on one side of the dielectric substrate.

電力分配部3a,3bは、例えばウィルキンソン型分配器のような出力間に位相差を生じない同相分配器であってもよいし、ブランチライン型やラットレース型のような出力間に位相差を生じる分配器であってもかまわない。この電力分配部3a,3bによって各々の出力には発振部2a,2bから入力された高周波電力の略1/2の電力が伝送される。   The power distribution units 3a and 3b may be in-phase distributors that do not cause a phase difference between outputs such as Wilkinson type distributors, or may have a phase difference between outputs such as branch line type or rat race type. It may be the resulting distributor. The power distribution units 3a and 3b transmit substantially half of the high frequency power input from the oscillation units 2a and 2b to the respective outputs.

また、位相可変部4a〜4dは、印加電圧に応じて容量が変化する容量可変素子を用いて構成し、各々の位相可変範囲は、0度から略180度の範囲としている。これによって位相可変部4a〜4dより出力される高周波電力の位相差は0度から±180度の範囲を制御することができる。   Further, the phase variable sections 4a to 4d are configured by using variable capacitance elements whose capacitance changes according to the applied voltage, and each phase variable range is a range from 0 degrees to about 180 degrees. As a result, the phase difference of the high-frequency power output from the phase varying units 4a to 4d can be controlled in the range of 0 to ± 180 degrees.

また、電力検知部6a〜6dは、加熱室8側から給電部7a〜7dを介して発振部2a、2b方向に戻る高周波反射電力を抽出するものであり、電力結合度をたとえば約40dBとし、反射電力の約1/10000の電力量を抽出する。この電力信号はそれぞれ、検波ダイオード(図示していない)で整流化しコンデンサ(図示していない)で平滑処理し、その出力信号を制御部10に入力させている。   The power detection units 6a to 6d extract high-frequency reflected power that returns from the heating chamber 8 side through the power feeding units 7a to 7d in the direction of the oscillation units 2a and 2b. The power coupling degree is, for example, about 40 dB. An amount of power that is approximately 1/10000 of the reflected power is extracted. The power signals are rectified by a detection diode (not shown), smoothed by a capacitor (not shown), and the output signal is input to the control unit 10.

制御部10は、使用者が直接入力する被加熱物9の加熱条件あるいは加熱中に被加熱物9の加熱状態から得られる加熱情報と電力検知部6a〜6dが検知した検知情報に基づいて、高周波発生部の構成要素である発振部2a,2bと増幅部5a〜5dのそれぞれに供給する駆動電力の制御や位相可変部4a〜4dに供給する電圧を制御して、加熱室8内に収納された被加熱物9を最適に加熱する。   Based on the heating information obtained from the heating condition of the article 9 to be heated or the heating state of the article 9 to be heated and the detection information detected by the power detectors 6a to 6d, the controller 10 directly inputs the user. The driving power supplied to each of the oscillators 2a and 2b and the amplifiers 5a to 5d, which are constituent elements of the high frequency generator, and the voltage supplied to the phase variable parts 4a to 4d are controlled and stored in the heating chamber 8. The heated object 9 thus heated is optimally heated.

また、高周波発生部1には主に増幅部5a〜5dに備えた半導体素子の発熱を放熱させる放熱手段(図示していない)を配する。   Further, the high frequency generator 1 is provided with a heat radiating means (not shown) that mainly radiates heat generated by the semiconductor elements provided in the amplifiers 5a to 5d.

以上のように構成された高周波処理装置について、以下その動作、作用を説明する。
まず被加熱物9を加熱室8に収納し、その加熱条件を操作部11から入力し、加熱開始キーを押す。加熱開始信号を受けた制御部10の制御出力信号により高周波発生部1が動作を開始する。制御手段10は、駆動電源(図示していない)を動作させて発振部2aおよび2bに電力を供給する。この時、発振部2a、2bの初期の発振周波数は、たとえば2400MHzに設定する電圧信号を供給し、発振が開始する。
About the high frequency processing apparatus comprised as mentioned above, the operation | movement and an effect | action are demonstrated below.
First, the object to be heated 9 is stored in the heating chamber 8, the heating condition is input from the operation unit 11, and the heating start key is pressed. In response to the control output signal of the controller 10 that has received the heating start signal, the high frequency generator 1 starts its operation. The control means 10 operates a drive power supply (not shown) to supply power to the oscillation units 2a and 2b. At this time, the initial oscillation frequency of the oscillation units 2a and 2b is supplied with a voltage signal set to 2400 MHz, for example, and oscillation starts.

発振部2a、2bを動作させると、その出力は電力分配部3a、3bにて各々略1/2分配され、4つの高周波電力信号となる。以降、駆動電源を制御して増幅部5a〜5dを動作させる。
そしてそれぞれの高周波電力信号は並列動作する増幅部5a〜5d、電力検知部6a〜6dを経て給電部7a〜7dにそれぞれ出力され加熱室8内に放射される。このときの増幅部5a〜5dはそれぞれ100W未満、たとえば50Wの高周波電力を出力する。
When the oscillating units 2a and 2b are operated, their outputs are distributed approximately ½ each by the power distributing units 3a and 3b, and become four high-frequency power signals. Thereafter, the drive power supply is controlled to operate the amplifying units 5a to 5d.
Then, the respective high frequency power signals are output to the power feeding units 7 a to 7 d through the amplifying units 5 a to 5 d and the power detection units 6 a to 6 d operating in parallel, and are radiated into the heating chamber 8. At this time, the amplifying units 5a to 5d each output high-frequency power of less than 100 W, for example, 50 W.

加熱室8内に供給される高周波電力が被加熱物9に100%吸収されると加熱室8からの高周波反射電力は0Wになるが、実際には被加熱物の種類・形状・量や被加熱物を含む加熱室8で決まるインピーダンスと、高周波発生部1の出力インピーダンスとの整合ずれにより、加熱室8側から給電部7a〜7dを介して発振部2a、2b方向に反射する高周波反射電力が生じる。電力検知部6a〜6dは、この高周波反射電力を検出し、その電力量に比例した信号を検出するものであり、その検出信号を受けた制御部10は、高周波反射電力が極小値となる発振周波数および位相差の選択を行う。   When 100% of the high-frequency power supplied into the heating chamber 8 is absorbed by the object 9 to be heated, the high-frequency reflected power from the heating chamber 8 becomes 0 W. In practice, however, the type, shape, amount, High-frequency reflected power reflected from the heating chamber 8 side toward the oscillating units 2a and 2b through the power feeding units 7a to 7d due to a mismatch between the impedance determined by the heating chamber 8 including the heated object and the output impedance of the high-frequency generating unit 1 Occurs. The power detectors 6a to 6d detect the high-frequency reflected power and detect a signal proportional to the amount of power. The control unit 10 that receives the detection signal oscillates the high-frequency reflected power at a minimum value. Select frequency and phase difference.

制御部10は、発振部2aおよび2bの発振周波数を2400MHzから例えば1MHzピッチで、周波数可変範囲の上限である2500MHzまで変化させながら電力検知部6a〜6dで高周波反射電力を検出することにより、高周波反射電力を最小とする発振周波数の情報を得る。同様に制御部10は、位相可変部4a〜4dによって生じる位相差を0度から変化させながら電力検知部6a〜6dで高周波反射電力を検出することにより、高周波反射電力を最小とする位相差の情報を得る。   The control unit 10 detects the high frequency reflected power with the power detection units 6a to 6d while changing the oscillation frequency of the oscillation units 2a and 2b from 2400 MHz to 2500 MHz which is the upper limit of the frequency variable range at a 1 MHz pitch, for example. Information on the oscillation frequency that minimizes the reflected power is obtained. Similarly, the control unit 10 detects the high-frequency reflected power by the power detection units 6a to 6d while changing the phase difference generated by the phase variable units 4a to 4d from 0 degrees, thereby reducing the phase difference that minimizes the high-frequency reflected power. get information.

なお、第1高周波電力供給手段1Aおよび第2高周波電力供給手段1B毎に励振電界または励振磁界の方向を一致させているので、給電部7aと7bおよび、7cと7dの組合せで供給される高周波間で相互干渉が発生し、両高周波電力供給手段1A、1B毎の周波数や位相差制御により、両高周波電力供給手段1A、1Bそれぞれにより発生する加熱室8内の電磁界分布およびそれぞれへの高周波反射電力が影響を受けて変動する。   Since the directions of the excitation electric field or the excitation magnetic field are the same for each of the first high frequency power supply means 1A and the second high frequency power supply means 1B, the high frequency supplied by the combination of the power feeding units 7a and 7b and 7c and 7d is used. Mutual interference occurs between the two high-frequency power supply units 1A and 1B, and the electromagnetic field distribution in the heating chamber 8 generated by each of the high-frequency power supply units 1A and 1B and the high frequency to each of the high-frequency power supply units 1A and 1B. The reflected power is affected and fluctuates.

また、第1高周波電力供給手段1Aおよび第2高周波電力供給手段1B間で励振電界および励振磁界の方向を異ならせているので、両高周波電力供給手段間で相互干渉による影響が抑えられ、第1高周波電力供給手段1Aおよび第2高周波電力供給手段1Bそれぞれの最適条件で独立して加熱を行うことができる。   Further, since the directions of the excitation electric field and the excitation magnetic field are different between the first high-frequency power supply means 1A and the second high-frequency power supply means 1B, the influence of mutual interference is suppressed between the two high-frequency power supply means, and the first Heating can be performed independently under the optimum conditions of the high-frequency power supply means 1A and the second high-frequency power supply means 1B.

制御部10はこの高周波反射電力が最も小さくなる発振部2a、2bの発振周波数および位相可変部4a〜4dの位相差の条件で制御するとともに発振出力を入力された加熱条件に対応した出力が得られるように制御する。これにより、各増幅部5a〜5dはそれぞれ所定の高周波電力を出力する。そして、それぞれの出力は給電部7a〜7dに伝送され加熱室8内に放射される。   The control unit 10 controls the oscillation frequency of the oscillation units 2a and 2b and the phase difference of the phase variable units 4a to 4d where the high frequency reflected power is minimized, and obtains an output corresponding to the input heating condition. To be controlled. Thereby, each amplification part 5a-5d outputs predetermined high frequency electric power, respectively. Each output is transmitted to the power feeding units 7 a to 7 d and radiated into the heating chamber 8.

このように動作することで様々な形状・大きさ・量の異なる被加熱物に対しても高周波反射電力が最も小さくなる条件で加熱を開始することができ、増幅部5a〜5dに備えられた半導体素子が高周波反射電力によって過剰に発熱することを防止でき熱的な破壊を回避することができる。
なお、上記の説明では、位相可変部を2つ挿入した例で説明したが、電力分配部3aのいずれかの出力にのみ挿入し、その位相変化幅を0度から360度となるように構成することもできる。
By operating in this way, it is possible to start heating under the condition that the high-frequency reflected power is minimized even for objects to be heated having various shapes, sizes, and amounts, and the amplifiers 5a to 5d are provided. The semiconductor element can be prevented from excessively generating heat due to the high-frequency reflected power, and thermal destruction can be avoided.
In the above description, the example in which two phase variable units are inserted has been described. However, the phase change width is set to 0 degree to 360 degrees by inserting only one of the outputs of the power distribution unit 3a. You can also

また、第1、第2高周波電力供給手段に給電部を夫々設けて、夫々の給電部から加熱室へ放射される高周波の励振電界または励振磁界の方向を同じとし、かつ、制御部は第1、第2高周波電力供給手段の各電力検知部からの検知信号に基づいて、第1高周波電力供給手段および第2高周波電力供給手段の給電部から供給される高周波を独立して制御する構成としたが、高周波の制御は第1、第2高周波電力供給手段の一つとしてもよく、また、電力検知部はどちらか一方の高周波電力供給手段にのみ設けてその検知信号で両方の高周波電力供給手段を制御或は複数の給電部を有する高周波電力供給手段を制御してもよく、また、一方の高周波電力供給手段の給電部は一つとして単に高周波を供給するだけとしてもよく、本発明の趣旨の範囲で変更可能である。   Further, the first and second high-frequency power supply means are respectively provided with power supply units, the directions of the high-frequency excitation electric field or excitation magnetic field radiated from the respective power supply units to the heating chamber are the same, and the control unit is the first Based on the detection signal from each power detection unit of the second high frequency power supply unit, the high frequency supplied from the power supply unit of the first high frequency power supply unit and the second high frequency power supply unit is controlled independently. However, the high-frequency control may be one of the first and second high-frequency power supply means, and the power detection unit is provided only in one of the high-frequency power supply means, and both high-frequency power supply means are detected by the detection signal. Or the high frequency power supply means having a plurality of power supply sections may be controlled, or the power supply section of one of the high frequency power supply means may simply supply a high frequency as one. In the range Is a further possible.

以上、説明した高周波処理装置の制御方法によれば、第1高周波電力供給手段1Aおよび2高周波電力供給手段1Bの給電部7a〜7dから加熱室8に供給され、被加熱物9を介して戻ってくる高周波反射電力を検知して情報を得て、検知結果に応じて制御部10が第1高周波電力供給手段1Aおよび第2高周波電力供給手段1Bの給電部7a〜7dをそれぞれの高周波反射電力を最小とする条件で制御して被加熱物9の加熱調理を行うので、加熱効率の向上を図ることができることとなる。この際、制御部10は第1高周波電力供給手段1Aと第2高周波電力供給手段1Bとを独立して別個に制御することができ、第1高周波電力供給手段1Aと第2高周波電力供給手段1B間は相互干渉が少なく、それぞれの加熱に影響が出ないので、それぞれ検知した情報に基づいて、第1高周波電力供給手段1Aおよび第2高周波電力供給手段1Bをそれぞれの最適条件で制御して、効率のよい調理を行うことができる。   As described above, according to the control method of the high-frequency processing apparatus described above, the first high-frequency power supply means 1A and the second high-frequency power supply means 1B are supplied to the heating chamber 8 from the power feeding units 7a to 7d and return via the object 9 to be heated. Information is obtained by detecting the incoming high-frequency reflected power, and the control unit 10 controls the power supply units 7a to 7d of the first high-frequency power supply means 1A and the second high-frequency power supply means 1B according to the detection result. Since the cooking of the article to be heated 9 is performed under the condition that minimizes the heating, the heating efficiency can be improved. At this time, the control unit 10 can independently control the first high-frequency power supply means 1A and the second high-frequency power supply means 1B independently, and the first high-frequency power supply means 1A and the second high-frequency power supply means 1B. Since there is little mutual interference between the two, there is no effect on the respective heating, so based on the detected information, the first high-frequency power supply means 1A and the second high-frequency power supply means 1B are controlled under their optimum conditions, Efficient cooking can be performed.

次に、前述した高周波処理装置の制御方法について説明する。
図3は高周波処理装置の制御方法の全体の流れを示すフローチャート、図4は給電部における動作条件の決定の流れを示すフローチャート、図5は検知動作の流れを示すフローチャート、図6は検知動作の展開例を示すフローチャート、図7は調理の進捗状態の判断の流れを示すフローチャート、図8は動作条件の変更の流れを示すフローチャートである。
Next, a method for controlling the above-described high frequency processing apparatus will be described.
FIG. 3 is a flowchart showing the overall flow of the control method of the high-frequency processing apparatus, FIG. 4 is a flowchart showing the flow of determination of operating conditions in the power feeding unit, FIG. 5 is a flowchart showing the flow of detection operation, and FIG. FIG. 7 is a flowchart showing a flow of judgment of the cooking progress state, and FIG. 8 is a flowchart showing a flow of changing operating conditions.

この高周波処理装置の制御方法においては、第1高周波電力供給手段1Aの電力検知部6a、6bにより加熱室8から被加熱物9を介して戻る高周波反射電力を検知し、制御部10はこの高周波反射電力に基づいて第1高周波電力供給手段1Aおよび/または第2高周波電力供給手段1Bの給電部7a〜7dを独立して制御することにより、加熱室8に高周波電力を供給して加熱調理を行う。なお、高周波反射電力とは、給電部7aから加熱室8に放射された高周波が被加熱物9を介して同じ給電部7aに反射してくる反射高周波電力および被加熱物9を介して別の給電部7bへ透過した透過高周波電力を意味するものである。   In this method of controlling the high-frequency processing apparatus, the high-frequency reflected power returning from the heating chamber 8 through the object to be heated 9 is detected by the power detection units 6a and 6b of the first high-frequency power supply means 1A. By independently controlling the power feeding units 7a to 7d of the first high-frequency power supply means 1A and / or the second high-frequency power supply means 1B based on the reflected power, the high-frequency power is supplied to the heating chamber 8 for cooking. Do. The high-frequency reflected power is different from the high-frequency reflected power that is reflected from the high-frequency radiation radiated from the power supply unit 7 a to the heating chamber 8 through the heated object 9 to the same power supply unit 7 a and the heated object 9. The transmitted high-frequency power transmitted to the power feeding unit 7b is meant.

図3に示すように、被加熱物9の加熱調理を開始したら(ステップSS)、加熱室8の前面に設けられているドアが開状態から閉じられたか、あるいは、操作板11によるキー入力があったかを判断し(ステップS101)、いずれもない場合には引き続き監視をする。一方、ドアが開状態から閉じられた場合には、第1高周波電力供給手段1Aの給電部7a、7bを用いて高周波電力を加熱室8内に供給し、被加熱物9を介して戻る高周波反射電力を電力検知部6a、6bにより検知して検知を行い検知信号を制御部10に伝達する(ステップS102)。このとき、給電部7a、7bから加熱室8に供給される高周波電力の励振方向は、一致させる(図2(A)参照)。なお、図2(B)には、励振方向が一致しない場合の一例を示している。また、検知は、検知上必要最小限の電力、あるいは、所定の小電力を設定して行い、周波数を変動させながら行って周波数特性情報を得る。また、電力検知部6a、6bは、被加熱物9を透過した高周波電力および被加熱物9から反射した高周波電力の両方を高周波反射電力として検知する。   As shown in FIG. 3, when cooking of the article 9 to be heated is started (step SS), the door provided on the front surface of the heating chamber 8 is closed from the open state, or the key input by the operation plate 11 is performed. If there is none, the monitoring is continued. On the other hand, when the door is closed from the open state, the high-frequency power is supplied into the heating chamber 8 using the power feeding units 7a and 7b of the first high-frequency power supply means 1A, and the high frequency returned through the object 9 to be heated. The reflected power is detected and detected by the power detection units 6a and 6b, and a detection signal is transmitted to the control unit 10 (step S102). At this time, the excitation directions of the high-frequency power supplied from the power feeding units 7a and 7b to the heating chamber 8 are matched (see FIG. 2A). Note that FIG. 2B shows an example where the excitation directions do not match. Further, detection is performed by setting a minimum electric power necessary for detection or a predetermined small electric power and changing the frequency to obtain frequency characteristic information. In addition, the power detection units 6a and 6b detect both the high-frequency power transmitted through the object to be heated 9 and the high-frequency power reflected from the object to be heated 9 as high-frequency reflected power.

制御部10は、電力検知部6a、6bからの検知信号から、被加熱物9の有無を判断し(ステップS103)、被加熱物9が無いと判断された場合には、最初に戻る。被加熱物9が有ると判断された場合には、制御部10は第2高周波電力供給手段1Bによる加熱処理条件(第1動作条件)を決定する(ステップS104)。なお、ステップS101においてキー入力が有ったと判断された場合も同様に加熱処理条件を決定する。   The control unit 10 determines the presence or absence of the object 9 to be heated from the detection signals from the power detection units 6a and 6b (step S103), and when it is determined that there is no object 9 to be heated, the control unit 10 returns to the beginning. When it is determined that there is the article 9 to be heated, the control unit 10 determines a heat treatment condition (first operation condition) by the second high-frequency power supply unit 1B (step S104). In addition, also when it is judged that there existed key input in step S101, heat processing conditions are determined similarly.

加熱処理条件の決定においては、図4に示すように、制御部10は、加熱室8の対向する左右の壁面に設けられている第2高周波電力供給手段1Bの給電部7c、7dを小電力で同時に作動させ(ステップS201)、動作周波数および位相の決定を行う(ステップS202)。
動作周波数および位相の決定では、まず、動作周波数を変動させながら、反射電力が最小となる値を探して周波数を決定する。次いで、給電部7c、7d間の位相差を変動させながら、反射電力が最小となる値を探して位相を決定する。
In determining the heat treatment conditions, as shown in FIG. 4, the control unit 10 uses the power feeding units 7 c and 7 d of the second high-frequency power supply unit 1 </ b> B provided on the left and right wall surfaces facing the heating chamber 8 to reduce power. Are simultaneously operated (step S201), and the operating frequency and phase are determined (step S202).
In determining the operating frequency and phase, first, the frequency is determined by searching for a value that minimizes the reflected power while varying the operating frequency. Next, the phase is determined by searching for a value that minimizes the reflected power while varying the phase difference between the power feeding units 7c and 7d.

周波数および位相が決定された後、一定時間が経過したら(ステップS203)、設定条件をクリアして(ステップS106)、最初に戻る(図3参照)。一定時間が経過する前に、操作板11のメニューキーによって選択された場合には(ステップS204)、選択されたメニューと検知された動作条件とが両立するか否かを判断し(ステップS205)、両立しない場合には、条件を見直して(ステップS206)、ステップS202に戻って動作周波数および位相の決定を行う。ステップS205において選択メニューと動作条件とが両立すると判断された場合には第1動作条件の決定を終了する(ステップSE)。   After a certain time has elapsed after the frequency and phase are determined (step S203), the setting condition is cleared (step S106), and the process returns to the beginning (see FIG. 3). If the menu key on the operation panel 11 is selected before the fixed time has elapsed (step S204), it is determined whether the selected menu is compatible with the detected operating condition (step S205). If they are not compatible, the conditions are reviewed (step S206), and the process returns to step S202 to determine the operating frequency and phase. If it is determined in step S205 that the selection menu and the operating condition are compatible, the determination of the first operating condition is terminated (step SE).

再び図3を参照し、ステップS104において第1動作条件が決定されると、一定の時間が経過するまで監視して(ステップS105)、一定時間が経過したら設定条件をクリアして(ステップS106)、最初に戻る。一定時間が経過する前に操作板11のスタートキーの入力があれば(ステップS107)、設定された条件で調理を開始する(ステップS108)。
すなわち、制御部10は、決定された第1動作条件に従って第2高周波電力供給手段1Bの給電部7c、7dを制御して調理を開始し(ステップS109)、第1高周波電力供給手段1Aの給電部7a、7bを制御して検知を行う(ステップS110)。
Referring to FIG. 3 again, when the first operating condition is determined in step S104, monitoring is performed until a predetermined time elapses (step S105), and the setting condition is cleared when the predetermined time elapses (step S106). Return to the beginning. If there is an input of the start key of the operation panel 11 before the fixed time has elapsed (step S107), cooking is started under the set conditions (step S108).
That is, the control unit 10 starts cooking by controlling the power supply units 7c and 7d of the second high-frequency power supply unit 1B according to the determined first operating condition (step S109), and supplies power to the first high-frequency power supply unit 1A. The units 7a and 7b are controlled to perform detection (step S110).

検知においては、図5に示すように、制御部10は第2高周波電力供給手段1Bの給電部7c、7dによって前述した動作条件に基づいて加熱調理を継続して行う(ステップS301)とともに、第1高周波電力供給手段1Aの複数(ここでは2個)の給電部7a、7bを作動させて検知を行う(ステップS302)。検知は、給電部7a、7bから供給される高周波電力の周波数および各給電部7a、7b間の位相差を変動させて行い、高周波反射電力を電力検知部6a、6bによって検知して、制御部10に伝達する。解凍等の特定な検知が必要なメニューか否かを判断し(ステップS303)、必要なメニューでない場合には検知を終了して(ステップSE31)、ステップS110に戻る。特定な検知が必要な場合には、制御部10は第1高周波電力供給手段1Aの複数の給電部7a、7bを用いて検知を行う(ステップS304)。この際、意図的な電波分布となる位相で動作させて、被加熱物9の特定負荷部位を検知して、ステップS110に戻る。   In the detection, as shown in FIG. 5, the control unit 10 continuously performs cooking based on the above-described operating conditions by the power supply units 7 c and 7 d of the second high-frequency power supply unit 1 </ b> B (step S <b> 301). Detection is performed by operating a plurality (two in this case) of power supply units 7a and 7b of one high-frequency power supply unit 1A (step S302). The detection is performed by changing the frequency of the high frequency power supplied from the power supply units 7a and 7b and the phase difference between the power supply units 7a and 7b, and the high frequency reflected power is detected by the power detection units 6a and 6b. 10 is transmitted. It is determined whether or not the menu requires specific detection such as thawing (step S303). If the menu is not necessary, the detection ends (step SE31), and the process returns to step S110. When specific detection is required, the control unit 10 performs detection using the plurality of power supply units 7a and 7b of the first high-frequency power supply unit 1A (step S304). At this time, the operation is performed with a phase having an intentional radio wave distribution, the specific load portion of the article 9 to be heated is detected, and the process returns to step S110.

図6には、別の検知動作が示されている。すなわち、図5において前述したように、制御部10は第2高周波電力供給手段1Bの給電部7c、7dによって前述した動作条件に基づいて加熱調理を継続して行う(ステップS301)。そして、1箇所の給電部7a(または7b)を用いて動作周波数を変動させ、自身への反射高周波電力および他の給電部7b(または7a)への透過高周波電力を用いて検知を行う(ステップS305)。そして、必要な情報がそろったか判断し(ステップS306)、まだそろっていないと判断された場合には給電部7a、7bを切り替えて(ステップS307)、ステップS305に戻って検知を行う。一方、必要な情報がそろった場合には、検知を終了して(ステップSE32)、ステップS110に戻る。
なお、図5および図6で説明した検知動作は、いずれか一方を用いることができるが、両方を併用することも可能である。
FIG. 6 shows another detection operation. That is, as described above with reference to FIG. 5, the control unit 10 continuously performs cooking by using the power supply units 7 c and 7 d of the second high-frequency power supply unit 1 </ b> B based on the operation conditions described above (step S <b> 301). Then, the operating frequency is varied using one power supply unit 7a (or 7b), and detection is performed using the reflected high-frequency power to itself and the transmitted high-frequency power to another power supply unit 7b (or 7a) (step) S305). Then, it is determined whether necessary information has been collected (step S306). When it is determined that the necessary information has not been collected, the power feeding units 7a and 7b are switched (step S307), and the process returns to step S305 to perform detection. On the other hand, if the necessary information is available, the detection ends (step SE32) and the process returns to step S110.
Note that either one of the detection operations described in FIGS. 5 and 6 can be used, but both can be used together.

再び図3を参照し、ステップS110において前述した検知を行った後、赤外線センサー等の他の検知手段がある場合にはこれらの検知手段から検知情報を得て(ステップS111)、先の検知結果と合わせて調理の進捗状態を判断する(ステップS112)。   Referring to FIG. 3 again, after performing the above-described detection in step S110, if there is other detection means such as an infrared sensor, detection information is obtained from these detection means (step S111), and the previous detection result And the progress of cooking is determined (step S112).

図7に示すように、調理の進捗状態の判断では、制御部10は第2高周波電力供給手段1Bの給電部7c、7dを制御して指定動作条件で加熱調理を継続しながら(ステップS401)、検知による検知情報を取得する(ステップS402)。検知情報としては、第1高周波電力供給手段1Aの給電部7a、7bから供給され電力検知部6a、6bによって検知された高周波反射電力の周波数および位相特性、併用されている他の検知手段による温度や湿度等の情報がある。   As shown in FIG. 7, in determining the progress of cooking, the control unit 10 controls the power supply units 7c and 7d of the second high-frequency power supply unit 1B to continue cooking under designated operating conditions (step S401). Then, detection information by detection is acquired (step S402). The detection information includes the frequency and phase characteristics of the high-frequency reflected power supplied from the power supply units 7a and 7b of the first high-frequency power supply unit 1A and detected by the power detection units 6a and 6b, and the temperature of other detection units used in combination. There is information such as humidity.

制御部10は、得られた検知情報から、温度上昇、電力吸収量の変動を得て、負荷である被加熱物9の有無を判断する(ステップS403)。被加熱物9が無いと判断された場合には、被加熱物9がないため終了するとの表示をして(ステップS404)、調理が終了したと記憶して調理の進捗状態の判定を終了しステップS112に戻る(ステップSE41)。一方、ステップ403において被加熱物9が有ると判断された場合には、先に決定された選択メニューの終了に対応する検知結果か否かを判断し(ステップS405)、選択メニューの終了であると判断される場合には、調理が終了したと記憶して調理の進捗状態の判定を終了しステップS112に戻る(ステップSE41)。また、ステップ405において選択メニューの終了と認められない場合には、選択メニューの加熱時間の上限を超えているかを判断し(ステップS406)、上限時間を超えていると判断された場合には、調理が終了したと記憶して調理の進捗状態の判定を終了しステップS112に戻る(ステップSE41)。一方、ステップS406において上限時間を超えていると判断されない場合には、調理の継続を記憶してステップS112に戻る(ステップSE42)。   The control unit 10 obtains the temperature rise and the fluctuation of the power absorption amount from the obtained detection information, and determines the presence or absence of the heated object 9 as a load (step S403). When it is determined that there is no object 9 to be heated, a display indicating that the object to be heated 9 is completed is displayed (step S404), the cooking is completed, and the determination of the cooking progress state is terminated. The process returns to step S112 (step SE41). On the other hand, if it is determined in step 403 that there is an object 9 to be heated, it is determined whether or not the detection result corresponds to the end of the previously selected selection menu (step S405), and the selection menu ends. When it is determined that the cooking has been completed, the cooking is completed, the cooking progress state is determined, and the process returns to step S112 (step SE41). In addition, when it is not recognized that the selection menu ends in step 405, it is determined whether or not the upper limit of the heating time of the selection menu is exceeded (step S406), and when it is determined that the upper limit time is exceeded, It memorize | stores that cooking was complete | finished, complete | finishes determination of the progress state of cooking, and returns to step S112 (step SE41). On the other hand, if it is not determined in step S406 that the upper limit time has been exceeded, the continuation of cooking is stored and the process returns to step S112 (step SE42).

図3に戻って、ステップS112における調理の進捗状態の判断において調理が終了したと判断された場合には、調理を終了する(ステップSE)。一方、ステップS112における調理の進捗状態の判断において調理の継続と判断された場合には、動作条件の変更が必要か否かを判断し(ステップS113)、必要ないと判断された場合にはステップS110に戻って再度検知を行う。また、ステップS113において動作条件の変更が必要であると判断された場合には、以下のようにして動作条件の変更を行う(ステップS114)。   Returning to FIG. 3, when it is determined that cooking is completed in the determination of the cooking progress state in step S <b> 112, cooking is ended (step SE). On the other hand, when it is determined that cooking is continued in the determination of the cooking progress state in step S112, it is determined whether or not the operating condition needs to be changed (step S113). Returning to S110, detection is performed again. If it is determined in step S113 that the operating condition needs to be changed, the operating condition is changed as follows (step S114).

動作条件の変更においては、図8に示すように、選択メニューのシーケンスと進捗判定結果から、相応した動作条件を割り出す(ステップS501)。動作条件が進捗状況に相応しているか否かを判断し(ステップS502)、相応していると判断された場合には、第2高周波電力供給手段1Bの給電部7c、7dおよび電力検知部6c、6dを用いて検知を行い、被加熱物9からの高周波反射電力が増加していないかを判断する(ステップS503)。高周波反射電力が増加していない場合には、動作条件の変更はないと記憶してステップS113を経てステップS110に戻って検知を行う(ステップSE51)。   In changing the operating condition, as shown in FIG. 8, the corresponding operating condition is determined from the sequence of the selection menu and the progress determination result (step S501). It is determined whether or not the operating condition corresponds to the progress status (step S502). If it is determined that the operating condition corresponds, the power supply units 7c and 7d and the power detection unit 6c of the second high-frequency power supply unit 1B are determined. , 6d is used to determine whether the high-frequency reflected power from the object to be heated 9 has increased (step S503). If the high-frequency reflected power is not increased, it is stored that there is no change in the operating condition, and the process returns to step S110 through step S113 to perform detection (step SE51).

一方、ステップS502において動作条件が進捗状況に相応していないと判断された場合には、選択メニューのシーケンスに合わせて動作条件を変更し(ステップS504)、動作周波数および位相の見直しを行う(ステップS505)。また、ステップS503において第2高周波電力供給手段1Bによる検知で、高周波反射電力が増加したと判断された場合も動作周波数および位相の見直しを行う(ステップS505)。見直しは、まず、動作周波数を変動させながら高周波反射電力(反射電力)が最小となる値を探して周波数を決定する。次に、給電部間の位相差を変動させながら高周波反射電力が最小となる値を探して位相を決定する。   On the other hand, if it is determined in step S502 that the operating condition does not correspond to the progress, the operating condition is changed in accordance with the sequence of the selection menu (step S504), and the operating frequency and phase are reviewed (step S504). S505). Also, when it is determined in step S503 that the high-frequency reflected power has increased as a result of detection by the second high-frequency power supply means 1B, the operating frequency and phase are reviewed (step S505). In the review, first, the frequency is determined by searching for a value that minimizes the high-frequency reflected power (reflected power) while changing the operating frequency. Next, the phase is determined by searching for a value that minimizes the high-frequency reflected power while varying the phase difference between the power feeding units.

続いて、加熱動作条件の変更を行う(ステップS506)。加熱動作条件の変更は、第1高周波電力供給手段1Aおよび第2高周波電力供給手段1Bの給電部7a〜7dを用いて行い、動作周波数、給電部間の位相差、動作火力を決定し、動作条件の変更を終了して(ステップSE52)、ステップS113に戻る。   Subsequently, the heating operation condition is changed (step S506). The heating operation condition is changed using the power supply units 7a to 7d of the first high-frequency power supply unit 1A and the second high-frequency power supply unit 1B, and the operation frequency, the phase difference between the power supply units, and the operation thermal power are determined. The change of the condition is finished (step SE52), and the process returns to step S113.

図3に戻って、動作条件の変更が必要ないとされた場合にはステップS110に戻って再度検知を行う。一方、動作条件の変更が行われた場合には(ステップS114)、ステップ109に戻って加熱を開始する。   Returning to FIG. 3, when it is determined that the operating condition does not need to be changed, the process returns to step S <b> 110 and detection is performed again. On the other hand, when the operating condition is changed (step S114), the process returns to step 109 to start heating.

以上、説明した高周波処理装置の制御方法によれば、第1高周波電力供給手段1Aの給電部7a、7bから加熱室8に供給され、被加熱物9を介して戻ってくる高周波反射電力を検知して情報を得て、検知結果に応じて制御部10が第1高周波電力供給手段1Aや第2高周波電力供給手段1Bの給電部7a〜7dを制御して被加熱物9の加熱調理を行うので、加熱効率の向上を図ることができることとなる。この際、制御部10は第1高周波電力供給手段1Aと第2高周波電力供給手段1Bとを独立して別個に制御することができるので、第1高周波電力供給手段1Aによって検知した情報に基づいて、第1高周波電力供給手段1Aおよび第2高周波電力供給手段1Bを制御して、効率のよい調理を行うことができることとなる。この場合、第1高周波電力供給手段1Aによって検知を行う際に、第2高周波電力供給手段1Bによる調理を停止させてもよいが、継続させることもできる。
また、第1高周波電力供給手段の給電部による高周波の周波数と、第2高周波電力供給手段の給電部による前記高周波の周波数とが異なるようにして、第2高周波電力供給手段によって調理しながら第1高周波電力供給手段によって精度のよい検知を行うのが望ましい。
As described above, according to the control method of the high-frequency processing apparatus described above, the high-frequency reflected power supplied to the heating chamber 8 from the power feeding units 7a and 7b of the first high-frequency power supply means 1A and returned through the object to be heated 9 is detected. Thus, information is obtained, and the control unit 10 controls the power supply units 7a to 7d of the first high-frequency power supply unit 1A and the second high-frequency power supply unit 1B according to the detection result to perform cooking of the article 9 to be heated. Therefore, the heating efficiency can be improved. At this time, since the control unit 10 can independently control the first high-frequency power supply unit 1A and the second high-frequency power supply unit 1B independently, based on the information detected by the first high-frequency power supply unit 1A. The first high frequency power supply means 1A and the second high frequency power supply means 1B can be controlled to perform efficient cooking. In this case, when the detection is performed by the first high-frequency power supply unit 1A, cooking by the second high-frequency power supply unit 1B may be stopped, but may be continued.
In addition, the first high frequency power supply means cooks the first high frequency power supply means so that the high frequency frequency by the power supply section of the first high frequency power supply means is different from the high frequency frequency of the second high frequency power supply means. It is desirable to perform accurate detection by the high frequency power supply means.

次に、本発明にかかる高周波処理装置の第2の実施の形態について説明する。
図9は本発明の第2の実施の形態にかかる高周波処理装置を示す構成図である。なお、前述した第1の実施の形態にかかる高周波処理装置と共通する部位には同じ符号を付して、重複する説明を省略することとする。
Next, a second embodiment of the high-frequency processing device according to the present invention will be described.
FIG. 9 is a block diagram showing a high frequency processing apparatus according to the second embodiment of the present invention. In addition, the same code | symbol is attached | subjected to the site | part which is common in the high frequency processing apparatus concerning 1st Embodiment mentioned above, and the overlapping description is abbreviate | omitted.

図9に示すように、第2の実施の形態にかかる高周波処理装置は、加熱室8における互いに対向する一対の壁面のうちの一方(左壁面)に第1高周波電力供給手段1Aにおける給電部7a、7bのうちの一方(7a)と、第2供給手1Bにおける給電部7c、7dのうちの一方(7c)とが設けられ、加熱室8における互いに対向する一対の壁面のうちの他方(右壁面)に第1高周波電力供給手段1Aにおける給電部7a、7bのうちの他方(7b)と、第2高周波電力供給手段1Bにおける給電部7c、7dのうちの他方(7d)とが設けられている。すなわち、第1高周波電力供給手段1Aの給電部7a、7bと第2高周波電力供給手段1Bの給電部7c、7dが同じ対向する壁面に設けられることとなる。   As shown in FIG. 9, the high frequency processing apparatus according to the second embodiment has a power feeding section 7a in the first high frequency power supply means 1A on one (left wall surface) of a pair of opposing wall surfaces in the heating chamber 8. 7b and one of the power supply portions 7c and 7d (7c) in the second supplier 1B are provided, and the other of the pair of wall surfaces facing each other in the heating chamber 8 (right The wall surface is provided with the other one of the power supply portions 7a and 7b in the first high frequency power supply means 1A (7b) and the other of the power supply portions 7c and 7d in the second high frequency power supply means 1B (7d). Yes. That is, the power supply portions 7a and 7b of the first high-frequency power supply means 1A and the power supply portions 7c and 7d of the second high-frequency power supply means 1B are provided on the same opposing wall surface.

このように構成しても、前述した第1の実施の形態の場合と同様の作用効果を得ることができる。   Even if comprised in this way, the effect similar to the case of 1st Embodiment mentioned above can be acquired.

なお、本発明の高周波処理装置は、前述した各実施の形態に限定されるものでなく、適宜な変形、改良等が可能である。   The high-frequency processing apparatus of the present invention is not limited to the above-described embodiments, and appropriate modifications and improvements can be made.

また、給電部7a〜7dの配置は前述した図1および図9に示す場合に拘束されるものではなくいずれかの壁面に複数の給電部を設けてもよいし、対向面ではない例えば右壁面と底壁面のような隣接する組合せで対となる給電部を構成してもかまわない。例えば、第1高周波電力供給手段における給電部および第2高周波電力供給手段における給電部を、加熱室における同一の壁面にそれぞれ設けることもできる。これにより、第1高周波電力供給手段の給電部および第2高周波電力供給手段の給電部をすべて加熱室の同一壁面に設けたので、配線および構造が簡単になる。   Further, the arrangement of the power feeding portions 7a to 7d is not restricted in the case shown in FIGS. 1 and 9 described above, and a plurality of power feeding portions may be provided on any one of the wall surfaces. A pair of adjacent power supply units such as a bottom wall surface may be configured. For example, the power supply unit in the first high-frequency power supply unit and the power supply unit in the second high-frequency power supply unit can be provided on the same wall surface in the heating chamber, respectively. As a result, since the power supply unit of the first high-frequency power supply unit and the power supply unit of the second high-frequency power supply unit are all provided on the same wall surface of the heating chamber, the wiring and structure are simplified.

また、第1高周波電力供給手段1Aを主に検知用とし、第2高周波電力供給手段1Bを主に調理用としたが、これに限定するものではない。例えば、調理の進捗あるいは被加熱物9に応じて最適な加熱パターンを得ることができるように第2高周波電力供給手段1Bを主に検知用とし、第1高周波電力供給手段を主に調理用とすることもできる。   Moreover, although the 1st high frequency electric power supply means 1A was mainly used for detection and the 2nd high frequency electric power supply means 1B was mainly used for cooking, it is not limited to this. For example, the second high frequency power supply means 1B is mainly used for detection and the first high frequency power supply means is mainly used for cooking so that an optimum heating pattern can be obtained according to the progress of cooking or the object 9 to be heated. You can also

以上のように、本発明にかかる高周波処理装置は、第1高周波電力供給手段の給電部から加熱室に供給され、被加熱物を介して戻ってくる高周波反射電力を検知して情報を得て、検知結果に応じて第1高周波電力供給手段や第2高周波電力供給手段の給電部を制御して被加熱物の加熱調理を行うので、加熱効率の向上を図ることができるという効果を有し、被加熱物を検知し、検知結果に基づいて被加熱物を加熱調理する高周波処理装置等として有用である。   As described above, the high-frequency processing apparatus according to the present invention obtains information by detecting the high-frequency reflected power supplied to the heating chamber from the power feeding unit of the first high-frequency power supply means and returning through the object to be heated. Since the cooking of the object to be heated is performed by controlling the power feeding unit of the first high-frequency power supply means or the second high-frequency power supply means according to the detection result, the heating efficiency can be improved. It is useful as a high-frequency processing apparatus that detects an object to be heated and cooks the object to be heated based on the detection result.

本発明の第1の実施の形態における高周波処理装置の構成図The block diagram of the high frequency processing apparatus in the 1st Embodiment of this invention (A)は給電部による励振方向が同一の場合を示す説明図、(B)は給電部による励振方向が異なる場合を示す説明図(A) is explanatory drawing which shows the case where the excitation direction by a feed part is the same, (B) is explanatory drawing which shows the case where the excitation direction by a feed part differs 高周波処理装置の制御方法の全体の流れを示すフローチャートFlow chart showing overall flow of control method of high-frequency processing apparatus 給電部における動作条件の決定の流れを示すフローチャートFlow chart showing the flow of determination of operating conditions in the power feeding unit 検知動作の流れを示すフローチャートFlow chart showing the flow of detection operation 検知動作の展開例を示すフローチャートFlow chart showing an example of detection operation deployment 調理の進捗状態の判断の流れを示すフローチャートFlow chart showing flow of determination of cooking progress 動作条件の変更の流れを示すフローチャートFlow chart showing the flow of changing operating conditions 本発明の第2の実施の形態における高周波処理装置の構成図The block diagram of the high frequency processing apparatus in the 2nd Embodiment of this invention

符号の説明Explanation of symbols

1A 第1高周波電力供給手段
1B 第2高周波電力供給手段
2a、2b 発振部
6a〜6d 電力検知部
7a〜7d 給電部
8 加熱室
9 被加熱物
10 制御部
DESCRIPTION OF SYMBOLS 1A 1st high frequency electric power supply means 1B 2nd high frequency electric power supply means 2a, 2b Oscillation part 6a-6d Electric power detection part 7a-7d Feeding part 8 Heating chamber 9 To-be-heated object 10 Control part

Claims (5)

被加熱物を収容する加熱室と、
高周波電力を発生させる発振部と、前記発振部で発生された高周波電力を前記加熱室内に供給する給電部と、前記加熱室から前記発振部方向に戻る高周波反射電力を検知する電力検知部とを有する第1高周波電力供給手段と、
高周波電力を発生させる発振部と、前記発振部で発生された高周波電力を前記加熱室内に供給する給電部とを有する第2高周波電力供給手段と、
前記第1高周波電力供給手段の電力検知部からの検知信号に基づいて、前記第1高周波電力供給手段および前記第2高周波電力供給手段の少なくとも一方の給電部から供給される高周波電力及び/または発振周波数を制御する制御部と、を備え、
前記第1高周波電力供給手段の給電部による高周波電力と前記第2高周波電力供給手段の給電部による高周波電力との間で励振電界および励振磁界の方向を異ならせた高周波処理装置。
A heating chamber for storing an object to be heated;
An oscillating unit that generates high-frequency power, a power supply unit that supplies high-frequency power generated by the oscillating unit to the heating chamber, and a power detection unit that detects high-frequency reflected power returning from the heating chamber toward the oscillating unit. First high frequency power supply means comprising:
A second high-frequency power supply means comprising: an oscillating unit that generates high-frequency power; and a power supply unit that supplies the high-frequency power generated by the oscillating unit into the heating chamber;
Based on a detection signal from a power detection unit of the first high-frequency power supply unit, high-frequency power and / or oscillation supplied from at least one power supply unit of the first high-frequency power supply unit and the second high-frequency power supply unit A control unit for controlling the frequency,
A high frequency processing apparatus in which the directions of the excitation electric field and the excitation magnetic field are different between the high frequency power from the power supply unit of the first high frequency power supply means and the high frequency power from the power supply unit of the second high frequency power supply means.
前記第1高周波電力供給手段の給電部および電力検知部が複数であり、
前記制御部は、前記第1高周波電力供給手段の複数の電力検知部からの検知信号に基づいて、前記第1高周波電力供給手段および前記第2高周波電力供給手段の少なくとも一方の給電部から供給される高周波電力及び/または発振周波数または、前記第1高周波電力供給手段の給電部から供給される高周波の位相を制御し、
前記第1高周波電力供給手段の複数の給電部による高周波電力の励振電界または励振磁界の方向を一致させた請求項1に記載の高周波処理装置。
There are a plurality of power supply units and power detection units of the first high-frequency power supply means,
The control unit is supplied from at least one of the first high frequency power supply unit and the second high frequency power supply unit based on detection signals from a plurality of power detection units of the first high frequency power supply unit. Controlling the phase of the high frequency power and / or the oscillation frequency or the high frequency supplied from the power supply unit of the first high frequency power supply means,
The high frequency processing apparatus according to claim 1, wherein directions of an excitation electric field or an excitation magnetic field of the high frequency power by the plurality of power feeding units of the first high frequency power supply unit are matched.
前記第2高周波電力供給手段の給電部が複数であり、前記第2高周波電力供給手段に更に前記加熱室から前記第2高周波電力供給手段の発振部方向に戻る高周波反射電力を検知する複数の電力検知部を設け、
前記制御部は、前記第1高周波電力供給手段の複数の電力検知部からの検知信号および前記第2高周波電力供給手段の複数の電力検知部からの検知信号に基づいて、前記第1高周波電力供給手段および前記第2高周波電力供給手段の少なくとも一方の給電部から供給される高周波電力及び/または発振周波数または、位相を制御し、
前記第2高周波電力供給手段の複数の給電部による高周波電力の励振電界または励振磁界の方向を一致させた請求項2に記載の高周波処理装置。
The second high frequency power supply means has a plurality of power supply sections, and the second high frequency power supply means further detects a high frequency reflected power returning from the heating chamber toward the oscillation section of the second high frequency power supply means. Provide a detector,
The control unit is configured to supply the first high-frequency power supply based on detection signals from a plurality of power detection units of the first high-frequency power supply unit and detection signals from a plurality of power detection units of the second high-frequency power supply unit. High frequency power and / or oscillation frequency or phase supplied from at least one of the power supply means of the means and the second high frequency power supply means,
The high frequency processing apparatus according to claim 2, wherein directions of an excitation electric field or an excitation magnetic field of the high frequency power by the plurality of power feeding units of the second high frequency power supply unit are matched.
前記第1高周波電力供給手段の複数の給電部が前記加熱室において互いに対向する一対の壁面にそれぞれの励振電界または励振磁界の方向が一致するよう設けられ、
前記第2高周波電力供給手段の複数の給電部が前記第1高周波電力供給手段の複数の給電部が設けられた壁面とは別の壁面、かつ、互いに対向する一対の壁面にそれぞれの励振電界または励振磁界の方向が一致し、かつ、前記第1高周波電力供給手段の複数の給電部の励振電界および励振磁界の方向と異なるよう設けられている請求項3に記載の高周波処理装置。
A plurality of power feeding portions of the first high-frequency power supply means are provided on a pair of wall surfaces facing each other in the heating chamber so that the directions of the excitation electric field or the excitation magnetic field coincide with each other,
The plurality of power feeding portions of the second high frequency power supply means are different from the wall surface provided with the plurality of power feeding portions of the first high frequency power supply means, and a pair of wall surfaces facing each other, The high frequency processing apparatus according to claim 3, wherein the directions of the excitation magnetic fields coincide with each other and are different from the directions of the excitation electric field and the excitation magnetic field of the plurality of power feeding units of the first high frequency power supply unit.
前記加熱室における互いに対向する一対の壁面のうちの一方に前記第1高周波電力供給手段の複数の給電部のうちの一方と、前記第2高周波電力供給手段の複数の給電部のうちの一方とが設けられ、
前記加熱室における互いに対向する一対の壁面のうちの他方に前記第1高周波電力供給手段の複数の給電部のうちの他方と、前記第2高周波電力供給手段の複数の給電部のうちの他方とが設けられ、
更に、前記第1高周波電力供給手段および前記第2高周波電力供給手段毎に励振電界または励振磁界の方向を一致させ、かつ、前記第1高周波電力供給手段および前記第2高周波電力供給手段間で励振電界および励振磁界の方向を異ならせた請求項3に記載の高周波処理装置。
One of a plurality of power supply portions of the first high-frequency power supply means and one of a plurality of power supply portions of the second high-frequency power supply means on one of a pair of opposing wall surfaces in the heating chamber Is provided,
The other of the plurality of power feeding sections of the first high frequency power supply means and the other of the plurality of power feeding sections of the second high frequency power supply means on the other of the pair of wall surfaces facing each other in the heating chamber Is provided,
Further, the direction of the excitation electric field or the excitation magnetic field is made to coincide for each of the first high-frequency power supply means and the second high-frequency power supply means, and excitation is performed between the first high-frequency power supply means and the second high-frequency power supply means. The high frequency processing apparatus according to claim 3, wherein the directions of the electric field and the excitation magnetic field are different.
JP2007312601A 2007-12-03 2007-12-03 High frequency processing equipment Expired - Fee Related JP5127038B2 (en)

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