JP2009075044A - Film thickness defective inspection device for conductive polymer layer of organic el panel substrate, and method for inspecting film thickness defective using the same - Google Patents

Film thickness defective inspection device for conductive polymer layer of organic el panel substrate, and method for inspecting film thickness defective using the same Download PDF

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JP2009075044A
JP2009075044A JP2007246813A JP2007246813A JP2009075044A JP 2009075044 A JP2009075044 A JP 2009075044A JP 2007246813 A JP2007246813 A JP 2007246813A JP 2007246813 A JP2007246813 A JP 2007246813A JP 2009075044 A JP2009075044 A JP 2009075044A
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film thickness
conductive polymer
polymer layer
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Hideki Nakakuki
秀樹 中久木
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Toppan Inc
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Toppan Printing Co Ltd
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<P>PROBLEM TO BE SOLVED: To provide a film thickness defective inspection device for a conductive polymer layer of an organic EL panel substrate capable of efficiently inspecting a conductive polymer layer after the conductive polymer layer is formed, and a method for inspecting a film thickness defect using the same. <P>SOLUTION: This film thickness inspection device 100 for a conductive polymer layer of an organic EL panel substrate comprises a spectral reflection factor measuring means 10 for measuring beforehand a spectral reflection factor at least three levels of film thickness in an estimated range of film thickness of the conductive polymer layer, an image capturing means 20 having a band pass filter 22 capable of transmitting a waveform mostly inducing a difference in a reflection factor in accordance with a result obtained by the spectral reflection factor measuring means 10, an A/D conversion means 30 for converting captured analogue image data to digital image data, an image processing means 40 for processing the digital image data, a film thickness defect judgment processing means 50 for processing judgment of normality or fault of the film thickness, and a control means 60 for controlling each of the above means. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、導電性ポリマー層が形成された有機ELパネル基板の導電性ポリマー層の膜厚不良検査装置及び膜厚不良検査方法に関する。   The present invention relates to a film thickness defect inspection apparatus and a film thickness defect inspection method for a conductive polymer layer of an organic EL panel substrate on which a conductive polymer layer is formed.

有機ELパネルでは正孔輸送層、発光層の膜厚バラツキが発光ムラの大きな要因となる。発光層は励起光を当てることで蛍光するのでその明るさを観察することで膜厚異常のセルを特定可能であるが、正孔輸送層は非発光材料であるのでこのような方法は使えない。セル毎に膜厚測定装置で測定しなければならず、時間がかかるため、パネルの一部しか測定はできない。そのため、最終的にパネルが完成して発光させてみないと導電性ポリマー層の膜厚不良が分からないという問題がある。
このようなことから、簡単な装置と構成で、カラーフィルタの膜厚差を検出する検出装置と膜厚差検出方法が提案されている(例えば、特許文献1参照)。
特開2006−184125号公報
In the organic EL panel, variation in the film thickness of the hole transport layer and the light emitting layer is a major factor in uneven light emission. Since the light-emitting layer fluoresces when irradiated with excitation light, cells with abnormal film thickness can be identified by observing the brightness, but such a method cannot be used because the hole transport layer is a non-light-emitting material. . Since each cell must be measured with a film thickness measuring device and takes time, only a part of the panel can be measured. Therefore, there is a problem that the defective film thickness of the conductive polymer layer cannot be known unless the panel is finally completed and light is emitted.
For this reason, a detection apparatus and a film thickness difference detection method for detecting a film thickness difference between color filters with a simple apparatus and configuration have been proposed (see, for example, Patent Document 1).
JP 2006-184125 A

本発明は、上記問題点に鑑み考案されたもので、陽極、正孔輸送層、発光層・電子輸送層、陰極の順で構成された有機ELパネルにおいて、陽極にITO膜を、正孔輸送層にPEDOT等の導電性ポリマー層を用いた場合に、導電性ポリマー層形成後に導電性ポリマー層の膜厚不良を効率よく検査できるようにした有機ELパネル基板の導電性ポリマー層の膜厚不良検査装置及びそれを用いた膜厚不良検査方法を提供することを目的とする。   The present invention has been devised in view of the above problems. In an organic EL panel composed of an anode, a hole transport layer, a light emitting layer / electron transport layer, and a cathode in this order, an ITO film is transported to the anode, and the hole transport is performed. When a conductive polymer layer such as PEDOT is used for the layer, the film thickness defect of the conductive polymer layer of the organic EL panel substrate is made possible to efficiently inspect the film thickness defect of the conductive polymer layer after the formation of the conductive polymer layer. An object of the present invention is to provide an inspection apparatus and a film thickness defect inspection method using the inspection apparatus.

本発明に於いて上記課題を達成するために、まず請求項1においては、少なくとも使用する導電性ポリマー材料の光学定数と製造工程で想定される導電性ポリマー層の膜厚範囲から最低3水準の膜厚での分光反射率を予め測定する分光反射率測定手段10と、該分光反射率測定定手段10により得られた結果から最も反射率に差が生じる波長を透過するバンドパスフィルタ22を備えた撮像手段20と、撮像したアナログデータ画像をデジタルデータ画像に変換するA/D変換手段30と、デジタルデータ画像を処理する画像処理手段40と、膜厚の正常、不良を判断処理する膜厚不良判断処理手段50と、各手段の制御を司る制御手段60と、を備えていることを特徴とする有機ELパネル基板の導電性ポリマー層の膜厚不良検査装置としたものである。   In order to achieve the above object in the present invention, first, in claim 1, at least three levels from the optical constant of the conductive polymer material to be used and the film thickness range of the conductive polymer layer assumed in the manufacturing process. Spectral reflectance measuring means 10 for measuring spectral reflectance at the film thickness in advance, and bandpass filter 22 that transmits a wavelength that most causes a difference in reflectance from the result obtained by the spectral reflectance measuring / fixing means 10 are provided. Imaging means 20, A / D conversion means 30 for converting the captured analog data image into a digital data image, image processing means 40 for processing the digital data image, and film thickness for determining whether the film thickness is normal or defective An apparatus for inspecting a film thickness defect of a conductive polymer layer of an organic EL panel substrate, comprising: a defect judgment processing means 50; and a control means 60 for controlling each means. It is intended.

また、請求項2においては、陽極、正孔輸送層、発光層・電子輸送層、陰極の順で構成された有機EL(エレクトロルミネッセンス)ディスプレイパネルにおいて、陽極にITO(酸化インジウム錫)膜を、正孔輸送層に導電性ポリマー層を用いた場合に、前記導電性ポリマー層形成後に行う導電性ポリマー層の膜厚不良検査方法であって、使用する導電性ポリマー材料の光学定数と製造工程で想定される導電性ポリマー層の膜厚範囲から最低3水準の膜厚での分光反射率を予め計算で求めておき、得られた結果から最も反射率に差が生じる波長を選択し、その波長を透過するバンドパスフィルタを装着して撮像することで膜厚の差をコントラスト良く撮像し、膜厚異常のセルを検出することを特徴とする有機ELパネル基板の導電性ポリマー層の膜厚不良検査方法としたものである。   Moreover, in Claim 2, in the organic EL (electroluminescence) display panel comprised in order of the anode, the hole transport layer, the light emitting layer / electron transport layer, and the cathode, an ITO (indium tin oxide) film is formed on the anode. In the case of using a conductive polymer layer for the hole transport layer, a method for inspecting the film thickness defect of the conductive polymer layer performed after the formation of the conductive polymer layer, the optical constant of the conductive polymer material used and the manufacturing process Spectral reflectance at the minimum three levels of film thickness is calculated in advance from the assumed film thickness range of the conductive polymer layer, and the wavelength with the greatest difference in reflectance is selected from the obtained results. A conductive polymer for an organic EL panel substrate, characterized in that a difference in film thickness is imaged with a good contrast by mounting a bandpass filter that transmits light, and a cell having an abnormal film thickness is detected. It is obtained by the film thickness defect inspection method of the layers.

さらにまた、請求項3においては、前記導電性ポリマー層は、PEDOTであることを
特徴とする請求項2に記載の導電性ポリマー層の膜厚不良検査方法としたものである。
Furthermore, in Claim 3, the said conductive polymer layer is PEDOT, It is set as the film thickness defect inspection method of the conductive polymer layer of Claim 2 characterized by the above-mentioned.

本発明によれば、有機ELパネルの製造において、従来困難であった導電性ポリマー層形成後の導電性ポリマー層の膜厚不良検査を効率よく行うことが可能となり、パネル化して駆動するまで分からなかった導電性ポリマー層の膜厚不良を早期に発見でき、有機ELパネルの不良品を削減することができる。   According to the present invention, in manufacturing an organic EL panel, it is possible to efficiently perform a film thickness defect inspection of a conductive polymer layer after forming a conductive polymer layer, which has been difficult in the past. The film thickness defect of the conductive polymer layer that did not exist can be found at an early stage, and defective organic EL panels can be reduced.

以下、本発明の実施の形態につき説明する。
図1は、本発明の有機ELパネル基板の導電性ポリマー層の膜厚不良検査装置の一実施例を示す模式構成図である。
本発明の有機ELパネル基板の導電性ポリマー層の膜厚不良検査装置100は、導電性ポリマー材料の光学定数と製造工程で想定される導電性ポリマー層の膜厚範囲から最低3水準の膜厚での分光反射率を予め測定する分光反射率測定手段10と、該分光反射率測定定手段10により得られた結果から最も反射率に差が生じる波長を透過するバンドパスフィルタ22を備えた撮像手段20と、撮像したアナログデータ画像をデジタルデータ画像に変換するA/D変換手段30と、デジタルデータ画像を処理する画像処理手段40と、膜厚の正常、不良を判断処理する膜厚不良判断処理手段50と、各手段の制御を司る制御手段60と、から構成されている。
Hereinafter, embodiments of the present invention will be described.
FIG. 1 is a schematic configuration diagram showing an example of a film thickness defect inspection apparatus for a conductive polymer layer of an organic EL panel substrate of the present invention.
The film thickness defect inspection apparatus 100 for the conductive polymer layer of the organic EL panel substrate of the present invention has a film thickness of at least three levels from the optical constant of the conductive polymer material and the film thickness range of the conductive polymer layer assumed in the manufacturing process. An imaging device including a spectral reflectance measuring unit 10 that measures spectral reflectance in advance in advance, and a bandpass filter 22 that transmits a wavelength that causes the difference in reflectance most from the result obtained by the spectral reflectance measuring / fixing unit 10 Means 20, A / D conversion means 30 for converting the captured analog data image into a digital data image, image processing means 40 for processing the digital data image, and film thickness defect determination for determining whether the film thickness is normal or defective It comprises a processing means 50 and a control means 60 that controls each means.

分光反射率測定手段10では、使用する導電性ポリマー材料の光学定数と製造工程で想定される導電性ポリマー層の膜厚範囲から最低3水準の膜厚での分光反射率を分光光度計で予め測定しておき、撮像手段20で導電性ポリマー層の膜厚差を撮像する際のバンドパスフィルタの選定に利用する。   In the spectral reflectance measuring means 10, the spectrophotometer preliminarily calculates the spectral reflectance at a film thickness of at least three levels from the optical constant of the conductive polymer material to be used and the film thickness range of the conductive polymer layer assumed in the manufacturing process. It is measured and used to select a bandpass filter when the imaging means 20 images the film thickness difference of the conductive polymer layer.

撮像手段20では、被検査対象物である有機ELパネル基板71を基板搬送ステージ61にセットする。ライン照明23からの照明光はバンドパスフィルタ22を透過し、導電性ポリマー層の膜厚差をコントラスト良く撮像可能な波長域だけの光を透過すると、ビームスプリッタ24で90度向きを変え、有機ELパネル基板71に垂直入射する。
垂直入射した光は導電性ポリマー層表面での反射と導電性ポリマー層を透過し、ITO膜面との界面で反射し戻ってくる光との間で干渉が生じ、導電性ポリマー層の膜厚に応じた波長で反射の強弱が生じる。これをラインカメラに代表される電子光学的な検出手段21で撮像する。
In the imaging means 20, an organic EL panel substrate 71 that is an object to be inspected is set on the substrate transport stage 61. Illumination light from the line illumination 23 passes through the band-pass filter 22, and transmits light in a wavelength region that allows imaging of the film thickness difference of the conductive polymer layer with good contrast. The light vertically enters the EL panel substrate 71.
The normal incident light is reflected on the surface of the conductive polymer layer and transmitted through the conductive polymer layer, causing interference between the light reflected at the interface with the ITO film surface and returning, and the film thickness of the conductive polymer layer. The intensity of reflection is generated at a wavelength corresponding to. This is imaged by an electro-optical detection means 21 typified by a line camera.

A/D変換手段30では、撮像手段20で得られたアナログ画像をデジタル画像信号に変換する。
画像処理手段40では、A/D変換した二次元のデジタル画像を二次元の走査領域に亘って処理し、画像メモリに格納する。
The A / D conversion means 30 converts the analog image obtained by the imaging means 20 into a digital image signal.
The image processing means 40 processes the A / D converted two-dimensional digital image over a two-dimensional scanning area and stores it in the image memory.

膜厚不良判断処理手段50では、画像メモリに格納された画像から、膜厚不良を抽出するプログラムを実行し、導電性ポリマー層の膜厚の正常、不良を判断処理する。もちろんコンピュータプログラム以外にハードウエア回路により欠陥検出処理を行うことも可能である。   The film thickness defect determination processing means 50 executes a program for extracting film thickness defects from the image stored in the image memory, and determines whether the film thickness of the conductive polymer layer is normal or defective. Of course, defect detection processing can also be performed by a hardware circuit other than the computer program.

取り込んだ画像の処理手順は以下のようになる。画像をX方向及びY方向にプロジェクション処理して1次元データにする。1次元データを走査することでセルの位置が認識できるので予め決めておいた矩形サイズで各セルを囲み、予め設定した閾値で2値化した後、矩形内の黒画素数を集計する。この値が予め決めた正常範囲から逸脱しているセルを導電性ポリマー層の膜厚不良と判定する。   The processing procedure for the captured image is as follows. The image is projected in the X and Y directions to become one-dimensional data. Since the position of the cell can be recognized by scanning the one-dimensional data, each cell is surrounded by a predetermined rectangular size, binarized by a preset threshold value, and then the number of black pixels in the rectangle is totalized. A cell in which this value deviates from a predetermined normal range is determined as a film thickness defect of the conductive polymer layer.

制御手段60では、各手段への指示、制御を行うと同時に、有機ELパネル基板の導電性ポリマー層の膜厚不良検査装置全体の制御を行う。   The control means 60 controls and controls the entire film defect inspection apparatus for the conductive polymer layer of the organic EL panel substrate at the same time as instructing and controlling each means.

以下本発明の有機ELパネル基板の導電性ポリマー層の膜厚不良検査装置を用いた導電性ポリマー層の膜厚不良検査方法について説明する。
まず、有機ELパネルの層構成を図2で説明する。ガラス基板111にITO(酸化インジウム錫)膜121があり、各画素の隔壁131が形成された状態で導電性ポリマー層からなる正孔輸送層141が形成される。この後の工程でR、G、B発光層151、161、171と陰極層181が形成され、封止されて有機ELパネルが完成する。
ここで、導電性ポリマー層は、PEDOTから構成されている。
本発明ではで導電性ポリマー層からなる正孔輸送層141が形成された有機ELパネル基板(図3参照)の状態で導電性ポリマー層141の膜厚異常を検査する。
Hereinafter, a method for inspecting a film thickness defect of a conductive polymer layer using a film thickness defect inspection apparatus for a conductive polymer layer of an organic EL panel substrate of the present invention will be described.
First, the layer structure of the organic EL panel will be described with reference to FIG. A glass substrate 111 has an ITO (indium tin oxide) film 121, and a hole transport layer 141 made of a conductive polymer layer is formed in a state where the partition wall 131 of each pixel is formed. In the subsequent steps, R, G, B light emitting layers 151, 161, 171 and a cathode layer 181 are formed and sealed to complete an organic EL panel.
Here, the conductive polymer layer is made of PEDOT.
In the present invention, the film thickness abnormality of the conductive polymer layer 141 is inspected in the state of the organic EL panel substrate (see FIG. 3) on which the hole transport layer 141 made of the conductive polymer layer is formed.

PEDOTからなる導電性ポリマー層の光学定数を図4(a)に、ITO膜の光学定数を図4(b)にそれぞれ示す。多層膜であっても光学定数と膜厚が与えられると分光反射率が計算できる。
この数値を使ってガラス基板上でITO膜の膜厚150nmとして、PEDOTからなる導電性ポリマー層の膜厚を40nm、50nm、60nmと変えたときの垂直入射分光反射率を計算させた結果を図5に示す。
グラフからわかるように短波長側で膜厚差による反射率差が大きくなっている。従って、この波長域を透過し、他の波長域をカットするバンドパスフィルタを使用してパネルの撮像を行えば標準膜厚である50nmに対して薄ければ明るく、厚ければ暗く撮像される。バンドパスフィルタを使用しない場合に比べてよりコントラスト良く撮像出来る。
The optical constant of the conductive polymer layer made of PEDOT is shown in FIG. 4 (a), and the optical constant of the ITO film is shown in FIG. 4 (b). Even in the case of a multilayer film, the spectral reflectance can be calculated if the optical constant and the film thickness are given.
Using this numerical value, the normal incidence spectral reflectance is calculated when the film thickness of the ITO polymer film is 150 nm on the glass substrate and the film thickness of the conductive polymer layer made of PEDOT is changed to 40 nm, 50 nm, and 60 nm. 5 shows.
As can be seen from the graph, the reflectance difference due to the film thickness difference is large on the short wavelength side. Therefore, if the panel is imaged using a bandpass filter that transmits this wavelength range and cuts other wavelength ranges, the image is brighter if it is thinner than the standard film thickness of 50 nm, and darker if it is thicker. . Images can be captured with better contrast than when no bandpass filter is used.

上記バンドパスフィルタの波長域を決定する膜厚の3水準は、理想膜厚及び実際の製造工程における膜厚の上限値、下限値から設定することができる。この範囲において、最も反射率差が大きな波長域を選択することによって、効率的に導電性ポリマー層の膜厚変化を検査することが可能となる。   The three levels of film thickness that determine the wavelength range of the bandpass filter can be set from the ideal film thickness and the upper and lower limits of the film thickness in the actual manufacturing process. In this range, it is possible to efficiently inspect the change in film thickness of the conductive polymer layer by selecting a wavelength region having the largest reflectance difference.

また、図6には隔壁131と隔壁131の間にPEDOTからなる導電性ポリマー層141を形成した後、触針式段差計で測定した結果をプロットした図を示す。ここで、発光に寄与するのは隔壁間の中央付近のフラットな部分で隔壁131近くの膜厚が厚くなっている部分は発光に寄与しない。従って、膜厚異常を判断する際に、中央部のフラットな部分の面積が重要ということになる。中央部のフラットな部分の面積が異なる例を断面図と上面図で図7に示す。セル51に比べてセル52の方が中央部のフラットな部分が大きい。そこで、撮像した画像を2値化し、セル毎にその面積を算出し、正常部の面積と比較することで膜厚異常起因の発光ムラと相関の高い結果が得られる。   FIG. 6 shows a plot of the results measured with a stylus profilometer after the conductive polymer layer 141 made of PEDOT is formed between the partition walls 131 and 131. Here, the flat portion near the center between the partition walls contributes to the light emission, and the portion where the film thickness near the partition wall 131 is thick does not contribute to the light emission. Therefore, when determining the film thickness abnormality, the area of the flat portion at the center is important. An example in which the area of the flat portion at the center is different is shown in FIG. 7 as a cross-sectional view and a top view. Compared with the cell 51, the cell 52 has a larger flat portion at the center. Therefore, the captured image is binarized, the area of each cell is calculated, and compared with the area of the normal part, a result highly correlated with the light emission unevenness due to the film thickness abnormality can be obtained.

本発明によれば、有機ELパネルの製造において、従来困難であった導電性ポリマー層形成後の導電性ポリマー層の膜厚不良検査を効率よく行うことが可能となり、パネル化して駆動するまで分からなかった導電性ポリマー層の膜厚不良を早期に発見でき、有機ELパネルの不良品を削減することができる。   According to the present invention, in manufacturing an organic EL panel, it is possible to efficiently perform a film thickness defect inspection of a conductive polymer layer after forming a conductive polymer layer, which has been difficult in the past. The film thickness defect of the conductive polymer layer that did not exist can be found at an early stage, and defective organic EL panels can be reduced.

本発明の有機ELパネル基板の導電性ポリマー層の膜厚不良検査装置の一実施例を示す模式構成図である。It is a schematic block diagram which shows one Example of the film thickness defect inspection apparatus of the conductive polymer layer of the organic electroluminescent panel board | substrate of this invention. 有機ELパネルの一例を示す模式構成断面図である。It is a schematic structure sectional view showing an example of an organic EL panel. 有機ELパネル基板の一例を示す模式構成断面図である。It is a schematic cross section showing an example of an organic EL panel substrate. (a)は、導電性ポリマー層の光学定数の一例を示す説明図である。(b)は、ITO(酸化インジウム錫)膜の光学定数の一例を示す説明図である。(A) is explanatory drawing which shows an example of the optical constant of a conductive polymer layer. (B) is explanatory drawing which shows an example of the optical constant of an ITO (indium tin oxide) film | membrane. 導電性ポリマー層の膜厚を40nm、50nm、60nmと変えたときの垂直入射分光反射率曲線の一例を示す。An example of a normal incidence spectral reflectance curve when the film thickness of the conductive polymer layer is changed to 40 nm, 50 nm, and 60 nm is shown. 隔壁131と隔壁131の間にPEDOTからなる導電性ポリマー層を形成した後、触針式段差計で測定した結果の一例を示す。An example of a result obtained by forming a conductive polymer layer made of PEDOT between the partition wall 131 and the partition wall 131 and then measuring with a stylus profilometer is shown. (a)は、隔壁131と隔壁131の間に形成されたPEDOTからなる導電性ポリマー層が不良と判断されたセル51の模式断面図と模式上面図である。(b)は、隔壁131と隔壁131の間に形成されたPEDOTからなる導電性ポリマー層が正常と判断されたセル52の模式断面図と模式上面図である。(A) is a schematic cross-sectional view and a schematic top view of the cell 51 in which the conductive polymer layer made of PEDOT formed between the partition walls 131 is determined to be defective. (B) is a schematic cross-sectional view and a schematic top view of the cell 52 in which the conductive polymer layer made of PEDOT formed between the partition walls 131 is determined to be normal.

符号の説明Explanation of symbols

10……分光反射率測定手段
20……撮像手段
21……電子光学的な検出手段
22……バンドパスフィルタ
23……ライン照明
24……ビームスプリッタ
30……A/D変換手段
40……画像処理手段
50……膜厚不良判断処理手段
51、52……セル
60……制御手段
61……ステージ
71……有機ELパネル基板
100……膜厚不良検査装置
111……ガラス基板
121……ITO(酸化インジウム錫)膜
131……隔壁
141……導電性ポリマー層
151……R発光層
161……G発光層
171……B発光層
181……陰極層
DESCRIPTION OF SYMBOLS 10 ... Spectral reflectance measuring means 20 ... Imaging means 21 ... Electro-optical detection means 22 ... Band pass filter 23 ... Line illumination 24 ... Beam splitter 30 ... A / D conversion means 40 ... Image Processing means 50 ... Film thickness defect judgment processing means 51, 52 ... Cell 60 ... Control means 61 ... Stage 71 ... Organic EL panel substrate 100 ... Film thickness defect inspection device 111 ... Glass substrate 121 ... ITO (Indium tin oxide) film 131 ... partition wall 141 ... conductive polymer layer 151 ... R light emitting layer 161 ... G light emitting layer 171 ... B light emitting layer 181 ... cathode layer

Claims (3)

少なくとも使用する導電性ポリマー材料の光学定数と製造工程で想定される導電性ポリマー層の膜厚範囲から最低3水準の膜厚での分光反射率を予め測定する分光反射率測定手段(10)と、該分光反射率測定定手段(10)により得られた結果から最も反射率に差が生じる波長を透過するバンドパスフィルタ(22)を備えた撮像手段(20)と、撮像したアナログデータ画像をデジタルデータ画像に変換するA/D変換手段(30)と、デジタルデータ画像を処理する画像処理手段(40)と、膜厚の正常、不良を判断処理する膜厚不良判断処理手段(50)と、各手段の制御を司る制御手段(60)と、を備えていることを特徴とする有機ELパネル基板の導電性ポリマー層の膜厚不良検査装置。   Spectral reflectance measurement means (10) for measuring in advance at least three levels of spectral reflectance from the optical constant of the conductive polymer material to be used and the film thickness range of the conductive polymer layer assumed in the manufacturing process; An imaging means (20) having a band-pass filter (22) that transmits a wavelength at which the difference in reflectance is the most from the result obtained by the spectral reflectance measurement and determination means (10), and an analog data image taken A / D conversion means (30) for converting into a digital data image, image processing means (40) for processing the digital data image, and film thickness defect judgment processing means (50) for judging whether the film thickness is normal or defective And a control means (60) for controlling each means, and a film thickness defect inspection apparatus for a conductive polymer layer of an organic EL panel substrate. 陽極、正孔輸送層、発光層・電子輸送層、陰極の順で構成された有機EL(エレクトロルミネッセンス)ディスプレイパネルにおいて、陽極にITO(酸化インジウム錫)膜を、正孔輸送層に導電性ポリマー層を用いた場合に、前記導電性ポリマー層形成後に行う導電性ポリマー層の膜厚不良検査方法であって、使用する導電性ポリマー材料の光学定数と製造工程で想定される導電性ポリマー層の膜厚範囲から最低3水準の膜厚での分光反射率を予め計算で求めておき、得られた結果から最も反射率に差が生じる波長を選択し、その波長を透過するバンドパスフィルタを装着して撮像することで膜厚の差をコントラスト良く撮像し、膜厚異常のセルを検出することを特徴とする有機ELパネル基板の導電性ポリマー層の膜厚不良検査方法。   In an organic EL (electroluminescence) display panel composed of an anode, hole transport layer, light emitting layer / electron transport layer, and cathode in this order, an ITO (indium tin oxide) film is used as the anode, and a conductive polymer is used as the hole transport layer. When a layer is used, this is a method for inspecting defective film thickness of a conductive polymer layer performed after the formation of the conductive polymer layer, and includes an optical constant of a conductive polymer material to be used and a conductive polymer layer assumed in a manufacturing process. Spectral reflectance at the minimum three levels of film thickness is calculated in advance from the film thickness range, and the wavelength with the greatest difference in reflectance is selected from the obtained results, and a bandpass filter that transmits that wavelength is installed. A method for inspecting a film thickness defect of a conductive polymer layer of an organic EL panel substrate, wherein a difference in film thickness is imaged with good contrast to detect a cell having an abnormal film thickness. 前記導電性ポリマー層は、PEDOTであることを特徴とする請求項2に記載の導電性ポリマー層の膜厚不良検査方法。   The method for inspecting film thickness defects of a conductive polymer layer according to claim 2, wherein the conductive polymer layer is PEDOT.
JP2007246813A 2007-09-25 2007-09-25 Film thickness defective inspection device for conductive polymer layer of organic el panel substrate, and method for inspecting film thickness defective using the same Withdrawn JP2009075044A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102494620A (en) * 2011-12-06 2012-06-13 成都中科唯实仪器有限责任公司 Full-automatic optical thickness gauge and refractive index/transmittance data processing method thereof
US8628982B2 (en) 2010-02-22 2014-01-14 Samsung Display Co., Ltd. Method of depositing and inspecting an organic light emitting display panel
JP2014508921A (en) * 2011-01-31 2014-04-10 ビアメトリクス ゲゼルシャフト ミット ベシュレンクテル ハフツング Method and apparatus for determining optical properties by simultaneously measuring intensities in thin film layers using light of multiple wavelengths

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8628982B2 (en) 2010-02-22 2014-01-14 Samsung Display Co., Ltd. Method of depositing and inspecting an organic light emitting display panel
JP2014508921A (en) * 2011-01-31 2014-04-10 ビアメトリクス ゲゼルシャフト ミット ベシュレンクテル ハフツング Method and apparatus for determining optical properties by simultaneously measuring intensities in thin film layers using light of multiple wavelengths
CN102494620A (en) * 2011-12-06 2012-06-13 成都中科唯实仪器有限责任公司 Full-automatic optical thickness gauge and refractive index/transmittance data processing method thereof

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