JP2006012605A - Microwave irradiation treating device - Google Patents

Microwave irradiation treating device Download PDF

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JP2006012605A
JP2006012605A JP2004188139A JP2004188139A JP2006012605A JP 2006012605 A JP2006012605 A JP 2006012605A JP 2004188139 A JP2004188139 A JP 2004188139A JP 2004188139 A JP2004188139 A JP 2004188139A JP 2006012605 A JP2006012605 A JP 2006012605A
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microwave
irradiation
processing apparatus
irradiating
processing
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JP3960612B2 (en
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Kiyoshi Shimada
清 嶋田
Kazumasa Kuriyama
一政 栗山
Toshiharu Ikoma
俊治 生駒
Hiroyoshi Nobata
博敬 野畑
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SPC Electronics Corp
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SPC Electronics Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a microwave irradiation treating device surely preventing uneven drying or uneven heating of an object to be treated by irradiating microwave not only from the top and bottom face but also from the side face. <P>SOLUTION: The microwave irradiation treating device, drying or raising the temperature of the object to be treated by transferring the object to be treated 1 into a treatment tank 10, guiding microwave generated at microwave generators 12a, 13a through a wave guide 16, and irradiating it on the upper face and lower face of the object to be treated, comprises a treatment tank 10 treating the object to be treated and a conveyor 11 transferring the object to be treated 1 from the front side to the rear side. A first irradiating means 12 capable of irradiating the microwave from the top and bottom sides and a second irradiating means 13 capable of irradiating from both side are provided in the treatment tank 10. Here, a control means 19, capable of controlling the microwave irradiated from respective direction to the treatment tank 10 through the wave guide simultaneously or separately is connected to the microwave generators 12a, 13a. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、マイクロ波照射処理装置に係り、より詳細には、例えば、民生用の調理以外で工業用分野に用いられ、電子部品、鋳物、セラミック、食品、化学合成などの処置物に、マイクロ波を照射して温度を上げたり(加熱)、乾燥、殺菌、或いは化学反応を促進させたりするマイクロ波照射処理装置に関する。   The present invention relates to a microwave irradiation processing apparatus, and more specifically, for example, is used in industrial fields other than cooking for consumer use, and is used for treatment items such as electronic parts, castings, ceramics, foods, and chemical synthesis. The present invention relates to a microwave irradiation processing apparatus that raises a temperature by applying waves (heating), promotes drying, sterilization, or chemical reaction.

従来のマイクロ波照射処理装置は、例えば、民生用の調理以外で工業用分野に用いられて電子部品、鋳物、セラミック、食品、化学合成物などの処理物に、マイクロ波を照射して温度を上げたり(加熱)、乾燥や殺菌、或いは化学反応を促進させたりするための装置であって、処理槽内に搬入した処理物の上下いずれか一方或いは両方からマイクロ波発生器で発生したマイクロ波を導入及び照射して処理する装置がよく知られている(例えば、特許文献1〜3参照。)。
特開2003−145521号公報(第7頁、第9図) 特開2002−283331号公報 特開平6−165660号公報
Conventional microwave irradiation processing apparatuses are used in industrial fields other than for cooking for consumer use, for example, to irradiate microwaves to processed products such as electronic parts, castings, ceramics, foods, and chemical compounds. A device for raising (heating), drying, sterilizing, or promoting a chemical reaction, which is generated by a microwave generator from one or both of the upper and lower sides of the processed material carried into the processing tank. Is well known (for example, see Patent Documents 1 to 3).
Japanese Unexamined Patent Publication No. 2003-145521 (page 7, FIG. 9) JP 2002-283331 A JP-A-6-165660

前者の方法による例を、図10にて説明する。図10は、従来のマイクロ波照射処理装置の一実施形態を示す構成図である。図10に示すように、従来のマイクロ波照射処理装置の一実施形態は、電子部品、鋳物、セラミック、食品、化学合成物などの処理物1をコンベア31により前面から搬入して後面に搬出する搬送中に処理することが可能なコンベア式の処理槽30を備え、この処理槽30内にコンベア31で搬入した処理物1を上下面いずれか一方或いは両方(図10では両方)から導波管36を介してマイクロ波発生器32により発生させたマイクロ波を導入及び照射して乾燥または温度を上げることを可能にしている。   An example of the former method will be described with reference to FIG. FIG. 10 is a block diagram showing an embodiment of a conventional microwave irradiation processing apparatus. As shown in FIG. 10, in one embodiment of a conventional microwave irradiation processing apparatus, a processed object 1 such as an electronic component, a casting, a ceramic, a food, a chemical composition, etc. is carried from the front by a conveyor 31 and carried to the rear. A conveyor-type treatment tank 30 that can be processed during conveyance is provided, and the processed material 1 carried into the treatment tank 30 by the conveyor 31 is guided from either one or both of the upper and lower surfaces (both in FIG. 10). It is possible to introduce and irradiate the microwave generated by the microwave generator 32 via 36 to increase the drying or temperature.

このような構成からなる従来のマイクロ波照射処理装置の一実施形態は、まず、他の製造工程から搬送した処理物1をコンベア31に移し変えることで、複数の処理物1を順次処理槽30内に搬入する。そして、処理槽30内では、マイクロ波発生器32で発生したマイクロ波が導波管36を介してコンベア31により搬入した処理物1に向かって上下面から照射されることで、処理物1の乾燥または加熱などの処理を実行する。その後、処理槽30内から搬出された処理物1は、乾燥または加熱などの処理を終えた製品としてコンベア31により搬出されて次工程に搬送される。   In one embodiment of a conventional microwave irradiation processing apparatus having such a configuration, first, a plurality of processed objects 1 are sequentially processed into a processing tank 30 by transferring the processed object 1 conveyed from another manufacturing process to a conveyor 31. Carry in. And in the processing tank 30, the microwave which generate | occur | produced with the microwave generator 32 is irradiated from the upper and lower surfaces toward the processed material 1 carried in by the conveyor 31 via the waveguide 36, and thereby the processed material 1 Perform processing such as drying or heating. Thereafter, the processed product 1 unloaded from the processing tank 30 is unloaded by the conveyor 31 as a product that has been subjected to processing such as drying or heating, and is conveyed to the next step.

このように従来のマイクロ波照射処理装置は、コンベア31により処理槽30内に搬入した処理物1の上下面からマイクロ波を照射する方式を採用することで、処理物1の内外を同時に乾燥または加熱可能に設けていた。   Thus, the conventional microwave irradiation processing apparatus employs a method of irradiating microwaves from the upper and lower surfaces of the processing object 1 carried into the processing tank 30 by the conveyor 31 so that the inside and outside of the processing object 1 can be simultaneously dried or It was provided so that it could be heated.

しかしながら、従来のマイクロ波照射処理装置では、搬送する処理物1の上下部だけにマイクロ波を照射する方式がとられているため、処理物1全体における均一な温度上昇及び処理物1全体の温度分布にムラが発生しやすく、処理後の処理物1に乾燥ムラ、加熱ムラが生じてしまうという不具合があった。   However, since the conventional microwave irradiation processing apparatus employs a method of irradiating only the upper and lower portions of the processed object 1 to be conveyed, the uniform temperature rise in the entire processed object 1 and the temperature of the entire processed object 1 There is a problem that unevenness is likely to occur in the distribution, and drying unevenness and heating unevenness occur in the processed product 1 after processing.

本発明はこのような課題を解決し、マイクロ波の照射を処理物の上下面のみならず側面からも照射可能にし、処理物の乾燥ムラまたは加熱ムラを確実に防ぐマイクロ波照射処理装置を提供することを目的とする。   The present invention solves such problems and provides a microwave irradiation processing apparatus that enables microwave irradiation not only from the upper and lower surfaces of the processed object but also from the side surface to reliably prevent unevenness in drying or heating of the processed object. The purpose is to do.

本発明は上述の課題を解決するために、処理槽内に処理物を搬入して上下面のいずれか一方或いは両方から導波管を介してマイクロ波発生器で発生させたマイクロ波を導入及び照射して乾燥または温度を上げるマイクロ波照射処理装置であって、処理物を前面から後面に搬送して処理するコンベア式の処理槽を備え、この処理槽にマイクロ波を上下面いずれか一方或いは両方から照射可能な第1照射手段と、この第1照射手段に加えて処理物の左右どちらか一方或いは両方の側面からも照射可能な第2照射手段とを備える。   In order to solve the above-mentioned problem, the present invention introduces a microwave generated by a microwave generator through a waveguide from one or both of upper and lower surfaces by carrying a processed material into a processing tank. A microwave irradiation processing apparatus that irradiates and raises the temperature or temperature, and includes a conveyor-type processing tank that conveys a processed material from the front surface to the rear surface for processing, and the microwave is applied to the processing tank either on the upper or lower surface or In addition to the first irradiation means, a first irradiation means capable of irradiation from both sides and a second irradiation means capable of irradiation from the left or right side or both sides of the processed object are provided.

また、本発明の他の実施形態として、処理槽内に処理物を搬入して上下面のいずれか一方或いは両方から導波管を介してマイクロ波発生器で発生させたマイクロ波を導入及び照射して乾燥または温度を上げるマイクロ波照射処理装置であって、処理物を密閉された中空内に前面から出し入れして処理するバッチ式の処理槽を備え、この処理槽にマイクロ波を上下面いずれか一方或いは両方から照射可能な第1照射手段を有し、この第1照射手段に加えて処理物の左右どちらか一方或いは両方の側面から照射可能な第2照射手段と、処理物を出し入れする前面と対向する後面から照射可能な第3照射手段とのいずれか一方または両方を備える。   Further, as another embodiment of the present invention, a processed object is introduced into a processing tank, and microwaves generated by a microwave generator from one or both of upper and lower surfaces through a waveguide are introduced and irradiated. A microwave irradiation processing apparatus for drying or raising the temperature, which is equipped with a batch-type processing tank for processing the processed material in and out of a sealed hollow from the front surface, and microwaves are applied to the processing tank on either the upper or lower surface. A first irradiating means capable of irradiating from one or both of them; in addition to the first irradiating means, a second irradiating means capable of irradiating from the left or right side or both sides of the processed object; Any one or both of the 3rd irradiation means which can irradiate from the back surface opposite to the front is provided.

ここで、第1照射手段、第2照射手段、及び第3照射手段は、処理槽に導波管を介して各々接続されてこの各方向にそれぞれ、マイクロ波を発生させるマイクロ波発生器と、導波管から反射する電力を吸収してマイクロ波発振器を保護するアイソレータと、処理槽のインピーダンス整合をとりマイクロ波電力を有効利用する整合器とを各々備えることが好ましい。このマイクロ波発生器には、処理槽に導波管を介して各方向からそれぞれ同時または別々にマイクロ波を照射可能に制御する制御手段を接続することが好ましい。また、制御手段は、処理槽にマイクロ波照射中の処理物の温度を測定するサーモパイル式またはサーミスタ式の赤外温度計を少なくとも1つ以上設置して接続するとともに、この温度計の温度データに応じてマイクロ波発生器の出力を制御して処理物の温度状態を監視可能にすることが好ましい。また、導波管は、処理槽に各方向からマイクロ波を導入する際にテーパを有して徐々に広がるホーン型に形成した照射口を設け、この照射口が処理槽の外部から内部に至る間で広がるように延在させることが好ましい。また、導波管は、ホーン型の照射口を処理槽内の処理物近傍まで近接するように延在させたことが好ましい。また、導波管は、ホーン型に広がって延長するテーパ長がマイクロ波の波長の長さに設けることが好ましい。   Here, the first irradiating means, the second irradiating means, and the third irradiating means are each connected to the processing tank via a waveguide and generate a microwave in each direction, respectively, It is preferable to provide an isolator that protects the microwave oscillator by absorbing power reflected from the waveguide, and a matching unit that performs impedance matching of the processing tank and effectively uses the microwave power. The microwave generator is preferably connected with a control means for controlling the microwave so that microwaves can be irradiated simultaneously or separately from each direction via a waveguide. In addition, the control means installs and connects at least one thermopile type or thermistor type infrared thermometer for measuring the temperature of the processed object during the microwave irradiation to the treatment tank, and the temperature data of the thermometer Accordingly, it is preferable to control the output of the microwave generator so that the temperature state of the workpiece can be monitored. Further, the waveguide is provided with an irradiation port formed in a horn shape having a taper when the microwave is introduced into the processing tank from each direction, and the irradiation port extends from the outside to the inside of the processing tank. It is preferable to extend so as to spread. Moreover, it is preferable that the waveguide is extended so that the horn-shaped irradiation port is close to the vicinity of the processing object in the processing tank. Further, the waveguide preferably has a taper length extending in a horn shape and extending to the length of the wavelength of the microwave.

以上詳細に説明したように、本発明によるマイクロ波照射処理装置によれば、マイクロ波の照射を処理物の上下面のみならず側面からも照射可能にしているため、処理物全体における温度上昇及び処理物全体の温度分布にムラが無くなり、処理後の処理物における乾燥ムラまたは加熱ムラを確実に防いで均一に処理することが可能になる。   As described above in detail, according to the microwave irradiation processing apparatus of the present invention, since the microwave irradiation can be performed not only from the upper and lower surfaces of the processing object, but also from the side surface, There is no unevenness in the temperature distribution of the entire processed product, and it is possible to uniformly prevent drying unevenness or heating unevenness in the processed product after processing.

次に、添付図面を参照して本発明によるマイクロ波照射処理装置の実施の形態を詳細に説明する。図1は、本発明によるマイクロ波照射処理装置の第1実施形態を示す構成図である。また、図2は、図1に示した第1実施形態と従来技術とによる加熱状態の対比を示す図であり、図2(a)は従来技術の加熱状態を、図2(b)は本発明の加熱状態を各々示している。また、図3は、図1に示した導波管16の他の実施例を示す図である。また、図4は、図3に示した矢印A方向から見た内部構造を示す図である。また、図5は、図4に示した照射口16aの他の実施例を示す図であり、図5(a)は処理槽10の内部に設けた照射口16aを、図5(b)は処理槽10の外部に照射口16aを各々示している。また、図6は、図3に示したホーン型の照射口16aの有無による加熱状態の対比を示す図であり、図6(a)は照射口無しの導波管による加熱状態を、図6(b)は照射口有りの導波管による加熱状態を各々示している。また、図7は、本発明によるマイクロ波照射処理装置の第2実施形態を示す構成図である。また、図8は、本発明によるマイクロ波照射処理装置の第3実施形態を示す構成図である。また、図9は、本発明によるマイクロ波照射処理装置の第4実施形態を示す構成図である。   Next, an embodiment of a microwave irradiation processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a configuration diagram showing a first embodiment of a microwave irradiation processing apparatus according to the present invention. FIG. 2 is a diagram showing a comparison of the heating state between the first embodiment shown in FIG. 1 and the prior art. FIG. 2 (a) shows the heating state of the prior art, and FIG. 2 (b) shows the present state. Each of the heating states of the invention is shown. FIG. 3 is a diagram showing another embodiment of the waveguide 16 shown in FIG. FIG. 4 is a diagram showing an internal structure viewed from the direction of arrow A shown in FIG. FIG. 5 is a view showing another embodiment of the irradiation port 16a shown in FIG. 4. FIG. 5 (a) shows the irradiation port 16a provided inside the processing tank 10, and FIG. Irradiation ports 16a are shown outside the processing tank 10, respectively. 6 is a diagram showing a comparison of the heating state with and without the horn-shaped irradiation port 16a shown in FIG. 3, and FIG. 6 (a) shows the heating state with the waveguide without the irradiation port. (B) each shows the heating state by the waveguide with an irradiation port. Moreover, FIG. 7 is a block diagram which shows 2nd Embodiment of the microwave irradiation processing apparatus by this invention. Moreover, FIG. 8 is a block diagram which shows 3rd Embodiment of the microwave irradiation processing apparatus by this invention. Moreover, FIG. 9 is a block diagram which shows 4th Embodiment of the microwave irradiation processing apparatus by this invention.

図1に示すように、本発明によるマイクロ波照射処理装置の第1実施形態は、図10に示した従来技術と同様に、民生用の調理以外で工業用分野に採用されて化学反応の促進、加熱、乾燥、殺菌などの熱処理に用いられており、例えば、電子部品、鋳物、セラミック、食品、化学合成物などの処理物1を、コンベア11により前面から後面に開口して搬送処理することが可能なコンベア式の処理槽10を備え、この処理槽10内に処理物1をコンベア11で搬入して上下面のいずれか一方或いは両方(図1では両方)から導波管16を介してマイクロ波発生器(図2参照)を備えた第1照射手段12によりマイクロ波を発生させて導入及び照射することで乾燥または温度を上げるように設けている。また、この第1実施形態は、図10に示した従来技術とは異なり、処理槽10にマイクロ波を上下面の両方から照射する第1照射手段12に加えて処理物1の左右どちらか一方或いは両方(図1では両方)の側面からも照射可能な第2照射手段13を備えている。即ち、第1実施形態では、処理槽10内の処理物1に上下面からマイクロ波を照射する第1照射手段12のみならず、左右両側面からもマイクロ波を照射できる第2照射手段13を設けることで、処理物1を全体的に均一に加熱または乾燥でき、処理後の処理物1における乾燥ムラまたは加熱ムラを確実に防いで処理可能にしたものである。   As shown in FIG. 1, the first embodiment of the microwave irradiation processing apparatus according to the present invention is adopted in the industrial field except for cooking for consumer use, as in the prior art shown in FIG. 10, to promote chemical reaction. It is used for heat treatment such as heating, drying, sterilization, etc., for example, processing objects 1 such as electronic parts, castings, ceramics, foods, chemical compounds, etc. are conveyed from the front surface to the rear surface by the conveyor 11. The conveyor-type processing tank 10 is provided, and the processed product 1 is carried into the processing tank 10 by the conveyor 11 and is passed through the waveguide 16 from one or both of the upper and lower surfaces (both in FIG. 1). The first irradiation means 12 having a microwave generator (see FIG. 2) generates microwaves and introduces and irradiates them to increase the drying or temperature. Further, in the first embodiment, unlike the prior art shown in FIG. 10, in addition to the first irradiation means 12 that irradiates the processing tank 10 with microwaves from both the upper and lower surfaces, either the left or right of the processed object 1 is processed. Or the 2nd irradiation means 13 which can also irradiate from both sides (both in FIG. 1) is provided. That is, in 1st Embodiment, the 2nd irradiation means 13 which can irradiate the microwave from not only the 1st irradiation means 12 which irradiates the processed material 1 in the processing tank 10 from the upper and lower surfaces from both upper and lower surfaces is provided. By providing, the processed object 1 can be heated or dried uniformly uniformly, and the processing object 1 after the process can be reliably treated by preventing drying unevenness or heating unevenness.

ここで、処理槽10は、処理物1を搬送する前後方向に開口(貫通)して上下左右を囲む周壁を備え、この周壁の上下左右各面に第1照射手段12及び第2照射手段13を各々設置するとともに、開口した前後方向に所定の間隔で複数のローラを配列させて回転可能に支持したコンベア11を配置している。この際、処理槽10では、第1照射手段12による下方向からの照射において、コンベア11が処理物1の底面を遮断しないように複数設けたローラ間の隙間を介してマイクロ波を照射できるように設けている。また、この処理槽10内では、上下左右の4面に第1照射手段12及び第2照射手段13を各々設置する実施例を説明したが、これに限定されるものではなく、上下いずれか1面、或いは左右いずれか1面のみの照射に適宜削減することも可能である。例えば、下面からの第1照射手段12を削減した場合、搬送する処理物1の底面を遮断してもよくなり、図1に示したローラ式では無くベルト式のコンベア(図示せず)を採用することも可能になる。   Here, the processing tank 10 is provided with a peripheral wall that opens (penetrates) in the front-rear direction for conveying the processed material 1 and surrounds the upper, lower, left, and right sides. And a conveyor 11 which is rotatably supported by arranging a plurality of rollers at predetermined intervals in the opened front-rear direction. At this time, in the processing tank 10, microwave irradiation can be performed through a gap between a plurality of rollers provided so that the conveyor 11 does not block the bottom surface of the processed material 1 in the downward irradiation by the first irradiation means 12. Provided. Moreover, in this processing tank 10, although the Example which each installs the 1st irradiation means 12 and the 2nd irradiation means 13 on four surfaces of upper and lower, right and left was demonstrated, it is not limited to this, either upper and lower It is also possible to appropriately reduce the irradiation to only one of the surface and the left and right surfaces. For example, when the first irradiation means 12 from the lower surface is reduced, the bottom surface of the workpiece 1 to be conveyed may be blocked, and a belt type conveyor (not shown) is adopted instead of the roller type shown in FIG. It is also possible to do.

また、第1照射手段12及び第2照射手段13は、図1に示したように、処理槽10の外周面に垂直な導波管16を介して上下左右方向から各々接続してこの各方向にそれぞれ、マイクロ波を発生させるマイクロ波発生器12a、13aを備えるとともに、図11に示した従来技術とは異なり導波管16から反射する電力を吸収してマイクロ波発振器12a、13aを保護するアイソレータ12b、13bと、処理槽10のインピーダンス整合をとりマイクロ波電力を有効利用する整合器12c、13cとを各々備えている。より詳しく説明すると、本実施の形態では、民生用のような水分を含む処理物(食品)にマイクロ波を照射する調理ではなく、電子部品、鋳物、セラミックなどの水分を含まない処理物1にマイクロ波を照射するため、この水分を含まない処理物1はマイクロ波吸収率が低く反射して導波管16を介してマイクロ波発振器12a、13aまで達して破壊してしまう恐れがある。そこで、本実施の形態では、図10に示した従来技術とは異なり、第1照射手段12及び第2照射手段13に、導波管16から反射する電力を吸収してマイクロ波発振器12a、13aを保護するアイソレータ12b、13bを備えている。   Further, as shown in FIG. 1, the first irradiating means 12 and the second irradiating means 13 are connected to each other from the upper, lower, left and right directions via a waveguide 16 perpendicular to the outer peripheral surface of the processing tank 10, respectively. The microwave generators 12a and 13a for generating microwaves are respectively provided, and unlike the prior art shown in FIG. 11, the power reflected from the waveguide 16 is absorbed to protect the microwave oscillators 12a and 13a. Isolators 12b and 13b, and matching units 12c and 13c that perform impedance matching of processing tank 10 and effectively use microwave power are provided. More specifically, in the present embodiment, the processed product 1 that does not contain moisture such as electronic parts, castings, ceramics, etc., rather than cooking that irradiates microwaves to the processed product (food) that contains moisture as in consumer use. In order to irradiate the microwave, the processed object 1 that does not contain moisture has a low microwave absorptance and may be reflected through the waveguide 16 to reach the microwave oscillators 12a and 13a to be destroyed. Therefore, in the present embodiment, unlike the prior art shown in FIG. 10, the first and second irradiating means 12 and 13 absorb power reflected from the waveguide 16 to thereby generate microwave oscillators 12a and 13a. Isolators 12b and 13b are provided.

そして、この第1照射手段12及び第2照射手段13のマイクロ波発振器12a、13aには、導波管16を介して各方向から処理槽10にそれぞれ同時または別々にマイクロ波を照射可能に制御する制御手段19を接続している。この制御手段19には、処理槽10内でマイクロ波照射中の処理物1から放射される赤外線を検出して温度を測定するサーモパイル式またはサーミスタ式の赤外温度計18を少なくとも1つ以上(図2では2つ)設けて接続しており、この温度計18により測定した温度データ(信号)に応じてマイクロ波発生器12a、13aの出力を制御して処理物1の温度状態を監視できるように設けている。ここで、例えば、温度計18としてサーミスタ式赤外温度計を使う理由は、薄膜サーミスタのために検知した赤外線を電圧として出力できる(電圧から温度に換算し易い)ことや小型化が可能であり、受光部の面積をマイクロ波の波長よりも小型にすることで、マイクロ波の影響(電磁波ノイズ)を受け難くすることが可能だからである。また、処理槽10に温度計18を複数設置する理由としては、1つに比べて複数設置することで処理物1の温度をより正確に測定するためである。そして、この制御手段19には、処理槽10の温度計18に接続して処理物1の温度を計測した温度データ(アナログ信号)を受信及び処理する処理部19aと、このアナログ信号に基づいてマイクロ波発振器12a、13aのマイクロ波出力を調節して処理物1が所定の設定温度になるように制御する制御部19bとを各々備えて信号処理している。従って、第1の実施形態では、サーモパイル式またはサーミスタ式の赤外線温度計18を複数設置して処理物1の温度を正確に計測し、この温度データに基づいて制御手段19によりマイクロ波発振器12a、13aの出力を制御して処理物1の温度調整を可能にするため、処理物1の乾燥及び加熱ムラを確実に防ぐことができる。   The microwave oscillators 12 a and 13 a of the first irradiation unit 12 and the second irradiation unit 13 are controlled to be able to irradiate the processing tank 10 with microwaves simultaneously or separately from each direction via the waveguide 16. Control means 19 is connected. The control means 19 includes at least one or more thermopile type or thermistor type infrared thermometers 18 that detect the infrared rays emitted from the processing object 1 during microwave irradiation and measure the temperature in the treatment tank 10 ( In FIG. 2, two are provided and connected, and the temperature of the workpiece 1 can be monitored by controlling the outputs of the microwave generators 12 a and 13 a according to the temperature data (signal) measured by the thermometer 18. It is provided as follows. Here, for example, the reason why a thermistor type infrared thermometer is used as the thermometer 18 is that the infrared rays detected for the thin film thermistor can be output as a voltage (easily converted from voltage to temperature) and downsizing is possible. This is because by making the area of the light receiving portion smaller than the wavelength of the microwave, it is possible to make it less susceptible to the influence of the microwave (electromagnetic wave noise). Moreover, the reason for installing a plurality of thermometers 18 in the treatment tank 10 is to more accurately measure the temperature of the processed material 1 by installing a plurality of thermometers than one. The control means 19 is connected to the thermometer 18 of the processing tank 10 to receive and process the temperature data (analog signal) obtained by measuring the temperature of the processed object 1, and based on the analog signal. Each of the control units 19b controls the microwave outputs of the microwave oscillators 12a and 13a to control the processed product 1 to a predetermined set temperature, and performs signal processing. Therefore, in the first embodiment, a plurality of thermopile type or thermistor type infrared thermometers 18 are installed to accurately measure the temperature of the workpiece 1, and based on this temperature data, the control means 19 uses the microwave oscillator 12 a, Since the output of 13a is controlled to enable temperature adjustment of the processed object 1, drying and heating unevenness of the processed object 1 can be surely prevented.

このように形成された本発明によるマイクロ波照射処理装置の第1実施形態を用いて乾燥または加熱する場合、図1に示したように、コンベア11により自動的に複数の処理物1を処理槽10内に順次搬送することで、上下左右の4方向からマイクロ波を照射して乾燥または加熱などの熱処理を実行する。この際、処理槽10では、図1に示した温度計18が予め動作するように制御手段19を駆動させるとともに、この制御手段19の制御部19bにより第1照射手段12及び第2照射手段13のマイクロ波発振器12a、13aを制御して各方向から同時または個別のどちらかで照射するかを設定する。その後、処理物1がコンベア11により処理槽10内に搬送されると、温度計18により処理物1の温度を自動的に監視するとともに、この監視した温度に応じてマイクロ波発振器12a、13aが駆動して処理物1の上下部のみではなく側面からも同時または個別にマイクロ波を照射する。この照射中には、温度計18により常に処理物1の温度を監視しているため、例えば、処理物1の温度が低下した場合、制御手段19の処理部19aが温度データを受信して制御部19bに送信することで、この制御部19bがマイクロ波発振器12a、13aの照射量を調整して所望の温度に調整する。これにより処理槽10内では、マイクロ波の照射方向を処理物1の上部と下部のみではなく側面からも同時または個別に照射することが可能になるため、図10に示した従来技術に比べて処理後の処理物1の乾燥ムラ、加熱ムラを確実に防ぐことができる。   When drying or heating using the first embodiment of the microwave irradiation processing apparatus according to the present invention formed as described above, a plurality of processed objects 1 are automatically processed by a conveyor 11 as shown in FIG. By sequentially transporting the film 10 into the inside, heat treatment such as drying or heating is performed by irradiating microwaves from four directions, top, bottom, left and right. At this time, in the processing tank 10, the control unit 19 is driven so that the thermometer 18 shown in FIG. 1 operates in advance, and the first irradiation unit 12 and the second irradiation unit 13 are controlled by the control unit 19 b of the control unit 19. The microwave oscillators 12a and 13a are controlled to set whether to irradiate simultaneously or individually from each direction. Thereafter, when the processed product 1 is conveyed into the processing tank 10 by the conveyor 11, the temperature of the processed product 1 is automatically monitored by the thermometer 18, and the microwave oscillators 12a and 13a are set in accordance with the monitored temperature. It drives and irradiates a microwave simultaneously or individually not only from the upper and lower parts of the processed material 1 but also from the side surface. During this irradiation, the temperature of the processed object 1 is constantly monitored by the thermometer 18, so that, for example, when the temperature of the processed object 1 decreases, the processing unit 19 a of the control means 19 receives the temperature data and controls it. By transmitting to the unit 19b, the control unit 19b adjusts the irradiation amount of the microwave oscillators 12a and 13a to adjust to a desired temperature. As a result, in the treatment tank 10, it becomes possible to irradiate the irradiation direction of the microwaves not only from the upper part and the lower part of the processing object 1 but also from the side surface simultaneously or individually, so that compared with the prior art shown in FIG. Unevenness of drying and unevenness of heating of the processed product 1 after the treatment can be surely prevented.

ここで、本実施の形態と従来技術との加熱または乾燥効果における差異を、より詳しく説明するため、図2を参照して具体的に対比する。本出願人は、上述した実施の形態に基づき、その効果を電磁界強度解析ソフト:HFSS(米国:ANSOFT社)を用いて確認した。図2(a)には上面の第1照射手段12のみにより照射した従来技術を、図3(b)には上面の第1照射手段12及び左右側面の第2照射手段13から同時に照射した本実施の形態を各々示している。尚、図3(a)に示した解析モデルには、左右両側面の第2照射手段のマイクロ波導入口が見えるが、この解析では側面の照射口による照射はしていない。上面の第1照射手段12からのみ照射している。また、図3(b)に示した本実施の形態では、前述した第1の実施形態とは異なり、左右両側面の第2照射手段13におけるマイクロ波導入口は互いに干渉を裂ける為に90°向きを変えている。また、解析条件として、図3(a)及び図3(b)に示した処理槽10の大きさをW700×H880×L1000mmとし、処理物1の大きさをφ300×H380mmとするとともに、誘電率を15tanδ0.001とすることで解析した。   Here, in order to explain in more detail the difference in the heating or drying effect between the present embodiment and the prior art, a specific comparison will be made with reference to FIG. The present applicant confirmed the effect using electromagnetic field strength analysis software: HFSS (USA: ANSOFT Corporation) based on the above-described embodiment. FIG. 2A shows the prior art irradiated only by the first irradiation means 12 on the upper surface, and FIG. 3B shows the book irradiated simultaneously from the first irradiation means 12 on the upper surface and the second irradiation means 13 on the left and right side surfaces. Each embodiment is shown. In the analysis model shown in FIG. 3A, the microwave inlets of the second irradiation means on both the left and right sides can be seen, but in this analysis, the side irradiation holes are not irradiated. Irradiation is performed only from the first irradiation means 12 on the upper surface. Also, in the present embodiment shown in FIG. 3B, unlike the first embodiment described above, the microwave inlets in the second irradiation means 13 on both the left and right side faces 90 ° in order to break interference with each other. Is changing. Further, as analysis conditions, the size of the treatment tank 10 shown in FIGS. 3A and 3B is W700 × H880 × L1000 mm, the size of the treatment object 1 is φ300 × H380 mm, and the dielectric constant Was set to 15 tan δ 0.001.

このような条件下による解析結果としては、まず、図3(a)に示した従来技術(上面照射のみ)において、図示した表示では判別し難いが(原図はカラー)、電磁界の強度が低い(温度が低い)ほど青く分布が表示され、高い(温度が高い)ほど赤く表示されており、この上面のみの照射による従来技術では電磁界強度が低く、且つ、処理物1の下部では電磁界分布が良くないことが判別できた。
一方、図3(b)に示した本実施の形態(上面及び両側面照射)における解析結果では、上面及び左右両側面からの照射により電磁界強度と処理物1の温度とが全体的に均一で高く、且つ、処理物1の下部でも電磁界分布が良いことが判別できた。
As an analysis result under such conditions, first, in the conventional technique shown in FIG. 3A (upper surface irradiation only), it is difficult to discriminate with the illustrated display (the original figure is color), but the intensity of the electromagnetic field is low. The distribution is displayed in blue as the temperature is low, and the color is displayed in red as the temperature is high. The electromagnetic field intensity is low in the prior art by irradiating only the upper surface, and the electromagnetic field is below the workpiece 1. The distribution was not good.
On the other hand, in the analysis result in the present embodiment (upper surface and both side surface irradiation) shown in FIG. 3B, the electromagnetic field strength and the temperature of the processed object 1 are generally uniform by the irradiation from the upper surface and the left and right side surfaces. It can be determined that the electromagnetic field distribution is good even in the lower part of the processed object 1.

以上のように、通常マイクロ波照射処理装置は、従来技術のように処理物1の上面のみにマイクロ波を照射する方式では処理物1を誘電加熱するには不十分であり、本実施の形態のように処理物1の側面から照射することが最も有効になることが分かる。尚、この従来技術において、処理物1の上面に加えて下面からもマイクロ波を照射する方式も検討したが、解析の結果、処理物1の側面部で加熱が不十分になることが分かった。
従って、一搬的に電磁界強度の高い部分にマイクロ波のエネルギ−が集中して処理物1の誘電加熱が起こるため、本実施形態のように上下面に加えて左右側面の四方向から照射して処理物1全体における電磁界分布を一様にするほど、均一な加熱がなされ、ムラの無い乾燥または加熱が可能になるということが確認できた。
As described above, in the conventional microwave irradiation processing apparatus, the method of irradiating the microwave only to the upper surface of the processed object 1 as in the prior art is insufficient for dielectric heating of the processed object 1, and this embodiment Thus, it can be seen that irradiation from the side surface of the processed object 1 is most effective. In this prior art, a method of irradiating microwaves from the lower surface in addition to the upper surface of the processed object 1 was also examined. As a result of the analysis, it was found that heating was insufficient at the side surface of the processed object 1. .
Therefore, microwave energy is concentrated on a portion where the electromagnetic field strength is high and dielectric treatment of the workpiece 1 occurs, so that irradiation is performed from four directions on the left and right sides in addition to the upper and lower sides as in this embodiment. Thus, it was confirmed that the more uniform the electromagnetic field distribution in the entire processed object 1 is, the more uniform the heating is performed, and the drying or heating without unevenness becomes possible.

ところで、図1に示したマイクロ波照射処理装置の第1実施形態において、導波管16をホーン型に形成することで処理物1全体に照射するマイクロ波の電磁場をより均一に供給することが可能になる。このようにホーン型に形成した導波管の他の実施例は、図3に示すように、処理槽10に第1照射手段12による上下方向と第2照射手段13による左右方向との四方向からコンベア11により搬送した処理物1に向かってマイクロ波を導入する際、テーパを有して徐々に広がるホーン型に形成した照射口16aを各々設け、この照射口16aを処理槽10の外部から内部に至るまでの間で広がるように延在させて設けている。このホーン型の導波管16は、図4に示すように、照射口16aが処理槽10の外側でホーン型に広がり始めて上下左右の周壁を貫通し、さらに処理槽10内でホーン型の照射口16aが、コンベア11により搬送する処理物1の近傍まで近接して周囲を囲むように延在している。   By the way, in the first embodiment of the microwave irradiation processing apparatus shown in FIG. 1, the microwave electromagnetic field irradiated to the entire workpiece 1 can be supplied more uniformly by forming the waveguide 16 in a horn shape. It becomes possible. As shown in FIG. 3, another embodiment of the waveguide thus formed in a horn shape has four directions including a vertical direction by the first irradiation means 12 and a horizontal direction by the second irradiation means 13 in the treatment tank 10. When the microwave is introduced from the conveyor 11 toward the processed material 1 conveyed by the conveyor 11, each of the irradiation ports 16a formed in a horn shape having a taper and gradually expanding is provided, and the irradiation port 16a is provided from the outside of the processing tank 10. It extends so that it extends to the inside. As shown in FIG. 4, the horn-type waveguide 16 has an irradiation port 16 a that starts to spread in a horn shape outside the processing tank 10 and penetrates the upper, lower, left, and right peripheral walls, and further horn-type irradiation in the processing tank 10. The mouth 16a extends so as to be close to the vicinity of the processed material 1 conveyed by the conveyor 11 and surround the periphery.

この際、導波管16は、照射口16aのホーン型に広がって延在する図4に示したテーパ長Bをマイクロ波の波長の長さに設けている。この波長の長さは、例えば、マイクロ波の周波数が2450Mhzであれば、図4に示したテーパ長Bを122mmとすることで、処理物1全体に照射するマイクロ波の電磁場を均一に供給でき、処理物1の均一な乾燥及び加熱が可能となり、ひいては乾燥ムラ、加熱ムラを防ぐことが可能となる。また、導波管16は、図4に示したようにホーン型の照射口16aを処理槽10の外部から広がり周壁を貫通して内部まで延在させることに限定するものではなく、例えば、図5(a)に示すように、処理槽10の内部にホーン型に広がる照射口16aを内在することも可能である。このように処理槽10内に内在した照射口16aによると、処理物1の周囲に近づけてより近接させることが可能になるため、処理物1に照射したマイクロ波の電磁場が全体的に供給され、均一な乾燥及び加熱が可能となる。一方、これとは異なり、処理槽10の外側にホーン型の照射口16aを設けることも可能である。この処理槽10の外側に設けた照射口16aは、図5(b)に示すように、処理槽10の外側上下左右の周壁にホーン型に広がる端部を直接接続させて設けている。従って、このような照射口16aによると、処理槽10の外側に延在させて内在しないため、処理槽10全体の構造が簡単になり処理槽10内部の小型化を容易にでき装置全体の製造コストも低減できる。   At this time, the waveguide 16 is provided with a taper length B shown in FIG. 4 extending in a horn shape of the irradiation port 16a at the wavelength of the microwave. For example, if the microwave frequency is 2450 Mhz, the length of the wavelength can be uniformly supplied by setting the taper length B shown in FIG. In addition, it becomes possible to uniformly dry and heat the processed product 1, and thus it is possible to prevent drying unevenness and heating unevenness. Further, the waveguide 16 is not limited to the horn-shaped irradiation port 16a extending from the outside of the processing tank 10 and extending through the peripheral wall to the inside as shown in FIG. As shown to 5 (a), it is also possible to have the irradiation port 16a which spreads in a horn shape inside the processing tank 10. FIG. As described above, according to the irradiation port 16a inherent in the processing tank 10, it becomes possible to bring the processing object 1 closer to and closer to the periphery of the processing object 1, so that the electromagnetic field of the microwave irradiated to the processing object 1 is supplied as a whole. , Uniform drying and heating are possible. On the other hand, it is also possible to provide a horn-shaped irradiation port 16 a outside the processing tank 10. As shown in FIG. 5B, the irradiation port 16a provided on the outer side of the processing tank 10 is provided by directly connecting end portions extending in a horn shape to the upper, lower, left and right peripheral walls of the processing tank 10. Therefore, according to such an irradiation port 16a, since it extends outside the processing tank 10 and does not exist, the entire structure of the processing tank 10 is simplified, the size inside the processing tank 10 can be easily reduced, and the entire apparatus can be manufactured. Cost can also be reduced.

ここで、導波管16にホーン型の照射口16aを設ける有無によって生ずる加熱効果における差異をより詳しく説明するため、図6を参照して具体的に対比する。尚、図6に示した解析結果は、前述した電磁界強度解析ソフトにより解析しており、図6(a)にマイクロ波を処理槽10の側壁面に対して垂直方向からストレートに導く導波管を用いた場合を、図6(b)に処理槽10内でホ−ン型に広がる導波管を用いた場合を各々示し、それぞれ電磁界の強度分布を解析表示したものである。この際、解析条件として、マイクロ波の周波数が2450KHzであるのに対し、図6(b)に示したホ−ン型導波管のテ−パ長(図4に示したテーパ長B)を、波長の長さに対応させて122mmとしている。   Here, in order to explain in more detail the difference in heating effect caused by the presence or absence of the horn-shaped irradiation port 16a in the waveguide 16, a specific comparison will be made with reference to FIG. The analysis result shown in FIG. 6 is analyzed by the electromagnetic field strength analysis software described above. FIG. 6A shows a waveguide that guides the microwave straight from the direction perpendicular to the side wall surface of the processing tank 10. FIG. 6B shows a case where a tube is used, and FIG. 6B shows a case where a waveguide that spreads in a horn shape in the processing tank 10 is used, and the intensity distribution of the electromagnetic field is analyzed and displayed. At this time, as the analysis conditions, the microwave frequency is 2450 KHz, whereas the taper length (taper length B shown in FIG. 4) of the horn type waveguide shown in FIG. The length is 122 mm corresponding to the wavelength length.

このような条件下でマイクロ波を照射した場合、まず、図6(a)に示すストレート型の導波管では、マイクロ波を処理槽10の側面から導入して中央付近で、電磁界の強度が徐々に弱くなり領域分布が減少していることが確認できる。これは処理物の加熱または乾燥処理において、前述した電磁界強度の領域分布が減少する部分、即ちマイクロ波を照射した前方側にムラが多く発生してしまうことを示している。
一方、ホ−ン型に広がる導波管の他の実施例では、図6(b)に示すようにホ−ン型の方が、図6(a)に示したストレート型の導波管に比べて、全体的な電磁界強度が高くその領域も処理槽10内にほぼ均一に広く分布していることが確認できる。これは処理物の加熱または乾燥処理において、電磁界強度の領域分布が均一であり、ムラの無い処理が可能であることを示している。
このようにホーン型に形成した導波管の他の実施例によると、図1に示したストレート型の導波管に比べて、処理槽10内でマイクロ波を均一に照射して処理物1をムラなく乾燥または加熱処理することが可能になる。
When microwaves are irradiated under such conditions, first, in the straight type waveguide shown in FIG. 6A, the microwave is introduced from the side surface of the processing tank 10 and the electromagnetic field strength is near the center. It can be confirmed that the region distribution gradually decreases and the region distribution decreases. This indicates that in the heating or drying treatment of the processed material, a large amount of unevenness occurs in the portion where the above-described area distribution of the electromagnetic field intensity decreases, that is, the front side irradiated with the microwave.
On the other hand, in another embodiment of the waveguide extending to the horn type, the horn type is changed to the straight type waveguide shown in FIG. 6A as shown in FIG. In comparison, the overall electromagnetic field strength is high, and it can be confirmed that the region is distributed almost uniformly in the treatment tank 10. This indicates that the region distribution of the electromagnetic field intensity is uniform in the heating or drying treatment of the treatment object, and the treatment without unevenness is possible.
According to another embodiment of the waveguide formed in the horn shape as described above, compared with the straight waveguide shown in FIG. Can be dried or heat-treated without unevenness.

以上、詳細に説明したように、本発明によるマイクロ波照射処理装置の第1実施形態によると、マイクロ波の照射を処理物1の上下面のみならず側面からも照射可能にしているため、処理物1全体における温度上昇及び処理物全体の温度分布にムラが無くなり、処理後の処理物1における乾燥ムラまたは加熱ムラを確実に防いで均一に処理することが可能となる。また、本実施の形態によると、図1に示したように、第1照射手段12及び第2照射手段13のマイクロ波発振器12a、13aが温度計18を有した制御手段19により制御されて処理物1の温度調整を行うため、処理物1の乾燥または加熱ムラを確実に防ぐことができる。また、本実施の形態によると、図3に示したように、導波管16にテーパ(ホーン)型の照射口16aを設けているため、処理槽10内でマイクロ波を均一に照射して処理物1をムラなく乾燥または加熱処理することが可能となる。   As described above in detail, according to the first embodiment of the microwave irradiation processing apparatus of the present invention, the microwave irradiation can be performed not only from the upper and lower surfaces of the processing object 1 but also from the side surfaces. The temperature rise of the entire product 1 and the temperature distribution of the entire processed product are free from unevenness, and it is possible to reliably prevent drying unevenness or heating unevenness in the processed product 1 after processing and to perform uniform processing. Further, according to the present embodiment, as shown in FIG. 1, the microwave oscillators 12a and 13a of the first irradiation means 12 and the second irradiation means 13 are controlled by the control means 19 having the thermometer 18 to perform processing. Since the temperature of the product 1 is adjusted, drying or heating unevenness of the processed product 1 can be reliably prevented. Further, according to the present embodiment, as shown in FIG. 3, since the waveguide 16 is provided with the taper (horn) type irradiation port 16a, the microwave is uniformly irradiated in the processing tank 10. It becomes possible to dry or heat-process the processed material 1 without unevenness.

ところで、本実施の形態は、図1に示した処理槽10の前面から後面にコンベア11を介在するコンベア式のマイクロ波照射処理装置に限定されるものではなく、例えば、処理物1を密閉された中空内に前面から出し入れして処理するバッチ式のマイクロ波照射処理装置に設けることも可能である。このバッチ式のマイクロ波照射処理装置では、図7乃至9に示したように、箱状で中空に形成して前面を開口したバッチ式の処理槽20を設け、この処理槽20の上下からマイクロ波を照射する第1照射手段12を備え、この第1照射手段12に加えて左右に第2照射手段13を設けた第2の実施形態(図7参照)、または第1照射手段12に加えて後部の第3照射手段14を設けた第3の実施形態(図8参照)、或いは第1照射手段12に加えて左右後部全ての壁面に第2照射手段13及び第3照射手段14を設けた第4の実施形態(図10参照)など種々の照射方法を選択できる。即ち、処理槽の前後方向を開口(貫通)したコンベア式の第1実施形態(図1参照)では側面のみに照射手段を設ける構造であるのに対し、バッチ式では処理槽20の左右と後の各壁面に照射手段を設けることができ、その組み合わせにより種々の照射方法が選択できる。尚、図7乃至9に示した第1照射手段12及び第2照射手段14は、図1に示した第1の実施形態と同様の構成要素であり、同じ構成要素には同一の符号を記載するとともに、重複する説明は省略する。   By the way, this Embodiment is not limited to the conveyor type microwave irradiation processing apparatus which interposes the conveyor 11 from the front surface to the rear surface of the processing tank 10 shown in FIG. 1, for example, the processed material 1 is sealed. It is also possible to provide in a batch type microwave irradiation processing apparatus that takes in and out from the front side into a hollow. In this batch type microwave irradiation processing apparatus, as shown in FIGS. 7 to 9, a batch type processing tank 20 formed in a box shape and hollow and opened on the front surface is provided. A second embodiment (see FIG. 7) in which a first irradiation means 12 for irradiating a wave is provided and second irradiation means 13 are provided on the left and right in addition to the first irradiation means 12, or in addition to the first irradiation means 12 In the third embodiment (see FIG. 8) in which the rear third irradiation unit 14 is provided, or in addition to the first irradiation unit 12, the second irradiation unit 13 and the third irradiation unit 14 are provided on all right and left rear walls. Various irradiation methods such as the fourth embodiment (see FIG. 10) can be selected. That is, in the conveyor type first embodiment (see FIG. 1) in which the front and rear directions of the treatment tank are opened (penetrated), the irradiation means is provided only on the side surface. Irradiation means can be provided on each of the wall surfaces, and various irradiation methods can be selected depending on the combination. The first irradiating means 12 and the second irradiating means 14 shown in FIGS. 7 to 9 are the same constituent elements as those of the first embodiment shown in FIG. 1, and the same constituent elements are denoted by the same reference numerals. In addition, overlapping explanation is omitted.

まず、本発明によるマイクロ波照射処理装置の第2実施形態は、図7に示すように、バッチ式の処理槽20で上下の第1照射手段12に加えて左右に第2照射手段13を設けた構造であり、処理物1を密閉された中空内に前面から出し入れして処理するバッチ式の処理槽20を備え、この処理槽20にマイクロ波を上下両方から照射可能な第1照射手段12を有し、この第1照射手段12に加えて処理物1の左右両方の側面から照射可能な第2照射手段14を備えている。ここで、処理槽20は、前面が開口しており、この開口した開口面を蓋部材(図示せず)により密閉して処理できるように設けている。また、処理槽20には、第1照射手段12の内部底面からマイクロ波を照射する際、この底面の照射口を処理物1が覆って塞がないように設置する置台22を設けている。ここで、第1照射手段12及び第2照射手段14は、処理槽20の上下または左右のように対向して一対に設ける必要はなく、左右のいずれか一方、または上下のいずれか一方だけ設けることも可能であり、例えば、第1照射手段12の下部を削減した場合、前述した置台22が不要になる。また、第1照射手段12及び第2照射手段14は、図1に示した第1の実施形態と同様に、処理槽20に導波管を介して接続し、マイクロ波発生器、アイソレータ、整合器を内臓して、制御手段により制御されて動作するように設けている。
このような本発明によるマイクロ波照射処理装置の第2の実施形態によると、処理槽20上下の第1照射手段12に加えて左右の第2照射手段14からもマイクロ波を照射できるため、第1の実施形態と同様の効果を得ることができるとともに、加熱または乾燥処理時に処理槽20内を密閉することができるため、マイクロ波が槽外に放出せず、効果的に処理(照射)することが可能になる。
First, in the second embodiment of the microwave irradiation processing apparatus according to the present invention, as shown in FIG. 7, in addition to the upper and lower first irradiation means 12 in the batch type treatment tank 20, the second irradiation means 13 are provided on the left and right. The first irradiating means 12 is provided with a batch type processing tank 20 for processing the processed material 1 in and out of the sealed hollow from the front, and capable of irradiating the microwave from both above and below the processing tank 20. In addition to the first irradiating means 12, a second irradiating means 14 capable of irradiating from both the left and right side surfaces of the workpiece 1 is provided. Here, the front surface of the processing tank 20 is provided so that the opened opening surface can be sealed with a lid member (not shown). In addition, the treatment tank 20 is provided with a pedestal 22 that is installed so that the treatment object 1 covers the irradiation port on the bottom surface when the microwave is irradiated from the inner bottom surface of the first irradiation means 12. Here, the first irradiating means 12 and the second irradiating means 14 do not need to be provided as a pair so as to face each other like the upper and lower sides or the left and right sides of the processing tank 20, and only one of the left and right sides or the upper and lower sides is provided. For example, when the lower part of the first irradiation unit 12 is reduced, the above-described mounting table 22 is not necessary. In addition, the first irradiation means 12 and the second irradiation means 14 are connected to the processing tank 20 via a waveguide, as in the first embodiment shown in FIG. It is provided so as to operate under the control of the control means.
According to the second embodiment of the microwave irradiation processing apparatus of the present invention, since the microwaves can be irradiated from the left and right second irradiation means 14 in addition to the first irradiation means 12 above and below the treatment tank 20, the first The effect similar to that of the first embodiment can be obtained, and the inside of the treatment tank 20 can be sealed at the time of heating or drying treatment, so that the microwave is not emitted outside the tank, and is effectively treated (irradiated). It becomes possible.

次に、本発明によるマイクロ波照射処理装置の第3実施形態は、図8に示すように、バッチ式の処理槽20で上下の第1照射手段12に加えて後面に第3照射手段14を設けた構造であり、処理物1を密閉された中空内に前面から出し入れして処理するバッチ式の処理槽20を備え、この処理槽20にマイクロ波を上下両方から照射可能な第1照射手段12を有し、この第1照射手段12に加えて処理物1を出し入れする前面と対向する後面から照射可能な第3照射手段14を備えている。ここで、処理槽20には、第2の実施形態と同様に、処理物1を設置する置台22を設けている。即ち、第3の実施形態は、第2の実施形態において処理槽20の左右両側からマイクロ波を照射する第2照射手段の代わりに、処理槽20の後部からマイクロ波を照射可能な第3照射手段14を設けたものであり、その他の構成は第2の実施形態と同様に形成している。
従って、本発明によるマイクロ波照射処理装置の第3の実施形態によると、処理槽20上下の第1照射手段12に加えて後面の第3照射手段14からもマイクロ波を照射できるため、第1の実施形態とほぼ同様の効果が得られるとともに、処理槽20の左右両側に第2照射手段を設けていないことで工場内に他の装置と並べて設置する際に少ない設置面積で設置することができる。
Next, in the third embodiment of the microwave irradiation processing apparatus according to the present invention, as shown in FIG. 8, in addition to the upper and lower first irradiation means 12 in the batch type treatment tank 20, the third irradiation means 14 is provided on the rear surface. 1st irradiation means which is the structure provided and is equipped with the batch-type process tank 20 which puts in and out the processed material 1 from the front in the sealed hollow, and can irradiate this process tank 20 from both the upper and lower sides In addition to the first irradiating means 12, a third irradiating means 14 capable of irradiating from the rear surface opposite to the front surface for loading and unloading the workpiece 1 is provided. Here, the treatment tank 20 is provided with a table 22 on which the treatment object 1 is placed, as in the second embodiment. That is, in the third embodiment, in place of the second irradiation unit that irradiates the microwaves from both the left and right sides of the processing tank 20 in the second embodiment, the third irradiation that can irradiate the microwaves from the rear part of the processing tank 20 is performed. Means 14 are provided, and other configurations are formed in the same manner as in the second embodiment.
Therefore, according to the third embodiment of the microwave irradiation processing apparatus of the present invention, the microwave can be irradiated from the third irradiation means 14 on the rear surface in addition to the first irradiation means 12 above and below the processing tank 20. The effect similar to that of the embodiment can be obtained, and the second irradiation means is not provided on both the left and right sides of the processing tank 20, so that it can be installed with a small installation area when installed side by side with other devices in the factory. it can.

さらに、本発明によるマイクロ波照射処理装置の第4実施形態は、図9に示すように、バッチ式の処理槽20で上下の第1照射手段12に加えて左右後面の壁面全てに第2照射手段13及び第3照射手段14を設けた構造であり、処理物1を密閉された中空内に前面から出し入れして処理するバッチ式の処理槽20を備え、この処理槽20にマイクロ波を上下両方から照射可能な第1照射手段12を有し、この第1照射手段12に加えて処理物1の左右両側面から照射可能な第2照射手段13と、処理物1を出し入れする前面と対向する後面から照射可能な第3照射手段14との両方を備えている。即ち、第4実施形態は、処理槽20上下の第1照射手段12に加え、第2実施形態での第2照射手段13と、第3実施形態での第3照射手段14との両方を全て取り付けた構造であって、処理物1を出し入れする前面以外の全ての壁面からマイクロ波を照射可能にしており、その他の構成は第2及び第3の実施形態と同様に形成している。
従って、本発明によるマイクロ波照射処理装置の第4の実施形態によると、処理槽20上下の第1照射手段12に加えて左右後面の第2照射手段13及び第3照射手段14からもマイクロ波を照射できるため、第1の実施形態と同様の効果が得られるとともに、この第1照射手段12に加えて第2照射手段13及び第3照射手段14を備えて上下左右後面の全ての壁面から照射することにより、第1〜第3の実施形態に比べてより効果的に種々の角度からマイクロ波を照射することができる。
Furthermore, in the fourth embodiment of the microwave irradiation processing apparatus according to the present invention, as shown in FIG. 9, in addition to the upper and lower first irradiation means 12 in the batch type processing tank 20, the second irradiation is applied to all the left and right rear wall surfaces. It has a structure in which means 13 and third irradiation means 14 are provided, and is provided with a batch type treatment tank 20 for processing the processed material 1 in and out of a sealed hollow from the front, and microwaves are moved up and down in this treatment tank 20. It has the 1st irradiation means 12 which can be irradiated from both, and in addition to this 1st irradiation means 12, the 2nd irradiation means 13 which can be irradiated from the right-and-left both sides of processed material 1, and the front which takes in and out processed material 1 are opposed. And third irradiation means 14 capable of irradiating from the rear surface. That is, in the fourth embodiment, in addition to the first irradiation means 12 above and below the treatment tank 20, both the second irradiation means 13 in the second embodiment and the third irradiation means 14 in the third embodiment are all included. It is an attached structure, and microwaves can be irradiated from all wall surfaces other than the front surface where the processing object 1 is taken in and out, and other configurations are formed in the same manner as in the second and third embodiments.
Therefore, according to the fourth embodiment of the microwave irradiation processing apparatus of the present invention, the microwaves are also emitted from the second irradiation means 13 and the third irradiation means 14 on the left and right rear surfaces in addition to the first irradiation means 12 above and below the treatment tank 20. In addition to the first irradiating means 12, the second irradiating means 13 and the third irradiating means 14 are provided, and from all the upper, lower, left and right rear surfaces. By irradiating, it is possible to irradiate microwaves from various angles more effectively than in the first to third embodiments.

以上、本発明によるマイクロ波照射処理装置の実施の形態を詳細に説明したが、本発明は前述した実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で変更可能である。
例えば、図4に示した導波管に傾斜したホーン型の照射口を設けたコンベア式の第1実施形態を詳細に説明したが、これに限定されるものではなく、例えば、図7乃至9に示したバッチ式の第2、第3、及び第4の実施形態にも傾斜したホーン型の照射口を各々設けることが可能である。
As mentioned above, although embodiment of the microwave irradiation processing apparatus by this invention was described in detail, this invention is not limited to embodiment mentioned above, In the range which does not deviate from the summary, it can change.
For example, the first embodiment of the conveyor type in which the inclined horn-shaped irradiation port is provided in the waveguide shown in FIG. 4 has been described in detail. However, the present invention is not limited to this. For example, FIGS. The batch-type second, third, and fourth embodiments shown in the above can also be provided with inclined horn-shaped irradiation ports.

本発明によるマイクロ波照射処理装置の第1実施形態を示す構成図。(実施例1)The block diagram which shows 1st Embodiment of the microwave irradiation processing apparatus by this invention. (Example 1) 図1に示した第1実施形態と従来技術とによる加熱状態の対比を示す図。The figure which shows the contrast of the heating state by 1st Embodiment shown in FIG. 1, and a prior art. 図1に示した導波管の他の実施例を示す図。The figure which shows the other Example of the waveguide shown in FIG. 図3に示した矢印A方向から見た内部構造を示す図。The figure which shows the internal structure seen from the arrow A direction shown in FIG. 図4に示した照射口の他の実施例を示す図。The figure which shows the other Example of the irradiation port shown in FIG. 図3に示したホーン型の照射口の有無による加熱状態の対比を示す図。The figure which shows the contrast of the heating state by the presence or absence of the horn type irradiation port shown in FIG. 本発明によるマイクロ波照射処理装置の第2実施形態を示す構成図。(実施例2)The block diagram which shows 2nd Embodiment of the microwave irradiation processing apparatus by this invention. (Example 2) 本発明によるマイクロ波照射処理装置の第3実施形態を示す構成図。(実施例3)The block diagram which shows 3rd Embodiment of the microwave irradiation processing apparatus by this invention. Example 3 本発明によるマイクロ波照射処理装置の第4実施形態を示す構成図。(実施例4)The block diagram which shows 4th Embodiment of the microwave irradiation processing apparatus by this invention. Example 4 従来のマイクロ波照射処理装置の一実施形態を示す構成図。The block diagram which shows one Embodiment of the conventional microwave irradiation processing apparatus.

符号の説明Explanation of symbols

1 処理物
10 処理槽
11 コンベア
12 第1照射手段
12a マイクロ波発生器
12b アイソレータ
12c 整合器
13 第2照射手段
13a マイクロ波発生器
13b アイソレータ
13c 整合器
16 導波管
18 温度計
19 制御手段
19a 処理部
19b 制御部
DESCRIPTION OF SYMBOLS 1 Processed object 10 Processing tank 11 Conveyor 12 1st irradiation means 12a Microwave generator 12b Isolator 12c Matching device 13 2nd irradiation means 13a Microwave generator 13b Isolator 13c Matching device 16 Waveguide 18 Thermometer 19 Control means 19a Processing Part 19b control part

Claims (8)

処理槽内に処理物を搬入して上下面のいずれか一方或いは両方から導波管を介してマイクロ波発生器で発生させたマイクロ波を導入及び照射して乾燥または温度を上げるマイクロ波照射処理装置において、
前記処理物を前面から後面に搬送して処理するコンベア式の処理槽を備え、この処理槽にマイクロ波を前記上下面いずれか一方或いは両方から照射可能な第1照射手段と、この第1照射手段に加えて前記処理物の左右どちらか一方或いは両方の側面からも照射可能な第2照射手段とを備えたことを特徴とするマイクロ波照射処理装置。
Microwave irradiation process to bring the processed material into the processing tank and introduce or irradiate the microwave generated by the microwave generator from one or both of the upper and lower surfaces through the waveguide and increase the temperature by drying or irradiation. In the device
A conveyor-type treatment tank that conveys and processes the processed material from the front surface to the rear surface, and a first irradiation means that can irradiate the microwave from either one or both of the upper and lower surfaces, and the first irradiation. In addition to the means, there is provided a second irradiation means capable of irradiating from the left or right side or both sides of the processed material.
処理槽内に処理物を搬入して上下面のいずれか一方或いは両方から導波管を介してマイクロ波発生器で発生させたマイクロ波を導入及び照射して乾燥または温度を上げるマイクロ波照射処理装置において、
前記処理物を密閉された中空内に前面から出し入れして処理するバッチ式の処理槽を備え、この処理槽にマイクロ波を前記上下面いずれか一方或いは両方から照射可能な第1照射手段を有し、この第1照射手段に加えて前記処理物の左右どちらか一方或いは両方の側面から照射可能な第2照射手段と、前記処理物を出し入れする前面と対向する後面から照射可能な第3照射手段とのいずれか一方または両方を備えたことを特徴とするマイクロ波照射処理装置。
Microwave irradiation process to bring the processed material into the processing tank and introduce or irradiate the microwave generated by the microwave generator from one or both of the upper and lower surfaces through the waveguide and increase the temperature by drying or irradiation. In the device
A batch-type treatment tank is provided for processing the processed material by putting it in and out of a sealed hollow from the front, and the treatment tank has a first irradiation means capable of irradiating microwaves from one or both of the upper and lower surfaces. In addition to the first irradiation means, the second irradiation means capable of irradiating from the left or right or both side surfaces of the processed material, and the third irradiation capable of irradiating from the rear surface facing the front surface for taking in and out the processed material. One or both of the means are provided. A microwave irradiation processing apparatus characterized by comprising:
請求項1または2に記載のマイクロ波照射処理装置において、
前記第1照射手段、第2照射手段、及び第3照射手段は、前記処理槽に導波管を介して各々接続されてこの各方向にそれぞれ、マイクロ波を発生させるマイクロ波発生器と、前記導波管から反射する電力を吸収して前記マイクロ波発振器を保護するアイソレータと、前記処理槽のインピーダンス整合をとりマイクロ波電力を有効利用する整合器とを各々備えたことを特徴とするマイクロ波照射処理装置。
In the microwave irradiation processing apparatus of Claim 1 or 2,
The first irradiating means, the second irradiating means, and the third irradiating means are each connected to the processing tank via a waveguide and generate a microwave in each direction, and the microwave generator, A microwave comprising: an isolator that absorbs power reflected from the waveguide and protects the microwave oscillator; and a matching unit that performs impedance matching of the processing tank and effectively uses the microwave power Irradiation processing device.
請求項3に記載のマイクロ波照射処理装置において、
前記マイクロ波発生器には、前記処理槽に前記導波管を介して各方向からそれぞれ同時または別々に前記マイクロ波を照射可能に制御する制御手段を接続していることを特徴とするマイクロ波照射処理装置。
In the microwave irradiation processing apparatus of Claim 3,
Control means for controlling the microwave to be able to irradiate the microwave simultaneously or separately from each direction through the waveguide is connected to the microwave generator. Irradiation processing device.
請求項4に記載のマイクロ波照射処理装置において、
前記制御手段は、前記処理槽にマイクロ波照射中の前記処理物の温度を測定するサーモパイル式またはサーミスタ式の赤外温度計を少なくとも1つ以上設置して接続するとともに、この温度計の温度データに応じて前記マイクロ波発生器の出力を制御して前記処理物の温度状態を監視可能にすることを特徴とするマイクロ波照射処理装置。
In the microwave irradiation processing apparatus of Claim 4,
The control means installs and connects at least one thermopile type or thermistor type infrared thermometer for measuring the temperature of the treatment object during microwave irradiation to the treatment tank, and temperature data of the thermometer The microwave irradiation processing apparatus is characterized in that the temperature state of the processing object can be monitored by controlling the output of the microwave generator according to the above.
請求項3に記載のマイクロ波照射処理装置において、
前記導波管は、前記処理槽に各方向からマイクロ波を導入する際にテーパを有して徐々に広がるホーン型に形成した照射口を設け、この照射口が前記処理槽の外部から内部に至る間で広がるように延在したことを特徴とするマイクロ波照射処理装置。
In the microwave irradiation processing apparatus of Claim 3,
The waveguide is provided with an irradiation port formed in a horn shape having a taper when the microwave is introduced into the processing tank from each direction, and the irradiation port is provided from the outside to the inside of the processing tank. A microwave irradiation processing apparatus characterized by extending so as to spread throughout.
請求項6に記載のマイクロ波照射処理装置において、
前記導波管は、前記ホーン型の照射口を前記処理槽内の処理物近傍まで近接するように延在したことを特徴とするマイクロ波照射処理装置。
In the microwave irradiation processing apparatus of Claim 6,
The microwave irradiation processing apparatus, wherein the waveguide extends so that the horn-shaped irradiation port is close to the vicinity of the processing object in the processing tank.
請求項6または7に記載のマイクロ波照射処理装置において、
前記導波管は、前記ホーン型に広がって延長するテーパ長が前記マイクロ波の波長の長さに設けたことを特徴とするマイクロ波照射処理装置。
In the microwave irradiation processing apparatus of Claim 6 or 7,
The microwave irradiation processing apparatus according to claim 1, wherein the waveguide has a taper length extending in the horn shape and extending to a length of the wavelength of the microwave.
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