JP2009099638A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve durability by eliminating cold stress to a conducting line of a semiconductor device connected by the conducting line by mounting a semiconductor element and a circuit board in an isolated state so as to reduce an effect of heat generation of the semiconductor element, on an integrated circuit controlling the semiconductor element. <P>SOLUTION: In the semiconductor device, the circuit board 100 is arranged substantially in parallel to a mounting surface of a bus bar 300 mounting the semiconductor device 200. The linear thermal expansion coefficient of a conductive wire 210 for connecting both is made substantially the same with that of the bus bar 300. Also, supports 310, 320 are used which are obtained by extending several points of the mounting surface of the bus bar 300 substantially vertically to the mounting surface. Thereby, the circuit board 100 is hierarchically supported and fixed to the bus bar 300. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device including an exothermic semiconductor element, and relates to a structure of a semiconductor device excellent in heat dissipation, mountability, high density, and durability.

A variety of semiconductor devices that perform various controls such as fuel injection control, ignition control, motor control, hydraulic pressure control, and power distribution control by using a switching function of a semiconductor element are mounted on vehicles such as automobiles.
In recent years, semiconductor devices are required to have higher reliability, higher power, higher frequency, smaller size, and the like in order to achieve higher functionality and faster response of these semiconductor devices.
For this reason, as these semiconductor elements, power devices such as power MOSFET (metal oxide field effect transistor), IGBT (insulated gate bipolar transistor), BSIT (bipolar mode electrostatic induction transistor) are used.
Many of these power devices generate heat during operation and may affect the performance and reliability of the control circuit. Therefore, various semiconductor devices including these heat generating semiconductor elements have various heat dissipation measures. Has been taken.

For example, Patent Document 1 discloses a printed board on which various electronic components including a heat-generating electronic component are mounted, and a bus bar that is in contact with an electronic component mounting surface of the printed board through an insulator having good thermal conductivity. An electronic component mounting structure characterized by comprising:
Further, Patent Document 2 includes a bus bar substrate, an FET for controlling the current of the current circuit, and an electronic circuit substrate for controlling the operation of the FET, and the electric connection in which the FET is disposed between the two substrates. A box is disclosed.
Further, in Patent Document 3, in a substrate housing box that houses a circuit board placed on the heat radiating portion and accommodated in a box body provided with a heat radiating portion, a first circuit board placed on the heat radiating portion; A mounting portion projecting from the peripheral wall of the box body in parallel to the first circuit board, and having a through screw hole formed thereon; and being placed on the mounting portion, the through screw In a state where the second circuit board having a through hole communicating with the hole and the second circuit board fixed to the mounting portion by being screwed with the through screw hole through the through hole, A board housing box is disclosed, wherein the board comprises a pressing screw that presses the first circuit board against the heat radiating section.

By the way, in recent years, in a glow plug for warming up a diesel engine, the resistance has been lowered in order to increase the temperature at a high speed at the time of start-up. By means of (width modulation) control, the glow plug is always energized as well as at the start.
For this reason, a GCU (glow plug controller) that controls a glow plug needs to pass a large current of several tens of A. A power MOSFET is mounted as a switching element, and stable input / output of a large current and high heat dissipation are achieved. A combined GCU structure is desired.

For example, the conventional GCU 10x as shown in FIGS. 7A and 7B controls the power MOSFET 200x and the power supply to the glow plug (not shown) by controlling the opening and closing of the power MOSFET 200x according to a signal from the ECU (not shown). The control circuit board 100x including the integrated circuit 150x and the resin casing 500x for storing them are configured.
In the GCU 10x, by separating the heat-generating power MOSFET 200x and the control circuit board 100x, the influence of the heat from the power MOSFET 200x on the integrated circuit 150x is reduced. Further, by mounting the power MOSFET 200x on the metal bus bar 300x and connecting it to the drain terminal 211 provided on the back surface of the power MOSFET 200x, the bus bar 300x is used as a conduction circuit for supplying a large current to the power MOSFET 200x. In addition, it is used as a heat sink. Furthermore, a heat sink 400x is disposed on the bus bar 300x via an insulating adhesive layer 410x to further improve heat dissipation.
JP-A-5-67889 JP-A-10-35375 JP 2004-14690 A

  However, in the GCU 10x, the control circuit board 100x is fixed to the resin casing 500x by screws 170x. The drain terminal 210x, the source terminal 220x, and the gate terminal 230x of the power MOSFET 200x mounted on the bus bar 300x are: The control circuit board 100x is connected.

In general, the drain terminal 210x, the source terminal 220x, and the gate terminal 230x are made of copper or an alloy containing copper, and the TEC (Linear Thermal Expansion Coefficient) is slightly different depending on the material, but is 16 to 20 ppm. The TEC of the laminated board of copper and glass epoxy resin or polyamide used for the control circuit board is 20 ppm or less, which is substantially equivalent to copper.
On the other hand, a thermoplastic resin such as PPS (polyphenyl sulfide), PBT (polybutylene terephthalate), or the like is used for the casing 500x for convenience in molding. The TEC is about 50 to 60 ppm, which is larger than copper.

  Therefore, due to the difference between the TEC of the drain terminal 210x, the source terminal 220x, and the gate terminal 230x and the TEC of the casing 500x, the expansion and contraction of the terminals 210x, 220x, and 230x generated by the cold heat of the power MOSFET 200x and the expansion and contraction of the casing 500x. And there is a difference. As a result, a large thermal stress is generated in each of the terminals 210x, 220x, and 230x, leading to peeling of the soldered portion at the connection portion between the control circuit board 100x and each of the terminals 210x, 220x, and 230x, or the terminals 210x, 220x. , 230x itself may cause metal fatigue and break, and the reliability of the GCU 10x may be impaired.

  Therefore, in view of the above circumstances, the present invention has a new problem that cannot be solved by the conventional techniques such as those disclosed in Patent Documents 1 to 3, and a heat-generating semiconductor element and a control circuit unit that controls the semiconductor element are provided with heat-dissipating characteristics. In a semiconductor device in which the semiconductor element is placed in a separated state for improvement, and the semiconductor element and the control circuit unit are connected by a conductive line, the thermal stress on the conductive line is eliminated, and excellent heat dissipation is provided. An object of the present invention is to provide a semiconductor device having excellent durability.

  In the invention of claim 1, a semiconductor comprising at least a heat-generating semiconductor element, a metal bus bar for mounting the semiconductor element on a surface thereof, and a circuit board having an integrated circuit for controlling the operation of the semiconductor element. In the apparatus, the circuit board and the mounting surface of the bus bar are disposed so as to be substantially parallel to each other, and a linear thermal expansion coefficient of a conductive wire connecting the semiconductor element and the circuit board is obtained. The coefficient of expansion and the linear expansion coefficient of the circuit board are substantially the same, and support portions extending in a direction substantially perpendicular to the mounting surface are provided at a plurality of locations on the mounting surface of the bus bar, so that the circuit board is It is supported and fixed by the support part.

  According to the first aspect of the present invention, even if heat generation and cooling of the semiconductor element are repeated, the linear thermal expansion coefficients of the support portion and the conducting wire are substantially the same, and therefore the axial expansion and contraction of the support portion. Are always consistent, and it is difficult for the thermal stress in the vertical direction to occur with respect to the conductive line. In addition, since the coefficient of linear thermal expansion of the mounting surface of the bus bar, the conductive wire, and the circuit board is substantially the same, the horizontal expansion and contraction with respect to the mounting surface of the bus bar always coincides with each other. Therefore, horizontal heat stress is also unlikely to occur. Therefore, the durability of the semiconductor device in which the circuit board and the semiconductor element are arranged in a hierarchical structure to reduce the influence of the heat generation of the semiconductor element on the integrated circuit and the operational stability is improved further improves.

  According to a second aspect of the present invention, there is provided a casing made of an insulating resin that accommodates the semiconductor element, the bus bar, and the circuit board therein, and the circuit board is held away from the inner peripheral wall of the casing. .

  According to the invention of claim 2, since the semiconductor element and the circuit board are not subjected to any thermal stress accompanying thermal contraction of the casing, the durability of the semiconductor device is further improved.

  Specifically, as in the invention of claim 3, the bus bar is made of any metal material of copper, copper-zinc alloy, copper-tin alloy, copper-nickel alloy, copper-zinc-nickel alloy. It is desirable to form.

  According to invention of Claim 3, the linear thermal expansion coefficient of the said conducting wire, the said bus-bar, and the said circuit board can be made substantially the same. In addition, since these metal materials have high thermal conductivity and excellent heat dissipation, the semiconductor element can be quickly cooled. Further, these metal materials have a low resistance value and can easily supply a large current to the semiconductor element. Therefore, the durability and stability of the semiconductor device are further improved.

  In a fourth aspect of the invention, the plurality of semiconductor elements are mounted on the bus bar, and the bus bar and the plurality of semiconductor elements are made conductive.

  According to the invention of claim 4, a common potential can be supplied from the bus bar to the plurality of semiconductor elements. Since the bus bar can have a resistance value much lower than that of circuit formation on the substrate, it is easy to supply a large current to the semiconductor element. Therefore, the durability and stability of the semiconductor device are further improved. Further, since a plurality of semiconductor elements can be efficiently radiated by mounting them on one bus bar, the integration density can be increased and the semiconductor device can be further miniaturized.

  In a fifth aspect of the present invention, a heat sink made of a material having a high thermal conductivity is disposed on the surface side facing the mounting surface of the bus bar via an electrically insulating adhesive.

  According to the invention of claim 5, the heat released from the semiconductor element is released to the heat sink through the bus bar, and the semiconductor element is quickly cooled. The operation can be stabilized.

  According to a sixth aspect of the present invention, there is provided a glow plug control device for controlling energization to a glow plug provided for each cylinder of an internal combustion engine by switching the semiconductor element, and the semiconductor according to any one of the first to fifth aspects. Apply the device.

  According to the sixth aspect of the present invention, it is possible to realize a glow plug control device that is less susceptible to thermal stress on the conductive wire of the semiconductor element and has excellent durability.

A semiconductor device 10 will be described with reference to FIG. 1 as a first embodiment of the present invention. The bus bar 300 is formed on a flat plate using a metal material such as copper or an alloy of copper and nickel. A heat-generating semiconductor element 200 that generates heat due to an on-current during operation is mounted on the surface.
The circuit board 100 includes an integrated circuit 150 for controlling the semiconductor element 200 and a passive component such as a resistor, a capacitor, and a coil mounted on a substrate such as a glass epoxy resin to form an input / output circuit and the like.
A plurality of locations on the outer peripheral edge of the bus bar 300 are extended as substantially support columns 310 and 320 in a substantially columnar shape extending in a direction substantially perpendicular to the mounting surface. The mounting surface of the bus bar 300 and the circuit board 100 are disposed substantially in parallel, and the circuit board 100 is supported and fixed so as to be in a hierarchical state with the bus bar 300 by the support portions 310 and 320.
The semiconductor element 200 is in a conductive state by a circuit formed on the circuit board 100 and a conductive line 210.

The TEC of copper and copper alloy used for the bus bar 300, the support portions 310 and 320, and the conducting wire 210 is about 16 to 20 ppm, and the TEC of the glass epoxy resin used for the circuit board 100 is 20 ppm or less.
Therefore, even if heat generation and cooling of the semiconductor element 200 are repeated, the TECs of the support portions 310 and 320 and the conducting wire 210 are substantially the same. A heat stress in the vertical direction is unlikely to occur with respect to the line 210.
Further, since the linear thermal expansion coefficients of the mounting surface of the bus bar 300, the conductive line 210, and the circuit board are substantially the same, the horizontal expansion and contraction with respect to the mounting surface of the bus bar 300 always coincides with each other. Horizontal heat stress is also unlikely to occur.
Therefore, the durability of the semiconductor device 10 in which the circuit board 100 and the semiconductor element 200 are arranged in a hierarchical structure to reduce the influence of heat generated by the semiconductor element 200 on the integrated circuit 150 and to improve the operational stability. Will improve.

The bus bar 300 and the support portions 310 and 320 are made of any metal material such as copper, an alloy of copper and zinc, an alloy of copper and tin, an alloy of copper and nickel, or an alloy of copper, zinc and nickel. Is preferably formed.
As the circuit board 100, it is desirable to use a laminate of glass epoxy resin and copper or a laminate of polyamide and copper.
In particular, when a power device that controls a large current, such as a power MOSFET (metal oxide field effect transistor), IGBT (insulated gate bipolar transistor), or BSIT (bipolar mode electrostatic induction transistor), is used as the semiconductor element 200. The effect of the present invention is great.
Further, in the present embodiment, an example in which the mounting surface of the bus bar 300 and the support portions 310 and 320 are integrally formed is shown. However, the two are not necessarily integrated, and the bus bar 300 and the conducting wire 210 are not necessarily integrated. If the plurality of support portions 310 and 320 are formed using a material having substantially the same linear thermal expansion coefficient, the effect of the present invention can be obtained even if the support portions 310 and 320 are formed of a member separate from the bus bar 300. Can demonstrate.

With reference to FIG. 2, a GCU 10 (glow plug control unit) will be described in detail as a semiconductor device according to the second embodiment of the present invention.
FIG. 2 is an exploded perspective view illustrating a configuration outline of a main part of the GCU 10.
A circuit described later is formed on the circuit board 100, and an integrated circuit 150, a shunt resistor 140, and the like are mounted thereon.
A power terminal 111 is insert-molded in the power connector section 110, an output terminal 121 is insert-molded in the output connector section 120, and an input terminal 131 is insert-molded in the input connector section 130.
The circuit board 100 has a power terminal insertion hole 112, an output terminal insertion hole 122, and an input terminal insertion hole 132.
The power supply terminal 111, the output terminal 121, and the input terminal 131 are inserted into the power supply terminal insertion hole 112, the output terminal insertion hole 122, and the input terminal insertion hole 132, respectively, and are electrically connected to the circuit formed on the circuit board 100 by soldering or the like. Has been.

A plurality of power MOSFETs 200 as semiconductor elements are mounted on the surface of the flat bus bar 300 and are fixed by solder foils 240, and are provided on the lower surface of the bus bar 300 and the power MOSFET 200 as a heat sink. And continuity. In the present embodiment, an example is shown in which four power MOSFETs 200 are mounted. However, the number of semiconductor elements to be mounted is not limited and can be changed as appropriate.
A drain terminal 210, a source terminal 220, and a gate terminal 230 extend vertically from the power MOSFET 200 as conduction lines connecting the power MOSFET 200 and the circuit board 100, and are formed in the circuit board 100. The circuit is inserted into the source terminal insertion hole 221 and the gate terminal insertion hole 231 and connected to a circuit formed on the surface of the circuit board 100. The power MOSFET 200 may be screwed to the bus bar 300 using screws 250.

Support portions 310, 320, and 330 are formed at three corners of the bus bar 300 so as to extend in a plate shape in a direction substantially perpendicular to the mounting surface of the bus bar 300.
The circuit board 100 is provided with support portion insertion holes 321 and 331, the support portion 310 is inserted into the power terminal insertion hole 112 together with the power terminal 111, and the support portions 320 and 330 are the support portion insertion holes 321, The circuit board 100 is supported and fixed so as to be in a substantially hierarchical state with respect to the mounting surface of the bus bar 300.
Therefore, also in the present embodiment, similarly to the above-described embodiment, the thermal stress acting on the drain terminal 210, the source terminal 220, and the gate terminal 230 that electrically connect the circuit board 100 and the power MOSFET 200 as conductive lines can be reduced. .

Further, by supporting the support portions 310, 320, and 330 provided at the three corners of the bus bar 300, the circuit substrate 100 can be stably supported even when the circuit substrate 100 is warped. Can be fixed.
In addition, by supporting three points, one of the corners of the circuit board 100 and the bus bar 300 is not constrained, so both the circuit board 100 and the bus bar 300 can release distortion caused by heat shrinkage. The thermal stress acting on the drain terminal 210, the source terminal 220, and the gate terminal 230 can be further alleviated. .

  In addition, the outer periphery where the support part 310 is formed and the outer periphery where the support parts 320 and 330 are formed are orthogonal to each other. For this reason, the support part 310 and the support parts 320 and 330 mutually reinforce the rigidity, and the support rigidity against external force such as vibration is enhanced. Therefore, the durability of the GCU 10 is further improved.

  The support 310 is electrically connected to the power supply terminal 111 and can supply a common power supply potential to the plurality of power MOSFETs 200.

  A heat sink 400 is bonded to the lower surface of the bus bar 300 facing the mounting surface via an adhesive 410 having good thermal conductivity and electrical insulation. The heat sink 400 is formed using a metal material or the like having a high thermal conductivity such as aluminum, and improves heat dissipation from the power MOSFET 200.

Since the bus bar 300 can have a resistance value much lower than that of the circuit formation on the circuit board 100, it is easy to supply a large current to the power MOSFET 200.
In addition, since the power input circuit is formed by the bus bar 300, it is not necessary to form the power input circuit on the circuit board 100, so that the area occupied by the output circuit can be increased and a large current can easily flow. Therefore, further improvement in durability and stability of the GCU 10 can be expected. Furthermore, since a plurality of power MOSFETs 200 are mounted on one bus bar 300, heat can be efficiently radiated, so that the integration density can be increased and the GCU 10 can be reduced in size.

3 shows details of the assembled state of the GCU 10, (a) is a schematic plan view, and (b) is a cross-sectional view. Note that the circuit pattern of the circuit board 100 shown in this drawing is schematic and does not limit the actual circuit.
The bus bar 300 on which the power MOSFET 200 is mounted and the circuit board 100 including the integrated circuit 150 are housed in a housing 500 made of an insulating resin. Further, the lower end of the housing 500 is fixed to the heat sink 400.
A gap is provided between the outer peripheral edge of the circuit board 100 and the inner peripheral wall of the housing 500, so that the circuit board 100 is not affected by the thermal contraction of the housing 500.

The power supply terminal 111 and the support portion 310 of the bus bar 300 are inserted into the power supply terminal insertion hole 112 of the circuit board 100 and connected to the electrode pattern 113 formed on the surface of the circuit board 100.
The output terminal 121 is inserted into the output terminal 122 of the circuit board 100 and connected to one end of the circuit pattern 123 formed on the surface of the circuit board 100, and the other end of the circuit pattern 123 has a predetermined resistance value. One end of the shunt resistor 140 is connected. The other end of the shunt resistor 140 is connected to the source terminal 220 of the power MOSFET 200 via the circuit pattern 222.
A circuit 141 is formed on the upstream side of the shunt resistor 140, and a circuit 142 is formed on the downstream side, which are respectively connected to predetermined positions in the input / output terminals 151 of the integrated circuit 150, and the voltage drop of the shunt resistor 140 is reduced. The current value output from the source terminal 220 can be measured.

The drain terminal 210 of the power MOSFET 200 is connected to the lower surface drain terminal 211 inside the power MOSFET 200.
The drain terminal 210 is inserted into a drain terminal insertion hole 211 formed in the circuit board 100, and further connected to one end of a circuit pattern 212 formed on the surface of the circuit board 100. The other end of the circuit pattern 212 is an integrated circuit. The power supply voltage supplied to the drain terminal 210 can be measured by being connected to a predetermined terminal among the 150 input / output terminals 151.
The input terminal 131 is inserted into an input terminal insertion hole 132 formed in the circuit board 100 and connected to one end of the circuit pattern 133. The other end of the circuit pattern 133 is a predetermined input / output terminal 151 of the integrated circuit 150. A signal from an unillustrated ECU provided outside is input to the integrated circuit 150.

FIG. 4 shows an equivalent circuit of the glow plug energization control device 1 using the GCU 10 according to the second embodiment of the present invention.
The internal combustion engine (not shown) includes a plurality of cylinders, and a glow plug 70 is provided for each cylinder. Energization from the power supply 90 to the glow plug 70 is controlled by switching of the power MOSFET 200. Since the number of cylinders can be changed as appropriate, it is indicated by n in the figure.
The power MOSFET 200 is ON / OFF controlled by the integrated circuit 150 in accordance with an energization command from the ECU 80.
The energization of the glow plug 70 is PWM (pulse width modulation) controlled by the integrated circuit 150 in accordance with the combustion state of the internal combustion engine.

The effect of the present invention will be described with reference to FIG. This figure (a) is sectional drawing of GCU10 in the 2nd Embodiment of this invention as Example 1, and this figure (b) is sectional drawing of GCU10x of the conventional structure as Comparative Example 1. FIG.
As shown in FIG. 5A, even if heat generation and cooling of the power MOSFET 200 are repeated, the TECs of the support portions 310, 320, and 330 and the conductive wires 210, 220, and 230 are substantially the same. , 320 and 330 always coincide with each other in the axial direction, and it is difficult for the vertical and vertical thermal stresses to occur on the conductive wires 210, 220 and 230.
Further, since the TEC of the mounting surface of the bus bar 300 and the conductive lines 210, 220, 230 and the circuit board 100 are substantially the same, the horizontal expansion and contraction with respect to the mounting surface of the bus bar 300 always coincides with each other. It is also difficult for thermal stress in the horizontal direction to occur with respect to 220 and 230.
Furthermore, since the circuit board 100 and the power MOSFET 200 are separated from the casing 500 and the casing lid 510, the circuit board 100 and the power MOSFET 200 are not subjected to any thermal stress accompanying thermal contraction of the casing 500 and the casing lid 510.
Accordingly, the circuit board 100 and the power MOSFET 200 are arranged in a hierarchical structure so that the influence of heat generated by the power MOSFET 200 on the integrated circuit 150 is reduced, and the durability of the GCU 10 is expected to improve the operational stability. it can.

On the other hand, as shown in FIG. 7B, in the GCU 10x having the conventional structure, the circuit board 100x is fixed to the housing 500x with screws 170x.
Accordingly, since the difference between the TEC of the casing 500x and the casing lid 510x and the TEC of the circuit board 100x is large, the circuit board 100x is pulled by the thermal contraction of the casing 500x and the casing lid 510x, and the conductive wires 210x, 220x. , 230x is subjected to a large thermal stress, which may cause breakage of the conductive wires 210x, 220x, and 230x and peeling of the solder portion.

FIGS. 6A, 6B, 6C, and 6D show examples of the shape of the bus bar, which is the main part of the present invention. In the above embodiment, the example in which the support portions 310, 320, and 330 of the bus bar 300 are provided at the corners has been shown. However, the positions of the support portions 310a, 320a, and 330a are appropriately changed as in the bus bar 300a shown in FIG. Is possible. Further, like the bus bar 300b shown in FIG. 5B, the support portions 310b and 320b may be formed in a bent shape having a substantially L-shaped cross section to increase the support rigidity. Furthermore, in the above-described embodiment, the example in which the bus bar 300 is provided in a rectangular shape has been described. However, the bus bar 300 may be provided in a different shape according to the usage pattern, as in the bus bar 300c illustrated in (c). In the above embodiment, the support portions 310, 320, and 330 are formed by extending a plurality of locations on the outer peripheral edge of the bus bar 300 in a strip shape that extends outward, and causing this to occur vertically. Like the bus bar 300d shown in FIG. 3, the support portions 310d, 320d, and 330d of the flat bus bar 300d may be rolled so as to project in a low columnar shape in the vertical direction by pressing or the like.
In the above embodiment, the bus bar 300 and the circuit board 100 are connected by inserting the tips of the support portions 310, 320, and 330 into the insertion holes 112, 321, and 331 formed in the circuit board 100. 320, 330 may be provided with a bent portion, and a screw hole may be provided in the bent portion so that the circuit board 100 is screwed.

  The present invention is not limited to the above-described embodiment, and the semiconductor element to be used, the function, shape, etc. of the integrated circuit can be appropriately changed according to the use and function of the semiconductor device without departing from the spirit of the present invention. For example, the present invention can be applied to a semiconductor device that performs various controls such as fuel injection control, ignition control, motor control, hydraulic pressure control, and power distribution control using a switching function of a semiconductor element.

These are principal part sectional drawings of the semiconductor device in the 1st Embodiment of this invention. These are the disassembled perspective views which show the structure outline | summary of the glow plug controller in the 2nd Embodiment of this invention. These show the detail of the glow plug controller in the 2nd Embodiment of this invention, (a) is the top view, (b) is the sectional drawing. These are equivalent circuit diagrams which show the whole structure of the glow plug control system using the glow plug controller in the 2nd Embodiment of this invention. (A) is principal part sectional drawing which shows the effect in the 2nd Embodiment of this invention, (b) is sectional drawing which shows the problem of the glow plug controller of a conventional structure as a comparative example. (A), (b), (c), (d) is a perspective view which shows the example of a shape of the bus-bar in other embodiment of this invention. These show the detail of the conventional glow plug controller, (a) is the top view, (b) is the sectional drawing.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Semiconductor device 100 Circuit board 150 Integrated circuit 200 Semiconductor element 210 Conduction line 300 Bus bar 310,320 support part

Claims (6)

In a semiconductor device comprising at least a heat-generating semiconductor element, a metal bus bar for mounting the semiconductor element on a surface thereof, and a circuit board having an integrated circuit for controlling the operation of the semiconductor element,
Arranged so that the circuit board and the mounting surface of the bus bar are substantially parallel,
The linear thermal expansion coefficient of the conducting wire connecting the semiconductor element and the circuit board, the linear thermal expansion coefficient of the bus bar, and the linear expansion coefficient of the circuit board are substantially the same,
A semiconductor device comprising: a plurality of support portions extending in a direction substantially perpendicular to the mounting surface at a plurality of locations on the mounting surface of the bus bar, and the circuit board being supported and fixed by the supporting portion.   2. The semiconductor according to claim 1, further comprising a housing made of an insulating resin that accommodates the semiconductor element, the bus bar, and the circuit board therein, and holding the circuit board apart from an inner peripheral wall of the housing. apparatus.   3. The semiconductor device according to claim 1, wherein the bus bar is formed using any metal material of copper, a copper-zinc alloy, a copper-tin alloy, a copper-nickel alloy, and a copper-zinc-nickel alloy.   4. The semiconductor device according to claim 1, wherein the plurality of semiconductor elements are mounted on the bus bar, and the bus bar and the plurality of semiconductor elements are electrically connected. 5.   5. The semiconductor device according to claim 1, wherein a heat sink made of a material having high thermal conductivity is disposed on a surface side facing the mounting surface of the bus bar via an electrically insulating adhesive. .   6. The semiconductor device according to claim 1, which is applied to a glow plug control device that controls energization to a glow plug provided for each cylinder of an internal combustion engine by switching of the semiconductor element.

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