JP2009088974A - Device and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent a decrease in yields, and to provide a reliable device and electronic equipment. <P>SOLUTION: The device has a first functional device having a first region in which a first terminal is provided, and a second functional device having a second region in which a second terminal connected to the first one is provided. In the device, the area of the first functional device is smaller than that of the second one in a plan view, and the area of the first region is smaller than that of the second one in a plan view. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a device and an electronic apparatus.

In recent years, a piezoelectric oscillator in which a piezoelectric vibrator such as a crystal vibrator and a semiconductor device including an oscillation circuit are integrally joined is known. The semiconductor device has a configuration in which terminals are formed on both surfaces of a semiconductor substrate such as silicon. The terminal provided on one surface of the semiconductor substrate is a terminal connected to the piezoelectric vibrator by, for example, solder, and the terminal provided on the other surface of the semiconductor substrate is an external terminal (for example, Patent Document 1). reference).
JP 2004-15444 A

  However, when the solder is melted during reflow, the solder may spread on the electrodes of the piezoelectric element body. In the above configuration, the semiconductor device moves and the position of the semiconductor device relative to the piezoelectric element body shifts accordingly. There is a risk of it. As a result, there is a problem that the yield decreases.

  In view of the circumstances as described above, an object of the present invention is to provide a highly reliable device and electronic apparatus while preventing a decrease in yield.

  In order to achieve the above object, a device according to the present invention has a first functional element having a first region in which a first terminal is provided and a second region in which a second terminal connected to the first terminal is provided. A device having a second functional element, wherein the first functional element has a larger area in plan view than the second functional element, and the second region has a larger area in plan view than the first region. It is large.

  According to the present invention, in the first functional element having a large area in plan view, the first region as the first terminal forming area is small, and in the second functional element having a small area in plan view, the second terminal forming area. Since the second region is large, misalignment due to self-alignment can be suppressed when connecting the first terminal and the second terminal. Thereby, since a position shift can be prevented between the first functional element and the second functional element, a decrease in yield can be prevented, and a highly reliable device can be obtained.

In the device, a plurality of the first terminals and the second terminals are provided, the first terminals and the second terminals are connected by solder, and the plurality of first terminals are planar. Each of the plurality of second terminals has the same size in plan view, and the same size in plan view.
According to the present invention, a plurality of first terminals and second terminals are provided, the first terminals and the second terminals are connected by solder, and the plurality of first terminals have dimensions in plan view, respectively. Since the plurality of second terminals have the same size in plan view, the difference in cohesive force for each terminal due to the difference in solder amount when connecting the first terminal and the second terminal is reduced. It is possible to prevent the positional deviation between the first functional element and the second functional element more effectively.

In the device, a plurality of the first terminals and the second terminals are provided, and the plurality of first terminals are regions of the first functional element that overlap the second functional element in plan view. The second terminals are arranged symmetrically with respect to a center position, and the plurality of second terminals are arranged symmetrically with respect to a center position in plan view of the second functional element. And
According to the present invention, a plurality of first terminals and a plurality of second terminals are provided, and the plurality of first terminals are symmetrical with respect to the center position of the region where the second functional elements of the first functional elements overlap in plan view. Since the plurality of second terminals are arranged so as to be symmetrical with respect to the center position of the second functional element in plan view, the second terminal on the first functional element is arranged. It is possible to prevent the mounting position of the bifunctional element and the first region in which the first terminal is provided from being greatly shifted. Thereby, position shift between the 1st functional element and the 2nd functional element can be prevented.

In the above device, the first terminal and the second terminal are connected by solder,
At least one of the first terminal and the second terminal is characterized in that the end portion in the cross-sectional view is thicker than the central portion in the cross-sectional view.
According to the present invention, since at least one of the first terminal and the second terminal is thicker at the end portion in cross-sectional view than at the central portion in cross-sectional view, the spread of solder on the terminal is suppressed. Can do. Thereby, the shift | offset | difference between a 1st terminal and a 2nd terminal can be suppressed.

  The device according to the present invention includes a first functional element having a first region in which a first terminal is provided, and a second functional element having a second region in which a second terminal electrically connected to the first terminal is provided. The first functional element is mounted on the first surface of the substrate, and the second functional element is mounted on the second surface opposite to the first surface of the substrate, The first surface of the substrate is provided with a third region having a third terminal connected to the first terminal, and the second surface of the substrate is connected to the second terminal and is connected to the second terminal. A fourth region having a fourth terminal connected to the third terminal is provided, the substrate has a larger area in plan view than the first functional element and the second functional element, the first region, The area is larger in plan view than the third region, and the second region is larger than the fourth region. Characterized in that a large area in plan view.

  According to the present invention, the first functional element and the second functional element having a small area in plan view are connected to the substrate having a large area in plan view. The handling property is improved as compared with the case of directly joining. In addition, the terminal formation regions (first region and second region) of the first functional element and the second functional element having a smaller area than the terminal formation regions (third region and fourth region) of the substrate having a large area. Since the area is large, the self-alignment effect can be enhanced. Thereby, the shift | offset | difference at the time of a connection can be suppressed.

In the device, a plurality of the first terminal, the second terminal, the third terminal, and the fourth terminal are provided, and the first terminal and the third terminal are connected by solder. The second terminal and the fourth terminal are connected by solder, the plurality of first terminals have the same dimensions in plan view, and the plurality of second terminals have dimensions in plan view. The plurality of third terminals have the same size in plan view, and the plurality of fourth terminals have the same size in plan view.
According to the present invention, a plurality of first terminals, second terminals, third terminals, and fourth terminals are provided, and the first terminal and the third terminal, the second terminal and the fourth terminal, Since the dimensions of the first terminals, the second terminals, the third terminals, and the fourth terminals in plan view are equal to each other because they are connected by solder, the first terminal and the third terminal, The difference in the cohesive force of each terminal due to the difference in solder amount when connecting the second terminal and the fourth terminal can be reduced, and the positional deviation between the first functional element and the second functional element is more effective. Can be prevented.

In the device, a plurality of the first terminals, the second terminals, the third terminals, and the fourth terminals are provided, and the plurality of first terminals is a center of the first functional element in a plan view. The plurality of second terminals are arranged so as to be symmetrical with respect to a center position in plan view of the second functional element, and the plurality of second terminals are arranged symmetrically with respect to the position. The third terminal is disposed so as to be symmetric with respect to a center position of a region of the substrate that overlaps the first functional element in plan view, and the plurality of fourth terminals are the substrate of the substrate. The second functional element is arranged so as to be symmetric with respect to the center position of a region overlapping in plan view.
According to the present invention, a plurality of first terminals, second terminals, third terminals, and fourth terminals are provided, and the plurality of first terminals are symmetrical with respect to the center position in plan view of the first functional element. The plurality of second terminals are arranged symmetrically with respect to the center position in plan view of the second functional element, and the plurality of third terminals are the first functional element of the substrate. Are arranged symmetrically with respect to the center position of the region overlapping in plan view, and the plurality of fourth terminals are symmetrical with respect to the center position of the region overlapping with the second functional element of the substrate in plan view. Therefore, it is possible to prevent the mounting position of the first functional element on the first surface of the substrate and the first region from being greatly shifted, and the second function on the second surface of the substrate. It is possible to prevent the mounting position of the element and the second region from being greatly shifted. . Thereby, the position shift between a 1st functional element and a 2nd functional element, and a board | substrate can be prevented.

In the above device, the first terminal, the third terminal, and the second terminal and the fourth terminal are connected by solder, and the first terminal, the second terminal, and the third terminal are connected. In addition, at least one of the fourth terminals is characterized in that the end portion in the cross-sectional view is thicker than the central portion in the cross-sectional view.
According to the present invention, at least one of the first terminal, the second terminal, the third terminal, and the fourth terminal is thicker at the end portion in cross-sectional view than at the central portion in cross-section. The spread of solder on the terminal can be suppressed. Thereby, the gap between the first terminal and the third terminal or the gap between the second terminal and the fourth terminal can be suppressed.

In the above device, the first functional element is a circuit element having an oscillation circuit, and the second functional element is a piezoelectric element having a piezoelectric vibrator.
According to the present invention, the piezoelectric element having a large area in plan view has a small second area as the second terminal forming area, and the circuit element having a small area in plan view has the first terminal forming area as the first terminal. Since the area is large, misalignment due to self-alignment can be suppressed when connecting the first terminal and the second terminal. As a result, it is possible to prevent displacement between the circuit element and the piezoelectric element, and it is possible to prevent a decrease in yield.

In the above device, the first functional element is a piezoelectric element having a piezoelectric vibrator, and the second functional element is a circuit element having an oscillation circuit.
According to the present invention, in the circuit element having a large area in plan view, the second area as the second terminal forming area is small, and in the piezoelectric element having a small area in plan view, the first terminal forming area. Since the area is large, misalignment due to self-alignment can be suppressed when connecting the first terminal and the second terminal. As a result, it is possible to prevent displacement between the piezoelectric element and the circuit element, and it is possible to prevent a decrease in yield.

An electronic apparatus according to the present invention includes the above-described device.
According to the present invention, since a highly reliable device is mounted, a high-quality electronic device can be obtained.

  Embodiments of the present invention will be described with reference to the drawings. In each drawing used for the following description, the scale of each member is appropriately changed in order to make each member a recognizable size.

[First Embodiment]
FIG. 1 is a cross-sectional view showing a configuration of a piezoelectric oscillator (device) according to the present embodiment.
As shown in the figure, the piezoelectric oscillator 90 includes a semiconductor device (second functional element) 5 and a piezoelectric vibrator (first functional element) 97, and the semiconductor device 5 and the piezoelectric vibrator 97 are integrated. It has become a structured.

(Semiconductor device)
The semiconductor device 5 includes a semiconductor substrate 10, a wafer level CSP layer 30, bumps 37, and connection terminals (second terminals) 54.
The semiconductor substrate 10 is a plate-like member made of, for example, silicon. The semiconductor substrate 10 is provided with a conductive portion 12 that penetrates the front surface 10 a and the back surface 10 b of the semiconductor substrate 10. The conductive portion 12 is made of a highly conductive material such as copper (Cu), tungsten (W), aluminum (Al), or polysilicon. The front surface 10 a side and the back surface 10 b side of the semiconductor substrate 10 are electrically connected by the conductive portion 12. An insulating film (not shown) is formed between the conductive portion 12 and the semiconductor substrate 10. The conductive portion 12 may have a configuration formed along the side surface of the semiconductor substrate 10 in addition to the configuration penetrating the semiconductor substrate 10 as described above.

A base layer 21, an electrode 22, an electrode 23, and a first insulating layer 24 are provided on the surface 10 a side of the semiconductor substrate 10.
The underlayer 21 is made of an insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (Si ₃ N ₄ ). A plurality of predetermined regions of the base layer 21 are provided with electrodes 22 and 23, respectively, and a first insulating layer 24 is provided in a region other than the region where the electrodes 22 and 23 are provided. An opening is provided in a portion of the base layer 21 that overlaps the conductive portion 12 in plan view, and the conductive portion 12 is exposed on the surface of the base layer 21. An integrated circuit (not shown) having, for example, a transistor and a memory element is formed on the surface of the base layer 21, and the oscillation circuit 50 is configured by this integrated circuit. The oscillation circuit 50 is electrically connected to the electrode 22 and the electrode 23 via a wiring (not shown). Examples of the material of the electrode 22 and the electrode 23 include titanium (Ti), titanium nitride (TiN), aluminum (Al), copper (Cu), and alloys containing these. The electrode 23 is provided so as to cover the opening of the base layer 21, and a part of the electrode 23 is exposed to the opening. The electrode 23 is electrically connected to the end portion 12 a on the surface 10 a side of the semiconductor substrate 10 in the conductive portion 12.

  The wafer level CSP layer 30 is formed on the first insulating layer 24 and has a first wiring 31, a metal film 32, a second insulating layer 33, a second wiring 34, and a third insulating layer. The first wiring 31 is electrically connected to the electrode 22. The metal film 32 is provided on the surface of the electrode 23. The second insulating layer 33 is provided so as to cover the first wiring 31 and the metal film 32. The second wiring 34 is formed on the second insulating layer 33 and is electrically connected to the first wiring 31. The third insulating layer 35 is formed on the second wiring 34. A part of the first wiring 31 is exposed to the second insulating layer 33, and a land portion 36 is formed in this exposed portion. The land portion 36 is electrically connected to the second wiring 34. The third insulating layer 35 is provided so as to cover a region other than the region where the bumps 37 are formed on the second insulating layer 33 and the second wiring 34. As a material of the metal film 32, metals such as Au, TiW, Cu, Cr, Ni, Ti, W, NiV, and Al can be used. The metal film 32 can also be formed by stacking these metals. The metal film (at least one layer in the case of a laminated structure) 32 is preferably formed using a material having higher corrosion resistance than the electrode, for example, Au, TiW, or Cr.

  The bump 37 is an external terminal provided on the second wiring 34 of the wafer level CSP layer 30 and is made of, for example, a solder ball. The bumps 37 are electrically connected to the external substrate P. The bump 37 is electrically connected to the electrode 22 via the first wiring 31 and the second wiring 34.

  A plurality of connection terminals 54 are provided on the back surface 10 b of the semiconductor substrate 10. The area of each connection terminal 54 in plan view is substantially equal. Each connection terminal 54 is connected to an end portion 12 b on the back surface 10 b side of the semiconductor substrate 10 in the conductive portion 12, and the electrode 23 and the connection terminal 54 are electrically connected by the conductive portion 12. The sizes of the opposing regions of these two terminals are substantially the same. As shown in FIG. 1, the connection terminal 54 is formed in a concave shape (concave shape) in which a central portion in the left-right direction in the drawing is recessed with respect to an end portion in the left-right direction in the drawing.

(Piezoelectric vibrator)
The piezoelectric vibrator 97 includes a crystal vibrator 91, a support substrate 92, a sealing member 93, an extraction electrode 94, and a connection terminal (first terminal) 3, and is disposed at a position overlapping the semiconductor device 5 in plan view. ing. The area of the piezoelectric vibrator 97 in plan view is larger than the area of the semiconductor device 5 in plan view.

  The crystal unit 91 is held by a support substrate 92. The support substrate 92 is a plate-like member formed of glass, quartz, or the like. The sealing member 93 is made of, for example, glass or quartz, and seals the support substrate 92 and the crystal resonator 91. An internal space 95 surrounded by the inner surface 92a of the support substrate 92 and the inner surface 93a of the sealing member 93 is formed, and the internal space 95 is substantially sealed (air-tightly sealed). A plurality of extraction electrodes 94 are provided on the surface of the sealing member 93 facing the semiconductor device 5. The connection terminal 3 is provided at the tip of each extraction electrode 94. A solder part 7 is formed between the connection terminal 3 and the connection terminal 54 of the semiconductor device 5, and the connection terminal 3 and the connection terminal 54 are electrically connected by the solder part 7.

  A filling member 96 is provided between the piezoelectric vibrator 97 and the semiconductor device 5. The filling member 96 is made of, for example, a resin material such as an epoxy resin, an acrylic resin, a phenol resin, or a silicone resin, and seals between the piezoelectric vibrator 97 and the semiconductor device 5. The filling member 96 is provided so as to protrude from the region outside the semiconductor device 5 in plan view. A portion (a protruding portion) 96 a that protrudes outside the semiconductor device 5 is provided so as to cover a part of the side surface 10 c of the semiconductor substrate 5, and the surface of the protruding portion 96 a extends from the side surface 10 c of the semiconductor device 10 to the piezoelectric vibrator. It is inclined toward the surface 92 a of the support substrate 92 of 97. Since the protruding portion 96 a covers the side surface 10 c of the semiconductor substrate 10, impurities such as moisture are less likely to enter the piezoelectric oscillator 90.

FIG. 2 is a plan view of the piezoelectric oscillator 90 as viewed from the piezoelectric vibrator 97 side.
As shown in the figure, the area of the semiconductor device 5 in plan view is smaller than the area of the piezoelectric vibrator 97 in plan view. The second region 81 in the semiconductor device 5 where the connection terminal 54 is provided has a larger area in plan view than the first region 82 in the piezoelectric vibrator 97 where the connection terminal 3 is provided.

  The two connection terminals 54 of the semiconductor device 5 have substantially the same area in plan view, and are symmetrical with respect to the center position Q of the region of the semiconductor device 5 that overlaps the piezoelectric vibrator 97 in plan view. Has been placed. The two connection terminals 3 of the piezoelectric vibrator 97 have substantially the same area in plan view, and are arranged so as to be symmetric with respect to the center position R in plan view of the piezoelectric vibrator 97. The center position Q and the center position R may coincide with each other.

FIG. 3 is a cross-sectional view showing a connection structure between the connection terminal 54 and the connection terminal 3.
As shown in the figure, the connection terminal 54 is thicker at the end portion 54b in cross-sectional view than at the central portion 54a in cross-section. For this reason, the spread of the solder portion 7 on the connection terminal 54 in the left-right direction in the drawing is suppressed. The solder portion 7 has a shape in which the solder flow out to the outside is suppressed by the concave shape of the connection terminal 54. For this reason, the configuration is effective in suppressing the positional deviation of the parts due to the solder flowing out. Although the case where the connection terminal 54 of the semiconductor device 5 has a concave shape is shown in the present embodiment, the same applies to the case where the connection terminal 3 of the piezoelectric vibrator 97 has a concave shape as shown in FIG. In this case, the solder portion 7 is formed so as to cover a part of the side surface of the connection terminal 3 of the piezoelectric vibrator 97. Therefore, a shape in which the solder pulls the skirt between the side surface of the connection terminal 3 of the piezoelectric vibrator 97 and the connection terminal 54 of the semiconductor device 5 is realized, and the displacement is effectively suppressed by the agglomeration force of the molten solder at the time of mounting. be able to.

  Next, a method for manufacturing the piezoelectric oscillator 90 will be described with reference to FIGS. In the present embodiment, a method of simultaneously forming a plurality of semiconductor devices 5 on the silicon substrate 100 is adopted for manufacturing the semiconductor device 5. However, for simplicity, there is a case where one semiconductor device 5 is formed in each of the following drawings. It is shown.

  As shown in FIG. 4A, a wafer level CSP layer 30 is first formed on a semiconductor substrate 10. A base layer 21 is formed on the surface (active surface) 10 a of the semiconductor substrate 10, and an electrode 22 and an electrode 23 are formed on the base layer 21. After forming the electrode 22 and the electrode 23, a first insulating layer 24 is formed on the electrode 22 and the electrode 23, and the insulating material covering the electrode 22 and the electrode 23 is removed by a known photolithography method and etching method. The insulating material covering the electrode 23 is not necessarily removed.

  After removing the insulating material, the first wiring 31 is formed on the first insulating layer 24 including the electrode 22, and the metal film 32 is formed on the surface of the electrode 23. The first wiring 31 is formed, for example, by forming TiW and Cu in this order by sputtering, and then forming Cu by plating.

  After the formation of the metal film 32, a second insulating layer 33 is formed so as to cover the first wiring 31 and the metal film 32, and a part of the second insulating layer 33 is removed by a well-known photolithography method. A portion of 31 is exposed to form a land portion 36. After the land portion 36 is formed, the second wiring 34 is formed on the second insulating layer 33 so as to connect to the land portion 36, and the bumps 37 on the second insulating layer 33 and the second wiring 34 are formed. A third insulating layer 35 is provided so as to cover a region other than the region. Thus, the wafer level CSP layer 30 is formed.

  After the wafer level CSP layer 30 is formed, the front surface 10a side of the semiconductor substrate 10 is supported by the support member 200 made of a glass wafer via the adhesive layer 150 indicated by a two-dot chain line in FIG. As the support member 200, for example, a member having substantially the same size as that of the silicon substrate 100 is used. As the adhesive layer 150, it is desirable to use a curable adhesive such as a thermosetting adhesive or a photocurable adhesive.

  After the semiconductor substrate 10 is attached to the support member 200, the semiconductor substrate 10 is ground (back grind) from the back surface 10b side using a grinding member such as a grindstone, and the thickness is reduced to, for example, about 100 μm. The crushed layer formed on the substrate surface is removed by spin etching or dry polishing. CMP (chemical mechanical polishing) can also be used as a method for thinning the substrate.

  After grinding the semiconductor substrate 10 to a predetermined thickness, as shown in FIG. 4B, a photoresist 40 is formed on the back surface 10b of the semiconductor substrate 10, and the electrode 40 is applied to the electrode 23 by dry etching using the photoresist 40 as a mask. The semiconductor substrate 10 and the underlying layer 21 thus removed are removed. After removing the base layer 21, as shown in FIG. 4C, etching is performed from the back surface 10b of the semiconductor substrate 10 until the back surface of the electrode 23 provided on the front surface 10a is exposed, thereby forming the grooves 11.

  After the formation of the groove 11, as shown in FIG. 5A, the back surface insulating layer 14 and the insulating film 13 are formed on the back surface 10 b of the semiconductor substrate 10 and the inner wall of the groove 11. After the insulating film 13 is formed, the insulating film 13 provided on the back surface portion of the electrode 23 is subjected to dry etching or laser processing, and the insulating film 13 in this portion is removed. As shown in FIG. 5B, the insulating film 13 is provided only on the side wall of the groove 11. After the insulating film 13 in the trench 11 is removed, for example, TiW, TiN, and Ti are formed as a paria layer by sputtering, and then Cu is formed as a seed layer for subsequent electrochemical plating (ECP). Thereafter, the inside of the groove 11 is plated by an electrochemical plating method, a conductive material is disposed inside the groove 11 to form a conductive portion 12, and the lower end portion of the conductive portion 12 and the exposed electrode 23 are formed. Electrical connection is made on the back surface of the electrode 23.

  After forming the conductive portion 12, the connection terminal 54 is formed on the back surface 10b of the semiconductor substrate 10 by plating. As shown in FIG. 5C, the connection terminal 54 and the conductive portion 12 are electrically connected. By forming the connection terminal 54 by a plating method, the center portion is formed in a concave shape that is recessed with respect to the edge portion. If the width | variety of the opposing area | region of the connection terminal 54 is 300 micrometers-1 mm, the amount of dents will be 10-20 micrometers. After the connection terminal 54 is formed, solder 7 made of, for example, lead-free solder is mounted on the connection terminal 54 as shown in FIG. The solder 7 is formed with a thickness of 10 to 20 μm, for example.

  Thereafter, a dicing tape is applied to the back surface 10 b of the semiconductor substrate 10, while the support member 200 attached to the active surface 10 a of the semiconductor device 10 and the adhesive layer holding the support member 200 are removed. Thereafter, as shown in FIG. 6, the silicon wafer (substrate) 10 is diced (cut) for each semiconductor device 5 by the dicing device 110 and separated into individual pieces. Through such a process, most of the semiconductor device 5 shown in FIG. 1 is manufactured.

  On the other hand, in the piezoelectric vibrator 97, a plurality of crystal vibrators 91 are formed on a large glass wafer (an assembly of support substrates 92) 250, and each crystal vibrator 91 is hermetically sealed with a sealing substrate 93. After sealing the crystal unit 91, an extraction electrode 94 connected to the crystal unit 91 is formed on the sealing member 93. After the extraction electrode 94 is formed, the connection terminal 3 is patterned at the tip of the extraction electrode 94 so as to be approximately the same size as the connection terminal 54 of the semiconductor substrate 10. At this time, the area of the connection terminal 3 formation region (first region 82, see FIG. 2) is smaller than the area of the connection terminal 54 formation region (second region 81, see FIG. 2) of the semiconductor device 5. Pattern it like this.

  After the connection terminal 3 is formed, as shown in FIG. 7, flux or solder paste is supplied to the connection terminal 3 on the glass wafer 250 by printing, spin coating, dispensing, or the like, and the connection terminal 54 of the semiconductor device 5 is connected to the connection terminal 3. 3 is mounted on a glass wafer 250 so as to be separated from the semiconductor device 5. At this stage, the glass wafer 250 and the semiconductor device 5 are not heated, and the semiconductor device 5 is held on the glass wafer 250 by the adhesive force of flux or solder paste. After the semiconductor device 5 is mounted, the glass wafer 250 is heated by a heating means such as a reflow furnace or a hot plate. At this time, the heating temperature is a temperature at which the solder 7 is sufficiently dissolved (melted), and is preferably 240 ° C. or higher, for example.

  In the semiconductor element 5 having a small area in plan view, the second region 82 that is the formation region of the connection terminal 54 is large, and in the piezoelectric vibrator having a large area in plan view, the first region 81 that is the formation region of the connection terminal 3 is formed. Since it is small, when the solder part 7 is heated, the position shift due to self-alignment is suppressed. Further, since the thickness of the end portion 54b (see FIG. 3) in the cross-sectional view is thicker than the central portion 54a (see FIG. 3) in the cross-sectional view of the connection terminal 54, the solder portion 7 on the connection terminal 54 The spread will be suppressed. For this reason, the solder part 7 does not spread to the outside of the connection terminal 54, and is formed so as to gather in the recess of the connection terminal 54.

  After the heating, bumps 37 made of, for example, lead-free solder are mounted on the lands 36 formed on the surface 10a side of the semiconductor substrate 10. When the bumps 37 are provided, the solder ball may be mounted on the second wiring 34, the solder paste may be printed on the second wiring 34, or the solder coat formed by coating. The bumps 37 may be formed after the wafer level CSP layer is formed and before the adhesive layer 160 for attaching the support member 200 is provided. In that case, it is desirable to form the adhesive layer 150 to a thickness that covers the height of the formed terminal. As a method for forming the bump, a solder ball can be mounted, or a solder paste can be supplied by printing and formed by heating such as a reflow method. In that case, it is desirable to wash in order to remove the remaining flux.

  After the bumps 37 are formed, the flux or solder paste remaining around the joint between the connection terminal 3 on the glass wafer 250 and the connection terminal 54 of the semiconductor device 5 is washed, and the gap between the package body 97 and the semiconductor device 5 is sealed. Sealed with a stop resin 96. After sealing, as in the case where the silicon wafer 10 is danced, the glass wafer 250 is diced (cut) and divided to complete a plurality of piezoelectric oscillators 90 as shown in FIG.

  As described above, according to the present embodiment, in the semiconductor element 5 having a small area in plan view, the second region 82 that is the formation region of the connection terminal 54 is large, and in the piezoelectric vibrator having a large area in plan view, the connection terminal Since the first region 81, which is the formation region 3, is small, misalignment due to self-alignment is suppressed when the solder portion 7 is heated. Thereby, since it is possible to prevent positional deviation between the semiconductor device 5 and the piezoelectric vibrator 97, it is possible to prevent a decrease in yield and to obtain a highly reliable piezoelectric oscillator 90.

  Further, according to the present embodiment, the dimensions of the two connection terminals 54 in the plan view are equal to each other, and the dimensions of the two connection terminals 3 in the plan view are equal to each other. The difference in the cohesive force of each terminal due to the difference in the amount of the solder portion 7 when connecting the two can be reduced, and the positional deviation between the semiconductor device 5 and the piezoelectric vibrator 97 can be more effectively prevented. It becomes possible.

[Second Embodiment]
Next, a second embodiment of the present invention will be described. The present embodiment is different from the first embodiment in that a relay substrate is interposed between the semiconductor device and the piezoelectric vibrator. Other configurations, for example, the configurations of the semiconductor device and the piezoelectric vibrator are the first. This is the same as in the first embodiment.

FIG. 8 is a cross-sectional view showing the configuration of the piezoelectric oscillator 190 according to the present embodiment.
As shown in the figure, the piezoelectric oscillator 190 includes a semiconductor device 105, a piezoelectric vibrator 197, and a relay board 170, and the semiconductor device 105 and the piezoelectric vibrator 197 are mounted on the relay board 170. It has become. The piezoelectric vibrator 197 has a package structure in which a piezoelectric vibrating piece 197a is housed and sealed with a lid 197b.

  A connection terminal 172 is provided on the front surface (first surface) 170 a of the relay substrate 170, and a connection terminal 173 is provided on the back surface (second surface) 170 b of the relay substrate 170. The connection terminal 172 and the connection terminal 173 are electrically connected by a conductive portion 174 that penetrates the substrate 171.

  In the piezoelectric oscillator 190, the semiconductor device 105 is mounted on the front surface 170a of the relay substrate 170, and the piezoelectric vibrator 197 is mounted on the back surface 170b of the relay substrate 170. The connection terminal 172 of the semiconductor device 105 is connected to the connection terminal 172 by the solder part 107, and the connection terminal 103 of the piezoelectric vibrator 197 is connected to the connection terminal 173 by the solder part 108.

  The relay substrate 170 has a larger area in plan view than the semiconductor device 105 and the piezoelectric vibrator 197. The area of the second region 181 provided with the two connection terminals 154 in the semiconductor device 105 is larger in plan view than the fourth region 183 provided with the two connection terminals 172 out of the surface 170a of the relay substrate 170. ing. The first region 182 of the piezoelectric vibrator 197 where the two connection terminals 103 are provided has a larger area in plan view than the third region 184 of the back surface 170b of the relay substrate 170 where the two connection terminals 173 are provided. It has become.

  The connection terminals 154, the connection terminals 103, the connection terminals 172, and the connection terminals 173 have the same dimensions in plan view. The connection terminals 154 are arranged so as to be symmetric with respect to the center position in plan view of the semiconductor substrate 110. The connection terminal 154 is thicker at the cross-sectional end than at the cross-sectional center. The connection terminal 103 is disposed so as to be symmetric with respect to the center position of the piezoelectric vibrator 197 in plan view. The connection terminal 172 is disposed so as to be symmetric with respect to the center position of a region of the relay substrate 170 that overlaps the semiconductor device 105 in plan view. The connection terminal 173 is disposed so as to be symmetric with respect to the center position of a region of the relay substrate 170 that overlaps the piezoelectric vibrator 197 in plan view.

  A filling member 196 is provided between the relay substrate 170 and the semiconductor device 105. The filling member 196 is made of, for example, a resin material such as an epoxy resin, an acrylic resin, a phenol resin, or a silicone resin, and seals between the relay substrate 170 and the semiconductor device 105. The filling member 196 is provided so as to protrude from the region outside the semiconductor device 105 in plan view, and the surface of the protruding portion 196a is inclined from the side surface 110c of the semiconductor substrate 110 to the surface 170a of the relay substrate 170. The protruding portion 196 a is provided so as to cover a part of the side surface 10 c of the semiconductor substrate 110. Since the protruding portion 196 a covers the side surface 110 c of the semiconductor substrate 110, it is difficult for impurities such as moisture to enter the semiconductor device 105.

  Similarly, a filling member 198 is also provided between the relay substrate 170 and the piezoelectric vibrator 197. The filling member 198 is made of the same resin material as the filling member 196, and seals between the relay substrate 170 and the piezoelectric vibrator 197. The filling member 198 is provided so as to protrude from a region outside the piezoelectric vibrator 197 in plan view. A portion (protruding portion) 198 a that protrudes outside the piezoelectric vibrator 197 is provided so as to cover a part of the side surface 192 c of the support substrate 92, and the surface of the protruding portion 198 a is relayed from the side surface 192 c of the piezoelectric vibrator 197. The substrate 170 is inclined toward the back surface 170b. Since the protruding portion 198a covers the side surface 192c of the piezoelectric vibrator 197, impurities such as moisture are less likely to enter the piezoelectric vibrator 197.

  As described above, according to the present embodiment, the semiconductor device 105 having a small area in plan view and the piezoelectric vibrator 197 are connected to the relay substrate 170 having a large area in plan view. As compared with the case where the piezoelectric vibrator 197 and the piezoelectric vibrator 197 are directly joined, the handling property is improved. In addition, the second region 181 that is the formation region of the connection terminal 154 in the semiconductor device 105 has a larger area than the fourth region 183 that is the formation region of the connection terminal 172 in the relay substrate 170. Of these, the first region 182 that is the formation region of the connection terminal 103 of the piezoelectric vibrator 197 has a larger area than the third region 184 that is the formation region of the connection terminal 173, so that the self-alignment effect can be enhanced. Thereby, the shift | offset | difference at the time of a connection can be suppressed.

[Third Embodiment]
Next, a third embodiment of the present invention will be described. In the present embodiment, a mobile phone will be described as an example of an electronic device on which the piezoelectric oscillators 90 and 190 are mounted. FIG. 9 is a perspective view showing the configuration of the mobile phone 300.

The piezoelectric oscillators 90 and 190 are mounted on the mobile phone 300 in a state of being mounted on, for example, the printed wiring board P or the like.
Even in the cellular phone 300, the piezoelectric oscillators 90 and 190 can be mounted on the printed wiring board P or the like with high accuracy, so that the bonding quality is maintained in the electronic device including the piezoelectric oscillators 90 and 190. Thus, it is possible to obtain a high-quality electronic device that is small and thin. Note that various electronic devices such as a remote control such as a television and a digital camera can be used.

The technical scope of the present invention is not limited to the above-described embodiment, and appropriate modifications can be made without departing from the spirit of the present invention.
For example, in the embodiment described above, the configuration in which the area of the semiconductor device 5 in plan view is larger than the area of the piezoelectric vibrator 97 in plan view has been described. The area of the semiconductor device 5 in plan view may be larger than the area of the semiconductor device 5 in plan view.

  In this case, the connection terminal 54 of the semiconductor device 5 is arranged so as to be symmetrical with respect to the center position in plan view of the semiconductor device 5, and the connection terminal 3 of the piezoelectric vibrator 97 is the piezoelectric vibrator. 97 is preferably arranged so as to be symmetrical with respect to the center position of the region overlapping the semiconductor device 5 in plan view.

  Further, in the above embodiment, only the connection terminal 54 of the semiconductor device 5 has a configuration in which the thickness in the end portion 54b in the cross-sectional view is larger than that in the central portion 54a in the cross-sectional view. For example, as shown in FIG. 10, the connection terminal 3 of the piezoelectric vibrator 97 may have a configuration in which the thickness at the end portion 3b in the cross-sectional view is larger than that at the central portion 3a in the cross-sectional view. In this case, since the side surface 3c of the connection terminal 3 is covered with the solder portion 7, the positional displacement between the semiconductor device 5 and the piezoelectric vibrator 97 is effectively prevented by the agglomeration force of the molten solder at the time of mounting. be able to. Of course, both the connection terminal 54 of the semiconductor device 5 and the connection terminal 3 of the piezoelectric vibrator 97 may have a configuration in which the thickness of the end portion in the cross-sectional view is thicker than the central portion in the cross-sectional view.

1 is a cross-sectional view showing a configuration of a piezoelectric oscillator according to a first embodiment of the present invention. FIG. 3 is a plan view showing a configuration of a part of the piezoelectric oscillator according to the embodiment. FIG. 3 is a cross-sectional view showing the configuration of the piezoelectric oscillator according to the embodiment. Process drawing which shows the manufacture process of the piezoelectric oscillator which concerns on this embodiment. The process drawing. The process drawing. The process drawing. Sectional drawing which shows the structure of the piezoelectric oscillator which concerns on 2nd Embodiment of this invention. The perspective view which shows the structure of the mobile telephone which concerns on 3rd Embodiment of this invention. Sectional drawing which shows the other structure of the piezoelectric oscillator which concerns on this invention.

Explanation of symbols

P ... External substrate 3 ... Connection terminal (first terminal) 5 ... Semiconductor device (second functional element) 7 ... Solder portion 54 ... Connection terminal (second terminal) 81 ... First region 82 ... Second region 90 ... Piezoelectric oscillator (Device) 97 ... Piezoelectric vibrator (first functional element) 300 ... Mobile phone (electronic device)

Claims (11)

A device comprising a first functional element having a first region in which a first terminal is provided and a second functional element having a second region in which a second terminal connected to the first terminal is provided,
The first functional element has a larger area in plan view than the second functional element,
The device, wherein the second region has a larger area in plan view than the first region. A plurality of the first terminals and the second terminals are provided,
The first terminal and the second terminal are connected by solder,
2. The device according to claim 1, wherein the plurality of first terminals have the same dimensions in plan view, and the plurality of second terminals have the same dimensions in plan view. A plurality of the first terminals and the second terminals are provided,
The plurality of first terminals are arranged so as to be symmetrical with respect to a center position of a region of the first functional element that overlaps the second functional element in plan view,
The device according to claim 1, wherein the plurality of second terminals are arranged so as to be symmetric with respect to a center position in plan view of the second functional element. The first terminal and the second terminal are connected by solder,
At least one of the first terminal and the second terminal is thicker at the end portion in cross-sectional view than in the central portion in cross-sectional view. A device according to claim 1. A device comprising: a first functional element having a first region in which a first terminal is provided; and a second functional element having a second region in which a second terminal electrically connected to the first terminal is provided. ,
The first functional element is mounted on the first surface of the substrate;
The second functional element is mounted on a second surface opposite to the first surface of the substrate,
A third region having a third terminal connected to the first terminal is provided on the first surface of the substrate;
A fourth region having a fourth terminal connected to the second terminal and connected to the third terminal is provided on the second surface of the substrate,
The substrate has a larger area in plan view than the first functional element and the second functional element,
The first region has a larger area in plan view than the third region,
The second region has a larger area in plan view than the fourth region. A plurality of the first terminal, the second terminal, the third terminal, and the fourth terminal are provided,
The first terminal and the third terminal are connected by solder,
The second terminal and the fourth terminal are connected by solder,
The plurality of first terminals have the same size in plan view, the plurality of second terminals have the same size in plan view, the plurality of third terminals have the same size in plan view, The device according to claim 5, wherein the fourth terminals have the same dimensions in plan view. A plurality of the first terminal, the second terminal, the third terminal, and the fourth terminal are provided,
The plurality of first terminals are arranged so as to be symmetric with respect to a center position in plan view of the first functional element,
The plurality of second terminals are arranged so as to be symmetric with respect to the center position in plan view of the second functional element,
The plurality of third terminals are arranged so as to be symmetric with respect to a center position of a region of the substrate that overlaps the first functional element in plan view.
The plurality of fourth terminals are arranged so as to be symmetrical with respect to a center position of a region of the substrate that overlaps the second functional element in plan view. 6. The device according to 6. Between the first terminal and the third terminal and between the second terminal and the fourth terminal are connected by solder,
At least one of the first terminal, the second terminal, the third terminal, and the fourth terminal is thicker at the end portion in cross-sectional view than at the central portion in cross-sectional view. The device according to any one of claims 5 to 7. The first functional element is a circuit element having an oscillation circuit,
The device according to any one of claims 1 to 8, wherein the second functional element is a piezoelectric element having a piezoelectric vibrator. The first functional element is a piezoelectric element having a piezoelectric vibrator,
The device according to claim 1, wherein the second functional element is a circuit element having an oscillation circuit.   An electronic apparatus comprising the device according to any one of claims 1 to 10.

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