JP2009112999A - Film forming apparatus and film forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film forming apparatus capable of easily controlling a treating atmosphere, improving throughput and reducing manufacture cost of a product. <P>SOLUTION: The film forming apparatus has a stage (103) for mounting a substrate (100) so as to be movable, a droplet discharge part (113) arranged above the stage, a cover for covering the droplet discharge part and an inert gas line (107) connected to the cover. The cover (105) includes a ceiling part (105a) on which the droplet discharge part is attached and a wall part (105b) enclosing the surrounding of the droplet discharge part and the cover (105) is arranged to have a space between the substrate and the wall part. In the structure, the entering of outside air is prevented and a treating part of the substrate is purged with the inert gas by making the inert gas flow out from a gap between the cover and the substrate, time required to purge is reduced and further the quantity of the inert gas to be used is decreased. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a film forming apparatus and a film forming method, and more particularly to a film forming apparatus and a film forming method using a droplet discharge method.

  An ink jet device, which is an example of a droplet discharge device, is a device that pressurizes a pressure chamber with a piezoelectric element and discharges a liquid (solution) therein from a nozzle hole at the bottom of the pressure chamber. Such an ink jet apparatus is widely used not only in an ink jet printer but also industrially for discharging a material liquid when forming a constituent film of a display device or the like.

  In such industrial use, various liquids are discharged. Therefore, some of the solutions used react with oxygen in the air, for example, and the liquid quality deteriorates.

For example, in Patent Document 1 shown below, FIG. 5 shows a device in which a large space including an inkjet head (22) portion is covered with a device outer wall (cover 14).
JP 2003-84124 A

  The present inventors have studied a technique for preventing the quality and deterioration of the discharged liquid by discharging the ink jet apparatus in an inert gas atmosphere. However, since the apparatus disclosed in Patent Document 1 covers the entire apparatus, it takes time for gas purging (replacement of internal air) with an inert gas. Also, every time a processed substrate is taken out, outside air is mixed in the apparatus, and it takes time to re-purge. Furthermore, the amount of the inert gas to be used is increased and the cost is increased. Such a problem becomes more prominent as the substrate becomes larger.

  An object of this invention is to provide the film-forming apparatus and the film-forming method which can make control of process atmosphere easy. Another object of the present invention is to improve the throughput and reduce the manufacturing cost of the product by the apparatus and method.

  (1) A film forming apparatus according to the present invention is a film forming apparatus for forming a film on a substrate by discharging droplets onto the substrate, the stage for movably mounting the substrate, and the stage A liquid droplet discharge section disposed above the liquid droplet discharge section, a cover that covers the liquid droplet discharge section, and an inert gas line that is connected to the cover. A wall portion surrounding the droplet discharge portion connected to the ceiling portion and attached to the ceiling portion is included, and the cover is disposed so as to have a space between the substrate and the wall portion. .

  According to such a configuration, the inert gas is allowed to flow out from the gap between the cover and the substrate, so that the processing portion (inside the cover) on the substrate can be purged with the inert gas while preventing the outside air from entering. Therefore, the time required for purging can be reduced, and the amount of inert gas used can be reduced. In addition, droplets can be ejected in an inert gas atmosphere, and deterioration of the droplets can be prevented. Further, an inert gas flow is generated from the gas line to the outside of the cover, and drying of the droplets can be promoted.

  For example, the stage is configured to be able to move the substrate in a first direction or a second direction that intersects the first direction. According to such a configuration, it is possible to efficiently eject droplets with a simple configuration without largely moving the cover and the droplet ejection unit to which the gas line is connected.

  For example, the area of the substrate is larger than the area covered with the cover. If the cover is made relatively small with respect to the substrate, the amount of inert gas used can be reduced.

  For example, the stage is configured to be movable up and down. According to this configuration, the gap between the cover and the substrate can be adjusted.

  For example, the cover is configured to be able to move the substrate in a first direction or a second direction intersecting the first direction. In this manner, the droplet discharge unit side may be moved with respect to the substrate.

  For example, the cover is configured to be movable up and down. According to this configuration, the gap between the cover and the substrate can be adjusted.

  For example, the droplet discharge unit is mounted on the ceiling portion so as to be movable up and down. According to such a configuration, it is possible to adjust the distance between the substrate and the droplet discharge while making the gap between the cover and the substrate a desired distance.

For example, a flow rate adjusting unit is provided in the inert gas line. According to such a configuration, the flow rate of the inert gas can be adjusted, and the purge accuracy and the drying rate can be adjusted.
(2) A film forming method according to the present invention includes a step of mounting a substrate on a stage, and discharges droplets onto the substrate from a droplet discharge portion disposed on the stage and surrounded by a cover. A step of introducing an inert gas into the cover from an inert gas line connected to the cover, and allowing the inert gas to flow out from a space between the cover and the substrate, And a step of discharging droplets.

  According to such a method, the time required for purging can be reduced, and the amount of inert gas used can be reduced. In addition, droplets can be ejected in an inert gas atmosphere, and deterioration of the droplets can be prevented. Further, an inert gas flow is generated from the gas line to the outside of the cover, and drying of the droplets can be promoted.

  For example, the droplets are discharged while the substrate is moved relative to the droplet discharge device by the stage. According to such a method, it is possible to efficiently discharge droplets without largely moving the cover or the droplet discharge unit to which the gas line is connected.

  For example, the area of the substrate is larger than the area covered with the cover. Thus, the amount of inert gas to be used can be reduced by making the cover relatively small with respect to the substrate.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, the same or related code | symbol is attached | subjected to what has the same function, and the repeated description is abbreviate | omitted.

<Configuration of droplet discharge device>
1 to 3 are diagrams illustrating a droplet discharge device (a liquid application device, an ink jet device, a discharge device, and a film forming device) according to the present embodiment. 1 is a perspective view, FIG. 2 is a top view, and FIG. 3 is a cross-sectional view. The black arrows in FIGS. 1 to 3 indicate the flow of the inert gas, and the white arrows indicate the moving direction of the substrate 100.

  As shown in the figure, a droplet discharge apparatus 101 according to the present embodiment includes a substrate transfer stage (transfer unit) 103 and a cover (enclosure, cover, lid) in which an inkjet head (discharge unit, application unit) 113 is incorporated. A box (box) 105 having an opening on the lower side.

  The stage 103 mounts the substrate 100 so as to be movable in the X direction. For example, it has a roller and the substrate 100 is transported in the X direction (left and right direction in FIG. 2) by rotating the roller. The substrate 100 may be configured to be movable in the Y direction (the vertical direction in FIG. 2). The stage 103 also has a lifting / lowering means for the substrate 100. That is, the substrate 100 is configured to be movable in the Z direction (vertical direction). For example, the stage 103 itself may be configured to move up and down, or a plurality of bar-shaped lifting and lowering means may protrude from the inside of the stage 103 to move the substrate 100 up and down.

  The substrate 100 to be mounted is, for example, a glass substrate, and a functional liquid (droplet) is applied to the upper portion of the substrate 100, and the droplet is dried and solidified (for example, fired) to obtain a desired position on the substrate 100. A film is formed. d indicates a droplet after ejection (landing droplet).

  For example, a color filter (CF substrate) can be formed by discharging droplets to a plurality of regions partitioned in an array. In addition, a line-like film (wiring) may be formed by continuously discharging droplets so as to overlap each other. In this manner, films having various shapes can be formed by adjusting the ejection direction (scanning direction), the number of ejections, the ejection amount, and the like.

  The cover 105 has a wall 105 b that surrounds the ceiling plate 105 a and the inkjet head 113. Further, an inert gas line 107 is connected to the ceiling plate 105a of the cover 105, and an inert gas is introduced into the cover 105 (processing unit) from the inert gas supply means 109 via the inert gas line 107. . The inert gas supply means 109 is connected to a gas cylinder (not shown), and a flow rate adjusting unit (for example, an electromagnetic valve) 109a for adjusting the gas flow rate is incorporated therein. The tip of the inert gas line 107 is referred to as a gas introduction hole (injection hole, supply hole) 107a. In addition to the electromagnetic valve, a flow meter may be provided to adjust the gas flow rate. Furthermore, you may provide the controller which controls gas temperature.

  Here, the area of the stage (substrate 100) 103 is larger than the area covered by the cover 105. Further, the height of the stage 103 or the cover 105 is adjusted so that a gap (space) is provided between the cover 105 and the substrate (stage 103) 100. Thus, the inert gas introduced into the cover 105 from the inert gas line 107 is discharged from the gap.

  There are various internal configurations of the inkjet head 113, and an exemplary configuration is shown in FIG. FIG. 4 is an exploded perspective view illustrating a configuration example of the inkjet head 113. As shown in the figure, the ink jet head has a pressure chamber (cavity, recess) CA and a pressure element PE disposed on the pressure chamber CA.

  The pressure chamber CA has a bottom surface, a side wall, and an upper surface, the bottom surface is configured by the nozzle plate 1, the side wall is configured by the silicon substrate (flow path substrate) 3, and the upper surface is configured by the vibration plate 5. The silicon substrate 3 is provided with an opening, and this opening serves as a pressure chamber CA. Moreover, this opening part has opening area | region 11a, 11b, 11c, and 11b and 11c become a flow path of a liquid.

  A nozzle hole 1a is disposed on the bottom surface of the pressure chamber CA. One nozzle hole 1a is formed in the nozzle plate 1 for each of the plurality of pressure chambers CA.

The piezoelectric element PE is disposed above the pressure chamber CA, that is, above the diaphragm 5, and has a configuration in which a lower electrode 7a, a piezoelectric film (piezoelectric layer) 7b, and an upper electrode 7c are sequentially stacked from below. The piezoelectric film 7b is made of, for example, PZT (lead zirconate titanate, Pb (Zr _1-x Ti _x )). An external lead electrode 8 is disposed on the piezoelectric element PE (upper electrode 7c).

  A protective substrate (sealing resin) 9 is disposed on the piezoelectric element PE. The protective substrate 9 is provided with a recess 9a and opening regions 9b and 9c, and the piezoelectric element PE is disposed in the recess 9a. A compliance substrate or the like is provided on the protective substrate 9.

  Accordingly, the liquid is filled into the pressure chamber CA from the flow path (reservoir) 11c via the flow path 11b, and the pressure chamber CA is pressurized by the drive of the piezoelectric element PE and is discharged from the nozzle hole 1a of the nozzle hole.

  In FIG. 4, the nozzle holes 1a are provided at the end portions of the nozzle plate 1 for easy understanding of the drawing. However, the layout of the pressure chambers CA and the nozzle holes 1a can be appropriately changed. As shown, the nozzle hole 113 a may be disposed at a substantially central portion of the bottom surface of the inkjet head 113.

<Film Forming Method Using Droplet Discharge Device>
Next, a film forming method using the droplet discharge apparatus 101 of this embodiment will be described.

  First, as shown in FIG. 1, the substrate 100 is mounted on the stage 103, and the inkjet head 113 and the discharge position of the substrate 100 are aligned. At this time, for example, the height of the stage 103 is adjusted so that a certain gap is generated between the substrate 100 and the cover 105 (see FIG. 3). This adjustment may be performed by moving the cover 105 up and down.

  The height of the gap may be equal to or higher than the height of the discharged droplet (landing droplet) d. Further, the height of the gap can be appropriately changed according to the gas flow rate, for example. That is, the gas flow rate is adjusted according to the properties of the discharged solution and according to the drying speed of the discharged droplets. For example, when it is desired to increase the drying speed, the gap is increased and IN (inflow amount) and OUT (discharge amount) of the inert gas are adjusted. In order to increase the purge accuracy inside the cover 105, the IN (inflow amount) of the inert gas is increased in a state where the gap is reduced. In this case, the release rate of the inert gas from the gap increases, and the backflow of outside air (air) decreases. In other words, the purge accuracy is improved, that is, the concentration of outside air (air, oxygen) in the cover 105 can be kept low. The flow rate of the inert gas is controlled by the flow rate adjusting unit 109a.

In this way, for example, nitrogen (N ₂ ) flows into the cover 105 through the inert gas line 107 and is released from the gap, thereby filling (purging) the cover 105 with nitrogen. In addition to nitrogen, an inert gas such as Ar (argon) may be used.

  Next, droplets are discharged from the inkjet head 113 onto the substrate 100 while flowing nitrogen into the cover 107. Thereafter, the discharge is repeated while flowing nitrogen into the cover 107 and moving the substrate in the X direction.

  As described above, according to the present embodiment, the inkjet head 113 is surrounded and the inside thereof can be filled with the inert gas, so that the amount of the inert gas used can be reduced and the discharge solution can be altered. Can be prevented.

  That is, the amount of inert gas used can be reduced as compared with the case where the entire apparatus is covered. Further, the time for purging the inert gas can be shortened. As a result, the processing throughput of the substrate 100 can be improved. In addition, the manufacturing cost of the product can be reduced.

  Further, the discharge portion (processing portion) of the substrate 100 can be set to an inert gas atmosphere, and the reaction between the discharge solution and oxygen, moisture, or the like in the air can be reduced. In addition, since undesired reactants, volatile solvents, and the like are discharged to the outside of the cover 105 at any time and a clean inert gas is always flowed, film formation accuracy can be improved. In addition, since undesirable reactants and volatile solvents are reduced, clogging of the nozzle holes 113a can be reduced.

  Further, an inert gas flow is generated from the gas line 107 to the outside of the cover 105, and drying of the droplet d after discharge can be promoted. In addition, the flow rate of the inert gas can be adjusted, and the drying rate of the droplets after ejection can be controlled.

  Furthermore, when the entire apparatus is covered, the size of the substrate that can be processed is limited, but according to the present embodiment, it is possible to cope with various substrates.

In the above embodiment, various applications are possible. 5-11 is a figure which shows the other structural example of this Embodiment. Below, the structural example is demonstrated.
<Configuration example 1>
In the above embodiment (FIGS. 1 to 3), the discharge is performed while moving the substrate 100 in the X direction. However, as shown in FIG. 5, the discharge is performed while the substrate 100 is moved in the X direction and the Y direction. You may go. 5 is an example of the scanning route of the substrate 100. As described above, the area of the cover 105 with respect to the substrate 100 can be reduced by moving the substrate 100 in the X direction and the Y direction. In other words, a larger substrate 100 can be processed. For example, the cover 105 has a size of about 4 cm in length, 3 cm in width, and about 1 cm in height. For example, a substrate having a size of 55 cm in length and 200 cm in width can be processed.
<Configuration example 2>
In the above embodiment (FIGS. 1 to 3), one inkjet head 113 is used. However, as shown in FIG. 6, a plurality of inkjet heads 113 may be incorporated, and a cover 105 may be provided for each. Note that the number of inkjet heads 113 used may be three or more. Thus, the throughput can be further improved by increasing the number of heads.
<Configuration example 3>
In the above embodiment (FIGS. 1 to 3), the ink jet head 113 in which the nozzle holes 113a are provided in a line is used. However, as shown in FIG. (2 rows × 6 pieces) may be provided. Thus, the number and arrangement of nozzle holes can be changed as appropriate.
<Configuration example 4>
Moreover, in the said embodiment (FIGS. 1-3), although the board | substrate 100 is moved with respect to the cover (inkjet head 113) 105, as shown in FIG. 8, the inkjet head 113 itself may be moved. . For example, the inkjet head 113 may be moved using a flexible inert gas line (such as a rubber tube).

  However, if the movement range of the head 113 is increased, the handling of the inert gas line 107 becomes complicated. In addition, when a plurality of heads 113 are used, cross-linking between the inert gas lines 107 may occur, and thus the configuration in which the substrate 100 side is moved as shown in FIG. 1 is simpler.

Further, as in the above embodiment (FIGS. 1 to 3), the substrate 100 is moved with respect to the cover (inkjet head 113) 105, and further, the inkjet head 113 can be moved as much as possible (for example, about 1 cm). You may comprise as follows. That is, the scanning range of the cover is smaller than the scanning range (movement distance) of the substrate by the stage, but is configured to be able to scan to some extent. According to such a configuration, it is easy to finely adjust the discharge position. Further, when discharging continuously (for example, when forming a line-shaped pattern (wiring), etc.), it is easier to control by moving the small and light head side.
<Configuration example 5>
Further, as shown in FIG. 9, the inkjet head 113 may be incorporated in the cover 105 so as to be vertically movable. According to such a configuration, the nozzle hole 113a of the inkjet head 113 can be moved up and down, and the height of the nozzle hole 113a can be adjusted according to the discharge liquid and the discharge amount. Further, the gap height (H1) between the cover 105 and the substrate 100 and the height (discharge position) H2 of the nozzle hole 113a can be controlled independently. Therefore, it is possible to ensure the gap height H1 in consideration of the processing conditions (purge accuracy) and the drying speed while setting the height H2 of the nozzle hole 113a according to the discharge conditions.
<Configuration example 6>
In the above-described embodiment, the connection location between the cover 105 and the inert gas line 107 is 2 rows × 5 locations, but the present invention is not limited to this, and various modifications are possible.

  Moreover, as shown in FIG. 10, you may provide the baffle plate 120a inside a cover. That is, the substantially triangular prism-shaped rectifying plate 120a is arranged on the outer periphery of the cover 105 so as to extend in the X direction with the corners on the side surfaces as apexes (FIG. 10A). In this case, as shown in FIG. 10B, the inert gas is controlled in two directions by the rectifying plate 120a (triangular prism). That is, the air is rectified to the outside of the cover 105 and is divided into a gas that becomes an air curtain (prevents intrusion of outside air) and a gas that is rectified to the inside of the cover 105 and becomes a filling gas. The flow direction of the inert gas inside the cover 105 may be adjusted by such a rectifying plate 120a.

  Further, an intake pipe 130 may be disposed at the center of the cover 105 to suck (collect) the inert gas. According to such a configuration, even when an expensive inert gas (for example, Ar or the like) is used, it can be reused by recovery and purification.

  In FIG. 10, the current plate is arranged in the X direction, but may be arranged in the Y direction.

  Further, as shown in FIG. 11, the tip of the inert gas line 107 is divided into two directions (the bifurcated holes 107b and 107c are provided), or the branch plate 120b is provided inside the inert gas line 107, thereby covering the cover. The gas flow to the outside of 105 and the gas flow to the inside of the cover 105 may be adjusted.

  In this way, adjustment is performed so that the inert gas released from the inert gas line 107 is separated into the first gas that releases gas toward the outside of the cover 105 and the second gas that discharges gas toward the inside of the cover 105. A portion (rectifying plate, branch plate, bifurcated hole) may be provided.

  In the above embodiment, the piezoelectric inkjet head has been described as an example. However, the present invention is not limited to this, and for example, an electrostatic inkjet head or the like may be used.

  Further, in the above embodiment, the example of forming a color filter of a liquid crystal device has been described as an example of processing. However, the device and the film forming method of the above embodiment can also be applied to the discharge of alignment film materials, liquid crystals, and the like. It is. In addition to the liquid crystal device, for example, the present invention can also be applied to ejection of liquid electrode materials such as an organic EL (Electro Luminescence) device and a surface-conduction electron emission device. Further, the present invention can also be applied to the discharge of bioorganic materials used for the production of biochips. Of course, the present invention can also be applied to an ink jet printer. As described above, the present invention can be applied to a wide range of fields, but is suitable for use in the industrial droplet discharge apparatus described above. In particular, it is suitable for use as a discharge liquid for discharging an organic solvent or an organic EL (electroluminescence) material that easily changes in quality when exposed to air.

  In addition, the examples and application examples described through the above-described embodiment can be used in appropriate combination depending on the application, or can be used with modifications or improvements, and the present invention is limited to the description of the above-described embodiment. Is not to be done.

It is a perspective view which shows the droplet discharge apparatus of this Embodiment. It is a top view which shows the droplet discharge apparatus of this Embodiment. It is sectional drawing which shows the droplet discharge apparatus of this Embodiment. It is a disassembled perspective view which shows the structural example of an inkjet head. It is a top view which shows the other structural example of the droplet discharge apparatus of this Embodiment. It is a top view which shows the other structural example of the droplet discharge apparatus of this Embodiment. It is a top view which shows the other structural example of the droplet discharge apparatus of this Embodiment. It is a top view which shows the other structural example of the droplet discharge apparatus of this Embodiment. It is sectional drawing which shows the other structural example of the droplet discharge apparatus of this Embodiment. It is a figure which shows the other structural example of the droplet discharge apparatus of this Embodiment. It is a figure which shows the other structural example of the droplet discharge apparatus of this Embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Nozzle plate, 1a ... Nozzle hole, 3 ... Silicon substrate, 5 ... Diaphragm, 7a ... Lower electrode, 7b ... Piezoelectric film, 7c ... Upper electrode, 9 ... Protective substrate, 9a ... Recessed part, 9b, 9c ... Opening 11a, 11b, 11c ... opening region, 100 ... substrate, 101 ... droplet discharge device, 103 ... stage, 113 ... inkjet head, 113a ... nozzle hole, 105 ... cover, 105a ... ceiling board, 105b ... wall, 107 ... inert gas line 107a ... gas introduction hole 107b, 107c ... bifurcated hole 109 ... inert gas supply means 109a ... flow rate adjusting unit 120a ... rectifier plate 120b ... branch valve CA ... pressure chamber PE Pressure element

Claims (11)

A film forming apparatus for forming a film on a substrate by discharging droplets on the substrate,
A stage on which the substrate is movably mounted;
A droplet discharge unit disposed above the stage;
A cover that covers the droplet discharge section;
An inert gas line connected to the cover;
Have
The cover includes a wall portion that attaches the droplet discharge portion to a ceiling portion of the cover and surrounds the droplet discharge portion connected to the ceiling portion,
The film forming apparatus, wherein the cover is arranged to have a space between the substrate and the wall portion.   The film forming apparatus according to claim 1, wherein the stage is configured to be able to move the substrate in a first direction or a second direction intersecting the first direction.   The film forming apparatus according to claim 1, wherein an area of the substrate is larger than an area covered with the cover.   The film forming apparatus according to claim 1, wherein the stage is configured to be movable up and down.   5. The film forming apparatus according to claim 1, wherein the cover is configured to be able to move the substrate in a first direction or a second direction intersecting the first direction. 6.   The film forming apparatus according to claim 1, wherein the cover is configured to be movable up and down.   The film forming apparatus according to claim 1, wherein the droplet discharge unit is mounted on the ceiling portion so as to be vertically movable.   The film forming apparatus according to claim 1, wherein a flow rate adjusting unit is provided in the inert gas line. Mounting the substrate on the stage;
A step of discharging droplets onto the substrate from a droplet discharge unit disposed above the stage and surrounded by a cover;
An inert gas is introduced into the cover from an inert gas line connected to the cover, and droplets are ejected onto the substrate while allowing the inert gas to flow out of the space between the cover and the substrate. And a process of
A film forming method comprising:   The film forming method according to claim 9, wherein the droplets are discharged while the substrate is moved relative to the droplet discharge device by the stage.   The film forming method according to claim 9, wherein an area of the substrate is larger than an area covered with the cover.

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