JP2009110989A - Manufacturing method of circuit board with metal fittings - Google Patents

Manufacturing method of circuit board with metal fittings Download PDF

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JP2009110989A
JP2009110989A JP2007278474A JP2007278474A JP2009110989A JP 2009110989 A JP2009110989 A JP 2009110989A JP 2007278474 A JP2007278474 A JP 2007278474A JP 2007278474 A JP2007278474 A JP 2007278474A JP 2009110989 A JP2009110989 A JP 2009110989A
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ceramic
metal
substrate
ceramic substrate
metal plate
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JP5052290B2 (en
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Shunichi Yatsuyama
俊一 八山
Kiyoshi Yakubo
清 八久保
Sadakatsu Yoshida
定功 吉田
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Kyocera Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method suitable for obtaining a circuit board with metal fittings such that a terminal projecting from a ceramic substrate has neither deformation nor peeling. <P>SOLUTION: Disclosed is the manufacturing method of the circuit board 6 with metal fittings with the terminal including the stages of: preparing the ceramic substrate 1 and a ceramic support substrate 2; arranging the ceramic substrate 1 and ceramic support substrate 2 side by side, disposing metal plates 4 above and below them so that the metal plate 4 is sandwiched between them, and bonding the metal plates 4 to both principal surfaces of the ceramic substrate 1 and ceramic support substrate 2; forming the metal fittings by etching the bonded metal plates 4 so that the metal plate 4 bonded to one principal surface of the ceramic substrate 1 projects from the external side of the ceramic substrate 1; and removing the ceramic support substrate 2. Consequently, a metal fittings portion (terminal) of a metal circuit board 4a does not deform and the bonding reliability between the metal circuit board 4a and ceramic substrate 1 does not decreases either. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、パワー半導体モジュールに好適な端子等の金具付き回路基板の製造方法に関する。   The present invention relates to a method of manufacturing a circuit board with metal fittings such as terminals suitable for a power semiconductor module.

近年、セラミック基板の表裏面に金属回路や金属放熱板を形成してなる回路基板が、パワー半導体モジュール用の基板として大電流を流す必要のある電車や電気自動車で使用されており、回路基板の金属回路上に半田付けやボンディングワイヤ等で半導体素子や受動素子が電気的に接続されることでパワー半導体モジュール化されている。また、金属回路には外部回路と接続するための端子が、セラミック基板の外辺から突出するように半田付けや超音波ボンディング等で接合されている。このようなパワー半導体モジュールは、一般的に金属放熱板からの放熱とともに、端子から外部回路への放熱が行なわれており、端子からの放熱性はパワー半導体モジュールの放熱性にとって重要な因子のひとつである。   In recent years, circuit boards formed by forming metal circuits and metal heat sinks on the front and back surfaces of ceramic substrates have been used in trains and electric vehicles that require large currents to flow as power semiconductor module boards. A power semiconductor module is formed by electrically connecting a semiconductor element and a passive element on a metal circuit by soldering, bonding wires, or the like. In addition, a terminal for connecting to an external circuit is joined to the metal circuit by soldering, ultrasonic bonding, or the like so as to protrude from the outer side of the ceramic substrate. In such power semiconductor modules, heat dissipation from the metal heat sink and heat dissipation from the terminal to the external circuit are generally performed, and the heat dissipation from the terminal is one of the important factors for the heat dissipation of the power semiconductor module. It is.

このような端子等の金具付き回路基板の製造方法において、半田付けで端子を接合した場合は、金属板回路を熱伝導性の良い銅やアルミニウムで形成し、端子も熱伝導の良い材質で形成したとしても、一般的にこれらより熱伝導性の劣る半田を間に挟むことで端子からの放熱性が低下し、パワー半導体モジュール全体の放熱性を低下させてしまう。また、端子の電極への接合を超音波ボンディングで接合を行なった場合は、端子と電極とが重なる面積に対して実際に接合される面積が小さくなりやすいので放熱性が低下しやすく、また接合面積を増やすために強力な超音波を使用したり、加熱温度を高めたりすると、セラミック基板と金属回路板との接合部に超音波による急激な応力や急激な温度変化による応力が加わることで、接合部に剥離やクラックが発生し易くなり接合部の強度が低下しやすい傾向がある。   In such a method of manufacturing a circuit board with metal fittings such as terminals, when the terminals are joined by soldering, the metal plate circuit is formed of copper or aluminum having good thermal conductivity, and the terminals are also formed of a material having good thermal conductivity. Even if it does, heat dissipation from a terminal will fall by pinching solder with inferior thermal conductivity than these in general, and will reduce the heat dissipation of the whole power semiconductor module. In addition, when bonding the terminal to the electrode by ultrasonic bonding, the area where the terminal and the electrode overlap with each other tends to be smaller, so the heat dissipation is likely to decrease. When strong ultrasonic waves are used to increase the area, or when the heating temperature is increased, sudden stress due to ultrasonic waves or stress due to rapid temperature changes is added to the joint between the ceramic substrate and the metal circuit board, There is a tendency that peeling and cracking are likely to occur at the joint and the strength of the joint is likely to decrease.

そのため、セラミック基板の外辺から突出した端子を金属回路板と一体的に形成する方法として、セラミック基板の少なくとも1辺から突出した金属板をセラミック基板に接合して、エッチングによりセラミック基板から突出した形状の端子を形成する方法(A法)や、図4(a)〜(e)にそれぞれ工程毎の斜視図で示すように、セラミック基板11の両主面にセラミック基板11と同程度の大きさの金属板14をろう材13等により接合してエッチングすることにより、セラミック基板11の一方主面に端子付き金属回路板14aを、他方主面に金属放熱板14bを形成した後、セラミック基板11の端部11bを切除することにより、端子をセラミック基板11の外辺から突出させるという方法(B法)が提案されている(例えば、特許文献1を参照。)。
特開2003−218268号公報
Therefore, as a method of integrally forming the terminal protruding from the outer side of the ceramic substrate with the metal circuit board, the metal plate protruding from at least one side of the ceramic substrate is joined to the ceramic substrate and protruded from the ceramic substrate by etching. As shown in the perspective view for each process in the method (A method) for forming the shaped terminal and FIGS. 4 (a) to 4 (e), both main surfaces of the ceramic substrate 11 are as large as the ceramic substrate 11. After forming the metal circuit board 14a with terminals on one main surface of the ceramic substrate 11 and the metal heat radiating plate 14b on the other main surface by joining and etching the metal plate 14 with the brazing material 13 or the like, the ceramic substrate There has been proposed a method (Method B) in which the terminal is protruded from the outer side of the ceramic substrate 11 by cutting out the end portion 11b of the eleven (see, for example, Patent Document 1).
JP 2003-218268 A

しかしながら、従来のA法の場合は、接合後のエッチング液のシャワー圧によってセラミック基板から突出した部分が曲がってしまうという問題点がある。   However, in the case of the conventional method A, there is a problem that a portion protruding from the ceramic substrate is bent by the shower pressure of the etching solution after bonding.

従来のB法においては、セラミック基板から突出した部分は、その下方のセラミック基板11の端部11bにより支持されるので、このような変形の問題はない。しかしながら、セラミック基板11の一方主面に突出した端子が接合される場合は、他方主面側からダイシングでセラミック基板11の端部11bを切除、またはセラミック基板11に形成された分割溝11aに沿って他方主面側へ折り曲げてセラミック基板の端部11aを切除する。ダイシングで切除する場合は、端子付き金属回路14aのセラミック基板11側の面とセラミック基板11の一方主面との間にはこれらを接合するためのろう材厚み程度の小さい間隔しかないので、切断時のダイシングソーの高さを精密に調整しないと、ダイシングソーで端子に傷をつけてしまい、端子にバリ状の鋭利な突起が発生してしまう。このような突起を有する端子に高電圧の電流を流すとそこから放電しやすくなり、金属回路14a・14a間の絶縁性における耐電圧が低下するという問題点がある。また、バリを除去したとしてもこの部分の厚みが他の部分より薄いので、この部分から不用意に折れ曲がりやすくなってしまう。また、分割溝11aに沿って他方主面側へ折り曲げて切除する場合は、端子とセラミック基板11との接合部が折り曲げ部に近いと、折り曲げ時に端子付き金属回路板14aとセラミック基板11との接合部に応力が加わってクラックが入る場合があり、端子付き金属回路板14aの接合信頼性が低下するという問題点がある。そのために端子付き金属回路板14aのセラミック基板11との接合部を折り曲げ部から離してセラミック基板11の内側に形成する必要があり、端子のセラミック基板11の外辺からの突出長さを同じにしようとするとその分だけ回路基板16が大きくなってしまうものであった。   In the conventional method B, the portion protruding from the ceramic substrate is supported by the end portion 11b of the ceramic substrate 11 therebelow, so there is no problem of such deformation. However, when a terminal protruding on one main surface of the ceramic substrate 11 is joined, the end portion 11b of the ceramic substrate 11 is cut by dicing from the other main surface side, or along the dividing groove 11a formed on the ceramic substrate 11. Then, the end portion 11a of the ceramic substrate is cut off by bending toward the other main surface. When cutting by dicing, there is only a small gap between the surface of the metal circuit with terminal 14a on the side of the ceramic substrate 11 and one main surface of the ceramic substrate 11 that is about the thickness of the brazing material. If the height of the dicing saw is not precisely adjusted, the terminal is damaged by the dicing saw, and a burr-shaped sharp protrusion is generated on the terminal. When a high-voltage current is passed through a terminal having such a protrusion, it is easy to discharge from the terminal, and there is a problem that the withstand voltage in the insulation between the metal circuits 14a and 14a is lowered. Moreover, even if the burr is removed, the thickness of this portion is thinner than the other portions, so that it becomes easy to bend from this portion carelessly. Further, in the case of cutting along the dividing groove 11a to the other main surface side, if the joint between the terminal and the ceramic substrate 11 is close to the bent portion, the metal circuit board with terminal 14a and the ceramic substrate 11 are bent at the time of bending. In some cases, stress is applied to the joint and cracks may occur, and there is a problem in that the joint reliability of the metal circuit board with terminal 14a is lowered. Therefore, it is necessary to form the joint portion of the terminal-attached metal circuit board 14a with the ceramic substrate 11 away from the bent portion and to the inside of the ceramic substrate 11, and to make the protruding length of the terminal from the outer side of the ceramic substrate 11 the same. Attempting to do so would increase the circuit board 16 accordingly.

また、両主面に突出した端子付き金属回路板14aを設けたり、一方主面の放熱板14bもセラミック基板11の外辺から突出させたりする場合もある。この場合は、従来のB法では、ダイシングにより切断しようとする線11aと突出する端子や放熱板14bとが交差するので端子や放熱板を切断することなしにセラミック基板の端部11bを切除することはできない。そのため、分割溝11aに沿って折り曲げて切除することとなるが、端子や放熱板14bのセラミック基板11側の面とセラミック基板11の一方主面との間はこれらを接合するためのろう材厚み程度の小さい間隔しかないので、セラミック基板11の端部11bを切除するために折り曲げると、突出した端子や放熱板に当たってしまうので端子や放熱板が曲がってしまったり、端子付き金属回路板14aや放熱板14bとセラミック基板11との接合部に大きな応力が加わって端子付き金属回路板14aや放熱板14bが剥がれてしまったりするという問題点がある。   In some cases, a metal circuit board 14a with terminals protruding on both main surfaces is provided, or the heat radiating plate 14b on one main surface is protruded from the outer side of the ceramic substrate 11. In this case, in the conventional method B, the line 11a to be cut by dicing intersects the protruding terminal and the heat sink 14b, so the end 11b of the ceramic substrate is cut off without cutting the terminal and the heat sink. It is not possible. For this reason, it is cut along the dividing groove 11a, but the brazing material thickness for joining the terminals and the heat sink 14b on the ceramic substrate 11 side and one main surface of the ceramic substrate 11 is cut. Since there is only a small interval, if the end 11b of the ceramic substrate 11 is bent so as to be cut off, it will hit the protruding terminal or the heat sink, so that the terminal or the heat sink may be bent, the metal circuit board 14a with a terminal or the heat dissipation There is a problem that a large stress is applied to the joint between the plate 14b and the ceramic substrate 11 and the metal circuit board 14a with terminal and the heat sink 14b are peeled off.

本発明は、上記問題点に鑑みて案出されたものであり、その目的は、セラミック基板から突出した端子に変形や剥がれのない金具付き回路基板を得るのに好適な金具付き回路基板の製造方法を提供することである。   The present invention has been devised in view of the above problems, and its purpose is to produce a circuit board with metal fittings suitable for obtaining a circuit board with metal fittings in which terminals protruding from the ceramic substrate are not deformed or peeled off. Is to provide a method.

本発明の金具付き回路基板の製造方法は、セラミック基板およびセラミック支持基板を準備する工程と、前記セラミック基板および前記セラミック支持基板を横に並べ、これらを挟むように金属板を上下に配置して、前記セラミック基板および前記セラミック支持基板の両主面に前記金属板を接合する工程と、前記セラミック基板の少なくとも一方主面に接合された前記金属板が前記セラミック基板の外辺から突出した形状となるように、接合された前記金属板をエッチング加工して金具を形成する工程と、前記セラミック支持基板を除去する工程とを含むことを特徴とするものである。   The method of manufacturing a circuit board with a metal fitting according to the present invention includes a step of preparing a ceramic substrate and a ceramic support substrate, and the ceramic substrate and the ceramic support substrate are arranged side by side, and metal plates are arranged vertically so as to sandwich them. Bonding the metal plate to both main surfaces of the ceramic substrate and the ceramic support substrate; and a shape in which the metal plate bonded to at least one main surface of the ceramic substrate protrudes from the outer side of the ceramic substrate; As described above, the method includes a step of etching the joined metal plates to form a metal fitting, and a step of removing the ceramic support substrate.

本発明の金具付き回路基板の製造方法は、上記製造方法において、一方主面側の前記セラミック基板と前記金属板との接合部から前記セラミック支持基板と前記金属板との接合部までの長さと、他方主面側の前記セラミック基板と前記金属板との接合部から前記セラミック支持基板と前記金属板との接合部までの長さとを同じにすることを特徴とするものである。   The method for manufacturing a circuit board with a metal fitting according to the present invention is the above manufacturing method, wherein the length from the joint portion between the ceramic substrate and the metal plate on one main surface side to the joint portion between the ceramic support substrate and the metal plate is The length from the joint portion between the ceramic substrate and the metal plate on the other main surface side to the joint portion between the ceramic support substrate and the metal plate is the same.

本発明の金具付き回路基板の製造方法は、上記製造方法において、前記金属板を接合する工程と前記金属板をエッチング加工して金具を形成する工程との間に、前記セラミック基板と前記セラミック支持基板との間を樹脂で充填する工程を含むことを特徴とするものである。   The method of manufacturing a circuit board with a metal fitting according to the present invention is the above manufacturing method, wherein the ceramic substrate and the ceramic support are provided between the step of joining the metal plates and the step of etching the metal plate to form the metal fittings. It includes a step of filling a space between the substrate and the resin.

本発明の金具付き回路基板の製造方法は、上記製造方法において、前記金属板をエッチング加工して金具を形成する工程において、前記セラミック基板および前記セラミック支持基板の両方に接合された接続金属板を形成し、しかる後、該接続金属板を取り除く工程を含むことを特徴とするものである。   The method for manufacturing a circuit board with a metal fitting according to the present invention includes a connecting metal plate bonded to both the ceramic substrate and the ceramic support substrate in the manufacturing method, wherein the metal plate is etched to form a metal fitting. Forming, and then removing the connecting metal plate.

本発明の端子付き金具付き回路基板の製造方法によれば、横に並べたセラミック基板およびセラミック支持基板を上下に挟むように金属板を接合する工程と、セラミック基板の少なくとも一方主面に接合された金属板がセラミック基板の外辺から突出した形状となるように、接合された金属板をエッチング加工して金具を形成する工程とを含むことから、予め分割されたセラミック基板を用いているのでセラミック基板を切断することなしに、セラミック支持基板を取り除くことで容易に端子等の金具をセラミック基板の外辺から突出させることができる。したがって、セラミック基板を切除するのにダイシングや折り曲げを行なわないことで、金具を傷つけたり、金具や金具とセラミック基板との接合部に力を加えたりすることがないので、金具付きの高電圧大電流を流す金属回路を高密度に形成しても金属回路間の耐電圧が低下することがなく、金具が変形することや金具とセラミック基板との接合信頼性が低下することがない。また、金具とセラミック基板との接合部をセラミック基板の端部に形成することができるので、セラミック基板および回路基板を小型化することができる。   According to the method for manufacturing a circuit board with metal fittings with a terminal according to the present invention, a step of bonding a metal plate so as to sandwich a ceramic substrate and a ceramic support substrate arranged side by side, and bonding to at least one main surface of the ceramic substrate. Since the metal plate includes a step of etching the joined metal plate to form a metal fitting so that the metal plate has a shape protruding from the outer side of the ceramic substrate, a pre-divided ceramic substrate is used. Without cutting the ceramic substrate, the metal support such as a terminal can be easily protruded from the outer side of the ceramic substrate by removing the ceramic support substrate. Therefore, by not performing dicing or bending when cutting the ceramic substrate, the metal fittings are not damaged, and no force is applied to the metal fittings or the joint between the metal fittings and the ceramic substrate. Even if a metal circuit for passing a current is formed at a high density, the withstand voltage between the metal circuits is not lowered, and the metal fitting is not deformed and the bonding reliability between the metal fitting and the ceramic substrate is not lowered. In addition, since the joint between the metal fitting and the ceramic substrate can be formed at the end of the ceramic substrate, the ceramic substrate and the circuit substrate can be reduced in size.

また、本発明の金具付き回路基板の製造方法によれば、一方主面側のセラミック基板と金属板との接合部からセラミック支持基板と金属板との接合部までの長さと、他方主面側のセラミック基板と金属板との接合部からセラミック支持基板と金属板との接合部までの長さとを同じにするときには、接合後に冷却した際に、金属板のセラミック基板およびセラミック支持基板に拘束されることなく収縮する部分の長さが2つのセラミック基板の上下で同じになるので、上下で金属板の収縮量が同じになり、収縮差によりセラミック基板から突出した金属板が変形することがない。結果として、セラミック基板の外辺から突出した端子等の金具の寸法精度がより優れた回路基板を製造することができる。   In addition, according to the method for manufacturing a circuit board with a metal fitting of the present invention, the length from the joint portion between the ceramic substrate and the metal plate on one main surface side to the joint portion between the ceramic support substrate and the metal plate, and the other main surface side When the length from the joint between the ceramic substrate and the metal plate to the joint between the ceramic support substrate and the metal plate is the same, the metal plate is restrained by the ceramic substrate and the ceramic support substrate when cooled after joining. Since the length of the portion that shrinks without any difference between the upper and lower sides of the two ceramic substrates, the amount of shrinkage of the metal plate is the same at the upper and lower sides, and the metal plate protruding from the ceramic substrate is not deformed due to the difference in shrinkage. . As a result, it is possible to manufacture a circuit board that is more excellent in dimensional accuracy of metal fittings such as terminals protruding from the outer side of the ceramic board.

また、本発明の金具付き回路基板の製造方法によれば、金属板を接合する工程と金属板をエッチング加工して金具を形成する工程との間に、セラミック基板とセラミック支持基板との間を樹脂で充填する工程を含むときには、セラミック基板とセラミック支持基板との間の隙間から金具の裏面にエッチング液が回りこむことを防ぐので、金具の寸法精度を高めることができるようになるとともに、金具の一部が薄くなってしまうことによる部分的な強度低下や電気抵抗増大等の不具合を防ぐことができる。   Further, according to the method for manufacturing a circuit board with a metal fitting of the present invention, between the step of joining the metal plate and the step of etching the metal plate to form the metal fitting, between the ceramic substrate and the ceramic support substrate. When including the step of filling with resin, the etching liquid is prevented from flowing into the back surface of the metal fitting from the gap between the ceramic substrate and the ceramic support substrate, so that the dimensional accuracy of the metal fitting can be improved and the metal fitting It is possible to prevent problems such as a partial decrease in strength and an increase in electrical resistance due to a part of the film becoming thinner.

また、本発明の金具付き回路基板の製造方法によれば、セラミック基板およびセラミック支持基板の両方に接合された接続金属板を形成し、しかる後、この接続金属板をセラミック支持基板とともに除去するときには、エッチング加工により金具とセラミック支持基板とが分離された後でも金具の下面にセラミック支持基板が固定されているので、エッチング加工のシャワー圧や搬送時のがたつき等による金具の変形を抑えることができる。   Further, according to the method for manufacturing a circuit board with a metal fitting of the present invention, when the connection metal plate joined to both the ceramic substrate and the ceramic support substrate is formed and then the connection metal plate is removed together with the ceramic support substrate. Since the ceramic support substrate is fixed to the lower surface of the metal fitting even after the metal fitting and the ceramic support substrate are separated by etching processing, the deformation of the metal fitting due to the shower pressure of etching processing or rattling during transportation is suppressed. Can do.

次に本発明の金具付き回路基板の製造方法について、添付の図面を参照しつつ詳細に説明する。   Next, the manufacturing method of the circuit board with metal fittings of this invention is demonstrated in detail, referring attached drawing.

図1(a)〜(e)は、それぞれ本発明の金具付き回路基板の製造方法の実施の形態の一例を示す工程毎の斜視図である。図1において、1はセラミック基板、2はセラミック支持基板、3は接合材ペースト、3aは接合材、4は金属板、4aは金属板4をエッチング加工して形成した金具付き金属回路板、4bは金属板4をエッチング加工して形成した放熱板、5はレジスト、6は金具付き回路基板である。   FIG. 1A to FIG. 1E are perspective views for each process showing an example of an embodiment of a method for manufacturing a circuit board with a metal fitting according to the present invention. In FIG. 1, 1 is a ceramic substrate, 2 is a ceramic support substrate, 3 is a bonding material paste, 3a is a bonding material, 4 is a metal plate, 4a is a metal circuit board with metal fittings formed by etching the metal plate 4, 4b Is a heat sink formed by etching the metal plate 4, 5 is a resist, and 6 is a circuit board with metal fittings.

本発明の金具付き回路基板6の製造方法は、セラミック基板1およびセラミック支持基板2を準備する工程と、セラミック基板1およびセラミック支持基板2を横に並べ、これらを挟むように金属板4を上下に配置して、セラミック基板1およびセラミック支持基板2の両主面に金属板4を接合する工程と、セラミック基板1の少なくとも一方主面に接合された金属板4がセラミック基板1の外辺から突出した形状となるように、接合された金属板4をエッチング加工して金具を形成する工程と、セラミック支持基板2を除去する工程とを含むことを特徴とするものである。   The manufacturing method of the circuit board 6 with a metal fitting according to the present invention includes a step of preparing the ceramic substrate 1 and the ceramic support substrate 2, and the ceramic substrate 1 and the ceramic support substrate 2 arranged side by side, and the metal plate 4 is vertically moved so as to sandwich them. And the step of bonding the metal plate 4 to both main surfaces of the ceramic substrate 1 and the ceramic support substrate 2, and the metal plate 4 bonded to at least one main surface of the ceramic substrate 1 from the outer side of the ceramic substrate 1. It includes a step of etching the joined metal plate 4 to form a metal fitting so as to have a protruding shape, and a step of removing the ceramic support substrate 2.

このことから、予め分割されたセラミック基板1とセラミック支持基板2とを用いているので、セラミック基板1を切断することなしに、セラミック支持基板2を取り除くことで容易に端子等の金具をセラミック基板1の外辺から突出させることができる。セラミック基板1を切除するのにダイシングや折り曲げを行なわず、金属板回路板4aの金具部分(端子)を傷つけたり金属回路板4aの金具部分(端子)や金属回路板4aとセラミック基板1との接合部に力を加えたりすることがないので、高電圧大電流を流す金属回路板4aを高密度に形成しても金属回路板4a間の耐電圧が低下することがなく、金属回路板4aの金具部分(端子)が変形することや金属回路板4aとセラミック基板1との接合信頼性が低下することがない。また、金具付きの金属回路板4aとセラミック基板1との接合部をセラミック基板1の端部に形成することができるので、セラミック基板1および金具付き回路基板6を小型化することができる。   Accordingly, since the ceramic substrate 1 and the ceramic support substrate 2 which are divided in advance are used, the metal substrate such as a terminal can be easily attached by removing the ceramic support substrate 2 without cutting the ceramic substrate 1. It can protrude from the outer side of 1. Dicing or bending is not performed to cut the ceramic substrate 1, but the metal part (terminal) of the metal plate circuit board 4 a is damaged, or the metal part (terminal) of the metal circuit board 4 a or the metal circuit board 4 a and the ceramic substrate 1 are Since no force is applied to the joint portion, the withstand voltage between the metal circuit boards 4a does not decrease even if the metal circuit board 4a for flowing a high voltage and large current is formed at a high density, and the metal circuit board 4a. The metal parts (terminals) are not deformed, and the joining reliability between the metal circuit board 4a and the ceramic substrate 1 is not lowered. Moreover, since the junction part of the metal circuit board 4a with a metal fitting and the ceramic substrate 1 can be formed in the edge part of the ceramic substrate 1, the ceramic substrate 1 and the circuit board 6 with a metal fitting can be reduced in size.

図1に示す例では、セラミック基板1の外辺から突出する金具は、セラミック基板1の上面に形成された金属回路板4aと一体に形成されており、外部回路との接続に用いられる端子や放熱板として用いられる。金具は、金属回路板4aと接続されていないものを形成してもよく、この場合は、放熱板や金具付き回路基板6を外部部品や装置に固定するための固定板として用いてもよい。また、セラミック基板1の下面の放熱板4bは、セラミック基板1の外辺から突出していないが、これをセラミック基板1の外辺から突出する金具として形成し、外部への放熱面積を大きくすることでより効率よく放熱したり、突出した部分に貫通孔を形成してねじ止めにより固定したりするようにしてもよい。また、上面と同様の端子付きの金属回路板4aをセラミック基板1の下面に形成してもよい。   In the example shown in FIG. 1, the metal fitting protruding from the outer side of the ceramic substrate 1 is formed integrally with the metal circuit board 4a formed on the upper surface of the ceramic substrate 1, and the terminal used for connection with an external circuit or Used as a heat sink. The metal fitting may be formed not connected to the metal circuit board 4a, and in this case, it may be used as a fixing plate for fixing the heat radiating plate or the circuit board 6 with the metal fitting to an external component or device. Moreover, although the heat sink 4b on the lower surface of the ceramic substrate 1 does not protrude from the outer side of the ceramic substrate 1, it is formed as a metal fitting protruding from the outer side of the ceramic substrate 1 to increase the heat dissipation area to the outside. The heat may be radiated more efficiently, or a through hole may be formed in the protruding portion and fixed by screwing. Further, a metal circuit board 4 a with terminals similar to the upper surface may be formed on the lower surface of the ceramic substrate 1.

図2(a)は、図1(b)におけるA−A線での断面の一例を示す断面図であり、図2(b)は、図2(a)とは別の例を示す断面図である。   2A is a cross-sectional view showing an example of a cross section taken along line AA in FIG. 1B, and FIG. 2B is a cross-sectional view showing an example different from FIG. 2A. It is.

また、本発明の金具付き回路基板6の製造方法は、図2に示す例のように、一方主面側のセラミック基板1と金属板4との接合部からセラミック支持基板2と金属板4との接合部までの長さ(図2にL1で示す。)と、他方主面側のセラミック基板1と金属板4との接合部からセラミック支持基板2と金属板4との接合部までの長さ(図2にL2で示す。)とを同じにすることが好ましい。これにより、接合後に冷却した際に、金属板4・4のセラミック基板1およびセラミック支持基板2に拘束されることなく収縮する部分の長さが並べられたセラミック基板1およびセラミック支持基板2の上下で同じになるので、上下で金属板4・4の収縮量が同じになり、収縮差によりセラミック基板1から突出した金属板4・4が変形することがない。結果として、セラミック基板1の外辺から突出した端子等の金具の寸法精度がより優れた金具付き回路基板6を製造することができる。これは、図2(a)に示す例のように、上下の接合部の位置が同じ場合であっても、あるいは図2(b)に示す例のように、上下の接合部の位置が異なっている場合であっても同様である。   Moreover, the manufacturing method of the circuit board 6 with a metal fitting of this invention is the ceramic support substrate 2 and the metal plate 4 from the junction part of the ceramic substrate 1 and the metal plate 4 of one main surface side like the example shown in FIG. 2 (indicated by L1 in FIG. 2) and the length from the junction between the ceramic substrate 1 and the metal plate 4 on the other main surface side to the junction between the ceramic support substrate 2 and the metal plate 4 It is preferable to make the same (indicated by L2 in FIG. 2). Thus, when cooled after joining, the lengths of the ceramic substrate 1 and the ceramic support substrate 2 in which the lengths of the metal plates 4 and 4 contracted without being restrained by the ceramic substrate 1 and the ceramic support substrate 2 are aligned. Therefore, the amount of contraction of the metal plates 4 and 4 is the same at the top and bottom, and the metal plates 4 and 4 protruding from the ceramic substrate 1 are not deformed due to the difference in contraction. As a result, it is possible to manufacture the circuit board 6 with metal fittings that is more excellent in dimensional accuracy of metal fittings such as terminals protruding from the outer side of the ceramic substrate 1. Even if the positions of the upper and lower joints are the same as in the example shown in FIG. 2 (a), or the positions of the upper and lower joints are different as in the example shown in FIG. 2 (b). This is the same even if

また、本発明の金具付き回路基板6の製造方法は、金属板4を接合する工程と金属板4をエッチング加工する工程との間に、セラミック基板1とセラミック支持基板2との間を樹脂で充填する工程を含むことが好ましい。このことから、セラミック基板1とセラミック支持基板2との間の隙間から金具の裏面にエッチング液が回りこむことを防ぐので、金具の寸法精度を高めることができるようになるとともに、金具の一部が薄くなってしまうことによる部分的な強度低下、電気抵抗増大等の不具合を防ぐことができる。   Moreover, the manufacturing method of the circuit board 6 with metal fittings of this invention is a resin between the ceramic substrate 1 and the ceramic support substrate 2 between the process of joining the metal plate 4, and the process of etching the metal plate 4. It is preferable to include the step of filling. This prevents the etchant from flowing from the gap between the ceramic substrate 1 and the ceramic support substrate 2 to the back surface of the metal fitting, so that the dimensional accuracy of the metal fitting can be improved and a part of the metal fitting can be obtained. Therefore, it is possible to prevent problems such as a partial decrease in strength and an increase in electrical resistance due to thinning.

図3(a)〜(e)は、それぞれ本発明の金具付き回路基板6の製造方法の実施の形態の一例を示す図1と同様の工程毎の斜視図である。図3において、4cは接続金属板、1aは分割溝、1cはセラミック基板1の端部である。   FIGS. 3A to 3E are perspective views for each step similar to FIG. 1 showing an example of an embodiment of a method for manufacturing a circuit board 6 with a metal fitting according to the present invention. In FIG. 3, 4 c is a connection metal plate, 1 a is a dividing groove, and 1 c is an end of the ceramic substrate 1.

また、本発明の金具付き回路基板6の製造方法は、図3に示す例のように、金属板4をエッチング加工する工程において、セラミック基板1およびセラミック支持基板2の両方に接合された接続金属板4cを形成し、しかる後、この接続金属板4cを取り除く工程を含むことが好ましい。これにより、エッチング加工により金具とセラミック支持基板2とが分離された後でも金具の下面にセラミック支持基板2が固定されているので、エッチング加工のシャワー圧や搬送時のがたつき等による金具の変形を抑えることができる。   Moreover, the manufacturing method of the circuit board 6 with metal fittings of this invention is the connection metal joined to both the ceramic board | substrate 1 and the ceramic support board | substrate 2 in the process of etching the metal plate 4 like the example shown in FIG. It is preferable to include a step of forming the plate 4c and then removing the connecting metal plate 4c. Thereby, even after the metal fitting and the ceramic support substrate 2 are separated by etching, the ceramic support substrate 2 is fixed to the lower surface of the metal fitting. Deformation can be suppressed.

図3に示す例では、接続金属板4cは、セラミック基板1およびセラミック支持基板2の2つの外周部に重なるような枠状に形成されているが、セラミック基板1とセラミック支持基板2とにまたがって両方に接合されたものであればよいので、1つ以上の棒状のものでもよい。   In the example shown in FIG. 3, the connection metal plate 4 c is formed in a frame shape so as to overlap two outer peripheral portions of the ceramic substrate 1 and the ceramic support substrate 2, but straddles the ceramic substrate 1 and the ceramic support substrate 2. Therefore, one or more rod-shaped members may be used.

また、図3に示す例では、接続金属板4cを取り除く工程は、予めセラミック基板1に設けておいた分割溝1cに沿ってセラミック基板1を分割切断して、接続金属板4cが接続されたセラミック基板1の端部1bごと取り除くことにより行なっている。なお、分割溝1aを設けず、同様の位置でダイシングやレーザによりセラミック基板1を切断してもよい。金属回路板4aや放熱板4bの周囲に接続金属板4cがあっても構わない場合は、セラミック基板1を切断することなく、接続金属板4cを切断してその一部だけをセラミック支持基板2とともに取り除いてもよい。   In the example shown in FIG. 3, the step of removing the connection metal plate 4 c is performed by dividing and cutting the ceramic substrate 1 along the division grooves 1 c previously provided in the ceramic substrate 1 and connecting the connection metal plate 4 c. This is done by removing the end 1b of the ceramic substrate 1 together. In addition, the ceramic substrate 1 may be cut by dicing or laser at the same position without providing the dividing groove 1a. When there may be a connection metal plate 4c around the metal circuit board 4a and the heat sink 4b, the connection metal plate 4c is cut without cutting the ceramic substrate 1, and only a part thereof is ceramic support substrate 2. It may be removed together.

以下、本発明の金具付き回路基板の製造方法の各工程について詳細に説明する。   Hereinafter, each process of the manufacturing method of the circuit board with a metal fitting of the present invention is explained in detail.

まず、セラミック基板1およびセラミック支持基板2を準備する。   First, the ceramic substrate 1 and the ceramic support substrate 2 are prepared.

セラミック基板1は、例えば略四角形状の板状体であり、金具付き回路基板6において金属回路板4aを支持する支持部材として機能する。このようなセラミック基板1は、酸化アルミニウム質焼結体,ムライト質焼結体,炭化珪素質焼結体,窒化アルミニウム質焼結体,窒化珪素質焼結体等の電気絶縁材料で形成されており、例えば、0.1mm〜0.7mmの厚みのものが用いられる。   The ceramic substrate 1 is, for example, a substantially rectangular plate-like body, and functions as a support member that supports the metal circuit plate 4a in the circuit board 6 with metal fittings. Such a ceramic substrate 1 is formed of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, or a silicon nitride sintered body. For example, a thickness of 0.1 mm to 0.7 mm is used.

セラミック基板1は、高強度で厚みを薄くすることが可能な窒化珪素質焼結体が好ましく、この場合は、絶縁基板1の厚みは0.1mm〜0.4mmがより好ましい。セラミック基板1が0.1mmより薄くなると、支持体としての強度が不足しやすくなって金属板4との接合時に反りが大きくなりやすい傾向があり、厚みが0.4mmを超えると、セラミック基板1の熱抵抗は金属回路板4aや放熱板4bより大きいため熱放散性が低下する傾向がある。   The ceramic substrate 1 is preferably a silicon nitride-based sintered body that has high strength and can be thinned. In this case, the thickness of the insulating substrate 1 is more preferably 0.1 mm to 0.4 mm. If the ceramic substrate 1 is thinner than 0.1 mm, the strength as a support tends to be insufficient, and the warp tends to increase when bonded to the metal plate 4. If the thickness exceeds 0.4 mm, the heat of the ceramic substrate 1 is increased. Since the resistance is larger than that of the metal circuit board 4a and the heat sink 4b, the heat dissipating property tends to be lowered.

セラミック基板1は、例えば窒化珪素質焼結体から成る場合であれば、窒化珪素,酸化アルミニウム,酸化マグネシウム,酸化イットリウム等の原料粉末に適当な有機バインダ,可塑剤,溶剤を添加混合して泥漿物に従来周知のドクターブレード法やカレンダーロール法を採用することによってセラミックグリーンシート(セラミック生シート)を形成し、次にこのセラミックグリーンシートに適当な打ち抜き加工を施して所定形状となすとともに、必要に応じて複数枚を積層して成形体となし、しかる後、これを窒化雰囲気等の非酸化性雰囲気にて1600〜2000℃の温度で焼成することによって製作される。図3に示す例のようにセラミック基板1に分割溝1aを設ける場合は、セラミックグリーンシートを積層した成形体にカッター刃を押し当てる等して溝を形成しておくことにより設けることができる。セラミック基板1を作製した後にレーザやダイシング装置を用いて溝加工してもよい。   If the ceramic substrate 1 is made of, for example, a silicon nitride sintered body, a suitable organic binder, plasticizer, and solvent are added to and mixed with raw material powders such as silicon nitride, aluminum oxide, magnesium oxide, yttrium oxide, and the like. A ceramic green sheet (ceramic green sheet) is formed by adopting the doctor blade method and calendar roll method, which are well-known in the past, and then the ceramic green sheet is punched appropriately to form a predetermined shape. Accordingly, a plurality of sheets are laminated to form a molded body, and thereafter, the molded body is fired at a temperature of 1600 to 2000 ° C. in a non-oxidizing atmosphere such as a nitriding atmosphere. When the dividing groove 1a is provided on the ceramic substrate 1 as in the example shown in FIG. 3, it can be provided by forming a groove by pressing a cutter blade against a molded body in which ceramic green sheets are laminated. After the ceramic substrate 1 is manufactured, grooves may be formed using a laser or a dicing apparatus.

セラミック支持基板2は、セラミック基板1と同じ材質で同じ厚みであることが、後工程での金属板4の反りや曲がりを防ぐために好ましい。セラミック基板1と同様の方法で、セラミックグリーンシートの厚みを同じにしてセラミック支持基板2を作製すれば、セラミック基板1とセラミック支持基板2の厚みを同じ厚みとすることができる。両社が異なる厚みであっても研磨加工により同じ厚みにすることができるが、1枚のセラミック製の基板を切断することによってセラミック基板1とセラミック支持基板2を形成すると、セラミック基板1とセラミック支持基板2とが向き合う部分の厚みを容易に同じにすることができるので好ましい。   The ceramic support substrate 2 is preferably the same material and the same thickness as the ceramic substrate 1 in order to prevent warping and bending of the metal plate 4 in a subsequent process. If the ceramic support substrate 2 is produced with the same thickness of the ceramic green sheet by the same method as the ceramic substrate 1, the ceramic substrate 1 and the ceramic support substrate 2 can have the same thickness. Even if the two companies have different thicknesses, the same thickness can be obtained by polishing. However, if the ceramic substrate 1 and the ceramic support substrate 2 are formed by cutting one ceramic substrate, the ceramic substrate 1 and the ceramic support are formed. The thickness of the portion facing the substrate 2 can be easily made the same, which is preferable.

次に、セラミック基板1およびセラミック支持基板2を離間させて並べ、これらを挟むように金属板4を上下に配置してセラミック基板1およびセラミック支持基板2の両主面に金属板4を接合する。   Next, the ceramic substrate 1 and the ceramic support substrate 2 are arranged apart from each other, and the metal plate 4 is vertically arranged so as to sandwich them, and the metal plate 4 is joined to both main surfaces of the ceramic substrate 1 and the ceramic support substrate 2. .

図1および図3に示す例では、セラミック基板1の1辺から金具を突出させているが、金具はセラミック基板1の2辺以上から突出させてもよい。この場合は、セラミック基板1の金具を突出させる全ての辺の外側にセラミック支持基板2を配置すればよい。セラミック支持基板2の数は、セラミック基板1の金具を突出させる辺の数に応じた数としてもよいし、まとめた1枚としてもよい。例えば、隣り合う2辺から金具を突出させる場合は、2枚のセラミック支持基板2を各辺にそれぞれ配置してもよいし、1枚のL字型のセラミック支持基板2を配置してもよい。   In the example shown in FIGS. 1 and 3, the metal fitting protrudes from one side of the ceramic substrate 1, but the metal fitting may protrude from two or more sides of the ceramic substrate 1. In this case, the ceramic support substrate 2 may be disposed outside all sides from which the metal substrate 1 is protruded. The number of ceramic support substrates 2 may be a number corresponding to the number of sides from which the metal fittings of the ceramic substrate 1 are projected, or may be a single piece. For example, when protruding metal fittings from two adjacent sides, two ceramic support substrates 2 may be arranged on each side, or one L-shaped ceramic support substrate 2 may be arranged. .

セラミック基板1とセラミック支持基板2とをその端面が接するように並べてその上下に金属板4を配置すると、室温から接合温度まで加熱した際に、セラミック基板1およびセラミック支持基板2が熱膨張しても、セラミック基板1およびセラミック支持基板2は、通常それよりも大きく熱膨張する金属板4の上に載っているので、接合される温度ではそれらの間は金属板4とセラミック基板1およびセラミック支持基板2との熱膨張差だけ離間する。従来技術のようにセラミック基板1とセラミック支持基板2とが一体となっているような場合は、接合された金属板4とセラミック板1との間において冷却時に熱応力が発生するが、本発明のようにセラミック基板1とセラミック支持基板2との2つの基板に分かれている場合は、この接合部間に発生する熱応力は、金属板4の収縮をセラミック基板1とセラミック支持基板2との間の空間が吸収することにより緩和されるので、金属板4とセラミック基板1との接合信頼性が向上する。   When the ceramic substrate 1 and the ceramic support substrate 2 are arranged so that their end faces are in contact with each other and the metal plates 4 are arranged above and below the ceramic substrate 1, the ceramic substrate 1 and the ceramic support substrate 2 are thermally expanded when heated from room temperature to the bonding temperature. However, since the ceramic substrate 1 and the ceramic support substrate 2 are usually placed on the metal plate 4 that thermally expands larger than that, the metal plate 4, the ceramic substrate 1, and the ceramic support are between them at the bonding temperature. They are separated from the substrate 2 by a difference in thermal expansion. When the ceramic substrate 1 and the ceramic support substrate 2 are integrated as in the prior art, thermal stress is generated during cooling between the joined metal plate 4 and the ceramic plate 1. When the ceramic substrate 1 and the ceramic support substrate 2 are divided into two substrates as described above, the thermal stress generated between the joints causes the metal plate 4 to contract and the ceramic substrate 1 and the ceramic support substrate 2 to contract. Since the space between them is absorbed, the bonding reliability between the metal plate 4 and the ceramic substrate 1 is improved.

セラミック基板1やセラミック支持基板2、あるいは金属板4の材質や寸法および接合材ペースト3の種類や厚みにより、加熱した際にセラミック基板1およびセラミック支持基板2と金属板4との位置がずれる場合があり、接合時のセラミック基板1とセラミック支持基板2との間の空間を確実に設けるために、接合前にセラミック基板1とセラミック支持基板2とを離間させて並べるのが好ましい。   When the ceramic substrate 1, the ceramic support substrate 2, or the metal plate 4 is heated and the positions of the ceramic substrate 1, the ceramic support substrate 2, and the metal plate 4 are shifted due to the material and dimensions of the metal plate 4 and the type and thickness of the bonding material paste 3. In order to reliably provide a space between the ceramic substrate 1 and the ceramic support substrate 2 at the time of bonding, it is preferable to arrange the ceramic substrate 1 and the ceramic support substrate 2 apart from each other before bonding.

金属板4は銅やアルミニウム等から成り、銅やアルミニウムのインゴット(塊)に圧延加工法や打ち抜き加工法等、従来周知の金属加工法を施すことによって、例えば0.1mm〜1mmの厚みの板状にしたものである。   The metal plate 4 is made of copper, aluminum, or the like, and is formed into a plate shape having a thickness of, for example, 0.1 mm to 1 mm by subjecting a copper or aluminum ingot (lumb) to a conventionally known metal processing method such as a rolling method or a punching method. It is a thing.

金属板4が銅から成る場合は、無酸素銅を用いることが好ましい。無酸素銅を用いると、金属板4の表面が銅中に存在する酸素により酸化されることがなく、接合材3aとの濡れ性がより良好となるので、金属板4とセラミック基板1との接合が強固となる。   When the metal plate 4 is made of copper, it is preferable to use oxygen-free copper. When oxygen-free copper is used, the surface of the metal plate 4 is not oxidized by oxygen present in the copper, and the wettability with the bonding material 3a becomes better. Bonding becomes strong.

金属板4の厚みは0.3mm〜0.5mmとするのが好ましい。金属板4の厚みが0.3mm未満であると、大電流を流すと発熱量が多くなる傾向がある。また金属板4の厚みが0.5mmを超える場合は、金属板4とセラミック基板1との熱膨張係数の違いによりセラミック基板1に加わる応力が大きくなりやすいので、表と裏の金属板4のパターンの形状の違いによりセラミック基板1の反りが大きくなりやすい傾向がある。   The thickness of the metal plate 4 is preferably 0.3 mm to 0.5 mm. If the thickness of the metal plate 4 is less than 0.3 mm, the amount of heat generated tends to increase when a large current is passed. When the thickness of the metal plate 4 exceeds 0.5 mm, the stress applied to the ceramic substrate 1 tends to increase due to the difference in thermal expansion coefficient between the metal plate 4 and the ceramic substrate 1, so the pattern of the front and back metal plates 4 is increased. The warp of the ceramic substrate 1 tends to increase due to the difference in shape.

セラミック基板1およびセラミック支持基板2と金属板4とを接合する方法は、セラミック基板1およびセラミック支持基板2の主面上にあらかじめメタライズ層を形成しておき、このメタライズ層と金属板4とをろう材により接合する方法や、メタライズ層を形成せず、ろう材に加えて活性金属を用いてセラミック基板1およびセラミック支持基板2と金属板4とを直接接合する方法がある。   The method of joining the ceramic substrate 1 and the ceramic support substrate 2 to the metal plate 4 is to form a metallized layer on the main surfaces of the ceramic substrate 1 and the ceramic support substrate 2 in advance, and then connect the metallized layer and the metal plate 4 to each other. There are a method of bonding with a brazing material and a method of directly bonding the ceramic substrate 1 and the ceramic support substrate 2 to the metal plate 4 using an active metal in addition to the brazing material without forming a metallized layer.

前者の方法では、セラミック基板1およびセラミック支持基板2の上のメタライズ層上に、例えば銀ろう材(銀:72重量%−銅:28重量%)やアルミニウムろう材(アルミニウム:88重量%−シリコン:12重量%)を主成分とする接合材ペースト3を塗布して乾燥し、これらを挟むように金属板4を上下に配置し、真空中もしくは中性・還元雰囲気中にて所定温度(銀ろう材の場合は約800℃、アルミニウムろう材の場合は約600℃)で加熱し、接合材ペースト3中の有機溶剤や溶媒を蒸散させるとともにろう材(接合材3a)を溶融させることにより接合される。接合材ペースト3の塗布に替えてシート状の接合材3aを載置してもよい。   In the former method, on the metallized layer on the ceramic substrate 1 and the ceramic support substrate 2, for example, a silver brazing material (silver: 72% by weight-copper: 28% by weight) or an aluminum brazing material (aluminum: 88% by weight-silicon). : 12% by weight) of the bonding material paste 3 as a main component is applied and dried, and the metal plates 4 are arranged up and down so as to sandwich them, and in vacuum or in a neutral / reducing atmosphere at a predetermined temperature (silver) Heating is performed at about 800 ° C for brazing material, and about 600 ° C for aluminum brazing material, and the organic solvent and solvent in the bonding material paste 3 are evaporated and the brazing material (bonding material 3a) is melted. Is done. Instead of the application of the bonding material paste 3, a sheet-shaped bonding material 3a may be placed.

セラミック基板1およびセラミック支持基板2にメタライズ層を形成するには、上記したセラミック基板1およびセラミック支持基板2の製造工程において、タングステン(W),モリブデン(Mo),マンガン(Mn)あるいはこれらを混合した金属ペーストをセラミックグリーンシート上に所定パターン形状にスクリーン印刷法等の塗布方法により塗布しておき、セラミックグリーンシートと同時焼成すればよい。あるいは、セラミック基板1およびセラミック支持基板2上に金属ペーストを同様にして塗布して、焼き付けてもよい。   In order to form a metallized layer on the ceramic substrate 1 and the ceramic support substrate 2, tungsten (W), molybdenum (Mo), manganese (Mn) or a mixture thereof is mixed in the manufacturing process of the ceramic substrate 1 and the ceramic support substrate 2 described above. The applied metal paste may be applied to the ceramic green sheet in a predetermined pattern shape by a coating method such as a screen printing method and fired simultaneously with the ceramic green sheet. Alternatively, a metal paste may be applied in the same manner on the ceramic substrate 1 and the ceramic support substrate 2 and baked.

なお、メタライズ層はその表面にニッケル・金等の良導電性で、耐蝕性および接合材3aとの濡れ性が良好な金属をメッキ法により1〜20μmの厚みに被着させておくと、メタライズ層の酸化腐蝕を有効に防止することができるとともにメタライズ層と金属板4との接合材3aによる接合を極めて強固となすことができる。   It should be noted that the metallized layer is formed by depositing a metal having good conductivity such as nickel and gold and having good corrosion resistance and wettability with the bonding material 3a to a thickness of 1 to 20 μm by plating. The oxidative corrosion of the layer can be effectively prevented, and the bonding of the metallized layer and the metal plate 4 by the bonding material 3a can be made extremely strong.

後者の方法では、セラミック基板1およびセラミック支持基板2の主面上に活性金属を含む接合材ペースト3を周知のスクリーン印刷等により塗布して乾燥し、これらを挟むように金属板4を上下に配置し、金属板4に1cmあたり10〜100gの加重をかけながら非酸化性雰囲気中にて所定の温度(銀ろう材の場合は約800℃、アルミニウムろう材の場合は約600℃)に加熱し、接合材ペースト3中の有機溶剤や溶媒を蒸散させるとともに溶融させ、接合材3aを介してセラミック基板1、セラミック支持基板2の上下面と金属板4とを接合する。 In the latter method, a bonding material paste 3 containing an active metal is applied to the main surfaces of the ceramic substrate 1 and the ceramic support substrate 2 by a known screen printing method and dried, and the metal plate 4 is moved up and down so as to sandwich them. Place the metal plate 4 at a predetermined temperature (approximately 800 ° C for silver brazing material and approximately 600 ° C for aluminum brazing material) in a non-oxidizing atmosphere while applying a load of 10 to 100 g per cm 2 By heating, the organic solvent and solvent in the bonding material paste 3 are evaporated and melted, and the upper and lower surfaces of the ceramic substrate 1 and the ceramic support substrate 2 are bonded to the metal plate 4 through the bonding material 3a.

この場合の接合材ペースト3は、95〜98質量%の上記と同様のろう材粉末と、2〜5質量%の、チタン(Ti),ジルコニウム(Zr),ハフニウム(Hf)およびこれらの水素化物の少なくとも1種から成る活性金属粉末とから成る活性金属ろう材に、適当な有機溶剤、溶媒を添加混合し、混練することによって製作される。   The bonding material paste 3 in this case is composed of 95 to 98% by mass of the same brazing filler metal powder as described above, 2 to 5% by mass of titanium (Ti), zirconium (Zr), hafnium (Hf), and hydrides thereof. A suitable organic solvent and a solvent are added to and mixed with an active metal brazing material composed of at least one active metal powder.

いずれの方法においても、セラミック基板1およびセラミック支持基板2またはその上のメタライズ層の上に、例えば従来周知のスクリーン印刷法を用いて、例えば10〜50μmの厚さで所定パターン形状に接合材ペースト3を印刷塗布し、約120℃程度の温度で乾燥することにより、セラミック基板1およびセラミック支持基板2の表面に金属板4を接合するための接合材3aが供給される。   In any method, the bonding material paste is formed on the ceramic substrate 1 and the ceramic support substrate 2 or the metallized layer thereon using, for example, a conventionally known screen printing method in a predetermined pattern shape with a thickness of, for example, 10 to 50 μm. 3 is printed and applied, and dried at a temperature of about 120 ° C., whereby a bonding material 3 a for bonding the metal plate 4 to the surfaces of the ceramic substrate 1 and the ceramic support substrate 2 is supplied.

図1および図3に示す例では、セラミック基板1の上面には金属回路板4aの形状に、下面には、図面では見えないが、放熱板4bの形状に接合材ペースト3を塗布している。セラミック支持基板2の上面には金属回路板4aのセラミック基板1の外辺から突出した金具の先端から先の部分に接合材ペースト3を塗布している。セラミック基板1の外辺から突出した部分の下面には接合材ペースト3を塗布していないことから、金具がセラミック支持基板2に接合されることがないので、セラミック支持基板2を容易に取り除くことができる。セラミック支持基板2の下面にも、平面視して上面と同様の位置に接合材ペースト3を塗布している。金属板4をセラミック支持基板2の上面だけに接合すると、接合した後に冷却した際に、金属板4とセラミック支持基板2との熱膨張係数の差により反ってしまうことがあるからである。   In the example shown in FIGS. 1 and 3, the bonding material paste 3 is applied to the shape of the metal circuit board 4a on the upper surface of the ceramic substrate 1 and to the shape of the heat sink 4b on the lower surface, although not visible in the drawing. . On the upper surface of the ceramic support substrate 2, the bonding material paste 3 is applied to the tip of the metal circuit board 4 a protruding from the outer side of the ceramic substrate 1 to the tip. Since the bonding material paste 3 is not applied to the lower surface of the portion protruding from the outer side of the ceramic substrate 1, the metal fitting is not bonded to the ceramic support substrate 2, so that the ceramic support substrate 2 can be easily removed. Can do. The bonding material paste 3 is also applied to the lower surface of the ceramic support substrate 2 at the same position as the upper surface in plan view. This is because if the metal plate 4 is bonded only to the upper surface of the ceramic support substrate 2, the metal plate 4 may be warped due to the difference in thermal expansion coefficient between the metal plate 4 and the ceramic support substrate 2 when cooled after bonding.

図3に示す例では、セラミック基板1およびセラミック支持基板2の外周部に接続金属板4cを接続するための接合材ペースト3が塗布されているが、上述したように一方主面側のセラミック基板1と金属板4との接合部からセラミック支持基板2と金属板4との接合部までの長さと、他方主面側のセラミック基板1と金属板4との接合部からセラミック支持基板2と金属板4との接合部までの長さとが同じであるのが好ましいので、接続金属板4cとセラミック基板1およびセラミック支持基板2のそれぞれとの接続部間の距離も同じになるようにするのが好ましい。例えば、図3(a)に示す例であれば、セラミック支持基板2と接続金属板4cとを接続するための接合材ペースト3のパターンの、セラミック基板1側の端を、金具の先を接合する接合材ペースト3のパターンに合わせるのが好ましい。   In the example shown in FIG. 3, the bonding material paste 3 for connecting the connection metal plate 4 c is applied to the outer peripheral portions of the ceramic substrate 1 and the ceramic support substrate 2. The length from the junction between 1 and the metal plate 4 to the junction between the ceramic support substrate 2 and the metal plate 4, and the ceramic support substrate 2 and the metal from the junction between the ceramic substrate 1 and the metal plate 4 on the other main surface side Since it is preferable that the length to the joint portion with the plate 4 is the same, the distance between the connection portions of the connection metal plate 4c and each of the ceramic substrate 1 and the ceramic support substrate 2 should be the same. preferable. For example, in the example shown in FIG. 3A, the end on the ceramic substrate 1 side of the pattern of the bonding material paste 3 for connecting the ceramic support substrate 2 and the connection metal plate 4c is bonded to the tip of the metal fitting. It is preferable to match the pattern of the bonding material paste 3 to be made.

また、金属板4にセラミック基板1およびセラミック支持基板2に比べ熱膨張係数の大きい金属を用いた場合は、最初にセラミック基板1およびセラミック支持基板2の端面同士を接触させて並べたとしても、上述したように接合材3aが溶融して約800℃で固まった時点では、セラミック基板1とセラミック支持基板2とは離間する。例えば、セラミック基板1およびセラミック支持基板2にアルミナ質焼結体基板(熱膨張係数αa:7×10−6/℃)を、金属板4に銅(熱膨張係数αc:17×10−6/℃)を用い、接合材ペースト3を塗布してセラミック基板1とセラミック支持基板2とを端面同士が接するように並べ、これらを挟むように金属板4を上下に配置した時点(室温Tr:20℃)での接合材ペースト3間の距離L0を50mmとすると、接合材3aが固まる温度(Tm:800℃)では、セラミック基板1とセラミック支持基板2との間には、L=L0×ΔT×Δα=L0×(Tm−Tr)×(αc−αa)=0.39mmの隙間ができる。上述したように、この隙間により接合後の冷却時に発生する熱応力を緩和することができるが、加熱した際のセラミック基板1およびセラミック支持基板2と金属板4との位置ずれを考慮して、接合前に予めセラミック基板1とセラミック支持基板2とを離間させて(両者の間に隙間を設けて)並べた場合は、冷却後も隙間ができる。 Further, when a metal having a larger thermal expansion coefficient than the ceramic substrate 1 and the ceramic support substrate 2 is used for the metal plate 4, even if the end surfaces of the ceramic substrate 1 and the ceramic support substrate 2 are first brought into contact with each other, As described above, when the bonding material 3a is melted and hardened at about 800 ° C., the ceramic substrate 1 and the ceramic support substrate 2 are separated from each other. For example, an alumina sintered body substrate (thermal expansion coefficient αa: 7 × 10 −6 / ° C.) is used as the ceramic substrate 1 and the ceramic support substrate 2, and copper (thermal expansion coefficient αc: 17 × 10 −6 / 8) is used as the metal plate 4. When the bonding material paste 3 is applied and the ceramic substrate 1 and the ceramic support substrate 2 are arranged so that the end faces are in contact with each other, and the metal plate 4 is vertically arranged so as to sandwich them (room temperature Tr: 20) If the distance L0 between the bonding material pastes 3 at 50 ° C. is 50 mm, L = L0 × ΔT between the ceramic substrate 1 and the ceramic support substrate 2 at the temperature at which the bonding material 3a is hardened (Tm: 800 ° C.). A gap of ΔΔα = L0 × (Tm−Tr) × (αc−αa) = 0.39 mm is formed. As described above, this gap can relieve the thermal stress generated during cooling after bonding, but in consideration of misalignment between the ceramic substrate 1 and the ceramic support substrate 2 and the metal plate 4 when heated, In the case where the ceramic substrate 1 and the ceramic support substrate 2 are separated from each other in advance before bonding (a gap is provided between them), a gap is formed even after cooling.

金属板4を接合した後、金属板4をエッチング加工する前に、この隙間から金具の裏面にエッチング液が回りこむことを防ぐために、この隙間に樹脂を充填する場合は、例えばディスペンサ等により隙間にレジスト樹脂ペーストを注入すればよい。後のエッチング加工時に用いるレジスト樹脂を用いると、エッチング加工後のレジスト膜を剥離する際にこの隙間に充填した樹脂も同時に除去できるので好ましい。この場合の樹脂は、レジスト樹脂と全く同じ樹脂でなくても、レジスト膜の剥離液により除去できるものであればよい。   After the metal plate 4 is joined and before the metal plate 4 is etched, in order to prevent the etchant from flowing into the back surface of the metal fitting from the gap, the resin is filled in the gap. A resist resin paste may be injected into the substrate. It is preferable to use a resist resin used at the time of subsequent etching because the resin filled in the gap can be removed at the same time when the resist film after the etching is peeled off. The resin in this case is not limited to the same resin as the resist resin, but may be any resin that can be removed by the resist film stripping solution.

接続金属板4cの下には樹脂を注入せず、接続金属板4cのセラミック基板1とセラミック支持基板2との間の隙間と重なる部分の厚みを薄くして、後の接続金属板4cを取り除く工程において切断しやすいようにしてもよい。   Resin is not poured under the connection metal plate 4c, and the thickness of the portion of the connection metal plate 4c that overlaps the gap between the ceramic substrate 1 and the ceramic support substrate 2 is reduced to remove the subsequent connection metal plate 4c. You may make it easy to cut | disconnect in a process.

次に、セラミック基板1の少なくとも一方主面に接合された金属板4がセラミック基板1の外辺から突出した形状となるように、接合された金属板4をエッチング加工して金具を形成する。   Next, the bonded metal plate 4 is etched to form a metal fitting so that the metal plate 4 bonded to at least one main surface of the ceramic substrate 1 protrudes from the outer side of the ceramic substrate 1.

エッチング加工は、図1(c)に示すように、金属板4の表面に、金属回路板4aや放熱板4b、あるいは接続金属板4cのパターン形状のレジスト膜5を形成して、金属板4にエッチング液をシャワーにより噴き付ける等することにより行なう。   In the etching process, as shown in FIG. 1C, a resist film 5 having a pattern shape of the metal circuit board 4a, the heat radiating plate 4b, or the connection metal plate 4c is formed on the surface of the metal plate 4, and the metal plate 4 For example, the etching solution is sprayed on the shower.

レジスト膜5の形成は、膜状のレジストフィルムを貼り付ける方法、または液状のレジストインクを塗布して硬化させる方法等により行なわれる。いずれの方法でも金属板4上の全面にレジスト樹脂の膜を形成し、マスクを通して紫外線等を露光して硬化させて未硬化部分を除去することにより、所望のパターン形状に加工する方法がある。レジストインクを塗布する方法の場合は、パターン形状にレジストインクを印刷する方法でもよく、この方法はパターン形状のレジスト膜5の形成が容易であるので好ましい。   The resist film 5 is formed by a method of attaching a film-like resist film or a method of applying and curing a liquid resist ink. In either method, there is a method in which a resist resin film is formed on the entire surface of the metal plate 4 and exposed to ultraviolet rays or the like through a mask and cured to remove uncured portions, thereby processing into a desired pattern shape. In the case of a method of applying a resist ink, a method of printing a resist ink in a pattern shape may be used, and this method is preferable because it is easy to form a resist film 5 having a pattern shape.

レジスト膜5には、金属板4のエッチング加工時にエッチング液により溶解したり剥離したりしない樹脂が用いられ、アクリル系オリゴマー,アクリル系モノマー,無機顔料を含むものが使用され、熱硬化型や紫外線硬化型のものもある。   The resist film 5 is made of a resin that does not dissolve or peel off by the etchant during the etching process of the metal plate 4, and includes a resin containing an acrylic oligomer, an acrylic monomer, and an inorganic pigment. Some are curable.

図1および図3に示す例では、セラミック基板1の上面の金属板4の表面には金属回路板4aの形状に、セラミック基板1の下面の金属板4の表面には、図面では見えないが、放熱板4bの形状にレジストインクを従来周知のスクリーン印刷法を使用して印刷塗布して、例えば150℃で乾燥することでレジスト膜5を形成している。   In the example shown in FIGS. 1 and 3, the surface of the metal plate 4 on the upper surface of the ceramic substrate 1 is in the shape of the metal circuit board 4a, and the surface of the metal plate 4 on the lower surface of the ceramic substrate 1 is not visible in the drawings. The resist film 5 is formed by printing and applying a resist ink to the shape of the heat radiating plate 4b using a conventionally known screen printing method and drying at 150 ° C., for example.

金属板4に対するエッチングは、レジスト膜5が形成された金属板4とセラミック基板1およびセラミック支持基板2との接合体を治具に並べて不要に動かないように配置した後に、金属板4が銅から成る場合であれば、例えば塩化第2鉄溶液を用いて上下面からシャワーエッチングを施すことにより行なわれる。   Etching of the metal plate 4 is performed by arranging the joined body of the metal plate 4 on which the resist film 5 is formed, the ceramic substrate 1 and the ceramic support substrate 2 in a jig so as not to move unnecessarily. In the case of comprising, for example, shower etching is performed from the upper and lower surfaces using a ferric chloride solution.

図1および図3に示す例では、エッチングによりセラミック支持基板2上に形成した接合材3aと金属回路4aとを分離している。図3に示す例のように接続金属板4cを形成する場合は、エッチング工程中にセラミック基板1とセラミック支持基板2とが離れずに並んだ状態を保つため、金属回路4aの端子等の金具が下面にセラミック支持基板2があり、突出していない状態で工程を進めることができ、端子等の金具がシャワーエッチングの液流の圧力やセラミック基板1とセラミック支持基板2との位置がずれて金具に当たることにより発生する金具の変形が発生し難くなる。   In the example shown in FIGS. 1 and 3, the bonding material 3a formed on the ceramic support substrate 2 and the metal circuit 4a are separated by etching. When the connection metal plate 4c is formed as in the example shown in FIG. 3, the ceramic substrate 1 and the ceramic support substrate 2 are kept aligned without being separated during the etching process. However, there is a ceramic support substrate 2 on the lower surface, and the process can proceed without protruding, and the metal fittings such as terminals are displaced by the pressure of the liquid flow of shower etching and the positions of the ceramic substrate 1 and the ceramic support substrate 2 are shifted. Deformation of the metal fitting caused by hitting is difficult to occur.

なお、必ずしもセラミック支持基板2上に形成した接合材3aと金属回路4aとをエッチングにより分離しなくてもよい。例えば、図1(c)に示すレジスト膜5を、セラミック支持基板2の上面に形成した接合材3aと上面視で重なるように、即ち金属回路板4a(金具)のセラミック基板1から突出した部分より長くなるようにレジスト膜5を形成してエッチングすると、金属回路板4a(金具)のセラミック基板1から突出した部分の先端部がセラミック支持基板2に接合材3aを介して接合されることになる。この場合、平面視してこの接合部分と重なるように、セラミック支持基板2の下面の金属板4の表面にもレジスト膜5を形成して、金属板4のこのレジスト膜5の下の部分が接合された状態で残るようにするとよい。このようにすると、エッチング工程においてエッチング液の圧力が金属回路板4a(金具)のセラミック基板1から突出した部分に加わっても、その下のセラミック支持基板2に支持されるので、金具が変形し難くなる。   Note that the bonding material 3a and the metal circuit 4a formed on the ceramic support substrate 2 are not necessarily separated by etching. For example, the resist film 5 shown in FIG. 1C overlaps with the bonding material 3a formed on the upper surface of the ceramic support substrate 2 in a top view, that is, a portion protruding from the ceramic substrate 1 of the metal circuit board 4a (metal fitting). When the resist film 5 is formed to be longer and etched, the tip of the portion of the metal circuit board 4a (metal fitting) protruding from the ceramic substrate 1 is bonded to the ceramic support substrate 2 via the bonding material 3a. Become. In this case, a resist film 5 is also formed on the surface of the metal plate 4 on the lower surface of the ceramic support substrate 2 so as to overlap with the joined portion in plan view, and a portion of the metal plate 4 below the resist film 5 is formed. It is better to remain in a joined state. In this manner, even if the pressure of the etching solution is applied to the portion of the metal circuit board 4a (metal fitting) protruding from the ceramic substrate 1 in the etching process, the metal support plate 2 is supported by the metal substrate 4a (metal fitting). It becomes difficult.

エッチングした後に、レジスト膜5を剥離する。レジスト膜5の剥離は、例えば水酸化ナトリウム水溶液等のアルカリ水溶液、もしくはアセトン等の有機溶剤を用い、シャワー剥離や浸漬してのブラッシング剥離を行なう。   After the etching, the resist film 5 is peeled off. The resist film 5 is peeled off by shower peeling or immersion brushing using, for example, an alkaline aqueous solution such as an aqueous sodium hydroxide solution or an organic solvent such as acetone.

次に、セラミック支持基板2を取り除く。図1に示す例では、金属回路4aとセラミック支持基板2とは既に分離しているので、容易に取り除くことができ、これにより金属回路4a等の金具がセラミック基板1の外辺から突出した金具付き回路基板6を得ることができる。図3に示す例のように、枠状の接続金属板4cを形成する場合は、セラミック基板1を分割溝1aに沿って金具付き回路基板6とセラミック基板1の端部1cとに分割して、接続金属板4cで接続されたセラミック支持基板2とともに取り除く。あるいは、枠状の接続金属板4cを切断してセラミック支持基板2を取り除いた後に、セラミック基板1を分割溝1aに沿って分割してセラミック基板1の端部1cを取り除いてもよい。予めセラミック基板1上に接合された接続金属板4cを分割溝1a上で切断しておいた方が、セラミック基板1を分割溝1aに沿って分割しやすいのでよい。   Next, the ceramic support substrate 2 is removed. In the example shown in FIG. 1, since the metal circuit 4a and the ceramic support substrate 2 are already separated, the metal circuit 4a and the like can be easily removed. The attached circuit board 6 can be obtained. When the frame-shaped connecting metal plate 4c is formed as in the example shown in FIG. 3, the ceramic substrate 1 is divided into the circuit board 6 with metal fittings and the end portion 1c of the ceramic substrate 1 along the dividing groove 1a. The ceramic support substrate 2 connected by the connection metal plate 4c is removed. Alternatively, after cutting the frame-shaped connecting metal plate 4c and removing the ceramic support substrate 2, the ceramic substrate 1 may be divided along the dividing groove 1a to remove the end 1c of the ceramic substrate 1. It is easier to divide the ceramic substrate 1 along the dividing groove 1a if the connecting metal plate 4c bonded on the ceramic substrate 1 is cut in advance on the dividing groove 1a.

金具付き回路基板6の金属回路板4aや放熱板5aの表面には、必要に応じてニッケルめっき等の良導電性で、かつ耐蝕性および半田との濡れ性が良好な皮膜を形成しておくと、金属回路板4aと外部電気回路との電気的接続を良好にすることができるとともに、金属回路板4aに半田を介して電子部品を強固に接着させることができる。   On the surface of the metal circuit board 4a and the heat sink 5a of the circuit board 6 with the metal fitting, a film having good conductivity such as nickel plating and having good corrosion resistance and good wettability with solder is formed as necessary. In addition, the electrical connection between the metal circuit board 4a and the external electric circuit can be improved, and the electronic component can be firmly bonded to the metal circuit board 4a via solder.

なお、本発明は上述の最良の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲で種々の変更を行なうことは何等差し支えない。例えば、2枚のセラミック基板1・1の間に金属板4や金属回路板4aを配置して接合し、その上下に金属回路板4aや放熱板5を接合するなど多層構造にして、剛性や放熱性を高めたり、小型にしたりしてもよい。   Note that the present invention is not limited to the above-described best mode, and various modifications may be made without departing from the scope of the present invention. For example, a metal plate 4 or a metal circuit board 4a is disposed between two ceramic substrates 1 and 1 and bonded, and a metal circuit board 4a or a heat sink 5 is bonded to the upper and lower sides thereof to form a multilayer structure. The heat dissipation may be increased or the size may be reduced.

(a)〜(e)は、それぞれ本発明の金具付き回路基板の製造方法の実施の形態の一例を示す斜視図である。(A)-(e) is a perspective view which shows an example of embodiment of the manufacturing method of the circuit board with a metal fitting of this invention, respectively. (a)および(b)は、それぞれ本発明の金具付き回路基板の製造方法の実施の形態の一例を示す断面図である。(A) And (b) is sectional drawing which shows an example of embodiment of the manufacturing method of the circuit board with a metal fitting of this invention, respectively. (a)〜(e)は、それぞれ本発明の金具付き回路基板の製造方法の実施の形態の一例を示す斜視図である。(A)-(e) is a perspective view which shows an example of embodiment of the manufacturing method of the circuit board with a metal fitting of this invention, respectively. (a)〜(e)は、それぞれ従来の金具付き回路基板の製造方法の実施の形態の一例を示す斜視図である。(A)-(e) is a perspective view which shows an example of embodiment of the manufacturing method of the conventional circuit board with a metal fitting, respectively.

符号の説明Explanation of symbols

1:セラミック基板
1a:分割溝
2:セラミック支持基板
3:接合材ペースト
3a:接合材
4:金属板
4a:金属回路板
4b:放熱板
4c:接続金属板
5:レジスト膜
6:金具付き回路基板
1: Ceramic substrate 1a: Dividing groove 2: Ceramic support substrate 3: Bonding material paste 3a: Bonding material 4: Metal plate 4a: Metal circuit board 4b: Heat sink 4c: Connection metal plate 5: Resist film 6: Circuit board with metal fittings

Claims (4)

セラミック基板およびセラミック支持基板を準備する工程と、
前記セラミック基板および前記セラミック支持基板を横に並べ、これらを挟むように金属板を上下に配置して、前記セラミック基板および前記セラミック支持基板の両主面に前記金属板を接合する工程と、
前記セラミック基板の少なくとも一方主面に接合された前記金属板が前記セラミック基板の外辺から突出した形状となるように、接合された前記金属板をエッチング加工して金具を形成する工程と、
前記セラミック支持基板を取り除く工程と
を含むことを特徴とする金具付き回路基板の製造方法。
Preparing a ceramic substrate and a ceramic support substrate;
Arranging the ceramic substrate and the ceramic support substrate horizontally, arranging the metal plates vertically so as to sandwich them, and bonding the metal plate to both main surfaces of the ceramic substrate and the ceramic support substrate;
Etching the joined metal plate to form a metal fitting so that the metal plate joined to at least one main surface of the ceramic substrate protrudes from the outer side of the ceramic substrate;
And a step of removing the ceramic support substrate.
一方主面側の前記セラミック基板と前記金属板との接合部から前記セラミック支持基板と前記金属板との接合部までの長さと、他方主面側の前記セラミック基板と前記金属板との接合部から前記セラミック支持基板と前記金属板との接合部までの長さとを同じにすることを特徴とする請求項1記載の金具付き回路基板の製造方法。 The length from the joint portion between the ceramic substrate on the one main surface side and the metal plate to the joint portion between the ceramic support substrate and the metal plate, and the joint portion between the ceramic substrate and the metal plate on the other main surface side 2. The method for manufacturing a circuit board with metal fittings according to claim 1, wherein the length from the ceramic support substrate to the joint portion of the metal plate is the same. 前記金属板を接合する工程と前記金属板をエッチング加工して金具を形成する工程との間に、前記セラミック基板と前記セラミック支持基板との間を樹脂で充填する工程を含むことを特徴とする請求項1または請求項2に記載の金具付き回路基板の製造方法。 A step of filling the space between the ceramic substrate and the ceramic support substrate with a resin between the step of joining the metal plates and the step of etching the metal plates to form a metal fitting is characterized. The manufacturing method of the circuit board with a metal fitting of Claim 1 or Claim 2. 前記金属板をエッチング加工して金具を形成する工程において、前記セラミック基板および前記セラミック支持基板の両方に接合された接続金属板を形成し、しかる後、該接続金属板を取り除く工程を含むことを特徴とする請求項1乃至請求項3のいずれかに記載の金具付き回路基板の製造方法。 The step of etching the metal plate to form a metal fitting includes the step of forming a connection metal plate joined to both the ceramic substrate and the ceramic support substrate, and then removing the connection metal plate. The method for manufacturing a circuit board with a metal fitting according to any one of claims 1 to 3.
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