JP2009076870A5 - - Google Patents
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- Publication number
- JP2009076870A5 JP2009076870A5 JP2008192135A JP2008192135A JP2009076870A5 JP 2009076870 A5 JP2009076870 A5 JP 2009076870A5 JP 2008192135 A JP2008192135 A JP 2008192135A JP 2008192135 A JP2008192135 A JP 2008192135A JP 2009076870 A5 JP2009076870 A5 JP 2009076870A5
- Authority
- JP
- Japan
- Prior art keywords
- pedestal
- floor
- side wall
- strap
- reactor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 10
- 238000005086 pumping Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/828,568 US7988815B2 (en) | 2007-07-26 | 2007-07-26 | Plasma reactor with reduced electrical skew using electrical bypass elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009076870A JP2009076870A (ja) | 2009-04-09 |
| JP2009076870A5 true JP2009076870A5 (https=) | 2011-09-08 |
Family
ID=40294221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008192135A Withdrawn JP2009076870A (ja) | 2007-07-26 | 2008-07-25 | 電気的バイパス要素を用いて電気的スキューの低減したプラズマリアクタ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7988815B2 (https=) |
| JP (1) | JP2009076870A (https=) |
| KR (1) | KR100984776B1 (https=) |
| CN (1) | CN101355004B (https=) |
| SG (1) | SG149790A1 (https=) |
| TW (1) | TWI358738B (https=) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG10201703432XA (en) | 2007-04-27 | 2017-06-29 | Applied Materials Inc | Annular baffle |
| JP5490435B2 (ja) * | 2009-03-31 | 2014-05-14 | 東京エレクトロン株式会社 | ゲートバルブ装置 |
| US8360003B2 (en) * | 2009-07-13 | 2013-01-29 | Applied Materials, Inc. | Plasma reactor with uniform process rate distribution by improved RF ground return path |
| US8578879B2 (en) * | 2009-07-29 | 2013-11-12 | Applied Materials, Inc. | Apparatus for VHF impedance match tuning |
| KR102285582B1 (ko) * | 2009-08-31 | 2021-08-03 | 램 리써치 코포레이션 | 무선 주파수 (ｒｆ) 접지 복귀 장치들 |
| KR200476124Y1 (ko) * | 2009-09-29 | 2015-01-30 | 어플라이드 머티어리얼스, 인코포레이티드 | Ｒｆ전력공급 샤워헤드를 위한 편심 접지 복귀 |
| US9443753B2 (en) * | 2010-07-30 | 2016-09-13 | Applied Materials, Inc. | Apparatus for controlling the flow of a gas in a process chamber |
| US8920597B2 (en) | 2010-08-20 | 2014-12-30 | Applied Materials, Inc. | Symmetric VHF source for a plasma reactor |
| CN107452592B (zh) | 2011-05-31 | 2019-11-12 | 应用材料公司 | 边缘保护板、边缘保护组件以及用于处理基板的设备 |
| KR101297264B1 (ko) * | 2011-08-31 | 2013-08-16 | (주)젠 | 이중 유도 결합 플라즈마 소스를 갖는 플라즈마 반응기 |
| US9666414B2 (en) * | 2011-10-27 | 2017-05-30 | Applied Materials, Inc. | Process chamber for etching low k and other dielectric films |
| US8911588B2 (en) * | 2012-03-19 | 2014-12-16 | Lam Research Corporation | Methods and apparatus for selectively modifying RF current paths in a plasma processing system |
| US9230779B2 (en) * | 2012-03-19 | 2016-01-05 | Lam Research Corporation | Methods and apparatus for correcting for non-uniformity in a plasma processing system |
| TW201405627A (zh) * | 2012-07-20 | 2014-02-01 | Applied Materials Inc | 具有同軸ｒｆ饋送及同軸遮罩之對稱的感應性耦合電漿源 |
| US10103018B2 (en) * | 2012-07-31 | 2018-10-16 | Semes Co., Ltd. | Apparatus for treating substrate |
| CN103323981A (zh) * | 2013-05-24 | 2013-09-25 | 北京京东方光电科技有限公司 | 一种显示面板及其制造方法、显示装置 |
| US9412563B2 (en) * | 2013-09-13 | 2016-08-09 | Applied Materials, Inc. | Spatially discrete multi-loop RF-driven plasma source having plural independent zones |
| US20150075717A1 (en) * | 2013-09-13 | 2015-03-19 | Applied Materials, Inc. | Inductively coupled spatially discrete multi-loop rf-driven plasma source |
| JP2015162266A (ja) * | 2014-02-26 | 2015-09-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| KR101792941B1 (ko) * | 2015-04-30 | 2017-11-02 | 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드, 상하이 | 화학기상증착장치 및 그 세정방법 |
| US11469085B2 (en) * | 2016-12-27 | 2022-10-11 | Evatec Ag | Vacuum plasma workpiece treatment apparatus |
| JP2019009185A (ja) * | 2017-06-21 | 2019-01-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| TWI677895B (zh) * | 2017-10-30 | 2019-11-21 | 台灣積體電路製造股份有限公司 | 電漿設備及電漿設備監測方法 |
| CN109727837B (zh) * | 2017-10-30 | 2021-11-23 | 台湾积体电路制造股份有限公司 | 等离子体设备及等离子体设备监测方法 |
| CN112955997B (zh) * | 2018-11-21 | 2024-04-05 | 应用材料公司 | 用于使用相位控制来调整等离子体分布的设备及方法 |
| US20210066051A1 (en) * | 2019-08-28 | 2021-03-04 | Applied Materials, Inc. | High conductance lower shield for process chamber |
| USD931241S1 (en) | 2019-08-28 | 2021-09-21 | Applied Materials, Inc. | Lower shield for a substrate processing chamber |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5215619A (en) * | 1986-12-19 | 1993-06-01 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
| US5210466A (en) * | 1989-10-03 | 1993-05-11 | Applied Materials, Inc. | VHF/UHF reactor system |
| US5891350A (en) * | 1994-12-15 | 1999-04-06 | Applied Materials, Inc. | Adjusting DC bias voltage in plasma chambers |
| US6178919B1 (en) * | 1998-12-28 | 2001-01-30 | Lam Research Corporation | Perforated plasma confinement ring in plasma reactors |
| JP2001077088A (ja) * | 1999-09-02 | 2001-03-23 | Tokyo Electron Ltd | プラズマ処理装置 |
| US6296747B1 (en) | 2000-06-22 | 2001-10-02 | Applied Materials, Inc. | Baffled perforated shield in a plasma sputtering reactor |
| JP2002270598A (ja) | 2001-03-13 | 2002-09-20 | Tokyo Electron Ltd | プラズマ処理装置 |
| US6652713B2 (en) * | 2001-08-09 | 2003-11-25 | Applied Materials, Inc. | Pedestal with integral shield |
| US8381677B2 (en) * | 2006-12-20 | 2013-02-26 | Applied Materials, Inc. | Prevention of film deposition on PECVD process chamber wall |
| US7972470B2 (en) * | 2007-05-03 | 2011-07-05 | Applied Materials, Inc. | Asymmetric grounding of rectangular susceptor |
-
2007
- 2007-07-26 US US11/828,568 patent/US7988815B2/en not_active Expired - Fee Related
-
2008
- 2008-07-25 JP JP2008192135A patent/JP2009076870A/ja not_active Withdrawn
- 2008-07-25 TW TW097128457A patent/TWI358738B/zh not_active IP Right Cessation
- 2008-07-25 KR KR1020080073039A patent/KR100984776B1/ko not_active Expired - Fee Related
- 2008-07-28 SG SG200805595-6A patent/SG149790A1/en unknown
- 2008-07-28 CN CN2008101346270A patent/CN101355004B/zh not_active Expired - Fee Related
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