JP2009111642A - 微細凹部形成方法およびコンデンサマイクロホンの製造方法 - Google Patents
微細凹部形成方法およびコンデンサマイクロホンの製造方法 Download PDFInfo
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- JP2009111642A JP2009111642A JP2007280866A JP2007280866A JP2009111642A JP 2009111642 A JP2009111642 A JP 2009111642A JP 2007280866 A JP2007280866 A JP 2007280866A JP 2007280866 A JP2007280866 A JP 2007280866A JP 2009111642 A JP2009111642 A JP 2009111642A
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- 239000002344 surface layer Substances 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 9
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 239000007864 aqueous solution Substances 0.000 claims description 11
- 239000012670 alkaline solution Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 description 176
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 230000003071 parasitic effect Effects 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000000347 anisotropic wet etching Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013256 coordination polymer Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
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- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 2
- 238000009623 Bosch process Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000001763 2-hydroxyethyl(trimethyl)azanium Substances 0.000 description 1
- 235000019743 Choline chloride Nutrition 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229960003178 choline chloride Drugs 0.000 description 1
- SGMZJAMFUVOLNK-UHFFFAOYSA-M choline chloride Chemical compound [Cl-].C[N+](C)(C)CCO SGMZJAMFUVOLNK-UHFFFAOYSA-M 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 238000012217 deletion Methods 0.000 description 1
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- 238000001312 dry etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
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- 239000012528 membrane Substances 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007280866A JP2009111642A (ja) | 2007-10-29 | 2007-10-29 | 微細凹部形成方法およびコンデンサマイクロホンの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007280866A JP2009111642A (ja) | 2007-10-29 | 2007-10-29 | 微細凹部形成方法およびコンデンサマイクロホンの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009111642A true JP2009111642A (ja) | 2009-05-21 |
| JP2009111642A5 JP2009111642A5 (enExample) | 2010-09-02 |
Family
ID=40779669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007280866A Pending JP2009111642A (ja) | 2007-10-29 | 2007-10-29 | 微細凹部形成方法およびコンデンサマイクロホンの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009111642A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102328899A (zh) * | 2011-08-05 | 2012-01-25 | 上海先进半导体制造股份有限公司 | 不同深度腔体的制造方法 |
| TWI486069B (zh) * | 2010-05-18 | 2015-05-21 | Taiwan Carol Electronics Co Ltd | Capacitive microphone process |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002223499A (ja) * | 2001-01-29 | 2002-08-09 | Seiko Epson Corp | コンデンサマイクロホンおよびその製造方法および音声入力装置 |
| JP2006062148A (ja) * | 2004-08-25 | 2006-03-09 | Fuji Xerox Co Ltd | シリコン構造体製造方法、モールド金型製造方法、シリコン構造体、インクジェット記録ヘッド、画像形成装置、及び、半導体装置 |
-
2007
- 2007-10-29 JP JP2007280866A patent/JP2009111642A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002223499A (ja) * | 2001-01-29 | 2002-08-09 | Seiko Epson Corp | コンデンサマイクロホンおよびその製造方法および音声入力装置 |
| JP2006062148A (ja) * | 2004-08-25 | 2006-03-09 | Fuji Xerox Co Ltd | シリコン構造体製造方法、モールド金型製造方法、シリコン構造体、インクジェット記録ヘッド、画像形成装置、及び、半導体装置 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI486069B (zh) * | 2010-05-18 | 2015-05-21 | Taiwan Carol Electronics Co Ltd | Capacitive microphone process |
| CN102328899A (zh) * | 2011-08-05 | 2012-01-25 | 上海先进半导体制造股份有限公司 | 不同深度腔体的制造方法 |
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