JP2009130056A - Mounting structure of semiconductor element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a mounting structure of semiconductor elements, reducing a stress generated in a semiconductor element. <P>SOLUTION: In this mounting structure, a semiconductor element 1 is bonded to a substrate in three positions corresponding to three apexes of an imaginary triangle defined based on an outer circumference shape of the semiconductor element 1 through an adhesion part 2 composed of an adhesive (for example, a silicon-based resin such as a silicon resin having an elastic modulus of 1 MPa or less). Here, in the semiconductor element 1, all pads 19 are arranged along one side in the surface side (the above one surface side) opposite a substrate 3 side and the adhesion part 2 is positioned at each apex of an imaginary triangle having three apexes at three positions including two positions of both terminals of the above one side and one position on one side parallel to the above one side, so that a bonding wire is stably bonded to each pad 19. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor element mounting structure in which a semiconductor element is mounted on a substrate.

  In response to the need for smaller and more functional electronic devices, IC chips using low dielectric constant (low-k) materials as interlayer dielectrics and semiconductor elements such as MEMS (Micro Electro Mechanical Systems) devices are being developed in various places. However, this type of semiconductor element is fragile, and stress generated in a mounting process for mounting on a substrate (for example, a ceramic substrate, a printed wiring substrate, etc.) is regarded as a problem.

  On the other hand, an acceleration sensor in which a semiconductor acceleration sensor chip, which is a semiconductor element, is mounted on a substrate has been proposed as a semiconductor element mounting structure in which stress generated in the mounting process is reduced (for example, patent document). 1).

Here, the acceleration sensor described in Patent Document 1 includes, for example, as shown in FIG. 6, a semiconductor element 1 ′ composed of a semiconductor acceleration sensor chip, and a box shape with one surface open and an inner bottom surface. A substrate (package) 3 ′ in which four positions on the back surface side of the semiconductor element 1 ′ are fixed to the mounting surface 3 a ′ by an adhesive portion 2 ′ made of an adhesive, and a signal processing circuit that cooperates with the semiconductor element 1 ′ are formed. An IC substrate 5 ′ fixed at four locations on the main surface side of the semiconductor element 1 ′ with an adhesive portion 4 ′ made of an adhesive, and a rectangular plate-shaped package lid 6 ′ that closes the one surface of the substrate 3 ′. ing. Here, in the said patent document 1, the silicone resin with which the spherical spacer was mixed is used as above-mentioned adhesive agent 2 ', 4'. The pad 19 ′ on the main surface side of the semiconductor element 1 ′ is electrically connected to the pad 59 ′ of the IC substrate 5 ′ via the bonding wire 71 ′.
JP 2006-133123 A

  In the mounting structure of the semiconductor element 1 ′ described above, the semiconductor element 1 ′ is fixed to the substrate 3 ′ at the four positions by the bonding portions 2 ′. Therefore, when mounting the semiconductor element 1 ′ on the substrate 3 ′, FIG. As shown in a), after the adhesive 2a ′ is applied to the four places on the mounting surface 3a ′ of the semiconductor element 1 ′ on the substrate 3 ′ at room temperature and then the semiconductor element 1 ′ is mounted, the adhesive 2a ′ is applied. When it is heated to a predetermined temperature (for example, 150 ° C.) so as to be cured, the substrate 3 ′ is thermally deformed as shown in FIG. 7B, and thereafter, when it reaches room temperature, the substrate 3 is heated as shown in FIG. 7C. Although the semiconductor element 1 ′ is fixed in a state where the substrate 3 ′ is thermally deformed, the semiconductor element 1 ′ is deformed and stress is generated, although the semiconductor element 1 ′ is fixed in a state where it is not deformed.

  The present invention has been made in view of the above-described reasons, and an object thereof is to provide a semiconductor element mounting structure capable of reducing stress generated in the semiconductor element.

  The invention of claim 1 is a mounting structure of a semiconductor element in which a semiconductor element is mounted on a substrate, the outer peripheral shape of the semiconductor element is rectangular, and the virtual triangle defined by the semiconductor element based on the outer peripheral shape of the semiconductor element It is characterized in that it is fixed to the substrate at three locations corresponding to the three apexes of the above by adhesive portions made of an adhesive.

  According to this invention, the semiconductor element is fixed to the substrate by the adhesive portions made of the adhesive at three locations corresponding to the three vertices of the virtual triangle defined based on the outer peripheral shape of the semiconductor element. The semiconductor element can be prevented from being deformed due to a temperature change during mounting or the like, and the stress generated in the semiconductor element can be reduced.

  The invention of claim 2 is characterized in that, in the invention of claim 1, the adhesive is a silicone resin.

  According to this invention, by using a silicone resin having a lower elastic modulus than the epoxy resin as the adhesive, it is possible to suppress the transmission of stress from the substrate to the semiconductor element.

  According to a third aspect of the present invention, in the first or second aspect of the present invention, the adhesive is a mixture of spherical spacers.

  According to this invention, the gap length between the semiconductor element and the substrate can be secured by the spacer, and the thickness accuracy of the adhesive portion between the semiconductor element and the substrate can be improved. . According to the present invention, the gap length between the semiconductor element and the substrate can be increased by the spacer, and the effect of suppressing the transmission of stress from the substrate to the semiconductor element is also increased.

  According to a fourth aspect of the present invention, in the third aspect of the present invention, the spacer is formed of silica or silicon.

  According to this invention, compared with the case where the spacer is formed of metal or synthetic resin, the dimensional accuracy of the spacer can be increased, and the thickness accuracy of the adhesive portion between the semiconductor element and the substrate is increased. Can be further improved.

  According to a fifth aspect of the present invention, in the first to fourth aspects of the invention, each of the bonding portions is located on an outer peripheral portion of the semiconductor element.

  According to this invention, the said semiconductor element can be fixed stably compared with the case where each said adhesion part is located inside the outer peripheral part of the said semiconductor element.

  According to a sixth aspect of the present invention, in the first to fifth aspects of the invention, in the semiconductor element, all the pads are arranged along one side on the surface side opposite to the substrate side. The adhesive portion is characterized by being located at three locations, two locations at both ends of the side and one location on a side parallel to the one side.

  According to this invention, a bonding wire can be stably bonded to each pad.

  The invention of claim 7 is the invention of claims 1 to 5, wherein the semiconductor element is arranged along two sides where all pads are adjacent on the surface side opposite to the substrate side, The adhesive portion is located at three locations, one at one end common to the two sides and two at the other end of each of the two sides.

  According to this invention, a bonding wire can be stably bonded to each pad.

  According to the first aspect of the invention, there is an effect that the stress generated in the semiconductor element can be reduced.

(Embodiment 1)
In the present embodiment, as shown in FIG. 1, a mounting structure in which a semiconductor element 1 composed of a semiconductor acceleration sensor chip is mounted on a substrate 3 (for example, a printed wiring board using a ceramic substrate or a glass epoxy resin substrate) will be described.

  The semiconductor element 1 includes a frame portion 11 having a frame shape (in this embodiment, a rectangular frame shape), and a weight portion 12 arranged inside the frame portion 11 is on one surface side (upper surface side in FIG. 1B). Are supported by the frame portion 11 through four flexible strip portions 13 having flexibility. In other words, the semiconductor element 1 is swingably supported by the frame portion 11 via the four flexure portions 13 extending from the weight portion 12 in the four directions, the weight portion 12 disposed inside the frame-shaped frame portion 11. Has been. Here, the semiconductor element 1 processes an SOI wafer having an n-type silicon layer (active layer) 10c on an insulating layer (buried oxide film) 10b made of a silicon oxide film on a support substrate 10a made of a silicon substrate. The frame portion 11 is formed using the support substrate 10a, the insulating layer 10b, and the silicon layer 10c of the SOI wafer. On the other hand, the bending portion 13 is formed using the silicon layer 10 c in the SOI wafer and is thinner than the frame portion 11.

  The weight portion 12 is continuously integrated with each of the rectangular parallelepiped core portion 12a supported by the frame portion 11 via the four flexure portions 13 and the four corners of the core portion 12a when viewed from the one surface side of the semiconductor element 1. And four accompanying portions 12b having a rectangular parallelepiped shape connected to each other. In other words, the weight portion 12 is formed integrally with the core portion 12a and the core portion 12a in which the other end portion of each bending portion 13 whose one end portion is connected to the inner side surface of the frame portion 11 is connected to the outer surface. It has four accompanying parts 12b arranged in the space between the part 12a and the frame part 11. In other words, each associated portion 12b is surrounded by the frame portion 11 and the core portion 12a and the two bent portions 13 and 13 extending in a direction orthogonal to each other in a plan view as viewed from the one surface side of the semiconductor element 1. The slits 14 are formed between each of the accompanying portions 12 b and the frame portion 11, and the interval between the adjacent accompanying portions 12 b across the bending portion 13 is larger than the width dimension of the bending portion 13. It is getting longer. Here, the core portion 12a is formed using the above-described SOI wafer support substrate 10a, the insulating layer 10b, and the silicon layer 10c, and each accompanying portion 12b is formed using the SOI wafer support substrate 10a. It is. Thus, on the one surface side of the semiconductor element 1, the surface of each associated portion 12b is separated from the plane including the surface of the core portion 12a to the other surface side of the semiconductor element 1 (the lower surface side in FIG. 1B). Is located. In addition, what is necessary is just to form the above-mentioned flame | frame part 11, the weight part 12, and each bending part 13 of the semiconductor element 1 using micromachining technology.

  By the way, as shown in the lower right of each of FIGS. 1A and 1B, one direction along one side of the frame portion 11 in a plane parallel to the one surface of the semiconductor element 1 is defined as the positive direction of the x axis. If one direction along the side perpendicular to the one side is defined as the positive direction of the y-axis and one direction of the thickness direction of the semiconductor element 1 is defined as the positive direction of the z-axis, the weight portion 12 is extended in the x-axis direction. The pair of flexible portions 13 and 13 sandwiching the core portion 12a and the pair of flexible portions 13 and 13 extending in the y-axis direction and sandwiching the core portion 12a are supported by the frame portion 11. Will be. In the orthogonal coordinates defined by the three axes of the above-described x axis, y axis, and z axis, the center position of the weight portion 12 on the surface of the portion of the semiconductor element 1 formed by the above silicon layer 10c is the origin.

  A bending portion 13 (the right-side bending portion 13 in FIG. 1A) extending from the core portion 12a of the weight portion 12 in the positive direction of the x-axis is a pair of gauge resistances Rx2 and Rx4 in the vicinity of the core portion 12a. And one gauge resistor Rz2 is formed in the vicinity of the frame portion 11. On the other hand, the bending portion 13 (the bending portion 13 on the left side of FIG. 1A) extending in the negative direction of the x-axis from the core portion 12a of the weight portion 12 has a pair of gauge resistances Rx1 in the vicinity of the core portion 12a. , Rx3, and one gauge resistor Rz3 is formed in the vicinity of the frame portion 11. Here, the four gauge resistors Rx1, Rx2, Rx3, Rx4 formed in the vicinity of the core portion 12a are formed to detect acceleration in the x-axis direction, and the planar shape is an elongated rectangular shape. 2 is formed so that the longitudinal direction thereof coincides with the longitudinal direction of the bending portion 13 and wiring (not shown) (diffuse layer wiring formed on the semiconductor element 1, metal) so as to constitute the left bridge circuit Bx in FIG. Connected by wiring). The gauge resistances Rx1 to Rx4 are formed in a stress concentration region where stress is concentrated in the bending portion 13 when acceleration in the x-axis direction is applied.

  Further, the bending portion 13 (the upper bending portion 13 in FIG. 1A) extended from the core portion 12a of the weight portion 12 in the positive direction of the y-axis is a pair of gauge resistors Ry1, in the vicinity of the core portion 12a. Ry3 is formed, and one gauge resistor Rz1 is formed in the vicinity of the frame portion 11. On the other hand, the bending portion 13 (the lower bending portion 13 in FIG. 1A) extended from the core portion 12a of the weight portion 12 in the negative direction of the y-axis is a pair of gauge resistances Ry2 in the vicinity of the core portion 12a. , Ry4 are formed, and one gauge resistor Rz4 is formed at the end on the frame part 11 side. Here, the four gauge resistors Ry1, Ry2, Ry3, Ry4 formed in the vicinity of the core portion 12a are formed to detect acceleration in the y-axis direction, and the planar shape is an elongated rectangular shape. 2 is formed so that the longitudinal direction thereof coincides with the longitudinal direction of the bent portion 13 and wiring (not shown) (diffuse layer wiring formed on the semiconductor element 1, metal) so as to constitute the central bridge circuit By in FIG. Connected by wiring). Note that the gauge resistors Ry1 to Ry4 are formed in a stress concentration region where stress is concentrated in the flexure 13 when acceleration in the y-axis direction is applied.

  Further, the four gauge resistors Rz1, Rz2, Rz3, and Rz4 formed in the vicinity of the frame portion 11 are formed to detect acceleration in the z-axis direction, and constitute the right bridge circuit Bz in FIG. Thus, they are connected by wiring (not shown) (diffusion layer wiring, metal wiring, etc. formed in the semiconductor element 1). However, the gauge resistances Rz1 and Rz4 formed in one set of the bending portions 13 and 13 of the pair of bending portions 13 and 13 are formed so that the longitudinal direction thereof coincides with the longitudinal direction of the bending portions 13 and 13. On the other hand, the gauge resistances Rz2 and Rz3 formed on the other set of flexures 13 and 13 are formed such that the longitudinal direction coincides with the width direction (short direction) of the flexures 13 and 13. Yes.

  Here, an example of a basic operation of the semiconductor element 1 will be described.

  Now, assuming that acceleration is applied to the semiconductor element 1 in the positive x-axis direction while no acceleration is applied to the semiconductor element 1, the frame portion 11 is caused by the inertial force of the weight 12 acting in the negative x-axis direction. Accordingly, the weight 12 is displaced, and as a result, the bending portions 13 and 13 whose longitudinal direction is the x-axis direction are bent, and the resistance values of the gauge resistors Rx1 to Rx4 formed in the bending portions 13 and 13 change. Will do. In this case, the gauge resistances Rx1 and Rx3 are subjected to tensile stress, and the gauge resistances Rx2 and Rx4 are subjected to compressive stress. In general, gauge resistance has a characteristic that resistance value (resistivity) increases when subjected to tensile stress, and resistance value (resistivity) decreases when subjected to compressive stress. As the value increases, the resistance values of the gauge resistors Rx2 and Rx4 decrease. Therefore, if a constant DC voltage is applied from the external power supply between the pair of input terminals VDD and GND shown in FIG. 2, the potential difference between the output terminals X1 and X2 of the left bridge circuit Bx shown in FIG. It changes according to the magnitude of the acceleration in the x-axis direction. Similarly, when acceleration in the y-axis direction is applied, the potential difference between the output terminals Y1 and Y2 of the central bridge circuit By shown in FIG. 2 changes according to the magnitude of the acceleration in the y-axis direction, and the z-axis When acceleration in the direction is applied, the potential difference between the output terminals Z1 and Z2 of the right bridge circuit Bz shown in FIG. 2 changes according to the magnitude of acceleration in the z-axis direction. Therefore, the above-described semiconductor element 1 detects the change in the output voltage of each of the bridge circuits Bx to Bz, thereby accelerating each acceleration acting on the semiconductor element 1 in the x-axis direction, the y-axis direction, and the z-axis direction. Can be detected.

  Here, the semiconductor element 1 includes two input terminals VDD and GND common to the above-described three bridge circuits Bx, By, and Bz, two output terminals X1 and X2 of the bridge circuit Bx, and two bridge circuits By. The output terminals Y1 and Y2 and the two output terminals Z1 and Z2 of the bridge circuit Bz are provided. These input terminals VDD and GND and the output terminals X1, X2, Y1, Y2, Z1 and Z2 A pad (external connection electrode) 19 is provided on one surface side. Here, the eight pads 19 are arranged along one side of the semiconductor element 1. In the semiconductor element 1, an insulating film 16 made of a laminated film of a silicon oxide film and a silicon nitride film is formed on the silicon layer 10 c on the one surface side, and the pad 19 and the metal wiring are the insulating film 16. Formed on top.

  The gauge resistances (piezoresistors) Rx1 to Rx4, Ry1 to Ry4, Rz1 to Rz4 and the diffusion layer wirings described above are formed by doping p-type impurities with appropriate concentrations at respective formation sites in the silicon layer 10c. The metal wiring is formed by patterning a metal film (for example, an Al film, an Al alloy film, etc.) formed on the insulating film 16 by sputtering or vapor deposition using a lithography technique and an etching technique. Has been. The metal wiring is electrically connected to the diffusion layer wiring through a contact hole provided in the insulating film 16.

  By the way, the semiconductor element 1 has an adhesive (for example, a silicone-based resin such as a silicone resin having an elastic modulus of 1 MPa or less) at three positions corresponding to the three vertices of the virtual triangle defined based on the outer peripheral shape of the semiconductor element 1. Are fixed to the substrate by an adhesive portion 2 made of Here, in the semiconductor element 1, all the pads 19 are arranged along one side on the surface side opposite to the substrate 3 side (the one surface side), and two locations at both ends of the one side, The bonding portion 2 is located at each vertex of a virtual triangle having vertices at three locations, one on a side parallel to the one side, and a bonding wire can be stably bonded to each pad 19. .

  Hereinafter, the state changes of the semiconductor element 1 and the substrate 3 when the semiconductor element 1 is mounted on the substrate 3 will be described with reference to FIG. 3, wherein the upper stage in each of (a) to (c) is a schematic side view, and the lower stage is a schematic view. It is a perspective view.

  In mounting the semiconductor element 1 on the substrate 3, as shown in FIG. 3A, the adhesive 2a is applied to the three locations on the mounting surface 3a of the semiconductor element 1 on the substrate 3 at room temperature with a dispenser or the like. When the semiconductor element 1 is mounted and then heated to a predetermined temperature (for example, 150 ° C.) so that the adhesive 2a is cured, the substrate 3 is thermally deformed as shown in FIG. As shown in (c), the substrate 3 tries to return to a state without thermal deformation. Here, the semiconductor element 1 is fixed in a state where the substrate 3 is thermally deformed. However, since only the three portions are fixed to the substrate 3 by the bonding portion 2, the substrate due to temperature change when returning to room temperature. The deformation on the three side is transmitted to the semiconductor element 1 as the inclination of the semiconductor element 1, and the surface of the semiconductor element 1 can be determined at three points, and the semiconductor element 1 can be prevented from being deformed and generating stress. When the substrate 3 returns to room temperature, the semiconductor element 1 is slightly inclined as shown in the schematic perspective view in the lower part of FIG. 1C, but the height difference is a nanometer-level inclination, and there is no particular problem. When the chip size of the semiconductor element 1 is 1 mm □ to 10 mm □ and the thickness is about 0.1 mm to 1 mm, the adhesive 2a may be applied to an area of about φ200 μm to φ1000 μm.

  In the mounting structure of the semiconductor element 1 of the present embodiment described above, it is possible to suppress the deformation of the semiconductor element 1 due to a temperature change during mounting on the substrate 3 and the stress generated in the semiconductor element 1 is suppressed. It becomes possible to reduce. Here, if the semiconductor element 1 is a semiconductor acceleration sensor chip as described above, the four corners of the frame portion 11 are fixed (that is, fixed at four locations) or the frame portion 11 is placed around the entire circumference. Therefore, the stress from the substrate 3 to the semiconductor element 1 is less likely to act on the bent portion 13 than in the case where it is fixed, and stable acceleration measurement with high accuracy is possible.

  Further, in the present embodiment, by using a silicone resin having a lower elastic modulus than the epoxy resin as the adhesive 2a, the transmission of stress from the substrate 3 to the semiconductor element 1 is suppressed (that is, the stress is reduced). be able to. Here, if the adhesive 2a is made of a silicone resin mixed with a spherical spacer, the gap length between the semiconductor element 1 and the substrate 3 can be secured by the spacer. It is possible to improve the thickness accuracy of the bonding portion 2 between the substrate 3 and the semiconductor acceleration sensor chip constituting the semiconductor element 1, and to prevent damage due to excessive displacement of the weight portion 12. In addition, the gap length between the semiconductor element 1 and the substrate 3 can be increased by the spacer, and the effect of suppressing the transmission of stress from the substrate 3 to the semiconductor element 1 is also increased. Further, if the spacer is made of silica or silicon, the dimensional accuracy of the spacer can be increased as compared with the case where the spacer is made of metal or synthetic resin, and the adhesion between the semiconductor element 1 and the substrate 3 can be improved. It becomes possible to further improve the thickness accuracy of the portion 2. In addition, as said spacer, what has a diameter of 3 micrometers-30 micrometers is used, for example, what is necessary is just to mix in the ratio of about 1 to 20% with respect to silicone type resin.

  Further, according to the mounting structure of the semiconductor element 1 of the present embodiment, each bonding portion 2 is located on the outer peripheral portion of the semiconductor element 1, so that each bonding portion 2 is positioned on the inner side of the outer peripheral portion of the semiconductor element 1. The semiconductor element 1 can be stably fixed as compared with the case where it is used. Here, if the semiconductor element 1 is a semiconductor acceleration sensor chip as described above, a part of each bonding portion 2 is a slit 14 between the frame portion 11 and the weight portion 12 or between the weight portion 12 and the substrate 3. It is possible to eliminate malfunction due to the widening of the gap.

(Embodiment 2)
The mounting structure of the semiconductor element 1 of the present embodiment is substantially the same as that of the first embodiment. As shown in FIG. 4, the pad 19 in the semiconductor element 1 has one surface side (the surface side opposite to the substrate 3 side). ) Are arranged along two adjacent sides (the above-described pad 19 is provided on only two sides of the four sides of the rectangular frame-shaped frame portion 11), and one end common to the two sides is provided. The difference is that the bonding portion is located at three places, that is, two places at the other end of each of the two sides, and the other configuration is the same as that of the first embodiment, and thus the description thereof is omitted.

  Thus, in the mounting structure of the semiconductor element 1 according to the present embodiment, a bonding wire can be stably bonded to each pad 19, and wiring is performed when the semiconductor element 1 is a MEMS device such as a semiconductor acceleration sensor chip. In addition, the degree of design freedom can be increased, and the number of pads 19 can be increased.

  By the way, in each of the above-described embodiments, the semiconductor element 1 having a square outer shape in plan view is fixed to the substrate 3 by the bonding portion 2 at three positions. However, the position of the bonding portion 2 is the position of each embodiment. The position is not limited, and any position that can support the semiconductor element 1 in a balanced manner may be used, and the positions shown in FIGS. Here, FIG. 5A is the same as the arrangement of the bonding portions 2 in the second embodiment, and an example in which the bonding portions 2 are positioned at the three end points (corners) of the semiconductor element 1, FIG. An example in which the bonding portion 2 is located at the two end points of the semiconductor element 1 and the center of the side parallel to the side connecting the two end points, which is the same as the arrangement of the bonding portions 2 in the first embodiment, FIG. ), (D) are examples in which the bonding portion 2 is located between two end points of the semiconductor element 1 and one side adjacent to the side connecting the two end points. FIGS. An example in which the bonding portion 2 is located between one end point of 1 and the middle of two of the four sides, FIGS. 5 (k) and (l) are bonded to the middle of three of the four sides of the semiconductor element 1. The example in which the part 2 is located is shown. Here, the three bonding portions 2 are positioned so as to correspond to the vertices of the virtual triangle, but the area of the virtual triangle is large, and the center of the semiconductor element 1 is included in the virtual triangle. Desirably, when the pad 19 is arranged along one side of the semiconductor element 1 as in the first embodiment, the arrangement of the three bonding portions 2 is as shown in FIGS. When the arrangement shown in FIG. 5B is the best arrangement and the pads 19 are arranged along two adjacent sides of the semiconductor element 1 as in the second embodiment, the arrangement of the three bonding portions 2 is the same. The arrangement of FIG. (A) is the best arrangement.

  In each of the above-described embodiments, a piezoresistive semiconductor acceleration sensor chip is illustrated as an example of a MEMS device as the semiconductor element 1. However, the semiconductor element 1 is not limited to a semiconductor acceleration sensor chip, and for example, a capacitive acceleration sensor. It can also be applied to MEMS devices such as chips, gyro sensors, pressure sensors, microactuators, microrelays, microvalves, and infrared sensors, and IC chips. Further, the outer peripheral shape of the semiconductor element 1 is not limited to a square shape, but may be a rectangular shape.

1A and 1B show a mounting structure of a semiconductor element according to Embodiment 1, wherein FIG. 3A is a schematic plan view of a main part, and FIG. It is a circuit diagram of the semiconductor acceleration sensor chip which is a semiconductor element same as the above. It is explanatory drawing of the mounting process of the semiconductor element to the board | substrate in the same as the above. The mounting structure of the semiconductor element of Embodiment 2 is shown, (a) is a principal part schematic plan view, (b) is a principal part schematic sectional drawing. It is explanatory drawing of the example of arrangement | positioning of each adhesion part in the same as the above. The acceleration sensor in a prior art example is shown, (a) is a schematic exploded perspective view, (b) is a schematic sectional drawing. It is explanatory drawing of the mounting process of the semiconductor element which consists of a semiconductor acceleration sensor chip | tip on the board | substrate in the same as the above.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Adhesion part 2a Adhesive 3 Board | substrate 19 Pad

Claims (7)

  A semiconductor element mounting structure in which a semiconductor element is mounted on a substrate, the outer peripheral shape of the semiconductor element is rectangular, and the semiconductor element corresponds to three vertices of a virtual triangle defined based on the outer peripheral shape of the semiconductor element. A mounting structure of a semiconductor element, wherein the semiconductor element mounting structure is fixed to a substrate by adhesive portions made of an adhesive at three locations.   The semiconductor element mounting structure according to claim 1, wherein the adhesive is a silicone resin.   3. The semiconductor element mounting structure according to claim 1, wherein the adhesive is a mixture of spherical spacers.   4. The semiconductor element mounting structure according to claim 3, wherein the spacer is made of silica or silicon.   5. The semiconductor element mounting structure according to claim 1, wherein each of the bonding portions is located on an outer peripheral portion of the semiconductor element. 6.   In the semiconductor element, all pads are arranged along one side on the surface side opposite to the substrate side, and two places at both ends of the one side and one on a side parallel to the one side. The semiconductor element mounting structure according to claim 1, wherein the bonding portion is located at three locations.   In the semiconductor element, all pads are arranged along two adjacent sides on the surface side opposite to the substrate side, and one end common to the two sides and the other of the two sides. The semiconductor element mounting structure according to any one of claims 1 to 5, wherein the bonding portion is located at three locations including two ends.

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