JP2009117427A - Semiconductor device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a mounting structure which ensures excellent adhesion between an electrode or a semiconductor chip and a circuit board and underfill agent and also ensures excellent connection reliability while reducing generation of voids in the underfill agent, and to provide its production process. <P>SOLUTION: Electrodes 2 of a semiconductor chip 1 are bonded to electrode pads 4 of a circuit board 3. The gap between the semiconductor chip 1 and the circuit board 3 is sealed with a second resin layer 5. A first resin layer 7 is provided in close contact around the electrodes 2 of a semiconductor chip 1. The second resin layer 5 is provided around the first resin layer 7. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device, and more particularly to a semiconductor device in which an underfill is filled between a semiconductor element and a substrate, and a manufacturing method thereof.

  Many bumps are formed as electrodes on a semiconductor component such as a semiconductor element. The bumps are projecting electrodes that are formed on the circuit surface of the semiconductor element on which the LSI circuit is formed, and are mainly made of metal and have a height of several μm to 100 μm. The number of bumps provided in one semiconductor element is several to thousands depending on the scale of the LSI circuit. In a semiconductor component having a relatively large number of bumps, bumps are provided on almost the entire circuit surface. In this case, solder is often used as the bump metal, and a semiconductor device is often formed by flip-chip mounting.

  On the other hand, in a semiconductor component having a relatively small number of bumps, the bump is often placed in the periphery of the semiconductor component. In this case, thick gold pillars and gold studs are provided as bumps. Gold pillars are often bonded by interfacial bonding or ultrasonic bonding with a tin film coated on an electrode of a substrate on which a semiconductor component is mounted. In many cases, the gold stud is bonded to the electrode of the substrate by heat pressure welding or ultrasonic bonding.

  In the various flip-chip mountings described above, an adhesive is used for protecting the circuit surface and suppressing bump breakage. As a usage form of the adhesive, there are a case where it is used as an underfill agent between a semiconductor component and a substrate, and a case where it is used as a sealing agent covering the entire semiconductor component (for example, Patent Documents 1 and 2). reference.). Moreover, the component which improves the adhesiveness with an electrode may be added to an underfill (for example, refer patent document 3).

  Here, the adhesive used as the underfill agent and the adhesive used as the sealant often have different desired characteristics. The adhesive used as the sealant covers the surface where the circuit is not formed in flip chip mounting. Therefore, the underfill agent has the following circuit protection function and bump destruction prevention function against thermal cycling. do not need. On the other hand, an adhesive used as an underfill agent has a function of protecting a circuit from moisture and the like, and when a semiconductor device is at a high or low temperature, for example, a silicon semiconductor component (thermal expansion coefficient: 3 ppm / ° C.) and, for example, a glass epoxy In many cases, a function to prevent bump destruction due to a difference in thermal expansion coefficient from the substrate (thermal expansion coefficient: 17 ppm / ° C.), a function to bond and fix the semiconductor component and the substrate, and the like are often desired. Furthermore, in practical use, when the underfill agent is applied, characteristics such as no creeping of the underfill agent on the upper surface of the semiconductor component and no generation of voids in the underfill agent are important. The scooping up can contaminate the device and cause damage to the circuit as described later when voids are generated inside the underfill agent.

  The procedure for using the underfill agent is to fill the underfill agent between the semiconductor component and the substrate after joining the semiconductor component on the substrate (referred to as a post-injection method), or to the underfill on the substrate first. There is a method (referred to as a first-in method) in which a filling agent is provided and then a semiconductor component is flip-chip mounted on a substrate. The method of filling the underfill agent later (post-insertion method) is because the semiconductor parts are already bonded with bumps, so the underfill agent can be hardened together separately from the bonding of the semiconductor parts. The demand for reducing time is not so high.

  On the other hand, in the method in which the underfill agent is first provided on the substrate and then the semiconductor component is flip-chip mounted on the substrate (first-in method), the underfill agent is simultaneously applied when the semiconductor component and the substrate are bonded at a high temperature. Therefore, there is a great demand for an underfill agent that cures in a short time.

  The first-in method has the following advantages. In the method of filling the underfill agent later, when the bumps become finer, the mechanical strength of the underfill agent indicates the difference in thermal expansion coefficient between the semiconductor component and the substrate until the underfill agent is cured. However, such a problem can be avoided with the first-in method. The first-in method can also be used when a semiconductor component is mounted by heat pressing as described later.

In the first-in method, an underfill agent is applied on a substrate on which a plurality of electrodes are formed. At this point, the substrate is heated to 50 to 100 ° C., for example. Next, the semiconductor component on which a plurality of bumps are formed is aligned on the substrate. Finally, for example, a semiconductor component heated to 200 to 250 ° C. is pressed against the substrate, and the electrodes and the bumps are joined (thermal pressure welding). The reason why the substrate is heated to 50 to 100 ° C. in advance is to reduce the temperature difference from the temperature (200 to 250 ° C.) when the semiconductor component and the substrate are finally heat-welded. For this reason, the underfill agent has a characteristic that curing does not proceed at a temperature of 50 to 100 ° C. in a state where it is applied on the substrate, a viscosity increase is small, and when the temperature is raised to 200 to 250 ° C. thereafter, the underfill agent is cured quickly. It is preferable. In particular, in practice, a plurality of semiconductor components are often mounted on a single substrate, and the viscosity stability within a certain time after application to the substrate is important. Moreover, it is preferable on manufacture that an underfill agent hardens | cures in a short time. This is because there is a problem that the process cost increases as the time required for curing increases.
JP 2002-110715 A JP 2007-56070 A JP 2003-327669 A

  As described above, the underfill agent used in the first-in method hardly increases in viscosity at a certain temperature or lower (or has a low curing rate), and has a short curing time at a certain temperature or higher (or has a high curing rate). Is required. Specifically, the time required to cure the underfill agent on the bonder is currently several seconds to several tens of seconds. From the viewpoint of cost reduction, an underfill agent that can further shorten this curing time is desired. ing.

  Furthermore, in the first-in method, when the semiconductor component is mounted, the underfill agent provided on the substrate is rapidly spread over the semiconductor component, so that voids are more likely to occur than in the last-in method. There is a problem of becoming.

  FIG. 1 is a cross-sectional view of a semiconductor device showing a state where voids are generated. In FIG. 1, an electrode 2 of a semiconductor chip 1 is flip-chip bonded to an electrode pad 4 of a circuit board 3, and an underfill 5 is filled between the semiconductor chip 1 and the circuit board 3. Void 6 is generated when underfill 5 flows around electrode 2. The void 6 is a space in which air is confined in the underfill 5.

  If a void is generated, there is a possibility that it may become a starting point of peeling between the semiconductor component and the underfill or between the substrate and the underfill, or moisture may accumulate in the void and cause circuit damage. For the underfill for the first-in method, it is an important required characteristic that the generation of voids is small.

  The cause of voids is not widely specified, but the factors on the underfill side when mounting by the first-in method are miniaturization of electrodes, uneven shape of electrode surface, and complicated electrode arrangement. Etc. are considered. Due to these factors, it is considered that the resin that is the underfill agent is less likely to flow and air is likely to be entrained. In particular, when the electrode material is gold, it is chemically stable, and the wettability of the underfill agent with the resin is particularly bad, so it is likely to cause voids. On the other hand, as proposed in Patent Document 3 above, when a component that enhances the adhesion to the electrode is added to the underfill agent in advance, the component (for example, sulfur) that enhances the adhesion and the inside and outside of the underfill agent are added. There is a possibility that the moisture reacts to cause corrosion of the electrode pad. In addition, unreacted adhesion enhancing components remain in the cured underfill, so that the original underfill adhesion strength cannot be obtained, and stress concentration occurs during temperature cycle testing, resulting in an underfill resin. Cracks may occur.

  The present invention has been made in view of the above-described problems, has less voids in the underfill, has excellent adhesion between the electrodes, the semiconductor chip and the circuit board, and the underfill, and also has excellent connection reliability. It is an object of the present invention to provide a semiconductor device having a structure and a manufacturing method thereof.

  In order to achieve the above object, according to the present invention, an electrode of a semiconductor chip is bonded to an electrode pad of a circuit board, and a gap between the semiconductor chip and the circuit board is sealed with a second resin layer. In the semiconductor device, a first resin layer is provided in close contact with the electrode of the semiconductor chip, and the second resin layer is provided around the first resin layer. A semiconductor device is provided.

  According to the present invention, a step of supplying a first resin to an electrode of a semiconductor chip or an electrode pad of a circuit board and forming a first resin layer covering the electrode or electrode pad; Supplying a second resin to the circuit board, bonding the electrode of the semiconductor chip and the electrode pad of the circuit board by pressure welding or ultrasonic bonding, and curing the second resin. A method for manufacturing a semiconductor device is provided.

  ADVANTAGE OF THE INVENTION According to this invention, the underfill structure which is excellent in the close_contact | adherence with the electrode and electrode pad of a semiconductor chip and a circuit board, there are few generation | occurrence | production of a void, and can also endure the stress which generate | occur | produces in a temperature cycle test is realizable. . The semiconductor device according to the present invention manufactured using the second resin layer as an underfill can enhance the connection reliability between the semiconductor chip and the circuit board. Furthermore, according to the method for manufacturing a semiconductor device according to the present invention, a semiconductor device having high connection reliability between a semiconductor chip and a circuit board can be manufactured at low cost.

  An embodiment of the present invention will be described with reference to the drawings. FIG. 2 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention.

  In FIG. 2, the electrode 2 of the semiconductor chip 1 is flip-chip bonded to the electrode pad 4 of the circuit board 3, and an underfill 5 that forms a second resin layer is formed between the semiconductor chip 1 and the circuit board 3. Filled. In the present embodiment, an adhesive resin layer 7 is provided as a first resin layer around the electrode 2 of the semiconductor chip 1. The underfill 5 is provided so as to cover the adhesion resin layer 7.

  The adhesion resin layer 7 that is the first resin layer is formed of a resin having high adhesion to the electrode 2 of the semiconductor chip 1. The electrode 2 of the semiconductor chip 1 is often formed of at least one of gold (Au), silver (Ag), copper (Cu), nickel (Ni), tin (Sn) or an alloy thereof. As the resin of the adhesion resin layer 7, a material having excellent adhesion to these metals or alloys is selected.

  As a method for imparting such adhesion to the resin, in the present embodiment, a compound containing a specific functional group is used as the resin for forming the adhesion resin layer 7. As such a compound, a coupling agent such as a silane coupling agent or a thiol compound can be used. That is, the compound used as the resin for forming the adhesion resin layer 7 contains at least one of a thiol group, a disulfide group, an amino group, a hydroxyl group, and a carboxyl group.

  As the silane coupling agent, the organic functional group contains, for example, at least one of a vinyl group, an epoxy group, a nitro group, a methacryl group, an amino group, a mercapto group, an isocyanato group, a carboxyl group, and a hydroxyl group. For example, a compound in which the functional group contains at least one of a chloro group, an alkoxy group, an acetoxy group, an isopropenoxy group, and an amino group is used. More specifically, 3-mercaptopropyltrimethoxysilane is preferably used as the silane coupling agent. In addition, for example, vinyltrichlorosilane, vinylmethoxysilane, vinyltris (2methoxyethoxy) silane, vinyltrimethyl Ethoxysilane, vinyltrimethoxysilane, 3- (methacryloxypropyl) trimethoxysilane, 2- (3,4 epoxycyclohexyl) 3-glycidoxypropyl 3-methyldiethoxysilane, M-2 (aminoethyl) 3-amino Propyltrimethoxysilane, N-2 (aminoethyl) 3-aminopropylmethyldimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3- Black It may be used at least one of a propyl trimethoxysilane.

  In addition, triazine thiol is preferably used as the thiol compound, but besides that, ethanethiol, benzenethiol, butane-2,3-dithiol, hexa-5-ene-3-thiol, 5-hexene-3. Any of thiols and the like may be used.

  The compound containing the specific functional group described above is excellent in wettability with respect to the metal forming the electrode of the semiconductor chip. Therefore, when the silane coupling agent or thiol compound described above is used as a resin for forming the adhesion resin layer 7, the resin can be easily adhered to the surface of the electrode. The specific functional group described above reacts with the metal forming the electrode of the semiconductor chip to form a strong bond. Therefore, when the above-mentioned silane coupling agent or thiol compound is used as the resin for forming the adhesion resin layer 7, the resin can be firmly adhered to the surface of the electrode.

  As the metal forming the electrode of the semiconductor chip, gold (Au), silver (Ag), copper (Cu), nickel (Ni), tin (Sn), or an alloy thereof can be used. Since gold (Au) is excellent in adhesion to the above-described silane coupling agent and thiol compound, it is preferable to use gold (Au) as a metal for forming an electrode of a semiconductor chip.

  In this embodiment, the adhesion resin layer 7 is formed on the surface of the electrode 2 of the semiconductor chip 1, and the underfill 5 is filled around the adhesion resin layer 7. The adhesion resin layer 7 is a resin, and the adhesion with the underfill 5 which is also a resin is good. Therefore, the electrode 2 and the underfill 5 are in a state of being firmly adhered via the adhesion resin layer 7, and can be prevented from being peeled off between the electrode 2 and the underfill 5, and around the electrode 2. Generation of voids can be prevented.

  As described above, in the semiconductor device according to the present embodiment, the adhesive resin layer 7 is excellent in the adhesiveness between the electrode 2 of the semiconductor chip 1 and the electrode pad 4 of the circuit board 3, is less likely to generate voids, and is a temperature cycle test. Can withstand the stresses generated in Therefore, the semiconductor device according to the present embodiment manufactured by forming the adhesion resin layer 7 on the surface of the electrode 2 and then filling the underfill 5 has high connection reliability between the semiconductor chip 1 and the circuit board 3.

  Next, a method for manufacturing a semiconductor device according to this embodiment will be described with reference to FIG.

  First, as shown in FIG. 3A, a semiconductor chip 1 having an electrode 2 is prepared. Next, as shown in FIG. 2B, a resin (first resin) that is a compound containing the specific functional group described above is supplied to the surface of the electrode 2 of the semiconductor chip 1 by, for example, applying it. Since the first resin is cured to become the above-described adhesion resin layer 7 (first resin layer), the same reference numeral 7 as that of the adhesion resin layer 7 is attached to the first resin for convenience. The specific functional group contained in the first resin 7 reacts with the material of the electrode 2 to form a strong bond. At this time, the first resin 7 may be heat-treated in order to promote and complete the reaction. As a method for supplying and attaching the first resin 7 to the surface of the electrode 2, any method can be used as long as it can form a thin film that covers the outer periphery of the electrode 2 with the liquid first resin 7. Method or potting method is used.

  The surface roughness of the electrode 2 covered with the first resin is smaller than the surface roughness of the electrode 2 before being covered with the first resin due to the reaction of the specific functional group with the surface of the electrode. Become.

  Next, a liquid underfill agent for forming the underfill 5 is supplied between the semiconductor chip 1 and the circuit board 3 (for convenience, the underfill agent is given the same reference numeral 5 as the underfill 5). . Specifically, in this embodiment, as shown in FIG. 3C, the underfill agent 5 (second resin) is supplied to the surface of the semiconductor chip 1 on which the electrode 2 is provided. The underfill agent 5 may be applied to the entire surface of the semiconductor chip 1 so as to cover the adhesion resin layer 7 as shown in FIG. 3C, but the underfill agent 5 is partially applied to the surface of the semiconductor chip 1. The underfill agent 5 may spread to cover the adhesive resin layer 7 when the semiconductor chip 1 is bonded to the circuit board 3. Alternatively, the underfill agent 5 is supplied to the surface of the circuit board 3 on which the electrode pads 4 are provided so that the underfill agent 5 spreads so as to cover the adhesion resin layer 7 when the semiconductor chip 1 is mounted. May be.

When the underfill agent 5 is supplied, the semiconductor chip 1 is then placed on the circuit board 3 as shown in FIG. 3D, and the electrodes 2 of the semiconductor chip 1 are positioned with respect to the electrode pads 4 of the circuit board 3. Match. Subsequently, as shown in FIG. 3E, the electrode 2 of the semiconductor chip 1 is bonded to the electrode pad 4 of the circuit board 3. As a bonding method, pressure welding or ultrasonic bonding can be used. At this time, the first resin film covering the electrode 2 of the semiconductor chip 1 is pierced by the electrode 2,
The electrode 2 is in direct contact with the electrode pad 4. At this time, the part of the first resin film that has been pierced moves to the surface of the electrode pad 4, and the electrode pad 4 is also covered with the first resin film.

  In addition, when the electrode 2 of the semiconductor chip 1 is bonded to the electrode pad 4 of the circuit board 3, a predetermined gap is maintained between the semiconductor chip 1 and the circuit board 3. The filling agent 5 is filled.

  As shown in FIG. 3F, when the bonding of the electrode 2 of the semiconductor chip 1 to the electrode pad 4 of the circuit board 3 is completed, the first resin 7 and the underfill agent 5 are heated and cured if necessary. The first resin is cured to form the adhesive resin layer 7, and the underfill agent, which is the second resin, is cured to form the underfill 5, thereby completing the semiconductor device.

  In the manufacturing process described above, a silane coupling agent is used as the first resin 7 for the electrode 2 of the semiconductor chip 1, but a thiol compound may be used as the first resin 7 as described above. In the step shown in FIG. 3B, the first resin is applied to the surface of the electrode 2, but instead of applying the first resin to the electrode 2, the electrode pads 4 on the circuit board 3 and The first resin may be supplied in the vicinity thereof. The first resin supplied to the electrode pad 4 and the vicinity thereof by, for example, potting is attached to the surface of the electrode 2 before the electrode 2 is bonded to the electrode pad 4 and covers the surface of the electrode 2. The electrode pad 4 and the electrode 2 can be covered with the first resin in the state shown in FIG.

  According to the semiconductor device manufacturing method described above, the semiconductor device according to the present embodiment can be manufactured easily and at low cost.

  Since the inventor has created the semiconductor device according to the above-described embodiment and confirmed the effect of the present invention, the result will be described below.

Example 1
First, 100 parts by weight of a bisphenol F type epoxy (“EXA830CRP” manufactured by Dainippon Ink and Chemicals, Inc.), 15 parts by weight of triglycidyl ether of aminomethylphenol, an azine adducted imidazole curing agent (“Cureazole C11Z manufactured by Shikoku Kasei Co., Ltd.) -A ", melting point: about 184 ° C) 7.5 parts by weight, microcapsule type imidazole curing agent (" Novacure HX3721 "manufactured by Asahi Kasei Corporation), 65 parts by weight alumina powder (manufactured by Admatechs) The underfill agent was prepared by mixing and stirring.

  Next, as a semiconductor component, a semiconductor chip having a size of 8.5 × 8.5 mm and having about 120 gold bumps arranged in the periphery was prepared. In addition, a 40 × 40 mm BT resin substrate having the same electrode pad arrangement as the gold bumps of the semiconductor chip was prepared as a circuit substrate. Further, a silane coupling agent, for example, 3-mercaptopropyltrimethoxysilane was applied to a portion of the circuit board where the electrode pads were installed.

  Next, the above-described underfill agent was applied to the portion of the circuit board where the electrode pads were arranged, and was placed on the substrate stage of the bonder apparatus set at 60 ° C. After leaving for about 10 minutes, the gold bumps of the face-down semiconductor chip and the electrodes of the substrate were aligned, and the semiconductor component was ultrasonically bonded to the substrate. Thereafter, the semiconductor chip was held on the chip heating tool of the bonder device, and the underfill agent was cured at 180 ° C. for about 3 seconds to produce a flip chip type semiconductor device.

  As a result of testing the continuity of the joint using the lead wiring on the substrate side of the semiconductor device thus fabricated, it was confirmed that all the joints were conducting. Moreover, as a result of measuring the void area ratio inside the cured underfill agent using an ultrasonic microscope, the area of the void relative to the area of the underfill agent was 2% or less. Furthermore, a thermal cycle test (-65 ° C., 30 minutes to + 125 ° C., 30 minutes) of −65 ° C. to 125 ° C. is defined as one cycle, and a thermal cycle test is repeated 1000 cycles. Was + 5% or less.

(Comparative Example 1)
A flip chip type semiconductor device similar to that in Example 1 was produced without using the silane coupling agent of Example 1, and the conduction and void area ratio were measured in the same manner as in Example 1. As a result, it was found that there was a non-conductive junction. Moreover, the area of the void with respect to the area of an underfill agent was about 7%. It is considered that the non-conducting joint was caused because the wettability of the underfill agent to the electrode was reduced. Furthermore, a thermal cycle test (-65 ° C., 30 minutes to + 125 ° C., 30 minutes) of −65 ° C. to 125 ° C. is defined as one cycle, and a thermal cycle test is repeated 1000 cycles. Was + 7%.

  As described above, when the silane coupling agent is not used, the area of the void is about 7%. However, when the silane coupling agent according to the present invention is used, the void area is 2% or less, and voids are generated. It was confirmed that it was prevented. As a result of the thermal cycle test, when the silane coupling agent is not used, the connection resistance change rate of the substrate is + 7%, but when the silane coupling agent according to the present invention is used, the connection resistance change rate is + 5% or less. Met. Accordingly, it was confirmed that the semiconductor device using the silane coupling agent is less deteriorated due to the thermal cycle and the reliability is higher.

(Example 2)
A circuit board having 20 patterns of electrode arrangement similar to that of the substrate of Example 1 was prepared. 3-mercaptopropyltrimethoxysilane, which is a thiol compound, was applied to 20 positions on the circuit board where semiconductor chips were mounted. Furthermore, the underfill agent produced in Example 1 was applied to 20 positions on the circuit board where semiconductor components are mounted. Next, the above-mentioned underfill agent was applied to the portion where the electrode of the substrate was installed, and placed on the substrate stage of the bonder apparatus set at 60 ° C. After leaving for about 10 minutes, the gold bumps of the face-down semiconductor chip and the electrodes of the circuit board were aligned, and the semiconductor chip was ultrasonically bonded to the board. Thereafter, the semiconductor chip was held on the chip heating tool of the bonder device, and the underfill agent was cured at 180 ° C. for about 3 seconds to produce a flip chip type semiconductor device.

  Next, in the same manner as in Example 1, as a result of testing the continuity of the joint, continuity was confirmed for all the joints. The void area ratio was measured in the same manner as in Example 1. As a result, the void area relative to the area of the underfill agent was 2% or less in all samples. Furthermore, a thermal cycle test (-65 ° C., 30 minutes to + 125 ° C., 30 minutes) of −65 ° C. to 125 ° C. is defined as one cycle, and a thermal cycle test is repeated 1000 cycles. Was + 5% or less.

(Comparative Example 2)
A flip chip type semiconductor device similar to that of Example 2 was produced without using the thiol compound of Example 2, and the conduction and void area ratio were measured in the same manner as in Example 2. As a result, it was found that there was a non-conductive junction. Moreover, the area of the void with respect to the area of an underfill agent was about 7%. It is considered that the non-conducting joint was caused because the wettability of the underfill agent to the electrode was reduced. Furthermore, as a result of performing a thermal cycle test in which a temperature cycle test (−65 ° C., 30 minutes to + 125 ° C., 30 minutes) of −65 ° C. to 125 ° C. is defined as one cycle and this is repeated 1000 cycles, The rate of change was + 7%.

  As described above, when the thiol compound is not used, the void area is about 7%. However, when the thiol compound according to the present invention is used, the void area is 2% or less, and generation of voids is prevented. I was able to confirm. As a result of the thermal cycle test, when the thiol compound was not used, the connection resistance change rate of the substrate was + 7%, but when the thiol compound according to the present invention was used, the connection resistance change rate was + 5% or less. Accordingly, it was confirmed that the semiconductor device using the thiol compound is less deteriorated and has higher reliability due to the thermal cycle.

It is sectional drawing of the semiconductor device which shows the state which the void generate | occur | produced. It is sectional drawing of the semiconductor device by one Embodiment of this invention. FIG. 3 is a diagram showing a manufacturing process of the semiconductor device shown in FIG. 2.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Electrode 3 Circuit board 4 Electrode pad 5 Underfill (underfill agent: 2nd resin)
6 Void 7 Adhesive resin layer (first resin)

Claims (6)

A semiconductor device in which an electrode of a semiconductor chip is bonded to an electrode pad of a circuit board, and a gap between the semiconductor chip and the circuit board is sealed with a second resin layer,
A semiconductor device, wherein a first resin layer is provided in close contact with the electrode of the semiconductor chip, and the second resin layer is provided around the first resin layer. The semiconductor device according to claim 1,
The semiconductor device, wherein the first resin layer is made of a resin including a functional group that imparts wettability to the electrode of the semiconductor chip to the first resin layer. The semiconductor device according to claim 2,
The semiconductor device according to claim 1, wherein the functional group contained in the resin of the first resin layer is at least one of a thiol group, a disulfide group, an amino group, a hydroxyl group, and a carboxyl group. It is a semiconductor device given in any 1 paragraph among Claims 1-3,
The semiconductor device is characterized in that the electrode of the semiconductor chip is formed of at least one of gold, silver, copper, nickel, tin, or an alloy thereof. Supplying a first resin to an electrode of a semiconductor chip or an electrode pad of a circuit board, and forming a first resin layer covering the electrode or the electrode pad;
Supplying a second resin between the semiconductor chip and the circuit board;
Bonding the electrodes of the semiconductor chip and the electrode pads of the circuit board by pressure welding or ultrasonic bonding;
Curing the second resin. A method for manufacturing a semiconductor device, comprising: A method of manufacturing a semiconductor device according to claim 5,
The step of supplying the second resin is after the step of forming the first resin layer, and before the step of bonding, the second chip on the surface of the semiconductor chip on which the electrode is provided. A method for manufacturing a semiconductor device, comprising supplying a resin.

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